CN106895931A - A kind of flexibility stress sensor of high sensitivity and large deformation amount - Google Patents
A kind of flexibility stress sensor of high sensitivity and large deformation amount Download PDFInfo
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- CN106895931A CN106895931A CN201710291096.5A CN201710291096A CN106895931A CN 106895931 A CN106895931 A CN 106895931A CN 201710291096 A CN201710291096 A CN 201710291096A CN 106895931 A CN106895931 A CN 106895931A
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- stress sensor
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- metal film
- flexibility stress
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The flexibility stress sensor and its manufacture method of a kind of high sensitivity of the present invention and large deformation amount.By the present invention in that the nano thread structure of cluster is introduced in silicone rubber substrate with anodic oxidation aluminium formwork, spraying plating layer of metal film is used as conductive layer in the above, relative to the range of stretch that structureless substrate drastically increases flexibility stress sensor, while sensor has high sensitivity.Sensor of the invention slows down influence of the substrate tension to top metal film by the middle nano thread structure for existing, it is to avoid the generation of metal film penetrability slight crack and steeply rising for resistance value, so as to improve the sensor range of stretch based on metal film.Flexibility stress sensor of the invention has advantages below：With big range of stretch, maximum can detect 130% deformation；High sensitivity, sensitivity parameter (GaugeFactor) is up to 3.3 × 107, the deformation of original state minimum detectable 0.015%；Preparation flow is simple, low cost.
Description
Technical field
The present invention relates to flexibility stress sensor preparation technology, and in particular to one kind prepare and meanwhile have big range of stretch and
The method of highly sensitive flexibility stress sensor.
Background technology
With the fast development of artificial intelligence technology, requirement of the mankind to man-machine communication is increasingly improved, and is touched with apery class
The artificial flexible electronic device of the perceptional functions such as feel, smell, the sense of hearing, vision occupies extremely important position in this revolution
Put.Widely should because flexibility stress sensor makes it have in medical treatment ＆ health field in the advantage of the aspects such as detection pulse, heartbeat
With prospect, the core composition as artificial flexible electronic device.At present, the main way of manufacture pulling force sensor is to stretch
The deformation of sensor is converted into the change of resistance value in journey.One of which method is to fill conductive materials in the polymer, example
Such as Ag nano wires, carbon dust and metallic particles, so as to obtain conductive elastomer.Another method is that face is embedding on a flexible substrate
Enter or stacked conductive structure, such as compound of metal film, SWCN, conducting polymer and CNT etc. enters
And obtain the pulling force sensor with sandwich construction.Wherein by adhering to one layer of gold with high conductivity on flexible base
The transducer sensitivity highest with sandwich construction for belonging to film and preparing, but the range of stretch of this sensor is minimum, limitation
Its development and application.Therefore, in the urgent need to a kind of sensitivity is high, while detecting the big strain gauge of deformation quantity
The content of the invention
Present invention aim at：There is provided a kind of preparation process simply, be obviously improved the sensor stretching model based on metal film
Enclose while taking into account the new method of its sensitivity.By introducing one layer of nano thread structure between flexible substrates and metal film, greatly
Improve sensor ground range of stretch, while ensureing that it has higher sensitivity.
Concrete technical scheme of the invention is as follows：
A kind of flexibility stress sensor, including：
Substrate, the substrate is fabricated from a flexible material, and is received with cluster at least a portion at least one surface
The structure of rice noodles；
Conductive layer, the conductive layer includes the film of the high conductivity being formed on the nano thread structure of the substrate；
The flexibility stress sensor can occur elastic deformation under extraneous pulling force effect, by the slow of nano thread structure
Punching, the deformation of substrate is conducted to the metal conducting layer on surface, so as to be cracked inside it, so as to cause sensor resistance
Increase with stretch ratio and linearly increase.
Preferably, the flexible material is silicon rubber.
Preferably, the nanowire diameter is 200-600nm, and length is 1-6 μm, and the center spacing of nano wire is 250-
650nm。
Preferably, the conductive layer is included in the metal film deposited on the nano thread structure of the substrate.
