CN113203929B - Method for testing reliability of back bias voltage of gallium nitride power device - Google Patents
Method for testing reliability of back bias voltage of gallium nitride power device Download PDFInfo
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Abstract
The invention relates to a method for testing the back bias reliability of a gallium nitride power device and a collision ionization method. The test method comprises the following steps: (1) testing the off-state characteristics of the device; (2) acquiring current characteristics; (3) testing the off-state characteristics of the suspended source end; (4) acquiring channel electric field distribution by utilizing a Sentaurus simulation; (5) acquiring the impact ionization occurrence reason; (6) continuing the step (2) all the way; (7) testing voltage bias before impact ionization occurs; (8) Obtaining the corresponding service life of the device at normal temperature, and drawing a Weibull distribution diagram; (9) estimating the service life at normal temperature; (10) heating the other path of the solution to 150 ℃ by using a temperature changing table; (11) carrying out an off-state characteristic test; (12) acquiring off-state current characteristics; (13) selecting a voltage bias test before impact ionization occurs; (14) drawing a Weibull distribution diagram at high temperature; (15) life estimation; (16) obtaining the real life of the device at normal temperature and high temperature.
Description
Technical Field
The invention belongs to the technical field of gallium nitride power devices, and particularly relates to a method for testing reliability of reverse bias accelerated stress of a gallium nitride power device and a method for impact ionization of the gallium nitride power device.
Background
With the advantages of high performance and high frequency, gallium nitride power devices play a leading role in the development of next generation power switching devices. With the growing commercialization of gallium nitride power devices, reliability has always been the primary issue to be addressed in practical power switching applications. A qualified commercial device will need to have a lifetime of at least 10 years in a practical operating environment. This means that the time that the device has elapsed since it was first used until it failed is at least 10 years. However, it really takes 10 years to obtain the lifetime of the device, and this approach is clearly not practical. In this case, an accelerated model of external strain and failure occurrence is typically established to predict the lifetime of the device in a short time of experiment. Generally, a breakdown test is performed on a device, a critical breakdown point voltage is taken to perform a bias stress acceleration test to obtain a corresponding service life, and then the service life under a rated voltage is reversely deduced. However, this prediction method is based on ideally-derived lifetime prediction, ignoring new mechanisms that may occur during extreme accelerated operation of the device, which may not occur in normal operating environments, thereby resulting in a lack of accuracy in the predicted lifetime.
Conventionally, a bias acceleration stress test is performed on a device, generally, a voltage before a breakdown point of the device is taken as a bias point to perform a test, so as to obtain a corresponding service life, and a working voltage corresponding to a 10-year service life or a device service life under a rated voltage is obtained by reverse-deducing according to service life distribution under the voltage before the breakdown point. However, the conventional method does not consider that the high current introduced when impact ionization intervenes accelerates device damage.
For the normal temperature test, the invention also verifies the 150 ℃ high temperature test. Since impact ionization shows a positive temperature coefficient, impact ionization characteristics are weakened at high temperatures, and thus, the deviation of the life before and after impact ionization at high temperatures is reduced compared to the results of the normal temperature test. Again, it was demonstrated that under extreme accelerated bias testing, the intervention of a new process (e.g., impact ionization) can cause device current to change. At this time, the voltage test before the final breakdown point is selected according to the traditional method to estimate the service life, which greatly affects the estimation accuracy.
Disclosure of Invention
The invention aims to provide a device which can generate impact ionization under a high-voltage stress acceleration test, and the impact ionization can cause the leakage of the device to increase greatly in an off state. In the conventional life prediction method, namely, a bias voltage value is taken before a critical breakdown point, the occurrence of device failure can be accelerated by neglecting leakage surge caused by impact ionization in the process of operating the device under an extreme bias voltage. Therefore, the predicted device lifetime value under such conventional methods tends to be small. It is therefore important to provide a method for accurately predicting lifetime of gallium nitride devices in reverse bias stress acceleration tests.
The technical scheme of the invention is that the method for testing the reliability of the reverse bias accelerated stress of the gallium nitride power device is characterized by comprising the following steps:
(1) Testing the off-state characteristics of the device at normal temperature;
(2) Obtaining the off-state current characteristic of the device;
(3) Testing the off-state characteristic of the suspended source end;
(4) Acquiring channel electric field distribution by utilizing Sentaurus simulation;
(5) Acquiring the occurrence reason of the impact ionization by combining the experimental result;
(6) Then dividing the mixture into two paths, and continuing the step (2) for one path;
(7) Under normal temperature, avoiding the influence of impact ionization intervention, and selecting voltage before impact ionization occurs to perform a bias test;
(8) Obtaining the corresponding service life of the device at normal temperature, and drawing a Weibull distribution diagram at normal temperature;
(9) Estimating the service life at normal temperature according to the Weibull distribution diagram;
(10) Continuing the step (6), and heating the other path to 150 ℃ by using a temperature changing table;
(11) Performing off-state characteristic test at 150 ℃;
(12) Obtaining the 150 ℃ off-state current characteristic of the device;
(13) Avoiding the influence of impact ionization intervention at high temperature, and selecting voltage before impact ionization to perform bias test;
(14) Obtaining the corresponding service life of the device at high temperature, and drawing a Weibull distribution diagram at high temperature;
(15) Estimating the service life at high temperature according to the Weibull distribution diagram;
(16) And (5) continuing the step (9) to obtain the real service life of the device under normal temperature and high temperature.
