CN106922042A - A kind of low-grade fever disk and its manufacture method - Google Patents
A kind of low-grade fever disk and its manufacture method Download PDFInfo
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- CN106922042A CN106922042A CN201710128204.7A CN201710128204A CN106922042A CN 106922042 A CN106922042 A CN 106922042A CN 201710128204 A CN201710128204 A CN 201710128204A CN 106922042 A CN106922042 A CN 106922042A
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- resistance heating
- insulation support
- heating layer
- support layer
- side edge
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/007—Heaters using a particular layout for the resistive material or resistive elements using multiple electrically connected resistive elements or resistive zones
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/009—Heaters using conductive material in contact with opposing surfaces of the resistive element or resistive layer
- H05B2203/01—Heaters comprising a particular structure with multiple layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
Abstract
The invention discloses a kind of low-grade fever disk and its manufacture method, belong to miniature heating dish technical field, it includes substrate, the first insulation support layer, resistance heating layer, the second insulation support layer, first insulation support layer is arranged on substrate, resistance heating layer is arranged on the first insulation support layer, second insulation support layer is arranged on the first insulation support layer, and is completely covered on resistance heating layer top, and opened hole is provided with one group of wire bonding area.First insulation support layer, resistance heating layer, the second insulation support layer form sandwich structure, and the sidewall definition of resistance heating layer has 1 60 ° of incline structures, and the sidewall definition of the resistance heating layer has and seamlessly transits appearance structure.The present invention provides a kind of low-grade fever dish structure and its manufacture method, overcomes not enough present in prior art, and it can bear operating temperature higher, and structural stress is small, and functional reliability is significantly improved, it is adaptable to which product is further minimized.
Description
Technical field
The present invention relates to miniature heating dish technical field, and in particular to a kind of low-grade fever dish structure with resistance heating layer and
Its manufacture method.
Background technology
Low-grade fever disk device is widely used in the product for need localized hyperthermia, including high temeperature chemistry sensor, very small chemical
Reactor, infrared light supply, flow sensor etc..
Low-grade fever disk realizes small size and low-power consumption by temperature isolation technology.The temperature isolation structure of low-grade fever disk can be
MEMS technology hangs film, overarm；Can also be the high porosity materials with lower thermal conductivity, such as anodised aluminium (AAO), porous silicon
(PS)；Can even is that the body material such as the sapphire with low thermal conductivity coefficient, yittrium oxide or quartz.
Widely used at present is the low-grade fever disk of MEMS technology, and the size of these products is mostly in 1-5mm2.Low-grade fever disk leads to
Cross resistance heating layer and be heated to hundreds of degrees Celsius, there is provided the temperature conditionss required for device work.
A kind of common low-grade fever disk application is in gas sensor.Change come sense gasses when using semiconductor resistor
During change in concentration, for semi-conducting material carries out the operating temperature that redox reaction provides 250 ~ 400 DEG C；Burnt when using catalysis
During formula operation principle, operating temperature is flammable to check by sensing the caused temperature change of catalysis burning between 400 ~ 800 DEG C
Gas concentration；When infrared light supply is launched in infrared type gas sensor, ultrared radiant power is 4 powers of temperature
Function, infrared radiation power high is conducive to improving signal to noise ratio, so as to be conducive to improving the sensitivity of gas detection, work temperature
Degree is general more than 500 DEG C.
In application described above, low-grade fever disk device is most important to device performance and reliability, it is important to design system
Producing can be operated in higher temperature, the low-grade fever disk with high reliability.
The structure of low-grade fever disk is mainly made up of the insulation support layer of resistance heating layer and its both sides, and the key for manufacturing and designing is
Suitable resistance heating layer material is selected, optimizes the conductive traces of resistance heating layer, and the insulating supporting for producing high intensity
Layer.
Current resistance heating layer material compared with frequently with have the low-expansion coefficient such as Pt noble metal, monocrystalline silicon, polysilicon, metal
Silicide etc., using hollow, annular, S types etc. more than conductive traces, uses silicon nitride, silica, nitrogen more insulating supporting layer material
Silica etc..The insulating supporting layer material for finding the resistance heating layer material with higher performance and higher intensity all compares
Difficult.
