CN106908708B - A kind of gallium nitride based light emitting diode analysis method for reliability based on electroluminescent focus statistics - Google Patents
A kind of gallium nitride based light emitting diode analysis method for reliability based on electroluminescent focus statistics Download PDFInfo
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- CN106908708B CN106908708B CN201710130645.0A CN201710130645A CN106908708B CN 106908708 B CN106908708 B CN 106908708B CN 201710130645 A CN201710130645 A CN 201710130645A CN 106908708 B CN106908708 B CN 106908708B
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention discloses a kind of gallium nitride based light emitting diode analysis method for reliability based on electroluminescent focus statistics.This method passes through stepstress test or reverse scan current -voltage curve first, the reverse leakage current degenerative process at any time for analyzing gallium nitride based light emitting diode, choose reverse leakage current is in the voltage of apparent ascendant trend as fixed-bias transistor circuit when acquiring component electroluminescent hot spot at any time；Then by low-light microscopic system, the image of an electroluminescent hot spot is acquired at regular intervals；Finally by electroluminescent hot spot number is accumulated in statistics light emitting diode component degenerative process, the Weibull distribution curve of hot spot generation time is drawn, to analyze reliability and the service life of light emitting diode component.The present invention realizes the fail-safe analysis to gallium nitride based light emitting diode component, than existing methods compared to advantages such as quick, low costs using a kind of simple operable method.
Description
Technical field
The present invention relates to gallium nitride based light emitting diode reliability analysis technology fields, more particularly to one kind to be based on electroluminescent hair
The gallium nitride based light emitting diode analysis method for reliability of light focus statistics.
Background technique
Recently as the continuous maturation of iii-v based luminescent material technology, light emitting diode is widely used in colored aobvious
Show, the storage of indicator light, data, medical treatment and the fields such as traffic lights, especially because the fast development of gallium nitride based light emitting diode,
Global semiconductor has been developed into true color that gallium nitride is basic light emitting diode and white light emitting diode product
Illuminate the hot spot of development & production.
The most important advantage of light emitting diode is the longer life expectancy relative to other light sources such as incandescent lamp bulb, and reliability is more
It is high.But this characteristic depends on many manufacture factors.With regard to currently used using sapphire as the gallium nitride serial emission two of substrate
Pole pipe product, Sapphire Substrate and epitaxial layer of gallium nitride lattice mismatch are 13%, thermal mismatching 34%, therefore there are serious such as position
The problems such as dislocation density is big, defect is more, crystal quality is poor.The stability of long-time service to light emitting diode all is caused to cause by these
The influence of life.Currently, light emitting diode component reliability analysis method is the mistake based on a large amount of light emitting diode component
Effect statistics, this method have two: 1. at high cost, it is contemplated that the accuracy of failure statistics model is needed using a large amount of
Light emitting diode component carry out failure analysis；2. the time is long, failure analysis is based on component in forward bias or reversed
The research of soft breakdown characteristic under bias condition generally requires hundreds of to differ to tens of thousands of a hours.
The purpose of the present invention is to the deficiencies in the prior art, provide a kind of new quick, inexpensive luminous two
The analysis method for reliability of pole pipe component.
Summary of the invention
In view of the shortcomings of the prior art, the purpose of the present invention is intended to provide a kind of new quick, inexpensive shine
Diode component reliability analysis method.This method carries out applying fixed reverse bias to the light emitting diode component of preparation
The electricity degradation testing of voltage counts the number of electroluminescent hot spot in degenerative process by electroluminescent imaging system, draws
The distribution curve of hot spot generation time.Pass through the initial failure of Weibull distribution model analysis light emitting diode component, accidentally mistake
The reliability of effect and loss failure three phases.
The present invention is achieved through the following technical solutions:
1. analyzing the degenerative process of the reverse leakage current of gallium nitride based light emitting diode at any time.To light emitting diode member device
Part carries out stepstress test, and at normal temperature, test voltage is stepped up since lesser reverse bias voltage, Mei Ge electricity
Compression continues for some time, until there is soft breakdown phenomenon.
2. capturing the image of electroluminescent hot spot in light emitting diode component degenerative process by low-light microscopic system.Tool
Body method is, in gallium nitride based light emitting diode degenerative process, chooses leakage current with stress time in the trend that rises appreciably
Fixed-bias transistor circuit when bias voltage is as acquisition electroluminescent hot spot image.Light emitting diode component to be measured is placed on probe
On platform, fixed reverse biased is applied to the component by source table.One is captured at regular intervals by low-light microscopic system
The picture of electroluminescent hot spot in light emitting diode component degenerative process.
3. counting electroluminescent hot spot number.By a gallium nitride based light emitting diode component be equivalent to multiple areas compared with
The parallel connection of small component, the lesser component of the area of each corresponding failure of the electroluminescent hotspot location,
The number for confirming the electroluminescent hotspot location is the number of electroluminescent hot spot.Light emitting diode component is applying fixation
Reverse biased during, the cumulative amount of leakage current and the electroluminescent hot spot during stress approximately linearly increases.Cause
This, the electroluminescent hot spot number that the failure likelihood dependent on the time of the component can continuously occur by number replaces
Out-of-service time by recording a large amount of sample carries out fail-safe analysis.This method is advantageous in that without considering differences between samples pair
Analyze the influence of result.
