CN112595726A - Pixel defect detection method of OLED (organic light emitting diode) micro display device - Google Patents

Pixel defect detection method of OLED (organic light emitting diode) micro display device Download PDF

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Publication number
CN112595726A
CN112595726A CN202011460698.7A CN202011460698A CN112595726A CN 112595726 A CN112595726 A CN 112595726A CN 202011460698 A CN202011460698 A CN 202011460698A CN 112595726 A CN112595726 A CN 112595726A
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pixel
defect
display device
oled
image information
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CN202011460698.7A
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孙浩
李牧词
茆胜
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Shenzhen Zhilianhui Network System Enterprise LP
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Shenzhen Zhilianhui Network System Enterprise LP
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The invention relates to a pixel defect detection method of an OLED (organic light emitting diode) micro display device, which comprises the following steps of: placing a sample to be detected on a detection platform, and lightening the sample to be detected; acquiring image information of the sample to be detected through an image acquisition system (CCD); and comparing the image information with the reference information to obtain actual defect data. The beneficial effects are that: the pixel defect of the OLED micro display device can be rapidly and accurately detected, the appearance of the pixel defect can be completely recorded, the size of the pixel defect is quantitatively processed, the position of the pixel defect is positioned, the detection efficiency and accuracy are improved, and the method has positive help for improving the process of the OLED micro display device.

