CN106950478A - A kind of GIS device internal connection overheating fault simulation test device and method - Google Patents
A kind of GIS device internal connection overheating fault simulation test device and method Download PDFInfo
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- CN106950478A CN106950478A CN201710278829.1A CN201710278829A CN106950478A CN 106950478 A CN106950478 A CN 106950478A CN 201710278829 A CN201710278829 A CN 201710278829A CN 106950478 A CN106950478 A CN 106950478A
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- 238000004088 simulation Methods 0.000 title claims abstract description 120
- 238000013021 overheating Methods 0.000 title claims abstract description 65
- 238000012360 testing method Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 112
- 238000002474 experimental method Methods 0.000 claims description 17
- 229910018503 SF6 Inorganic materials 0.000 claims description 11
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 11
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000005457 optimization Methods 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical group [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 238000001931 thermography Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- -1 phenolic aldehyde Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000001757 thermogravimetry curve Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/022—Means for indicating or recording specially adapted for thermometers for recording
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Abstract
The invention discloses a kind of GIS device internal connection overheating fault simulation test device and method, it is related to technical field of electric equipment, solve and need in the prior art in the event of a loss of power, whether occur joint overheating fault to GIS device inside to be estimated, cause also run using the part of the GIS device in power system, the operational efficiency of power system is reduced, is unfavorable for the technical problem of the economical operation of power system.The GIS device internal connection overheating fault simulation test device includes：GIS device body, GIS device body includes the fault simulation section being sequentially connected and normal analog section, and the corresponding failure conductor of fault simulation section is overheated in galvanization, and the corresponding normal conductor of normal analog section is connected by joint with the failure conductor；The outer surface of the housing of the outer surface of failure conductor, the outer surface of normal conductor and GIS device is provided with temperature sensor.The present invention is applied to simulated test GIS device internal connection overheating fault.
Description
Technical field
The present invention relates to technical field of electric equipment, more particularly to a kind of simulation examination of GIS device internal connection overheating fault
Experiment device and method.
Background technology
Cubicle Gas-Insulated Switchgear is (referred to as：GIS device, Gas Instulated Switchgear) be with
Sulfur hexafluoride (SF6) gas is as the fully closed combined electric unit equipment of dielectric, and because it has, connecting-disconnecting function is strong, fault rate
The advantages of low, maintenance cost is few, floor space is small, therefore, obtains a wide range of applications in the transformer station of power system.
However, during Operation of Electric Systems, enclosed busbar, disconnecting switch inside GIS device, the first-class part of cable
The phenomenon of insulation ag(e)ing or loose contact occurs, this allow for inside GIS device by enclosed busbar, disconnecting switch, electricity
When the temperature of joint between the temperature and conductor of the conductor of the parts such as cable end connection occurs abnormal, so that GIS can be caused to set
Standby insulation ag(e)ing, even results in that GIS device housing is breakdown, and then triggers the major accident of Operation of Electric Systems, causes weight
Big economic loss.
At present, the surface color or periodic measurement of the joint between manual observation GIS device inner conductor are generally passed through
GIS device home loop resistance, differentiates come the hot stall to the joint between GIS device inner conductor.But, it is artificial to see
The surface color and periodic measurement GIS device home loop resistance for examining the joint between GIS device inner conductor are required for this
GIS device has a power failure, to be overhauled to GIS device, and this is resulted in power system and can not also transported using the part of the GIS device
OK, the operational efficiency of power system is reduced, is unfavorable for the economical operation of power system.
The content of the invention
It is an object of the invention to provide a kind of GIS device internal connection overheating fault simulation test device and method, use
It is simulated in GIS device internal connection overheating fault, with the case where not having a power failure, according to analog result to GIS device
Whether inside, which occurs joint overheating fault, is estimated, and improves the operational efficiency of the power system using the GIS device.
To reach above-mentioned purpose, the present invention provides a kind of GIS device internal connection overheating fault simulation test device, uses
Following technical scheme：
The GIS device internal connection overheating fault simulation test device includes：GIS device body, the GIS device body
Including the fault simulation section being sequentially connected and normal analog section, the corresponding failure conductor mistake in galvanization of fault simulation section
Heat, the corresponding normal conductor of the normal analog section is connected by joint with the failure conductor；
The outer surface of the housing of the outer surface of the failure conductor, the outer surface of the normal conductor and the GIS device
It is provided with temperature sensor.
