CN106882802B - A kind of modified graphene oxide and preparation method and purposes - Google Patents
A kind of modified graphene oxide and preparation method and purposes Download PDFInfo
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- CN106882802B CN106882802B CN201710116786.7A CN201710116786A CN106882802B CN 106882802 B CN106882802 B CN 106882802B CN 201710116786 A CN201710116786 A CN 201710116786A CN 106882802 B CN106882802 B CN 106882802B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 26
- 229940106691 bisphenol a Drugs 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- 150000003839 salts Chemical class 0.000 claims abstract description 8
- 239000003054 catalyst Substances 0.000 claims abstract description 5
- 230000032050 esterification Effects 0.000 claims abstract description 4
- 238000005886 esterification reaction Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 10
- 239000012044 organic layer Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 230000003252 repetitive effect Effects 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 238000010992 reflux Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- -1 modified graphene oxide.Modified graphene Chemical class 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 11
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 8
- 238000004146 energy storage Methods 0.000 description 4
- 229910052938 sodium sulfate Inorganic materials 0.000 description 4
- 235000011152 sodium sulphate Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention belongs to material modification fields, and in particular to a kind of surface modified graphene oxide and preparation method and its be used to prepare too can battery method.Select carboxylic graphene oxide as the material being modified, excessive bisphenol-A is as modified material, using inorganic salts as catalyst, esterification occurs, obtains modified graphene oxide.Modified graphene oxide is used to prepare solar cell, forms bilayer modified graphene oxide film solar cell, optical energy utilization efficiency is promoted apparent.
Description
Technical field
The invention belongs to solar cell manufacturing fields, and in particular to it is a kind of be used to prepare too can battery it is modified oxidized
Graphene and preparation method thereof.
Background technology
Graphene oxide (graphene oxide) is the oxide of graphene, has single atomic layer, can be at any time
Expand to some tens of pm on lateral dimension, the construct trans typical size of general chemistry and material science.Powdered graphite
It is obtained after chemical oxidation and stripping, oxygen-containing functional group increases and keeps property more active compared with graphene thereon, can be via various
Improve nature with reacting for oxygen-containing functional group.Graphene oxide can be considered a kind of flexible material of non-traditional kenel, be
A kind of new carbon haveing excellent performance, with the functional group that higher specific surface area and surface are abundant.Graphene oxide is compound
Material includes polymerization species composite material and inorganic species composite material is even more the field that has a wide range of applications, therefore aoxidizes stone
The surface of black alkene, which is modified, becomes a research emphasis.
With the development that science and technology is with rapid changepl. never-ending changes and improvements, photovoltaic power generation technology is at home and abroad widely used, and is applied
Form is varied, and application places are widely distributed, is mainly used for the room of large-scale ground photovoltaic plant, house and commercial buildings
Top, building Photovoltaic Building Integration, optical road lamp etc..For solar cell mainly based on semi-conducting material, work is former
Reason is that opto-electronic conversion reaction occurs after absorbing luminous energy using photoelectric material, and generated power of solar cell is related with illuminating area, light
Showing up, product is bigger, and generated energy is more, and typical photovoltaic material only reacts to the light of specific frequency and color, particularly with red
Outside line, most of solar cells do not absorb infrared ray, can not effectively be utilized its energy, therefore for solar energy
Utilization ratio is relatively low.
Graphene and graphene oxide are applied to area of solar cell at present and are still in the exploratory stage, there is patent document
It reports and is used graphene as electricity generation material in solar cell, the infrared ray in sunlight is absorbed, as power generation
The energy source of material, but common graphite alkene itself stores that energy is low, can not accumulate more energy, therefore Solar use is imitated
Rate promotes unobvious.
Invention content
The purpose of the present invention：For presently, there are the problem of, a kind of modified graphene oxide is provided, use it for prepare too
Positive energy battery, improves the utilization ratio of solar energy.
Technical scheme of the present invention：Select carboxylic graphene oxide as the material being modified, excessive bisphenol-A is made
Esterification occurs, bisphenol-A is introduced on graphene oxide, bis-phenol is obtained using inorganic salts as catalyst for modified material
A and the spaced modified graphene oxide of graphene oxide, preparation method include：
(1) bisphenol-A, inorganic salts and DMAC solvents is chosen to be added in three-necked flask and be sufficiently stirred 0.5h；
(2) carboxylic graphene oxide is added into the three-necked flask of step 1, is reacted in 100-150 DEG C of condensing reflux
6-8h reacts layering after generating water and forms water layer and organic layer, organic layer is rotated under 220-240 DEG C of vacuum condition and is isolated
Bisphenol-A and ethyl alcohol, obtain modified graphene oxide.
