CN106944767B - High lead semiconductor weld-aiding cream, preparation method and tin cream - Google Patents
High lead semiconductor weld-aiding cream, preparation method and tin cream Download PDFInfo
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- CN106944767B CN106944767B CN201710338107.0A CN201710338107A CN106944767B CN 106944767 B CN106944767 B CN 106944767B CN 201710338107 A CN201710338107 A CN 201710338107A CN 106944767 B CN106944767 B CN 106944767B
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- weld
- lead semiconductor
- activator
- cream
- high lead
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
Abstract
The present invention provides a kind of high lead semiconductor weld-aiding cream, calculated in weight percent, the high lead semiconductor weld-aiding cream includes following components: rosin 20-30%, resin 1-5%, high boiling solvent 20-30%, thixotropic agent 2-4%, organic active agent 6-8%, high temperature active agent 1-3%, antioxidant 1-3%, monoacid 1-2%, organic amine 1-3%, activator 19.5-25%.The present invention also provides a kind of preparation method of high lead semiconductor weld-aiding cream and high lead semiconductor tin creams.Weld-aiding cream activity of the invention is higher, the rate of spread is big, it is strong with the compatibility of high metal, high lead semiconductor tin cream obtained is suitable for the large power semiconductor device welded encapsulation to work under high temperature environment, tin cream and gold, copper, silver-colored melting are good, weld strength is big, and the impedance of postwelding surface insulation is high, and product reliability is strong.
Description
Technical field
The present invention relates to semiconductor packages fields, and in particular to a kind of high lead semiconductor weld-aiding cream, preparation method with
And tin cream.
Background technique
Semiconductor devices is the main and important component of electronic product, usually signified semiconductor assembling
(assembly) it may be defined as: utilizing membrane technology and fine interconnection technique by semiconductor chip (chip) and frame
(leadframe) or in substrate (sulbstrate) or plastic tab (film) or printed wiring board conductor part connection so as to
Wiring pin is drawn, and is fixed by plasticity dielectric encapsulating, the technology of whole stereochemical structure is constituted.
The service life length of electronic product most depend on semiconductor devices welding situation, the high life of electronic product
It is required that the adverse circumstances such as product energy high-low temperature resistant and high humility.Important component of the weld-aiding cream as tin cream, the property of weld-aiding cream
The using effect that tin cream can be affected, due to existing weld-aiding cream, activity is low, and solvability is weaker, the poor compatibility with alloy,
It is poor so as to cause tin cream performance, when tin cream obtained by existing weld-aiding cream is applied to the welding of semiconductor devices, weld strength
Small, tin cream mobility is small, be easy to cause failure welding and causes cavity, especially large-power semiconductor device, is in high temperature
When in environment, intensity is obviously insufficient after welding, and existing tin cream is for the compatibility ratio of the products such as gold-plated, copper facing, silver-plated
Poor, when being applied on these products, intensity is also obvious insufficient.
Summary of the invention
In consideration of it, it is necessary to provide a kind of high lead semiconductor weld-aiding cream, preparation method and tin creams, by largely studying
And experiment, high lead semiconductor weld-aiding cream of the invention, activity is high, and the rate of spread is big, height obtained strong with the compatibility of high metal
Lead semiconductor tin cream is suitable for the large power semiconductor device welded encapsulation to work under high temperature environment, tin cream and gold, copper, silver-colored phase
Fusibleness is good, and weld strength is big, and the impedance of postwelding surface insulation is high, and product reliability is strong.
The first aspect of the present invention provides a kind of high lead semiconductor weld-aiding cream, calculated in weight percent, the high lead half
Conductor weld-aiding cream includes following components: rosin 20-30%, resin 1-5%, high boiling solvent 20-30%, thixotropic agent 2-4%, being had
Machine activating agent 6-8%, high temperature active agent 1-3%, antioxidant 1-3%, monoacid 1-2%, organic amine 1-3%, activator 19.5-
25%.
Further, calculated in weight percent, the high lead semiconductor weld-aiding cream includes following components: rosin 25-
30%, resin 1-5%, high boiling solvent 25-30%, thixotropic agent 2-4%, organic active agent 6-8%, high temperature active agent 1-3%,
Antioxidant 1-3%, monoacid 1-2%, organic amine 1-3%, activator 19.5-21%.
