CN106935529A - A kind of substrate support platform and its manufacture method - Google Patents
A kind of substrate support platform and its manufacture method Download PDFInfo
- Publication number
- CN106935529A CN106935529A CN201511012716.4A CN201511012716A CN106935529A CN 106935529 A CN106935529 A CN 106935529A CN 201511012716 A CN201511012716 A CN 201511012716A CN 106935529 A CN106935529 A CN 106935529A
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- China
- Prior art keywords
- insulation material
- material layer
- heater
- support platform
- substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
A kind of substrate support platform, including：Electrostatic chuck, heater and pedestal, electrostatic chuck are installed to heater top, and heater is fixed to pedestal upper surface；Include coolant circulation duct in wherein described pedestal；The heater includes that heating element heater is used to produce heat, and also including the upper insulation material layer above heating element heater and the lower insulation material layer below heating element heater, the lower insulation material layer bottom surface is fixed to the pedestal upper surface, it is characterised in that：The lower insulation material layer thickness is more than 1mm, and lower insulation material layer includes that lower insulation material layer is divided into multiple insulating materials sublayers by an at least metal level.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of substrate support platform in plasma processor reaction chamber.
Background technology
Plasma processor is widely used in semi-conductor industry, for carrying out high-precision processing such as plasma etching, chemical vapor deposition to pending substrate（CVD）Deng.Plasma processor includes a reaction chamber, and there is reaction chamber inner bottom part a substrate support platform to be used for placing and fixing substrate.Supporting table also needs to carry out temperature control to substrate except fixed substrate, so be required to take away the heat produced in plasma treatment, while supporting table is also associated with radio-frequency power supply, by the treatment effect for adjusting the power output of radio-frequency power supply to adjust on substrate.So substrate support platform is core, multi-functional device in a plasma processor, the treatment effect to substrate is very significant considering that.
With the development of semi-conductor industry, increasing plasma treatment process is developed, each technique needs optimum temperature parameter different, often need to carry out a piece of substrate continuous multiple PROCESS FOR TREATMENT in same reaction chamber, need quickly to switch its corresponding optimum temperature in different processing steps.The need in order to realize quick changeable temperature, current mechanism is designed to structure as shown in Figure 1 in substrate support platform structure, including pedestal 10, the coolant duct 11 for coolant circulation is offered in pedestal 10 to take away heat, include heater on pedestal, the heater such as resistance wire 29 of the heating element heater by upper and lower two layers of insulation material 23,21 and between insulation material layer is constituted, and insulation material layer upper surface is combined fixation by layer of silica gel 32 with the electrostatic chuck 30 of top on heater.Wherein pedestal is generally made from a metal aluminium alloy such as and is made, and is electrically connected at least one radio-frequency power supply.Insulation material layer 21,23 is generally by ceramic material such as AL2O3, AlN, Y2O3Etc. being made.The power output of heating is then closed if necessary to cooling in temperature handoff procedure, heat is taken away by the coolant in the coolant duct of lower section with all strength, heater receives the electrical power big calorimetric of generation in temperature-rise period, and coolant is also required to circulate always take away the heat that top heater and processing procedure plasma and radio-frequency power supply are produced.So the heat that heater is produced in heating process substantial amounts of directly can be taken away by the pedestal 10 of lower section, not up to the substrate on electrostatic chuck 30.Also accelerate temperature-rise period, it is necessary to there is lower thermal conductivity between heating element heater 29 and lower section coolant duct 11, such as pedestal 10 is using the metal material titanium with more lower thermal conductivity to reduce this thermal losses（About 20W/m.k）Or cause that the insulation material layer 21 of the lower section of heating element heater 29 is thicker.But the two schemes are all problematic：Titanium material is prohibitively expensive, and its price exceeds 4 times of aluminum alloy materials (thermal conductivity factor 170W/m.k)；The thickness of insulation material layer 21 increases to during beyond 1mm thickness, and because the thermal expansion coefficient difference of lower section aluminium alloy and insulation material layer is excessive, insulation material layer 21 will fragmentation failure quickly during the change of frequently temperature.So the thickness of insulation material layer 21 is general all between 0.5-1mm in the prior art, the inhomogeneities that so small thickness also results in the insulation material layer thickness in whole plane is difficult control, because insulation material layer is typically spraying, surface roughness is very big, and common technology processes the tolerance to be formed can all bring insulation material layer in uneven thickness.When different parts insulation thickness difference reaches 25um for the thick material layers of 0.5mm, can to allow that the thickness difference between different zones reaches 5%, the substrate temperature above substrate support platform also can be impacted accordingly and be difficult to obtain homogeneous Temperature Distribution.So needing a kind of new method or apparatus to solve in substrate support platform in the industry, can quickly change the temperature of substrate, while also needing to cause the more uniform temperature of substrate.