Compared with prior art, the GIS device internal connection overheating fault simulation test device that provides of the present invention have with
Lower beneficial effect：
In the GIS device internal connection overheating fault simulation test device that the present invention is provided, GIS device body is not only wrapped
Fault simulation section is included, also including coupled normal analog section, the wherein corresponding failure conductor of fault simulation section is in galvanization
When overheat, and the normal corresponding normal conductor of analog section is to be connected by joint with failure conductor, and this allows for abnormal heating
Failure conductor heat can be transmitted to by heat transfer by the joint being in contact with it, cause joint to overheat, actually make so as to simulate
GIS device internal connection overheats and causes the situation of GIS device failure, and in the outer surface of failure conductor, normal conductor
Outer surface and the outer surface of housing of GIS device be provided with temperature sensor, this is allowed for logical to fault simulation section
After entering electric current, it is possible to obtain temperature value, the temperature value of the outer surface of normal conductor of the outer surface of failure conductor, and shell
The temperature value of external surface, so as to the temperature value of the outer surface according to failure conductor, the temperature value of the outer surface of normal conductor,
And the temperature value of housing outer surface, with reference to the loop resistance value of GIS device body, obtain the fault simulation of GIS device body
The comparing result of the running status of section and the running status of normal analog section so that among the practical application of GIS device, work
Personnel can judge whether GIS device the failure of internal connection overheat occurs according to the comparing result, in the case where not having a power failure
Whether occur joint overheating fault to GIS device inside to be estimated, it is ensured that use the safety of the power system of the GIS device
Operation, improves the operational efficiency of power system, is conducive to the economical operation of power system.
The embodiment of the present invention also provides a kind of GIS device internal connection overheating fault simulation experiment method, using following skill
Art scheme：
The GIS device internal connection overheating fault simulation experiment method uses above-mentioned GIS device internal connection overheating fault
Simulation test device is tested, and the GIS device internal connection overheating fault simulation experiment method includes：
Obtain the experiment front loop resistance value of GIS device body；
The input of the output end of strong current generator and fault simulation section is connected, by the output end of normal analog section with
The input of strong current generator is connected, and sets the output valve of the strong current generator；
By the strong current generator, electric current is passed through to fault simulation section；
By the temperature sensor for the outer surface for being arranged on failure conductor, the outer surface of the failure conductor is obtained and recorded
Temperature value；
By the temperature sensor for the outer surface for being arranged on normal conductor, the outer surface of the normal conductor is obtained and recorded
Temperature value；
By the temperature sensor of the outer surface of the housing that is arranged on GIS device body, the GIS device is obtained and recorded
The temperature value of the outer surface of the housing of body；
By predetermined test period, the strong current generator and fault simulation section and the normal mode are each turned off
Intend the connection of section；
Obtain loop resistance value after the experiment of the GIS device body；
According to the experiment front loop resistance value of the GIS device body, the temperature value of the outer surface of the failure conductor, institute
State the temperature value, the temperature value of the outer surface of the housing of the GIS device body, the GIS device of the outer surface of normal conductor
Analog section experiment after loop resistance value, obtain the running status of fault simulation section and the fortune of the normal analog section
Preliminary comparison's result of row state.
Compared with prior art, GIS device internal connection overheating fault simulation experiment method provided in an embodiment of the present invention
Beneficial effect it is identical with the beneficial effect of above-mentioned GIS device internal connection overheating fault simulation test device, therefore herein no longer
Repeated.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, embodiment will be described below
Needed for the accompanying drawing to be used be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also be attached according to these
Figure obtains other accompanying drawings.
Fig. 1 is the structural representation of GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
Figure；
Fig. 2 is failure conductor in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
With the connection diagram of normal conductor；
Fig. 3 is internal fixation plate in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
Structural representation；
Fig. 4 is failure conductor in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
With the position view of the point for measuring temperature set on the first normal conductor；
Fig. 5 is normal in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention first
The position view of the point for measuring temperature set on conductor and the second normal conductor；
Fig. 6 is fault simulation in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
Section is corresponding and the corresponding non-faulting phase conductor of the first normal analog section on the position view of point for measuring temperature that sets；
Fig. 7 is normal in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention first
Analog section is corresponding and the corresponding non-faulting phase conductor of the second normal analog section on the position view of point for measuring temperature that sets；
Fig. 8 is GIS device sheet in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
The position view of the point for measuring temperature set on the outer surface of the shell of body；
Fig. 9 is GIS device sheet in GIS device internal connection overheating fault simulation test device provided in an embodiment of the present invention
The position view of the point for measuring temperature set on the outer surface of the shell of body and the intrinsic internal fixation plate of GIS device；
Figure 10 is the flow chart of GIS device internal connection overheating fault simulation experiment method provided in an embodiment of the present invention.
