CN106938935A - Modified aluminium nitride ceramic substrate and its production method - Google Patents
Modified aluminium nitride ceramic substrate and its production method Download PDFInfo
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- CN106938935A CN106938935A CN201710279801.XA CN201710279801A CN106938935A CN 106938935 A CN106938935 A CN 106938935A CN 201710279801 A CN201710279801 A CN 201710279801A CN 106938935 A CN106938935 A CN 106938935A
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Abstract
The invention discloses modified aluminium nitride ceramic substrate, its innovative point is:By aluminium nitride, α Al2O3Nanometer powder, sintering aid, prepared without benzene ternary solvent system, dispersant, binding agent and plasticizer;Wherein α Al2O3The average grain diameter of nanometer powder is 30nm, specific surface area >=238m2/g;Sintering aid is by CaO, Y2O3And any two or more is proportionally mixed in CaC;Without the mixed solvent that benzene ternary solvent system is ethanol, isopropanol and butanone;Prepared by flow casting molding and low-temperature sintering method.The α Al that the present invention is used2O3Nanometer powder, even particle size distribution, purity are high, disperse with fabulous, and it is higher than surface, improves product strength;Casting molding processes, greatly improve in production efficiency, aluminium nitride powder addition ternary agglutinant so that sintering reaches high thermal conductivity under middle cryogenic conditions, saving energy consumption, reduce production cost, and without benzene ternary solvent system, good dispersion, and it is nontoxic.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramic substrate, and in particular to the nitrogen that a kind of addition alumina nano powder is modified
Change aluminium ceramic substrate, further relate to the production method of the aluminium nitride ceramic substrate.
Background technology
With the raising and the development of great power LED of high power module circuit level, to dielectric substrate material used
Higher requirement is proposed, aluminium nitride ceramics material is due to higher thermal conductivity, being widely used to various high-power electricity
The dielectric substrate material of sub- original paper.However, in some miniaturized application fields, in addition to higher thermal conductivity, also requiring
Aluminum nitride ceramic substrate has higher mechanical performance, especially in the thin plate that thickness is less than 0.38mm, it is desirable to which aluminium nitride is made pottery
Porcelain substrate has higher bending strength.In the bracket application of the heat-radiating substrate or semiconductor devices of some (PCC) powers, it is
The preferable mechanical performance of acquisition and thermal shock resistance, method of the people often using control grain growth are to obtain fine grain micro-
Structure.Fine grain microstructure is obtained by controlling the method for grain growth to improve mechanical performance and thermal shock resistance, defect
It is that the thermal conductivity of aluminium nitride ceramic substrate is reduced.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of modification aluminium nitride pottery with high heat conductance, high intensity
Ceramic chip.
In order to solve the above technical problems, the technical solution adopted in the utility model is:
Aluminium nitride ceramic substrate is modified, its innovative point is:By aluminium nitride, α-Al2O3Nanometer powder, sintering aid, without benzene
What ternary solvent system, dispersant, binding agent and plasticizer were prepared;
Described α-Al2O3The average grain diameter of nanometer powder is 30nm, specific surface area >=238m2/g;
Described sintering aid is by CaO, Y2O3, two or more any composition in CaF, BN and CaC;
It is described without the mixed solvent that benzene ternary solvent system is ethanol, isopropanol and butanone;
Described dispersant is one kind in fish oil, glycerine or castor oil;
The binding agent is polyvinyl butyral resin;
The plasticizer is dibutyl phthalate.
It is a further object of the present invention to provide the production method of modified aluminium nitride ceramic substrate, using the method for flow casting molding
Prepared, it is specific as follows:By aluminium nitride, α-Al2O3Nanometer powder and sintering aid are mixed in proportion;By mixed powder
It is dissolved in no benzene ternary solvent system, adds dispersant, a ball milling is carried out on ball mill, Ball-milling Time is 33 hours,
Then ground 24-27 hours in addition binding agent and plasticizer;The froth in vacuum under subnormal ambient;With casting machine to handling well
Slurry carries out flow casting molding, and it is highly 2.4-2.7mm to control scraper, and curtain coating belt speed is 0.1-0.3m/ points, and drying temperature is 500-
580℃;Idiosome continuous dumping 2.5h in continous way draft glue discharging furnace is cast, temperature is 580 DEG C;Curtain coating green compact are put into sintering furnace
In, sinter under nitrogen protection, sintering temperature is 1555-1675 DEG C.
Beneficial effects of the present invention:
1) α-Al that the present invention is used2O3Nanometer powder even particle size distribution, purity are high, disperse with fabulous, and it compares surface
Height, with resistant to elevated temperatures inertia, high activity, porous, hardness is high, good stability of the dimension, improves shaping and sintering character, carries
High product intensity.
2) casting molding processes, greatly improve addition ternary agglutinant in production efficiency, aluminium nitride powder so that low in
Sintering reaches high thermal conductivity under the conditions of temperature, and saving energy consumption reduces production cost.