Preferably, the metal species of the metal film include platinum, gold, copper, silver one or more.
Preferably, the thickness of the metal film is 10-1000nm.
The present invention provides a kind of method prepared according to the described flexibility stress sensor of one of above technical scheme, including
Following steps：
1) mixed prepolymer is prepared：Silicone oligomer, crosslinking agent and modifying agent are mixed；
2) silicone rubber substrate of the structure with cluster nano wire is prepared：By step 1) gained liquid prepolymer be added drop-wise to mould
On plate, polymerization crosslinking curing reaction is carried out, be then immersed in 70-90 DEG C of corrosive liquid 2-4 hours to go removing template to obtain
To the nano thread structure reunited；
3) metal conducting layer is prepared：Layer of metal film is deposited in substrate.
Preferably, the silicone oligomer is the dimethyl silicone polymer of end-vinyl that the degree of polymerization is 60 or so；Institute
State the dimethyl silicone polymer that crosslinking agent is terminal methyl；The modifying agent is ethyoxyl aq. polyethyleneimine.
Preferably, the ratio of the silicone oligomer, crosslinking agent and modifying agent is (5-10g):(0.5-1g):(10-40
μL)。
Preferably, it is provided with the hole array of cluster in the template, a diameter of 200-600nm in the hole, depth is 1-
6um, the spacing at hole center is 250-650nm.
Preferably, the step 3) deposited metal method include low-temperature sputter, evaporation coating.
Preferably, the template is anodic oxidation aluminium formwork.
By the present invention in that the nano thread structure of cluster is introduced in silicone rubber substrate with anodic oxidation aluminium formwork, thereon
Face spraying plating layer of metal film as conductive layer, relative to the stretching that structureless substrate drastically increases flexibility stress sensor
Scope, while sensor has high sensitivity.Sensor of the invention slows down base by the middle nano thread structure for existing
Bottom stretches influence to top metal film, it is to avoid the generation of metal film penetrability slight crack and steeply rising for resistance value, so that
Improve the sensor range of stretch based on metal film.Flexibility stress sensor of the invention has advantages below：With big drawing
Scope is stretched, maximum can detect 130% deformation；High sensitivity, sensitivity parameter (Gauge Factor) is up to
3.3×107, the deformation of original state minimum detectable 0.015%；Preparation flow is simple, low cost.
Brief description of the drawings
Fig. 1 is the surface texture micro image of flexibility stress sensor of the invention.
Fig. 2 is inventive sensor operation principle schematic diagram.
Fig. 3 has the sensor resistance of different length nanowire length with the change of stretch ratio for surface, and resistance is with drawing
Stretch ratio increase and it is linearly increasing.
Fig. 4 is the relation of sensor maximum tension scope and nano surface line length.
Fig. 5 is transducer sensitivity situation of change when nanowire length is 4 μm.
Fig. 6 is sensor gradient pulled out condition when nanowire length is 4 μm.
Fig. 7 is the gradient pulled out condition of sensor detection minimum stretch ratio when nanowire length is 4 μm.
Specific embodiment
Technical solution of the present invention is further described with reference to embodiment.
As shown in Figure 1-2, a kind of flexibility stress sensor of the invention, including：
Substrate, the substrate is fabricated from a flexible material, and is received with cluster at least a portion at least one surface
The structure of rice noodles；
Conductive layer, the conductive layer includes the film of the high conductivity being formed on the nano thread structure of the substrate.
As shown in Fig. 2 the flexibility stress sensor can occur elastic deformation under extraneous pulling force effect, by nanometer
The buffering of cable architecture, the deformation of substrate is conducted to the metal conducting layer on surface, so as to be cracked inside it, so as to cause to pass
Sensor resistance value increases with stretch ratio and linearly increases.
Preferably, the flexible material is silicon rubber.
Preferably, the nanowire diameter is 200-600nm, and length is 1-6 μm, and the center spacing of nano wire is 250-
650nm。
Preferably, the conductive layer is included in the metal film deposited on the nano thread structure of the substrate.
Preferably, the metal species of the metal film include platinum, gold, copper, silver one or more.
Preferably, the thickness of the metal film is 10-1000nm.
The present invention provides a kind of method prepared according to the described flexibility stress sensor of one of above technical scheme, including
Following steps：
1) mixed prepolymer is prepared：Silicone oligomer, crosslinking agent and modifying agent are mixed；
2) silicone rubber substrate of the structure with cluster nano wire is prepared：By step 1) gained liquid prepolymer be added drop-wise to mould
On plate, polymerization crosslinking curing reaction is carried out, be then immersed in 70-90 DEG C of corrosive liquid 2-4 hours to go removing template to obtain
To the nano thread structure reunited；
3) metal conducting layer is prepared：Layer of metal film is deposited in substrate, is connected and picoammeter (Keithley by wire
6487) electrode is connected, and its resistance value is measured under 5V voltages.
Preferably, the silicone oligomer is the dimethyl silicone polymer of end-vinyl that the degree of polymerization is 60 or so；Institute
State the dimethyl silicone polymer that crosslinking agent is terminal methyl；The modifying agent is ethyoxyl aq. polyethyleneimine.
Preferably, the ratio of the silicone oligomer, crosslinking agent and modifying agent is (5-10g):(0.5-1g):(10-40
μL)。
Preferably, the step 3) deposited metal method include low-temperature sputter, evaporation coating.
Preferably, the template is anodic oxidation aluminium formwork.
Embodiment 1
By the present invention in that the nano thread structure of cluster is introduced in silicone rubber substrate with anodic oxidation aluminium formwork (as schemed
1), spraying plating layer of metal film, as conductive layer, transducer sensitivity and drawing based on metal film is taken into account so as to reach in the above
Stretch the purpose of scope.Comprise the following steps that：
(1) silicone oligomer 10g, crosslinking agent 0.5g and the μ L of modifying agent 40 are taken, is uniformly mixed；
(2) take a small amount of gained mixture and be added drop-wise to bore dia for 200nm, hole depth is 1 μm, and hole center spacing is 250nm's
On anodic oxidation aluminium formwork, half an hour is stood, polymerization crosslinking curing reaction is carried out at a temperature of 110 DEG C 4 hours, then soaked
To remove removing template, obtain surface has a diameter of 200nm to bubble, and length is 1 μm, center within 2-4 hours in 70-90 DEG C of corrosive liquid
Spacing is the silicone rubber substrate of the cluster nano thread structure of 250nm；
(3) metal platinum that a thickness 90nm is deposited in low-temperature sputter substrate is used, you can obtain sensor of the present invention.
Embodiment 2
By the present invention in that the nano thread structure of cluster is introduced in silicone rubber substrate with anodic oxidation aluminium formwork (as schemed
1), spraying plating layer of metal film, as conductive layer, transducer sensitivity and drawing based on metal film is taken into account so as to reach in the above
Stretch the purpose of scope.Comprise the following steps that：
(1) silicone oligomer 10g, crosslinking agent 1g and the μ L of modifying agent 30 are taken, is uniformly mixed；
(2) take a small amount of gained mixture and be added drop-wise to bore dia for 400nm, hole depth is 4 μm, and hole center spacing is 450nm's
On anodic oxidation aluminium formwork, half an hour is stood, polymerization crosslinking curing reaction is carried out at a temperature of 110 DEG C 4 hours, then soaked
To remove removing template, obtain surface has a diameter of 400nm to bubble, and length is 4 μm, center within 2-4 hours in 70-90 DEG C of corrosive liquid
Spacing is the silicone rubber substrate of the cluster nano thread structure of 450nm；
(3) by evaporating the metallic gold of the thickness 1000nm of vapor deposition one in substrate, you can obtain biography of the present invention
Sensor.