Description of reference numerals：
1-fault simulation section, 2-normal analog section,
11-failure conductor, 21-normal conductor,
3-joint, 4-disc insulator,
111-our department, 112-through-flow portion,
5-internal fixation plate, the normal conductors of 21a-first,
The normal conductors of 21b-second.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is a part of embodiment of the invention, rather than whole embodiments.Based on this hair
Embodiment in bright, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
The embodiment of the present invention provides a kind of GIS device internal connection overheating fault simulation test device, such as Fig. 1 and Fig. 2 institutes
Show, the GIS device internal connection overheating fault simulation test device includes：GIS device body, GIS device body is included successively
Connected fault simulation section 1 and normal analog section 2, fault simulation 1 corresponding failure conductor 11 of section are overheated in galvanization, normally
The corresponding normal conductor 21 of analog section 2 is connected by joint 3 with failure conductor 11, and in the outer surface of failure conductor 11, just
The outer surface of normal conductor 21 and the outer surface of the housing of GIS device are provided with temperature sensor.Exemplarily, as shown in figure 1,
Above-mentioned fault simulation section 1 and normal analog section 2 can be separated by disc insulator 4.
In using above-mentioned GIS device internal connection overheating fault simulation test device process of the test, it can first obtain above-mentioned
The experiment front loop resistance value of GIS device, then by the input phase of the output end of strong current generator and fault simulation section 1
Even, after the output end of normal analog section 2 is connected with the input of strong current generator, by strong current generator, to event
Barrier analog section 1 is passed through electric current, then respectively by being arranged on the outer surface, the outer surface of normal conductor 21 and GIS of failure conductor 11
The temperature sensor of the outer surface of the housing of apparatus body, obtains and records the temperature value, normal of the outer surface of failure conductor 11
The temperature value of the outer surface of the temperature value of the outer surface of conductor 21 and the housing of GIS device body, is passing through predetermined test period
Afterwards, you can disconnect strong current generator and the connection of fault simulation section 1 and normal analog section 2, obtain the examination of GIS device body
Rear loop resistance value is tested, experiment front loop resistance value, the temperature of the outer surface of failure conductor 11 finally according to GIS device body
Value, the temperature value of the outer surface of normal conductor 21, the temperature value of the outer surface of the housing of GIS device body, GIS device body
Loop resistance value after experiment, you can obtain fault simulation section 1 running status and normal analog section 2 running status it is preliminary right
Compare result.
In the GIS device internal connection overheating fault simulation test device that the present embodiment is provided, GIS device body is not only
Including fault simulation section 1, also including coupled normal analog section 2, wherein 1 corresponding failure conductor 11 of fault simulation section exists
Overheated during galvanization, and the normal corresponding normal conductor 21 of analog section 2 is to be connected by joint with failure conductor 11, this just makes
Heat can be transmitted to by heat transfer the joint 3 being in contact with it by obtaining the failure conductor 11 of abnormal heating, cause joint 3 to overheat, from
And actually used GIS device internal connection overheat can be simulated and cause the situation of GIS device failure, and in failure conductor 11
The outer surface of the housing of outer surface, the outer surface of normal conductor 21 and GIS device is provided with temperature sensor, and this just makes
Obtain and be passed through to fault simulation section 1 after electric current, it is possible to obtain temperature value, the normal conductor 21 of the outer surface of failure conductor 11
Outer surface temperature value, and housing outer surface temperature value, so as to the temperature value of the outer surface according to failure conductor 11,
The temperature value of the outer surface of normal conductor 21, and housing outer surface temperature value, with reference to the loop resistance of GIS device body
Value, obtains the comparing result of the running status of the fault simulation section 1 of GIS device body and the running status of normal analog section 2, makes
Obtain among the practical application of GIS device, staff can judge whether GIS device inside occurs according to the comparing result
The failure of joint overheat, in the case where not having a power failure whether occurring joint overheating fault to GIS device inside is estimated, it is ensured that
Using the safe operation of the power system of the GIS device, the operational efficiency of power system is improved, be conducive to power system
Economical operation.
