CN106935529B - Substrate supporting table and manufacturing method thereof - Google Patents
Substrate supporting table and manufacturing method thereof Download PDFInfo
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- CN106935529B CN106935529B CN201511012716.4A CN201511012716A CN106935529B CN 106935529 B CN106935529 B CN 106935529B CN 201511012716 A CN201511012716 A CN 201511012716A CN 106935529 B CN106935529 B CN 106935529B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A substrate support table comprising: the electrostatic chuck is arranged above the heater, and the heater is fixed on the upper surface of the base; wherein the base includes a coolant flow channel therein; the heater comprises a heating element for generating heat, an upper insulating material layer positioned above the heating element and a lower insulating material layer positioned below the heating element, wherein the bottom surface of the lower insulating material layer is fixed on the upper surface of the base, and the heater is characterized in that: the thickness of the lower insulating material layer is larger than 1mm, and the lower insulating material layer comprises at least one metal layer to divide the lower insulating material layer into a plurality of insulating material sub-layers.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a substrate support table used in a reaction chamber of a plasma processor.
Background
Plasma processors are widely used in the semiconductor industry for high precision processing of substrates to be processed, such as plasma etching, Chemical Vapor Deposition (CVD), and the like. The plasma processor includes a reaction chamber having a substrate support table at a bottom thereof for placing and holding a substrate. The support table is used for fixing the substrate and controlling the temperature of the substrate, so that heat generated in plasma processing can be taken away, and meanwhile, the support table is also connected with a radio frequency power supply, and the processing effect on the substrate is adjusted by adjusting the output power of the radio frequency power supply. Therefore, the substrate support table is a multifunctional device which is a core in the plasma processor, and has a great influence on the processing effect of the substrate.
With the development of the semiconductor industry, more and more plasma processing processes are developed, each process requires different optimal temperature parameters, a substrate often needs to be continuously processed in a same reaction chamber, and the corresponding optimal temperature needs to be rapidly switched in different process steps. In order to realize the requirement of rapid temperature change, the prior mechanism designs the substrate support table structure as shown in fig. 1, which includes a base 10, a cooling liquid pipe 11 for circulating cooling liquid is arranged in the base 10 to take away heat, a heater is arranged on the base, and the heater is composed of an upper layer of insulating material 23, a lower layer of insulating material 21 and a layer of insulating material arranged between the upper layer of insulating material and the lower layer of insulating materialA heating element such as a resistance wire 29, and an upper surface of an insulating material layer on the heater is bonded and fixed to an upper electrostatic chuck 30 by a silicone layer 32. Wherein the base is typically made of metal, such as aluminum alloy, and is electrically connected to at least one rf power source. The layers 21, 23 of insulating material are typically made of a ceramic material such as AL2O3，AlN，Y2O3And the like. If the temperature needs to be reduced in the temperature switching process, the heating power output is closed, the cooling liquid in the cooling liquid pipeline below takes away heat, the heater receives electric power to generate a large amount of heat in the temperature increasing process, and the cooling liquid needs to be circulated all the time to take away the heat generated by the upper heater and the plasma and the radio frequency power supply in the processing process. The heat generated by the heater during heating is largely carried away directly by the underlying susceptor 10 and does not reach the substrate on the electrostatic chuck 30. In order to reduce this heat loss and also speed up the warming process, it is desirable to have a lower thermal conductivity between the heating element 29 and the underlying coolant line 11, such as by using a metallic material titanium (about 20W/m.k) with a lower thermal conductivity for the susceptor 10 or by making the insulating material layer 21 under the heating element 29 thicker. Both of these solutions have problems, however: titanium materials are too expensive, and the price of the titanium materials is 4 times higher than that of aluminum alloy materials (the heat conductivity coefficient is 170W/m.k); when the thickness of the insulating-material layer 21 increases beyond 1mm, the insulating-material layer 21 will crack and fail quickly during frequent temperature changes due to the excessive difference in the thermal expansion coefficients of the underlying aluminum alloy and the insulating-material layer. The thickness of the insulating material layer 21 in the prior art is generally between 0.5 and 1mm, and this small thickness also makes it difficult to control the thickness unevenness of the insulating material layer over the entire surface, since the insulating material layer is usually sprayed and has a high surface roughness, and the tolerances of the conventional processes result in the thickness unevenness of the insulating material layer. When the thickness difference of the insulating material at different parts of the material layer with the thickness of 0.5mm reaches 25um, the thickness difference between different areas can reach 5 percent, and the temperature of the substrate positioned above the substrate supporting table is correspondingly influenced, so that uniform temperature distribution is difficult to obtain. Therefore, there is a need in the art for a new method or apparatus for rapidly modifying a substrate support tableThe temperature of the substrate is varied and it is desirable to make the temperature of the substrate more uniform.