Further, the activator includes the following components calculated by the weight percent in the activator: more
First acid 9-12%, binary acid 3-6%, alcohols solvent 80-85%.
Further, the activator includes the following components calculated by the weight percent in the activator: more
First acid 10.08%, binary acid 5.24%, alcohols solvent 84.68%.
Further, the alcohols solvent is at least one of following: diethylene glycol octyl ether, diethylene glycol hexyl ether, 2- second
Base -1,3- hexylene glycol, triethylene glycol propyl ether, ethylene glycol phenyl ether.
Second aspect of the present invention provides a kind of preparation method of high lead semiconductor weld-aiding cream, comprising the following steps:
(1) rosin 20-30wt.%, resin 1-5wt.%, high boiling solvent 20- are successively added into a container
30wt.%, thixotropic agent 2-4wt.%, organic active agent 6-8wt.%, high temperature active agent 1-3wt.%, antioxidant 1-3wt.%,
Monoacid 1-2wt.% is heated and is stirred continuously to whole dissolutions, and heating temperature is not higher than 150 DEG C；
(2) stop heating, the mixture in (1) is cooled to 50-60 DEG C；
(3) organic amine 1-3wt.% and activator 19.5-25wt.% is added, stirs evenly to obtain finished product.
Further, the activator the preparation method is as follows: by polyacid 9-12wt.%, binary acid 3-6wt.%, alcohol
Heating and stirring and dissolving in a beaker is added in class solvent 80-85wt.%.
The third aspect of the present invention provides a kind of high lead semiconductor tin cream, and calculated in weight percent, the high lead is partly led
Body tin cream by weight percentage, including the high lead semiconductor weld-aiding cream 10-20% and soldering alloy powder 80-90%,
In, leaded weight percent is not less than 85% in the soldering alloy powder.
Further, the soldering alloy powder includes at least one of following: Sn10Pb88Ag2, Sn5Pb95,
Sn5Pb92.5Ag2.5,Sn10Pb90。
A kind of high lead semiconductor weld-aiding cream provided by the invention, activity is high, and good fluidity, the rate of spread is big, with high metal
The compatibility of (such as Sn (Ag) Pb system) is strong, and high lead semiconductor weld-aiding cream manufacture craft provided by the invention, first uses phase
Mixture A is made to higher temperatures, the mixing situation between each component, deoxidation ability can be improved in the case where keeping active situation
By force, it improves mobility and adds mixture B and organic amine, it is ensured that the work of rosin in the lower situation of mixture A temperature
Property, the compatibility of weld-aiding cream and high metal is improved, a kind of high lead semiconductor tin cream provided by the invention is suitable for hot environment
The high power semi-conductor welded encapsulation of lower work, good with gold, copper, silver-colored compatibility, voidage is low, and weld strength is big, postwelding table
Face insulation impedance is high, and tin cream good fluidity facilitates operation, and tin sweat(ing) is not likely to produce after welding, remains easy cleaning, and solder joint is bright, on
Tin is good, meets the Release Clause of ROHS instruction.
Specific embodiment
The present invention is described in detail combined with specific embodiments below, it should be noted that following embodiment be for
It is convenient to technical staff and understands the present invention, and do not lie in and limit the scope of the invention, those of ordinary skill in the art,
Under the premise of not departing from basic conception of the invention, protection scope of the present invention is should belong in the improvement made.
In the present invention, the rosin includes but is not limited to following type: newtrex, hydrogenated rosin, modified rosin, pine
Fragrant derivative.
High boiling solvent includes but is not limited to following type: ethylene glycol, butanediol, hexylene glycol, pungent triol, diethylene glycol second
Ether, diethylene glycol hexyl ether, dimethyl acetamide, 2- ethyl -1,3- pentanediol.
Thixotropic agent includes but is not limited to following type: double stearic amides, organobentonite, rilanit special, polyamide
Wax.
Antioxidant includes but is not limited to following type: antioxidant BHT, anti-oxidant DLTP, antioxidant 1010, irgasfos 168,
Antioxidant 1076, antioxidant T501.
Alcohols solvent includes but is not limited to following type: diethylene glycol octyl ether, diethylene glycol hexyl ether, 2- ethyl -1,3- oneself
Glycol, triethylene glycol propyl ether, ethylene glycol phenyl ether.
