CN106887481A - 多结太阳能电池 - Google Patents
多结太阳能电池 Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 claims abstract description 18
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- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 24
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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Abstract
多结太阳能电池具有第一、第二和第三子电池,第一子电池具有锗,第二子电池具有比第一子电池大的带隙,第三子电池具有比第二子电池大的带隙,每个子电池具有发射极和基极,第二子电池包括化合物层,化合物至少具有GaInAsP,层厚度大于100纳米,层构造为发射极一部分和/或基极一部分和/或发射极与基极之间的空间电荷区一部分,第三子电池包括化合物层,化合物至少具有GaInP,层厚度大于100纳米,并且层构造为发射极一部分和/或基极一部分和/或位于发射极与基极之间的空间电荷区一部分,第二子电池中层的磷含量大于1%且小于45%,铟含量小50%,晶格常数小于5.84埃,第三子电池与第二子电池的层晶格常数差小于0.2%,两个子电池间不构造半导体键合。
Description
技术领域
本发明涉及一种多结太阳能电池。
背景技术
由文献“Current-matched triple-junction solar cell reaching 41.1%conversion efficiency under concentrated sunlight”(Guter等,Applied PhysicsLetters 94,223504(2009))已知一种多结太阳能电池(英语multi-junction solarcell)。公开的结构涉及一种具有高效率的、变质的Ga0.35In0.65P/Ga0.83In0.17As/Ge三结太阳能电池。在Ge基质或者说Ge子电池与Ga0.83In0.17As子电池之间使用包括GaYIn1-YAs的变质缓冲器。
此外,由文献“Development of Advanced Space Solar Cells at Spectrolab”(Bolsvert等,35th IEEE PVSC论文集,檀香山,夏威夷,2010,ISBN:978-1-4244-5891-2)已知基于半导体键合技术的GaInP/GaAs/GaInAsP/GaInAs四结太阳能电池和GaInP/AlGaInAs/GaAs/GaInAsP/GaInAs五结太阳能电池。另一种四结太阳能电池也由文献“Waferbonded four-junction GaInP/GaAs/GaInAsP/GaInAs concentrator solar cells with44.7%efficiency”(Dimroth等,Progr.Photovolt:Res.Appl.2014;22;277-282)已知。
在最后提到的两篇文献中以InP基质为出发点分别晶格匹配地沉积(abscheiden)具有约为1.0电子伏特的能量带隙的GaInAsP太阳能电池。上部的具有较高能量带隙的太阳能电池在第二沉积中以逆顺序的方式被制造在GaAs基质上。整个多结太阳能电池的形成通过两个外延晶片的直接半导体键合还有接着的GaAs基质移除以及其他过程步骤来实现。然而,制造过程是成本高昂的。
由DE 10 2012 004 734 A1已知一种既基于半导体键合技术又基于变质外延的GaInP/GaAs/GaInAs/缓冲器/Ge四结太阳能电池。制造成本由于两个必要的在两个单独基质上的沉积、必要的基质移除和必要的键合过程而一直还是高的。此外,由EP 1 134 813A2、EP 2 960 950 A1和DE 10 2005 000 767 A1已知不具有半导体键合的多结太阳能电池。
辐射硬度的优化、尤其也对于非常高的辐射剂量而言的辐射硬度的优化是在未来的宇航太阳能电池的研发中的重要的目的。除了提高开始效率或者说寿命开始(beginning-of-life,BOL)效率以外,目的也是提高寿命结束(end-of-life,EOL)效率。
此外,制造成本有决定性意义。本发明目前的工业标准通过晶体匹配的和变质的GaInP/GaInAs/Ge三结太阳能电池来得到。为此,通过使GaInP上部电池和GaInAs中间电池沉积到相对于GaAs基质和InP基质成本有利的Ge基质上来制造多结太阳能电池,其中,Ge基质形成下部电池。