3) present invention is using without benzene ternary solvent system, good dispersion, and nontoxic.
Embodiment
Specific embodiment elaborates to the technical solution of the utility model below.
Embodiment 1
Modified aluminium nitride ceramic substrate, by aluminium nitride, the α-Al that average grain diameter is 15nm2O3Nanometer powder, Y2O3- CaF burns
It is prepared by mixed solvent, glycerine, polyvinyl butyral resin and the dibutyl phthalate for tying auxiliary agent, ethanol, isopropanol and butanone
Obtain;Specific surface area >=238m of aluminium oxide nano powder2/g。
Modified aluminium nitride ceramic substrate is prepared through low-temperature sintering using the tape casting, by aluminium nitride, α-Al2O3Nanometer powder and
Sintering aid presses 1:0.01:0.02 mass ratio mixing;Mixed powder is dissolved in ethanol, isopropanol and butanone (1:1:2)
Mixed solvent in, add glycerine, a ball milling carried out on ball mill, Ball-milling Time is 33 hours, then add it is poly-
Vinyl butyral and dibutyl phthalate are ground 24-27 hours;The froth in vacuum under subnormal ambient;With casting machine to place
The slurry managed carries out flow casting molding, and it is highly 2.4mm to control scraper, and curtain coating belt speed is 0.1m/ points, and drying temperature is 500 DEG C;
Idiosome continuous dumping 2.5h in continous way draft glue discharging furnace is cast, temperature is 580 DEG C;Curtain coating green compact are put into sintering furnace, in nitrogen
Sintered under gas shielded, sintering temperature is 1580 DEG C, and target product is made.
Embodiment 2
Modified aluminium nitride ceramic substrate, by aluminium nitride, the α-Al that average grain diameter is 20nm2O3Nanometer powder, Y2O3- BN burns
Tie mixed solvent, castor oil, polyvinyl butyral resin and the dibutyl phthalate system of auxiliary agent, ethanol, isopropanol and butanone
For what is obtained;Specific surface area >=238m of aluminium oxide nano powder2/g。
Modified aluminium nitride ceramic substrate is prepared through low-temperature sintering using the tape casting, by aluminium nitride, α-Al2O3Nanometer powder and
Sintering aid presses 1:0.02:0.06 mass ratio mixing;Mixed powder is dissolved in ethanol, isopropanol and butanone (1:1:2)
Mixed solvent in, add castor oil, on ball mill carry out a ball milling, Ball-milling Time be 33 hours, then add
Polyvinyl butyral resin and dibutyl phthalate are ground 24-27 hours;The froth in vacuum under subnormal ambient;With casting machine pair
The slurry handled well carries out flow casting molding, and it is highly 2.4mm to control scraper, and curtain coating belt speed is 0.1m/ points, and drying temperature is 550
℃;Idiosome continuous dumping 2.5h in continous way draft glue discharging furnace is cast, temperature is 580 DEG C;Curtain coating green compact are put into sintering furnace,
Nitrogen protection is lower to be sintered, and sintering temperature is 1620 DEG C, and target product is made.
Embodiment 3
Modified aluminium nitride ceramic substrate, by aluminium nitride, the α-Al that average grain diameter is 15nm2O3Nanometer powder, CaO-Y2O3Burn
It is prepared by mixed solvent, fish oil, polyvinyl butyral resin and the dibutyl phthalate for tying auxiliary agent, ethanol, isopropanol and butanone
Obtain;Specific surface area >=238m of aluminium oxide nano powder2/g。
Modified aluminium nitride ceramic substrate is prepared through low-temperature sintering using the tape casting, by aluminium nitride, α-Al2O3Nanometer powder and
Sintering aid presses 1:0.03:0.08 mass ratio mixing;Mixed powder is dissolved in ethanol, isopropanol and butanone (1:1:2)
Mixed solvent in, add fish oil, a ball milling carried out on ball mill, Ball-milling Time is 33 hours, then add it is poly-
Vinyl butyral and dibutyl phthalate are ground 24-27 hours;The froth in vacuum under subnormal ambient;With casting machine to place
The slurry managed carries out flow casting molding, and it is highly 2.4mm to control scraper, and curtain coating belt speed is 0.1m/ points, and drying temperature is 580 DEG C;
Idiosome continuous dumping 2.5h in continous way draft glue discharging furnace is cast, temperature is 580 DEG C;Curtain coating green compact are put into sintering furnace, in nitrogen
Sintered under gas shielded, sintering temperature is 1675 DEG C, and target product is made.
Above-described embodiment is merely illustrative of the technical solution of the present invention, rather than design and protection domain progress to the present invention
Limit, one of ordinary skill in the art modifies or equivalent to technical scheme, without departing from technology
The objective and scope of scheme, it all should cover in scope of the presently claimed invention.
