CN106853609A

CN106853609A - Chemical mechanical polishing apparatus and its method

Info

Publication number: CN106853609A
Application number: CN201610070647.0A
Authority: CN
Inventors: 赵珳技; 蔡熙成
Original assignee: KC Tech Co Ltd
Current assignee: Kc Ltd By Share Ltd; KCTech Co Ltd
Priority date: 2015-12-07
Filing date: 2016-02-01
Publication date: 2017-06-16
Anticipated expiration: 2036-02-01
Also published as: KR20170066815A; KR101916211B1; CN106853609B

Abstract

The present invention relates to chemical mechanical polishing apparatus and its method, the device includes：Rubbing head, so that the state that chip is located at downside is pressurizeed to chip and rotates it；Padded determination part, during chemical-mechanical polishing process, obtains the height tolerance on the radial direction of polishing pad；Adjuster, with arm and adjustment disk, polishing pad is pressed to the downside of arm and is rotated by arm cycle rotation predetermined angular centered on hinge axis, adjustment disk；Control unit, the turning speed of arm is adjusted with the second turning speed in the second place, the height of the polishing pad in the second place is higher than the height on first position, second turning speed is less than the first turning speed, thus, by the turning speed for adjusting adjustment disk, the height tolerance on the diverse location of polishing pad can be relaxed, therefore, even if identical is exerted pressure acts on chip, according to the height tolerance of polishing pad, frictional force is different such that it is able to the polished amount hourly of chip is adjusted by each region.

Description

Chemical mechanical polishing apparatus and its method

Technical field

The present invention relates to chemical mechanical polishing apparatus and its method, relate more specifically in chemical-mechanical polishing process process In can be accurately controlled by the height tolerance of real time correction polishing pad chip polishing layer thickness chemically mechanical polishing Devices and methods therefor.

Background technology

Generally, chemically mechanical polishing (Chemical Mechanical Polishing, CMP) operation refers to logical Crossing makes to be rotated against between the chips such as the wafer for semiconductor manufacturing for being provided with polishing layer and polishing flat board, to the table of chip The standard procedure that face is polished.

Fig. 1 is the figure for summarily showing existing chemical mechanical polishing apparatus 9.As shown in figure 1, above-mentioned chemically mechanical polishing Device 9 includes：Polishing flat board 10, polishing pad 11 is attached with upper surface；Rubbing head 20, so that the wafer W for intending polishing is located at down The state in portion so that wafer W is contacted with the surface of polishing pad 11 and is rotated；Adjuster 30, uses preassigned pressure Power is pressurizeed to the surface of polishing pad 11, and is fine cut so that the micropore for being formed at the surface of polishing pad 11 is exposed to Surface；And slurry supply unit 40, supply slurry 40a to the surface of polishing pad 11.

The polishing pad 11 for Bao Lite (Polytex) material being polished to wafer W is attached with polishing flat board 10, And it is rotated 11r with the rotation driving of rotary shaft 12.

Rubbing head 20 includes：Head 21, positioned at the upper surface of the polishing pad 11 of polishing flat board 10, and for holding wafer W； And polishing arm 22, rotation driving head 21, and moved back and forth by the amplitude for specifying.Thus, positioned at rubbing head 20 The wafer W of bottom surface, its operation face is pressurized on polishing pad 11 by rubbing head 20 and is rotated, on the polishing layer of wafer W Implement mechanical polishing process.

Adjuster 30 fine cuts the surface of polishing pad 11, to prevent from being mixed with polishing agent and chemical substance for holding Slurry a large amount of foaming blockage of the micro orifice so that be filled in the foaming stomata of polishing pad 11 slurry be successfully supplied to holding exist Wafer W on rubbing head 21.

Therefore, adjuster 30 is in process is adjusted, the adjustment disk of polishing pad 11 is contacted with to be held using support 33 31 state, makes support 33 carry out rotation driving.Also, cycle rotation is carried out centered on the rotary shaft of support 33 in order to be located at Turn the 31p pressurizations downwards of adjustment disk 31 of the end of the arm 35 of 30d, the cylinder of 31p pressurizations downwards is set by air pressure In the inside of housing, the arm 35 extended from housing carries out reciprocal turning motion, pin is implemented on the extensive area of polishing pad 11 Trickle cutting to the stomata that foams.

Above-mentioned slurry supply unit 40 receives the slurry being externally supplied, and by the slurry supply mouth 42 of arm terminal part to Slurry 40a is supplied on polishing pad 11.Thus, as shown in Fig. 2 being supplied to the slurry 40a of polishing pad 11 in polishing pad 11 on the whole Spread out, and supplied to the wafer W positioned at the bottom surface of rubbing head 20, and implement the chemical polishing of wafer W.

But, the slurry 40a of polishing pad 11 is supplied to from slurry supply unit 40, because of the height tolerance 79 of polishing pad 11, nothing Method successfully spreads out on the surface of polishing pad 11, and the chemical polishing operation by slurry cannot be implemented as expected, and with Wafer polishing that lower region E2 relative compared to the apparent height of polishing pad 11 is in contact layer region, due to polishing pad The clearance of the polishing layer per hour (removal in wafer polishing layer region that are in contact of apparent height region E1 relatively high Rate it is) higher, therefore, the throwing of chip is adjusted in the way of the exerting pressure of each region to change chip by rubbing head 20 There is limitation in photosphere thickness aspect.

That is, according to prior art, the height for also having attempted being adjusted during chemical-mechanical polishing process is implemented polishing pad is inclined 79 are differed from, but due to cannot in a short time adjust the height tolerance of polishing pad, even if the pressure applied to chip by rubbing head Power is uniform, can also occur the polishing layer thickness profile of chip because polishing pad height tolerance produced by deviation of exerting pressure, it is impossible to Solve the problems, such as erratically to cause the thickness deviation of wafer polishing layer.

The content of the invention

The technical problem of solution

In order to solve problem as described above, it is an object of the present invention to during chemical-mechanical polishing process by Adjuster corrects the height tolerance of polishing pad exactly in real time and within the shorter time.

Thus, it is an object of the present invention to be accurately controlled the polishing layer thickness of above-mentioned chip.

Especially, it is an object of the present invention to moving up and down displacement and detect polishing with the adjustment disk of sufficiently wide area The height tolerance of pad, enabling the simple control for realizing the adjuster to the height tolerance for correcting polishing pad exactly.

Thus, it is an object of the present invention to need not move through control or the calculation process of complexity, prevent because in calculating process The delay of the surface planarisation of polishing pad, can promptly realize polishing pad by adjuster caused by the mistake being likely to occur Surface planarization, and improve the polishing quality of chip.

Also, it is an object of the present invention to control the height tolerance of polishing pad inclined to eliminate the thickness of wafer polishing layer Difference, so as to according to required profile, control to have completed the thickness distribution of the wafer polishing layer of chemical-mechanical polishing process exactly.

Also, it is an object of the present invention to control polishing pad height tolerance during, not with by adjustment disk press to Exerting pressure for polishing pad is controlled, but is controlled with the rotary speed and turning speed of adjustment disk, thus, it is possible to more The height tolerance of polishing pad is controlled exactly.

Technical scheme

To achieve these goals, the present invention provides chemical mechanical polishing apparatus, with the shape that chip is in contact with polishing pad State implements chemical-mechanical polishing process, it is characterised in that including：Rubbing head, so that above-mentioned chip is right in the state of downside Above-mentioned chip is pressurizeed and is rotated above-mentioned chip；Padded determination part, during chemical-mechanical polishing process, obtains Height tolerance on the radial direction of polishing pad；Adjuster, with arm and adjustment disk, above-mentioned arm is revolved centered on hinge axis Convolution turns predetermined angular, and the downside that above-mentioned polishing pad is pressed to the above-mentioned arm being spaced with above-mentioned hinge axis by above-mentioned adjustment disk is simultaneously Rotated；Control unit, is adjusted to the second turning speed, above-mentioned second the turning speed of above-mentioned arm in the second place , higher than the height of the polishing pad on first position, above-mentioned second turning speed is less than by upper for the height of the above-mentioned polishing pad put State the first turning speed of first position.

This is in order to by causing that the second turning speed of the adjustment disk in the second place is less than on first position First turning speed, further to extend the time of contact of the adjustment disk in the second place, the wherein polishing of said second position The height of pad is more than the height of the polishing pad of above-mentioned first position, as a result, the clearance of the polishing pad in the second place More than the clearance of the polishing pad on first position, so as to reduce the height tolerance of the second place and first position.

Thus, the height tolerance on the diverse location of polishing pad can be relaxed by the adjustment of the turning speed of adjustment disk, Therefore in the case where identical is exerted pressure and acts on chip, with the height tolerance of polishing pad, wafer polishing face and polishing pad Between frictional force changed by region, the uneven existing issue of the polished amount per hour such that it is able to solve chip.

According to prior art, also attempt pressing to exerting pressure for adjustment disk by region and relaxing the height of polishing pad by changing Degree deviation, but press to adjustment disk and exert pressure by the air pressure in balancing gate pit to realize, but air pressure time-response (repsone time) is very low, therefore, it is difficult to assign deviation of accurately exerting pressure on accurate position.

On the contrary, according to the present invention, as described above, being controlled to carry out the tune of turning motion on polishing pad by electromotor The turning speed of disk is saved, and the angular speed of turning motion needs to be controlled with relatively low speed, therefore, compared to passing through The control mode of the height tolerance that regulation exerts pressure to relax polishing pad, the present invention can be obtained and more accurately adjust polishing pad The beneficial effect of height.

Now, the turning speed of above-mentioned arm is controlled so as to be inversely proportional with the height tolerance of above-mentioned polishing pad, thus, is throwing In the height of light pad region relatively high, the height of polishing pad is further reduced, so as to be controllable to polishing flat on the whole The height of pad.

On the other hand, above-mentioned control unit linkage is controlled the turning speed of above-mentioned arm and is applied to by above-mentioned adjustment disk Above-mentioned polishing pad is exerted pressure.That is, can be adjusted to be exerted pressure more than first by second is exerted pressure, above-mentioned second exerts pressure is Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk in the small said second position of the turning speed of above-mentioned arm, Above-mentioned first to exert pressure be that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position such that it is able in the shorter time Inside effectively eliminate include apparent height relatively high polishing pad the second place region with it is low comprising apparent height Deviation between the region of first area.

Also, above-mentioned control unit can also the above-mentioned arm of coordinated signals turning speed and above-mentioned adjustment disk rotation speed Degree.That is, above-mentioned control unit is by the second rotary speed of the above-mentioned adjustment disk in the small said second position of above-mentioned turning speed It is adjusted to the first rotary speed more than the above-mentioned adjustment disk on above-mentioned first position such that it is able in a short time will polishing The surface height deviation control of pad is distributed to required apparent height.

But, the invention is not limited in the height of polishing pad is controlled into state flat on the whole, and for crystalline substance The polishing layer of the predetermined region of piece, in order to obtain polished amount per hour higher, it is also possible to make to be in contact with above-mentioned predetermined region Polishing pad height intentionally to maintain get Geng Gao in the way of be controlled.

On the other hand, the present invention provides chemical mechanical polishing apparatus, the state implementationization being in contact with polishing pad with chip Mechanical polishing process is learned, above-mentioned chemical mechanical polishing apparatus are characterised by, including：Rubbing head, so that above-mentioned chip is located at down Above-mentioned chip pressurizeed in the state of side and rotates above-mentioned chip；Padded determination part, in chemically mechanical polishing work In program process, the height tolerance on the radial direction of polishing pad is obtained；Adjuster, with arm and adjustment disk, above-mentioned arm with Cycle rotation predetermined angular centered on hinge axis, above-mentioned adjustment disk presses to above-mentioned polishing pad upper with what above-mentioned hinge axis was spaced State the downside of arm and rotated；Control unit, it is above-mentioned in the rotary speed of a second place enterprising step above-mentioned adjustment disk high Height of the height of the above-mentioned polishing pad in the second place higher than the polishing pad on first position.

This is in order to by causing that the second rotary speed of the adjustment disk in the second place is more than on first position First rotary speed, further to increase the polishing per hour of the polishing pad being polished by adjustment disk in the second place Amount, the wherein height of the polishing pad of said second position more than the polishing pad of above-mentioned first position height, as a result, the The clearance per hour of the polishing pad on two positions is more than the clearance per hour of the polishing pad on first position, so as to more The height tolerance of the second place and first position is reduced in short time.

Thus, the height tolerance on the diverse location of polishing pad can be relaxed by the adjustment of the turning speed of adjustment disk, Even if identical is exerted pressure acts on chip, with the height tolerance of polishing pad, frictional force changes, it is hereby achieved that pressing The effect of the polished amount per hour of region regulation chip.

The rotary speed of adjustment disk is significantly greater than the turning speed of arm (adjustment disk), therefore, compared to control and regulation disk Turning speed, control polishing pad height there is limitation, but, become exerting pressure for adjustment disk compared to existing Dynamic mode, can obtain the height control characteristic of more outstanding polishing pad.

Similarly, the turning speed of above-mentioned adjustment disk be controlled so as to it is proportional to the height tolerance of above-mentioned polishing pad, throw The height of polishing pad is further reduced in the height of light pad region relatively high, thus, it is possible to be controlled to throwing flat on the whole The height of light pad.

Now, above-mentioned control unit linkage controls above-mentioned adjustment disk and is applied to above-mentioned polishing pad by above-mentioned adjustment disk Exert pressure.That is, second can be exerted pressure and is adjusted to be exerted pressure more than first, it is rotation in above-mentioned adjustment disk that above-mentioned second exerts pressure Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk in the big said second position of rotary speed, above-mentioned first exerts pressure It is that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position such that it is able to accurately and effectively controlled so that The height of the polishing pad in the shorter time in regulation is distributed.

But, the invention is not limited in the height of polishing pad is controlled into state flat on the whole, and for crystalline substance The polishing layer of the certain area of piece, in order to obtain polished amount per hour higher, it is also possible to make to be in contact with above-mentioned certain area Polishing pad height intentionally to maintain get Geng Gao in the way of be controlled.