Meanwhile, in order to ensure that heat energy can effectively concentrate on low-grade fever disk working region, resistance heating layer is typically designed
It is the conductive traces with one fixed width, the shape of conductive traces can be optimized to realize temperature by finite element software
Uniformly, it is to avoid hot localised points.
It is also well known, with the raising of heating power, in order to ensure that resistance heating layer conductive traces can bear
Sufficiently large current strength, prevents from causing component failure because of electromigration, and heating resistor layer must have adequate thickness.But electricity
When resistance zone of heating thickness becomes big, the insulation support layer of resistance heating layer and both sides is because coefficient of thermal expansion mismatch is made during hot operation
Into stress will dramatically increase, may beyond the bearing the limit of film and cause rupture, so as to cause device because of insulation support layer
Rupture and fail.
Problem described above needs to make optimal design on the thickness of resistive layer, when the size of low-grade fever disk is larger,
Thicker temperature isolation insulation support layer can be designed to improve the high-temperature mechanical property of low-grade fever disk.But need smaller szie to produce
When product, the resistant heat generating layer electric current of the unit cross-sectional area of same operating temperature will increase, and corresponding is current density
Increase, in such a case it is necessary to suitably the thickness of increase resistant heat generating layer causes failure to prevent electromigration.But increase electricity
Pole thickness can cause the possibility increase that insulation support layer ruptures again.Highest work temperature when above mentioned problem result in device miniaturization
Degree can be reduced, and the reliability of device and life-span can decline.
The content of the invention
The present invention is directed to existing technical problem, there is provided a kind of low-grade fever disk device and its manufacture method, according to existing skill
Art schematic design making resistance heating layer, mainly there is stripping technology（Lift off）With Lithography Etching technique two schemes.When using stripping
Separating process（Lift off）When, the angle of inclination of side wall is between 70 ~ 90 °.When using Lithography Etching technique when, such as using it is each to
Anisotropic etch, the angle of inclination of side wall is between 70 ~ 90 °；When using isotropic etching, because etching is prolonged under there is mask
Stretch problem（Under Cut）, between 80 ~ 90 °, side edge circle has relatively more sharp profile at the angle of inclination of side wall.
Fig. 1 is a kind of common low-grade fever disk cross-sectional view of prior art manufacture, when low-grade fever disk is in high temperature
During work, the difference of thermal coefficient of expansion will cause deformation of thin membrane between resistance heating layer and insulation support layer, and resistance heating layer is steep
High and steep side wall profile causes region sharp on insulation support layer, and stress is assembled in the position with sharp profile, beyond material
That expects bearing the limit and causing rupture.In addition, precipitous sidewall definition can cause step coverage issue, subsequent deposition is caused
Insulation support layer it is thinning at sidewall locations, further reduce the rupture strength that insulation support layer can bear.
For in overcoming the shortcomings of prior art, the present invention is by using having 1 ~ 60 ° of incline structure, seamlessly transit shape
The sidewall definition of looks structure, can reduce may cause in structure the sharp profile of stress concentration, improve Step Coverage and ask
Topic, so as to improve the stress distribution of structure, significantly improves the temperature tolerance of device.
To achieve the above object, the present invention provides following technical scheme：A kind of low-grade fever disk, it is characterised in that it includes lining
Bottom, the first insulation support layer, resistance heating layer, the second insulation support layer, first insulation support layer are arranged on substrate, institute
State resistance heating layer to be arranged on the first insulation support layer, second insulation support layer is arranged on the first insulation support layer,
And resistance heating layer top is completely covered on, and through hole is opened up on second insulation support layer, the through hole is provided with one group and draws
Line bonding area, the side edge circle intermediate profile of the resistance heating layer has 1 ~ 60 ° of incline structure, the side of the resistance heating layer
Wall border top profile have seamlessly transit appearance structure.