Preferably, the inorganic salts described in step (1) are sulfate or nitrate.
Preferably, bisphenol-A, carboxylic graphene oxide, inorganic salt catalyst described in step (1) and (2) and
The molar ratio of DMAC solvents is 10:5-9:1:20.
A kind of solar cell prepared with modified graphene oxide, preparation method include：
(1) preparing polysilicon film is under vacuum, heavy using physics when the temperature of silicon substrate is 650-900 DEG C
Drop method prepares the polysilicon membrane that thickness is 100 μm on silicon substrate；
(2) it anneals, anneals and carried out in the vacuum resistance furnace of logical hydrogen, by silicon substrate of the step 1 containing polysilicon membrane
Insulation annealing is respectively carried out at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively 30 minutes, is finally cooled to room temperature；
(3) modified graphene film is grown, modified graphene film is prepared using PECVD device, controlled at 300-
400 DEG C, air pressure 3-5MPa, power 3500W, one layer of modified graphene film, interval are first deposited on polysilicon membrane
Continue to deposit second layer modified graphene film after 15min, the thickness of double-layer films deposition is 100-200nm, forms solar energy
Cell piece；
(4) laser opening, solar cell back face laser opening after annealing, repetitive rate 24%, average energy
Amount is 8W, and single-point energy is 32 μ J；
(5) preparation of PN junction, antireflective film and electrode, using the crystal silicon solar energy battery PN junction of conventional commercial, anti-reflection
The preparation method of film and electrode, obtains solar cell.
Preferably, the antireflective film described in step (5) is Al2O3、TiO2Or SiO2。
The technique effect of the present invention：
1. the carboxyl of bisphenol-A and graphene oxide is acted in inorganic salt catalyst occurs esterification, formed bisphenol A modified
Graphene oxide.Although common graphite alkene has responding ability to infrared ray, it stores less energy and has then reached full
With can not play the role of the big energy of storage.And modified graphene oxide prepared by the present invention has the structure of graphene, simultaneously
Contain big polar bisphenol-A again, graphene-structured therein can constantly respond extraneous infrared ray, while big polar
The energy storage that structure of bisphenol A can obtain response wherein, forms a kind of " energy storage pool ", continuously for solar cell
Energy is conveyed, the utilization ratio of luminous energy has been significantly increased.
2. the solar cell of the present invention contains bilayer modified graphene film, is formed two layers " energy storage pool ", avoid single layer
Modified graphene film is blocked up, and the energy of accumulation is larger and punctures " energy storage pool ", the present invention by design double-layer films to
Solves this problem.
Specific implementation mode
Embodiment 1
Prepare modified graphene oxide：
(1) 5mol bisphenol-As, 0.5mol sodium sulphate and 5mol DMAC solvents is chosen to be added in three-necked flask and be sufficiently stirred
0.5h；
(2) the carboxylic graphene oxides of 2.5mol are added into the three-necked flask of step 1, are condensed back at 120-130 DEG C
Stream reaction 7h reacts layering after generating water and forms water layer and organic layer, organic layer is rotated under 230 DEG C of vacuum conditions and is isolated
Bisphenol-A obtains modified graphene oxide.
Prepare solar cell：
(1) preparing polysilicon film, under vacuum, when the temperature of silicon substrate is 800 DEG C, using physics sedimentation
The polysilicon membrane that thickness is 100 μm is prepared on silicon substrate；
(2) it anneals, anneals and carried out in the vacuum resistance furnace of logical hydrogen, by the substrate silicon of step (1) containing polysilicon membrane
Piece respectively carries out insulation annealing 30 minutes at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively, is finally cooled to often
Temperature；
(3) modified graphene film is grown, modified graphene film is prepared using PECVD device, controlled at 350-
360 DEG C, air pressure 4MPa, power 3500W, one layer of modified graphene film is first deposited on polysilicon membrane, is spaced 15min
After continue deposit second layer modified graphene film, double-layer films deposition thickness be 150nm, formed solar battery sheet；
(4) laser opening, solar cell back face laser opening after annealing, repetitive rate 24%, average energy
Amount is 8W, and single-point energy is 32 μ J；
(5) preparation of PN junction, antireflective film and electrode, using the crystal silicon solar energy battery PN junction of conventional commercial, anti-reflection
The preparation method of film and electrode, obtains solar cell.