发明内容
在这样的背景下,本发明的任务在于,提出一种进一步改进现有技术的装置。
该任务通过具有权利要求1的特征的多结太阳能电池来解决。本发明的有利构型是从属权利要求的主题。
根据本发明的主题提供一种堆叠状的多结太阳能电池,其具有第一子电池,其中,第一子电池主要具有锗,多结太阳能电池还具有第二子电池,其中,第二子电池具有比第一子电池大的带隙,多结太阳能电池还具有第三子电池,其中,第三子电池具有比第二子电池大的带隙,并且所述子电池中的每个子电池具有发射极和基极,并且其中,第二子电池包括具有化合物的层,所述化合物至少具有元素GaInAsP,并且所述层的厚度大于100纳米,并且所述层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区(Raumladungszone)的一部分,第三子电池具有带有化合物的层,所述化合物至少具有元素GaInP,并且所述层的厚度大于100纳米,并且所述层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分,并且在第二子电池中,所述层的磷含量大于1%且小于45%,并且所述层的铟含量小50%,并且所述层的晶格常数小于5.84埃,并且第三子电池的层的晶格常数与第二子电池的层的晶格常数的差别小于0.2%,并且多结太阳能电池的两个子电池之间不构造半导体键合。
理解为,尤其所说明的磷含量是就组别-V原子(Gruppe-V Atome)的总含量而言的。相应地,所提出的铟含量是就组别-III原子(Gruppe-III Atome)的总含量而言的。即在化合物Ga1-XInXAs1-YPY中,铟含量为值X且磷含量为值Y,并且由此对于50%的磷含量而言,Y值得出为0.5。
也注意到,两个直接相互跟随的子电池具有不同的元素。
注意到,以术语“半导体键合”尤其包括,在太阳能电池堆叠的任意两个子电池之间也不构造直接的半导体键合。即太阳能电池堆叠不由两个在不同基质上沉积并事后通过半导体键合来接合的子堆叠制成。尤其,太阳能电池堆叠不具有变质中间层。
理解为,多结太阳能电池单片地(monolithisch)构造。也注意到,在多结太阳能电池的太阳能电池中的每个太阳能电池中发生光子的吸收,并由此发生载流子的生成,其中,太阳光一直首先射入穿过具有最大带隙的子电池。换言之,太阳能电池堆叠首先通过最上部的子电池吸收光的短波份额。当前,光子则首先流过第二子电池并接着流过第一子电池。在等效电路图中,多结太阳能电池的单个太阳能电池以串联的形式接通,即具有最小电流的子电池限制地起作用。
也注意到,术语发射极和基极要么理解为相应的子电池中的p型掺杂层,要么理解为相应的子电池中的n型掺杂层。
也注意到,主要为锗理解为那些具有高于70%、优选高于90%且最高优选高于95%的锗份额的层。也注意到,当前,元素的化学缩写以与完整术语同义的方式来使用。
主要包括锗的第一子电池的构造的优点在于,第一子电池可简单地且成本有利地通过锗基质的活化借助于金属有机气相外延(MOVPE)过程期间的As扩散和/或P扩散进行制造。
尤其,对于第一子电池的构造而言,用于吸收光子的、数微米厚的、包括锗的层、即所谓的主体层(Bulk-Schichten)不必被外延地沉积。由此,第一子电池具有低制造成本。试验已表明,包括锗的子电池在具有1兆电子伏特电子的辐射下具有低退化。注意到,术语锗层理解为主要具有锗的层。
此外有利的是,如试验所表明的那样,由包括GaInAsP的化合物构成的第二子电池的构成相比于包括GaAs,GaInAs,AlGaAs和/或AlGaInAs的子电池具有更高的辐射稳定性。
试验出人意料地表明,在基于锗、即Germanium的多结太阳能电池的情况下,由于GaInAsP相对于GaInAs具有更高的辐射硬度,取代包括GaInAs的化合物而将主要包括GaInAsP的化合物用于第二子电池,对于磷含量低于45%而言已经是特别有利的。至今,GaInAsP的使用对专业人员显得是不恰当的,因为与锗晶体匹配地构造的GaInAsP子电池相比于至今所使用的GaInAs拥有更高的能量带隙。由此,在构造晶体匹配的GaInP/GaInAs(P)/Ge三结太阳能电池时,太阳能电池的也被称为BOL效率的开始效率降低。
另外的试验已表明,有利的是,将尽可能少的铝装入到子电池中。铝非常容易通过剩余湿气和/或氧气对反应器杂质或者源杂质作出反应,并且以已氧化的形式使材料品质恶化。由此,在制造多结太阳能电池时可提高收益。
在一实施方式中,多结太阳能电池正好具有三个子电池。附加地或者替代地,第二子电池的层具有1.2电子伏特到1.3电子伏特范围中的能量带隙。
在一改进方案中,第三子电池的层包括至少具有元素AlGaInP的化合物。