Further, preferably, the backing material can be monocrystalline silicon, polysilicon, quartz, sapphire, yittrium oxide, many
Hole anodised aluminium（AAO）, porous silicon（PS）Deng.
The first insulating supporting layer material can be silicon nitride, silica, silicon oxynitride, quartz, sapphire, oxidation
Yttrium, porous anodic aluminium oxide（AAO）, porous silicon（PS）Deng.
The resistance heating layer material can be the low-expansion coefficient such as Pt, Ta, W, Ir, Ru, Ni noble metal and its alloy, mix
Miscellaneous monocrystalline silicon, DOPOS doped polycrystalline silicon, metal silicide etc..
The material of second insulation support layer 4 can be silicon nitride, silica, silicon oxynitride etc. and combinations thereof.
Further, preferably, the side edge circle intermediate profile of the resistance heating layer has 1 ~ 60 ° of linear bevelled junction
Structure or 1 ~ 60 ° of step-like incline structure, the side edge circle top profile of the resistance heating layer have and seamlessly transit appearance structure.
Additionally, the invention provides a kind of manufacture method of low-grade fever disk, it is characterised in that it is comprised the following steps：
1. deposits the first insulation support layer on substrate；
2. deposited resistive zones of heating on the first insulation support layer, form side edge circle intermediate profile with 1 ~ 60 ° of bevelled junction
Structure, side edge circle top profile have seamlessly transit appearance structure；
3. is deposited on the second insulation support layer on said structure surface, makes through hole by lithography, exposes the lead key of resistance heating layer
Close area；
4. carries out MEMS structure release, obtains temperature isolation structure.
Further, preferably, a kind of preparation method of the resistance heating layer can be using following any one stripping work
Skill：One kind is formed using stripping technology, by changing the sidewall definition pattern of photoresist layer, changes evaporation of metal, sputtering
The methods such as the angle of path and crystal column surface, obtain having 1 ~ 60 ° of side edge circle intermediate profile of linear incline structure（5）；
One kind is formed using stripping technology, by two or more times stripping technology, reduces the thickness of each deposition materials, follow-up heavy
Long-pending resistance heating layer conductive traces can take the methods such as expansion, diminution, shift mask, and being formed has 1 ~ 60 ° of step-like inclination
The side edge circle intermediate profile of structure；Another kind be after stripping technology, carved by appropriate isotropic etch back or（With）Change
Mechanical polishing treatment is learned, obtains that there is the side edge circle top profile for seamlessly transitting appearance structure（6）.
Further, preferably, a kind of preparation method of the resistance heating layer can use following any one shade work
Skill is formed：One kind is formed using shade technique, by increasing the interval between shade and wafer, changes evaporation of metal, sputtering
The methods such as the angle of path and crystal column surface, obtain having 1 ~ 60 ° of side edge circle intermediate profile of linear incline structure（5）；
One kind is formed using shade technique, by two or more times shade technique, reduces the thickness of each deposition materials, follow-up heavy
Long-pending resistance heating layer conductive traces can take expansion, diminution, shift mask method, and being formed has 1 ~ 60 ° of step-like bevelled junction
The side edge circle intermediate profile of structure（5）；Another kind be after shade technique, carved by appropriate isotropic etch back or（With）
Chemical mechanical polish process, obtains having the side edge circle top profile for seamlessly transitting appearance structure（6）.
Further, preferably, a kind of preparation method of the resistance heating layer can use following any one photoengraving
Carving technology is formed：One kind is formed using Lithography Etching technique, by the way that adjustment is vertical and lateral etch rate ratio, obtain with 1 ~
60 ° of side edge circle intermediate profiles of linear incline structure（5）；One kind is formed using Lithography Etching technique, by twice or
Lithography Etching technique, reduces the thickness of each deposition materials more times, and the resistance heating layer conductive traces of subsequent deposition can be taken
Expand mask mode, form the side edge circle intermediate profile with 1 ~ 60 ° of step-like incline structure（5）；Another kind is in photoetching
After etch process, increase appropriate isotropic etch back carve or（With）Chemical mechanical polish process, obtain have seamlessly transit shape
The side edge circle top profile of looks structure（6）.