Embodiment 2
Prepare modified graphene oxide：
(1) 5mol bisphenol-As, 0.5mol sodium sulphate and 7.5mol DMAC solvents is chosen to be added in three-necked flask and fully stir
Mix 0.5h；
(2) the carboxylic graphene oxides of 3.75mol are added into the three-necked flask of step 1, are condensed back at 120-130 DEG C
Stream reaction 6h reacts layering after generating water and forms water layer and organic layer, organic layer is rotated under 230 DEG C of vacuum conditions and is isolated
Bisphenol-A obtains modified graphene oxide.
Prepare solar cell：
(1) preparing polysilicon film, under vacuum, when the temperature of silicon substrate is 800 DEG C, using physics sedimentation
The polysilicon membrane that thickness is 100 μm is prepared on silicon substrate；
(2) it anneals, anneals and carried out in the vacuum resistance furnace of logical hydrogen, by the substrate silicon of step (1) containing polysilicon membrane
Piece respectively carries out insulation annealing 30 minutes at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively, is finally cooled to often
Temperature；
(3) modified graphene film is grown, modified graphene film is prepared using PECVD device, controlled at 350-
360 DEG C, air pressure 4MPa, power 3500W, one layer of modified graphene film is first deposited on polysilicon membrane, is spaced 15min
After continue deposit second layer modified graphene film, double-layer films deposition thickness be 150nm, formed solar battery sheet；
(4) laser opening, solar cell back face laser opening after annealing, repetitive rate 24%, average energy
Amount is 8W, and single-point energy is 32 μ J；
(5) preparation of PN junction, antireflective film and electrode, using the crystal silicon solar energy battery PN junction of conventional commercial, anti-reflection
The preparation method of film and electrode, obtains solar cell.
Embodiment 3
Prepare modified graphene oxide：
(1) 5mol bisphenol-As, 0.5mol sodium sulphate and 10mol DMAC solvents is chosen to be added in three-necked flask and be sufficiently stirred
0.5h；
(2) the carboxylic graphene oxides of 4.5mol are added into the three-necked flask of step 1, are condensed back at 120-130 DEG C
Stream reaction 6h reacts layering after generating water and forms water layer and organic layer, organic layer is rotated under 230 DEG C of vacuum conditions and is isolated
Bisphenol-A obtains modified graphene oxide.
Prepare solar cell：
(1) preparing polysilicon film, under vacuum, when the temperature of silicon substrate is 800 DEG C, using physics sedimentation
The polysilicon membrane that thickness is 100 μm is prepared on silicon substrate；
(2) it anneals, anneals and carried out in the vacuum resistance furnace of logical hydrogen, by the substrate silicon of step (1) containing polysilicon membrane
Piece respectively carries out insulation annealing 30 minutes at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively, is finally cooled to often
Temperature；
(3) modified graphene film is grown, modified graphene film is prepared using PECVD device, controlled at 350-
360 DEG C, air pressure 4MPa, power 3500W, one layer of modified graphene film is first deposited on polysilicon membrane, is spaced 15min
After continue deposit second layer modified graphene film, double-layer films deposition thickness be 150nm, formed solar battery sheet；
(4) laser opening, solar cell back face laser opening after annealing, repetitive rate 24%, average energy
Amount is 8W, and single-point energy is 32 μ J；
(5) preparation of PN junction, antireflective film and electrode, using the crystal silicon solar energy battery PN junction of conventional commercial, anti-reflection
The preparation method of film and electrode, obtains solar cell.
Comparative example 1
Modified graphene oxide is not prepared, the carboxylic graphene oxide used in 1 step of embodiment (2) is directly used
In preparing solar cell, remaining operation obtains solar cell with embodiment 1.
Comparative example 2
The bisphenol-A that embodiment 1 uses is not added, and the operation for preparing modified graphene oxide processing step (1) is:It chooses
0.5mol sodium sulphate and 5mol DMAC solvents are added in three-necked flask and are sufficiently stirred 0.5h.Remaining operation is obtained with embodiment 1
To solar cell.
Comparative example 3
It prepared by embodiment 1 only deposits one layer of modified graphene oxide film, thickness and reality in solar cell step (3)
It is identical to apply the sum of 1 double-layer films thickness of example, remaining operation obtains solar cell with embodiment 1.