Description

Pixel defect detection method of OLED (organic light emitting diode) micro display device
Technical Field
The invention relates to the technical field of pixel defect detection, in particular to a pixel defect detection method of an OLED (organic light emitting diode) micro display device.
Background
The OLED is a device for driving the transmission and the recombination of carriers in an organic material through an external electric field to convert electric energy into light energy, and the OLED micro-display has the advantages of low driving voltage, large luminous brightness, wide working temperature range (-40-80 ℃), wide viewing angle, high response speed, simple manufacturing process, low cost and the like, and becomes the most promising and novel flat-panel display at present.
The existing mature technology of the OLED is to use a Fine Metal Mask (FMM) to sequentially arrange and evaporate organic light emitting materials according to standard red, green and blue (hereinafter sometimes abbreviated as RGB) sub-pixels to prepare a color pixel pattern. In this method, the sub-pixels are likely to have defects, color mixing may occur, and display performance is seriously affected. At present, optical detection is mostly adopted to detect pixel defects of an OLED (organic light emitting diode) micro display device, but due to the moire phenomenon, the size, the area and the shape of the defects are indefinite, and the defects are easily influenced by ambient light.
The invention provides a pixel defect detection method and system of an OLED (organic light emitting diode) micro display device, which can detect a sample through a high-precision and high-resolution image acquisition system (CCD), improve the capacity of identifying and quantifying the pixel defects of the sample, and quickly and accurately position the defect position.
Disclosure of Invention
The invention provides a pixel defect detection method of an OLED (organic light emitting diode) micro display device, which aims to solve the problem of low detection efficiency in the prior art.
The technical problem solved by the invention is realized by adopting the following technical scheme:
a pixel defect detection method of an OLED (organic light emitting diode) micro display device comprises the following steps:
s01, placing the sample to be detected on a detection platform, and lighting the sample to be detected;
s02, acquiring image information of the sample to be detected through an image acquisition system (CCD);
and S03, comparing the image information with the reference information to obtain actual defect data.
Further comprising a step S04 of feeding back said actual defect data into the recording system.
Further, in step S01, the illuminated picture of the sample to be detected is a monochrome picture.
Furthermore, the image acquisition system is a high-precision and high-resolution image acquisition system, and the resolution of the image acquisition system is more than 2000W pixels.
Further, the data comparing method in step S03 includes the following steps:
s001, reading reference information, wherein the reference information comprises the area S of the reference pixelBase of
S002, superposing and comparing the reference information and the image information to obtain a contrast pattern of each pixel;
and S003, determining actual defect data of the image information according to the contrast pattern.
Further, the superposition comparison method in step S002 includes:
s201, acquiring the area S of each pixel in the image informationFruit of Chinese wolfberry；
S202, according to the formula delta-SBase of-SFruit of Chinese wolfberryObtaining the defect size of the pixel;
s203, according to the quantization formula delta-delta/SBase ofAnd a quantized value δ of the pixel is obtained.
Further, when the quantization value δ of the pixel is a positive number, it indicates that the image information is larger than the reference pixel size, and there is a defect that the actual pixel size exceeds the standard size; when the quantization value delta of the pixel is a negative value, the image information is smaller than the reference pixel size, and the defect of missing pixels exists.
As a preferred technical solution, the actual defect data further includes coordinates of a defective pixel and a quantized value of the defective pixel.
The invention has the beneficial effects that: the pixel defect of the OLED micro display device can be rapidly and accurately detected, the appearance of the pixel defect can be completely recorded, the size of the pixel defect is quantitatively processed, the position of the pixel defect is positioned, the detection efficiency and accuracy are improved, and the method has positive help for improving the process of the OLED micro display device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: a flow diagram of a pixel defect detection method of an OLED micro display device;
FIG. 2 is a drawing of the present invention: a flow diagram of a data comparison method;
FIG. 3 is a drawing of the present invention: a flow diagram of a superposition comparison method;
FIG. 4 is a schematic diagram of an implementation system;
FIG. 5 is a reference pattern for a standard full pixel size pattern;
fig. 6 is a schematic of a pattern of pixels on a sample to be tested.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to fig. 1 to 5, a pixel defect detecting method of an OLED micro display device includes the following steps:
s01, placing the sample to be detected on a detection platform, and lighting the sample to be detected;
s02, acquiring image information of the sample to be detected through an image acquisition system (CCD);
and S03, comparing the image information with the reference information to obtain actual defect data.
Further comprising a step S04 of feeding back said actual defect data into the recording system.
Preferably, in step S01, the illuminated picture of the sample to be detected is a monochrome picture, such as a pure color of red, green, blue, etc. The image acquisition system is a high-precision and high-resolution image acquisition system, and the preferred resolution is more than 2000W pixels.
The data comparison method in step S03 in the present invention includes the following steps:
s001, reading reference information, wherein the reference information comprises the area S of the reference pixelBase of
S002, superposing and comparing the reference information and the image information to obtain a contrast pattern of each pixel;
and S003, determining actual defect data of the image information according to the contrast pattern.
The superposition comparison method in the step S002 includes:
s201, acquiring the area S of each pixel in the image informationFruit of Chinese wolfberry；
S202, according to the formula delta-SBase of-SFruit of Chinese wolfberryObtaining the defect size of the pixel;
s203, according to the quantization formula delta-delta/SBase ofAnd a quantized value δ of the pixel is obtained.
When the quantization value delta of the pixel is a positive number, the image information is larger than the reference pixel size, and the defect that the actual pixel size exceeds the standard size exists; when the quantization value delta of the pixel is a negative value, the image information is smaller than the reference pixel size, and the defect of missing pixels exists. The actual defect data further includes coordinates of the defective pixel, and a quantized value of the defective pixel.
The invention can quickly and accurately detect the pixel defects of the OLED micro display device, can completely record the appearance of the pixel defects, can quantitatively process the sizes of the pixel defects, and can position the positions of the pixel defects, thereby improving the detection efficiency and accuracy and having positive help on the process improvement of the OLED micro display device.
Specifically referring to fig. 4 to 6, in the detection process, the OLED micro display device sample 100 with the pixel defect to be detected is placed on a detection platform (not shown in the figure), and the detection picture of the OLED micro display device sample 100 to be detected is lighted. The detection platform is provided with a high-precision and high-resolution image acquisition system (CCD)200, and the image acquisition system (CCD)200 is used for carrying out image acquisition on the alignment of a sample to be detected; the image information of the sample to be detected can be clearly obtained under the conditions of high precision and high resolution. The image acquisition system 200 should, among other things, meet a resolution of more than 2000W pixels, for example, on semiconductor KAI-43140, or germany IDS U3-3802 SE.
Such as that described above with reference to fig. 5, a reference pattern 120 having a standard full pixel size pattern, the reference pattern 120 comprising three primary color sub-pixels, an R pixel 122, a G pixel 124, and a B pixel 126, the sub-pixels having an area size of SBase ofThe reference pattern 120 is derived according to design conditions.
As shown in fig. 6, the image includes a non-defective pixel pattern, a pixel missing defect pattern, a pixel incomplete defect pattern, and a pixel oversized defect pattern. And superposing and comparing the acquired image 140 with the reference graph 120 to obtain a contrast pattern of pixels, and determining an actual defect 142, an actual defect 144 and an actual defect 146 in an acquisition area according to the contrast pattern. Subjecting the collected image to area SFruit of Chinese wolfberryCalculating and comparing with standard area of reference pattern, and obtaining the difference value of area comparison by the following formulaBase of-SFruit of Chinese wolfberryThat is, the size of the defect, a defect quantization value can be obtained by the following equation, where δ is Δ/SBase of(ii) a When the quantization value delta of the pixel defect is a positive value, the acquired pattern is larger than the standard pixel size, and the defect that the actual pixel size exceeds the standard size exists; and when the quantization value delta of the pixel defect is a negative value, the acquired pattern is smaller than the standard pixel size, the defect of pixel missing exists, finally, the area of the acquired image with the defect is recorded with coordinates, and the detected defect result is fed back to the recording system.
The invention can quickly and accurately detect the pixel defects of the OLED micro display device, can completely record the appearance of the pixel defects, can quantitatively process the sizes of the pixel defects, and can position the positions of the pixel defects, thereby improving the detection efficiency and accuracy and having positive help on the process improvement of the OLED micro display device.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (8)