Disclosure of Invention
The problem to be solved by the present invention is to provide a substrate supporting table comprising: the electrostatic chuck is arranged above the heater, and the heater is fixed on the upper surface of the base; wherein the base includes a coolant flow channel therein; the heater comprises a heating element for generating heat, an upper insulating material layer positioned above the heating element and a lower insulating material layer positioned below the heating element, wherein the bottom surface of the lower insulating material layer is fixed on the upper surface of the base, and the heater is characterized in that: the thickness of the lower insulating material layer is larger than 1mm, and the lower insulating material layer comprises at least one metal layer to divide the lower insulating material layer into a plurality of insulating material sub-layers. The thickness of the insulating material sub-layers is less than 1mm so as to prevent the insulating material layer from cracking in the temperature variation process, and the preferable thickness of the insulating material sub-layers is less than 0.5mm and more than 0.2 mm.
Wherein the metal layer of the invention is optimally selected to be in a grid shape, and the base is made of aluminum alloy.
Further, the lower insulating material layer may include two metal layers, dividing the lower insulating material layer into first, second, and third insulating material sublayers.
The insulating material layer in the invention is made of a ceramic material comprising one of aluminum oxide, aluminum nitride and yttrium oxide or an organic material selected from one of PEEK, Vespel and Kapton.
The electrostatic chuck of the substrate support table of the present invention is connected to the upper insulating material layer on top of the heater through a silica gel layer.
The invention also provides a manufacturing method of the heater for the substrate supporting table, which comprises the following steps: A. forming a layer of insulating material on the base material to a thickness of less than about 1 mm; B. forming a grid-shaped metal layer on the insulating material layer; C. repeating the above steps A-B to form a lower insulating material layer comprising alternating layers of insulating material and metal, wherein the top layer is a layer of insulating material; D. forming a heating element on the insulating material layer of the top layer, and E.
Drawings
FIG. 1 is a schematic view of a prior art substrate support table;
fig. 2 is a schematic view of a substrate support table of the present invention.
Detailed Description
Referring to fig. 2, a substrate support table according to the present invention is shown, which has a basic structure similar to that of the prior art shown in fig. 1, and is mainly different from the prior art in that the substrate support table 10 according to the present invention includes a plurality of insulating material layers 21, 23, 25, 27, and two metal layers 22, 24 and a heating element 29 are embedded between the insulating material layers. The metal layers 22 and 24 are made of a material having good ductility similar to that of the underlying substrate, and have a low overall thickness (less than 0.1 mm) and a small coverage area so as not to increase the thermal conductivity in the up-down direction. The thickness of the layers 21-27 of insulating material can be chosen as in the prior art to be 0.5-1mm or less, but the invention makes it possible, by means of the arrangement of the metal mesh layers 22, 24 between the different layers of insulating material, to prevent these layers of insulating material from cracking during temperature changes. In the prior art, if the thickness of the whole insulating material layer 21 exceeds 1mm, the relative displacement between the thickness of the whole insulating material layer 21 and the aluminum alloy base can cause the material layer 21 to crack, in the invention, the thickness of each insulating material layer is less than 1mm, and the thinner insulating material layers 21, 23, 25, 27 only cause the relative displacement with the base 10 and the grid- shaped metal layers 22, 24 which are directly combined with the thinner insulating material layers, so that each insulating material layer is not easy to crack, but the total thickness of the whole insulating material layers is far more than 1mm, and can reach about 3mm at most, and the thickness is enough to prevent a large amount of heat from being conducted downwards in the heating process. To prevent cracking, the thickness of each insulating- material layer 21, 23, 25, 27 can be chosen lower, for example 0.5mm smaller than 0.2mm, and by arranging more layers of metal-insulating-material layer units one above the other so that the overall insulating-material layer thickness below the heating element is greater than 1mm, effective insulation is achieved while preventing cracking of the insulating-material layers.