On the other hand, turning speed and the rotation for controlling to adjust disk with linked manner with the height of polishing pad are additional to The mode of speed, in the present invention, above-mentioned control unit will can also be applied on above-mentioned first position by above-mentioned adjustment disk The first of above-mentioned polishing pad is exerted pressure and is adjusted to exert pressure more than being applied to the second of above-mentioned polishing pad in said second position. But, it is applied to exerting pressure for polishing pad and is mainly controlled by air pressure, therefore, adjustment disk carries out reciprocal turning motion on one side While as the position of polishing pad has limitation in terms of adjustment disk is introduced and accurately exerted pressure, so, relative to regulation The turning speed of disk is adjusted, and can implement to be exerted pressure to adjustment disk introducing difference with the height tolerance of polishing pad.

But, other embodiment of the invention, the introducing method exerted pressure does not depend solely on air pressure, also supplements By the introducing method of the loading of electromagnet, the setting (for example, average value) exerted pressure that is introduced into by adjuster leads to Cross air pressure to be consistently introduced into, the change dynamic load exerted pressure is introduced in by adjuster, by electromagnet come while adjusting While introducing, so as to both can accelerate to introduce the response speed exerted pressure, can introduce again and accurately exert pressure.

I.e., it is preferable that by the variation width exerted pressure control to the scope being introduced into by electromagnet, with the rotation with adjustment disk The mode that the rotary speed of speed and adjustment disk is connected together is returned to be controlled.

On the other hand, the present invention provides chemical mechanical polishing apparatus, the state implementationization being in contact with polishing pad with chip Learn mechanical polishing process, it is characterised in that including：Rubbing head so that above-mentioned chip be located at downside in the state of to above-mentioned chip Pressurizeed and made above-mentioned chip to be rotated；Polishing layer thickness measurement portion, during chemical-mechanical polishing process, in acquisition State the polishing layer thickness profile of chip；Adjuster, with arm and adjustment disk, the cycle rotation centered on hinge axis of above-mentioned arm Above-mentioned polishing pad is pressed to the downside of the above-mentioned arm being spaced with above-mentioned hinge axis and is revolved by predetermined angular, above-mentioned adjustment disk Turn；Padded determination part, during chemical-mechanical polishing process, obtains the height tolerance on the radial direction of polishing pad；Control Portion, the height based on the above-mentioned polishing pad acquired in above-mentioned padded determination part is distributed 79,200 and above-mentioned polishing layer thickness measurement portion The polishing layer thickness profile Tw of acquired above-mentioned chip, calculates distribution of correlation coefficient, and so that above-mentioned distribution of correlation coefficient The mode that Rc reaches setting controls the turning speed of above-mentioned adjustment disk.

This is to determine the height distribution of the polishing layer thickness profile and polishing pad of chip, and calculate while reflecting The distribution of correlation coefficient Rc of above-mentioned distribution, and on the basis of correlation coefficient value, by tune during chemical-mechanical polishing process Save device to adjust the height of polishing pad, thus, for the polishing thickness of the target distribution of the polishing layer for meeting chip, according to pad position Put and the turning speed regulation by adjustment disk (or arm) carries out differential regulation come the height tolerance to polishing pad.

In the case, above-mentioned coefficient correlation can be obtained by equation below, i.e., the height distribution 79 of above-mentioned polishing pad, Polishing layer thickness profile the second weighted values of tw* Xw of 200* the first weighted value Xp- chips.That is, it is big in the thickness of wafer polishing layer Region in, in order to obtain polished amount per hour higher, it is necessary to improve the height of polishing pad.But, according in chemical machinery The type of the slurry used in polishing process, the exerting pressure of rubbing head, the rotation of the polishing channel type, polishing pad and chip of chip The polishing conditions such as speed, the height of polishing pad and wafer polishing layer thickness be not limited to it is proportional, therefore, to polishing pad The thickness distribution of highly distribution and wafer polishing layer is multiplied by the first weighted value and the second weighted value respectively, specifies coefficient correlation, makes The parameter being formulated according to polishing process must be reflected.Thus, with meet chip polishing condition condition implement polishing pad height Degree regulation, it is hereby achieved that the thickness distribution of wafer polishing layer is connected with the height of polishing pad under various polishing conditions And the beneficial effect for further accurately controlling.

In the case, above-mentioned first weighted value Xp and above-mentioned second weighted value Xw are specified between 0.1 to 10.

Also, memory is may also include, is stored with above-mentioned memory based on the above-mentioned of above-mentioned chemically mechanical polishing condition First weighted value and above-mentioned second weighted value, above-mentioned first weighted value Xp and above-mentioned second weighted value Xw are thrown according to chemical machinery The value that optical condition is empirically obtained, above-mentioned control unit can read above-mentioned first weighted value and above-mentioned from above-mentioned memory Two weighted values, and control the turning speed of above-mentioned adjustment disk.

For example, above-mentioned control unit can make the mode of the distribution in uniform value of above-mentioned coefficient correlation adjust above-mentioned regulation The turning speed of disk, so as to by the polishing layer thickness control of chip into overall uniform form.

Also, in order to the polishing layer thickness to chip during chemical-mechanical polishing process is adjusted, break away from by area The existing mode that domain is pressurizeed to chip, the first turning speed on the first position of polishing pad is controlled into more than polishing pad The second turning speed in the second place, above-mentioned first position with as the first of the bigger first thickness of wafer polishing thickness degree Place is in contact, and said second position is with wafer polishing thickness degree for the second place of second thickness is in contact so that first The wear extent of the polishing pad put is less than the wear extent of the polishing pad in the second place, and guides into the polishing pad on first position Height it is bigger, such that it is able to the wafer polishing thickness degree on the first place is adjusted into the wafer polishing close on the second place Thickness degree.

In this way, using the polishing layer thickness profile and the height of polishing pad of coefficient correlation coordinated signals chip, thus, passing through The height of polishing pad is adjusted come the difference so that each region of chip is exerted pressure according to polishing condition such that it is able to obtain With required form the target polished thickness of chip can be realized (for example, being formed as on the whole in shorter time compared to existing mode Uniform form, or, the thicker or thinner form of polishing layer thickness on subregion) effect.

Now, above-mentioned control unit linkage is controlled the turning speed of above-mentioned arm and is applied to by above-mentioned adjustment disk above-mentioned Polishing pad is exerted pressure.That is, second can be exerted pressure and is adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in second Put and exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, the turning speed of the above-mentioned arm in said second position It is controlled as low, it is the pressure for being applied to above-mentioned polishing pad by above-mentioned adjustment disk on first position that above-mentioned first exerts pressure Power, the turning speed of the above-mentioned arm on above-mentioned first position is controlled as the rotation more than the above-mentioned arm in said second position Return speed.

Also, above-mentioned control unit linkage controls the turning speed of above-mentioned arm and the rotary speed of above-mentioned adjustment disk.Example Such as, the second rotary speed of the above-mentioned adjustment disk in the second place can be adjusted to more than the above-mentioned tune on first position The first rotary speed of disk is saved, the turning speed of the above-mentioned arm in said second position is controlled as low, above-mentioned first position On above-mentioned arm the turning speed turning speed that is controlled as more than the above-mentioned arm in said second position.

Also, the present invention provides chemical mechanical polishing apparatus, the state being in contact with polishing pad with chip implements chemical machine Tool polishing process, it is characterised in that including：Rubbing head, so that above-mentioned chip is carried out in the state of being located at downside to above-mentioned chip Pressurize and make above-mentioned chip to be rotated；Polishing layer thickness measurement portion, during chemical-mechanical polishing process, obtains above-mentioned crystalline substance The polishing layer thickness profile of piece；Adjuster, with arm and adjustment disk, above-mentioned arm cycle rotation regulation centered on hinge axis Above-mentioned polishing pad is pressed to the downside of the above-mentioned arm being spaced with above-mentioned hinge axis and is rotated by angle, above-mentioned adjustment disk； Padded determination part, during chemical-mechanical polishing process, obtains the height tolerance on the radial direction of polishing pad；Control unit, Height based on the above-mentioned polishing pad acquired in above-mentioned padded determination part is distributed 79,200 and above-mentioned institute of polishing layer thickness measurement portion The polishing layer thickness profile Tw of the above-mentioned chip for obtaining, calculates distribution of correlation coefficient, and so that above-mentioned distribution of correlation coefficient Rc Mode with specified distribution Ri controls the rotary speed of above-mentioned adjustment disk.

Similarly, this is also for the height of the polishing layer thickness profile and polishing pad that determine chip is distributed, and calculates same When reflect the distribution of correlation coefficient Rc of above-mentioned distribution, and on the basis of correlation coefficient value, in chemical-mechanical polishing process process In the height of polishing pad is adjusted by adjuster, thus, for the polishing thickness of the target distribution of the polishing layer for meeting chip, According to pad position and by the rotary speed regulation of adjustment disk differential regulation is carried out come the height tolerance to polishing pad.

In the case, above-mentioned coefficient correlation can be obtained by equation below, i.e., the height distribution 79 of above-mentioned polishing pad, Polishing layer thickness profile tw* the second weighted value Xw of 200* the first weighted value Xp- chips, and the first weighted value Xp and second plus Weights Xw is specified between 0.1 to 10.

Also, memory is may also include, is stored with above-mentioned memory based on the above-mentioned of above-mentioned chemically mechanical polishing condition First weighted value and above-mentioned second weighted value, above-mentioned first weighted value Xp and above-mentioned second weighted value Xw are thrown according to chemical machinery The value that optical condition is empirically obtained, above-mentioned control unit can read above-mentioned first weighted value and above-mentioned from above-mentioned memory Two weighted values, and control the rotary speed of above-mentioned adjustment disk.For example, above-mentioned control unit can make at the distribution of above-mentioned coefficient correlation Adjust the rotary speed of above-mentioned adjustment disk in the mode of uniform value, so as to by the polishing layer thickness control of chip into integrally Uniform form.

Now, above-mentioned control unit linkage is controlled the rotary speed of above-mentioned adjustment disk and is applied to by above-mentioned adjustment disk State exerting pressure for polishing pad.That is, second can be exerted pressure and is adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be second Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk on position, by the rotation of above-mentioned adjustment disk in said second position Rotary speed is controlled to height, and above-mentioned first to exert pressure be to be applied to applying for above-mentioned polishing pad by above-mentioned adjustment disk on first position Pressure, the rotary speed of the above-mentioned adjustment disk on above-mentioned first position is controlled as more than the above-mentioned regulation in said second position The rotary speed of disk.

On the other hand, during chemical-mechanical polishing process due to chip also can rotation, therefore, wafer polishing layer thickness Often there is bias phenomenon along the radius length being spaced from rotation center in degree distribution.Thus, if relative to the second place Above-mentioned first place is in the shorter position of radius length, then surround the form that the first place is in by the second place.Thus, when Above-mentioned second place compared to above-mentioned first place from the pivot of above-mentioned chip be separated by farther when, said second position can be borrowed In the way of helping the both sides for specifying above-mentioned first position on the basis of radius lateral direction from the pivot of above-mentioned polishing pad, come Carry out the height of the polishing pad of the first position and the second place of polishing pad that are in contact to first place and the second place of chip The control of degree.

On the other hand, during the height tolerance of above-mentioned polishing pad is determined, eddy current sensor, above-mentioned whirlpool be may also include Flow sensor rotates together with above-mentioned polishing pad；From downside of the above-mentioned eddy current sensor by above-mentioned adjustment disk when received connect The height tolerance of above-mentioned polishing pad can be obtained in the collection of letters number.

That is, the disc carrier of adjustment disk or secured adjusted disk has the sufficiently thick metal levels of more than 1mm, and the metal level is without thickness Degree changes or thickness variation is in insignificant size, therefore, can exactly obtain cut-off from the reception signal of eddy current sensor To adjustment disk metal level apart from variation, thus, can obtain the real-time and accurately thickness variation amount of detection polishing pad has Beneficial effect.

Now, above-mentioned wafer polishing layer is metal level, and above-mentioned eddy current sensor can be configured by the downside of above-mentioned chip When can receive the reception signal of the polishing layer thickness information containing above-mentioned chip.Thus, can be from eddy current sensor through overregulating What is received during the downside of disk receives the thickness distribution of acquisition polishing pad in signal, and eddy current sensor is by the downside of chip When can obtain wafer polishing layer thickness distribution.

On the other hand, above-mentioned padded determination part is formed by displacement transducer, upper displacement sensors be used for determine along State the reciprocal turning motion path of adjustment disk because above-mentioned polishing pad surface height difference produced by above-mentioned adjustment unit it is upper and lower The above-mentioned of above-mentioned adjustment unit as acquired in upper displacement sensors can be moved up and down position by mobile displacement, above-mentioned control unit Shifting amount is considered as, along the height tolerance of the above-mentioned polishing pad in the reciprocal turning motion path of above-mentioned adjustment disk.

This is to use the way of contact or cordless and the measure polishing pad in units of point different from existing The method of height tolerance so that the adjustment disk of reciprocal turning motion is carried out by arm on polishing pad with radial direction During the mode of composition is moved, be obtained in that the adjustment disk produced according to the height tolerance of polishing pad moves up and down position Shifting amount data.Thus, move up and down displacement to implement for relaxing polishing pad by adjustment disk with based on adjustment disk The planarization process of height tolerance, it is not necessary to introduce complicated calculating or control method, it is also possible to which acquisition can relax polishing pad The effect of height tolerance.

Especially, the height tolerance of polishing pad is obtained by the height change of adjustment disk, compared to the polishing pad with rotation Surface situation about being in contact or situation about being measured in a non contact fashion and with a unit, be obtained in that and can ensure that more The effect of accurate measurement result.

In the case, as long as can determine above-mentioned adjustment disk moves up and down displacement equipment, in present claims " displacement transducer " described in book and specification, including touch sensor, noncontacting proximity sensor and by determining lotus Come indirectly obtain the sensor of displacement again.