Exemplarily, above-mentioned normal analog section may include multiple normal simulation subsegments, wherein, two neighboring normal analog submodule
The corresponding normal conductor of section is connected by joint, by setting multiple normal simulation subsegments, can will be close to fault simulation section
Normal simulation subsegment is as transition analog section, so that avoiding the hot-spot of fault simulation section from intending section to normal mode produces influence,
And then avoid producing influence to the result of the test obtained using GIS device internal connection overheating fault simulation test device so that
The result of the test obtained using GIS device internal connection overheating fault simulation test device is more accurate.
Specifically, as shown in Fig. 2 through-flow section of area less than normal conductor 21 of the passage section of failure conductor 11 can be made
The area in face, so that the through-current capability of failure conductor 11 is not enough, causes hot-spot.
Optionally, as shown in Fig. 2 failure conductor 11 may include our department 111 and through-flow portion 112, our department 111 and through-flow portion
112 outer surface is provided with temperature sensor, and because the resistivity of iron is more than the resistivity of aluminium, therefore can be by through-flow portion
112 are set to the through-flow portion of irony, and our department 111 is set to aluminum our department, and normal conductor is set to aluminum normal conductor, so as to
The through-current capability in through-flow portion 112 is further reduced, hot-spot is caused.
In addition, as shown in figure 3, at least one internal fixation plate 5, internal fixation plate 5 can be provided with the housing of GIS device body
The housing of diameter and GIS device body match, internal fixation plate 5 offers what is passed through for failure conductor and/or normal conductor
Through hole, internal fixation plate is provided with temperature sensor, is set so as to obtain GIS using the upper temperature sensor installed in internal fixation plate
The temperature of the sulfur hexafluoride gas at any point in standby body, so as to the sulfur hexafluoride in the housing according to GIS device body
Running status preliminary comparison's result of the temperature value of gas, the running status of combination failure analog section and normal analog section, is obtained
The optimization comparing result of the running status of fault simulation section and the running status of normal analog section, to cause the reality in GIS device
Border application is central, and staff more accurately can judge whether GIS device inside occurs and connect according to the optimization comparing result
The failure of head overheat.
Exemplarily, because phenolic resin has certain mechanical strength, high temperature resistant (- 250~150 DEG C), and phenolic aldehyde
The thermal conductivity factor of resin is approached with sulfur hexafluoride gas, therefore, and preferred internal fixation plate is phenolic resin net in the embodiment of the present invention
Shape structure, is enable to reduce influence of the internal fixation plate to Temperature Distribution in the case of GIS hot-spots, it is ensured that GIS device
Internal connection overheating fault simulation test device and the uniformity of actual card GIS device.
In addition, by the way that fixed plate is set into the circulation that network structure also helps the sulfur hexafluoride gas in GIS device,
The situation of the sulfur hexafluoride gas hot-spot caused by internal fixation plate is avoided to occur, so as to further reduce internal fixation plate pair
The influence of Temperature Distribution in the case of GIS hot-spots, is further ensured that GIS device internal connection overheating fault simulation test device
With the uniformity of actual card GIS device.
Exemplarily, said temperature sensor can be platinum resistance temperature sensor or copper resistance temperature sensor, ability
Field technique personnel can select according to actual conditions, and the embodiment of the present invention is without limiting.
In addition, temperature rise tester of the said temperature sensor with the temperature signal for receiving temperature sensor collection
Connection, so that staff can directly read temperature value from temperature rise tester.
You need to add is that, above-mentioned GIS device internal connection overheating fault simulation test device may also include for testing
The infrared thermography of the temperature of the housing of GIS device body, so as to the GIS device sheet obtained according to the infrared thermography
The Infrared Thermogram of the housing of body, intuitively understands the Temperature Distribution value of the housing of GIS device body, in order to work on the whole
Make personnel setting test period, grasp macroscopical experiment progress etc..
Optionally, above-mentioned GIS device internal connection overheating fault simulation test device may also include for test environment temperature
The environment temperature sensor of degree, specifically, the environment temperature sensor may be disposed at is more than or equal to 2m apart from GIS device body
Position at, so as to avoid the environment temperature sensor from being influenceed by GIS device body, obtain accurate environment temperature
Value, with when obtaining running status preliminary comparison's result of the running status of fault simulation section and normal analog section, for work people
Member's reference, excludes the disturbing factor of environment temperature.
