CN106896302A - GIS device low-voltage conductor surface field strength meter and method - Google Patents

GIS device low-voltage conductor surface field strength meter and method Download PDF

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Publication number
CN106896302A
CN106896302A CN201710177530.7A CN201710177530A CN106896302A CN 106896302 A CN106896302 A CN 106896302A CN 201710177530 A CN201710177530 A CN 201710177530A CN 106896302 A CN106896302 A CN 106896302A
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CN
China
Prior art keywords
resistance
gis device
gis
shell
voussoir
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CN201710177530.7A
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Chinese (zh)
Inventor
卢斌先
杨颖�
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North China Electric Power University
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North China Electric Power University
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Priority to CN201710177530.7A priority Critical patent/CN106896302A/en
Publication of CN106896302A publication Critical patent/CN106896302A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1254Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of gas-insulated power appliances or vacuum gaps
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12Measuring electrostatic fields or voltage-potential

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

The invention discloses a kind of GIS device low-voltage conductor surface field strength measurement method for belonging to conductive surface technical field of electric field measurement.Electric field intensity measuring device structure is fixed on base for GIS device shell by short support, and high-pressure conductor is supported on GIS device housing center by the long stent on base, one voussoir of cutting in the middle of shell, and is supported in the original location with insulating materials;Voussoir connects 10 kilo-ohms of resistance, and resistance eutral grounding, resistance two ends connection amplifying circuit;Amplifying circuit is connected with display;Electric field intensity measuremenrt is on high-pressure conductor plus the high-tension electricity of exchange 220kV, and the voltage signal at resistance two ends is input to amplifying circuit, the reading of electric-field intensity is shown over the display by cable.The present invention, for improving GIS built-in electrical insulations intensity and research GIS device internal flaw and the relation of electric-field intensity, has great importance by the electric Field Calculation to GIS device internal flaw and analysis, and by verification experimental verification.