On the other hand, magnet is may also include, above-mentioned magnet is arranged to magnetic force along the above-mentioned adjustment disk of suppression to gravity direction Mobile direction applies；Above-mentioned padded determination part can be formed by magnetometric sensor, above-mentioned magnetometric sensor be used for determine along State the reciprocal turning motion path of adjustment disk because above-mentioned polishing pad surface height difference produced by above-mentioned adjustment unit it is upper and lower The variation of the above-mentioned magnetic force that moving displacement causes；Above-mentioned control unit can be by from the above-mentioned magnetic determined by above-mentioned magnetometric sensor The displacement that moves up and down of the above-mentioned adjustment unit obtained in the variation of power is considered as, and is backhauled along the reciprocating rotary of above-mentioned adjustment disk The height tolerance of the above-mentioned polishing pad in dynamic path.

Whereby, adjustment unit can be suppressed to be moved along gravity direction, compared to the deadweight of adjustment unit, can be with lighter Exert pressure, play the low pressure adjustment effect being modified to polishing pad, at the same time, reciprocal turning motion is carried out by arm Adjustment disk moved in the way of with radial direction composition on polishing pad during, the height tolerance with polishing pad enters The magnetic force variation that the variation in altitude amount of the adjustment disk that row is moved up and down is reflected as between a pair of magnet, therefore, can be by magnet Between magnetic force variation, obtain adjustment disk according to produced by the height tolerance of polishing pad moves up and down displacement.

Also, above-mentioned adjuster includes：Drive shaft, in the above-mentioned adjustment disk of terminal part rotation driving of above-mentioned arm；Disk branch Frame, sets balancing gate pit between above-mentioned disc carrier and above-mentioned drive shaft, receives the driving force transmitted by above-mentioned drive shaft, so that with Above-mentioned drive shaft carries out linkage rotation, and above-mentioned adjustment disk is held in downside；Transmission axle, is combined with above-mentioned disc carrier, with The pressure for above-mentioned balancing gate pit is moved up and down, and adjusts exerting pressure downwards by above-mentioned adjustment disk；And air pressure supply Portion, for supplying air pressure to above-mentioned balancing gate pit, and, above-mentioned padded determination part can be formed by flow sensor, and above-mentioned flow is passed Sensor be used for determine along above-mentioned adjustment disk reciprocal turning motion path because above-mentioned polishing pad surface height difference produced by The variation for moving up and down the flow to above-mentioned balancing gate pit that displacement causes of above-mentioned adjustment unit, above-mentioned control unit can by from by The displacement that moves up and down of the above-mentioned adjustment unit obtained in the variation of the above-mentioned flow that above-mentioned flow sensor is determined is regarded For along the height tolerance of the above-mentioned polishing pad in the reciprocal turning motion path of above-mentioned adjustment disk.

Whereby, the adjustment disk of reciprocal turning motion is carried out by arm on polishing pad with radial direction composition During mode is moved, the variation in altitude amount of the adjustment disk moved up and down with the height tolerance of polishing pad for The volume of the balancing gate pit formed between drive shaft and transmission axle produces influence, by keeping regulation air pressure while with flow Sensor detection is flowed into the flow of balancing gate pit, can obtain the adjustment disk according to produced by the height tolerance of polishing pad on move down Dynamic displacement.

As described above, above-mentioned adjuster is based on the reciprocal turning motion path of above-mentioned arm with the upper of above-mentioned adjustment disk Acquired determination data based on lower mobile variation, for above-mentioned during the reciprocal turning motion by above-mentioned arm Adjustment disk regulation is exerted pressure, and the mobile height of above-mentioned adjustment disk is higher, then pressed with higher exerting pressure.

Whereby, solve the problems, such as according to existing mode, i.e. even if determining the height tolerance of polishing pad with a unit, Polishing pad cannot be applied pressure to a unit by adjustment disk, thus, by inclined in order to relax the height of determined polishing pad Difference and the adjustment disk that introduces is exerted pressure, it is impossible to the height tolerance of polishing pad is introduced exactly, so as to cause what planarization postponed Problem, at the same time, can also solve the complicated and incorrect problem of calculation, wherein above-mentioned calculation is will to be determined with a unit The height tolerance of the polishing pad of each position matches the calculation of the position of the adjustment disk of the face of carrying out contact.

On the other hand, other field of the invention, the present invention provides cmp method, with chip and polishing The state that pad is in contact implements chemical-mechanical polishing process, and it includes：Polishing step, the downside of rubbing head is located at chip is made Under state, the state of polishing pad is pressurized to the burnishing surface of above-mentioned chip, is rotated while being polished；Padded survey Determine step, during stating polishing step on the implementation, the height on the radial direction of above-mentioned polishing pad is obtained by padded determination part Degree deviation；Pad modification procedure, the adjustment disk for being arranged at the arm of adjuster is right on one side with the second turning speed in the second place The turning speed of the above-mentioned arm of above-mentioned adjuster is adjusted while be modified to above-mentioned polishing pad, in said second position The height of above-mentioned polishing pad be tested that to make be that, more than the height of the polishing pad on first position, above-mentioned second turning speed is less than By the first turning speed of above-mentioned first position.

In this way, in the way of the differential turning speed for controlling to adjust disk of the height tolerance according to polishing pad, can be precisely fast Fast ground clearly and exactly controls the surface of polishing pad high according to required contoured profile, and based on time resolution characteristics high Degree.

Now, in above-mentioned pad modification procedure, make the turning speed of above-mentioned arm and be applied to by above-mentioned adjustment disk The linkage of exerting pressure of polishing pad is stated, it is exerted pressure second and is adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be upper State and exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk in the small said second position of turning speed of arm, it is above-mentioned It is that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position that first exerts pressure.

With this separately or concurrently, in above-mentioned pad modification procedure, it is also possible to make the turning speed of above-mentioned arm and above-mentioned The rotary speed linkage of adjustment disk.That is, above-mentioned control unit can be by the low said second position of above-mentioned turning speed Above-mentioned adjustment disk the second rotary speed the first rotation speed for being adjusted to more than above-mentioned adjustment disk in above-mentioned first position Degree.

Also, the present invention provides cmp method, the state being in contact with polishing pad with chip implements chemical machine Tool polishing process, it includes：Polishing step, in the state of making chip be located at the downside of rubbing head, with the polishing of above-mentioned chip Face is pressurized to the state of polishing pad, is rotated while being polished；Padded determination step, states polishing step on the implementation During rapid, the height tolerance on the radial direction of above-mentioned polishing pad is obtained by padded determination part；Pad modification procedure, second While the second rotary speed of the adjustment disk of adjuster is adjusted to more than the above-mentioned adjustment disk on above-mentioned first position on position The first rotary speed while be modified to above-mentioned polishing pad, the height of the above-mentioned polishing pad in said second position is measured Go out is higher than the height of the above-mentioned polishing pad on above-mentioned first position.

In this way, in the way of the differential rotary speed for controlling to adjust disk of the height tolerance according to polishing pad, can be according to required Contoured profile control polishing pad apparent height.

In the case, in above-mentioned pad modification procedure, the rotary speed of above-mentioned adjustment disk can be made and by above-mentioned tune Section disk is applied to the linkage of exerting pressure of above-mentioned polishing pad, and second is exerted pressure is adjusted to be exerted pressure more than first, and above-mentioned second Exert pressure is to be applied to above-mentioned polishing by above-mentioned adjustment disk in the big said second position of the rotary speed of above-mentioned adjustment disk Pad is exerted pressure, and above-mentioned first to exert pressure be that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position.

On the other hand, the present invention provides cmp method, the state implementationization being in contact with polishing pad with chip Mechanical polishing process is learned, it includes：Polishing step, in the state of making chip be located at the downside of rubbing head, with above-mentioned chip Burnishing surface is pressurized to the state of polishing pad, is rotated while being polished；Polishing layer thickness determination step, is implementing During above-mentioned polishing step, the thickness deviation of the polishing layer of above-mentioned chip is obtained by wafer thickness determination part；Padded measure Step, during stating polishing step on the implementation, the height on the radial direction of above-mentioned polishing pad is obtained by padded determination part Deviation；Pad modification procedure, based on above-mentioned polishing pad acquired in above-mentioned padded determination step height distribution 79,200 and on The polishing layer thickness profile Tw of acquired above-mentioned chip in polishing layer thickness determination step is stated, distribution of correlation coefficient is calculated, And the turning speed of above-mentioned adjustment disk is controlled while the above-mentioned polishing pad that is modified so that above-mentioned distribution of correlation coefficient Rc has Setting.

Also, the present invention provides cmp method, the state being in contact with polishing pad with chip implements chemical machine Tool polishing process, above-mentioned cmp method includes：Polishing step, in the state for making chip be located at the downside of rubbing head Under, the state of polishing pad is pressurized to the burnishing surface of above-mentioned chip, rotated while being polished；Polishing layer thickness Determination step, during stating polishing step on the implementation, the thickness of the polishing layer of above-mentioned chip is obtained by wafer thickness determination part Degree deviation；Padded determination step, during stating polishing step on the implementation, the half of above-mentioned polishing pad is obtained by padded determination part Height tolerance on the direction of footpath；Pad modification procedure, the height based on above-mentioned polishing pad acquired in above-mentioned padded determination step The polishing layer thickness profile Tw of acquired above-mentioned chip, calculates in distribution 79,200 and above-mentioned polishing layer thickness determination step Distribution of correlation coefficient, and the cycle rotary speed of above-mentioned adjustment disk is controlled while the above-mentioned polishing pad that is modified so that it is above-mentioned Distribution of correlation coefficient Rc has setting.

In the case, above-mentioned coefficient correlation is obtained by equation below, i.e., the height distribution 79,200* of above-mentioned polishing pad Polishing layer thickness profile the second weighted values of tw* Xw of the first weighted value Xp- chips, above-mentioned first weighted value Xp and above-mentioned second plus Weights Xw is specified between 0.1 to 10.

Also, above-mentioned first weighted value and above-mentioned second weighted value are read from memory, and controls the rotation of above-mentioned adjustment disk Speed and rotary speed are returned, is stored with above-mentioned memory according to above-mentioned chemically mechanical polishing condition and empirically obtained Above-mentioned first weighted value Xp and above-mentioned second weighted value Xw.

Importantly, above-mentioned padded determination step can realize that above-mentioned adjustment disk is relative to above-mentioned polishing by following manner During pad carries out reciprocal turning motion, determine above-mentioned adjustment disk moves up and down displacement, and will be moved down on above-mentioned adjustment disk Dynamic determining displacement value is considered as the height tolerance of above-mentioned polishing pad.

In this way, the present invention obtains the height tolerance of polishing pad by the height change of adjustment disk, compared to with rotation Polishing pad the surface mode situation about being measured being in contact or be measured in a non contact fashion and in units of point Situation, it can be ensured that more accurate measurement result, and in order to control the apparent height of polishing pad by adjustment disk And turning speed for introducing etc., without using complicated calculation mode, it is also possible to which simplicity is obtained exactly.

In the case, the above-mentioned determining displacement value that moves up and down can move up and down displacement by for determine above-mentioned adjustment disk Displacement transducer obtain, also can determine the magnetic force variation of magnet by magnetometric sensor obtain, above-mentioned magnet is so that magnetic Power is arranged at above-mentioned adjuster along above-mentioned adjustment disk is suppressed to the mode that the direction that gravity direction is moved applies, also can be by flow Sensor determines the flow variation to balancing gate pit to obtain, and above-mentioned balancing gate pit is connected and by above-mentioned tune with air pressure supply unit Section disk stresses on above-mentioned polishing pad.

Now, in above-mentioned pad modification procedure, the exerting pressure less than above-mentioned of above-mentioned polishing pad is applied to above-mentioned adjustment disk Adjustment disk and the deadweight sum for fixing the disc carrier of above-mentioned adjustment disk, can further shorten has the apparent height of polishing pad There is the control time of predetermined value.That is, in the too high region of the apparent height of polishing pad, can be by control mode so that introduce The very small loading smaller than the deadweight sum of the disc carrier for fixing above-mentioned adjustment disk and above-mentioned adjustment disk, it is possible to minimum The apparent height for changing polishing pad is added abrasion on the position smaller than predetermined value.

In the case, from the eddy current sensor rotated together with above-mentioned polishing pad by above-mentioned adjustment disk downside when institute The height tolerance of above-mentioned polishing pad is obtained in the reception signal of reception.Also, it is made up of conductive material in the polishing layer of chip In the case of, when downside of the above-mentioned eddy current sensor by above-mentioned chip, can also determine the polishing layer thickness of above-mentioned chip.

Also, in above-mentioned pad modification procedure, can addedly include：Applied by above-mentioned adjustment disk on above-mentioned first position It is added to the first of above-mentioned polishing pad and exerts pressure and is adjusted to apply more than being applied to the second of above-mentioned polishing pad in said second position Pressure.

Above-mentioned adjustment disk carries out turning motion be may include less than above-mentioned while being applied to exerting pressure for above-mentioned polishing pad The loading of the deadweight of adjustment disk.

In this specification and the claims described " along the apparent height value of the radial direction of polishing pad ", " along the padded degree of the radial direction of polishing pad " and term similarly be defined as not only include " from the bottom surface of polishing pad to The absolute altitude on surface ", but also including the relative altitude as " deviation of the apparent height of polishing pad ".

Described " cycle " and term similarly are defined as in this specification and the claims, to have The end of the arm that the mode of the radial direction composition of polishing pad is moved back and forth in the range of predetermined angular or pars intermedia Mobile route.In the case, the implication of " regulation " is not necessarily confined to a length, and the scope hair including moving back and forth Change dynamic.

Described " rotation " and term similarly are defined as in this specification and the claims, to rotate Rotation is carried out on the basis of center.

Also, " height " and term similarly of described polishing pad in this specification and the claims The apparent height of polishing pad is represented, and is defined as including the absolute dimension of the thickness of polishing pad, the apparent height of polishing pad changes Amount.

" thickness distribution " term of described polishing layer and similarly in this specification and the claims Term is defined as, at the thickness measurement two of the polishing layer of chip more than distribution.Therefore, the distribution of wafer polishing thickness degree It is defined as, including with the distribution of complete solid line somatometry of physique, but the distribution determined on above position is also included within two.

Described " current thickness distribution " in this specification and the claims represents chemical-mechanical polishing process In " real-time " wafer polishing layer thickness distribution, the described " target thickness in this specification and the claims Distribution " is defined as, and represents the thickness distribution for terminating the final wafer polishing layer of time point in chemical-mechanical polishing process.