The content of the invention
The problem that the present invention is solved is to provide a kind of substrate support platform to be included：Electrostatic chuck, heater and pedestal, electrostatic chuck are installed to heater top, and heater is fixed to pedestal upper surface；Include coolant circulation duct in wherein described pedestal；The heater includes that heating element heater is used to produce heat, and also including the upper insulation material layer above heating element heater and the lower insulation material layer below heating element heater, the lower insulation material layer bottom surface is fixed to the pedestal upper surface, it is characterised in that：The lower insulation material layer thickness is more than 1mm, and lower insulation material layer includes that lower insulation material layer is divided into multiple insulating materials sublayers by an at least metal level.Plurality of insulating materials molecular layers thick is less than 1mm, and to prevent insulation material layer from being ruptured in temperature changing process, preferably thickness insulation molecular layers thick is more than 0.2mm less than 0.5mm.
Metal level optimal selection wherein of the invention is latticed, and pedestal is made up of aluminium alloy.
Further, lower insulation material layer can include two metal layers, and lower insulation material layer is divided into first, second, third insulating materials sublayer.
Insulation material layer is made up of ceramic material or organic material in the present invention, and the ceramic material includes one of aluminum oxide, aluminium nitride, yittrium oxide, and the organic material is selected from one of PEEK, Vespel, Kapton.
The electrostatic chuck of substrate support platform of the present invention is connected by one layer of layer of silica gel with the upper insulation material layer at the top of heater.
Present invention simultaneously provides a kind of manufacture method of the heater for substrate support platform, including step：A. formed on base material and be approximately less than the thick insulation material layers of 1mm；B. grid-shaped metal layer is formed on insulation material layer；C. above-mentioned steps A-B is repeated to form lower insulation material layer, and the lower insulation material layer includes alternate insulation material layer and metal level, and wherein top layer is insulation material layer；D. heating element heater is formed on the insulation material layer of top layer;E. insulation material layer is formed on the heating element heater.
Brief description of the drawings
Fig. 1 is prior art substrate support platform schematic diagram；
Fig. 2 is substrate support platform schematic diagram of the present invention.
Specific embodiment
It is illustrated in figure 2 substrate support platform schematic diagram of the present invention, the present invention specific similar basic structure compared with the prior art shown in Fig. 1, the insulation material layer 21,23,25,27 including multilayer on substrate support platform 10 of the invention is differred primarily in that, also embedment has two stratiform metal levels 22,24 and heating element heater 29 above between these insulation material layers.Wherein metal level 22,24 material therefors are similar with lower section pedestal has preferable ductility, and integral thickness is very low（Less than 0.1mm）, area coverage is also small so the thermal conductivity coefficient of above-below direction will not be increased.The thickness of insulation material layer 21 ~ 27 can select 0.5-1mm or lower as prior art, but the present invention can cause that these insulation material layers will not rupture in temperature changing process by the setting of wire netting compartment 22,24 between different insulative material layer.If the whole thickness of insulation material layer 21 is more than 1mm in the prior art, the relative displacement occurred between whole 21 thickness and aluminium alloy pedestal will be made causes what material layer 21 ruptured, every layer of insulation material layer thickness is both less than 1mm in the present invention, these relatively thin insulation material layers 21, 23, 25, 27 pedestals 10 for all only directly combining, grid-shaped metal layer 22, 24 there is relative displacement, so each insulation material layer is not susceptible to rupture, but the thickness of the insulation material layer gross thickness of entirety but far super 1mm, maximum can reach about 3mm, this thickness has been enough to stop that amount of heat conducts downwards in heating process.In order to prevent rupture, it is lower that the thickness value of every layer of insulation material layer 21,23,25,27 can be selected, such as small 0.5mm is more than 0.2mm, it is stacked by the metal dielectric layer unit for setting more layers and causes that the integral insulation layer thickness below heating element heater, more than 1mm, avoids insulation material layer from rupturing while realizing effective heat-insulated.