Embodiment 1-3 and comparative example the 1-3 solar cell prepared are put into actual use, crucial ginseng is detected
Number, as shown in table 1, statistics indicate that：1. embodiment 1-3 and comparative example 1 statistics indicate that, modified graphene oxide is more not
Modified graphene containing carboxylic-oxidized improves 0.50%-0.86%；2. embodiment 1-3 and comparative example 1 statistics indicate that, it is double
Phenol A plays the role of key in graphene oxide modifying process；3. embodiment 1-3 and comparative example 3 statistics indicate that, it is double-deck
The more monolayer-modified graphene oxide film solar cell of modified graphene oxide thin-film solar cells improves 0.28%-
0.64%.
Solar cell prepared by 1 embodiment 1-3 of table and comparative example 1-2 uses parameter list
| Uoc(mV) | Isc(A) | FF (%) | Rs(mΩ) | Rsh(Ω) | EFF (%) | |
| Embodiment 1 | 658.1 | 10.012 | 82.3 | 1.97 | 591.3 | 20.85 |
| Embodiment 2 | 653.7 | 9.598 | 80.3 | 2.13 | 542.1 | 20.49 |
| Embodiment 3 | 656.2 | 9.747 | 81.5 | 2.05 | 567.3 | 20.62 |
| Comparative example 1 | 552.3 | 8.387 | 67.6 | 4.21 | 306.9 | 19.99 |
| Comparative example 2 | 533.0 | 8.166 | 68.6 | 4.17 | 311.7 | 20.04 |
| Comparative example 3 | 591.2 | 8.987 | 72.6 | 3.01 | 483.2 | 20.21 |
Claims (6)
1. a kind of modified graphene oxide, which is characterized in that select carboxylic graphene oxide as the material being modified, mistake
The bisphenol-A of amount is as modified material, using inorganic salts as catalyst, esterification occurs, obtains modified graphene oxide.
2. a kind of preparation method of modified graphene oxide as described in claim 1, which is characterized in that the preparation method
Including：
(1) bisphenol-A, inorganic salts and DMAC solvents is chosen to be added in three-necked flask and be sufficiently stirred 0.5h；
(2) carboxylic graphene oxide is added into the three-necked flask of step 1, reacts 6-8h in 100-150 DEG C of condensing reflux,
Layering forms water layer and organic layer after reaction generates water, and organic layer is rotated under 220-240 DEG C of vacuum condition and isolates bisphenol-A
And ethyl alcohol, obtain modified graphene oxide.
3. the preparation method of modified graphene oxide as claimed in claim 2, which is characterized in that inorganic described in step (1)
Salt is sulfate or nitrate.
4. the preparation method of modified graphene oxide as claimed in claim 2, which is characterized in that described in step (1) and (2)
Bisphenol-A, carboxylic graphene oxide, inorganic salts and DMAC solvents molar ratio be 10:5-9:1:20.
5. a kind of purposes of modified graphene oxide as described in claim 1, which is characterized in that the modified graphite oxide
Alkene is used to prepare solar cell, and the preparation method of battery includes：
(1) preparing polysilicon film, under vacuum, when the temperature of silicon substrate is 650-900 DEG C, using physics sedimentation
The polysilicon membrane that thickness is 100 μm is prepared on silicon substrate；
(2) it anneals, anneals and carried out in the vacuum resistance furnace of logical hydrogen, by step（1 ）Silicon substrate containing polysilicon membrane according to
It is secondary insulation annealing respectively to be carried out at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C 30 minutes, it is finally cooled to room temperature；
(3) modified graphene film is grown, modified graphene film is prepared using PECVD device, controlled at 300-400
DEG C, air pressure 3-5MPa, power 3500W first deposit one layer of modified graphene film on polysilicon membrane, are spaced 15min
After continue deposit second layer modified graphene film, double-layer films deposition thickness be 100-200nm, formed solar cell
Piece；
(4) laser opening, solar cell back face laser opening after annealing, repetitive rate 24%, average energy are
8W, single-point energy are 32 μ J；
(5) preparation of PN junction, antireflective film and electrode, using the crystal silicon solar energy battery PN junction of conventional commercial, antireflective film and
The preparation method of electrode, obtains solar cell.
6. the purposes of modified graphene oxide as claimed in claim 5, which is characterized in that the antireflective film described in step (5) is
Al2O3、TiO2Or SiO2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710116786.7A CN106882802B (en) | 2017-03-01 | 2017-03-01 | A kind of modified graphene oxide and preparation method and purposes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710116786.7A CN106882802B (en) | 2017-03-01 | 2017-03-01 | A kind of modified graphene oxide and preparation method and purposes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106882802A CN106882802A (en) | 2017-06-23 |
| CN106882802B true CN106882802B (en) | 2018-09-07 |
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