In addition, be better understood from and implement for the ease of those skilled in the art, below the embodiment of the present invention provide one kind
The specific example of the set location of temperature sensor in above-mentioned GIS device internal connection overheating fault simulation test device：
Exemplarily, in the GIS device internal connection overheating fault simulation test device, including fault simulation section and normal
Analog section, wherein, normal analog section may include two normal simulation subsegments, and fault simulation section passes through with the first normal simulation subsegment
Disc insulator is connected, and the first normal simulation subsegment is connected with the second normal simulation subsegment also by disc insulator, GIS device
Including three-phase conductor, 16 points for measuring temperature, tool can be set as failure phase conductor in optional any one phase conductor on the failure phase conductor
Body, respectively A, B, C, D, E, F 6 points for measuring temperature are provided with the corresponding failure conductor 11 of fault simulation section, first
Be provided with the corresponding first normal conductor 21a of normal simulation subsegment respectively G, H, I, J, K, L, M, N, 8 points for measuring temperature,
Second normally simulates 2 points for measuring temperature that respectively O, P are provided with the corresponding second normal conductor 21b of subsegment, above-mentioned 16 surveys
In warm spot, the position of each point for measuring temperature as shown in Figure 4 and Figure 5, wherein, six surveys of A, B, C, D, E, F on failure conductor 11
The position of warm spot and the position of six points for measuring temperature of G, H, I, J, K, L on the first normal conductor 21a are relative to disc insulator 4
Symmetrically；And on two other non-faulting phase conductor, 8 points for measuring temperature can be set respectively, on the corresponding conductor of fault simulation section
Two points for measuring temperature of Q, R are provided with, be provided with tetra- points for measuring temperature of S, T, U, V on the corresponding conductor of subsegment in the first normal simulate,
Second normal simulates be provided with two points for measuring temperature of W, X, particular location such as Fig. 6 and figure of each point for measuring temperature on the corresponding conductor of subsegment
Shown in 7；32 points for measuring temperature can be set in the outer surface of the shell of GIS device body, specifically, B in Fig. 4 on failure phase conductor,
4 thermometrics are provided with the outer surface of the shell of the corresponding GIS device body of each point for measuring temperature in C, D, E, H, I, J, K
Point, this 4 points for measuring temperature the outer surface of the shell of GIS device body particular location as shown in figure 8, black round dot is represented in figure
Point for measuring temperature；128 points for measuring temperature can be set on the intrinsic internal fixation plate of outer surface of outer cover and GIS device of GIS device body,
Specifically, the corresponding GIS device body of each point for measuring temperature in A, F, G, L, M, N, O, P in Fig. 4 and Fig. 5 on failure phase conductor
Shell outer surface and the intrinsic internal fixation plate of GIS device on be provided with 16 points for measuring temperature, this 4 points for measuring temperature
Particular location on the intrinsic internal fixation plate of outer surface of outer cover and GIS device of GIS device body is as shown in figure 9, in figure
Black round dot represents point for measuring temperature；The disc insulator outer surface being arranged between fault simulation section and normal analog section may also set up
8 points for measuring temperature；The temperature sensor of 3 determination of the environment temperature can be set at distance test (DT) device 2m position.
The embodiment of the present invention provides a kind of GIS device internal connection overheating fault simulation experiment method, is set using above-mentioned GIS
Standby internal connection overheating fault simulation test device is tested, specifically, as shown in Figure 10, the GIS device internal connection mistake
Hot stall simulation experiment method includes：
Step S1, the experiment front loop resistance value for obtaining GIS device body.
Step S2, the input of the output end of strong current generator and fault simulation section is connected, by normal analog section
Output end is connected with the input of strong current generator, and sets the output valve of strong current generator, adjusts GIS device body
Air pressure is to nominal pressure.
It should be noted that in above-mentioned steps 2, also can be by the input of the output end of strong current generator and normal analog section
End is connected, and the output end of fault simulation section is connected with the input of strong current generator, those skilled in the art can be according to reality
Border situation is configured, and the embodiment of the present invention is not limited to this.
Step S3, by strong current generator, be passed through electric current to fault simulation section.
Step S4, the temperature sensor of outer surface by being arranged on failure conductor, obtain and record failure conductor it is outer
The temperature value on surface.
Step S5, the temperature sensor of outer surface by being arranged on normal conductor, obtain and record normal conductor it is outer
The temperature value on surface.
Step S6, the temperature sensor of the outer surface of housing by being arranged on GIS device body, are obtained and record GIS
The temperature value of the outer surface of the housing of apparatus body.
It should be noted that for above-mentioned steps S4, step S5 steps S6 specific sequencing, the embodiment of the present invention is not
Limited, specifically, step S4, step S5 and step S6 can be carried out simultaneously.
Step S7, by predetermined test period, be each turned off strong current generator with fault simulation section and normally simulate
The connection of section.
Loop resistance value after step S8, the experiment of acquisition GIS device body.
Step S9, according to the experiment front loop resistance value of GIS device body, the temperature value of the outer surface of failure conductor, just
Often after the temperature value of the outer surface of conductor, the temperature value of the outer surface of the housing of GIS device body, the experiment of GIS device body
Loop resistance value, obtains preliminary comparison's result of the running status of fault simulation section and the running status of normal analog section.
The beneficial effect for the GIS device internal connection overheating fault simulation experiment method that the present embodiment is provided can refer to above-mentioned
The beneficial effect of GIS device internal connection overheating fault simulation test device, is no longer repeated herein.
Exemplarily, it is passed through in above-mentioned steps S3 by strong current generator to fault simulation section after electric current, it is above-mentioned
GIS device internal connection overheating fault simulation experiment method may also include：
By the temperature sensor on the internal fixation plate in the housing of GIS device body, obtain and record GIS is set
The temperature value of sulfur hexafluoride gas in the housing of standby body；
According to the operation shape of the temperature value of the sulfur hexafluoride gas in the housing of GIS device body, and fault simulation section
Running status preliminary comparison's result of state and normal analog section, obtains the running status of fault simulation section and the fortune of normal analog section
The optimization comparing result of row state.
Staff just more accurately can judge whether GIS device inside occurs according to above-mentioned optimization comparing result
The failure of joint overheat, further ensures the safe operation of the power system using the GIS device.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (12)
1. a kind of GIS device internal connection overheating fault simulation test device, it is characterised in that including：GIS device body, institute
Fault simulation section and normal analog section that GIS device body includes being sequentially connected are stated, the corresponding failure of fault simulation section is led
Body is overheated in galvanization, and the corresponding normal conductor of the normal analog section is connected by joint with the failure conductor；
The outer surface of the housing of the outer surface of the failure conductor, the outer surface of the normal conductor and the GIS device is all provided with
It is equipped with temperature sensor.
2. GIS device internal connection overheating fault simulation test device according to claim 1, it is characterised in that described
Normal analog section includes multiple normal simulation subsegments, and the two neighboring normal corresponding normal conductor of subsegment of simulating passes through
The joint connection.
3. GIS device internal connection overheating fault simulation test device according to claim 1, it is characterised in that described
The area of the passage section of failure conductor is less than the area of the passage section of the normal conductor.
4. GIS device internal connection overheating fault simulation test device according to claim 3, it is characterised in that described
Failure conductor includes our department and through-flow portion, and the outer surface in described our department and the through-flow portion is provided with the temperature sensor；
The through-flow portion is the through-flow portion of irony, and described our department is aluminum our department, and the normal conductor is aluminum normal conductor.
5. GIS device internal connection overheating fault simulation test device according to claim 1, it is characterised in that described
At least one internal fixation plate is provided with the housing of GIS device body；
The housing of the diameter of the internal fixation plate and the GIS device body matches, and the internal fixation plate is offered for described
The through hole that failure conductor and/or the normal conductor are passed through, the internal fixation plate is provided with temperature sensor.
6. GIS device internal connection overheating fault simulation test device according to claim 5, it is characterised in that described
Internal fixation plate is phenolic resin network structure.
7. the GIS device internal connection overheating fault simulation test device according to any one of claim 1~6, its feature
It is that the temperature sensor is platinum resistance temperature sensor or copper resistance temperature sensor.
8. GIS device internal connection overheating fault simulation test device according to claims 1 to 6, it is characterised in that institute
The temperature rise tester that temperature sensor is stated with the temperature signal for receiving the temperature sensor collection is connected.
9. GIS device internal connection overheating fault simulation test device according to claim 1, it is characterised in that described
GIS device internal connection overheating fault simulation test device also includes being used to test the temperature of the housing of the GIS device body
Infrared thermography.
