CN106856173A - Preparation method, oxide thin film transistor of active layer and preparation method thereof - Google Patents
Preparation method, oxide thin film transistor of active layer and preparation method thereof Download PDFInfo
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- CN106856173A CN106856173A CN201611192417.8A CN201611192417A CN106856173A CN 106856173 A CN106856173 A CN 106856173A CN 201611192417 A CN201611192417 A CN 201611192417A CN 106856173 A CN106856173 A CN 106856173A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 230000003647 oxidation Effects 0.000 claims abstract description 60
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 60
- 239000010408 film Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 239000003792 electrolyte Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000010129 solution processing Methods 0.000 claims description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000003672 processing method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000001467 acupuncture Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012163 sequencing technique Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000007743 anodising Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of preparation method of active layer, oxide thin film transistor and preparation method thereof, the preparation method of the active layer is comprised the following steps：The deposition oxide film on substrate, and treatment acquisition oxide skin(coating) is patterned to the sull；The photoresist layer being covered on the oxide skin(coating) is made on substrate, and treatment is patterned to the photoresist layer makes the oxide skin(coating) expose channel region；The substrate is placed in electrolyte, the substrate, using Pt metal as negative electrode, anodized is carried out to the substrate as anode, and oxide skin(coating) forms active layer after anodic oxidation on the channel region；Substrate is taken out, photoresist layer is removed.The carrier concentration of the processing method reduction active layer that the present invention passes through anodic oxidation, realizes shuffling for device threshold voltage so that device is in " often closing " state, so as to obtain high stability, low energy-consumption electronic device.
Description
Technical field
The present invention relates to display technology field, more particularly, to a kind of preparation method of active layer, sull crystal
Pipe and preparation method thereof.
Background technology
Thin film transistor (TFT) (TFT, Thin Film Transistor) is mainly used in control and drives liquid crystal display
(LCD, Liquid Crystal Display), Organic Light Emitting Diode (OLED, Organic Light-Emitting
Diode) the sub-pixel of display, is the core technology of FPD.
Compared to ripe a-Si:H TFT and LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon skill
Art) TFT backplate technology, the TFT backplate technology based on metal oxide semiconductor material have electron mobility it is high (1~
100cm2/ Vs), preparation temperature it is low (<400 DEG C, far below the fusing point of glass), low cost (only need to common sputtering technology i.e.
Can complete) and the characteristics of continuous firing good stability, it is considered as most promising TFT backplate technology of future generation, is subject to
Academia and industrial circle it is widely studied.
At present, the problem that oxide thin film transistor is present is the semiconductor channel layer of generation often with very high
Carrier concentration so that the carrier in active area can not be depleted completely, the threshold voltage for causing transistor is negative value (to n
For type device), i.e., when grid voltage is 0, there is electric current to produce in channel layer, device can not be complete switched off.When device to be made
Part is turned off, it is necessary to apply a negative grid voltage, this will increase the power consumption of device.
The content of the invention
Based on this, the invention reside in the defect for overcoming prior art, there is provided a kind of preparation method of active layer, oxide are thin
Film transistor and preparation method thereof, the carrier concentration of the processing method reduction active layer that it passes through anodic oxidation, realizes device
Threshold voltage is shuffled (close to 0V) so that device is in " often closing " state, so as to obtain high stability, low energy-consumption electronic device.
Its technical scheme is as follows：
A kind of preparation method of active layer, comprises the following steps：
The deposition oxide film on substrate, and treatment acquisition oxide skin(coating) is patterned to the sull；
The photoresist layer being covered on the oxide skin(coating) is made on substrate, and the photoresist layer is patterned
Treatment makes the oxide skin(coating) expose channel region；
The substrate is placed in electrolyte, the substrate as anode, using Pt metal as negative electrode, to the substrate
Anodized is carried out, oxide skin(coating) forms active layer after anodic oxidation on the channel region；
Substrate is taken out, photoresist layer is removed.