1. A pixel defect detection method of an OLED (organic light emitting diode) micro display device is characterized by comprising the following steps of:
s01, placing the sample to be detected on a detection platform, and lighting the sample to be detected;
s02, acquiring image information of the sample to be detected through an image acquisition system (CCD);
and S03, comparing the image information with the reference information to obtain actual defect data.
2. The pixel defect detecting method of the OLED micro-display device as claimed in claim 1, further comprising step S04, feeding back the actual defect data into a recording system.
3. The method of claim 1, wherein in step S01, the illuminated image of the sample to be tested is a monochrome image.
4. The method according to claim 1, wherein the image capturing system is a high-precision, high-resolution image capturing system, and the resolution of the image capturing system is 2000W or more pixels.
5. The method of claim 1, wherein the data comparison method in step S03 comprises the following steps:
s001, reading reference information, wherein the reference information comprises the area S of the reference pixelBase of
S002, superposing and comparing the reference information and the image information to obtain a contrast pattern of each pixel;
and S003, determining actual defect data of the image information according to the contrast pattern.
6. The pixel defect detecting method of the OLED micro display device as claimed in claim 5, wherein the superposition contrast method in step S002 comprises:
s201, acquiring the area S of each pixel in the image informationFruit of Chinese wolfberry；
S202, according to the formula delta-SBase of-SFruit of Chinese wolfberryObtaining the defect size of the pixel;
s203, according to the quantization formula delta-delta/SBase ofAnd a quantized value δ of the pixel is obtained.
7. The pixel defect detection method of the OLED micro-display device according to claim 6, wherein when the quantization value δ of the pixel is positive, it indicates that the image information is larger than the reference pixel size, and there is a defect that the actual pixel size exceeds the standard size; when the quantization value delta of the pixel is a negative value, the image information is smaller than the reference pixel size, and the defect of missing pixels exists.
8. The method of claim 2, wherein the actual defect data further comprises coordinates of defective pixels and quantized values of defective pixels.
CN202011460698.7A 2020-12-11 2020-12-11 Pixel defect detection method of OLED (organic light emitting diode) micro display device Withdrawn CN112595726A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113345328A (en) * 2021-05-28 2021-09-03 Tcl华星光电技术有限公司 Mura repairing method for display panel
CN115183989A (en) * 2022-09-13 2022-10-14 武汉精立电子技术有限公司 Near-to-eye display module detection method and detection system
WO2023108545A1 (en) * 2021-12-16 2023-06-22 Jade Bird Display (Shanghai) Method for constructing defect detection model of micro led array panel, apparatures for dectectig pixel defect and devices
CN116642670A (en) * 2023-07-27 2023-08-25 武汉精立电子技术有限公司 Optical imaging method and device for micro display detection

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113345328A (en) * 2021-05-28 2021-09-03 Tcl华星光电技术有限公司 Mura repairing method for display panel
WO2023108545A1 (en) * 2021-12-16 2023-06-22 Jade Bird Display (Shanghai) Method for constructing defect detection model of micro led array panel, apparatures for dectectig pixel defect and devices
CN115183989A (en) * 2022-09-13 2022-10-14 武汉精立电子技术有限公司 Near-to-eye display module detection method and detection system
CN115183989B (en) * 2022-09-13 2023-01-10 武汉精立电子技术有限公司 Near-to-eye display module detection method and detection system
CN116642670A (en) * 2023-07-27 2023-08-25 武汉精立电子技术有限公司 Optical imaging method and device for micro display detection
CN116642670B (en) * 2023-07-27 2024-02-27 武汉精立电子技术有限公司 Optical imaging method and device for micro display detection

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Application publication date: 20210402