4. analyzed by the Weibull distribution of the hot spot generation time initial failure of light emitting diode component, accidentally
The reliability of failure and loss failure three phases.Accident analysis for component reliability, weber (Weibull) distributed mode
Type is the most commonly used.Corresponding cumulative distribution function is F (t)=1-exp [- (τ B/ η) β], and wherein η represents out-of-service time characteristic
Scale parameter, β are a weber slope (or form parameters), indicate that failure rate changes with time.It is applied by counting with reversal of stress
The electroluminescent hot spot number occurred is accumulated between added-time, the Weibull distribution curve of the component is drawn, to analyze component
Reliability.
Detailed description of the invention
Fig. 1 is the gallium nitride based light emitting diode analysis method for reliability flow chart based on electroluminescent focus statistics；
Fig. 2 is reverse leakage current evolution process figure of gallium nitride based light emitting diode during stepstress；
Fig. 3 is low-light microscopic system；Respectively label respectively represents in figure: the highly sensitive camera lens Charged Couple component of 1-,
2- microscope, 3- are tested gallium nitride based light emitting diode, the source 4- table
Fig. 4 is the spatial distribution map of electroluminescent hot spot in degenerative process；
Fig. 5 is when backward voltage is -28V, and electroluminescent hot spot accumulates the relation curve of number and pull-down current；
Fig. 6 is the Weibull distribution curve of gallium nitride based light emitting diode.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
The present invention provides one kind by electroluminescent imaging system, counts in gallium nitride based light emitting diode degenerative process
The accumulation number of electroluminescent hot spot draws the distribution curve of hot spot generation time, and is shone by Weibull distribution model analysis
The method of the reliability of the initial failure of diode component, random failure and loss failure three phases.It specifically includes following
Step, as shown in Figure 1:
Step 1: analyzing the degenerative process of the reverse leakage current of gallium nitride based light emitting diode at any time.At normal temperature, right
The gallium nitride based light emitting diode component of preparation carries out stepstress test.
Specific test method is to apply reverse biased to component using source table, and since -5V, step-length is -5V, until
There is soft breakdown phenomenon in component.From figure 2 it can be seen that reverse leakage current is at any time when reverse biased is more than -25V
Apparent ascendant trend, the breakdown voltage of component are -40V.Therefore, when acquiring the image of electroluminescent hot spot, selection
Reversed fixed-bias transistor circuit range should be between -25V to -40V.The present embodiment is using -28V voltage.
Step 2: the figure of electroluminescent hot spot in light emitting diode component degenerative process is captured by low-light microscopic system
Picture.
The low-light microscopic system is a kind of analysis system that defect and failure are positioned using semiconductor light emitting phenomenon, such as
Shown in Fig. 3, including the highly sensitive camera lens Charged Couple component of 1-, 2- microscope, 3- are tested gallium nitride based light emitting diode, the source 4-
Table.Fixed reverse biased is applied to tested gallium nitride based light emitting diode component by source table, is existed when in tested component
When electric leakage and hot carrier's effect, photon transmitting is had from failpoint.It can get tested first device by traditional optical microscopy
The reflected image of part, in addition, photon will enter image intensifier from tested component.Image intensifier can amplify faint light
Signal, then vision signal is converted the signal into Charged Couple component (CCD), illuminated diagram is obtained by Computer Image Processing
Picture.Luminescent image is overlapped with reflected image, realizes the positioning to defect or failpoint.
Specific test method is by gallium nitride based light emitting diode component application -28V reverse biased.It is micro- using low-light
System, when the every increase -0.05mA of reverse leakage current acquires the image of an electroluminescent hot spot.Fig. 4, which is shown, works as reverse leakage
Stream is respectively -1.05mA, -1.75mA, -2.5mA, and when stress application time is respectively 800s, 3500s, 10620s acquires
The image of electroluminescent hot spot.In Fig. 4, the area of light emitting diode component is 300um × 300um, the lower left corner of component
It is respectively positive and negative electrode with the upper right corner, centre is transparent electrode, and white point is the electroluminescent of low-light microscopic system acquisition
Hot spot.As can be seen that as time increases, electroluminescent hot spot quantity also gradually increases under fixed reverse biased.
Step 3: statistics electroluminescent hot spot number.
Specific method is to analyze the electroluminescent hair acquired in light emitting diode component degenerative process by low-light microscopic system
Photo-thermal point image.One gallium nitride based light emitting diode component is equivalent to the parallel connection of the lesser component of multiple areas, often
The lesser component of the area of a corresponding failure of the electroluminescent hotspot location, confirms the electroluminescent hot spot
The number of position is the number of electroluminescent hot spot.It is found by statistics, light emitting diode component is applying the reversed of fixation
In bias voltages, the cumulative amount of reverse leakage current and the electroluminescent hot spot during stress approximately linearly increases, statistics knot
Fruit is as shown in Figure 5.Therefore, the electroluminescent that the failure likelihood dependent on the time of the component can continuously occur by number
Hot spot number, so that the out-of-service time by recording a large amount of sample be replaced to carry out fail-safe analysis.