Wherein in one embodiment, it is described the step of carry out anodized to substrate using permanent after first constant current oxidation
The method for pressing oxidation, constant current density is 0.1mA/cm2~0.5mA/cm2, constant voltage is 20V~50V.
Wherein in one embodiment, the constant current density is 0.15mA/cm2, the constant voltage is 50V.
Wherein in one embodiment, the method for constant pressure oxidation is specially after the first constant current oxidation：First apply constant electricity
Stream, the voltage between anode and negative electrode will be raised linearly over time, when voltage is increased to constant voltage, by voltage constant dimension
Hold 30min~40min.
Wherein in one embodiment, the carrier concentration modification scope of the active layer is 1016cm-3~1020cm-3。
Wherein in one embodiment, the deposition oxide on substrate using physical vapour deposition (PVD) or the method for solution processing
Film.
Wherein in one embodiment, the thickness of the oxide skin(coating) is 10nm~200nm.
Wherein in one embodiment, the sull is ZnO film, In2O3Film, SnO2Film, Ga2O3It is thin
Film, ZrInO films, InZnO films, InSnO films, InAlO films, InWO films, InGaZnO films, InAlZnO films,
One or more combination in InTaZnO films, InHfZnO films.
The technical program additionally provides a kind of preparation method of oxide thin film transistor, it is characterised in that including above-mentioned
Active layer preparation method.
The technical program additionally provides a kind of oxide thin film transistor, including substrate, grid, gate insulator, active
Layer, source electrode and drain electrode, the active layer are made using the preparation method of above-mentioned active layer.
The advantage or principle to preceding solution are illustrated below：
The operation principle of anodic oxidation is：O in electrolyte2-Sull (anode) is shifted in the presence of electric field,
With the oxygen acupuncture point (Vo in sull2+) react (Vo2++O2-→ O) so that the Lacking oxygen in eliminating sull,
With the carrying out of anode oxidation process, the oxygen acupuncture point concentration of sull is persistently reduced.The present invention passes through anodized
The mode of sull adjusts the oxygen vacancy concentration in sull, so that the carrier for reducing sull is dense
Degree, and then shuffling for device threshold voltage is realized, finally, realize TFT device threshold voltages close to 0 so that device is in " often
Close " state, obtain high stability, low energy-consumption electronic device.The present invention can be by applying different anodic oxidation voltage and anodic oxygens
The change time adjusts the oxygen vacancy concentration in sull, realizes the regulation and control of sull carrier concentration.The present invention is carried
The preparation method of the active layer of confession can be carried out in room temperature, can effectively adjust the carrier concentration in sull, be realized
Electrical property by conductor to semiconductor scope regulation and control.The method have simple and easy to apply, utilization rate of raw materials it is high, to environment
Pollution-free the advantages of, it is adaptable to industrial production.
Brief description of the drawings
Fig. 1 illustrates the processing step of grid formation；
Fig. 2 illustrates the processing step of gate insulator formation；
Fig. 3 illustrates the processing step of oxide skin(coating) formation；
Fig. 4 illustrates the processing step of photoresist layer formation；
Fig. 5 illustrates the processing step of channel region formation；
Fig. 6 illustrates the processing step of anodized；
Fig. 7 illustrates the processing step of removal photoresist layer；
Fig. 8 illustrates the processing step that source electrode and drain electrode are formed；
Fig. 9 is the transfer characteristic curve figure of the oxide thin film transistor described in the embodiment of the present invention one；
Figure 10 is the transfer characteristic curve figure of the oxide thin film transistor described in the embodiment of the present invention two；
Figure 11 is the transfer characteristic curve figure of the oxide thin film transistor described in the embodiment of the present invention three；
Figure 12 is the transfer characteristic curve figure of the oxide thin film transistor described in the embodiment of the present invention four.
Description of reference numerals：
10th, substrate, 20, grid, 30, gate insulator, 40, oxide skin(coating), 41, channel region, 411, active layer, 42, source
Area, 43, drain region, 50, photoresist layer, 61, source electrode, 62, drain electrode.
Specific embodiment
To make the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing and specific embodiment party
Formula, is described in further detail to the present invention.It should be appreciated that specific embodiment described herein is only used to solve
The present invention is released, protection scope of the present invention is not limited.
Oxide thin film transistor of the present invention is channel etching structure, with simple structure, can obtain minimum chi
The advantage of very little device architecture.The oxide thin film transistor includes substrate 10, grid 20, gate insulator 30, active layer 41, source
Pole 61 and drain electrode 62.Active layer 41 described in the present embodiment is sull.The sull be binary oxide (ZnO,
In2O3, SnO2, Ga2O3 etc.), ternary oxide (ZrInO, InZnO, InSnO, InAlO, InWO etc.), quaternary oxide
One or more combination in (InGaZnO, InAlZnO, InTaZnO, InHfZnO etc.), thickness is 10nm~200nm or 10nm
~100nm.
The substrate 10 can be silicon chip that glass, plastics or surface are oxidized etc..
The grid 20 is conductive material, such as metal, metal alloy or conducting metal oxide ITO (In2O3-SnO2) etc.,
Conductive material more than two-layer, such as Mo/Al/Mo are can also be, thickness is 100~500nm.
The gate insulator 30 can be dielectric substance such as SiO2、SiNx、Si-O-N、Al2O3、Ta2O5、Y2O3Or
HfO2In one or more layers, thickness be 100nm~1000nm.
The source electrode 61 and drain electrode 62 are conductive material, such as metal, metal alloy or conducting metal oxide, may be used also
To be conductive material more than two-layer, such as Mo/Al/Mo, thickness is 50nm~1000nm.
Oxide thin film transistor of the present invention has various structures type, including bottom gate top contact structure, bottom gate bottom connect
Touch structure, top-gated top contact structure and top-gated bottom contact structures etc..Below oxide is illustrated by taking bottom gate top contact structure as an example
The preparation method of thin film transistor (TFT), specifically includes following steps：
S10, as shown in figure 1, make conductive film by the method for magnetron sputtering on the substrate 10, and by blocking mask
Or the graphical conductive film of method of photoetching, prepare grid 20.
The present invention also can be using vacuum evaporation or solution processing (spin coating rejection film method, ink-jet printing process and silk screen print method
Deng) etc. method prepare grid 20.
S20, as shown in Fig. 2 on the substrate 10 pass through anodizing, thermal oxidation method, physical vaporous deposition or chemistry
Vapour deposition process makes thin dielectric film, and by blocking the graphical thin dielectric film of the method for mask or photoetching, prepares
Gate insulator 30.
S30, on the substrate 10 making sull active layer 41.The preparation method of the active layer 41 is specifically included：
S31, as shown in figure 3, deposition oxide film on the substrate 10, and place is patterned to the sull
Reason obtains oxide skin(coating) 40.
Specifically, oxide target material can be carried out in the sputtering chamber on target position magnetron sputtering deposition obtain 10nm~
The sull of 200nm, is patterned during preparation using the method for picking up gear mask.
It should be noted that the present invention both can by physical vapour deposition (PVD) and also by solution process method in substrate 10
Upper deposition oxide film, it is not limited to the method for magnetron sputtering.The physical vaporous deposition refers to common thin film deposition
Method, such as：Magnetron sputtering, pulsed laser deposition (PLD) and ald (ALD) etc.；The solution processing method refers to spin coating
Rejection film method, ink-jet printing process and silk screen print method etc..
S32, as shown in figure 4, making photoresist layer 50 on the substrate 10, the photoresist layer 50 is covered in the oxide
On layer 40, and treatment (blocking mask or photoetching) is patterned to the photoresist layer 50 so that the oxide skin(coating) 40 exposes
Channel region 41, as shown in figure 5, the both sides of channel region 41 are then respectively source region 42 and drain region 43.
S33, as shown in fig. 6, the substrate 10 is placed in electrolyte, the substrate 10 is set to anode, using metal
Pt carries out anodized to the substrate 10 as negative electrode, on the channel region 41 oxide skin(coating) 40 through anodic oxidation at
Reason forms active layer 411.
The operation principle of anodic oxidation is：O in electrolyte2-Sull (anode) is shifted in the presence of electric field,
With the oxygen acupuncture point (Vo in sull2+) react (Vo2++O2-→ O) so that Lacking oxygen is eliminated, with anodic oxidation
The carrying out of journey, the oxygen acupuncture point concentration of sull is persistently reduced, and then causes that the carrier concentration of sull reduces.Institute
The method that the step of carrying out anodized to substrate 10 is aoxidized using constant pressure after first constant current oxidation is stated, constant current density is
0.1mA/cm2~0.5mA/cm2, preferably 0.15mA/cm2；Constant voltage is 20V~60V, preferably 50V.The first constant current
The method of constant pressure oxidation is specially after oxidation：First apply constant current, the voltage between anode and negative electrode will rise linearly over time
Height, when voltage is increased to constant voltage, 30min~40min, preferably 40min is maintained by the voltage constant.By the anode
Oxidation treatment method, may be such that the carrier concentration of sull 1016cm-3~1020cm-3In the range of regulate and control；Its resistivity
In 10 Ω cm~105Regulate and control in the range of Ω cm；Its light transmission rate regulates and controls in the range of 80%~90%.
Electrolyte described in the present embodiment is the ammonium tartrate solution of mass fraction 3.48wt%, wherein ammonium tartrate and second two
The volume ratio of alcohol is 1:3, the electrical conductivity of electrolyte can be improved, reduce energy consumption needed for anodic oxidation.
Below by taking ITO sulls as an example, its anodized process and result are illustrated：
Substrate 10 containing ito thin film is soaked in the electrolytic solution, the substrate 10 connects anode, Pt metal connects negative electrode.First
Plus constant current (0.1mA/cm2~0.5mA/cm2), the voltage between two electrodes will be raised linearly over time, when voltage reaches institute
Value (the V of settinga=10V/20V/30V/50V) when, then constant this voltage (Va), duration about 30min~40min, electric current
To be steadily decreasing with the time, untill electric current almost no significant change.
Table 1 have recorded different oxidation voltage (Va) under ito thin film electric property situation of change：As can be seen that ito thin film
When not carrying out anodic oxidation, conductor nature is shown as, sheet resistance is 13.5 Ω/, and electricalresistivityρ is 10-4Ω·cm；Anodic oxidation
Afterwards, sheet resistance and resistivity increase, and as oxidation voltage increases, the sheet resistance of ito thin film increases to 10 Ω/, and resistivity increases
Greatly to 105Ω cm, show ito thin film after the anodic oxidation by aoxidizing before conductive film be changed into semiconductor property
Film.The result shows, by anode oxidation method the electric property of sull can be realized from conductor to semiconductor
Regulation and control in category.
The electric property of ito thin film before and after the anodic oxidation of table 1
Below by taking In2O3 sulls as an example, its anodized process and result are illustrated：
In will be contained2O3The substrate 10 of film soaks in the electrolytic solution, and the substrate 10 connects anode, and Pt metal connects negative electrode.First
Plus constant current (0.1mA/cm2~0.5mA/cm2), the voltage between two electrodes will be raised linearly over time, when voltage reaches institute
Value (the V of settinga=10V/20V/30V/50V) when, then constant this voltage (Va), duration about 30min~40min, electric current
To be steadily decreasing with the time, untill electric current almost no significant change.
Table 2 have recorded different oxidation voltage (Va) under In2O3The situation of change of Electrical performance：As can be seen that In2O3It is thin
When film does not carry out anodic oxidation, conductor nature is shown as, sheet resistance is 52 Ω/, and electricalresistivityρ is 10-3Ω·cm；Anodic oxidation
Afterwards, sheet resistance and resistivity increase, and as oxidation voltage increases, In2O3The sheet resistance of film increases to 109Ω/, resistivity
Increase to 105Ω cm, show In2O3Film oxygen vacancy concentration after anodic oxidation is greatly reduced, under film carrier concentration
Drop, resistance increases.The result shows, can realize that the orientation of the electric property of sull is adjusted by anode oxidation method
Control.
In before and after the anodic oxidation of table 22O3The electric property of film
To sum up knowable to two experimental examples, the carrier concentration of sull can be reduced by anodized, it is real
The characteristic of semiconductor of existing sull.During anodized of the present invention, the constant current density is preferably
0.1mA/cm2~0.5mA/cm2, constant voltage is preferably 20V~50V.Because when constant current density and constant voltage values compared with
Hour, anode oxidation process will be caused insufficient so that the Lacking oxygen in sull can not be effectively eliminated；And work as
When constant current density and excessive constant voltage values, anodic oxidation speed will be caused too fast so that sull quality becomes
Difference, such as hole increase, film compactness is deteriorated, roughness increases, and will influence the device performance of thin film transistor (TFT).Thus this hair
The bright constant current density is preferably 0.1mA/cm2~0.5mA/cm2, it is 20V~50V that constant voltage is preferably.Similarly, institute
It is also 30min~40min to state the constant voltage duration, is used to obtain suitable carrier density and high-quality oxide is thin
Film.
S34, after anodized, substrate 10 is taken out, remove photoresist layer 50, as shown in Figure 7.
S40, as shown in figure 8, make conductive film by the method for magnetron sputtering on the substrate 10, and by graphical place
Reason obtains source electrode 61 (correspondence source region 42) and drain electrode 62 (correspondence drain region 43), and source electrode 61 and drain electrode 62 are located at the two ends of active layer 41 simultaneously
Electrically separate.
The step of may additionally include the making of the top of active layer 411 etching barrier layer or passivation layer etc..
S50, above-mentioned device is made annealing treatment in atmosphere, 150 DEG C of annealing temperature, annealing time 30 minutes, annealed
Treatment can reach reduction sull itself and the defect between adjacent layer, be used to improve the stability (threshold value of device
Voltage is close to 0V).So far, the preparation process of whole device is completed.
It should be noted that " making active layer 41 on the substrate 10 " described herein, " making grid 20 on the substrate 10 "
Etc. such statement, it is the function for substrate is made with substrate 10 to be represented as the functional layer such as active layer 41 and grid 20
Layer can directly be contacted with substrate 10, or by functional layer placed in the middle on substrate 10.Such as work as film crystal
Manage during for bottom gate top contact structure, " making sull active layer 41 on the substrate 10 " in step S30 is expressed as "
Making has making active layer 41 on the substrate 10 of the insulating barrier 30 of grid 20 ".
Additionally, the present invention is not limited the sequencing of above-mentioned steps S10 to S40.For example when sull crystal
Manage during for bottom gate top contact structure, then made according to the sequencing of S10-S20-S30-S40-S50；When sull crystal
When pipe and preparation method thereof is for bottom gate bottom contact structures, then made according to the sequencing of S10-S20-S40-S30-S50.Work as oxygen
When compound thin film transistor (TFT) and preparation method thereof is top-gated top contact structure, then according to the priority of S30-S40-S20-S10-S50
Sequentially built.When oxide thin film transistor and preparation method thereof is top-gated bottom contact structures, then according to S40-S30-S20-
The sequencing of S10-S50 makes.
Shadow of the anodized to the transfer characteristic curve of oxide thin film transistor is illustrated with reference to instantiation
Ring.
Embodiment one
Oxide thin film transistor described in the present embodiment is bottom gate top contact structure, specific using following steps preparation
Into：
It is the Al-Nd alloy firms of 300nm that the method by sputtering prepares a layer thickness on the substrate 10, and uses photoetching
Method graphically prepare grid 20.
The Nd that thickness is 200nm is prepared by anodizing on above-mentioned grid 20:Al2O3Film, forms gate insulator
Layer 30；Specifically, the above-mentioned substrate 10 for preparing grid 20 is placed in electrolyte as anode, using Pt metal as the moon
Pole, carries out anodic oxidation and prepares the insulating barrier 30 of grid 20.Anode oxidation method can enter at room temperature without large scale equipment
OK, make simple.Additionally, because containing aluminum oxide in oxide layer, its dielectric constant is higher, so exhausted based on this single oxidation
The threshold voltage of the oxide thin film transistor of edge layer 30 and preparation method thereof is relatively low, helps to reduce the power consumption of device.
The ZrInO films of thickness 50nm are prepared by the method for sputtering in the top of gate insulator 30, and is covered by blocking
Mould method is graphically obtained oxide skin(coating) 40.
Spin coating thickness is the photoresist layer 50 of 1000nm on above-mentioned oxide skin(coating) 40, and photoresist layer 50 is graphically located
Reason so that oxide skin(coating) 40 exposes channel region 41.
The above-mentioned substrate 10 comprising each functional layer is placed in electrolyte, anodic oxidation is carried out.On sull not by
The part (i.e. channel region 41) that photoresist is blocked is oxidized, and forms active layer 411.
Substrate 10 after the completion of above-mentioned anodic oxidation is taken out, removes photoresist layer 50.
In sull disposed thereon conductive film ITO, and graphically form source electrode 61 and drain electrode 62.
Above-mentioned device is made annealing treatment in atmosphere, 150 DEG C of annealing temperature, annealing time 30 minutes, so far, entirely
The preparation process of device is completed.
Prepared film transistor device performance is tested in atmosphere.Fig. 9 is different oxidation voltage V in embodiment onea
Under the conditions of the transfer characteristic curve that measures of thin film transistor (TFT) for preparing, i.e. relation between drain current and grid voltage.Curve
Test condition be：Source voltage (VS) it is 0V, drain voltage (VD) it is constant be 20V, grid voltage (VG) swept to 20V from -20V
Retouch, test drain current (ID)。
It can be seen in figure 9 that ZrInO films do not carry out anodized (un- in corresponding diagram 9 in the present embodiment
Anodized curves, similarly hereinafter) when, device threshold voltage is relatively born, it is necessary to plus larger negative voltage device can just close in grid 20
It is disconnected.After carrying out anodized, the threshold voltage of device shows as positive movement, and as oxidation voltage increases, threshold value electricity
Pressure holding is continuous positive mobile.This explanation, anode oxidation method can be with the electric property of orientation adjustment sull, so as to orient tune
Save the threshold voltage of TFT.
Embodiment two
The present embodiment is essentially identical with embodiment one, except that sull described in the present embodiment is InZnO
(IZO) film.
Figure 10 is different oxidation voltage V in the present embodimentaThe transfer characteristic curve that the thin film transistor (TFT) of lower preparation is measured, i.e.,
Relation between drain current and grid voltage.The test condition of curve is：Source voltage (VS) it is 0V, drain voltage (VD) permanent
It is set to 20V, grid voltage (VG) scanned from -20V to 20V, test drain current (ID)。
It can be seen from fig. 10 that when IZO films do not carry out anodized in the present embodiment, device threshold voltage compared with
Bear, it is necessary to plus larger negative voltage device can just turn off in grid 20.After carrying out anodized, the threshold voltage of device
Positive movement is shown as, and as oxidation voltage increases, threshold voltage continues positive mobile.This explanation, anode oxidation method can
With the electric property of orientation adjustment sull, so that the threshold voltage of orientation adjustment TFT.
Embodiment three
The present embodiment is essentially identical with embodiment one, except that sull described in the present embodiment is that In2O3 is thin
Film.
Figure 11 is different oxidation voltage V in the present embodimentaThe transfer characteristic curve that the thin film transistor (TFT) of lower preparation is measured, i.e.,
Relation between drain current and grid voltage.The test condition of curve is：Source voltage (VS) it is 0V, drain voltage (VD) permanent
It is set to 20V, grid voltage (VG) scanned from -20V to 20V, test drain current (ID)。
It can be seen from fig. 11 that In in the present embodiment2O3When film does not carry out anodized, device threshold voltage
Relatively bear, it is necessary to plus larger negative voltage device can just turn off in grid 20.After carrying out anodized, the threshold value electricity of device
Pressure shows as positive movement, and as oxidation voltage increases, threshold voltage continues positive mobile.This explanation, anode oxidation method
Can be with the electric property of orientation adjustment sull, so that the threshold voltage of orientation adjustment TFT.
Example IV
The present embodiment is essentially identical with embodiment one, except that sull described in the present embodiment is ito thin film.
It is worth noting that, in the present embodiment, it is not oxidized that ITO is photo-etched the part (04a and 04b lower sections) that glue blocks,
With good electric conductivity, and it is not photo-etched the part that glue blocks and is then oxidized to form active layer 411.Therefore, the present embodiment
Described in TFT active layer 411 and source, drain electrode be respectively the ITO that semiconducting behavior and conductor performance is presented, belong to homogeneity
Knot coplanar structure, has the advantages that contact resistance is small.
Figure 12 is different oxidation voltage V in embodiment 7aThe transfer characteristic curve that the thin film transistor (TFT) of lower preparation is measured, i.e.,
Relation between drain current and grid voltage.The test condition of curve is：Source voltage (VS) it is 0V, drain voltage (VD) permanent
It is set to 20V, grid voltage (VG) scanned from -20V to 20V, test drain current (ID)。
It can be recognized from fig. 12 that when ito thin film does not carry out anodized in the present embodiment, conductor nature is shown as,
Source, drain electrode connection, without field-effect characteristic；Carry out (V after anodizeda=10V), device starts Scene effects
Characteristic, but threshold voltage is relatively negative, it is necessary to could be turned off plus larger negative electricity voltage device in grid 20；As oxidation voltage increases
Greatly, threshold voltage continues positive movement, and resulting devices can be completely switched off near 0V.This explanation, anode oxidation method can
So that the ito thin film with higher carrier concentration to be converted to the semiconductor model of relatively low carrier concentration from conductor category
Farmland, absolutely proves that the electric property that anode oxidation method can be in the larger context to sull realizes orientation regulation and control,
Such that it is able to greatly realize the orientation adjustment to the threshold voltage of TFT.
In sum, the present invention is adjusted in sull by way of anodized sull
Oxygen vacancy concentration, so as to reduce the carrier concentration of sull, and then realizes shuffling for device threshold voltage, finally, real
Existing TFT device threshold voltages are close to 0 so that device is in " often closing " state, obtains high stability, low energy-consumption electronic device.The present invention
The oxygen vacancy concentration in sull can be adjusted by applying different anodic oxidation voltage and anodizing time, it is real
The regulation and control of existing sull carrier concentration.The preparation method of active layer 411 that the present invention is provided can be carried out in room temperature, can be with
Effectively the carrier concentration in regulation sull, realizes regulation and control of the Electrical property by conductor to semiconductor scope.
The method has the advantages that simple and easy to apply, utilization rate of raw materials is high, environmentally safe, it is adaptable to industrial production.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.
Claims (10)
1. a kind of preparation method of active layer, it is characterised in that comprise the following steps：
The deposition oxide film on substrate, and treatment acquisition oxide skin(coating) is patterned to the sull；
The photoresist layer being covered on the oxide skin(coating) is made on substrate, and treatment is patterned to the photoresist layer
The oxide skin(coating) is set to expose channel region；
The substrate is placed in electrolyte, the substrate, using Pt metal as negative electrode, is carried out as anode to the substrate
Anodized, oxide skin(coating) forms active layer after anodic oxidation on the channel region；
Substrate is taken out, photoresist layer is removed.
2. the preparation method of active layer according to claim 1, it is characterised in that described to be carried out at anodic oxidation to substrate
The method that the step of reason is aoxidized using constant pressure after first constant current oxidation, constant current density is 0.1mA/cm2~0.5mA/cm2, it is constant
Voltage is 20V~50V.
3. the preparation method of active layer according to claim 2, it is characterised in that the constant current density is
0.15mA/cm2, the constant voltage is 50V.
4. the preparation method of active layer according to claim 2, it is characterised in that constant pressure oxidation after the first constant current oxidation
Method be specially：First apply constant current, the voltage between anode and negative electrode will be raised linearly over time, when voltage is increased to
During constant voltage, the voltage constant is maintained into 30min~40min.
5. the preparation method of active layer according to claim 1, it is characterised in that the carrier concentration of the active layer is adjusted
Control scope is 1016cm-3~1020cm-3。
6. the preparation method of active layer according to any one of claim 1 to 5, it is characterised in that use physical vapor
Deposition or the method for solution processing the deposition oxide film on substrate.
7. the preparation method of active layer according to any one of claim 1 to 5, it is characterised in that the oxide skin(coating)
Thickness be 10nm~200nm.
8. the preparation method of active layer according to any one of claim 1 to 5, it is characterised in that the oxide is thin
Film is ZnO film, In2O3Film, SnO2Film, Ga2O3Film, ZrInO films, InZnO films, InSnO films, InAlO are thin
One or more groups in film, InWO films, InGaZnO films, InAlZnO films, InTaZnO films, InHfZnO films
Close.
9. a kind of preparation method of oxide thin film transistor, it is characterised in that including such as any one of claim 1 to 8 institute
The preparation method of the active layer stated.
10. a kind of oxide thin film transistor, it is characterised in that including substrate, grid, gate insulator, active layer, source electrode and
Drain electrode, the active layer is made using the preparation method of the active layer any one of claim 1 to 8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108550624A (en) * | 2018-04-10 | 2018-09-18 | 山东大学 | A kind of high heat dispersion double grid gallium oxide field-effect thin film transistor (TFT) and preparation method thereof |
| CN109461660A (en) * | 2018-11-14 | 2019-03-12 | 合肥鑫晟光电科技有限公司 | A kind of metal-oxide film and preparation method thereof, thin film transistor (TFT) and array substrate |
| CN111122545A (en) * | 2019-12-30 | 2020-05-08 | 中国科学院宁波材料技术与工程研究所 | Method for nondestructive testing of electrical property of conductive oxide film |
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| CN103325840A (en) * | 2013-04-15 | 2013-09-25 | 北京大学深圳研究生院 | Thin-film transistor and preparation method thereof |
| CN104979406A (en) * | 2015-07-31 | 2015-10-14 | 京东方科技集团股份有限公司 | Thin-film transistor, array substrate, preparation method thereof, and display device |
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| CN103325840A (en) * | 2013-04-15 | 2013-09-25 | 北京大学深圳研究生院 | Thin-film transistor and preparation method thereof |
| CN104979406A (en) * | 2015-07-31 | 2015-10-14 | 京东方科技集团股份有限公司 | Thin-film transistor, array substrate, preparation method thereof, and display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550624A (en) * | 2018-04-10 | 2018-09-18 | 山东大学 | A kind of high heat dispersion double grid gallium oxide field-effect thin film transistor (TFT) and preparation method thereof |
| CN109461660A (en) * | 2018-11-14 | 2019-03-12 | 合肥鑫晟光电科技有限公司 | A kind of metal-oxide film and preparation method thereof, thin film transistor (TFT) and array substrate |
| US10923347B2 (en) | 2018-11-14 | 2021-02-16 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Metal oxide film and manufacturing method thereof, thin film transistor and array substrate |
| CN111122545A (en) * | 2019-12-30 | 2020-05-08 | 中国科学院宁波材料技术与工程研究所 | Method for nondestructive testing of electrical property of conductive oxide film |
| CN111122545B (en) * | 2019-12-30 | 2022-06-10 | 中国科学院宁波材料技术与工程研究所 | Method for nondestructive testing of electrical properties of conductive oxide film |
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