The overall thickness of the insulating material layer is increased, the uniformity of the overall thickness of the material layer is easier to control, and the total thickness error of the insulating material layer in the overall heater plane can be controlled to be less than 2% compared with the tolerance of 25um caused by the same processing technology, which brings additional benefit to the uniformity of the temperature of the substrate above. The arrangement of the grid-shaped metal layer can prevent the insulating material layer from cracking, and even if slight cracking occurs in a local area, the cracked parts are still pulled by the metal material and can not fall off because the insulating material is combined with the grid-shaped metal. Therefore, the substrate support table adopting the heater structure of the invention can obtain a thicker insulating material layer under the condition of preventing the heater from cracking.
The substrate support table with the structure is particularly effective for the process needing to obtain high-temperature treatment on the substrate, and the temperature difference between the substrate and the lower base in the high-temperature treatment process can be more than 50 ℃ and even can reach 100 ℃. The heater with better heat insulation effect provided by the invention can ensure that the heat generated in the heating element 29 mainly heats the electrostatic chuck and the substrate above the electrostatic chuck upwards, thereby not only having high temperature rise speed, reducing the process switching time and saving energy.
The grid- like metal layers 22, 24 of the present invention may also be metal disks, and the object of the present invention is also achieved by avoiding cracking of the insulating material layers. The insulating material layer in the present invention may be any insulating material made of organic polymer, such as PEEK, Vespel, Kapton, and the like, which are commercially available, in addition to the ceramic materials such as alumina and aluminum nitride, which are exemplified above, and any insulating material having low thermal conductivity can be applied to the present invention.
The present invention also provides a manufacturing process of the substrate supporting table, which comprises the following steps:
A. manufacturing an aluminum alloy base 10 with a cooling liquid circulation pipeline 11 by adopting a traditional machining process;
B. spraying insulating material particles on the substrate material to form an insulating material layer 21 with the thickness of about 0.5mm, and finishing the formation of the insulating material layer 21 after curing, wherein the spraying process can be arc spraying, plasma spraying or can also adopt chemical vapor deposition to form the insulating material layer except the spraying process, so that the formed insulating material layer is more compact and uniform;
C. forming the latticed metal layer 22 by spraying or directly paving a metal sheet;
D. repeating steps B-C to form material layers 23, 24, 25, respectively;
E. forming a heating element 29 on the layer of insulating material 25;
F. step B is performed again to form a layer of insulating material 27.
After the heater and the susceptor 10 are manufactured, an adhesive material layer such as silicone may be further coated on the upper surface of the insulating material layer, and the entire substrate supporting table is manufactured by placing the electrostatic chuck on the adhesive material layer. The number of times of repeatedly executing the B-C in the step D can be optimally set according to needs, and the more the number of times of repeatedly executing the B-C is, the more the number of layers of the overlapped insulating material layer and the latticed metal layer is, until the heat insulation effect required by the process is achieved. The manufacturing process of the present invention may also be to manufacture a heater specially made according to the present invention, and then adhere the heater to the upper surface of the lower base through an adhesive layer, wherein the manufacturing process of the heater is similar to the above-mentioned a-F, but the lower insulating material layer is manufactured directly on the base material, and first, various insulating material layers and metal layers are sequentially grown on the base material, then, the heating element and the upper insulating material layer are formed, and finally, the heater is detached from the base material and fixed on the prepared aluminum base.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A substrate support table comprising: the electrostatic chuck is arranged above the heater, and the heater is fixed on the upper surface of the base;
wherein the base includes a coolant flow channel therein; the heater comprises a heating element for generating heat, an upper insulating material layer positioned above the heating element and a lower insulating material layer positioned below the heating element, wherein the bottom surface of the lower insulating material layer is fixed on the upper surface of the base, and the heater is characterized in that:
the thickness of the lower insulating material layer is larger than 1mm, the lower insulating material layer comprises at least one metal layer which divides the lower insulating material layer into a plurality of insulating material sub-layers, and the thicknesses of the insulating material sub-layers are smaller than 1 mm.