Invention effect

According to the present invention it is possible to obtain following beneficial effect：By the rotation on the apparent height of polishing pad region higher The turning speed that speed is adjusted to be slower than on the apparent height more low area of polishing pad is returned, so that it is guaranteed that the polishing with adjustment disk Longer time of contact between pad, thus, clearance of the apparent height of polishing pad on region higher is improved, reduce polishing pad Height tolerance, according to the diverse location of polishing pad, even if identical is exerted pressure acts on chip, as the height of polishing pad is inclined Difference, frictional force can also be changed, and the unit interval polished amount of chip can be adjusted by region.

At the same time, the present invention can also obtain following beneficial effect：In the process of the height tolerance of control polishing pad In, centered on the turning speed of adjustment disk, the rotation exerted pressure with adjustment disk applied by adjustment disk by coordinated signals Rotary speed, thus, it is possible to the height tolerance of more accurate promptly control polishing pad.

Whereby, in chemical-mechanical polishing process, the height tolerance of real time correction polishing pad by adjuster, so that can Reach the effect of the polishing layer thickness for being accurately controlled chip.

Especially, the present invention can also obtain following beneficial effect：As described above, being controlled by electro-motor in polishing Turning speed of adjustment disk of turning motion etc. is carried out on pad, is linked centered on relatively low turning speed and exerted pressure, come The height tolerance of polishing pad is controlled, therefore, compared to existing mode, can be adjusted within the more accurate and shorter time and thrown The height of light pad.

Also, the present invention can also obtain following beneficial effect：Height different from determining polishing pad with the way of contact The mode of deviation or in a non contact fashion and in the way of the height tolerance that unit determines polishing pad, performs past by arm The adjustment disk of multiple turning motion is moved on polishing pad in the way of with radial direction composition, and is determined according to polishing pad The adjustment disk of height tolerance displacement is moved up and down obtain the height tolerance data of polishing pad, thus, by regulation Disk and in the presence of planarizing the height tolerance of polishing pad, it is not necessary to introduce complicated calculation or control method, root can be based on The amount of the moving up and down data of the adjustment disk moved back and forth according to cycle and implement, thus, though do not introduce complexity calculation or control Method, it is also possible to complete the planarization process of the more accurately height tolerance of mitigation polishing pad.

That is, the present invention can also obtain following beneficial effect：Compared to the table that polishing pad is determined with a unit The mode of face height tolerance, uses with the surface height deviation for padding to determine the tune being in contact with polishing pad with sufficiently large area Save the mode for moving up and down displacement of disk, it is not necessary to by by according to the surface height deviation data conversion of the position of a unit According to have enough area adjustment disk position surface height deviation data complicated process, can not only solve nothing Method reflection need not carry out complicated control because of the existing issue of the caused parameters such as the swing of adjustment disk that moves back and forth Or calculation, based on determination data, after can calculating and introduce within the shorter time, complete more accurately adjustment disk modifying function.

Also, the present invention can obtain following benefit, i.e. the amount of moving up and down based on adjustment disk, the table of polishing pad is determined Face height tolerance, therefore, compared to the mode that surface height deviation is determined along the radial direction of polishing pad, using according to regulation The moving back and forth displacement of disk and calculate the mode of surface height deviation, therefore, without the reciprocating rotary loop footpath by adjustment disk The process of the position of the radial direction of polishing pad is calculated, and is directly based upon calculated data, polishing pad is carried out with adjustment disk It is modified, thus, using more simplified control algolithm, introduced to polishing pad with adjustment disk and more correctly exerted pressure.

That is, the present invention can also obtain following beneficial effect, based on the amount of moving up and down of adjustment disk, remove the table of polishing pad Face height tolerance, therefore, without complicated control or calculation process, prevent from being led because of the mistake being likely to occur during calculation The delay of the surface planarisation of the polishing pad of cause, completes the planarization on the surface of polishing pad, so as to improve within the faster time The polishing quality of chip.

Importantly, the present invention can also obtain following beneficial effect：Using coefficient correlation come coordinated signals chip Polishing layer thickness profile and polishing pad height, it is contemplated that according to polishing condition and polishing formula characteristic, in chemical machinery The apparent height of polishing pad is accurately adjusted in polishing process, so that time point not only can be terminated in polishing makes the polishing layer of chip Thickness distribution reaches target polished thickness distribution, and can also significantly shorten polishing time.

Brief description of the drawings

Fig. 1 represents the front view of the composition of general chemical mechanical polishing apparatus.

Fig. 2 is the top view of Fig. 1.

Fig. 3 is chart of pivot of the expression from polishing pad to the apparent height measured value of radius lateral direction.

Fig. 4 a are the top view of the chemical mechanical polishing apparatus according to one embodiment of the invention.

Fig. 4 b are the stereogram of the not structure of rubbing head and slurry supply unit including Fig. 4 a.

Fig. 5 is the longitudinal section of the adjuster of Fig. 4 a and Fig. 4 b.

Fig. 6 is the sectional elevation along the line of cut VI-VI of Fig. 5.

Fig. 7 is the enlarged drawing of " A " part of Fig. 5.

Fig. 8 is the enlarged drawing of " B " part part of Fig. 5.

Fig. 9 a are the measure chart of the surface height deviation for moving up and down displacement and actual polishing pad for representing adjustment disk.

Fig. 9 b are to represent that the regulation for determining in fig. 9 a moves up and down the turning speed control of the adjustment disk based on displacement The chart of value processed.

Fig. 9 c are to represent that the regulation for determining in fig. 9 a moves up and down the rotary speed control of the adjustment disk based on displacement The chart of value processed.

Figure 10 is the order of the control method of the chemical mechanical polishing apparatus for representing an embodiment of the invention successively Figure.

Figure 11 a are that eddy current sensor is located at the longitudinal section being exaggerated in the state of the downside of chip.

Figure 11 b are that eddy current sensor is located at the longitudinal section being exaggerated in the state of the downside of adjustment disk.

Figure 12 be represent successively chemical mechanical polishing apparatus according to other embodiments of the invention control method it is suitable Sequence figure.

Figure 13 is the chemically mechanical polishing dress for illustrating the control method of the adjuster of the position according to wafer polishing layer The top view put.

Figure 14 is the figure of the coefficient correlation used when control method for illustrating according to Figure 12 is controlled.

The explanation of reference

W：Chip 1：Chemical mechanical polishing apparatus

11：Polishing pad 20：Rubbing head

40：Slurry supply unit 100：Adjuster

111：Adjustment disk 130：Rotary shaft

201：Displacement transducer 207,209：Magnetometric sensor

205：Flow sensor 50：Polishing layer Thickness sensitivity portion

70：Control unit Tw：Wafer polishing layer thickness profile

Rc：Distribution of correlation coefficient Ri：Target distribution of correlation coefficient

Specific embodiment

The chemical mechanical polishing apparatus 1 of an embodiment of the invention are described in detail next, with reference to accompanying drawing. But, during the present invention will be described, same or analogous reference is assigned for known function or composition, And the explanation relevant with this is omitted, with clear and definite idea of the invention.

As shown in Fig. 4 a and Fig. 4 b, the chemical mechanical polishing apparatus 1 of an embodiment of the invention, including：Polishing is flat Plate 10, above-mentioned polishing flat board 10 carries out rotation 11r with the state that surface thereon is provided with polishing pad 11；Rubbing head 20, so that shape The contact condition of polishing pad 11 is close in operation face into the polishing layer for having wafer W, presses while making its rotation 20r；Adjust Section device 100, for being modified for the surface to polishing pad 11；Slurry supply unit 40, for supplying slurry to polishing pad 11；Throw Light layer thickness sensor 50, the thickness distribution of the polishing layer for determining wafer W in chemical machinery operation；And control unit 70, according to polishing pad 11 and the thickness of wafer polishing layer Le, control to adjust device 100.

Above-mentioned polishing flat board 10 makes rotary shaft carry out rotation driving by driver element, and is rotated together with polishing pad 11, Above-mentioned polishing pad 11 is coated on the surface of the flat board rotated together with rotary shaft 110a.

Above-mentioned rubbing head 20 is internally provided with balancing gate pit, and the air pressure of balancing gate pit is transferred to from external reception, makes wafer W position In the bottom surface of balancing gate pit, and by wafer W pressure to polishing pad 11.Also, during chemical-mechanical polishing process, rubbing head 20 in rotation driving, positioned at the wafer W also rotation of its bottom surface, and causes that wafer polishing layer is polished.Although not shown, but polishing First 20 as disclosed in Korean granted patent publication the 10-1196652nd, No. 10-1387923, No. 10-1387921 Carrier head, by air pressure control, can be exerted pressure by the introducing of each region of chip is different, and above-mentioned air pressure puts on to be applied to chip The balancing gate pit of multiple is divided on the upside of the barrier film base plate of pressure.

During chemical-mechanical polishing process, rubbing head 20 can be located at the position specified, it is also possible to according to specified Stroke carries out reciprocating vibration motion 20d, and the contact surface for being adjusted to wafer W and polishing pad 11 is different.Invention described below Constitute and effect includes that rubbing head 20 carries out reciprocating vibration motion 20d and do not carry out the situation that reciprocating vibration moves 20d.

Above-mentioned slurry supply unit 40 receives supplied slurry 40a from slurry supply unit, and is supplied by slurry supply mouth 42 It is given on polishing pad 11.In figure, show that slurry supply unit 40 supplies slurry to the central portion of polishing pad 11, but according to difference Situation, can be moved while being supplied uniformly across slurry along the radial direction of polishing pad 11 by slurry supply mouth 42.

Above-mentioned adjuster 100 is held by polishing agent and chemical substance phase in order to avoid playing on the surface of polishing pad 11 A large amount of foaming blockage of the micro orifice of the effect of the slurry of mixing, fine cut the surface of polishing pad 11.Thus, it is filled in polishing pad Slurry in 11 foaming stomata can be successfully supplied in the wafer W held by rubbing head 21.

Therefore, adjuster 100 includes：Adjustment unit 110, while entering on the surface of the polishing pad 11 pressed by wafer W The reciprocal turning motion 100d of row is while be modified；Arm 101, adjustment unit 110 is arranged at the state of one end, with The rotation of pivot of maneuver 101a, carries out crankmotion；Rotary shaft 130, in the end of arm 101, enters by drive motor 135 Row rotation driving, and transmit rotary driving force to adjustment unit 110；Fixed component 140, to coat around rotary shaft 130 Form, is positioned at above-mentioned arm 101；Pressure regulating part 150, air pressure is applied to balancing gate pit C1；Padded determination part 202, to adjust The surface height deviation for moving up and down determining displacement polishing pad 11 of disk 111；And a pair first magnet 170 and a pair second magnetic Iron 190, above-mentioned magnet is arranged to magnetic force and applies to the direction that gravity direction is moved along adjustment unit 110 is suppressed.

In the case, the displacement for moving up and down displacement that padded determination part 202 is based on for determining adjustment disk 111 is passed Sensor 201, for determine between drive shaft 131 and transmission axle 132 balancing gate pit C1 flow into air pressure flow flow pass Sensor 205, for determining any one in each pair of measured value of the magnetometric sensor of the magnetic force of magnet 170,190 207,209 More than, according to the road for carrying out cycle movement in the way of with radial direction composition relative to polishing pad 11 by adjustment disk 111 Footpath, determines the apparent height of polishing pad 11.

Above-mentioned adjustment unit 110 includes：Adjustment disk 111, is in contact with the surface with the polishing pad 11 on polishing flat board 10 State, in predetermined angular range, moved along cycle rotating path, and minutely cut polishing pad 11 table Face；Disc carrier 112, secured adjusted disk 111 are in case anti-avulsion falls, and is rotated together with adjustment disk 111.Compared to adjustment disk 111, disk Support 112 is formed by with small section and along the stent strut that vertical direction is upwardly extended, and is arranged at rotary shaft with inserted mode 130 inside.

Adjustment unit 110 is combined with the transmission axle 132 moved along above-below direction in rotary shaft 130, and with biography Pass the rotation of axle 132 and rotate together with, and together move up and down and transmit pressure with moving up and down for transmission axle 132 Power.

Above-mentioned arm 101 is connected with the pivot of maneuver 101a rotated with predetermined angular range, and along with 120d The direction of expression carries out cycle rotary motion.Thus, adjustment unit 110 carries out turning motion on one end of arm 101.Herein In the case of, the turning motion angle of arm 101 can be carried out back and forth according in an angle specified in chemical-mechanical polishing process Turning motion, also can carry out reciprocating rotary convolution and turn according to the angle (for example, 45 degree of-60 degree-45 of the degree of degree-90-60 is spent) for changing.

The adjustment disk 111 of adjustment unit 110 with the reciprocal turning motion of arm 101, along the path of regulation, picture on one side Circular arc, while move back and forth, and the state being in contact with the surface with polishing pad 11 presses to polishing pad 11.In polishing pad On 11 surface, due to the level difference pressed by wafer W in chemical-mechanical polishing process, therefore, polishing pad 11 can be produced Radial direction surface height deviation.Thus, the one side of adjustment disk 111 moves back and forth along the path of rounding top and bottom pattern, and one While being moved up and down according to the height tolerance of polishing pad 11.

Upper displacement sensors 201 are arranged at fixed component 140, and determine during chemical-mechanical polishing process by adjusting The displacement that section disk 111 is moved up and down by the surface height deviation of polishing pad 11.Now, as illustrated, displacement is passed Sensor 201 can be using the noncontacting proximity sensor of laser beam or light, although not shown, or touch sensor. For example, determining the loading for moving up and down 111d according to adjustment disk 111, and thus can also determine upper and lower displacement.That is, according to this The displacement transducer 201 of invention is defined as also including for determining loading, the sensor of pressure that can calculate displacement.Passed in displacement The signal transmission determined in sensor 201 calculates moving up and down displacement and passing for adjustment disk 111 in real time to displacement determination part 202 It is sent to control unit 70.