Claims (2)
1. it is modified aluminium nitride ceramic substrate, it is characterised in that:By aluminium nitride, α-Al2O3Nanometer powder, sintering aid, without benzene ternary
What dicyandiamide solution, dispersant, binding agent and plasticizer were prepared;
Described α-Al2O3The average grain diameter of nanometer powder is 30nm, specific surface area >=238m2/g;
Described sintering aid is by CaO, Y2O3With two or more any composition in CaC;
It is described without the mixed solvent that benzene ternary solvent system is ethanol, isopropanol and butanone;
Described dispersant is one kind in fish oil, glycerine or castor oil;
The binding agent is polyvinyl butyral resin;
The plasticizer is dibutyl phthalate.
2. it is modified the production method of aluminium nitride ceramic substrate, it is characterised in that:Prepared using the method for flow casting molding, specifically
It is as follows:By aluminium nitride, α-Al2O3Nanometer powder and sintering aid are mixed in proportion;Mixed powder is dissolved in no benzene ternary molten
In agent system, dispersant is added, a ball milling is carried out on ball mill, Ball-milling Time is 33 hours, is then adding bonding
Agent and plasticizer are ground 24-27 hours;The froth in vacuum under subnormal ambient;The slurry handled well is cast into casting machine
Type, it is highly 2.4-2.7mm to control scraper, and curtain coating belt speed is 0.1-0.3m/ points, and drying temperature is 500-580 DEG C;It is cast idiosome
The continuous dumping 2.5h in continous way draft glue discharging furnace, temperature is 580 DEG C;Curtain coating green compact are put into sintering furnace, under nitrogen protection
Sintering, sintering temperature is 1555-1675 DEG C.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111875386A (en) * | 2020-08-07 | 2020-11-03 | 福建臻璟新材料科技有限公司 | Aluminum nitride ceramic substrate and preparation method thereof |
CN112142474A (en) * | 2020-09-28 | 2020-12-29 | 西华大学 | Preparation method of water-based tape casting high-thermal-conductivity aluminum nitride ceramic substrate |
CN112266266A (en) * | 2020-11-05 | 2021-01-26 | 衡阳凯新特种材料科技有限公司 | Porous silicon nitride ceramic and preparation method thereof |
CN113582702A (en) * | 2021-08-12 | 2021-11-02 | 山东鹏程陶瓷新材料科技有限公司 | Aluminum nitride ceramic composite material for electronic packaging and preparation method thereof |
CN113773091A (en) * | 2021-08-11 | 2021-12-10 | 臻金新材(深圳)有限公司 | Aluminum nitride ceramic tape-casting slurry, aluminum nitride ceramic substrate and preparation method |
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CN103819196A (en) * | 2013-12-30 | 2014-05-28 | 莱鼎电子材料科技有限公司 | Modified aluminum nitride ceramic substrate and production method thereof |
CN103880428A (en) * | 2013-12-30 | 2014-06-25 | 莱鼎电子材料科技有限公司 | Ternary solvent system aluminum nitride slurry formula for preparing high-heat conduction ceramic substrate |
CN104072158A (en) * | 2014-06-12 | 2014-10-01 | 浙江长兴电子厂有限公司 | Aluminum nitride sintering auxiliary agent and preparation method thereof as well as preparation method of aluminum nitride ceramic substrate |
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CN103819196A (en) * | 2013-12-30 | 2014-05-28 | 莱鼎电子材料科技有限公司 | Modified aluminum nitride ceramic substrate and production method thereof |
CN103880428A (en) * | 2013-12-30 | 2014-06-25 | 莱鼎电子材料科技有限公司 | Ternary solvent system aluminum nitride slurry formula for preparing high-heat conduction ceramic substrate |
CN104072158A (en) * | 2014-06-12 | 2014-10-01 | 浙江长兴电子厂有限公司 | Aluminum nitride sintering auxiliary agent and preparation method thereof as well as preparation method of aluminum nitride ceramic substrate |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111875386A (en) * | 2020-08-07 | 2020-11-03 | 福建臻璟新材料科技有限公司 | Aluminum nitride ceramic substrate and preparation method thereof |
CN112142474A (en) * | 2020-09-28 | 2020-12-29 | 西华大学 | Preparation method of water-based tape casting high-thermal-conductivity aluminum nitride ceramic substrate |
CN112266266A (en) * | 2020-11-05 | 2021-01-26 | 衡阳凯新特种材料科技有限公司 | Porous silicon nitride ceramic and preparation method thereof |
CN113773091A (en) * | 2021-08-11 | 2021-12-10 | 臻金新材(深圳)有限公司 | Aluminum nitride ceramic tape-casting slurry, aluminum nitride ceramic substrate and preparation method |
CN113773091B (en) * | 2021-08-11 | 2023-10-24 | 臻金新材(深圳)有限公司 | Aluminum nitride ceramic casting slurry, aluminum nitride ceramic substrate and preparation method |
CN113582702A (en) * | 2021-08-12 | 2021-11-02 | 山东鹏程陶瓷新材料科技有限公司 | Aluminum nitride ceramic composite material for electronic packaging and preparation method thereof |
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Application publication date: 20170711 |