CN205643609U - Inside multiple partial discharge's of GIS analogue means - Google Patents
Inside multiple partial discharge's of GIS analogue means Download PDFInfo
- Publication number
- CN205643609U CN205643609U CN201620361319.1U CN201620361319U CN205643609U CN 205643609 U CN205643609 U CN 205643609U CN 201620361319 U CN201620361319 U CN 201620361319U CN 205643609 U CN205643609 U CN 205643609U
- Authority
- CN
- China
- Prior art keywords
- gis
- electrode
- pedestal
- partial discharge
- shelf depreciation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Testing Relating To Insulation (AREA)
Abstract
The utility model discloses an inside multiple partial discharge's of GIS analogue means, include GIS air chamber and the generating line that is located the GIS air chamber, at least, be equipped with the inside partial discharge simulation experiment device of a GIS between generating line and GIS shell, the inside partial discharge simulation experiment device of GIS includes the high voltage electrode base, the ground electrode base and respectively with the high voltage electrode base, ground electrode base threaded connection's non -conductive support rod, high voltage electrode base and generating line conducting rod contact, ground electrode base and GIS shell contact, the high voltage electrode base passes through threaded connection brass base, the one or more partial discharge of brass pedestal connection simulate the electrode. The utility model discloses can simulate the inside multiple partial discharge defect that probably appears of 110kV GIS, under the pressurization service condition, produce stable partial discharge signal, be favorable to developing electrified scientific research that detects of GIS equipment partial discharge trouble and training study, have important value to avoiding GIS equipment accident.
Description
Technical field
This utility model belongs to electrical equipment technical field, is specifically related to a kind of GIS(Gas Insulated Switchgear, sulfur hexafluoride sealed combination electrical equipment) analog of internal multiple shelf depreciation.
Background technology
From the 80's of 20th century, GIS electric equipment is developed rapidly in China.GIS is divided into single-phase single-cylinder type and three-phase two kinds of forms of cartridge type altogether.Three-phase element and conductor are concentrated in a bigger cylinder by three-phase cartridge type altogether by " product " font layout, make phase insulation make full use of the superior insulating properties of SF6 gas.The advantages such as comparing the structure of single-phase single-cylinder type, it is little that it has overall volume, installs, overhauls conveniently, time-consuming.110KV electric pressure and bus can make three-phase cartridge type, 220KV and the above single-phase single-cylinder type of more employing altogether at present.
Although GIS device has the plurality of advantages such as floor space is little, reliability is high.But due to the totally enclosed characteristic of GIS device, there is also some shortcomings, after having an accident, trouble-shooting point and overhaul relatively difficult, during handling failure, power failure range is bigger than traditional open electric equipment, and the repair time is longer.Shelf depreciation is the internal tendency phenomenon that insulation breakdown occurs of GIS, and usual occurrence cause is: casting insulated internal existence cavity or impurity;Metal or insulating surface have tip or projection;Owing to installing accidentally or switching deciliter generation graininess or a thread metal particle, these microgranules can be attached to insulating surface or fall at outer casing bottom, the most mobile or irregular jump under the metal particle of outer casing bottom is at electric field action, shelf depreciation then can be produced during whereabouts with electric charge when metallic particles soars;Shelf depreciation is there is in metallic shield between contact.
Shelf depreciation is a breakneck signal for GIS device, slight shelf depreciation once occurs, as got rid of not in time, will cause serious insulation breakdown, cause serious consequence.
Summary of the invention
The purpose of this utility model is to provide the analog of the internal multiple shelf depreciation of a kind of GIS, and this utility model efficiently solves existing GIS device trouble-shooting point and overhauls relatively difficult technical problem.
This utility model is achieved through the following technical solutions:
The analog of the internal multiple shelf depreciation of a kind of GIS, including GIS air chamber and the bus being positioned at GIS air chamber, at least provided with the internal partial discharge simulation experiment device of a kind of GIS between bus and GIS shell.
Described bus is single-phase bus or A, B, C three-phase bus.
The internal partial discharge simulation experiment device of described GIS includes high-field electrode pedestal, ground electrode pedestal and the insulating support rod connected respectively with high-field electrode pedestal, ground electrode base thread, described high-field electrode pedestal and bus conductive rod contact, ground electrode pedestal and GIS shell contact, described high-field electrode pedestal is threaded connection pyrite pedestal, and described pyrite pedestal connects at least one shelf depreciation simulation electrode.
Described high-field electrode pedestal is connected with bus conductive rod by wire, and ground electrode pedestal is connected with adsorbent nacelle fixed screw by wire.
Described shelf depreciation simulation electrode is any one in corona defects simulation electrode, floating potential defects simulation electrode, free conducting particle defects simulation electrode or void defects simulation electrode.
Described corona defects simulation electrode is a metal draw point.