After insulation material layer gross thickness increases, the uniformity of integral material thickness degree is more prone to control, the tolerance 25um that same processing technology is brought, it is relative to use the bigger thickness having after the present invention program, the overall error of thickness can be controlled below 2% on whole heater plane, and this uniformity to top substrate temperature brings extra benefit.The setting of grid-shaped metal layer is in addition to it can prevent insulation material layer from rupturing in the present invention, even if regional area there occurs slight cracking, because insulating materials is combined with grid-shaped metal so these parts split still can be held by metal material, will not fall off.So using the substrate support platform of heater structure of the present invention, thicker insulation material layer can be obtained in the case where preventing heater from rupturing.
The substrate support platform of structure of the present invention is especially effective for needing to obtain the technique that carries out high-temperature process to substrate, and the base-plate temp difference of substrate temperature and lower section is likely larger than 50 degree and possibly even reaches 100 degree during high-temperature processing technology.Because the more preferable heater of effect of heat insulation that the present invention is provided enables to the substrate above the main heating electrostatic chuck upward of heat produced in heating element heater 29 and electrostatic chuck, not only programming rate is fast, can reduce technique switching time, also energy saving.
Grid-shaped metal layer 22,24 can also be the disk of metal in the present invention, can equally realize the object of the invention, it is to avoid insulation material layer ruptures.Insulation material layer is except that can be that the ceramic materials such as the aluminum oxide, the aluminium nitride that above enumerate can also be insulating materials that organic polymer is made in the present invention, these organic insulations can be PEEK, Vespel, Kapton that in the market can be obtained etc., as long as the insulation and low material of thermal conductivity can be applied to the present invention.
Present invention also offers a kind of manufacturing process of substrate support platform, include in substrate support platform manufacturing process：
A. using tradition machinery processing technology aluminium alloy pedestal 10 of the manufacture with coolant circulation duct 11;
B. sprays insulating material particle is to forming the thick insulation material layers 21 of about 0.5mm on base material, the formation of insulation material layer 21 is completed after solidification, spraying coating process can be electric arc spraying, plasma spraying or except spraying coating process can also using chemical vapor deposition formed insulation material layer, so formation insulation material layer more dense uniform；
C. grid-shaped metal layer 22 is formed, formation process can be that spraying can also be direct laying sheet metal；
D. above-mentioned steps B-C is repeated to form material layer 23,24,25 respectively；
E. heating element heater 29 is formed on insulation material layer 25;
F. step B is performed again, forms insulation material layer 27.
Electrostatic chuck further in layer of adhesive material such as insulation material layer upper surface coating silica gel can be placed into the layer of adhesive material manufacture for completing whole substrate support platform after completing the manufacture of heater and pedestal 10.The number of times that B-C is repeated in above-mentioned steps D can Optimal Setting as needed, repeat number of times more at most insulation material layer and the overlapping number of plies of grid-shaped metal layer be more, until reaching the effect of heat insulation of technique needs untill.Manufacturing process of the present invention can also first fabricate the special heater of the present invention, heater is adhered to lower section pedestal upper surface by adhesive-layer again, wherein the manufacturing process of heater is similar with foregoing A-F, but lower insulation material layer is directly to start manufacture on base material, grow various insulation material layers and metal level successively first in substrate, then heating element heater and upper insulation material layer are formed, finally heater is departed from from base material and is fixed on pre-prepd aluminium base.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.
Claims (10)
1. a kind of substrate support platform, including：Electrostatic chuck, heater and pedestal, electrostatic chuck are installed to heater top, and heater is fixed to pedestal upper surface；
Include coolant circulation duct in wherein described pedestal；The heater includes that heating element heater is used to produce heat, and also including the upper insulation material layer above heating element heater and the lower insulation material layer below heating element heater, the lower insulation material layer bottom surface is fixed to the pedestal upper surface, it is characterised in that：
The lower insulation material layer thickness is more than 1mm, and lower insulation material layer includes that lower insulation material layer is divided into multiple insulating materials sublayers by an at least metal level.