In this way, compared to the mode for determining the fine irregularities displacement on polishing pad 11, by determining the upper and lower of adjustment disk 111 Mobile displacement 200 (Fig. 9 a), and the surface height deviation data as polishing pad 11 mode, actually adjustment disk 111 exists The polishing pad 11 that applied pressure to during moving back and forth carries out face contact and is formed by adjustment disk 111, rather than Formed with a way of contact.

That is, it is existing with contact somatometry of physique polishing pad surface height deviation in the case of, with the accompanying drawing of Fig. 9 a The form that mark " 79 " is represented is determined, and in moving up and down in the case that displacement is measured with adjustment disk 111, It is measured with the form for being expressed as reference " 200 ".But, that is, ensure the measure number represented with reference " 79 " According to actually plan is implemented to remove the planarization process of the height tolerance of polishing pad 11 by adjusting exerting pressure for adjustment disk 111 When, it is considered as the contact area 111d of adjustment disk 111 and specifies to exert pressure, but because adjustment disk 111 carries out the past of rounding top and bottom pattern The pattern contacted when moving again produces difference with according to the height caused by the fine irregularities of polishing pad, therefore, calculate correct Exerting pressure becomes very difficult.Add, adjustment disk 111 can occur swing slightly during moving back and forth, therefore, it is real On border, the concavo-convex less consistent tendency of exerting pressure with by adjustment disk 111 on polishing pad 11 is may also appear in.

But, according to the present invention, displacement is moved up and down by measure adjustment disk 111, it is regarded as polishing pad 11 Upper-lower height deviation, and control to adjust device based on this, thus, obtains the contact area 111d that reflects adjustment disk and trickle Swing polishing pad 11 on each position height tolerance data, the data even so obtained actually with polishing pad 11 on It is concavo-convex less consistent, it is also possible to exerting pressure for adjustment disk 111 to be specified based on this, thus, it is possible to reach make calculation significantly simple Change, and can more accurately make the effect of the surface planarisation of polishing pad 11 within the faster time.

Above-mentioned rotary shaft 130 includes：Drive shaft 131, in one end of arm 101, original place rotation is carried out by drive motor 135 Turn to drive；Transmission axle 132, is connected and carries out rotation driving with drive shaft 131, and transmits rotary driving force to adjustment unit 110, At the same time, relative to drive shaft 131, the relative movement 132y of above-below direction is carried out；Peripheral shaft 133, in hollow form, and in Empty portion contains drive shaft 131 and transmission axle 132 and is configured at around it.In the illustrated embodiment, peripheral shaft 133 be connected in Drive shaft 131 is simultaneously rotated in place, but according to other embodiment (not shown), peripheral shaft 133 can not have plate described later 133x, and can be so that state of rotation is not configured around drive shaft 131.

The bottom of transmission axle 132 is combined with the disc carrier 112 of adjustment unit 110.Thus, every time by transmission axle 132 When being moved up and down relative to drive shaft 131, disc carrier 112 is together moved up and down along vertical direction.

Balancing gate pit C1 is formed between drive shaft 131 and transmission axle 132, the lower end protuberance 131x of drive shaft 131 is inserted Enter the recess 132c to transmission axle 132, with the air pressure for reaching from pressure regulating part 150 balancing gate pit C, drive shaft 131 it is prominent The space gone out between portion 131x and the recess 132c of transmission axle 132 changes, and thus, transmission axle 132 is along above-below direction 132y is moved, and with moving up and down for transmission axle 132, is changed by exerting pressure for adjustment disk 111.But, supply There is limitation in terms of the correct variable pressure of supply in the short time (for example, 0.5 second to 1 second) in the air pressure to balancing gate pit C Property, therefore, control the wear extent of polishing pad 11 that correctness can be caused to decline by exerting pressure for adjustment disk 111.

In the case, with the air pressure for being flowed into balancing gate pit C1, the interval between drive shaft 131 and transmission axle 132 becomes Greatly, so that what adjustment disk 111 occurred moves up and down displacement.Also, displacement is moved up and down to driving due to adjustment disk 111 The volume of the balancing gate pit C1 formed between axle 131 and transmission axle 132 produces influence, therefore, by considering inside balancing gate pit C1 Pressure, and the flow flowed into balancing gate pit C1 is detected with flow sensor 205, height tolerance according to polishing pad can be obtained Adjustment disk 111 moves up and down displacement data 200.

Now, the section of the recess 132c of the protuberance 131x of drive shaft 131 and transmission axle 132 is with non-circular section (for example, oval or rectangular section) formed, it is allowed to which the transmission axle 132 relative to drive shaft 131 is moved up and down, and with it is above-mentioned Drive shaft 131 and transmission axle 132 are rotated together with.On the other hand, even if the protuberance 131x of drive shaft 131 and transmission axle 132 The circular cross section of recess 132c, radial direction is formed with the opposite surface of above-mentioned protuberance 131x and recess 132c Projection (not shown) and the locking step for housing above-mentioned projection, by the mode interfered along direction of rotation, permit Perhaps the transmission axle 132 relative to drive shaft 131 is moved up and down, and above-mentioned drive shaft 131 and transmission axle 132 can rotate together with.

On the other hand, as shown in Figures 5 and 6, the lower end of transmission axle 132 is connected with adjustment unit 110, but between it Central part is provided with the space E of sky.As shown in fig. 6, extending towards center by from peripheral shaft 133 in empty space E Extension 133c, is formed with plate 133x.That is, the downside of transmission axle 132 by the space of extension 133c with adjustment unit 110 It is connected, adjustment unit 110 is moved up and down and is rotated.

That is, malleation 150d1 from pressure regulating part 150 balancing gate pit C1 is applied to by pressure channel 130p1 when, balancing gate pit C1 Interior pressure is uprised, the expansion of air between drive shaft 131 and transmission axle 132, and by transmission axle 132 and adjustment unit 110 to Lower section promotes.Thus, being applied to exerting pressure for polishing pad 11 by the adjustment disk 111 of adjustment unit 110 can significantly be conditioned.

Now, the protuberance 131x of drive shaft 131, bootable regulation list are inserted with the recess 132x of transmission axle 132 Unit 110 moves relative to rotary shaft 130 (131,132,133) along vertical direction, lower end and the collecting of protuberance 131x Interval z between the lower end of groove 112x, can be used as the stroke for allowing adjustment unit 110 to move up and down.

Also, as shown in fig. 7, be formed with first step 133s on the side wall 133a of peripheral shaft 133, in transmission axle 132 Outer peripheral face on be formed with the second step 132s connected with first step 133s, by first step 133s and second step 132s connects, and forms the limiter for moving up and down for limiting adjustment unit 110.

The mode of air pressure is selectively supplied to the balancing gate pit C1 of rotation, can be using the known composition such as swivel joint come real It is existing.

On the other hand, fixation portions part 140 is fixed on the one end of arm 101, plays rotatably supported effect so that Rotary shaft 130 carries out rotation driving on the one end of arm 101.Therefore, lateral septal of the fixed component 140 in rotary shaft 130 Bearing 89 to be supported.

Above-mentioned pressure regulating part 150 supplies appropriate air pressure by balancing gate pit C1, adjustment disk 111 can be put on into polishing Exerting pressure for pad 11 is adjusted to be become larger since less than 0.5 pound (lb) of the deadweight of adjustment unit 110.Whereby, compared to The different region of the apparent height of polishing pad 11, the unit interval wear extent of low area keeps Min., and can be more fast Speed effectively implements apparent height planarization process.

Therefore, above-mentioned magnet 170 is made up of a pair of magnet 171,172 of generation phase repulsive interaction, and offset adjustment unit 110 Deadweight.Also, in the magnetic force between a pair of the first magnet 171,172, the real time measure is carried out by magnetometric sensor 207, and It is transferred to control unit 70.

As shown in fig. 7, above-mentioned first magnet 170 includes：1-1 magnet 171, transmission axle is arranged at so that annular state is recessed 132 peripheral side；And 1-2 magnet 173, periphery is arranged at annular state in moving up and down in distance for transmission axle 132 Around the side wall of axle 133.Now, 1-1 magnet 171 and the opposite magnetic pole of 1-2 magnet 173 are with the extremely opposite side of identical Formula is arranged, mutually to produce repulsion.In figure, by taking the extremely opposite arrangements of S as an example, but it is also possible to be arranged in N extremely opposite.

In the case, 1-1 magnet 171 and 1-2 magnet 173 is with the composition of ring morphologic arrangement, not only including 1-1 Magnet 171 and 1-2 magnet 173 are formed with annular state and are respectively arranged at around the disc carrier 112 of adjustment unit 110 and revolve The composition of the side wall of the recessed channel 132 of rotating shaft 130 is also multiple small with what is be separated by including 1-1 magnet 171 and 1-2 magnet 173 Magnet is formed and is arranged in around the disc carrier 112 of adjustment unit 110 and the recessed channel 132 of rotary shaft 130 with annular state The composition of side wall.

Now, with the displacement that moves up and down of adjustment disk 111, between 1-1 magnet 171 and 1-2 magnet 173 between Every changing, with the gap between 1-1 magnet 171 and 1-2 magnet 173, the magnetic force acted between them also can Change.Thus, the magnetic force between the real time measure 1-1 magnet 171 of above-mentioned magnetometric sensor 207 and 1-2 magnet 173, Thus, it is possible to determine adjustment disk 111 moves up and down displacement 200.

On the other hand, the position of 1-1 magnet 171 and 1-2 magnet 173 is specified as follows.

First, (for example, 1~2lb) is exerted pressure by adjusting with the deadweight less than adjustment unit 110 using adjustment disk 111 Disk 111 is applied under conditions of the exerting pressure and be applied in of polishing pad, and the height of 1-1 magnet 171 is more than 1-2 magnet 173 Highly.

Thus, in order that the 1-1 magnet 171 of transmission axle 132 is moved under the 1-2 magnet 173 of peripheral shaft 133 Side, it is necessary to overcome the repulsion acted between 1-1 magnet 171 and 1-2 magnet 173, therefore, transmission axle 132 is by the The magnetic force Fr worked with repulsion between one magnet 170 (171,173), its deadweight is cancelled.Thus, it is contemplated that arriving by the first magnetic The deadweight of the adjustment unit 110 that iron 170 is cancelled, by the malleation to balancing gate pit C1 applyings slightly, can will be less than adjustment unit Exerting pressure for the size of 110 deadweight be applied downwardly to polishing pad by adjustment disk 111.

On the other hand, (for example, 10lb) is exerted pressure by adjusting with the deadweight higher than adjustment unit 110 using adjustment disk 111 Section disk 111 is applied under conditions of the exerting pressure and be applied in of polishing pad, and the height of 1-1 magnet 171 is less than 1-2 magnet 173 Height.

Thus, when the position of the 1-1 magnet 171 of adjustment unit 110 is less than the position of the 1-2 magnet 173 of rotary shaft 130 When putting, by produced repulsion between 1-1 magnet 171 and 1-2 magnet 173, produced by the deadweight of adjustment unit 110 Loading and worked downwards added with big the exerting pressure of change of the repulsion between magnet 170, therefore, can be mended by balancing gate pit C1 Fill and apply small malleation, it is also possible to by adjustment disk 111 downwards with bigger pressure polishing pad of exerting pressure.

In the case, using adjustment disk 111, using the exerting pressure of the deadweight more than adjustment unit 110 (for example, 10lb), and with adjustment disk 111 in the case of being applied to the pressure of exerting pressure of polishing pad, then positioned at distance by step 132s, 133s The upside of the limiter of composition about 0.5mm to 8mm, using adjustment disk 111, using applying for the deadweight less than adjustment unit 110 Pressure (for example, 1~2lb), and with adjustment disk 111 be applied to polishing pad exert pressure pressure in the case of, positioned at distance by platform The upside of the limiter about 10mm to 15mm that rank 132s, 133s are constituted, therefore, it is arranged at the side wall 133s's of peripheral shaft 133 1-2 magnet 173 is located at the periphery of the limiting section being made up of step 132s, 133s, and is arranged at apart from step 133s about phases Every 10mm to 15mm apart from the position of d.

On the other hand, when repulsion is produced all the time between 1-1 magnet 171 and 1-2 magnet 173, in 1-1 magnet 171 and 1-2 magnet 173 each other be located at identical height in the state of, exerting pressure becomes unstable, therefore, positioned at outside 1-2 magnet 173 can just produce the electromagnet of magnetic force to be formed only in the case where electric current is applied with.Whereby, with adjustment disk In the case that 111 are applied to the exerting pressure more than adjustment unit 110 of polishing pad, can avoid making along the direction opposite with gravity The repulsion Fr that adjustment unit 110 is tilted is played a role, it is also possible to which realization is only entered by adjustment unit 110 centered on arm 124 With the composition of the pressure of exerting pressure of the deadweight less than adjustment unit 110 on the part path of row turning motion.Especially, in such structure In the case of, because the response characteristic of the magnetic force by electric current is outstanding, thus, it is possible to obtain realizing only for by adjustment disk The 111 part Loading paths for being pressed, with the effect that is pressed of exerting pressure of the deadweight less than adjustment unit 110.

Also, introduced by adjustment disk 111 polishing pad 11 downwards exert pressure, by air pressure by setting (for example, The higher limit exerted pressure that is introduced into operation is adjusted) exert pressure and be introduced into downwards, electromagnet is applied to by control Electric current, pulling force is changed upward and is introduced into, can be by electromagnetism by the adjuster introduced change dynamic load exerted pressure part Body is adjusted.Whereby, due to the variation that can be exerted pressure with the control of quick response speed, therefore, it can to polishing pad Relevant position introduce correctly exert pressure.

In the accompanying drawings exemplified with for the variation exerted pressure being adjusted by electromagnet, with the form for lifting upward The composition of introducing, but drawn with the form of downward pressure but it is also possible to be the variation exerted pressure being adjusted by electromagnet The composition for entering.In this way, being limited to the scope introduced by electromagnet by the variation width for making to exert pressure, coordinated signals are adjusted in the lump The turning speed of disk and the rotary speed of adjustment disk are saved, such that it is able in a short time by the height of required profile adjustment polishing pad Degree deviation.

Now, by 1-1 magnet 171 and the repulsion Fr of 1-2 magnet 173, the part of adjustment unit 110 can be offset certainly Weight, but it is also possible to offset the whole of adjustment unit 110.Therefore, moved towards the radial direction of polishing pad on the one side of adjustment disk 111 While during performing regulation operation, for example, in the specific region of polishing pad, for the height of polishing pad spy substantially high Determine region, can will be set to 0 by introduced the exerting pressure of adjustment disk 111.

In this way, according to the present invention, by the first magnet 170, the repulsion Fr by magnet suppresses by comprising adjustment disk 111 Adjustment unit 110 deadweight and towards gravity direction 110d movement so that the portion of the adjustment unit 110 caused by offsetting because of gravity Divide the deadweight of the above, it is hereby achieved that compared to the deadweight of adjustment unit, exerted pressure with smaller, while with adjustment disk 111 Polishing pad apply pressure to while the effect being modified, wherein the one side of above-mentioned adjustment disk 111 is in contact with polishing pad while being revolved Then surface is modified.

Also, be applied to polishing pad by adjustment disk 111 with the exerting pressure for air pressure regulation that time-response is low, and introduce The lifting loading that adjustment disk 111 is lifted to upside with time-response electromagnet high is utilized, according to the pressure by air pressure Power and the difference of the lifting loading being conditioned by electromagnet, adjust and introduce exerting pressure of being changed towards adjustment disk 111 Variation.Thus, can solve to be difficult by the air pressure of polishing pad to a certain extent to be introduced according to the position of polishing pad The correct problem exerted pressure.

Also, around the transmission axle 132 being combined with adjustment unit 110 and coat peripheral shaft 133 around it Wall 133a in side configures the first magnet 170, is offset by magnetic force by the gravity 110d of the deadweight of adjustment unit 110, thus, In adjustment unit 110, the pulling force Fr for being partial to any side does not work, and is acted as along the pulling force Fr of correct above-below direction With it is hereby achieved that equably remaining less than exerting pressure for adjustment unit 110 on the whole in regulation panel surface, and performing regulation The benefit of operation.

As shown in figure 9, above-mentioned second magnet 190 includes：3-1 magnet 191, transmission axle 132 and adjustment unit 110 it Between empty space E on be arranged at from peripheral shaft 133 extend plate 133x；And 3-2 magnet 193, it is arranged at and plate 133x The lower end of opposite transmission axle 132.Now, 3-1 magnet 191 and 3-2 magnet 193, opposite magnetic pole are opposite with not homopolarity Mode arrange, to produce phase repulsive interaction Fr.

In this way, with the plate 133x for being arranged at upper-lower position fixation 3-1 magnet 191 be arranged at the biography that moves up and down The 3-2 magnet 192 for passing the bottom of axle 131 produces phase repulsive interaction Fr, can offset produced by the gravity because of adjustment unit 110 Deadweight such that it is able to apply to be exerted pressure less than the deadweight of adjustment unit 110.

Similarly, with the displacement that moves up and down of adjustment disk 111, between 2-1 magnet 191 and 2-2 magnet 193 Gap changes, with the gap between 2-1 magnet 191 and 2-2 magnet 193, produced magnetic force between them Can change.Thus, the magnetic between the real time measure 2-1 magnet 191 of above-mentioned magnetometric sensor 209 and 2-2 magnet 193 Power, thus, can determine adjustment disk 111 moves up and down displacement 200.

Above-mentioned polishing layer thickness sensor 50 receives reception signal from wafer polishing layer, and detects the thickness of wafer polishing layer Degree or detection polishing terminate time point.As illustrated, polishing layer thickness sensor 50 is to be the tool of starting point from the center O of polishing pad 11 The mode for having different radii length is provided with multiple.It is more than two exemplified with being provided with for identical radius length in figure Constitute, but for identical radius length, only set even one.Whereby, can be obtained during chemical-mechanical polishing process Obtain the thickness distribution of wafer polishing layer.

Polishing layer thickness sensor can be carried out by irradiation light and the light that will be reflected from wafer polishing layer as signal is received Receive and receive wafer polishing layer thickness information, as shown in fig. 11a, in wafer polishing layer by electric conductivity (electrically Conductive in the case that) material is formed, eddy current signals are applied to wafer polishing layer, thus, will be reflected according to polishing The vortex flow output signal of the changes such as impedance, reactance, the phase difference of thickness degree is received as signal is received, so as to chip can be received Polishing layer thickness information.

That is, on the A2 positions in polishing layer thickness sensor 50 by the downside of wafer W, as shown in fig. 11a, vortex flow is worked as Signal Si be applied to from the wafer polishing layer Le of polishing layer thickness sensor 50 predetermined distance 50d' when, in predetermined area The upper vortex flows of 50E are conducted to the polishing layer Le formed by conductive material, thus, vortex flow and the polishing of conduction to polishing layer Le The thickness of layer Le loses proportionally, and used as output signal, eddy current signals So is from polishing layer Le by polishing layer thickness sensor 50 receive.Thus, the wafer polishing layer Le that thickness changes by chemical-mechanical polishing process can be connect by eddy current sensor The reception signal So of receipts is obtained.

On the other hand, on the A1 positions in polishing layer thickness sensor 50 by the downside of adjustment disk 111, such as Figure 11 b institutes Show there is thick conductive metal layer on the disc carrier 112 of above-mentioned adjustment disk 111 in adjustment disk 111 or for fixing.In this situation Under, metal thickness represents more than 10 times of the thickness for reaching wafer polishing layer Le, for example, it is meant that thickness is more than 1mm.Such as This, when the thickness td of conductive metal layer is substantially thicker than the thickness tw of wafer polishing layer Le, by from eddy current sensor Signal Si and the vortex flow conducted, the loss amount on conductive metal layer are significantly greater than the loss on wafer polishing layer Le Measure and keep constant, therefore, can finally be detected by the reception signal So that eddy current sensor is received from the downside of adjustment disk 111 Go out by the end of adjustment disk 111 apart from 50d.Also, from eddy current sensor 50 to adjustment disk 111 apart from 50d with polishing pad 11 thickness tp and there is difference, therefore, when polish layer thickness sensor 50 be eddy current sensor when, thus can be in chemical machinery The thickness tp of polishing pad 11 is obtained during polishing process.Especially, polishing pad 11 is so determined using eddy current sensor 50 During thickness tp, even if residual slurry or polishing particle etc. on the surface of polishing pad 11, it is also possible to correctly polished in real time The thickness of pad 11.

On the other hand, as shown in Fig. 4 a and Fig. 4 b, polishing layer thickness sensor 50 is fixed on and rotation on polishing pad 11 Center O is separated by multiple positions of different radii length, during chemical-mechanical polishing process, is rotated together with polishing pad 11, During downside of the polishing layer thickness sensor 50 by chip, wafer polishing layer can be obtained from the reception signal for being received Thickness profile data.Especially, in the case where polishing layer thickness sensor 50 is used as eddy current sensor, layer thickness sensor is polished 50 without exposing to polishing pad 11, and can be located at the bottom surface of polishing pad 11.

During chemical-mechanical polishing process, insertion polishing flat board is provided with the downside of wafer W and polishing pad 11 is passed through Logical portion 10a, polishing layer thickness sensor 50 is set in the downside of breakthrough part 10a, so as to the thickness letter of wafer polishing layer can be obtained Breath.

With reference to Figure 10, above-mentioned control unit 70 controls to adjust device 100 according to the height tolerance of polishing pad 11 so that wafer polishing Layer Le is in required thickness distribution.The control method (S100) relevant with this further illustrates as follows.

Step 1：Polishing pad 11 during chemical-mechanical polishing process while be in contact with the burnishing surface of wafer W, on one side On from pivot O to the diverse location of different radii length, the deviation of wear extent is produced.Thus, in chemically mechanical polishing In process, the apparent height (S110) of polishing pad 11 is obtained in real time.

Now, to the surface irradiation light of polishing pad 11, and the surface of the real time measure polishing pad 11 is high from the signal of reflection Degree, also can determine polishing pad on the surface of polishing pad 11 using utensils such as the dials flexibly supported by spring Apparent height.

But, when the height of polishing pad is determined in the manner described above, because residuing in the foreign matter of polishing pad, can send out The problem of raw apparent height measured value distortion.Thus, in order to more accurately determine the apparent height of polishing pad 11, such as Figure 11 b Shown, eddy current sensor 50 is arranged at polishing pad 11, can be more in the reception signal received during from the downside by adjustment disk 111 Plus the height of polishing pad 11 is determined exactly.

But, even if obtaining the height tolerance of polishing pad 11 exactly with correct shape 79 from eddy current sensor 50, adjust The height tolerance for saving polishing pad 11 is needed by being performed with the adjustment disk 111 of enough large area, accordingly, it would be desirable to by based on throwing The height tolerance measured value 79 of light pad 11 and be converted to the process of the controlling elements of adjustment disk 111.

Thus, from displacement transducer 201, flow sensor 205, the magnetometric sensor 207,209 for being arranged at adjuster 100 Determine adjustment disk 111 moves up and down displacement 200 (S110), the tune that will be determined in each sensor 201,205,207,209 That saves disk 111 moves up and down the surface height deviation data (S120) that displacement data 200 (Fig. 9 a) is regarded as polishing pad 11.Polishing The apparent height value 79 of pad 11 has differences with the displacement data 200 that moves up and down of adjustment disk 111, but as described below, can be easy In the surface of control polishing pad 11 in required distribution (for example, overall uniform height distribution or only surface on location Highly big distribution).Below, will be considered as moving up and down displacement 200 because of adjustment disk with the apparent height value of polishing pad 11 Illustrated in case of produced.

On the other hand, the displacement 200 that moves up and down of adjustment disk 111 is transferred to control unit 70.

Step 2：When the apparent height distribution of acquisition polishing pad 11 in real time, control unit 70 is intending reducing the table of polishing pad 11 It is controlled in the second place of face height so that the turning speed w of the arm 101 of adjuster 100 is less than other first positions On speed, so that it is guaranteed that longer with the applying that adjustment disk 111 is in contact on second place P2, as a result, in second The clearance of the clearance more than the polishing pad 11 on the P1 of first position of the polishing pad 11 on P2 is put, so as to reduce the second place The height tolerance (S130) of P2 and first position P1.

For example, intend the integral surface of equably control polishing pad 11 highly, as shown in figure 9b, at first of polishing pad 11 The height T1 on P1 is put less than the height on second place P2, is intending reducing or eliminating on first position P1 and second place P2 Polishing pad 11 height tolerance in the case of, control turning speed 301 so that it is bigger in the apparent height T1 of polishing pad 11 The first turning speed w1 on the P1 of first position is more than the second turning speed w2 on second place P2.Thus, by guiding, So that compared to first position P1, adjustment disk 111 is longer with the time of contact of polishing pad 11 on second place P2, so that Abrasion quantitative change is big, thus, it is possible to eliminate the height tolerance of the polishing pad 11 on first position P1 and second place P2.

Whereby, for the height tolerance on diverse location P1, P2 of polishing pad 11, can be by the rotation to adjustment disk 111 Speed is returned to be adjusted relaxing, therefore, even if identical is exerted pressure, the pressure by rubbing head 20 arrives chip, it is also possible to eliminate The problem for causing frictional force different with the height tolerance of polishing pad, especially, by electro-motor to carrying out relatively low angle speed The turning speed w of the adjustment disk 111 of the turning motion w of degree is adjusted, it is hereby achieved that performing exactly in a short time The advantageous effects relaxed to the surface height deviation of polishing pad 11.

Especially, as shown in figure 9b, the cycle control speed 301 of above-mentioned arm can be controlled by reversely setting, be made It is in inverse ratio to obtain with the height tolerance 200 of polishing pad, thus, it is not necessary to introduce complicated calculation or control method, it is also possible to reach The effect of the controlling value of the turning speed 301 of height tolerance for relaxing polishing pad is obtained exactly.

Additionally, such as the region represented with 79d in Fig. 9 a, be formed with polishing pad 11 be downwardly concaved less than adjustment disk In the case of the groove of 111 diameter 111d, because adjustment disk 111 cannot be inserted into the groove, therefore, only with can be by adjustment disk 111 regions being adjusted, more accurately generate control data, so as to reach the effect of the apparent height of control polishing pad 11.

Step 3：On the other hand, in order to relax the surface height deviation of polishing pad, turning speed of the linkage to arm 101 The step of w is adjusted 2, so that adjustable be applied to exerting pressure (S140) for polishing pad 11 by adjustment disk 111.

That is, on being applied to exerting pressure for polishing pad 11 with adjustment disk 111 by control unit 70, by making in arm 101 The small second place P2 of turning speed on adjustment disk 111 be applied to the second of polishing pad 11 and exert pressure and be adjusted to be more than upper State and the first of above-mentioned polishing pad is applied on first position exerts pressure, can effectively be eliminated comprising relative within the shorter time Apparent height polishing pad high second place P2 region and the area comprising the low first position P1 of relative apparent height Deviation between domain.

On the other hand, the gas for depending on and being supplied to balancing gate pit C1 of exerting pressure of polishing pad is applied to by adjustment disk 111 Pressure, therefore, during chemical-mechanical polishing process, with the position of the adjustment disk 111 for being continued for turning motion w with gas Pressure applies the predetermined mode exerted pressure, and there is limitation because of the characteristic of air pressure control.

Therefore it is preferred according to the present invention that ground, controls to be incorporated into exerting pressure for adjustment disk 111 so that above-mentioned exerting pressure is advised The repulsion for being set to air pressure and magnet 170,190 is made a concerted effort.Now, more than any one in magnet 170,190 by the electromagnetism bodily form Into, the pulling force produced by the magnetic force for being incorporated into magnet 170,190, by current control, possesses quick response characteristic, from And the variation exerted pressure can be adjusted, exerted pressure by the maximum of consistently remain of exerting pressure downwards of air pressure, by because of magnetic Pulling force produced by power and making a concerted effort because of exerting pressure downwards produced by air pressure, will exert pressure be applied to throwing by adjustment disk 111 Light pad 11.

Whereby, it is connected with the turning speed w regulations process in step 2, is intending reducing or eliminating first position P1 and the In the case of the height tolerance of the polishing pad 11 on two position P2, by improving the response speed of control, make in above-mentioned control First exerting pressure more than the on second place P2 on the bigger first position P1 of the apparent height T1 of polishing pad 11 Two exert pressure, such that it is able to improve the accuracy of position needed for introducing of exerting pressure.

Step 4：On the other hand, in order to relax the surface height deviation of polishing pad, by the turning speed w of arm 101 and Exert pressure the step of being adjusted 2 and step 3 is connected, linkage controls to adjust the rotary speed (S150) of disk 111.

That is, the rotary speed of the adjustment disk 111 for being controlled by control unit 70 carries out coordinated signals 302 so that Second rotary speed v2 of the adjustment disk 111 on the low second place P2 of turning speed 302 is more than the tune on the P1 of first position The first rotary speed v1 of disk 111 is saved, such that it is able to be distributed according to required apparent height in a short time, to the table of polishing pad Face height tolerance is controlled.

For example, referring to Fig. 9 c, want highly equably to be controlled for the integral surface of polishing pad 11, and in polishing pad 11 First position P1 on height T1 less than height on second place P2, and want to reduce or eliminate in first position P1 and the In the case of the height tolerance of the polishing pad 11 on two position P2, with step 2 in turning speed w regulation concurrent process ground or Independently it is controlled so that the first rotary speed v1 on the bigger first position P1 of the apparent height T1 of polishing pad 11 is small In the second rotary speed v2 on second place P2.Thus, compared to first position P1, on second place P2, adjustment disk 111 are rapidly in contact with adjustment disk 111, and be directed wear extent it is bigger, such that it is able to eliminate in first position P1 and The height tolerance of the polishing pad 11 on second place P2.

But, in by way of being distributed come the height for controlling polishing pad 11 adjusting the rotary speed v of adjustment disk 111, Because the speed for depending on motor is adjusted, therefore, although can be precisely controlled with quick response characteristic, but exist because The rotary speed v of adjustment disk 111 changes the limited limitation of caused unit interval wear extent.Thus, revolved by coordinated signals Return speed w and exert pressure, can adjust the rotary speed v of adjustment disk 111 has efficiency high.

In the case, what the altitude information 79 of polishing pad 11 was considered as adjustment disk 111 moves up and down displacement 200, uses The ratio of control data 302 of the rotary speed v of adjustment disk 111 is in the form for moving up and down displacement 200 of adjustment disk 111, nothing Needing complicated calculation process just can simply obtain, thus, it is also possible to obtain carried out by the rotary speed v to adjustment disk 111 Adjust and the correct benefit for adjusting is carried out to the apparent height of polishing pad 11.

According to other embodiment of the invention not by the way of the height for flatly controlling polishing pad 11 on the whole, phase For the polishing layer of the certain area of chip, in order to obtain unit interval polished amount higher, lift with may be controlled to intention property The height of the polishing pad being in contact with above-mentioned certain area high.

Step 1 to the control mode of step 4 is continued until that the chemical-mechanical polishing process of chip terminates, according to step 2 To step 4, the accurately apparent height of coordinated signals polishing pad 11 during chemical-mechanical polishing process, it is hereby achieved that The specific polishing layer region for accurately adjusting chip by polishing pad 11 according to required distributional pattern within the shorter time is relevant The advantageous effects of unit interval polished amount.

Next, with reference to Figure 12, for the parameter considered by above-mentioned control unit 70 according to chemically mechanical polishing condition The method (S200) of the height of the polishing layer Le thickness distributions and polishing pad of coordinated signals chip is described in detail.

Step 1：As shown in fig. 4 a, wafer W is located at the downside of rubbing head 20, and wafer polishing layer Le is being close to polishing pad 11 State be pressurized and perform polishing process.During chemical-mechanical polishing process is performed, by optical sensor or eddy current sensor The polishing layer thickness sensor 50 of formation is located at the downside of insertion transparency window 10a, so as to the thickness of wafer polishing layer Le can be obtained Distribution, polishing layer thickness sensor 50 may also set up in polishing pad 11 and be rotated together with polishing pad 11, and by wafer W During downside, the reception signal from polishing layer Le is received, so as to obtain the thickness distribution Tw (S210) of wafer polishing layer Le.

On the other hand, the data transfer of the current thickness distribution Tw for being determined by polishing layer Thickness sensitivity portion 50 is to control unit 70。

Step 2：At the same time, during chemical-mechanical polishing process, the apparent height of polishing pad 11 is obtained in real time (S110)。

As the step of the above embodiments (S100) 1, using the known way of contact or the sensor of cordless, The apparent height distribution 79 of polishing pad 11 can be obtained, from by eddy current sensor 50 by adjustment disk 111 downside when received Receive in signal, can also obtain the apparent height distribution 79 of polishing pad 11, also adjustment disk 111 can be moved up and down displacement number It is considered as apparent height distribution (S120) according to 200 and obtains.

Step 3：Then, from the thickness distribution Tw and polishing pad of the wafer polishing layer Le obtained in step 1 and step 2 In 11 apparent height distribution 79,200, distribution of correlation coefficient Rc (S220) is calculated by control unit 70.

In the case, depending on coefficient R c is by mathematical expression 1.

[mathematical expression 1]

The height distribution 79, the polishing layer thickness of 200* the first weighted value Xp- chips of the above-mentioned polishing pads of coefficient R c= Distribution the second weighted values of Tw* Xw

In the case, the first weighted value Xp=0.1~10,

Second weighted value Xw=0.1~10

That is, to polishing pad height distribution and wafer polishing layer thickness distribution be multiplied by respectively the first weighted value and second plus Weights, determine coefficient correlation, to reflect the parameter being formulated according to polishing process.More specifically, the first weighted value Xp and second adds Weights Xw according to the species of the slurry for chemical-mechanical polishing process, the exerting pressure of rubbing head, the polishing layer species of chip, throw The polishing conditions such as the rotational velocity of light pad and chip and polishing formula empirically determine, and are pre-stored within memory.

Also, it is stored with become as the control of the adjuster 100 for controlling chemical-mechanical polishing process in memory The value of the target coefficient R i of several coefficient R c.

In the case, the first weighted value Xp and the second weighted value Xw can determine during chemical-mechanical polishing process It is any one numeral, but with the development of chemical-mechanical polishing process, it is also possible to it is defined as the numeral of change.For example, changing Learn in the initial step of mechanical polishing process, the first weighted value Xp and the second weighted value Xw are set to 2~3 respectively, and in buffer In the later steps of sequence, the first weighted value Xp and the second weighted value Xw can be set to 1.Thus, in chemical-mechanical polishing process In initial step, the thickness of adjustment wafer polishing layer and the deviation of polishing pad are focused on, and in chemical-mechanical polishing process Later steps in so that the thickness of wafer polishing layer is distributed in target thickness, so as to can both shorten polishing time, again can be with Polish out the polishing layer of required profile.

Also, the Distribution Value of target coefficient R i can also be set to certain dividing in whole chemical-mechanical polishing process Cloth, but development, or the variation with chemical-mechanical polishing process distribution.As shown in figure 14, polishing terminates time point The distribution of target coefficient R i is controlled as uniform value on the whole, such that it is able to equably control final polishing layer thickness point Cloth.

Thus, control unit 70 is formulated according to polishing condition and polishing, and reading the first weighted value Xp and second from memory adds Weights Xw, the thickness of 79,200 and wafer polishing layer is distributed from the apparent height of the polishing pad obtained in step 1 and step 2 Distribution Tw is calculated and is extracted distribution of correlation coefficient Rc.

That is, the first weighted value Xp and the second weighted value Xw are relevant to according to the polishing pad of chemical-mechanical polishing process environment The physical meaning of the weighted value of variation in altitude amount, target coefficient R i is produced according to the development of chemical-mechanical polishing process Polishing pad target distribution value physical meaning.

Step 4：Then, control unit 70 controls to adjust device 100 so that the distribution of correlation coefficient Rc for calculating in step 3 reaches To the value of target distribution of correlation coefficient Ri.That is, during chemical-mechanical polishing process, the apparent height distribution of polishing pad 11 79th, 200 it is conditioned device 100 and controls so that the target that distribution of correlation coefficient Rc is reached depending on the development with polishing process is related The value (S230) of coefficients R i.

Thus, on the big region of the thickness of wafer polishing layer, the thickness of polishing pad is relatively guided in the way of thickness, is borrowed The value of the first weighted value Xp and the second weighted value Xw is helped, the height according to polishing condition or the controllable polishing pad 11 of polishing formula becomes Dynamic speed, at the same time, with the development of polishing process, from the value of the target coefficient R i for reading from memory, can control The height value of the polishing pad 11 of the development state according to polishing process.

Also, control to adjust device 100 in control unit 170 so that coefficient R c values reach target correlation in each position During coefficients R i values, the step of to the above embodiments (S100) 2 it is similar to step 4 by the way of, control to adjust disk 111 turning speed w, rotary speed v and exert pressure.

That is, the polishing pad 11 that the thinner region of thickness compared to wafer polishing layer Le is contacted the second place (or, Second area P2), the first position of the polishing pad 11 contacted in the thicker region of thickness of wafer polishing layer Le (or, the One region P1) on, it is controlled by control unit 70 so that the turning speed w of adjustment disk 111 is further improved, according to position And the speed of the polishing pad that weares and teares by the first weighted value Xp and the second weighted value Xw of coefficient R c with the development of polishing process It is fixed.

Therefore, 2, control unit 70 are in order that coefficient R c reaches target such as the step of foregoing control method (S100) Coefficient R i and be controlled so that intend reduce polishing pad 11 apparent height first position P1 on adjuster 100 Arm 101 turning speed w less than speed on other second places P2, so that it is guaranteed that contacted on second place P2 adjusting The time for saving disk 111 is longer, as a result, the clearance of the polishing pad 11 on second place P2 is more than on the P1 of first position Polishing pad 11 clearance, such that it is able to the height tolerance of first position P1 and second place P2 is reduced to meet what is specified Weighted value Xp, Xw (S230).

For example, during plan equably controls the polishing layer thickness of wafer W on the whole, in the first place X1 of wafer W On polishing layer second thickness of the first thickness more than the polishing layer on the second place X2 in the case of, the first ground of wafer W The first position P1 of the polishing pad 11 that point X1 is contacted should control into the polishing pad 11 contacted higher than the second place X2 of wafer W Second place P2, when being introduced into identical in wafer W and exerting pressure, the first thickness in the first place can be adjusted to close to Two thickness.

Also, in order that the apparent height on the first position P1 of polishing pad 11 is more than the height on second place P2, warp Cross the adjustment disk 111 of first position P1 the first turning speed control into more than the adjustment disk 111 by second place P2 the Two turning speeds.Thus, compared to first position P1, can be contacted more with polishing pad 11 by adjustment disk 111 on second place P2 Long-time simultaneously guides abrasion quantitative change greatly, and the height such that it is able to eliminate the polishing pad 11 on first position P1 and second place P2 is inclined Difference, thus, it is possible to eliminate the thickness deviation of the first place X1 and the second place X2 of wafer W.

Now, during chemical-mechanical polishing process, due to the rotation of chip, the thickness distribution master of wafer polishing layer Le Deviation is occurred according to the radius length being separated by from rotation center.Thus, as shown in figure 13, if the first place X1 phases of chip For the second place X2, positioned at the shorter position of radius length, the then form for being surrounded by the second place X2 in the first place X1. That is, if above-mentioned second place X2 is compared to above-mentioned first place X1, positioned at the farther distance of the pivot apart from above-mentioned chip, Then said second position P2 be set to from the pivot O of above-mentioned polishing pad on the basis of radius lateral direction by above-mentioned first position The both sides of P1.In this case, to cause that coefficient R c reaches the form of target coefficient R i, the P1 and the in first position The turning speed of adjustment disk 111 is adjusted on two position P2, it is controllable to be in contact with the first place X1 and the second place X2 of chip Polishing pad 11 first position P1 and second place P2 on polishing pad height.

The arm 101 of adjuster 100 cycle control speed 301 can with 2 the step of above-mentioned control method (S100) Similar method is adjusted, so as to obtain benefit related to this.

At the same time, in order to relax the surface height deviation of polishing pad, can be with the control of the turning speed w of regulation arm 101 System is connected, so that adjustable be applied to exerting pressure (S140) for polishing pad 11 by adjustment disk 111.

That is, on being applied to exerting pressure for polishing pad 11 by adjustment disk 111 by control unit 70, by will be in arm With adjustment disk 111 the second of polishing pad 11 being applied on the low second place P2 of 101 turning speed and exerting pressure be adjusted to be more than First that above-mentioned polishing pad is applied on above-mentioned first position is exerted pressure, and can effectively be eliminated within the shorter time and be included phase To apparent height polishing pad high second place P2 region with comprising the low first position P1's of relative apparent height Deviation between region.

That is, the step of being used to above-mentioned control method (S100) about control 3 of exerting pressure of adjuster 100 is similar Method, so as to equally obtain benefit related to this.

Also, in order to relax the surface height deviation of polishing pad, can with regulation arm 101 turning speed w and exert pressure Control be connected, such that it is able to the rotary speed (S150) of coordinated signals adjustment disk 111.

That is, coordinated signals 302 are carried out to the rotary speed of adjustment disk 111 by control unit 70 so that low in turning speed 302 Second place P2 on adjustment disk 111 the second rotary speed v2 more than first of adjustment disk 111 on the P1 of first position Rotary speed v1, such that it is able to be distributed according to required apparent height in a short time, controls the surface height deviation of polishing pad.

Equally, can according to above-mentioned control method (S100) the step of 4 similar modes perform so that equally obtain with This related benefit.

As described above, according to the present invention, by adjusting the adjustment disk 111 on the apparent height region higher of polishing pad 11 Turning speed and rotary speed in any one more than, with the polishing pad of differential mode coordinated signals and adjustment disk 111 it Between time of contact, thus, improve clearance on the apparent height of polishing pad region higher, reduce the height of polishing pad Deviation so that according to the position of polishing pad, exerting pressure needed for making acts on each region of chip, such that it is able to press the difference of chip Region, is adjusted to unit interval polished amount, whereby, during chemical-mechanical polishing process, by the real-time school of adjuster 100 The height tolerance of positive polishing pad, the effect of the polishing layer thickness of wafer W is accurately controlled so as to reach.

