CN106898656A - Low-capacitance TVS diode and its manufacture method - Google Patents
Low-capacitance TVS diode and its manufacture method Download PDFInfo
- Publication number
- CN106898656A CN106898656A CN201710328379.2A CN201710328379A CN106898656A CN 106898656 A CN106898656 A CN 106898656A CN 201710328379 A CN201710328379 A CN 201710328379A CN 106898656 A CN106898656 A CN 106898656A
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- injection region
- type
- type injection
- layer
- epitaxial layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000002347 injection Methods 0.000 claims description 62
- 239000007924 injection Substances 0.000 claims description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 230000001052 transient effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention discloses a kind of low-capacitance TVS diode and its manufacture method, propose a kind of low-capacitance TVS diode, on the basis of traditional TVS, make that three TVS are integrated to be parallel to together by process modification, reduce device parasitic electric capacity, device area is small, and technology difficulty is low, reduces device manufacturing cost.The protection feature and reliability of the TVS device after improvement are obtained for lifting.
Description
Technical field
The present invention relates to conductor chip manufacturing process technology field, in particular, it is related to a kind of pole of low-capacitance TVS two
Pipe and its manufacture method.
Background technology
Transient Voltage Suppressor (TVS) is a kind of for protecting sensitive semiconductor device, it is exempted from transient voltage surge
Destruction and specially designed solid-state semiconductor device, it has a clamp, and coefficient is small, small volume, response are fast, leakage current is small and reliable
The advantages of property is high, thus be widely used on voltage transient and carrying out surge protection.Static discharge (ESD) and other one
The transient voltage that a little voltage surge forms occur at random, is typically found in various electronic devices.With semiconductor devices increasingly
Tend to miniaturization, high density and multi-functional, electronic device becomes increasingly susceptible to the influence of voltage surge, even results in fatal
Injury.Various voltage surges can induce transient current spikes, Transient Voltage Suppressor (TVS) to lead to from static discharge to lightning etc.
Protection sensitive circuit is commonly used to be impacted by surge.Based on different applications, Transient Voltage Suppressor can be by changing wave
Discharge path and the clamp voltage of itself is gushed to play circuit protection effect.For
Low-capacitance TVS is applied to the protection device of high-frequency circuit, because it can reduce interference of the parasitic capacitance to circuit,
Reduce the decay of high-frequency circuit signal.In order to improve the reverse characteristic of TVS, device reliability is improved.Generally use protection ring knot
Structure and Metal field plate structure.But the additional capacitor that both structures are introduced is big, and device area is big, reduces device and carries
Device manufacturing cost high.
The content of the invention
In view of the shortcomings of the prior art, it is an object of the invention to provide a kind of low-capacitance TVS diode and its system
Method is made, the low-capacitance TVS diode and its manufacture method can improve device performance, and reduce device manufacturing cost.
To achieve the above object, the invention provides following technical scheme：A kind of low-capacitance TVS diode, including be located at
The metal layer on back at the back side, is provided with the P+ substrate layers that P-type silicon piece is made on the metal layer on back, set on the P+ substrate layers
P-type epitaxial layer is equipped with, dielectric layer is provided with the p-type epitaxial layer, front metal layer is provided with the dielectric layer；
Also include the first N-type injection region, the second N-type injection region and the first p-type injection region；
The p-type epitaxial layer is run through in the first N-type injection region, and the P+ substrates are inserted in the first N-type injection region
Layer, during the p-type epitaxial layer is inserted in the second N-type injection region on the contact surface from the p-type epitaxial layer with the dielectric layer,
The first p-type injection region is located in the second N-type injection region, and on the contact surface of the second N-type injection region and dielectric layer
In inserting the second N-type injection region；
Be provided with two medium skies on the dielectric layer, the front metal layer by the medium holes respectively with a P
Type injection region and the first N-type injection region connect.
The present invention is further arranged to：A kind of manufacture method for manufacturing above-mentioned low-capacitance TVS diode：
A, the preparation p-type epitaxial layer above the P+ substrate layers that P-type silicon piece is made, and to being carried out above p-type epitaxial layer
Thermal oxide forms silica oxide layer；
B, on silica oxide layer photoresist is used as mask；
C, by dry/wet etch to form the first N-type injection region on a photoresist；
D, removal photoresist, N-type injection, thermal diffusion are carried out to the first N-type injection region；
E, using photoresist as mask, dry/wet etches to form the first p-type injection region, and the first p-type injection region is entered
Row p-type is injected；
F, using photoresist as mask, dry/wet etches to form the second N-type injection region, and to the second N-type injection region
Carry out N-type injection；
G, removal photoresist and silica oxide layer；
H, on p-type epitaxial layer prepare dielectric layer；
I, medium holes are prepared, back metal is prepared on dielectric layer.
In sum, the invention has the advantages that：The present invention proposes a kind of low-capacitance TVS diode, is passing
On the basis of system TVS, make that three TVS are integrated to be parallel to together by process modification, reduce device parasitic electric capacity, device area
Small, technology difficulty is low, reduces device manufacturing cost.The protection feature and reliability of the TVS device after improvement are obtained for and carry
Rise.
Brief description of the drawings
Fig. 1 is the equivalent circuit diagram in embodiment；
Fig. 2 is the structural representation of a steps；
Fig. 3 is the structural representation of b step；
Fig. 4 is the structural representation of step c；
Fig. 5 is the structural representation of Step d；
Fig. 6 is the structural representation of step e；
Fig. 7 is the structural representation of f steps；
Fig. 8 is the structural representation of g steps；
Fig. 9 is the structural representation of h steps；
Figure 10 is the structural representation of i steps.
In figure：1st, metal layer on back；2nd, P+ substrate layers；3rd, p-type epitaxial layer；4th, dielectric layer；5th, front metal layer；6th, first
N-type injection region；7th, the second N-type injection region；8th, the first p-type injection region；9th, medium holes；10th, silica oxide layer；11st, photoetching
Glue.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment：A kind of low-capacitance TVS diode and its manufacture method, the wherein structure of the low-capacitance TVS diode are such as
Shown in Figure 10, its equivalent circuit diagram is as shown in Figure 1.
Including the metal layer on back positioned at the back side, the P+ substrate layers that P-type silicon piece is made, P+ linings are provided with metal layer on back
P-type epitaxial layer is provided with bottom, dielectric layer is provided with p-type epitaxial layer, front metal layer is provided with dielectric layer.
Also include the first N-type injection region, the second N-type injection region and the first p-type injection region.
P-type epitaxial layer, and the first N-type injection region insertion P+ substrate layers, the second N-type injection region are run through in first N-type injection region
From p-type epitaxial layer is inserted on the contact surface of p-type epitaxial layer and dielectric layer, the first p-type injection region is located at the second N-type injection region
In, and on the contact surface of the second N-type injection region and dielectric layer insert the second N-type injection region.
Be provided with two medium skies on dielectric layer, front metal layer by medium holes respectively with the first p-type injection region and the
One N-type injection region connects.
The manufacture method for manufacturing the low-capacitance TVS diode is as follows：
A, as shown in Fig. 2 prepare p-type epitaxial layer above the P+ substrate layers that P-type silicon piece is made, and to p-type epitaxial layer
Above carry out thermal oxide formed silica oxide layer；
B, as shown in figure 3, using photoresist on silica oxide layer as mask；
C, as shown in figure 4, etching to form the first N-type injection region on a photoresist by dry/wet；
D, as shown in figure 5, removal photoresist, N-type injection, thermal diffusion are carried out to the first N-type injection region；
E, as shown in fig. 6, using photoresist as mask, dry/wet etches to form the first p-type injection region, to a P
Type injection region carries out p-type injection；
F, as shown in fig. 7, using photoresist as mask, dry/wet etches to form the second N-type injection region, and to
Two N-type injection regions carry out N-type injection；
G, as shown in figure 8, removal photoresist and silica oxide layer；
H, as shown in figure 9, preparing dielectric layer on p-type epitaxial layer；
I, as shown in Figure 10, prepare medium holes, back metal is prepared on dielectric layer.
In sum：The present invention proposes a kind of low-capacitance TVS diode, on the basis of traditional TVS, by process modification
Make that three TVS are integrated to be parallel to together, reduce device parasitic electric capacity, device area is small, and technology difficulty is low, reduces device system
Cause this
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (2)
1. a kind of low-capacitance TVS diode, it is characterised in that：
Including the metal layer on back positioned at the back side, the P+ substrate layers that P-type silicon piece is made are provided with the metal layer on back, it is described
P-type epitaxial layer is provided with P+ substrate layers, dielectric layer is provided with the p-type epitaxial layer, front is provided with the dielectric layer
Metal level；
Also include the first N-type injection region, the second N-type injection region and the first p-type injection region；
The p-type epitaxial layer is run through in the first N-type injection region, and the P+ substrate layers, institute are inserted in the first N-type injection region
State in inserting the p-type epitaxial layer on contact surface of the second N-type injection region from the p-type epitaxial layer with the dielectric layer, it is described
First p-type injection region is located in the second N-type injection region, and is inserted on the contact surface of the second N-type injection region and dielectric layer
In second N-type injection region；
Two medium holes are provided with the dielectric layer, the front metal layer is noted with the first p-type respectively by the medium holes
Enter area and the connection of the first N-type injection region.
2. the manufacture method of the low-capacitance TVS diode described in a kind of manufacturing claims 1, it is characterised in that：
A, the preparation p-type epitaxial layer above the P+ substrate layers that P-type silicon piece is made, and to carrying out hot oxygen above p-type epitaxial layer
Change forms silica oxide layer；
B, on silica oxide layer photoresist is used as mask；
C, by dry/wet etch to form the first N-type injection region on a photoresist；
D, removal photoresist, N-type injection, thermal diffusion are carried out to the first N-type injection region；
E, using photoresist as mask, dry/wet is etched to form the first p-type injection region, and P is carried out to the first p-type injection region
Type injects；
F, using photoresist as mask, dry/wet is etched to form the second N-type injection region, and the second N-type injection region is carried out
N-type is injected；
G, removal photoresist and silica oxide layer；
H, on p-type epitaxial layer prepare dielectric layer；
I, medium holes are prepared, back metal is prepared on dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710328379.2A CN106898656A (en) | 2017-05-11 | 2017-05-11 | Low-capacitance TVS diode and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710328379.2A CN106898656A (en) | 2017-05-11 | 2017-05-11 | Low-capacitance TVS diode and its manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106898656A true CN106898656A (en) | 2017-06-27 |
Family
ID=59197375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710328379.2A Pending CN106898656A (en) | 2017-05-11 | 2017-05-11 | Low-capacitance TVS diode and its manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106898656A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108063138A (en) * | 2017-12-14 | 2018-05-22 | 深圳市晶特智造科技有限公司 | Transient Voltage Suppressor and preparation method thereof |
| CN109360822A (en) * | 2018-09-19 | 2019-02-19 | 盛世瑶兰（深圳）科技有限公司 | A kind of Transient Voltage Suppressor and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976028A (en) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | ESD protection element |
| CN103050545A (en) * | 2011-10-14 | 2013-04-17 | 上海韦尔半导体股份有限公司 | TVS (Transient Voltage Suppressor) diode and manufacturing method thereof |
-
2017
- 2017-05-11 CN CN201710328379.2A patent/CN106898656A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1976028A (en) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | ESD protection element |
| CN103050545A (en) * | 2011-10-14 | 2013-04-17 | 上海韦尔半导体股份有限公司 | TVS (Transient Voltage Suppressor) diode and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108063138A (en) * | 2017-12-14 | 2018-05-22 | 深圳市晶特智造科技有限公司 | Transient Voltage Suppressor and preparation method thereof |
| CN108063138B (en) * | 2017-12-14 | 2020-12-22 | 嘉兴市龙锋市政建设有限公司 | Transient voltage suppressor and manufacturing method thereof |
| CN109360822A (en) * | 2018-09-19 | 2019-02-19 | 盛世瑶兰（深圳）科技有限公司 | A kind of Transient Voltage Suppressor and preparation method thereof |
| CN109360822B (en) * | 2018-09-19 | 2021-04-20 | 张辉 | Transient voltage suppressor and manufacturing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170627 |