CN106920845B - Superjunction semiconductor element - Google Patents
Superjunction semiconductor element Download PDFInfo
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- CN106920845B CN106920845B CN201510995559.7A CN201510995559A CN106920845B CN 106920845 B CN106920845 B CN 106920845B CN 201510995559 A CN201510995559 A CN 201510995559A CN 106920845 B CN106920845 B CN 106920845B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 230000007704 transition Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000926 separation method Methods 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 abstract description 38
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Abstract
A kind of superjunction semiconductor element comprising substrate, the drift layer being set on substrate, field insulating layer, floating electrode layer, separation layer and an at least transistor arrangement.Multiple N-shapeds and p-type doping column in drift layer are alternately arranged, and form super-junction structure.Drift layer defines element region, transition region and the terminator positioned at element region periphery, and transition region is between element region and terminator.Field insulating layer is set on the surface of drift layer, and covers terminator and section transitions area.Floating electrode layer is set on field insulating layer, and there is a part to be located in terminator.Transistor arrangement includes the source conductive layer that transition region is extended to by element region, and wherein source conductive layer extends to transition region by element region, and is electrically insulated by separation layer and floating electrode layer.Superjunction semiconductor element of the invention extends to the floating electrode layer in terminator by setting, can expand the field distribution range in terminator, to improve the breakdown voltage of superjunction semiconductor element entirety.
Description
Technical field
The present invention relates to a kind of semiconductor elements, and in particular to a kind of semiconductor element with super-junction structure.
Background technique
In mesohigh power semiconductor field, super-junction structure (Super Junction) has been widely adopted.
Superjunction transistor can maintain very high off state (off state) breakdown voltage (breakdown voltage, BV)
Meanwhile there is low conducting resistance (R ds-on).
Superjunction element contains the alternate P-type being formed in drift region and N-type doped column.In metal-oxide semiconductor (MOS)
Field-effect transistor (MOSFET) is when off state, and under relatively very low voltage, P-type and N-type doped column are in vertical current
Conducting direction forms exhaustion region (depletion region) completely, to reach charge balance (charge in drift region
Balance), and it is able to maintain that very high breakdown voltage.
Since in superjunction element, the increase of conducting resistance (Rds-on) is directly proportional to the increase of breakdown voltage (BV), than passing
The semiconductor structure of system increases slower.Therefore, compared to the metal oxide semiconductcor field effect for not having super-junction structure
Transistor (MOSFET), at identical breakdown voltage (BV), superjunction element has lower conducting resistance (Rds-on).Change speech
It, in specific conducting resistance (Rds-on) value, superjunction element has than traditional metal oxide semiconductcor field effect transistor
Higher breakdown voltage.
Disclose in the US publication case (20100230745 A1 of US), superjunction element would generally have active area with
And positioned at the terminator of active region.When superjunction element is in off state, the vertical direction and horizontal direction in terminator
All have field distribution.
Since terminator electric field in the horizontal direction is excessive, the breakdown voltage for also resulting in superjunction element is reduced.Therefore, eventually
Only area's length in the horizontal direction is 2 to 4 times of epitaxy layer thickness.However, if terminator length in the horizontal direction is too long,
The effective coverage ratio of superjunction element can be reduced, and conducting resistance can also increase accordingly.The case simultaneously proposes do not reducing superjunction element
Effective coverage ratio in the case where, terminator design ring protection layer (guard ring layer), to prevent superjunction element
Breakdown voltage reduce.However, ring protection layer has complicated pattern, also make the process complexity and degree of difficulty of superjunction element
It is substantially improved.
Summary of the invention
The present invention provides a kind of superjunction semiconductor element, by the way that floating electrode layer, expansible terminator is arranged in terminator
The range of interior field distribution provides breakdown voltage of the superjunction semiconductor element in off state.