The method have the advantages that：
1. the present invention provides a kind of low-grade fever dish structure and its manufacture method, overcomes not enough present in prior art, and it can
To bear operating temperature higher, structural stress is small, and functional reliability is significantly improved, it is adaptable to which product is further minimized.
2. the present invention is by changing the sidewall definition of resistance heating layer, it is to avoid using the larger spy of technology difficulty
Different resistance heating layer material, and avoid using the larger special insulation supporting layer material with high mechanical properties of technology difficulty
Material, process is simple is feasible, practical, low cost of manufacture.
3. the present invention is by changing the sidewall definition of resistance heating layer, can be worked temperature so as to improve device highest
Degree, improves the reliability of device and extends device operational lifetime.
Brief description of the drawings
Fig. 1 is prior art low-grade fever disk cross-sectional view.
Wherein：1st, substrate；2nd, the first insulation support layer；3rd, resistance heating layer；4th, the second insulation support layer；5th, side edge circle
Intermediate profile, tilt angle theta：70~90°；6th, the sharp transition pattern of sidewall definition；7th, insulation support layer upper stress is concentrated
Area.
Fig. 2 be the present invention have 1 ~ 60 ° of linear incline structure, seamlessly transit appearance structure sidewall definition it is micro-
Hot plate cross-sectional view.
Wherein：1st, substrate；2nd, the first insulation support layer；3rd, resistance heating layer；4th, the second insulation support layer；5th, linear side
Wall border intermediate profile, step spacing W, tilt angle theta：1~60°；6th, the transition pattern knot of side edge circle top contour smoothing
Structure.
Fig. 3 be the present invention have 1 ~ 60 ° of step-like incline structure, seamlessly transit appearance structure sidewall definition it is micro-
Hot plate cross-sectional view.
Wherein：1st, substrate；2nd, the first insulation support layer；3rd, resistance heating layer；4th, the second insulation support layer；5th, step-like side
Wall border intermediate profile, tilt angle theta：1~60°；6th, the transition appearance structure of side edge circle top contour smoothing.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 2-3 are referred to, the present invention provides a kind of technical scheme：
Embodiment one
As shown in Fig. 2 a kind of low-grade fever dish structure of the invention, it includes substrate 1, the first insulation support layer 2, resistance heating layer 3, the
Two insulation support layers 4, first insulation support layer 2 is set on substrate 1, and the resistance heating layer 3 is arranged on the first insulation
On supporting layer 2, second insulation support layer 4 is arranged on the first insulation support layer 2, and is completely covered on resistance heating layer 3
Top, and opened hole is provided with one group of wire bonding area.First insulation support layer 2, the insulation branch of resistance heating layer 3, second
Support layer 4 forms sandwich structure, and the side edge circle intermediate profile 5 of the resistance heating layer 3 has 30 ° of linear incline structures,
The side edge circle top profile 6 of the resistance heating layer 3 have seamlessly transit appearance structure.
Wherein, the material of the substrate 1 is monocrystalline silicon.The material of first insulation support layer 2 is silicon nitride.Described resistance
The material of zone of heating 3 is Pt.The material of second insulation support layer 4 is silicon nitride.
The following detailed description of the manufacture method of the low-grade fever disk of this structure, it is comprised the following steps：
1. .LPCVD deposits the first insulation support layer silicon nitride 500nm；
2. .Liftoff deposited resistives zone of heating Pt300nm, reduces the angle in evaporation of metal path and crystal column surface, is had
30 ° of sidewall definitions of linear incline structure；
3. wet methods Etchback100nm, during isotropic etching, raised position corrosion rate is fast, the position corrosion speed of depression
Rate is slow, obtains having the sidewall definition for seamlessly transitting appearance structure；
4. .LPCVD deposits the second insulation support layer silicon nitride 500nm, and photoetching opened hole exposes the lead of resistance heating layer 3
Bonding region；
5. the photoetching of the back sides, dry method ICP anisotropic etchings, discharge outstanding film.
Embodiment two：
As shown in figure 3, a kind of low-grade fever dish structure of the invention, it includes substrate 1, the first insulation support layer 2, resistance heating layer 3, the
Two insulation support layers 4, first insulation support layer 2 is set on substrate 1, and the resistance heating layer 3 is arranged on the first insulation
On supporting layer 2, second insulation support layer 4 is arranged on the first insulation support layer 2, and is completely covered on resistance heating layer 3
Top, and opened hole is provided with one group of wire bonding area.First insulation support layer 2, the insulation branch of resistance heating layer 3, second
Support layer 4 forms sandwich structure, and the side edge circle intermediate profile 5 of the resistance heating layer 3 has ~ 5 ° of step-like incline structures,
The side edge circle top profile 6 of the resistance heating layer 3 have seamlessly transit appearance structure.
Wherein, the material of the substrate 1 is monocrystalline silicon.The material of first insulation support layer 2 is silicon nitride.
The described material of resistance heating layer 3 is Pt.The material of second insulation support layer 4 is silicon nitride.
The following detailed description of the manufacture method of the low-grade fever disk of this structure, it is comprised the following steps：
1. .LPCVD deposits the first insulation support layer silicon nitride 500nm；
2. .Liftoff deposited resistives zone of heating Pt150nm；
3. is used and is reduced mask plate, again Liftoff deposited resistives zone of heating Pt150nm, the side edge circle interval for depositing twice
W is 2um；
4. wet methods Etchback100nm, during isotropic etching, raised position corrosion rate is fast, the position corrosion speed of depression
Rate is slow, obtains having the sidewall definition for seamlessly transitting appearance structure；
5. .LPCVD deposits the second insulation support layer silicon nitride 500nm, and photoetching opened hole exposes the lead of resistance heating layer 3
Bonding region；
6. the photoetching of the back sides, dry method ICP anisotropic etchings, discharge outstanding film.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding can carry out various changes, modification, replacement to these embodiments without departing from the principles and spirit of the present invention
And modification, the scope of the present invention be defined by the appended.
Claims (7)
1. a kind of low-grade fever disk, it is characterised in that it includes substrate（1）, the first insulation support layer（2）, resistance heating layer（3）,
Two insulation support layers（4）, first insulation support layer（2）It is arranged on substrate（1）On, the resistance heating layer（3）It is arranged on
First insulation support layer（2）On, second insulation support layer（4）It is arranged on the first insulation support layer（2）On, and be completely covered
In resistance heating layer（3）Top, second insulation support layer（4）On open up through hole, the through hole is provided with one group of lead key
Close area, the resistance heating layer（3）Side edge circle intermediate profile（5）With 1 ~ 60 ° of incline structure, the resistance heating layer
（3）Side edge circle top profile（6）With seamlessly transitting appearance structure.
2. a kind of low-grade fever disk according to claim 1, it is characterised in that the resistance heating layer（3）Side edge circle in
Between profile（5）With 1 ~ 60 ° of linear incline structure or 1 ~ 60 ° of step-like incline structure, the resistance heating layer（3）Side wall
Border top profile（6）With seamlessly transitting appearance structure.
3. a kind of low-grade fever disk according to claim 1 and 2, the backing material is monocrystalline silicon, polysilicon, quartz, Lan Bao
Stone, yittrium oxide, porous anodic aluminium oxide or porous silicon, the first insulating supporting layer material are silicon nitride, silica, nitrogen oxidation
Silicon, quartz, sapphire, yittrium oxide, porous anodic aluminium oxide or porous silicon, the resistance heating layer material are expensive low-expansion coefficients
One kind in Pt metal, Ta, W, Ir, Ru, Ni and its alloy, doped monocrystalline silicon, DOPOS doped polycrystalline silicon, metal silicide.
4. a kind of manufacture method for preparing the low-grade fever disk described in claim 1 or 2 or 3, it is characterised in that it includes following step
Suddenly：
1. deposits the first insulation support layer on substrate（2）；
2. is in the first insulation support layer（2）Upper deposited resistive zone of heating（3）, form side edge circle intermediate profile（5）With 1 ~
60 ° of incline structures, side edge circle top profile（6）With seamlessly transitting appearance structure；
3. deposits the second insulation support layer on said structure surface（4）On, make through hole by lithography, expose resistance heating layer（3）'s
Wire bonding area；
4. carries out MEMS structure release, obtains temperature isolation structure.
5. the manufacture method of low-grade fever disk according to claim 4, it is characterised in that prepared by one kind of the resistance heating layer
Method can use following any one stripping technology：One kind is formed using stripping technology, by the side edge for changing photoresist layer
Boundary's profile pattern, changes the methods such as the angle of evaporation of metal, sputtering path and crystal column surface, obtains linearly inclining with 1 ~ 60 °
The side edge circle intermediate profile of biassed fabric（5）；One kind is formed using stripping technology, by two or more times stripping technology,
The thickness of each deposition materials is reduced, the resistance heating layer conductive traces of subsequent deposition can take expansion, diminution, shift mask etc.
Method, forms the side edge circle intermediate profile with 1 ~ 60 ° of step-like incline structure；Another kind is after stripping technology, to pass through
Appropriate isotropic etch back carve or（With）Chemical mechanical polish process, obtains having side edge circle for seamlessly transitting appearance structure
Top profile（6）.
6. the manufacture method of low-grade fever disk according to claim 4, it is characterised in that prepared by one kind of the resistance heating layer
Method can be formed using following any one shade technique：One kind is formed using shade technique, by increasing shade and wafer
Between interval, change the methods such as evaporation of metal, the angle of sputtering path and crystal column surface, obtain linearly inclining with 1 ~ 60 °
The side edge circle intermediate profile of biassed fabric（5）；One kind is formed using shade technique, by two or more times shade technique,
The thickness of each deposition materials is reduced, the resistance heating layer conductive traces of subsequent deposition can take expansion, diminution, shift mask side
Method, forms the side edge circle intermediate profile with 1 ~ 60 ° of step-like incline structure（5）；Another kind is after shade technique, to pass through
Appropriate isotropic etch back carve or（With）Chemical mechanical polish process, obtains having side edge circle for seamlessly transitting appearance structure
Top profile（6）.
7. the manufacture method of low-grade fever disk according to claim 4, it is characterised in that prepared by one kind of the resistance heating layer
Method can be formed using following any one Lithography Etching technique：One kind is formed using Lithography Etching technique, is hung down by adjustment
Straight and lateral etch rate ratio, obtains having 1 ~ 60 ° of side edge circle intermediate profile of linear incline structure（5）；One kind is to adopt
Formed with photoengraving carving technology, by two or more times Lithography Etching technique, reduce the thickness of each deposition materials, it is follow-up heavy
Long-pending resistance heating layer conductive traces can take expansion mask mode, form the side edge with 1 ~ 60 ° of step-like incline structure
Boundary's intermediate profile（5）；Another kind be after Lithography Etching technique, increase appropriate isotropic etch back carve or（With）Chemical machinery
Polishing, obtains having the side edge circle top profile for seamlessly transitting appearance structure（6）.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108362740A (en) * | 2017-12-27 | 2018-08-03 | 武汉微纳传感技术有限公司 | A kind of metal-oxide semiconductor (MOS) gas sensor and preparation method thereof |
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| CN104108677A (en) * | 2014-07-18 | 2014-10-22 | 苏州能斯达电子科技有限公司 | MEMS (Micro-Electro-Mechanical System) silicon-based micro-heating plate and processing method thereof |
| CN104165902A (en) * | 2014-07-18 | 2014-11-26 | 苏州能斯达电子科技有限公司 | MEMS gas sensor with heat insulation groove and processing method thereof |
| CN105158297A (en) * | 2015-09-24 | 2015-12-16 | 雷鸣 | MEMS metal-oxide semiconductor gas sensor and manufacturing method thereof |
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| CN108362740A (en) * | 2017-12-27 | 2018-08-03 | 武汉微纳传感技术有限公司 | A kind of metal-oxide semiconductor (MOS) gas sensor and preparation method thereof |
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