Described floating potential defects simulation electrode includes insulated support and the floating potentical body being positioned on insulated support.
Described free conducting particle defects simulation electrode is a spheric electrode, and described ground electrode pedestal is provided with a disk-shaped electrode, is provided with several free metal granules in described disk-shaped electrode, and described spheric electrode and disk-shaped electrode are placed in a lucite cylinder.
Described void defects simulation electrode is the spheric electrode I of a parcel epoxyresin insulator I, described ground electrode pedestal is provided with the spheric electrode II of parcel epoxyresin insulator II, being connected by epoxy bonds face between described epoxyresin insulator I and epoxyresin insulator II, described epoxy bonds face is provided with one or more air bubble.
This utility model compared with prior art, has a following obvious advantage:
This utility model is most important to the safe operation of equipment by the GIS equipment fault emulation test system of the detection research that fault has reappeared GIS inside typical defect, utilizes this set pilot system to carry out relevant simulation Technique Study and mainly possesses the feature of following several respects: 1. a whole set of pilot system outfit bus and includes the complete interval of all typical elements；2. this cover system can be at the continuous service under laboratory realizes rated voltage and rated current；3. this set pilot system can the operating condition of simulated field completely；4. the distinctive test section of this set experiment system design, can carry out fault reproduction in this test section；5. various live detection means can be utilized to collect the typical collection of illustrative plates of internal flaw.
This utility model provides a kind of GIS analog of internal multiple shelf depreciation, can simulate the multiple shelf depreciation defect being likely to occur inside 110kV GIS, such as corona defect, floating potential defect, free conducting particle defect or void defects.Under pressurization service condition, this analog can produce stable local discharge signal, thus provides theoretical foundation for GIS equipment condition diagnosing in operating conditions, the detection quantitative analysis of data, the qualitative analysis of fault type.This utility model is conducive to carrying out scientific research and the training and learning of GIS equipment partial discharge fault type, has important value to avoiding GIS device accident.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of the internal shelf depreciation experimental provision of GIS of band corona defects simulation electrode.
Fig. 3 is the structural representation of the internal shelf depreciation experimental provision of GIS of band floating potential defects simulation electrode.
Fig. 4 is the structural representation of the internal shelf depreciation experimental provision of GIS of band free conducting particle defects simulation electrode.
Fig. 5 is the structural representation of the internal shelf depreciation experimental provision of GIS of band void defects simulation electrode.
Fig. 6 is the test result figure pressurizeing the bus being connected with corona defects simulation electrode.
Fig. 7 is the test result figure pressurizeing the bus being connected with floating potential defects simulation electrode.
Fig. 8 is the test result figure pressurizeing the bus being connected with free conducting particle defects simulation electrode.
Fig. 9 is the test result figure pressurizeing the bus being connected with void defects simulation electrode.
Wherein, description of reference numerals is as follows:
1, GIS shell；2, bus；3, corona defects simulation electrode；4, floating potential defects simulation electrode；5, free conducting particle defects simulation electrode；6, high-field electrode pedestal；7, ground electrode pedestal；8, insulating support rod；9, nut；10, pyrite pedestal；11, metal draw point；12, insulated support；13, floating potentical body；14, spheric electrode；15, disk-shaped electrode；16, spheric electrode I；17, spheric electrode II；18, epoxyresin insulator I；19, epoxyresin insulator II；20, epoxy bonds face；21, air bubble；22, lucite cylinder.
Detailed description of the invention
As shown in Figure 1, GIS is three-phase cartridge type altogether, the analog of the internal multiple shelf depreciation of a kind of GIS includes GIS air chamber and is positioned at A, B, C three-phase bus 2 of GIS air chamber, is respectively equipped with the internal partial discharge simulation experiment device 3,4 and 5 of at least one GIS between A, B, C three-phase bus 2 and GIS shell 1.If GIS is single-phase single-cylinder type, between single-phase bus and GIS shell, it is provided with the internal partial discharge simulation experiment device of a kind of GIS.
Such as Fig. 2, shown in 3 and 4, the internal partial discharge simulation experiment device of GIS includes high-field electrode pedestal 6, ground electrode pedestal 7 and insulating support rod 8 threaded with high-field electrode pedestal 6, ground electrode pedestal 7 respectively, the relative distance between high-field electrode pedestal 6 and ground electrode pedestal 7 can be regulated so that high-field electrode pedestal 6 and bus conductive rod 2 contact, ground electrode pedestal 7 and GIS shell 1 contacts by adjusting nut 9, high-field electrode pedestal 6 is threaded connection pyrite pedestal 10, and pyrite pedestal 10 connects at least one shelf depreciation simulation electrode.For ensureing that high-field electrode pedestal is reliably connected high-pressure section, by wire, high-field electrode pedestal 6 is connected with bus conductive rod 2, for ensureing ground electrode pedestal 7 reliable ground, by wire, ground electrode pedestal 7 is connected with adsorbent nacelle fixed screw.