The other technical scheme of the invention is that the gallium nitride power device impact ionization method is characterized by comprising the following steps:
performing off-state breakdown test on a device to obtain breakdown characteristics of two ends of the device; the breakdown characteristic means that the current of the device is obtained to be increased rapidly twice;
secondly, an off-state characteristic test is carried out through the suspended source end, and the phenomenon of the first section of current surge disappears;
thirdly, a high electric field region appears near the source end connecting field plate close to the drain electrode by performing two-dimensional simulation on the device channel;
and when the power source is in an off state, electrons are injected from the source end and flow through the body region, and when the electrons pass through a channel high electric field region corresponding to the edge of the source end connected field plate, the electrons are accelerated by an electric field to obtain set kinetic energy, so that collision ionization is generated, electron hole pairs are correspondingly generated, current is increased rapidly, and first breakdown is caused.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for predicting the leakage current of a gallium nitride device in an actual working environment by selecting a voltage value as a bias stress test point before a new mechanism (collision ionization) occurs, so that the situation is closer to the leakage current level of the gallium nitride device in the actual working environment, and the accurate service life of the device is predicted.
Drawings
FIG. 1 is a flow chart of a method for testing reliability of reverse bias accelerated stress of a gallium nitride power device according to the present invention;
fig. 2a and 2b are schematic diagrams of impact ionization characteristics (a) off-state leakage characteristics, (b) floating-source-side leakage characteristics of the device of the present invention;
fig. 3a and 3b are a diagram of an electric field simulation distribution of a device channel of an impact ionization principle diagram (a) and a schematic diagram of impact ionization generation of the invention (b);
FIG. 4 is a graph of device breakdown characteristics at different temperatures according to the present invention;
FIGS. 5a, 5b, and 5C show a comparison of conventional and inventive life prediction methods at 25 ℃, where: (a) time dependent device breakdown current curve, (b) weibull characteristic curve, (c) deviation plot of traditional method (dashed line) and invention (solid line) obtained from weibull distribution versus 10 year life prediction;
FIGS. 6a, 6b, and 6C show a comparison of the conventional and inventive life prediction methods at 150 ℃, wherein: a time dependent device breakdown current curve, (b) a weibull characteristic curve, (c) a deviation plot of the traditional method (dashed line) and the invention (solid line) obtained from the weibull distribution versus the 10 year life prediction.
Detailed Description
The invention will be further described in detail with reference to the following examples:
example 1: exploring the collision ionization principle of the gallium nitride power device.
Through static basic characteristic test and typical off-state breakdown test of the device, the device is found to have two-end breakdown characteristic through experiments. And (4) performing off-state characteristic test through the suspended source end to find that the first section breakdown which should appear originally disappears. It can thus be confirmed that the first breakdown of the device is related to the source of the device. Through two-dimensional simulation of a device channel, a high electric field region is found to be generated near a source end connecting field plate close to a drain electrode. In combination with the data, it can be confirmed that, in an off state, electrons are injected from the source end and flow through the body region, and when the electrons pass through a channel high electric field region corresponding to the edge of the source end connected to the field plate, the electrons are accelerated by the electric field to obtain a certain kinetic energy, so that impact ionization occurs, electron-hole pairs are correspondingly generated, and current is increased rapidly, which results in a first breakdown phenomenon.
Example 2: and (3) carrying out reverse bias accelerated stress reliability test on the gallium nitride power device at room temperature.
Conventionally, a bias acceleration stress test is performed on a device, generally, a voltage before a breakdown point of the device is taken as a bias point to perform a test, so as to obtain a corresponding service life, and a working voltage corresponding to a 10-year service life or a device service life under a rated voltage is obtained by reverse-deducing according to service life distribution under the voltage before the breakdown point. However, the conventional method does not consider that the high current introduced when impact ionization intervenes accelerates device damage. Considering that the normal working voltage of the device is far less than the voltage generated by impact ionization, under the condition, the estimation accuracy is influenced by selecting the voltage before the final breakdown point to carry out an accelerated test to estimate the service life of the device. The invention provides an accelerated bias test which selects a voltage before impact ionization does not occur, namely a first breakdown point, so that the test is more reliable. The experimental result proves that the estimated service life of the device by the voltage test before and after the selected impact ionization is actually deviated, wherein the estimated service life of the voltage test before the impact ionization is closer to the actual working service life of the device.