10. GIS device internal connection overheating fault simulation test device according to claim 1, it is characterised in that described
GIS device internal connection overheating fault simulation test device also includes the environment temperature sensor for test environment temperature.
11. a kind of GIS device internal connection overheating fault simulation experiment method, it is characterised in that using such as claim 1~10
GIS device internal connection overheating fault simulation test device described in any one is tested, the GIS device internal connection mistake
Hot stall simulation experiment method includes：
Obtain the experiment front loop resistance value of GIS device body；
The output end of strong current generator is connected with the input of fault simulation section, by the output end of normal analog section and big electricity
The input of flow-generator is connected, and sets the output valve of the strong current generator, the air pressure of the regulation GIS device body
To nominal pressure；
By the strong current generator, electric current is passed through to fault simulation section；
By the temperature sensor for the outer surface for being arranged on failure conductor, the temperature of the outer surface of the failure conductor is obtained and recorded
Angle value；
By the temperature sensor for the outer surface for being arranged on normal conductor, the temperature of the outer surface of the normal conductor is obtained and recorded
Angle value；
By the temperature sensor of the outer surface of the housing that is arranged on GIS device body, the GIS device body is obtained and recorded
Housing outer surface temperature value；
By predetermined test period, the strong current generator and fault simulation section and the normal analog section are each turned off
Connection；
Obtain loop resistance value after the experiment of the GIS device body；
According to the experiment front loop resistance value of the GIS device body, the temperature value of the outer surface of the failure conductor, it is described just
The temperature value of the outer surface of normal conductor, the temperature value of the outer surface of the housing of the GIS device body, the GIS device body
Experiment after loop resistance value, obtain the running status of fault simulation section and the running status of the normal analog section just
Walk comparing result.
12. GIS device internal connection overheating fault simulation experiment method according to claim 11, it is characterised in that
By the strong current generator, it is passed through to fault simulation section after electric current, the GIS device internal connection overheating fault
Simulation experiment method also includes：
By the temperature sensor on the internal fixation plate in the housing of the GIS device body, obtain and record is described
The temperature value of sulfur hexafluoride gas in the housing of GIS device body；
According to the fortune of the temperature value of the sulfur hexafluoride gas in the housing of the GIS device body, and fault simulation section
Running status preliminary comparison's result of row state and the normal analog section, obtains running status and the institute of the fault simulation section
State the optimization comparing result of the running status of normal analog section.
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| CN107515363A (en) * | 2017-08-08 | 2017-12-26 | 国网重庆市电力公司电力科学研究院 | A kind of analogue means of solid insulation ablation in sulfur hexafluoride atmosphere |
| CN108709643A (en) * | 2018-06-07 | 2018-10-26 | 国网宁夏电力有限公司电力科学研究院 | GIS device inner heat condition test system based on infrared imaging |
| CN109669089A (en) * | 2019-02-20 | 2019-04-23 | 国网浙江省电力有限公司电力科学研究院 | A kind of GIS device poor contact temperature rise analogue test platform |
| CN109856487A (en) * | 2019-03-14 | 2019-06-07 | 国网山东省电力公司电力科学研究院 | Study the fever simulator of GIS inner conductor and skin temperature corresponding relationship |
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| CN110426613A (en) * | 2019-08-22 | 2019-11-08 | 南方电网科学研究院有限责任公司 | A kind of GIS device over-heat inside fault judgment method and device |
| CN111880122A (en) * | 2020-06-30 | 2020-11-03 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Device and method for evaluating contact state of contact seat and conductive rod of GIL equipment |
| CN113091916A (en) * | 2021-04-21 | 2021-07-09 | 国网山西省电力公司检修分公司 | GIS disconnecting switch fault diagnosis method |
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| CN109856487A (en) * | 2019-03-14 | 2019-06-07 | 国网山东省电力公司电力科学研究院 | Study the fever simulator of GIS inner conductor and skin temperature corresponding relationship |
| CN110426611A (en) * | 2019-08-15 | 2019-11-08 | 南方电网科学研究院有限责任公司 | Three-phase branch mailbox GIS inner conductor overheating fault simulation test device and method |
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| CN111880122A (en) * | 2020-06-30 | 2020-11-03 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | Device and method for evaluating contact state of contact seat and conductive rod of GIL equipment |
| CN113091916A (en) * | 2021-04-21 | 2021-07-09 | 国网山西省电力公司检修分公司 | GIS disconnecting switch fault diagnosis method |
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