Description

GIS device low-voltage conductor surface field strength meter and method
Technical field
The invention belongs to conductive surface technical field of electric field measurement, more particularly to a kind of GIS device low-voltage conductor surface electricity Field intensity measuring method.Specifically research GIS device inside typical defect shelf depreciation develops the relation with electric-field intensity.
Background technology
Gas insulated combined electrical equipment (GIS, Gas Insulated Switchgear) has small volume, integrated and installation The characteristics of facilitating, is had a wide range of applications in transformer station in power system.With line voltage grade and power system capacity Be continuously increased, GIS device internal fault also occurs again and again.Therefore, the device is put for the part caused by GIS internal flaws The research of electricity has great importance.Shelf depreciation is both to cause the tendency and the form of expression of apparatus insulated deterioration, is caused again The reason for apparatus insulated further deterioration, ultimately result in device interior and puncture or creeping discharge, by electric power enterprise Pay close attention to.
With the development of power grid construction, due to the limitation of site condition, geological state and environmental condition in transformer substation construction, Situation using GIS device is more and more, and more and more in the GIS device of operation at present in network system, to GIS device For, it might even be possible to say to most of SF6,For air insulating device, its insulation defect is to cause the main original of equipment fault Cause.Due to the long-term operation under voltage levels environment of GIS device and under the action of various High-Voltage Electrical Appliances operating mechanisms, can lead GIS device internal flaw is caused, and then destroys GIS device insulating properties.Due to SF6,Gas isolated breakdown voltage is then between electrode Electric-field intensity it is closely relevant, therefore for research GIS device internal flaw and electric-field intensity relation, with important meaning Justice, by the electric Field Calculation to GIS device internal flaw and analyzing and by verification experimental verification, it will be appreciated that GIS Electric Field Distribution feelings Condition, improves GIS built-in electrical insulation intensity.
The content of the invention
It is an object of the invention to provide a kind of GIS device low-voltage conductor surface field strength meter and method, it is special Levy and be, measuring process includes:
(1) measurement apparatus are set up:GIS device shell is fixed on base by short support, and high-pressure conductor is by base Long stent is supported on GIS device housing center, the cutting 0.8m in the middle of shell2Voussoir, insulation position is carried out to voussoir edge Supported in the original location with insulating materials after reason;10 kilo-ohms of resistance, and resistance eutral grounding are connected from voussoir extraction wire, resistance two ends lead to Cross cable connection amplifying circuit;Amplifying circuit is connected with display;
(2) shell, the Grounding of resistance are checked;
(3) high-tension electricity of exchange 220kV is added on high-pressure conductor,
(4) voltage signal at resistance two ends is input to amplifying circuit by cable, and electric-field intensity is shown over the display Reading.
The beneficial effects of the invention are as follows by the electric Field Calculation to GIS device internal flaw and analysis, and by testing Card, it will be appreciated that GIS Electric Field Distribution situations, for improving GIS built-in electrical insulations intensity and research GIS device internal flaw and electric field The relation of intensity, has great importance.The method have the advantages that simply, low cost, floor space it is small, flexible.
Brief description of the drawings
Fig. 1 is GIS device low-voltage conductor surface field strength meter schematic diagram.
Fig. 2 is the voussoir schematic diagram of cutting.
Fig. 3 show resistance two ends electric field intensity measuremenrt value curve corresponding with theoretical value size
Specific embodiment
The present invention is to provide a kind of GIS device low-voltage conductor surface field strength meter and method, with reference to attached Figure is explained to the present invention.
Fig. 1 show GIS device low-voltage conductor surface field strength meter schematic diagram, and the measurement apparatus set for GIS Standby shell 2 is fixed on base 10 by short support 9, and high-pressure conductor 1 is supported on outside GIS device by long stent 8 on base 10 The center of shell 2, the cutting 0.8m in the middle of shell 22Voussoir 3 (as shown in Figure 2), after carrying out insulation processing to the edge of voussoir 3 Supported in the original location with insulating materials 11;10 kilo-ohms of resistance 4 is connected from the extraction wire of voussoir 3, and resistance 4 is grounded, the two ends of resistance 4 Amplifying circuit 6 is connected by cable 5;Amplifying circuit 6 is connected with display 7.
GIS device low-voltage conductor surface field ionization meter principle is:GIS internal high voltage conductors 1 are passed through exchange 220kV's High-tension electricity, shell 2 is grounded.The cutting 0.8m in the middle of shell 22Voussoir 3, and to voussoir edge carry out insulation 11 process.From The extraction wire of voussoir 3, the other end is grounded by 10 kilo-ohms of resistance 4, and the voltage signal at the two ends of resistance 4 is input into by cable 5 To amplifying circuit 6, the reading of electric-field intensity is shown on the display 7.
Fig. 3 show resistance two ends electric field intensity measuremenrt value curve corresponding with theoretical value size.Experimental provision is single-phase Integration model, high-pressure conductor radius is 70mm, and length is 1m;Grounding shell radius 168mm, length 1m;High-pressure conductor is given respectively Apply the alternating voltage of 1-10kV, the electric-field intensity size at measurement resistance two ends;Wherein, table 1 is the survey of resistance two ends electric-field intensity The size of value and theoretical value;Solid line is expressed as theoretical value in Fig. 3, and dotted line is expressed as measured value, and the two is closely;Thus see The experimental provision measurement gone out in embodiment is substantially accurate.Therefore, can accurately to obtain low-voltage conductor surface field strong for the present invention Angle value.
The numerical value of the resistance two ends electric field intensity measuremenrt value of table 1 and theoretical value

Claims (2)

1. a kind of GIS device low-voltage conductor surface field strength meter, it is characterised in that electric field intensity measuring device structure For GIS device shell is fixed on base by short support, high-pressure conductor is supported on GIS device shell by long stent on base Center, the cutting 0.8m in the middle of shell2Voussoir, be supported on original with insulating materials after insulation processing is carried out to voussoir edge Position;10 kilo-ohms of resistance, and resistance eutral grounding are connected from voussoir extraction wire, resistance two ends pass through cable connection amplifying circuit;Put Big circuit is connected with display.
2. a kind of GIS device low-voltage conductor surface field strength measurement method, it is characterised in that measuring process includes:
(1) measurement apparatus are set up:
(2) shell, the Grounding of resistance are checked;
(3) high-tension electricity of exchange 220kV is added on high-pressure conductor,
(4) voltage signal at resistance two ends is input to amplifying circuit by cable, and the reading of electric-field intensity is shown over the display.
CN201710177530.7A 2017-03-23 2017-03-23 GIS device low-voltage conductor surface field strength meter and method Pending CN106896302A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710177530.7A CN106896302A (en) 2017-03-23 2017-03-23 GIS device low-voltage conductor surface field strength meter and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710177530.7A CN106896302A (en) 2017-03-23 2017-03-23 GIS device low-voltage conductor surface field strength meter and method

Publications (1)

Publication Number Publication Date
CN106896302A true CN106896302A (en) 2017-06-27

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Application Number Title Priority Date Filing Date
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Country Status (1)

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CN (1) CN106896302A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110596553A (en) * 2019-10-10 2019-12-20 华北电力大学 Transformer on-line monitoring measuring device
CN111089999A (en) * 2020-02-10 2020-05-01 华北电力大学 Parallel AC high-voltage line voltage measuring device and method
CN111273070A (en) * 2020-02-10 2020-06-12 华北电力大学 Tandem type alternating-current high-voltage bus measuring device and method
CN111948719A (en) * 2020-08-24 2020-11-17 国网宁夏电力有限公司电力科学研究院 GIS internal foreign matter diagnosis device and diagnosis method
CN112904253A (en) * 2021-01-15 2021-06-04 华北电力大学 Electronic measuring device with temperature self-calibration function

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790041A (en) * 2004-12-16 2006-06-21 日本Ae帕瓦株式会社 Method and system for monitoring partial discharge in gas-insulated apparatus
CN201281725Y (en) * 2008-10-27 2009-07-29 陕西电力科学研究院 Fiber-optical type voltage measurement device
CN102121948A (en) * 2010-12-07 2011-07-13 国家电网公司 System for measuring transient shell voltage of gas insulated switchgear
CN102608394A (en) * 2012-04-01 2012-07-25 华北电力大学 Line corona current measurement system and method
CN103091609A (en) * 2013-01-09 2013-05-08 中国电力科学研究院 Performance detecting system and method thereof of gas insulated substation (GIS) partial discharge on-line monitoring device
CN105606979A (en) * 2016-03-23 2016-05-25 广州供电局有限公司 Device for simulating and detecting local discharge of GIS (Geographic Information System) equipment
CN106443206A (en) * 2016-10-24 2017-02-22 广州供电局有限公司 Measurement method and measurement device of electric field intensity at high-voltage wire surface

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790041A (en) * 2004-12-16 2006-06-21 日本Ae帕瓦株式会社 Method and system for monitoring partial discharge in gas-insulated apparatus
CN201281725Y (en) * 2008-10-27 2009-07-29 陕西电力科学研究院 Fiber-optical type voltage measurement device
CN102121948A (en) * 2010-12-07 2011-07-13 国家电网公司 System for measuring transient shell voltage of gas insulated switchgear
CN102608394A (en) * 2012-04-01 2012-07-25 华北电力大学 Line corona current measurement system and method
CN103091609A (en) * 2013-01-09 2013-05-08 中国电力科学研究院 Performance detecting system and method thereof of gas insulated substation (GIS) partial discharge on-line monitoring device
CN105606979A (en) * 2016-03-23 2016-05-25 广州供电局有限公司 Device for simulating and detecting local discharge of GIS (Geographic Information System) equipment
CN106443206A (en) * 2016-10-24 2017-02-22 广州供电局有限公司 Measurement method and measurement device of electric field intensity at high-voltage wire surface

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110596553A (en) * 2019-10-10 2019-12-20 华北电力大学 Transformer on-line monitoring measuring device
CN111089999A (en) * 2020-02-10 2020-05-01 华北电力大学 Parallel AC high-voltage line voltage measuring device and method
CN111273070A (en) * 2020-02-10 2020-06-12 华北电力大学 Tandem type alternating-current high-voltage bus measuring device and method
CN111089999B (en) * 2020-02-10 2021-04-13 华北电力大学 Parallel AC high-voltage line voltage measuring device and method
CN111948719A (en) * 2020-08-24 2020-11-17 国网宁夏电力有限公司电力科学研究院 GIS internal foreign matter diagnosis device and diagnosis method
CN111948719B (en) * 2020-08-24 2024-06-04 国网宁夏电力有限公司电力科学研究院 GIS internal foreign matter diagnosis device and diagnosis method
CN112904253A (en) * 2021-01-15 2021-06-04 华北电力大学 Electronic measuring device with temperature self-calibration function

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Application publication date: 20170627