Embodiment 1:
A kind of preparation method of high lead semiconductor weld-aiding cream, includes the following steps: involved in the present embodiment
Step (1): preparing mixture A, and following components successively is added into a container, is heated to 100 DEG C and is stirred continuously
To whole dissolutions, mixture A is obtained, the weight percent that each component accounts for weld-aiding cream is respectively as follows: rosin 30wt.%, resin
3wt.%, high boiling solvent 30wt.%, thixotropic agent 3wt.%, organic active agent 7wt.%, high temperature active agent 2wt.%, antioxygen
Agent 2wt.%, monoacid 1.5wt.%.
Step (2): preparing activator B, is added in a beaker and heats and stir molten polyacid, binary acid, alcohols solvent
Solution, wherein polyacid, binary acid and alcohols solvent account for respectively activator B weight percent be 10.8wt.%, 5.24wt.%,
74.68wt.%.
Step (3): the mixture A in step (1) is cooled to 50-60 DEG C.
Step (4): organic amine and activator B are added into mixture A after cooling, wherein each component accounts for weld-aiding cream
Weight percent is respectively as follows: organic amine 2wt.% and activator 19.5wt.%, stirs evenly to obtain finished product.
Embodiment 2:
A kind of preparation method of high lead semiconductor weld-aiding cream, includes the following steps: involved in the present embodiment
Step (1): preparing mixture A, and following components successively is added into a container, is heated to 120 DEG C and is stirred continuously
To whole dissolutions, mixture A is obtained, the weight percent that each component accounts for weld-aiding cream is respectively as follows: rosin 25wt.%, resin
5wt.%, high boiling solvent 25wt.%, thixotropic agent 4wt.%, organic active agent 8wt.%, high temperature active agent 3wt.%, antioxygen
Agent 3wt.%, monoacid 2wt.%.
Step (2): preparing activator B, is added in a beaker and heats and stir molten polyacid, binary acid, alcohols solvent
Solution, wherein polyacid, binary acid and alcohols solvent account for respectively activator B weight percent be 9wt.%, 6wt.%,
85wt.%.
Step (3): the mixture A in step (1) is cooled to 50-60 DEG C.
Step (4): organic amine and activator B are added into mixture A after cooling, wherein each component accounts for weld-aiding cream
Weight percent is respectively as follows: organic amine 1wt.% and activator 24wt.%, stirs evenly to obtain finished product.
Embodiment 3:
Step (1): preparing mixture A, and following components successively is added into a container, be heated to 70 DEG C and be stirred continuously to
All dissolutions, obtain mixture A, the weight percent that each component accounts for weld-aiding cream be respectively as follows: rosin 20wt.%, resin 5wt.%,
High boiling solvent 30wt.%, thixotropic agent 4wt.%, organic active agent 8wt.%, high temperature active agent 1wt.%, antioxidant
3wt.%, monoacid 2wt.%.
Step (2): preparing activator B, is added in a beaker and heats and stir molten polyacid, binary acid, alcohols solvent
Solution, wherein polyacid, binary acid and alcohols solvent account for respectively activator B weight percent be 12wt.%, 5wt.%,
83wt.%.
Step (3): the mixture A in step (1) is cooled to 50-60 DEG C.
Step (4): organic amine and activator B are added into mixture A after cooling, wherein each component accounts for weld-aiding cream
Weight percent is respectively as follows: organic amine 3wt.% and activator 24wt.%, stirs evenly to obtain finished product.
Embodiment 4:
Step (1): preparing mixture A, and following components successively is added into a container, is heated to 145 DEG C and is stirred continuously
To whole dissolutions, mixture A is obtained, the weight percent that each component accounts for weld-aiding cream is respectively as follows: rosin 28wt.%, resin
5wt.%, high boiling solvent 27wt.%, thixotropic agent 3wt.%, organic active agent 8wt.%, high temperature active agent 2.5wt.%, resist
Oxygen agent 1.5wt.%, monoacid 1.5wt.%.
Step (2): preparing activator B, is added in a beaker and heats and stir molten polyacid, binary acid, alcohols solvent
Solution, wherein polyacid, binary acid and alcohols solvent account for respectively activator B weight percent be 9wt.%, 6wt.%,
85wt.%.
Step (3): the mixture A in step (1) is cooled to 60 DEG C.
Step (4): organic amine and activator B are added into mixture A after cooling, wherein each component accounts for weld-aiding cream
Weight percent is respectively as follows: organic amine 3wt.% and activator 20.5wt.%, stirs evenly to obtain finished product.
Embodiment 1-4 is tested with existing weld-aiding cream by IPC-TM-650 and QQ-S-571E test method, is surveyed
Test result is shown, for the weld-aiding cream of embodiment 1-4 is than existing weld-aiding cream, activity is higher, and the rate of spread is big, good fluidity, profit
It is moist good, it is strong with the compatibility of high metal, it is suitble to the large power semiconductor device welded encapsulation to work under hot environment, is not easy
Device is damaged, the service life is long.
The embodiment of the present invention provides a kind of high lead semiconductor tin cream, and high lead semiconductor prepared by embodiment 1-4 can be used
Weld-aiding cream preparation, and soldering alloy of the leaded weight percent not less than 85% is added in the high lead semiconductor weld-aiding cream
Powder, soldering alloy powder can be used but be not limited to: Sn10Pb88Ag2, Sn5Pb95, Sn5Pb92.5Ag2.5, Sn10Pb90, with weight
It measures percentage to calculate, high lead semiconductor tin cream includes high lead semiconductor weld-aiding cream 10-20% and soldering alloy powder 80-90%, is obtained
To following embodiment:
Embodiment A:
Using high lead semiconductor weld-aiding cream 10wt.% and soldering alloy powder (Sn10Pb88Ag2) 90wt.%, it is prepared
Weld-aiding cream.
Embodiment B:
Using high lead semiconductor weld-aiding cream 10wt.% and soldering alloy powder (Sn5Pb95) 90wt.%, it is prepared and helps weldering
Cream.
Embodiment C:
Using high lead semiconductor weld-aiding cream 20wt.% and soldering alloy powder (Sn10Pb88Ag2) 80wt.%, it is prepared
Tin cream.
Embodiment D:
Using high lead semiconductor weld-aiding cream 15wt.% and soldering alloy powder (Sn10Pb88Ag2) 85wt.%, it is prepared
Tin cream.
Comparative example E
Using high lead semiconductor weld-aiding cream 10wt.% and soldering alloy powder (Sn20Pb80) 90wt.%, tin is prepared
Cream.
In embodiment A-D, obtained tin cream is suitble to the large power semiconductor device welded encapsulation to work under hot environment, in advance
The hot time is short, and wetting ability is strong, and good with gold, copper, silver-colored compatibility, hole ratio is small, and weld strength is big, postwelding surface insulation impedance
Height, tin cream good fluidity facilitate operation, and tin sweat(ing) is not likely to produce after welding, remain easy cleaning, and solder joint is bright, and upper tin is good, comparison
In example E, obtained tin cream, poor fluidity, when the large power semiconductor device to work under to hot environment is packaged welding,
It is easy to appear insecure phenomenon, and also poor with gold, copper, silver-colored compatibility, easily collapse bridge joint.
Finally it should be noted that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although reference
Preferred embodiment describes the invention in detail, those skilled in the art should understand that, it can be to of the invention
Technical solution is modified or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (8)
1. a kind of high lead semiconductor weld-aiding cream, which is characterized in that calculated in weight percent, the high lead semiconductor weld-aiding cream packet
Include following components: rosin 20-30%, resin 1-5%, high boiling solvent 20-30%, thixotropic agent 2-4%, organic active agent 6-
8%, high temperature active agent 1-3%, antioxidant 1-3%, monoacid 1-2%, organic amine 1-3%, activator 19.5-25%, it is described
Activator includes polyacid, binary acid and alcohols solvent, wherein weight percent of the polyacid in the activator be
9-12%, the binary acid are 3-6%, the alcohols solvent in the activator in the weight percent in the activator
Weight percent be 80-85%.
2. high lead semiconductor weld-aiding cream according to claim 1, which is characterized in that calculated in weight percent, the height
Lead semiconductor weld-aiding cream includes following components: rosin 25-30%, resin 1-5%, high boiling solvent 25-30%, thixotropic agent 2-
4%, organic active agent 6-8%, high temperature active agent 1-3%, antioxidant 1-3%, monoacid 1-2%, organic amine 1-3%, activation
Agent 19.5-21%.
3. high lead semiconductor weld-aiding cream according to claim 1, which is characterized in that the activator includes by the work
The following components that weight percent in agent calculates: polyacid 10.08%, binary acid 5.24%, alcohols solvent 84.68%.
4. high lead semiconductor weld-aiding cream according to claim 1, which is characterized in that the alcohols solvent be it is following at least
It is a kind of: diethylene glycol octyl ether, diethylene glycol hexyl ether, 2- ethyl -1,3- hexylene glycol, triethylene glycol propyl ether, ethylene glycol phenyl ether.
5. a kind of preparation method of high lead semiconductor weld-aiding cream, which comprises the following steps:
(1) rosin 20-30wt.%, resin 1-5wt.%, high boiling solvent 20-30wt.%, touching are successively added into a container
Become agent 2-4wt.%, organic active agent 6-8wt.%, high temperature active agent 1-3wt.%, antioxidant 1-3wt.%, monoacid 1-
2wt.% is heated and is stirred continuously to whole dissolutions, and heating temperature is not higher than 150 DEG C；
(2) stop heating, the mixture in (1) is cooled to 50-60 DEG C；
(3) organic amine 1-3wt.% and activator 19.5-25wt.% is added, stirs evenly to obtain finished product, the activator includes pressing
The following components that weight percent in the activator calculates: polyacid 9-12%, binary acid 3-6%, alcohols solvent 80-
85%.
6. the preparation method of high lead semiconductor weld-aiding cream according to claim 5, which is characterized in that the system of the activator
Preparation Method is as follows: polyacid 9-12wt.%, binary acid 3-6wt.%, alcohols solvent 80-85wt.% being added in a beaker and added
Heat and stirring and dissolving.
7. a kind of high lead semiconductor tin cream, which is characterized in that calculated in weight percent, the high lead semiconductor tin cream is with weight
Percentages, including high lead semiconductor weld-aiding cream 10-20% according to any one of claims 1-4 and soldering alloy powder 80-
90%, wherein leaded weight percent is not less than 85% in the soldering alloy powder.
8. high lead semiconductor tin cream according to claim 7, which is characterized in that the soldering alloy powder include in following extremely
Few one kind: Sn10Pb88Ag2, Sn5Pb95, Sn5Pb92.5Ag2.5, Sn10Pb90.
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| CN201710338107.0A CN106944767B (en) | 2017-05-15 | 2017-05-15 | High lead semiconductor weld-aiding cream, preparation method and tin cream |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20240042569A (en) * | 2018-10-24 | 2024-04-02 | 알파 어셈블리 솔루션스 인크. | Low temperature soldering solutions for polymer substrates, printed circuit boards and other joining applications |
| CN112077479A (en) * | 2020-09-22 | 2020-12-15 | 深圳市鑫富锦新材料有限公司 | Graphene composite soldering paste for semiconductor chip packaging |
| CN112077480A (en) * | 2020-09-22 | 2020-12-15 | 深圳市鑫富锦新材料有限公司 | Solder paste capable of easily removing rosin |
Citations (3)
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| CN102513735A (en) * | 2011-12-27 | 2012-06-27 | 厦门市及时雨焊料有限公司 | Flux paste for high-bismuth content solder paste and preparation method thereof |
| CN102513732A (en) * | 2011-12-15 | 2012-06-27 | 中南大学 | Halogen-free cleaning-free rosin flux, and preparation and application thereof |
| CN104668818A (en) * | 2015-01-16 | 2015-06-03 | 北京鹏瑞中联科技有限公司 | Low-voidage soldering paste for packaging semiconductor chip and preparation method of low-voidage soldering paste |
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- 2017-05-15 CN CN201710338107.0A patent/CN106944767B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102513732A (en) * | 2011-12-15 | 2012-06-27 | 中南大学 | Halogen-free cleaning-free rosin flux, and preparation and application thereof |
| CN102513735A (en) * | 2011-12-27 | 2012-06-27 | 厦门市及时雨焊料有限公司 | Flux paste for high-bismuth content solder paste and preparation method thereof |
| CN104668818A (en) * | 2015-01-16 | 2015-06-03 | 北京鹏瑞中联科技有限公司 | Low-voidage soldering paste for packaging semiconductor chip and preparation method of low-voidage soldering paste |
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