Wherein an embodiment provides a kind of superjunction semiconductor element to the present invention comprising substrate, drift layer, field insulating layer,
Floating electrode layer, separation layer and an at least transistor arrangement.Drift layer is set on substrate, and is had in contrast to the one of substrate
Surface wherein forms multiple n-type doping columns and multiple p-type doping columns in drift layer, and multiple n-type doping columns are mixed with multiple p-types
Miscellaneous column is extended by surface towards the direction of substrate, and is alternately arranged, to form a super-junction structure.One element region of drift layer definition,
One transition region and a terminator, terminator is located at the periphery of element region, and transition region is between element region and terminator.Field is absolutely
Edge layer is set on the surface of drift layer, and covers terminator and section transitions area.Floating electrode layer is set to field insulating layer
On, wherein floating electrode layer is at least a part of is located in terminator.Separation layer is set on floating electrode layer.Transistor junction configuration
At in element region, wherein transistor arrangement includes an at least source conductive layer, and wherein source conductive layer is extended to by element region
Transition region, and be electrically insulated by separation layer and floating electrode layer.
In conclusion superjunction semiconductor element provided by the present invention, by the way that floating electrode layer is arranged in terminator, to expand
Field distribution range in big terminator, can be improved the breakdown voltage of superjunction semiconductor element entirety.Compared to the prior art and
Speech, the floating electrode layer structure of superjunction semiconductor element of the invention is simpler, and can be with the grid layer of element region in same work
It is completed in skill step.Accordingly, superjunction semiconductor element of the invention is not needed in terminator using complicated technique, to make
Floating electrode layer in terminator, that is, can reach increase terminator breakdown voltage the effect of.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, preferred embodiment is cited below particularly, and appended by cooperation
Attached drawing is described in detail below.
Detailed description of the invention
Figure 1A is painted the bottom view of the superjunction semiconductor element of the embodiment of the present invention.
Figure 1B is painted the diagrammatic cross-section of IB-IB along in Figure 1A.
Fig. 2 is painted the relational graph of the termination sector width and breakdown voltage of the embodiment of the present invention.
Fig. 3 is painted floating electrode layer and protrudes from the length of source conductive layer and terminate the ratio and breakdown potential between sector width
The graph of relation of pressure.
Wherein, the reference numerals are as follows:
Superjunction semiconductor element 1
Substrate 10
Upper surface 10a
Back side 10b
Drain contact pad 16
Drift layer 11
Surface 11a
Element region AR
Transition region T1
Terminator T2
N-type doping column 110n, 111n, 112n
P-type doping column 110p, 111p, 112p
First p-type doping column 112a
Second p-type doping column 112b
Third p-type doping column 112c
P-type well region 113
Terminate sector width W
Field insulating layer 12
Floating electrode layer 13
Separation layer 14
Transistor arrangement 15
Matrix area 150
Source area 151
Gate insulating layer 153
Grid layer 154
Dielectric layer 155
Source conductive layer 156
Contact doping area 152
First contact hole h1
Second contact hole h2
Source conductive layer end 156e
Floating electrode layer end 13e
Distance L
Specific embodiment
Figure 1A and Figure 1B are please referred to, wherein Figure 1A is painted the bottom view signal of the superjunction semiconductor element of the embodiment of the present invention
Figure, and Figure 1B is painted the diagrammatic cross-section of IB-IB along in Figure 1A.
The superjunction semiconductor element 1 of the embodiment of the present invention includes substrate 10, drift layer 11, field insulating layer 12, floating electrode
Layer 13, separation layer 14, at least a transistor arrangement 15 and drain contact pad 16.
In figure 1A, substrate 10 is semiconductor substrate, and has a upper surface 10a and one opposite with the upper surface 10a
Back side 10b.Substrate 10 has the first type conductive impurities of high concentration, and forms the first heavily doped region.First heavily doped region
It can be distributed in the regional area of substrate 100 or be distributed in entire substrate 10, to be used as drain contact layer.In this implementation
First heavily doped region of example is distributed across in entire substrate 10, but is only used for illustrating rather than to limit the present invention.Leakage above-mentioned
Pole engagement pad 16 is formed in the back side 10b of substrate 10, to be used to be electrically connected at external control circuit.
First type conductive impurities above-mentioned can be N-type or P-type conductivity impurity.Assuming that substrate 10 is silicon substrate, N-type
Conductive impurities are pentad ion, such as phosphonium ion or arsenic ion, and P-type conductivity impurity is triad ion, example
Such as boron ion, aluminium ion or gallium ion.
Drift layer (drift layer) 11 is located on the upper surface 10a of substrate 10, and the first type with low concentration is conductive
Property impurity.In the present embodiment, substrate 10 is the n-type doping (N of high concentration+), and drift layer 11 is then the n-type doping of low concentration
(N-).Drift layer 11 and have in contrast to substrate 10 surface 11a.
As shown in Figure 1A and Figure 1B, in the present embodiment, drift layer 11 is defined out an element region AR, a transition region
(transition region) T1 and one is located at terminator (termination area) T2 adjacent with active area AR.Into
For one step, terminator T2 is the periphery for being located at active area AR, and transition region T1 is between element region AR and terminator T2.
Figure 1B is please referred to, there is multiple n-type doping column 110n, 111n, 112n and multiple p-type doping columns in drift layer 11
110p,111p,112p.These n-type doping column 110n, 111n, 112n and p-type doping column 110p, 111p, 112p alternative expression
Side by side, to form super-junction structure.In addition, these n-type doping column 110n, 111n, 112n and p-type doping column 110p, 111p,
112p extends along current flowing direction, that is, is extended by the surface 11a of drift layer 11 towards the direction of substrate 10, and be distributed in
In element region AR, transition region T1 and terminator T2.
At superjunction semiconductor element 1 (On state) in the open state, these n-type doping columns 110n, 111n, 112n
And p-type doping column 110p, 111p, 112p can provide charge, and work as the (Off in an off state of superjunction semiconductor element 1
State), understand these n-type doping column 110n, 111n, 112n and p-type doping column 110p, 111p, 112p can in the horizontal direction by
Vague and general (or exhausting), to reach charge balance in drift layer 11.Therefore, superjunction semiconductor element 1 can be led in relatively low
It is powered under resistance, breakdown voltage with higher.
There is an at least p-type doping column 111p in transition region T1.In the embodiment shown in Figure 1B, have in transition region T1
There are three groups of p-type doping column 111p and n-type doping column 111n alternately arranged side by side.In addition, in the present embodiment, drift layer 11 is in transition
A p-type well region 113 adjacent to 11 surface 11a of drift layer is had more in area T1, and p-type well region 113 is connected to these p-type doping columns
Between 111p.In other words, p-type well region 113 is to be located at p-type doping column 111p close to the side of 11 surface 11a of drift layer.In transition
The quantity of p-type well region 113 in area T1 and position can be changed according to practical application request, and therefore, embodiment above-mentioned is not
To limit the scope of the invention.
It should be noted that the width W of terminator T2 in the horizontal direction also will affect the breakdown potential of superjunction semiconductor element 1
Pressure.Please also refer to Fig. 2, it is shown in the simulative relation figure of the width of terminator and breakdown voltage in superjunction semiconductor element.By Fig. 2
In as can be seen that when the width W of terminator T2 is less than 30 μm, the width of terminator T2 is affected to breakdown voltage.?
It is exactly as the width W of terminator T2 increases, the breakdown voltage of superjunction semiconductor element also will increase.When the width of terminator T2
When W is greater than 30 μm or more, even if the width W of terminator T2 continues to increase, the amplitude that breakdown voltage continues to increase is not obvious.
Therefore, in one embodiment, the width of terminator T2 ranges approximately between 30 μm to 70 μm, makes superjunction semiconductor element
The breakdown voltage of part 1 can be greater than 650V.In the embodiment shown in Figure 1B, at least there are three groups of p-type doping columns in the T2 of terminator
112p and n-type doping column 112n.In a further preferred embodiment, at least there are five groups of p-type doping columns 112p and n in the T2 of terminator
Type doped column 112n.
There is the direction from close to transition region T1 toward far from transition region T1 in the embodiment shown in Figure 1B, in the T2 of terminator
The first p-type doping column 112a, the second p-type doping column 112b and third p-type doping column 112c of sequential.And it is any two adjacent
The first p-type doping column 112a and the second p-type doping column 112b (and the second p-type doping column and third p-type doping column 112c) it
Between, it is that a preset distance is spaced each other by n-type doping column 112n.
It should be noted that transition region T1 and terminator T2 formed multiple groups N-shaped and p-type doping column 111n, 111p, 112n,
112p can extend the distribution of electric field between multiple groups N-shaped and p-type doping column 111n, 111p, 112n, 112p, super to be promoted
The whole breakdown voltage of junction semiconductor element 1.
In addition, when forming the super-junction structure of aforementioned drift layer 11, it can be first by the lightly-doped layer shape with the first conductive type
At in the upper surface 11a of substrate 10.And then multiple grooves perpendicular to surface 11a are formed in drift layer 11, then at groove
It is middle filling the second conductive type semiconductor layer and form multiple n-type doping column 110n, 111n, 112n and multiple p-type doping columns
110p、111p、112p。
Field insulating layer 12 is set on the surface 11a of drift layer 11, and covers terminator T2 and section transitions area T1.It is floating
Receiving electrode layer 13 is set on field insulating layer 12, and is extended in the T2 of terminator by transition region T1.Separation layer 14 be set to it is floating
On receiving electrode layer 13.That is, floating electrode layer 13 is folded between separation layer 14 and field insulating layer 12.Implement one
In example, field insulating layer 12 and separation layer 14 are all oxide layer.
In the present embodiment, the part field insulating layer 12 in transition region T1, part floating electrode layer 13 and part
Separation layer 14 is overlapped in two groups of p-type doping column 111p and n-type doping column in transition region T1 near terminator T2
On 111n.
In addition, the part floating electrode layer 13 and part separation layer 14 that are located in the T2 of terminator are overlapped in first
On the p-type doping column 112a and n-type doping column 112n adjacent with the first p-type doping column 112a.It should be noted that being surveyed through simulation
Examination, as the result is shown floating electrode layer 13 be arranged position and extend terminator T2 in length, all will affect superjunction semiconductor
The breakdown voltage of element 1.Floating electrode layer 13 extends to the length of terminator T2, and the breakdown to superjunction semiconductor element 1
The influence of voltage will be in being explained below.
Multiple transistor arrangements 15 are located in element region AR, and including matrix area 150, source area 151, gate insulating layer
153, grid layer 154, dielectric layer 155 and source conductive layer 156.
Matrix area 150 has the conductivity type opposite with substrate 10 and drift layer 11.For example, substrate 10 and drift layer
11 be n-type doping, then matrix area 150 is p-type doping.Also, each matrix area 150 is that connection is every in element region AR
One p-type doping column 110p.Specifically, matrix area 150 is connected to p-type doping column 110p close to 11 surface 11a's of drift layer
One end.
At least source region 151 is formed in each matrix area 150, and source area 151 has and matrix area 150 is opposite
Conductivity type, and with drift layer 11 and the conductivity type having the same of substrate 10.In embodiment depicted in Figure 1B, each base
Source area 151 there are two being set in body area 150.Source area 151 simultaneously passes through the n-type doping column in matrix area 150 and element region AR
110n is mutually isolated.
In the present embodiment, each transistor arrangement 15 further includes a contact doping area 152, has and 151 phase of source area
Anti- conductivity type.For example, in the embodiment of Figure 1B.Source area 151 is N-shaped heavily doped region, and contact doping area 152 is
P-type heavily doped region.Contact doping area 152 is between two source areas 151 in same matrix area 150.
Gate insulating layer 153 and grid layer 154 are all set on the surface 11a of drift layer 11, and grid layer 154 passes through grid
Pole insulating layer 153 and drift layer 11 are electrically insulated.Furthermore, in the present embodiment, grid layer 154 corresponds to element region
The position of n-type doping column 110n in AR is arranged on gate insulating layer 153.In addition, grid layer 154 and be located at matrix area 150
Interior source area 151 partly overlaps.
Dielectric layer 155 is covered on grid layer 154, and have multiple first contact hole h1 (2 are painted in Figure 1B) and
Second contact hole h2 (is painted 1) in Figure 1B.Multiple first contact hole h1 are the positions for corresponding respectively to contact doping area 152,
And the second contact hole h2 corresponds to the position of the p-type well region 113 in transition region T1.That is, being led not yet forming source electrode
Before electric layer 156, part contact doping area 152 and part source area 151 can be exposed to drift by the first contact hole h1
On the surface 11a of layer 11, and part of p-type well region 113 can be exposed to the surface 11a of drift layer 11 by the second contact hole h2
On.
Source conductive layer 156 is covered on dielectric layer 155, and is extended in transition region T1 by element region AR.Source conductive
Floor 156 is electrically connected by the first contact hole h1 and each source area 151 and each contact doping area 152.In addition,
Source conductive layer 156 contacts the surface of drift layer 11, and and the p-type well region in transition region T1 by the second contact hole h2
113 are electrically connected.
It should be noted that extending to the part source conductive layer 156 of transition region T1 can be covered on separation layer 14, and and floating
Receiving electrode layer 13 partly overlaps.However, source conductive layer 156 is not contacted with floating electrode layer 13, but pass through separation layer 14
It is electrically insulated with floating electrode layer 13.
Source conductive layer 156 extends to transition region T1 and is more than p-type well region 113.Specifically, source conductive layer 156
End 156e is close to the boundary of transition region T1 and terminator T2.In the present embodiment, where the end 156e of source conductive layer 156
Vertical plane be between the first p-type doping column 112a in p-type doping column 111p and terminator T2 in the transition region T1.
In one embodiment, source conductive layer 156 can be selected from by titanium, platinum, tungsten, nickel, chromium, molybdenum, tin and its metal silicide
Composed group is one such.
As shown in Figure 1B, part floating electrode layer 13 is not overlapped with source conductive layer 156, and is located in the T2 of terminator.
Therefore, by the distance L of the end 13e of the end 156e of source conductive layer 156 to floating electrode layer 13, as floating electrode layer 13
Protrude from the length of source conductive layer 156.
It should be noted that when superjunction semiconductor element 1 be applied reverse biased and it is in an off state when, due to suspension joint electricity
Pole layer 13 can intercouple with the voltage of source conductive layer 156, and can expand the range of the field distribution in the T2 of terminator, thus
Increase the breakdown voltage of superjunction semiconductor element 1.
If the end 13e of floating electrode layer 13 is too near to transition region T1, the extended range of electric field is too small, can not be effectively
Promote the breakdown voltage of superjunction semiconductor element 1.
In addition, the electric field strength in the T2 of terminator close to the region of the end 13e of floating electrode layer 13 also can be because of suspension joint electricity
Pole layer 13 and the voltage coupling effect of source conductive layer 156 and enhance.Therefore, if the end 13e of floating electrode layer 13 is too deep
Terminator T2, that is, floating electrode layer 13 boundary of the end 13e apart from terminator T2 and transition region T1 it is too far when, work as superjunction
Semiconductor element in operation, is easy to hit the terminator T2 below the end 13e of floating electrode layer 13 instead
It wears, to reduce the pressure-resistant degree of superjunction semiconductor element.
Accordingly, in one embodiment, the vertical plane where the end 13e of floating electrode layer 13 is to be located at the first p-type to mix
It between miscellaneous column 112a and the second p-type doping column 112b, can avoid breakdown in terminator T2, and superjunction semiconductor element can be improved
Breakdown voltage.
Referring to figure 3..Fig. 3 shows that floating electrode layer protrudes from the length L of source conductive layer and terminates between sector width W
The graph of relation of the breakdown voltage of ratio (L/W) and superjunction semiconductor element.In the fig. 3 embodiment, being in terminator T2
About 33 μm of width under conditions of, simulate in different ratio, the breakdown voltage of superjunction semiconductor element.
As shown in figure 3, as ratio increases, that is, length L of the floating electrode layer 13 in the T2 of terminator bigger, superjunction
The breakdown voltage of semiconductor element also increases accordingly.When ratio is greater than 0.3, effectively breakdown voltage can be increased to exceed
660V.However, when ratio is more than 0.75, and breakdown voltage can be made to drop to 600V or less.Even when ratio is greater than 0.95,
Breakdown voltage can be made to be decreased below 550V, and in the T2 of terminator punch-through can occur for superjunction semiconductor element.
When the width W of terminator T2 increases, the peak value of curve can also deviate (shift) to the left.It therefore, can be according to superjunction
Field applied by semiconductor element and the voltage being subjected to, to design the length L that floating electrode layer 13 is located at terminator T2
And the width W of terminator T2.
For example, floating electrode layer 13 protrudes from the ratio of the width W of the length L and terminator T2 of source conductive layer 156
Value (L/W) between 0.1 to 0.8, can make the breakdown voltage of superjunction semiconductor element that can be greater than 660V, ratio size above-mentioned
Can according to terminator T2 width W and determine.
In addition, it should be noted that, when the not set floating electrode layer 13 of superjunction semiconductor element, the thickness of field insulating layer 12
At least 2.5 μm are needed, is just avoided that the electric field strength in the T2 of terminator is too strong and breakdown.But setting floating electrode layer 13 it
Afterwards, the thickness of field insulating layer 12 can reduce at least half.In embodiments of the present invention, the thickness of field insulating layer 12 can be between
Between 0.6 μm to 2.0 μm.
In one embodiment, when manufacturing the superjunction semiconductor element 1 of the embodiment of the present invention, floating electrode layer 13 and element
The grid layer 154 of area AR can be synchronously completed via depositing operation and etch process.Accordingly, floating electrode layer 13 and grid
Layer 154 is by identical material, such as: polysilicon is constituted, and has roughly the same thickness.Similarly, separation layer 14 can and element
The dielectric layer 155 of area AR is synchronously completed via depositing operation and etch process.Therefore, the material of separation layer 14 and dielectric layer 155
Expect it is identical, and have roughly the same thickness.
In conclusion superjunction semiconductor element provided by the present invention, by the way that the suspension joint extended in terminator electricity is arranged
Pole layer, can expand the field distribution range in terminator, to improve the breakdown voltage of superjunction semiconductor element entirety.Compared to
For the prior art, the floating electrode layer structure of superjunction semiconductor element of the invention is simpler, but still can reach raising breakdown
The effect of voltage.
Further, since floating electrode layer and grid layer can synchronize formed, therefore in the superjunction of the production embodiment of the present invention half
When conductor element, do not need additionally to increase other processing steps newly again.Therefore, the superjunction semiconductor element of the embodiment of the present invention
Technique is more simple compared to for prior art.
Although the embodiment of the present invention has been disclosed as above, the right present invention is not limited to above-described embodiment, any affiliated skill
Art has usually intellectual in field, is not departing from range disclosed in this invention, when can make a little change and adjustment, because
This protection scope of the present invention should be subject to appended as defined in claim.
Claims (11)
1. a kind of superjunction semiconductor element, which is characterized in that the superjunction semiconductor element includes:
One substrate；
One drift layer is set on the substrate, and has the surface in contrast to the substrate, wherein shape in the drift layer
At multiple n-type doping columns and multiple p-type doping columns, and multiple n-type doping columns and multiple p-type doping columns are by the table
The direction for facing the substrate extends, and is alternately arranged, to form a super-junction structure, wherein the drift layer defines an element
Area, a transition region and a terminator, the terminator is located at the periphery of the element region, and the transition region is located at the element
Between area and the terminator；
One field insulating layer is set on the surface, and covers the terminator and the part transition region；
One floating electrode layer, is set on the field insulating layer, wherein floating electrode layer at least part is located at the end
Only in area；
One separation layer is set on the floating electrode layer；And
An at least transistor arrangement is formed in the element region, wherein the transistor arrangement includes an at least source conductive
Layer, wherein the source conductive layer extends to the transition region by the element region, and partly overlaps with the floating electrode layer,
And the source conductive layer is electrically insulated by the separation layer and the floating electrode layer.
2. superjunction semiconductor element as described in claim 1, wherein the floating electrode layer extends to institute by the transition region
It states in terminator, the floating electrode layer is located at part in the terminator and the source conductive layer is not be overlapped and described
Another part that floating electrode layer is located in the transition region is Chong Die with the source conductive layer.
3. superjunction semiconductor element as described in claim 1, wherein the drift layer in the terminator at least have from
One first p-type doping column, the one second p-type doping column and one arranged close to the transition region toward the direction far from the transition region
Third p-type doping column.
4. superjunction semiconductor element as claimed in claim 3, wherein the vertical plane where the end of the floating electrode layer
Between the first p-type doping column and the second p-type doping column.
5. superjunction semiconductor element as described in claim 1, wherein the end of the source conductive layer is close to the transition region
With a boundary of the terminator.
6. superjunction semiconductor element as described in claim 1, wherein the drift layer in the transition region have at least one
A p-type doping column and a p-type well region, the p-type well region are connected at least one described p-type doping column close to the surface
One end.
7. superjunction semiconductor element as claimed in claim 6, wherein the source conductive being partially located in the transition region
Layer directly contacts the surface, and is electrically connected the p-type well region.
8. superjunction semiconductor element as described in claim 1, wherein the thickness of the field insulating layer is between 0.6 μm to 2.0 μm
Between.
9. superjunction semiconductor element as described in claim 1, wherein the transistor arrangement further include:
One matrix area, connection are located at one of them described p-type doping column in the element region；
At least source region is formed in described matrix area, wherein the source area has the conduction opposite with described matrix area
Type, and it is mutually isolated by described matrix area and the n-type doping column；
One gate insulating layer is set on the surface；
One grid layer, the position corresponding to the n-type doping column is to be set on the gate insulating layer, wherein the grid layer
It partially overlaps on the source area in described matrix area；And
One dielectric layer is set on the grid layer, and has an at least contact hole, wherein the source conductive layer is covered in institute
It gives an account of in electric layer, to be electrically insulated with the grid layer, and the source conductive layer passes through the contact hole and the source area
It is electrically connected.
10. superjunction semiconductor element as claimed in claim 9, wherein the grid layer has phase with the floating electrode layer
Same thickness, and the dielectric layer and separation layer thickness having the same.
11. superjunction semiconductor element as described in claim 1, wherein length of the floating electrode layer in the terminator
The ratio of degree and the width of the terminator is between 0.1 to 0.8.
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|---|---|---|---|---|
| CN101868856A (en) * | 2007-09-21 | 2010-10-20 | 飞兆半导体公司 | Superjunction structures for power devices and methods of manufacture |
| CN102214689A (en) * | 2010-04-06 | 2011-10-12 | 上海华虹Nec电子有限公司 | Terminal protection structure of super junction device and manufacturing method of terminal protection structure |
| CN103996702A (en) * | 2014-05-26 | 2014-08-20 | 电子科技大学 | Terminal structure for improving avalanche tolerance of super junction power device |
| CN103077970B (en) * | 2011-10-26 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | Super-junction device and manufacture method thereof |
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| JP5606019B2 (en) * | 2009-07-21 | 2014-10-15 | 株式会社東芝 | Power semiconductor device and manufacturing method thereof |
| JP5629994B2 (en) * | 2009-09-04 | 2014-11-26 | ソニー株式会社 | Semiconductor device and manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101868856A (en) * | 2007-09-21 | 2010-10-20 | 飞兆半导体公司 | Superjunction structures for power devices and methods of manufacture |
| CN102214689A (en) * | 2010-04-06 | 2011-10-12 | 上海华虹Nec电子有限公司 | Terminal protection structure of super junction device and manufacturing method of terminal protection structure |
| CN103077970B (en) * | 2011-10-26 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | Super-junction device and manufacture method thereof |
| CN103996702A (en) * | 2014-05-26 | 2014-08-20 | 电子科技大学 | Terminal structure for improving avalanche tolerance of super junction power device |
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