Example 3: and (3) testing the reliability of reverse bias accelerated stress of the gallium nitride power device at high temperature.
For the normal temperature test, the invention also verifies the 150 ℃ high temperature test. Since impact ionization exhibits a positive temperature coefficient, impact ionization characteristics are reduced at high temperatures, and thus, the deviation of life before and after impact ionization at high temperatures is reduced compared to normal temperature test results. Again, it was demonstrated that under extreme accelerated bias testing, the intervention of a new process (e.g., impact ionization) can cause device current to change. At this time, the voltage test before the final breakdown point is selected according to the traditional method to estimate the service life, which greatly affects the estimation accuracy. Therefore, the present invention proposes to perform a bias test before the intervention of a new process (e.g., impact ionization), in which case the estimated lifetime is more accurate and reliable.
Example 4: the method for testing the reliability of the reverse bias accelerated stress of the gallium nitride power device comprises the following steps:
(1) Testing the off-state characteristics of the device at normal temperature;
(2) Obtaining the off-state current characteristic of the device;
(3) Testing the off-state characteristic of the suspended source end;
(4) Acquiring channel electric field distribution by utilizing Sentaurus simulation;
(5) Acquiring the occurrence reason of impact ionization by combining the experimental result;
(6) Then dividing the mixture into two paths, and continuing the step (2) for one path;
(7) Under normal temperature, avoiding the influence of impact ionization intervention, and selecting voltage before impact ionization occurs to perform a bias test;
(8) Obtaining the corresponding service life of the device at normal temperature, and drawing a Weibull distribution diagram at normal temperature;
(9) Estimating the service life at normal temperature according to the Weibull distribution diagram;
(10) Continuing the step (6), and heating the other path to 150 ℃ by using a temperature changing table;
(11) Performing off-state characteristic test at 150 ℃;
(12) Obtaining the 150 ℃ off-state current characteristic of the device;
(13) Avoiding the influence of collision ionization intervention at high temperature, and selecting voltage before collision ionization to perform bias test;
(14) Obtaining the corresponding service life of the device at high temperature, and drawing a Weibull distribution diagram at high temperature;
(15) Estimating the service life at high temperature according to the Weibull distribution diagram;
(16) And (5) continuing the step (9) to obtain the real service life of the device under normal temperature and high temperature.
Example 5: the collision ionization method of the gallium nitride power device comprises the following steps:
performing static basic characteristic test and off-state breakdown test on a device to obtain breakdown characteristics of two ends of the device; the breakdown characteristic refers to obtaining two times of surge of device current;
secondly, an off-state characteristic test is carried out through the suspended source end, and the first section breakdown disappears;
thirdly, a high electric field region is formed near the source end connected field plate close to the drain electrode by performing two-dimensional simulation on the device channel;
and when the power source is in an off state, electrons are injected from the source end and flow through the body region, and when the electrons pass through a channel high electric field region corresponding to the edge of the source end connected field plate, the electrons are accelerated by an electric field to obtain set kinetic energy, so that collision ionization is generated, electron hole pairs are correspondingly generated, current is increased rapidly, and first breakdown is caused.
The above-mentioned embodiments are only preferred embodiments of the present invention, and all equivalent changes and modifications made within the scope of the claims of the present invention should be covered by the claims of the present invention.
Claims (1)
1. A method for testing reliability of reverse bias accelerated stress of a gallium nitride power device is characterized by comprising the following steps:
(1) Testing the off-state characteristics of the device at normal temperature;
(2) Obtaining the off-state current characteristic of the device;
(3) Testing the off-state characteristics of the suspended source end;
(4) Acquiring channel electric field distribution by utilizing Sentaurus simulation;
(5) Acquiring the occurrence reason of the impact ionization by combining the experimental result;
(6) Then dividing the mixture into two paths, and continuing the step (2) for one path;
(7) Under normal temperature, avoiding the influence of impact ionization intervention, and selecting voltage before impact ionization occurs to perform a bias test;
(8) Obtaining the corresponding service life of the device at normal temperature, and drawing a Weibull distribution diagram at normal temperature;
(9) Estimating the service life at normal temperature according to the Weibull distribution diagram;
(10) Continuing to the step (6), heating the other path to 150 ℃ by using a temperature changing table;
(11) Performing off-state characteristic test at 150 ℃;
(12) Obtaining the 150 ℃ off-state current characteristic of the device;
(13) Avoiding the influence of collision ionization intervention at high temperature, and selecting voltage before collision ionization to perform bias test;
(14) Obtaining the corresponding service life of the device at high temperature, and drawing a Weibull distribution diagram at high temperature;
(15) Estimating the service life at high temperature according to the Weibull distribution diagram;
(16) And (5) continuing the step (9) to obtain the real service life of the device under normal temperature and high temperature.
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Citations (6)
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