2. The substrate support table of claim 1, wherein the plurality of sub-layers of insulating material are less than 0.5mm and greater than 0.2mm thick.
3. The substrate support table of claim 1, wherein the metal layer is in the form of a grid.
4. The substrate support table of claim 1, wherein the base is made of an aluminum alloy.
5. The substrate support table of claim 1, wherein the lower layer of insulating material comprises two metal layers separating the lower layer of insulating material into first, second, and third sublayers of insulating material.
6. The substrate support table of claim 1, wherein the layer of insulating material is made of a ceramic material comprising one of alumina, aluminum nitride, yttria.
7. The substrate support table of claim 1, wherein the insulating material is made of an organic material selected from one of PEEK, Vespel, Kapton.
8. The substrate support table of claim 1, wherein the electrostatic chuck is coupled to the upper insulating material layer on top of the heater by a layer of silicone.
9. A method of manufacturing a heater in a substrate support table as recited in claim 1, comprising the steps of:
A. forming an insulating material layer less than 1mm thick on a base material;
B. forming a grid-shaped metal layer on the insulating material layer;
C. forming an insulating material layer smaller than 1mm on the grid-shaped metal layer;
repeating the above steps B-C to form a lower insulating material layer,
the lower insulating material layer comprises alternating layers of insulating material and metal;
D. forming a heating element on the insulating material layer of the top layer;
E. an upper layer of insulating material is formed over the heating element.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012716.4A CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
| TW105135256A TWI640053B (en) | 2015-12-31 | 2016-10-31 | Substrate support table and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012716.4A CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106935529A CN106935529A (en) | 2017-07-07 |
| CN106935529B true CN106935529B (en) | 2020-03-24 |
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| CN201511012716.4A Active CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
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| CN (1) | CN106935529B (en) |
| TW (1) | TWI640053B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167344A (en) * | 2013-05-17 | 2014-11-26 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and base station thereof |
| TW201535588A (en) * | 2014-03-05 | 2015-09-16 | Applied Materials Inc | Pixelated capacitance controlled ESC |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5660753B2 (en) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High temperature cathode for plasma etching |
| JP5201527B2 (en) * | 2008-03-28 | 2013-06-05 | 東京エレクトロン株式会社 | Electrostatic chuck and manufacturing method thereof |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| CN103794445B (en) * | 2012-10-29 | 2016-03-16 | 中微半导体设备(上海)有限公司 | For electrostatic chuck assembly and the manufacture method of plasma process chamber |
| JP6182084B2 (en) * | 2013-03-25 | 2017-08-16 | 日本碍子株式会社 | Dense composite material, manufacturing method thereof, joined body, and member for semiconductor manufacturing apparatus |
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2015
- 2015-12-31 CN CN201511012716.4A patent/CN106935529B/en active Active
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- 2016-10-31 TW TW105135256A patent/TWI640053B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167344A (en) * | 2013-05-17 | 2014-11-26 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and base station thereof |
| TW201535588A (en) * | 2014-03-05 | 2015-09-16 | Applied Materials Inc | Pixelated capacitance controlled ESC |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201735214A (en) | 2017-10-01 |
| TWI640053B (en) | 2018-11-01 |
| CN106935529A (en) | 2017-07-07 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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