优点是,尤其GaInP或者AlGaInP化合物具有高辐射稳定性。
在另一改进方案中,在第一子电池和第二子电池之间构造有变质缓冲器,其中,所述缓冲器具有至少三个层的序列,并且晶格常数在所述序列中向第二子电池方向逐层提高。变质缓冲器的优点是,由此开启了相应的子电池的能量带隙方面的较大调整可能性,即在构造特别抗辐射(strahlungshart)的电池时的限制、如子电池的效率下降由于在磷含量提高的情况下而提高的能量带隙可补偿或者缓和。
在另一改进方案中,正好设置有四个子电池,其中,第二子电池的层具有1.43电子伏特到1.6电子伏特范围中的能量带隙。
在另一实施方式中,第四子电池被布置在第二子电池与第三子电池之间,并且第四子电池的层包括至少具有元素AlGaInAs或者GaInAsP的化合物。第四电池的层优选包括AlGaInAs或者GaInAsP的化合物。完全一般性地适用,第四子电池的层的厚度大于100纳米,并且第四子电池的层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
在另一实施方式中,第四子电池被布置在第一子电池与第二子电池之间,并且具有包括至少具有元素GaInAs或者GaInNAs的化合物的层,并且所述层的厚度大于100纳米,并且所述层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
在一改进方案中,构造有半导体镜,其中,半导体镜被布置在第一子电池与第二子电池之间和/或被布置在第一子电池与第四子电池之间。理解为,在另一改进方案中,另外的半导体镜可构造在另外的子电池之间。
在另一实施方式中,第二子电池的层或者第四子电池的层包括至少具有元素AlGaInAsP的化合物。
在一改进方案中,多结太阳能电池具有正好五个子电池和/或第二子电池的层具有1.2电子伏特到1.4电子伏特范围中的能量带隙或者1.43电子伏特到1.7电子伏特范围中的能量带隙。
在一实施方式中,第五子电池被布置在第二子电池与第三子电池之间。第五子电池具有一层,所述层具有至少包括元素AlGaInAs或者AlGaInP的化合物,其中,第五子电池的层的厚度大于100纳米,并且第五子电池的层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
在另一实施方式中,第五子电池被布置在第二子电池与第四子电池之间,并且具有带有一化合物的层,所述化合物至少具有元素GaInAs。第五子电池的层的厚度大于100纳米,并且所述层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
在一实施方式中,在第二太阳能电池中,层的磷含量小于35%,并且层的铟含量小45%,和/或层的晶格常数小于5.81埃。
在一改进方案中,在第二太阳能电池中,层的磷含量小于25%,并且层的铟含量小45%,和/或层的晶格常数小于5.78埃。
在一实施方式中,在第二太阳能电池中,层的厚度大于0.4微米或者大于0.8微米。
具有包括GaInP的发射极和一空间电荷区和/或包括GaInAs的基极的所谓的异质太阳能电池不被视为第二子电池。然而,具有包括GaInP的发射极和一空间电荷区和/或包括GaInAsP的基极的异质太阳能电池被视为第二子电池。
在另一改进方案中,当前第二子电池指的是,其不具有多重量子阱结构(Vielfach-Quantentopf-Struktur)。尤其,第二子电池不具有空间电荷区中的由GaInAs/GaAsP组成的周期。
在一改进方案中,第四子电池的层的晶格常数与第二子电池的层的晶格常数的差别小于0.2%。
在一改进方案中,第五子电池的层的晶格常数与第二子电池的层的晶格常数的差别小于0.2%。
在一改进方案中,所有子电池关于锗子电池方面相互晶格匹配。
附图说明
下面参照附图更详细地阐释本发明。在此,相同的部件以一致的标记标明。所示的实施方式为高度示意性的,即间距以及水平和竖直的延伸不是按比例的,并且只要未另外说明则也相互不具有能推论的几何结构方面的关系。其中示出:
图1三结太阳能电池的根据本发明的实施方式的横截面;
图2a作为第一替代方案中的四结太阳能电池的根据本发明的实施方式的横截面;
图2b作为第二替代方案中的四结太阳能电池的根据本发明的实施方式的横截面;
图2c作为第三替代方案中的四结太阳能电池的根据本发明的实施方式的横截面;
图2d作为第四替代方案中的四结太阳能电池的根据本发明的实施方式的横截面;
图3a作为第一替代方案中的五结太阳能电池的根据本发明的实施方式的横截面;
图3b作为第二替代方案中的五结太阳能电池的根据本发明的实施方式的横截面;
图3c作为第三替代方案中的五结太阳能电池的根据本发明的实施方式的横截面;
图3d作为第四替代方案中的五结太阳能电池的根据本发明的实施方式的横截面;
图3e作为第五替代方案中的五结太阳能电池的根据本发明的实施方式的横截面;
图3f作为第六替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。
具体实施方式
图1的图示示出了堆叠状的单片(monolithischen)多结太阳能电池MS的根据本发明的第一实施方式的横截面,下面将所述堆叠的单个太阳能电池称为子电池。多结太阳能电池MS具有第一子电池SC1,其中,第一子电池SC1包括锗。在第一子电池SC1上平放地布置有包括GaInAsP化合物的第二子电池。第二子电池SC2具有比第一子电池SC1大的带隙。在第二子电池SC2上平放地布置有包括GaInP化合物或者包括AlGaInP化合物的第三子电池,其中,第三子电池SC3具有最大的带隙。当前,第二子电池SC2具有1.2电子伏特与1.3电子伏特之间的能量带隙。
在第一子电池SC1与第二子电池SC2之间构造有变质缓冲器MP1和半导体镜HS1。缓冲器MP1包括多个未单个示出的层,其中,缓冲器MP1内部的晶格常数通常从缓冲器MP1的层到层向第二子电池SC2的方向提高。当第二子电池SC2的晶格常数与第一子电池SC1的晶格常数不一致时,缓冲器MP1的引入是有利的。
第一半导体镜HS1的反射走向与第二子电池SC2的带隙相协调。换言之,那些能被第二子电池SC2吸收的波长在第二子电池SC2的吸收区域中被反射回来。由此,第二子电池SC2的吸收区域的厚度可显著减小且辐射稳定性可提高。
理解为,在单个的子电池SC1、SC2和SC3之间分别构造有一未示出的隧道二极管。
也理解为,三个子电池SC1、SC2和SC3中的每个子电池分别具有一发射极和一基极,其中,第二子电池SC2的厚度大于0.4微米地构造。
通过使第一子电池SC1的带隙小于第二子电池SC2的带隙且使第二子电池SC2的带隙小于第三子电池SC3的带隙,发生穿过第三子电池SC3的表面的太阳入射。
图2a示出了作为第一替代方案中的四结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与关于图1所示的实施方式的不同之处。在第二子电池SC2与第三子电池SC3之间构造有包括AlInGaAs化合物的第四子电池SC4。第二子电池SC2、第四子电池SC4和第三子电池SC3的晶格常数相互匹配或者说彼此一致。换言之,子电池SC2、SC4和SC3是相互“晶格匹配”的。第四子电池SC4具有比第二子电池SC2大的带隙,然而具有比第三子电池SC3小的带隙。
图2b示出了作为第二替代方案中的四结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与以上实施方式的不同之处。第四子电池SC4从现在起包括AlInGaAsP化合物。
图2c示出了作为第三替代方案中的四结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图2b中所示的实施方式的不同之处。第四子电池SC4包括GaInAs化合物且构造在半导体镜HS1与第二子电池SC2之间,其中,第二子电池SC2现在具有1.43电子伏特与1.6电子伏特之间的能量带隙且包括AlInGaAsP化合物。
图2d示出了作为第四替代方案中的四结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图2c中所示的实施方式的不同之处。第四子电池SC4包括GaInNAs化合物,并且第二子电池SC2包括InGaAsP化合物。所有四个子电池SC1、SC4、SC2和SC3现在是相互晶格匹配的且基本上具有锗的晶格常数。换言之,多结太阳能电池MS不具有变质缓冲器MP1。
图3a示出了作为第一替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图2a中所示的实施方式的不同之处。在第四子电池SC4与第三子电池SC3之间构造有包括GaInP化合物的第五子电池SC5。第二子电池SC2、第四子电池SC4、第五子电池SC5和第三子电池SC3的晶格常数相互匹配或者说彼此一致。换言之,子电池SC2、SC4、SC5和SC3是相互“晶格匹配”的。第五子电池SC5具有比第四子电池SC4大的带隙,然而具有比第三子电池SC3小的带隙。
图3b示出了作为第二替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图3a中所示的实施方式的不同之处。第四子电池SC4从现在起包括AlInGaAsP化合物。
图3c示出了作为第三替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图3b中所示的实施方式的不同之处。第四子电池SC4包括GaInAs化合物且构造在半导体镜HS1与第二子电池SC2之间,其中,第二子电池SC2现在具有1.3电子伏特与1.4电子伏特之间的能量带隙且包括AlInGaAsP化合物。
图3d示出了作为第四替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图3c中所示的实施方式的不同之处。第四子电池SC4包括GaInNAs化合物且构造在半导体镜HS1与第二子电池SC2之间,其中,第二子电池SC2现在具有1.43电子伏特与1.74电子伏特之间的能量带隙且包括InGaAsP化合物。第五子电池SC5包括AlGaInAs化合物。所有五个子电池SC1、SC4、SC5和SC3现在是相互晶格匹配的且基本上具有锗的晶格常数。换言之,多结太阳能电池MS不具有变质缓冲器MP1。
图3e示出了作为第五替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图3d中所示的实施方式的不同之处。第五子电池SC5包括AlGaInAsP化合物。
图3e示出了作为第六替代方案中的五结太阳能电池的根据本发明的实施方式的横截面。下面仅阐释与图3e中所示的实施方式的不同之处。第五子电池SC5包括GaInAs化合物且构造在第四子电池SC4与第二子电池SC2之间,其中,第二子电池SC2包括AlInGaAsP化合物。
Claims (16)
1.堆叠状的多结太阳能电池(MS),其包括:
第一子电池(SC1),其中,所述第一子电池主要具有锗,和
第二子电池(SC2),其中,所述第二子电池(SC2)具有比所述第一子电池(SC1)大的带隙,和
第三子电池(SC3),其中,所述第三子电池(SC3)具有比所述第二子电池(SC2)大的带隙,并且
所述子电池(SC1,SC2,SC3)中的每个子电池具有发射极和基极,
并且第二子电池(SC2)包括具有一化合物的层(S2),所述化合物至少具有元素GaInAsP,并且所述层(S2)的厚度大于100纳米,并且所述层(S2)构造为所述发射极的一部分和/或所述基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分,并且所述层(S2)的晶格常数小于5.84埃,
第三子电池(SC3)包括具有一化合物的层(S3),所述化合物至少具有元素GaInP,并且所述层(S3)的厚度大于100纳米,并且所述层(S3)构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分,
在两个子电池之间不构造半导体键合,并且
所述第三子电池(SC3)的所述层(S3)的晶格常数与所述第二子电池(SC2)的所述层(S2)的晶格常数的差别小于0.2%,
其特征在于,
在所述第二子电池(SC2)中,所述层(S2)的磷含量大于1%且小于45%,并且所述层(S2)的铟含量小50%,并且
在所述第一子电池(SC1)与所述第二子电池(SC2)之间构造有变质缓冲器(MP1),其中,所述缓冲器(MP1)具有至少三个层的序列,并且晶格常数在所述序列情况下向所述第二子电池(SC2)方向逐层提高。
2.根据权利要求1所述的多结太阳能电池(MS),其特征在于,所述多结太阳能电池(MS)具有正好三个子电池和/或所述第二子电池(SC2)的所述层(S2)具有1.2电子伏特到1.3电子伏特范围中的能量带隙。
3.根据权利要求1或权利要求2所述的多结太阳能电池(MS),其特征在于,两个直接相互跟随的子电池具有不同的元素。
4.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,
第四子电池(SC4)被布置在所述第二子电池(SC2)与所述第三子电池(SC3)之间,并且所述第四子电池(SC4)的层(S4)具有化合物,所述化合物至少具有元素AlGaInAs或者GaInAsP,并且所述层(S4)的厚度大于100纳米,并且所述层(S4)构造为所述发射极的一部分和/或所述基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分,或者
第四子电池(SC4)被布置在所述第一子电池(SC1)与所述第二子电池(SC2)之间,并且所述第四子电池(SC4)的所述层(S4)具有化合物,所述化合物至少具有元素GaInAs或者GaInNAs,并且厚度大于100纳米,并且所述层构造为所述发射极的一部分和/或所述基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
5.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述第三子电池(SC3)的所述层(S3)包括至少具有元素AlGaInP的化合物。
6.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,构造有半导体镜(HS1),并且所述半导体镜(HS1)被布置在所述第一子电池(SC1)与所述第二子电池(SC2)之间和/或被布置在所述第一子电池(SC1)与所述第四子电池(SC4)之间。
7.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述第二子电池(SC2)的所述层(S2)或者所述第四子电池(SC4)的所述层(S4)包括至少具有元素AlGaInAsP的化合物。
8.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述多结太阳能电池(MS)具有正好四个子电池和/或所述第二子电池(SC2)的所述层(S2)具有1.43电子伏特到1.6电子伏特范围中的能量带隙。
9.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,
第五子电池(SC5)被布置在所述第二子电池(SC2)与所述第三子电池(SC3)之间,并且所述第五子电池(SC5)包括具有化合物的层(S5),所述化合物至少包括元素AlGaInAs或者AlGaInAsP或者GaInP,并且所述层(S5)的厚度大于100纳米,并且所述层(S5)构造为所述发射极的一部分和/或所述基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分,或者
第五子电池(SC5)被布置在所述第二子电池(SC2)与所述第四子电池(SC4)之间,并且所述第五子电池(SC5)的所述层(S5)包括化合物,所述化合物至少具有元素GaInAs,并且所述第五子电池(SC5)的所述层(S5)的厚度大于100纳米,并且所述层构造为发射极的一部分和/或基极的一部分和/或位于发射极与基极之间的空间电荷区的一部分。
10.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述多结太阳能电池(MS)具有正好五个子电池和/或所述第二子电池(SC2)的所述层(S2)具有1.3电子伏特到1.4电子伏特范围中的能量带隙或者1.43电子伏特到1.7电子伏特范围中的能量带隙。
11.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,在所述第二子电池(SC2)中,所述层(S2)的磷含量小于35%,并且所述层(S2)的铟含量小45%,和/或所述层(S2)的晶格常数小于5.81埃。
12.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,在所述第二子电池(SC2)中,所述层(S2)的磷含量小于25%,并且所述层(S2)的铟含量小45%,和/或所述层(S2)的晶格常数小于5.78埃。
13.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,在所述第二子电池(SC2)中,所述层(S2)的厚度大于0.4微米或者大于0.8微米。
14.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述第二子电池(SC2)不具有多重量子阱结构。
15.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述第四子电池(SC4)的所述层(S4)的晶格常数与所述第二子电池(SC2)的所述层(S2)的晶格常数的差别小于0.2%。
16.根据以上权利要求中任一项所述的多结太阳能电池(MS),其特征在于,所述第五子电池(SC5)的所述层(S5)的晶格常数与所述第二子电池(SC2)的所述层(S2)的晶格常数的差别小于0.2%。
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CN109285909A (zh) * | 2018-09-29 | 2019-01-29 | 扬州乾照光电有限公司 | 一种多结太阳能电池及其制作方法 |
CN110634984A (zh) * | 2019-09-04 | 2019-12-31 | 中国电子科技集团公司第十八研究所 | 一种正向失配五结太阳电池 |
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CN113921644A (zh) * | 2020-07-10 | 2022-01-11 | 阿聚尔斯佩西太阳能有限责任公司 | 单片的变质的多结太阳能电池 |
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