Above-mentioned shelf depreciation simulation electrode is any one in corona defects simulation electrode, floating potential defects simulation electrode, free conducting particle defects simulation electrode or void defects simulation electrode.As in figure 2 it is shown, corona defects simulation electrode is a metal draw point 11.As it is shown on figure 3, floating potential defects simulation electrode includes insulated support 12 and the floating potentical body 13 being positioned on insulated support.As shown in Figure 4, free conducting particle defects simulation electrode is a spheric electrode 14, ground electrode pedestal is provided with a disk-shaped electrode 15, and wherein disk-shaped electrode 15 is internal is placed with ten several metallic particles freely, and spheric electrode and disk-shaped electrode are placed in a lucite cylinder 22.As shown in Figure 5, void defects simulation electrode is the spheric electrode I 16 of a parcel epoxyresin insulator I 18, ground electrode pedestal is provided with the spheric electrode II 17 of parcel epoxyresin insulator II 19, being connected by epoxy bonds face 20 between epoxyresin insulator I 18 and epoxyresin insulator II 19, epoxy bonds face 20 is provided with one or more air bubble 21.
All there is a sprue gate blocked by metal board on the outer surface metal screen layer of each disc insulator of most GIS device, expose sprue gate by consulting to reject metal tag with producer.Through to GIS venting, original SF6 reclaim, install electrode model, evacuation, fill the operation such as SF6, sealing after, test the Partial discharge signal of each model.Fig. 6 is the test result figure pressurizeing the bus being connected with corona defects simulation electrode.Fig. 7 is the test result figure pressurizeing the bus being connected with floating potential defects simulation electrode.Fig. 8 is the test result figure pressurizeing the bus being connected with free conducting particle defects simulation electrode.Fig. 9 is the test result figure pressurizeing the bus being connected with void defects simulation electrode.
Technological means disclosed in this utility model scheme is not limited only to the technological means disclosed in above-mentioned embodiment, also includes the technical scheme being made up of above technical characteristic combination in any.It should be pointed out that, for those skilled in the art, on the premise of without departing from this utility model principle, it is also possible to make some improvements and modifications, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (8)
1. the analog of the internal multiple shelf depreciation of GIS, including GIS air chamber and the bus being positioned at GIS air chamber, it is characterized in that: at least provided with the internal partial discharge simulation experiment device of a kind of GIS between bus and GIS shell, the internal partial discharge simulation experiment device of described GIS includes high-field electrode pedestal, ground electrode pedestal and respectively with high-field electrode pedestal, the insulating support rod that ground electrode base thread connects, described high-field electrode pedestal and bus conductive rod contact, ground electrode pedestal and GIS shell contact, described high-field electrode pedestal is threaded connection pyrite pedestal, described pyrite pedestal connects at least one shelf depreciation simulation electrode.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 1, it is characterised in that: described bus is single-phase bus or A, B, C three-phase bus.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 1, it is characterised in that: described high-field electrode pedestal is connected with bus conductive rod by wire, and described ground electrode pedestal is connected with adsorbent nacelle fixed screw by wire.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 1, it is characterised in that: described shelf depreciation simulation electrode is any one in corona defects simulation electrode, floating potential defects simulation electrode, free conducting particle defects simulation electrode or void defects simulation electrode.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 4, it is characterised in that: described corona defects simulation electrode is a metal draw point.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 4, it is characterised in that: described floating potential defects simulation electrode includes insulated support and the floating potentical body being positioned on insulated support.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 4, it is characterized in that: described free conducting particle defects simulation electrode is a spheric electrode, described ground electrode pedestal is provided with a disk-shaped electrode, being provided with several free metal granules in described disk-shaped electrode, described spheric electrode and disk-shaped electrode are placed in a lucite cylinder.