Embodiment 3
By the present invention in that the nano thread structure of cluster is introduced in silicone rubber substrate with anodic oxidation aluminium formwork (as schemed
1), spraying plating layer of metal film, as conductive layer, transducer sensitivity and drawing based on metal film is taken into account so as to reach in the above
Stretch the purpose of scope.Comprise the following steps that：
(1) silicone oligomer 10g, crosslinking agent 0.5g and the μ L of modifying agent 40 are taken, is uniformly mixed；
(2) take a small amount of gained mixture and be added drop-wise to bore dia for 600nm, hole depth is 6 μm, and hole center spacing is 650nm's
On anodic oxidation aluminium formwork, half an hour is stood, polymerization crosslinking curing reaction is carried out at a temperature of 110 DEG C 4 hours, then soaked
To remove removing template, obtain surface has a diameter of 600nm to bubble, and length is 6 μm, center within 2-4 hours in 70-90 DEG C of corrosive liquid
Spacing is the silicone rubber substrate of the cluster nano thread structure of 650nm；
(3) argent that a thickness 10nm is deposited in electroplated substrates is used, you can obtain sensor of the present invention.
Fig. 4 is the relation of the sensor maximum tension scope in embodiment 1 and nano surface line length.Fig. 5 is embodiment 1
In method prepare nanowire length be 4 μm when transducer sensitivity situation of change.Fig. 6 is prepared by the method in embodiment 1
Nanowire length be 4 μm when sensor gradient pulled out condition.Fig. 7 is that nanowire length prepared by the method in embodiment 1 is 4
μm when sensor detect minimum stretch ratio gradient pulled out condition.Each figure more than is as can be seen that the product has greatly simultaneously
Range of stretch and high sensitivity.
Certainly, the present invention can also have various embodiments, in the case of without departing substantially from spirit of the invention and its essence, be familiar with
Those skilled in the art can disclosure of the invention make various corresponding changes and deformation, but these it is corresponding change and
Deformation should all belong to scope of the claims of the invention.
Claims (12)
1. a kind of flexibility stress sensor, including：
Substrate, the substrate is fabricated from a flexible material, and has cluster nano wire at least a portion at least one surface
Structure；
Conductive layer, the conductive layer includes the film of the high conductivity being formed on the nano thread structure of the substrate；
The flexibility stress sensor can occur elastic deformation under extraneous pulling force effect, and its resistance value is with the elastic shape
Become and change.
2. flexibility stress sensor according to claim 1, it is characterised in that the flexible material is silicon rubber.
3. flexibility stress sensor according to claim 1, it is characterised in that the nanowire diameter is 200-600nm,
Length is 1-6 μm, and the spacing at nano wire center is 250-650nm.
4. flexibility stress sensor according to claim 1, it is characterised in that the conductive layer is included in the substrate
The metal film deposited on the nano thread structure.
5. flexibility stress sensor according to claim 4, it is characterised in that the metal species of the metal film include
Platinum, gold, copper, silver one or more.
6. flexibility stress sensor according to claim 4, it is characterised in that the thickness of the metal film is 10-
1000nm。
7. a kind of method prepared according to one of claim 1-6 described flexibility stress sensor, comprises the following steps：
1) mixed prepolymer is prepared：Silicone oligomer, crosslinking agent and modifying agent are mixed；
2) silicone rubber substrate of the structure with cluster nano wire is prepared：By step 1) gained liquid prepolymer be added drop-wise to template
On, polymerization crosslinking curing reaction is carried out, 2-4 hours is then immersed in 70-90 DEG C of corrosive liquid to go removing template to obtain
The nano thread structure of reunion；
3) metal conducting layer is prepared：Layer of metal film is deposited in substrate.
8. method according to claim 7, it is characterised in that the silicone oligomer is end that the degree of polymerization is 60 or so
The dimethyl silicone polymer of vinyl；The crosslinking agent is the dimethyl silicone polymer of terminal methyl；The modifying agent is ethyoxyl
Aq. polyethyleneimine.
9. the method according to claim 7 or 8, it is characterised in that the silicone oligomer, crosslinking agent and modifying agent
Ratio is (5-10g):(0.5-1g):(10-40μL).
10. method according to claim 7, it is characterised in that uniform hole array, the hole are provided with the template
A diameter of 200-600nm, depth is 1-6um, and the spacing at hole center is 250-650nm.
11. methods according to claim 7, it is characterised in that the template is anodic oxidation aluminium formwork.
12. methods according to claim 7, it is characterised in that the step 3) deposited metal method include it is low
Temperature sputtering, evaporation coating.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107389234A (en) * | 2017-07-19 | 2017-11-24 | 华中科技大学 | A kind of piezoresistive transducer for making separation layer based on nano wire and preparation method thereof |
| CN108106639A (en) * | 2017-12-08 | 2018-06-01 | 合肥鑫晟光电科技有限公司 | A kind of flexible sensor and preparation method thereof |
| CN108955955A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of honeycomb structure pressure sensor and preparation method thereof |
| CN109884138A (en) * | 2019-03-27 | 2019-06-14 | 苗伟宁 | A kind of flexible humidity sensor with fast-response characteristic |
| CN109939347A (en) * | 2019-04-01 | 2019-06-28 | 华东交通大学 | A kind of design of perception enhancement device and its implementation of fusion function electro photoluminescence |
| CN110063724A (en) * | 2019-04-26 | 2019-07-30 | 清华大学 | Flexible biological electrode and preparation method thereof |
| CN110346033A (en) * | 2019-06-20 | 2019-10-18 | 重庆大学 | A kind of imitative spider flexibility low-frequency shock transducer |
| CN111251688A (en) * | 2020-03-23 | 2020-06-09 | 北京元芯碳基集成电路研究院 | Flexible conductive film, preparation method thereof and sensor |
| CN111351773A (en) * | 2018-12-21 | 2020-06-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas sensor based on swelling dynamic response and preparation method thereof |
| CN113237418A (en) * | 2021-04-30 | 2021-08-10 | 哈尔滨工业大学 | Preparation method and sensitivity regulation and control method of flexible sensor with multiple sensitivities |
| CN113432525A (en) * | 2021-06-15 | 2021-09-24 | 太原理工大学 | Preparation method and use method of sensor for monitoring deformation of anchor rod in real time |
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| CN108106639A (en) * | 2017-12-08 | 2018-06-01 | 合肥鑫晟光电科技有限公司 | A kind of flexible sensor and preparation method thereof |
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| CN108955955A (en) * | 2018-06-01 | 2018-12-07 | 五邑大学 | A kind of honeycomb structure pressure sensor and preparation method thereof |
| CN111351773A (en) * | 2018-12-21 | 2020-06-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas sensor based on swelling dynamic response and preparation method thereof |
| CN109884138A (en) * | 2019-03-27 | 2019-06-14 | 苗伟宁 | A kind of flexible humidity sensor with fast-response characteristic |
| CN109939347A (en) * | 2019-04-01 | 2019-06-28 | 华东交通大学 | A kind of design of perception enhancement device and its implementation of fusion function electro photoluminescence |
| CN110063724B (en) * | 2019-04-26 | 2022-03-18 | 清华大学 | Flexible bioelectrode and preparation method thereof |
| CN110063724A (en) * | 2019-04-26 | 2019-07-30 | 清华大学 | Flexible biological electrode and preparation method thereof |
| CN110346033A (en) * | 2019-06-20 | 2019-10-18 | 重庆大学 | A kind of imitative spider flexibility low-frequency shock transducer |
| CN111251688A (en) * | 2020-03-23 | 2020-06-09 | 北京元芯碳基集成电路研究院 | Flexible conductive film, preparation method thereof and sensor |
| CN111251688B (en) * | 2020-03-23 | 2022-01-25 | 北京元芯碳基集成电路研究院 | Flexible conductive film, preparation method thereof and sensor |
| CN113237418B (en) * | 2021-04-30 | 2022-02-08 | 哈尔滨工业大学 | Preparation method and sensitivity regulation and control method of flexible sensor with multiple sensitivities |
| CN113237418A (en) * | 2021-04-30 | 2021-08-10 | 哈尔滨工业大学 | Preparation method and sensitivity regulation and control method of flexible sensor with multiple sensitivities |
| CN113432525A (en) * | 2021-06-15 | 2021-09-24 | 太原理工大学 | Preparation method and use method of sensor for monitoring deformation of anchor rod in real time |
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