Step 4: the analysis of light emitting diode component reliability.
Weber (Weibull) distribution is the most frequently used theoretical model of fail-safe analysis and longevity test.From probability theory and system
From the perspective of meter is learned, Weibull distribution is successional probability distribution, and cumulative distribution function is F (t)=1-exp [- (τ B/ η)
β], wherein η is the scale parameter for representing out-of-service time characteristic, and β is a weber slope (or form parameter).β < 1 indicate failure rate with
Time reduces, that is, deposits type failure in the early stage, or is infancy failure；β=1 indicate failure rate be at any time it is constant, this
Show that random external event is causing to fail, referred to as accidental type failure；β > 1 indicates failure rate increase with time, often has
During " aging ", referred to as loss-type failure.
The present embodiment delineates the generation of component hot spot by counting the relationship of out-of-service time and hot spot cumulative amount
The distribution curve of time, as shown in Figure 6.From fig. 6, it can be seen that the out-of-service time of electroluminescent hot spot obeys Weibull distribution.It is logical
It crosses and data is fitted, the β value of extraction is about 0.67 and 4.09, as infancy and loss-type failure.Infancy failure is lost
Effect is related with external factor, such as manufacturing defect；And in the loss phase, generation of failing derives from internal factor, pre- such as active layer
The defect pre-existed.The service life of light emitting diode component can be estimated by Weibull distribution curve.
The present invention counts electroluminescent heat in gallium nitride based light emitting diode degenerative process by electroluminescent imaging system
The accumulation number of point analyzes the reliable and expected life of component by Weibull distribution.It was degenerating due to only counting component
The accumulation number of electroluminescent hot spot in journey, component without breakdown, therefore compare with existing method required annealing time compared with
It is short；In addition, compared to it is existing by record a large amount of sample out-of-service time carry out reliability analysis method, this method it is good
Be in it is low in testing cost, and without consider differences between samples to analysis result influence.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (3)
1. a kind of gallium nitride based light emitting diode analysis method for reliability based on electroluminescent focus statistics, it is characterised in that:
This method comprises:
Analyze the degenerative process of the reverse leakage current of gallium nitride based light emitting diode at any time；
By low-light microscopic system, a light emitting diode component is captured in the degenerative process every preset time
The picture of electroluminescent hot spot analyzes the picture of the electroluminescent hot spot, by a gallium nitride based light emitting diode component
It is equivalent to the parallel connection of the lesser component of multiple areas, the face of each corresponding failure of the electroluminescent hotspot location
The lesser component of product confirms that the number of the electroluminescent hotspot location is the number of electroluminescent hot spot；
According to the number of the electroluminescent hot spot, it is based on Weibull distribution model, draws out-of-service time and hot spot cumulative amount
Relation curve determines scale parameter and shape parameter values in Weibull distribution, and according to parameter value analysis described luminous two
The reliability of pole pipe component and service life.
2. the gallium nitride based light emitting diode fail-safe analysis side according to claim 1 based on electroluminescent focus statistics
Method, which is characterized in that analyze the degenerative process of the reverse leakage current of gallium nitride based light emitting diode at any time, comprising:
Choose reverse leakage current is in the bias voltage that rises appreciably as fixation when acquiring electroluminescent hot picture at any time
Bias.
3. the gallium nitride based light emitting diode fail-safe analysis side according to claim 1 based on electroluminescent focus statistics
Method, which is characterized in that stepstress test is carried out to the gallium nitride based light emitting diode component, comprising:
Component is biased, since lesser reverse biased, reasonable step-length is set, until soft breakdown occurs in component
Phenomenon.
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| CN107219548B (en) * | 2017-07-31 | 2023-10-27 | 四川省核地质调查研究所 | Portable anti-Compton detector |
| CN107576895B (en) * | 2017-08-29 | 2020-02-21 | 上海华力微电子有限公司 | In-situ hot spot detection method suitable for TDDB |
| CN108535628A (en) * | 2018-03-20 | 2018-09-14 | 力特半导体（无锡）有限公司 | A kind of power semiconductor chip failure positioning method avoiding burn |
| CN113203929B (en) * | 2021-04-23 | 2022-11-11 | 香港科技大学深圳研究院 | Method for testing reliability of back bias voltage of gallium nitride power device |
| CN113406484B (en) * | 2021-08-19 | 2021-11-09 | 华芯半导体研究院(北京)有限公司 | Device and method for failure analysis of chip |
| CN117269712B (en) * | 2023-11-22 | 2024-01-30 | 墨研计算科学（南京）有限公司 | Method, device, equipment and medium for predicting hot carrier injection life of transistor |
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