The analog of the internal multiple shelf depreciation of a kind of GIS the most according to claim 4, it is characterized in that: described void defects simulation electrode is the spheric electrode I of a parcel epoxyresin insulator I, described ground electrode pedestal is provided with the spheric electrode II of parcel epoxyresin insulator II, being connected by epoxy bonds face between described epoxyresin insulator I and epoxyresin insulator II, described epoxy bonds face is provided with one or more air bubble.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620361319.1U CN205643609U (en) | 2016-04-26 | 2016-04-26 | Inside multiple partial discharge's of GIS analogue means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620361319.1U CN205643609U (en) | 2016-04-26 | 2016-04-26 | Inside multiple partial discharge's of GIS analogue means |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205643609U true CN205643609U (en) | 2016-10-12 |
Family
ID=57059292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620361319.1U Expired - Fee Related CN205643609U (en) | 2016-04-26 | 2016-04-26 | Inside multiple partial discharge's of GIS analogue means |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205643609U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107064756A (en) * | 2017-03-31 | 2017-08-18 | 中国南方电网有限责任公司电网技术研究中心 | The device of suspension electrode in a kind of Simulated GlS |
| CN108375721A (en) * | 2018-02-07 | 2018-08-07 | 国网上海市电力公司 | A kind of GIS interior insulators air blister defect model |
| WO2019162551A1 (en) | 2018-02-20 | 2019-08-29 | Fundacion Para El Fomento De La Innovacion Industrial | Method for assessing and qualifying the functional features of instruments for measurement and diagnosis of partial discharges and facility for generating series of reference pulses of partial discharges |
| CN110346698A (en) * | 2019-07-12 | 2019-10-18 | 国网上海市电力公司 | A kind of transformer composite local discharge source simulator |
| CN110346697A (en) * | 2019-07-12 | 2019-10-18 | 国网上海市电力公司 | A kind of GIS composite local discharge source simulator |
| CN112924820A (en) * | 2021-01-22 | 2021-06-08 | 国网山东省电力公司济南供电公司 | Visual analogue means of GIS full kind of internal defect |
| CN115206164A (en) * | 2022-06-27 | 2022-10-18 | 上海格鲁布科技有限公司 | True mode simulation device of many discharge sources |
-
2016
- 2016-04-26 CN CN201620361319.1U patent/CN205643609U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107064756A (en) * | 2017-03-31 | 2017-08-18 | 中国南方电网有限责任公司电网技术研究中心 | The device of suspension electrode in a kind of Simulated GlS |
| CN108375721A (en) * | 2018-02-07 | 2018-08-07 | 国网上海市电力公司 | A kind of GIS interior insulators air blister defect model |
| WO2019162551A1 (en) | 2018-02-20 | 2019-08-29 | Fundacion Para El Fomento De La Innovacion Industrial | Method for assessing and qualifying the functional features of instruments for measurement and diagnosis of partial discharges and facility for generating series of reference pulses of partial discharges |
| CN110346698A (en) * | 2019-07-12 | 2019-10-18 | 国网上海市电力公司 | A kind of transformer composite local discharge source simulator |
| CN110346697A (en) * | 2019-07-12 | 2019-10-18 | 国网上海市电力公司 | A kind of GIS composite local discharge source simulator |
| CN112924820A (en) * | 2021-01-22 | 2021-06-08 | 国网山东省电力公司济南供电公司 | Visual analogue means of GIS full kind of internal defect |
| CN115206164A (en) * | 2022-06-27 | 2022-10-18 | 上海格鲁布科技有限公司 | True mode simulation device of many discharge sources |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205643609U (en) | Inside multiple partial discharge's of GIS analogue means | |
| CN101458273B (en) | Sensor for measuring very fast transient overvoltage in GIS | |
| CN110161393A (en) | Intermittent electric arc test macro | |
| CN105742044A (en) | 500kV wide-transformation-ratio standard voltage transformer | |
| CN106324457B (en) | Withstand voltage testing device for insulating part | |
| CN205193117U (en) | Capacitance grading formula compact impulse generator | |
| CN109696604A (en) | A kind of concentric cylinder SF6Breakdown voltage experimental provision | |
| CN105954658A (en) | High-voltage cable GIS terminal test apparatus | |
| CN207909615U (en) | Lightning arrester with degradation display and live-line core replacement functions | |
| CN105372463A (en) | Capacitive graded compact impulse voltage generator | |
| CN109243909A (en) | A kind of gas-insulated vacuum load switch | |
| CN117741375A (en) | Sealed GIS partial discharge experiment simulation device | |
| CN204705696U (en) | SF 6discharge Simulation platform | |
| CN208953652U (en) | A kind of model for the fixed suspended discharge defect of Simulated GlS equipment | |
| CN208284319U (en) | A kind of 500kV direct current energy supply transformer | |
| CN104134502A (en) | Gapless metal oxide arrester | |
| CN209515344U (en) | A kind of GIS arrester | |
| CN108198675A (en) | Lightning arrester with degradation display function and core capable of being replaced in electrified mode and overhauling method thereof | |
| CN204789889U (en) | Multi -functional high -voltage testing device | |
| CN104931865B (en) | A kind of Voltage Cable Lines Construction pressure test insulating boot and test method | |
| Yu et al. | Study on partial discharge characteristics of typical defects of oil-paper capacitor bushing | |
| CN105738711A (en) | High-voltage electrode device used for space charge measurement | |
| CN201368894Y (en) | Sensor for measuring GIS internal very fast transient over-voltage | |
| CN206789408U (en) | A kind of gas-insulated transformer sleeve pipe | |
| CN206057490U (en) | A kind of GIS disc insulators surface defect model |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161012 Termination date: 20170426 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |