CN106910713B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN106910713B
CN106910713B CN201510969841.8A CN201510969841A CN106910713B CN 106910713 B CN106910713 B CN 106910713B CN 201510969841 A CN201510969841 A CN 201510969841A CN 106910713 B CN106910713 B CN 106910713B
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semiconductor fin
gate structure
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CN106910713A (zh
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李勇
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Beijing Corp
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Abstract

本发明公开了一种半导体装置及其制造方法，涉及半导体技术领域。其中，所述方法包括：提供半导体衬底；在所述衬底上形成金刚石膜；对所述金刚石膜进行刻蚀，以形成延伸到所述衬底的沟槽；在形成的沟槽中的衬底上外延生长半导体材料，以形成半导体鳍片；去除金刚石膜的一部分以露出所述半导体鳍片的上部。本公开能够改善器件的自热效应。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体技术领域，尤其涉及一种半导体装置及其制造方法。
背景技术
随着器件尺寸的缩小，鳍式场效应晶体管(Fin Field Effect Transistor，FinFET)由于具有良好的栅控制能力而得到了广泛应用。然而，与平面器件晶体管相比，FinFET的三维结构比较复杂，自热效应(self-heating effect)严重，散热较差，从而影响器件的稳定性。
发明内容
本公开的一个实施例的目的在于提出一种新颖的半导体装置及其制造方法，改善器件的自热效应和散热，和/或提高器件的稳定性。
根据本公开的一个实施例，提供了一种半导体装置的制造方法，包括：提供半导体衬底；在所述衬底上形成金刚石膜；对所述金刚石膜进行刻蚀，以形成延伸到所述衬底的沟槽；在形成的沟槽中的衬底上外延生长半导体材料，以形成半导体鳍片；去除金刚石膜的一部分以露出所述半导体鳍片的上部。
在一个实施方式中，所述沟槽包括第一沟槽和第二沟槽；所述半导体鳍片包括：在所述第一沟槽中的第一半导体鳍片，所述第一半导体鳍片用于形成N型半导体器件；以及在所述第二沟槽中的第二半导体鳍片，所述第二半导体鳍片用于形成P型半导体器件。
在一个实施方式中，所述方法还包括：在所述半导体鳍片上形成第一栅极结构，所述第一栅极结构包括包绕在所露出的半导体鳍片的一部分上的第一栅极介质层和在所述第一栅极介质层上的第一栅极。
在一个实施方式中，所述方法还包括：形成用于所述第一栅极结构的间隔物，所述间隔物还覆盖所述半导体鳍片的未被所述第一栅极结构覆盖的部分的侧壁。
在一个实施方式中，所述方法还包括：在所述第一栅极结构两侧的半导体鳍片的上表面外延生长半导体材料以形成抬升的有源区。
在一个实施方式中，所述半导体鳍片包括第一半导体鳍片和第二半导体鳍片；所述方法还包括：在第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的上表面和侧面形成牺牲层；在第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的侧面形成的牺牲层上形成间隔物；去除第一栅极结构两侧的第一半导体鳍片的上表面的牺牲层；在露出的第一栅极结构两侧的第一半导体鳍片的上表面外延生长半导体材料以形成抬升的有源区；去除第一栅极结构两侧的第二半导体鳍片的上表面的牺牲层；在露出的第一栅极结构两侧的第二半导体鳍片的上表面外延生长半导体材料以形成抬升的有源区。
在一个实施方式中，所述方法还包括：形成层间介质层以覆盖所述第一栅极结构、露出的金刚石膜以及抬升的有源区；对所述层间介质层进行平坦化，以露出所述第一栅极结构的上表面；去除所述第一栅极结构以形成凹陷，从而露出所述半导体鳍片的一部分；在所述半导体鳍片的露出部分的表面上形成第二栅极结构。
在一个实施方式中，所述方法还包括：形成层间介质层以覆盖所述第一栅极结构、露出的金刚石膜以及所述半导体鳍片；对所述层间介质层进行平坦化，以露出所述第一栅极结构的上表面；去除所述第一栅极结构以形成凹陷，从而露出所述半导体鳍片的一部分；在所述半导体鳍片的露出部分的表面上形成第二栅极结构。
在一个实施方式中，所述半导体鳍片包括第一半导体鳍片和第二半导体鳍片，所述凹陷包括分别与第一半导体鳍片和第二半导体鳍片对应的第一凹陷和第二凹陷，所述第一半导体鳍片用于形成N型半导体器件，所述第二半导体鳍片用于形成P型半导体器件。
在一个实施方式中，所述形成第二栅极结构包括：在所述凹陷中，在所述半导体鳍片的露出部分的表面上形成界面层；在所述界面层上依次形成第二栅极介质层和功函数调节层；在所述功函数调节层上沉积第二栅极材料，以填充与所述凹陷。
在一个实施方式中，所述半导体鳍片包括第一部分和位于第一部分上的第二部分；所述第一部分的平均掺杂浓度高于所述第二部分的平均掺杂浓度。
在一个实施方式中，所述第二部分为本征半导体材料。
在一个实施方式中，所述半导体鳍片的掺杂浓度由底部向顶部逐渐减小。
根据本公开的另一个实施例，提供了一种半导体装置，包括：半导体衬底；位于所述衬底上的半导体鳍片；位于半导体鳍片两侧且覆盖半导体鳍片的下部的金刚石膜。
在一个实施方式中，所述装置还包括：在所述半导体鳍片上的第一栅极结构，所述第一栅极结构包括包绕在所述半导体鳍片的一部分上的第一栅极介质层和在所述第一栅极介质层上的第一栅极。
在一个实施方式中，所述装置还包括：用于所述第一栅极结构的间隔物，所述间隔物还覆盖所述半导体鳍片的未被所述第一栅极结构覆盖的部分的侧壁。
在一个实施方式中，所述装置还包括：在所述第一栅极结构两侧的半导体鳍片的上表面形成的抬升的有源区。
在一个实施方式中，所述半导体鳍片包括第一半导体鳍片和第二半导体鳍片，所述第一半导体鳍片用于形成N型半导体器件，所述第二半导体鳍片用于形成P型半导体器件。
在一个实施方式中，所述装置还包括：在所述半导体鳍片上的第二栅极结构，所述第二栅极结构包括在所述半导体鳍片的一部分上的界面层，在所述界面层上的第二栅极介质层，在所述第二栅极介质层上的功函数调节层、以及在所述功函数调节层上的第二栅极。
在一个实施方式中，所述半导体鳍片包括第一部分和位于第一部分上的第二部分；所述第一部分的平均掺杂浓度高于所述第二部分的平均掺杂浓度。
在一个实施方式中，所述第二部分为本征半导体材料。
在一个实施方式中，所述半导体鳍片的掺杂浓度由底部向顶部逐渐减小。
通过以下参照附图对本公开的示例性实施例的详细描述，本公开的其它特征、方面及其优点将会变得清楚。
附图说明
附图构成本说明书的一部分，其描述了本公开的示例性实施例，并且连同说明书一起用于解释本发明的原理，在附图中：
图1是根据本公开一个实施例的半导体装置的制造方法的简化流程图；
图2示出了根据本公开一个实施例的在衬底上形成金刚石膜的示意截面图；
图3示出了根据本公开一个实施例的对金刚石膜进行刻蚀形成沟槽的示意截面图；
图4示出了根据本公开一个实施例的形成半导体鳍片的示意截面图；
图5示出了根据本公开一个实施例的形成半导体鳍片的示意截面图；
图6示出了根据本公开另一个实施例的形成第一栅极结构的示意截面图；
图7示出了根据本公开另一个实施例的形成间隔物的沿着半导体鳍片的未被第一栅极结构覆盖的部分的截面图；
图8示出了根据本公开另一个实施例的外延形成有源区的示意截面图；
图9示出了根据本公开另一个实施例的形成层间介质层的示意截面图；
图10示出了根据本公开另一个实施例的去除第一栅极结构形成凹陷的示意截面图；
图11示出了根据本公开另一个实施例的形成第二栅极结构的示意截面图。
具体实施方式
现在将参照附图来详细描述本公开的各种示例性实施例。应理解，除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不应被理解为对本发明范围的限制。
此外，应当理解，为了便于描述，附图中所示出的各个部件的尺寸并不必然按照实际的比例关系绘制，例如某些层的厚度或宽度可以相对于其他层有所夸大。
以下对示例性实施例的描述仅仅是说明性的，在任何意义上都不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和装置可能不作详细讨论，但在适用这些技术、方法和装置情况下，这些技术、方法和装置应当被视为本说明书的一部分。
应注意，相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义或说明，则在随后的附图的说明中将不需要对其进行进一步讨论。
本公开的发明人针对FinFET自热效应严重的问题进行了研究，发现现有的FinFET中鳍片之间是通过氧化物进行隔离的，而氧化物的热导率很低，不利于热量的传递，因此会加剧自热效应。
图1为根据本公开一个实施例的半导体装置的制造方法的简化流程图。
如图1所示，在步骤101，提供半导体衬底。在步骤103，在衬底上形成金刚石膜。图2示出了在衬底上形成金刚石膜的示意截面图。这里，半导体衬底201例如可以是硅(Si)衬底、绝缘体上硅(SOI)衬底等。衬底201中可以形成有阱区，例如N阱和P阱(如图2中所示)。例如，可以采用等离子体化学气相沉积(PECVD)，例如微波PECVD，采用甲醇-氢气混合气和丙酮-氢气混合气为源气体，在单晶硅衬底上沉积金刚石膜。这里，沉积的金刚石膜可以为几百纳米，例如100-200纳米。
回到图1，在步骤105，对金刚石膜进行刻蚀，例如氧等离子体刻蚀，以形成延伸到衬底的沟槽。如图3所示，对金刚石膜202进行刻蚀所形成的沟槽可以是一个或多个，图3示意性地示出了两个，即第一沟槽301和第二沟槽302。
然后，在步骤107，在形成的沟槽中的衬底上外延生长半导体材料，以形成半导体鳍片。如图4所示，在第一沟槽301中的衬底201上外延生长第一半导体材料，以形成在第一沟槽301中的第一半导体鳍片401，第一半导体鳍片401可以用于形成N型半导体器件；在第二沟槽302中的衬底201上外延生长第二半导体材料，以形成在第二沟槽302中的第二半导体鳍片402，第二半导体鳍片402可以用于形成P型半导体器件。在一个实施例中，外延生长第一半导体材料时可以原位掺杂B，外延生长第一半导体材料时可以原位掺杂P。在一个实施例中，所形成的半导体鳍片可以包括第一部分和位于第一部分上的第二部分，其中，第一部分的平均掺杂浓度高于第二部分的平均掺杂浓度。优选地，第二部分可以为本征半导体材料。在另一个实施例中，所形成的半导体鳍片的掺杂浓度由底部向顶部逐渐减小，也就是说，半导体鳍片底部的掺杂浓度基本大于顶部的掺杂浓度。如此，在后续形成半导体器件后，可以减小源区和漏区之间的穿通效应，并且可以提高沟道中的载流子的迁移率。
接下来，在步骤109，去除金刚石膜的一部分以露出半导体鳍片的上部，如图5所示。
如上，提供了根据本公开一些实施例的半导体装置的制造方法。
需要指出的是，在本文中，除非特别指出，否则“截面图”均为沿着栅极结构所截取的截面图。
在图1所示的步骤109之后，在一些实施例中，制造方法还可以包括如下步骤：
在半导体鳍片上形成第一栅极结构。如图6所示，第一栅极结构601包括包绕在露出的半导体鳍片(例如第二半导体鳍片402)的一部分上的第一栅极介质层611和在第一栅极介质层611上的第一栅极621。这里，第一栅极结构601也可以作为伪栅结构。第一栅极介质层611可以是氧化物层，第一栅极621可以是多晶硅。如果第一栅极结构601是伪栅结构，则该伪栅结构在之后的步骤中会被栅极结构替代。
之后，可以形成用于第一栅极结构的间隔物。图7示出了沿着半导体鳍片的未被第一栅极结构覆盖的部分的截面图。如图7所示，间隔物701还覆盖半导体鳍片的未被第一栅极结构覆盖的部分的侧壁。
然后，可以在第一栅极结构两侧的半导体鳍片的上表面外延生长半导体材料(例如，Si或SiGe)，以形成抬升的有源区(包括源区和/或漏区)。如图8所示，对于N型半导体器件来说，可以在第一栅极结构两侧的第一半导体鳍片801的上表面外延生长Si，以形成抬升的源区/漏区801。对于P型半导体器件来说，可以在第一栅极结构两侧的第二半导体鳍片802的上表面外延生长SiGe，以形成抬升的源区/漏区802，以便于向器件引入应力。其中，在外延生长时可以进行原位掺杂，例如掺入P。
在同时包括N型半导体器件和P型半导体器件的情况下，可以通过如下步骤分别形成N型半导体器件和P型半导体器件的抬升的有源区：
在第一栅极结构两侧的第一半导体鳍片401和第二半导体鳍片402的上表面和侧面形成牺牲层702，例如氧化物层，如图7所示；然后，在第一栅极结构两侧的第一半导体鳍片401和第二半导体鳍片402的侧面形成的牺牲层上形成间隔物702；之后，去除第一栅极结构两侧的第一半导体鳍片401的上表面的牺牲层702；然后，在露出的第一栅极结构两侧的第一半导体鳍片401的上表面外延生长半导体材料，例如Si，以形成N型半导体器件的抬升的有源区801；之后，如图8所示，去除第一栅极结构两侧的第二半导体鳍片402的上表面的牺牲层702；在露出的第一栅极结构两侧的第二半导体鳍片402的上表面外延生长半导体材料，例如SiGe，以形成P型半导体器件的抬升的有源区802。
在形成抬升的有源区的情况下，接下来，可以形成层间介质层以覆盖第一栅极结构、露出的金刚石膜以及抬升的有源区。或者，在不形成抬升的有源区的情况下，在图7的基础上形成层间介质层以覆盖第一栅极结构、露出的金刚石膜以及半导体鳍片(有源区)。然后，对层间介质层901进行平坦化，以露出第一栅极结构601的上表面，如图9所示。
随后，去除第一栅极结构以形成凹陷，从而露出半导体鳍片的一部分，如图10所示，形成了第一凹陷1001(其与第一半导体鳍片401对应)和第二凹陷1002(其与第二半导体鳍片402对应)。
之后，在半导体鳍片的露出部分的表面上形成第二栅极结构。在一个实现方式中，如图11所示，在第一凹陷1001中，在第一半导体鳍片401的露出部分的表面上形成界面层1111，例如可以通过热氧化的方式形成硅的氧化物层作为界面层1111。然后，在界面层上依次形成第二栅极介质层1121和功函数调节层1131。这里，第二栅极介质层1121优选为高K电介质材料。用于N沟道器件的功函数调节层(也称为N型功函数调节层)1131的材料可以包括TiAl、TiCAl、TiNAl或TiSiAl中的一种或多种。
之后，在功函数调节层1131上沉积第二栅极材料1141，例如金属栅极材料，以填充与第一半导体鳍片对应的第一凹陷1001，从而形成第二栅极结构1101。
类似地，在第二半导体鳍片的露出部分的表面上形成第二栅极结构1101的步骤包括：
在第二凹陷1002中，在第二半导体鳍片402的露出部分的表面上形成界面层1111；然后，在界面层上依次形成第二栅极介质层1121和功函数调节层1131’。之后，在功函数调节层1131’上沉积第二栅极材料1141，例如金属栅极材料，以填充与第二半导体鳍片对应的第二凹陷1002，从而形成第二栅极结构1101。这里，用于P沟道器件的功函数调节层(也称为P型功函数调节层)1131’例如可以是TixNy(典型的为TiN)、TaN、TaC等其他材料。
当然，在第一半导体鳍片和第二半导体鳍片的露出部分的表面上形成第二栅极结构时，也可以先同时在第一半导体鳍片401和第二半导体鳍片402的露出部分的表面上形成界面层1111。然后，在形成界面层的与第一凹陷1001中依次形成第二栅极介质层1121和P型功函数调节层1131’。之后，在P型功函数调节层1131’上沉积第二栅极材料1141，以填充第一凹陷1001和第二凹陷1002。然后，去除在第一凹陷1001中形成的第二栅极材料1141和P型功函数调节层1131’。之后，在第一凹陷1001中的第二栅极介质层1121上形成N型功函数调节层1131。最后，在N型功函数调节层1131上沉积第二栅极材料1141，以填充第一凹陷1001，从而形成第二栅极结构1101。
根据本发明，提供了新颖的半导体装置及其制造方法。根据本发明的方法，采用了热导率高的金刚石膜隔离半导体鳍片，在半导体装置工作时产生的热量可以很快地传递到衬底并消散，改善了器件的自热效应和散热，提高了器件的稳定性。
本公开还公开了一种半导体装置，参见图5，该半导体装置包括：
半导体衬底201；
位于衬底201上的半导体鳍片，例如第一半导体鳍片401；
位于半导体鳍片两侧且覆盖半导体鳍片的下部的金刚石膜202。
在一个实施例中，所形成的半导体鳍片可以包括第一部分和位于第一部分上的第二部分，其中，第一部分的平均掺杂浓度高于第二部分的平均掺杂浓度。优选地，第二部分可以为本征半导体材料。在另一个实施例中，所形成的半导体鳍片的掺杂浓度由底部向顶部逐渐减小。也就是说，半导体鳍片底部的掺杂浓度基本大于顶部的掺杂浓度，如此在后续形成半导体器件后，可以减小源区和漏区之间的穿通效应，并且可以提高沟道中的载流子的迁移率。
在一个实施例中，参见图6，该装置还可以包括：在半导体鳍片上的第一栅极结构601，第一栅极结构601包括包绕在半导体鳍片的一部分上的第一栅极介质层611和在第一栅极介质层上的第一栅极621。
在一个实施例中，参见图7，该装置还可以包括：用于第一栅极结构601的间隔物701，所述间隔物701还覆盖所述半导体鳍片，例如第一半导体鳍片401的未被所述第一栅极结构覆盖的部分的侧壁。
在一个实施例中，参见图8，该装置还可以包括：在所述第一栅极结构两侧的半导体鳍片的上表面外延生长Si或SiGe形成的抬升的有源区801或802。
在一个实施例中，参见图11，所述半导体鳍片包括第一半导体鳍片401和第二半导体鳍片402，所述第一半导体鳍片401用于形成N型半导体器件，所述第二半导体鳍片402用于形成P型半导体器件。
在一个实施例中，参见图11，所述装置还包括：在所述半导体鳍片上的第二栅极结构，所述第二栅极结构包括在所述半导体鳍片的一部分上的界面层，在所述界面层上的第二栅极介质层，在所述第二栅极介质层上的功函数调节层、以及在所述功函数调节层上的第二栅极。
例如，参见图11，对于N型半导体器件来说，所述装置还包括：在第一半导体鳍片401上的第二栅极结构1101，该第二栅极结构1101包括在第一半导体鳍片401的一部分上的界面层1111，在界面层1111上的第二栅极介质层1121，在第二栅极介质层1121上的NMOS功函数调节层1131、以及在NMOS功函数调节层上1131的第二栅极1141；
对于P型半导体器件来说，所述装置还包括：在第二半导体鳍片402上的第二栅极结构1101，该第二栅极结构1101包括在第二半导体鳍片402的一部分上的界面层1111，在界面层1111上的第二栅极介质层1121，在第二栅极介质层1121上的PMOS功函数调节层1131’、以及在PMOS功函数调节层1131’上的第二栅极1141。
当然，本公开提供的半导体装置也可以同时包括N型半导体器件和P型半导体器件，从而半导体装置可以同时包括在第一半导体鳍片401上的第二栅极结构1101和在第二半导体鳍片402上的第二栅极结构1101。
至此，已经详细描述了根据本公开实施例的半导体装置及其制造方法。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节，本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。另外，本说明书公开所教导的各实施例可以自由组合。本领域的技术人员应该理解，可以对上面说明的实施例进行多种修改而不脱离如所附权利要求限定的本公开的精神和范围。

Claims (15)

1.一种半导体装置的制造方法，其特征在于，包括：
提供半导体衬底；
在所述衬底上形成金刚石膜；
对所述金刚石膜进行刻蚀，以形成延伸到所述衬底的沟槽；
在形成的沟槽中的衬底上外延生长半导体材料，以形成半导体鳍片，所述半导体鳍片包括第一半导体鳍片和第二半导体鳍片；
去除金刚石膜的一部分以露出所述半导体鳍片的上部；
在所述半导体鳍片上形成第一栅极结构，所述第一栅极结构包括包绕在所露出的半导体鳍片的一部分上的第一栅极介质层和在所述第一栅极介质层上的第一栅极；
在第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的上表面和侧面形成牺牲层；
在第一栅极结构的侧壁和第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的侧面形成的牺牲层上形成间隔物。
2.根据权利要求1所述的方法，其特征在于，所述沟槽包括第一沟槽和第二沟槽；
所述半导体鳍片包括：在所述第一沟槽中的所述第一半导体鳍片，所述第一半导体鳍片用于形成N型半导体器件；以及在所述第二沟槽中的所述第二半导体鳍片，所述第二半导体鳍片用于形成P型半导体器件。
3.根据权利要求1所述的方法，其特征在于，所述方法还包括：
去除第一栅极结构两侧的第一半导体鳍片的上表面的牺牲层；
在露出的第一栅极结构两侧的第一半导体鳍片的上表面外延生长半导体材料以形成抬升的有源区；
去除第一栅极结构两侧的第二半导体鳍片的上表面的牺牲层；
在露出的第一栅极结构两侧的第二半导体鳍片的上表面外延生长半导体材料以形成抬升的有源区。
4.根据权利要求3所述的方法，其特征在于，所述方法还包括：
形成层间介质层以覆盖所述第一栅极结构、露出的金刚石膜以及抬升的有源区；
对所述层间介质层进行平坦化，以露出所述第一栅极结构的上表面；
去除所述第一栅极结构以形成凹陷，从而露出所述半导体鳍片的一部分；
在所述半导体鳍片的露出部分的表面上形成第二栅极结构。
5.根据权利要求4所述的方法，其特征在于，所述凹陷包括分别与所述第一半导体鳍片和所述第二半导体鳍片对应的第一凹陷和第二凹陷，所述第一半导体鳍片用于形成N型半导体器件，所述第二半导体鳍片用于形成P型半导体器件。
6.根据权利要求4所述的方法，其特征在于，所述形成第二栅极结构包括：
在所述凹陷中，在所述半导体鳍片的露出部分的表面上形成界面层；
在所述界面层上依次形成第二栅极介质层和功函数调节层；
在所述功函数调节层上沉积第二栅极材料，以填充于所述凹陷。
7.根据权利要求1所述的方法，其特征在于，所述半导体鳍片包括第一部分和位于第一部分上的第二部分；
所述第一部分的平均掺杂浓度高于所述第二部分的平均掺杂浓度。
8.根据权利要求7所述的方法，其特征在于，所述第二部分为本征半导体材料。
9.根据权利要求1所述的方法，其特征在于，所述半导体鳍片的掺杂浓度由底部向顶部逐渐减小。
10.一种半导体装置，其特征在于，包括：
半导体衬底；
位于所述衬底上的半导体鳍片，所述半导体鳍片包括第一半导体鳍片和第二半导体鳍片；
位于半导体鳍片两侧且覆盖半导体鳍片的下部的金刚石膜；
在所述半导体鳍片上的第一栅极结构，所述第一栅极结构包括包绕在所述半导体鳍片的一部分上的第一栅极介质层和在所述第一栅极介质层上的第一栅极；
在第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的侧面上的牺牲层；
在第一栅极结构的侧壁和在第一栅极结构两侧的第一半导体鳍片和第二半导体鳍片的侧面的牺牲层上的间隔物；
在第一栅极结构两侧的所述半导体鳍片的上表面的抬升的有源区。
11.根据权利要求10所述的装置，其特征在于，所述第一半导体鳍片用于形成N型半导体器件，所述第二半导体鳍片用于形成P型半导体器件。
12.根据权利要求10所述的装置，所述装置还包括：
在所述半导体鳍片上的第二栅极结构，所述第二栅极结构包括在所述半导体鳍片的一部分上的界面层，在所述界面层上的第二栅极介质层，在所述第二栅极介质层上的功函数调节层、以及在所述功函数调节层上的第二栅极。
13.根据权利要求10所述的装置，其特征在于，所述半导体鳍片包括第一部分和位于第一部分上的第二部分；
所述第一部分的平均掺杂浓度高于所述第二部分的平均掺杂浓度。
14.根据权利要求13所述的装置，其特征在于，所述第二部分为本征半导体材料。
15.根据权利要求10所述的装置，其特征在于，所述半导体鳍片的掺杂浓度由底部向顶部逐渐减小。
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