2. substrate support platform as claimed in claim 1, it is characterised in that the multiple insulating materials molecular layers thick is less than 1mm.
3. substrate support platform as claimed in claim 2, it is characterised in that the multiple insulating materials molecular layers thick is more than 0.2mm less than 0.5mm.
4. substrate support platform as claimed in claim 1, it is characterised in that the metal level is latticed.
5. substrate support platform as claimed in claim 1, it is characterised in that the pedestal is made up of aluminium alloy.
6. substrate support platform as claimed in claim 1, it is characterised in that the lower insulation material layer includes two metal layers, and lower insulation material layer is divided into first, second, third insulating materials sublayer.
7. substrate support platform as claimed in claim 1, it is characterised in that the insulation material layer is made of ceramic materials, the ceramic material includes one of aluminum oxide, aluminium nitride, yittrium oxide.
8. substrate support platform as claimed in claim 1, it is characterised in that the insulating materials is made up of organic material, the organic material is selected from one of PEEK, Vespel, Kapton.
9. substrate support platform as claimed in claim 1, it is characterised in that the electrostatic chuck is connected by one layer of layer of silica gel with the upper insulation material layer at the top of heater.
10. in a kind of substrate support platform as claimed in claim 1 heater manufacture method, including step：
A. formed on base material and be approximately less than the thick insulation material layers of 1mm；
B. grid-shaped metal layer is formed on insulation material layer；
C. the insulation material layer less than 1mm is formed on grid-shaped metal layer；
Above-mentioned steps B-C is repeated to form lower insulation material layer,
The lower insulation material layer includes alternate insulation material layer and metal level；
D. heating element heater is formed on the insulation material layer of top layer;
E. upper insulation material layer is formed on the heating element.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012716.4A CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
| TW105135256A TWI640053B (en) | 2015-12-31 | 2016-10-31 | Substrate support table and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012716.4A CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106935529A true CN106935529A (en) | 2017-07-07 |
| CN106935529B CN106935529B (en) | 2020-03-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511012716.4A Active CN106935529B (en) | 2015-12-31 | 2015-12-31 | Substrate supporting table and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106935529B (en) |
| TW (1) | TWI640053B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009235536A (en) * | 2008-03-28 | 2009-10-15 | Tokyo Electron Ltd | Electrostatic chuck and manufacturing method thereof |
| US20140096909A1 (en) * | 2009-10-21 | 2014-04-10 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
| CN104167344A (en) * | 2013-05-17 | 2014-11-26 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and base station thereof |
| TW201535588A (en) * | 2014-03-05 | 2015-09-16 | Applied Materials Inc | Pixelated capacitance controlled ESC |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5660753B2 (en) * | 2007-07-13 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High temperature cathode for plasma etching |
| CN103794445B (en) * | 2012-10-29 | 2016-03-16 | 中微半导体设备(上海)有限公司 | For electrostatic chuck assembly and the manufacture method of plasma process chamber |
| JP6182084B2 (en) * | 2013-03-25 | 2017-08-16 | 日本碍子株式会社 | Dense composite material, manufacturing method thereof, joined body, and member for semiconductor manufacturing apparatus |
-
2015
- 2015-12-31 CN CN201511012716.4A patent/CN106935529B/en active Active
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2016
- 2016-10-31 TW TW105135256A patent/TWI640053B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009235536A (en) * | 2008-03-28 | 2009-10-15 | Tokyo Electron Ltd | Electrostatic chuck and manufacturing method thereof |
| US20140096909A1 (en) * | 2009-10-21 | 2014-04-10 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
| CN104167344A (en) * | 2013-05-17 | 2014-11-26 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and base station thereof |
| TW201535588A (en) * | 2014-03-05 | 2015-09-16 | Applied Materials Inc | Pixelated capacitance controlled ESC |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201735214A (en) | 2017-10-01 |
| CN106935529B (en) | 2020-03-24 |
| TWI640053B (en) | 2018-11-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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