Importantly, according to the present invention, from the thickness distribution Tw and the height tolerance of polishing pad 11 of wafer polishing layer Le Distribution 79,200 calculates distribution of correlation coefficient Rc, according to the first weighted value prestored according to polishing condition and polishing formula Xp, the second weighted value Xw and target distribution of correlation coefficient Ri, the turning speed w of coordinated signals adjuster 100, exert pressure and rotate Speed, it is considered to according to polishing condition and the characteristic of polishing formula, can accurately be adjusted during chemical-mechanical polishing process The apparent height of polishing pad, thus, terminating time point in polishing can cause that the polishing layer thickness profile of chip realizes target polished Thickness distribution, but also can significantly shorten polishing time.

Also, according to the present invention, carry out the adjustment disk 111 of reciprocal turning motion by arm 101 on polishing pad 11 During being moved in the way of with radial direction composition, measure is upper according to the adjustment disk 111 of the height tolerance of polishing pad Lower mobile displacement 200, is derived from the height tolerance data of polishing pad, so that making polishing pad by adjustment disk 111 The effect of 11 height tolerance planarization needs not move through the calculation of complexity or introduces complicated control method, and can be based on basis The amount of the moving up and down data of the adjustment disk that cycle is moved back and forth are implemented, it is not necessary to by complicated calculation or the complicated control of introducing Method, it is possible to realize the effect of the planarization process of the height tolerance for more accurately relaxing polishing pad.

More than, exemplary illustration has been carried out to the present invention by preferred embodiment, but the present invention is not limited to as described above Specific embodiment, and the technological thought for proposing in the present invention, specifically, the described scope in the claims It is interior to modify, change or improve with various forms.

Claims

1. a kind of chemical mechanical polishing apparatus, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Rubbing head, so that above-mentioned chip is pressurizeed to above-mentioned chip in the state of downside and revolves above-mentioned chip Turn；

Padded determination part, during chemical-mechanical polishing process, obtains the height tolerance on the radial direction of polishing pad；

Adjuster, with arm and adjustment disk, above-mentioned arm cycle rotation predetermined angular, above-mentioned adjustment disk centered on hinge axis Above-mentioned polishing pad is pressed into the downside of the above-mentioned arm being spaced with above-mentioned hinge axis and is rotated；

Control unit, is adjusted to the second turning speed, in said second position the turning speed of above-mentioned arm in the second place Above-mentioned polishing pad height of the height higher than the polishing pad on first position, above-mentioned second turning speed is less than by above-mentioned the First turning speed of one position.

2. chemical mechanical polishing apparatus according to claim 1, it is characterised in that

The turning speed of above-mentioned arm is controlled so as to be inversely proportional with the height tolerance of above-mentioned polishing pad.

3. chemical mechanical polishing apparatus according to claim 1, it is characterised in that

The turning speed of the above-mentioned above-mentioned arm of control unit coordinated signals and applying for above-mentioned polishing pad is applied to by above-mentioned adjustment disk Pressure, above-mentioned control unit is exerted pressure second and is adjusted to be exerted pressure more than first, and above-mentioned second to exert pressure be in above-mentioned arm Exerting pressure for above-mentioned polishing pad, above-mentioned first pressure are applied to by above-mentioned adjustment disk in the small said second position of turning speed Power is that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position.

4. chemical mechanical polishing apparatus according to claim 1, it is characterised in that

The turning speed of the above-mentioned above-mentioned arm of control unit coordinated signals and the rotary speed of above-mentioned adjustment disk, above-mentioned control unit will be Second rotary speed of the above-mentioned adjustment disk in the small said second position of above-mentioned turning speed is adjusted to be more than above-mentioned first First rotary speed of the above-mentioned adjustment disk on position.

5. a kind of chemical mechanical polishing apparatus, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Control unit, in the rotary speed of a second place enterprising step above-mentioned adjustment disk high, the above-mentioned throwing in said second position Height of the height of light pad higher than the polishing pad on first position.

6. chemical mechanical polishing apparatus according to claim 5, it is characterised in that

The turning speed of above-mentioned adjustment disk is controlled so as to proportional to the height tolerance of above-mentioned polishing pad.

7. chemical mechanical polishing apparatus according to claim 5, it is characterised in that

The above-mentioned above-mentioned adjustment disk of control unit coordinated signals and exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, it is above-mentioned Control unit is exerted pressure second and is adjusted to be exerted pressure more than first, and it is rotary speed in above-mentioned adjustment disk that above-mentioned second exerts pressure Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk in big said second position, above-mentioned first to exert pressure be upper State and exerting pressure for above-mentioned polishing pad is applied on first position.

8. a kind of chemical mechanical polishing apparatus, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Polishing layer thickness measurement portion, during chemical-mechanical polishing process, obtains the polishing layer thickness profile of above-mentioned chip；

Control unit, height distribution (79,200) and above-mentioned polishing layer based on the above-mentioned polishing pad acquired in above-mentioned padded determination part The polishing layer thickness profile (Tw) of the above-mentioned chip acquired in thickness measurement portion, calculates distribution of correlation coefficient, and so that above-mentioned The mode that distribution of correlation coefficient (Rc) reaches setting controls the turning speed of above-mentioned adjustment disk.

9. chemical mechanical polishing apparatus according to claim 8, it is characterised in that

Above-mentioned coefficient correlation is obtained by equation below, i.e., height distribution (79,200) * the first weighted value of above-mentioned polishing pad (Xp) the * the second weighted value of the polishing layer thickness profile (tw) (Xw) of-chip,

Above-mentioned first weighted value (Xp) and above-mentioned second weighted value (Xw) are set between 0.1 to 10.

10. chemical mechanical polishing apparatus according to claim 9, it is characterised in that

Also include memory, above-mentioned first weighted value being stored with above-mentioned memory based on above-mentioned chemically mechanical polishing condition and Above-mentioned second weighted value, above-mentioned first weighted value (Xp) and above-mentioned second weighted value (Xw) be according to chemically mechanical polishing condition with The value that experiment method is obtained,

Above-mentioned control unit reads above-mentioned first weighted value and above-mentioned second weighted value from above-mentioned memory, and controls above-mentioned regulation The turning speed of disk.

11. chemical mechanical polishing apparatus according to claim 9, it is characterised in that

Above-mentioned control unit is entered in the way of above-mentioned distribution of correlation coefficient is in uniform value to the turning speed of above-mentioned adjustment disk Row regulation.

12. chemical mechanical polishing apparatus according to claim 9, it is characterised in that

The turning speed of the above-mentioned above-mentioned arm of control unit coordinated signals and applying for above-mentioned polishing pad is applied to by above-mentioned adjustment disk Pressure, above-mentioned control unit is exerted pressure second and is adjusted to be exerted pressure more than first, and above-mentioned second to exert pressure be in the second place Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, the turning speed of the above-mentioned arm in said second position is controlled It is made as low, above-mentioned first to exert pressure be to be applied to exerting pressure for above-mentioned polishing pad by above-mentioned adjustment disk on first position, on The turning speed for stating the above-mentioned arm on first position is controlled as the cycle speed of the above-mentioned arm being more than in said second position Degree.

13. chemical mechanical polishing apparatus according to claim 9, it is characterised in that

The turning speed of the above-mentioned above-mentioned arm of control unit coordinated signals and the rotary speed of above-mentioned adjustment disk, above-mentioned control unit will be Second rotary speed of the above-mentioned adjustment disk in the second place is adjusted to first more than the above-mentioned adjustment disk on first position Rotary speed, the turning speed of the above-mentioned arm in said second position is controlled as low, the said arm on above-mentioned first position The turning speed in portion is controlled as the turning speed more than the above-mentioned arm in said second position.

A kind of 14. chemical mechanical polishing apparatus, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Control unit, height distribution (79,200) and above-mentioned polishing layer based on the above-mentioned polishing pad acquired in above-mentioned padded determination part The polishing layer thickness profile (Tw) of the above-mentioned chip acquired in thickness measurement portion, calculates distribution of correlation coefficient, and so that above-mentioned There is distribution of correlation coefficient (Rc) mode of specified distribution (Ri) to control the rotary speed of above-mentioned adjustment disk.

15. chemical mechanical polishing apparatus according to claim 14, it is characterised in that

16. chemical mechanical polishing apparatus according to claim 15, it is characterised in that

17. chemical mechanical polishing apparatus according to claim 14, it is characterised in that

Above-mentioned control unit is entered in the way of above-mentioned distribution of correlation coefficient is had uniform value to the turning speed of above-mentioned adjustment disk Row regulation.

18. chemical mechanical polishing apparatus according to claim 14, it is characterised in that

The rotary speed of the above-mentioned above-mentioned adjustment disk of control unit coordinated signals and above-mentioned polishing pad is applied to by above-mentioned adjustment disk Exert pressure, above-mentioned control unit is exerted pressure second and is adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in the second place It is upper that exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, by the rotation speed of above-mentioned adjustment disk in said second position Degree is controlled to height, and it is the pressure for being applied to above-mentioned polishing pad by above-mentioned adjustment disk on first position that above-mentioned first exerts pressure Power, the rotary speed of the above-mentioned adjustment disk on above-mentioned first position is controlled as more than the above-mentioned adjustment disk in said second position Rotary speed.

19. chemical mechanical polishing apparatus according to any one of claim 1 to 18, it is characterised in that

Also include the eddy current sensor rotated together with above-mentioned polishing pad,

Above-mentioned polishing pad is obtained in the reception signal received during from downside of the above-mentioned eddy current sensor by above-mentioned adjustment disk Height tolerance.

20. chemical mechanical polishing apparatus according to claim 19, it is characterised in that

Above-mentioned wafer polishing layer is metal level, and above-mentioned eddy current sensor is received containing above-mentioned at the downside by above-mentioned chip The reception signal of the polishing layer thickness information of chip.

21. chemical mechanical polishing apparatus according to any one of claim 1 to 18, it is characterised in that

Above-mentioned padded determination part is made up of displacement transducer, and upper displacement sensors are used to determine along the reciprocal of above-mentioned adjustment disk Turning motion path because above-mentioned polishing pad surface height difference produced by above-mentioned adjustment unit move up and down displacement,

Be considered as the above-mentioned displacement that moves up and down of the above-mentioned adjustment unit as acquired in upper displacement sensors by above-mentioned control unit, Along the height tolerance of the above-mentioned polishing pad in the reciprocal turning motion path of above-mentioned adjustment disk.

22. chemical mechanical polishing apparatus according to any one of claim 1 to 18, it is characterised in that

Also include magnet, above-mentioned magnet is arranged to magnetic force and applies to the direction that gravity direction is moved along above-mentioned adjustment disk is suppressed,

Above-mentioned padded determination part is formed by magnetometric sensor, and above-mentioned magnetometric sensor is used to determine along the reciprocal of above-mentioned adjustment disk Turning motion path because above-mentioned polishing pad surface height difference produced by above-mentioned adjustment unit move up and down what displacement caused The variation of above-mentioned magnetic force,

The above-mentioned regulation list that above-mentioned control unit will be obtained from the variation of the above-mentioned magnetic force determined by above-mentioned magnetometric sensor The displacement that moves up and down of unit is considered as, and the height along the above-mentioned polishing pad in the reciprocal turning motion path of above-mentioned adjustment disk is inclined Difference.

23. chemical mechanical polishing apparatus according to any one of claim 1 to 18, it is characterised in that

Above-mentioned adjuster also includes：

Drive shaft, in the above-mentioned adjustment disk of terminal part rotation driving of above-mentioned arm；

Disc carrier, is provided with balancing gate pit between disc carrier and above-mentioned drive shaft, receives the driving force transmitted by above-mentioned drive shaft, So as to carry out linkage rotation with above-mentioned drive shaft, and above-mentioned adjustment disk is held in downside；Transmission axle, mutually ties with above-mentioned disc carrier Close, so as to be moved up and down according to the pressure of above-mentioned balancing gate pit, and adjust exerting pressure downwards by above-mentioned adjustment disk；And Air pressure supply unit, for supplying air pressure to above-mentioned balancing gate pit,

Above-mentioned padded determination part is formed by flow sensor, and above-mentioned flow sensor is used to determine along the reciprocal of above-mentioned adjustment disk Turning motion path because above-mentioned polishing pad surface height difference produced by above-mentioned adjustment unit move up and down what displacement caused To the variation of the flow of above-mentioned balancing gate pit,

The above-mentioned regulation list that above-mentioned control unit will be obtained from the variation of the above-mentioned flow determined by above-mentioned flow sensor The displacement that moves up and down of unit is considered as, and the height along the above-mentioned polishing pad in the reciprocal turning motion path of above-mentioned adjustment disk is inclined Difference.

24. chemical mechanical polishing apparatus according to any one of claim 1 to 18, it is characterised in that

Above-mentioned control unit is exerted pressure first and is adjusted to be exerted pressure more than second, and above-mentioned first to exert pressure be in above-mentioned first position Upper to be applied to exerting pressure for above-mentioned polishing pad by above-mentioned adjustment disk, above-mentioned second exerts pressure is applied in said second position To exerting pressure for above-mentioned polishing pad.

25. chemical mechanical polishing apparatus according to any one of claim 3,7,12,18, it is characterised in that

The above-mentioned setting exerted pressure consistently is introduced by air pressure, and the above-mentioned change dynamic load exerted pressure comes by electromagnet Be adjusted and introduce, so as to by by air pressure and electromagnet introduced power make a concerted effort realize by above-mentioned adjustment disk What is introduced exerts pressure.

A kind of 26. cmp methods, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Polishing step, in the state of chip is located at the downside of rubbing head, polishing is pressurized to the burnishing surface of above-mentioned chip The state of pad, is rotated while being polished；

Padded determination step, during stating polishing step on the implementation, the radius of above-mentioned polishing pad is obtained by padded determination part Height tolerance on direction；

Pad modification procedure, be arranged at adjuster arm adjustment disk in the second place with the second turning speed while to above-mentioned The turning speed of the above-mentioned arm of adjuster is adjusted while be modified to above-mentioned polishing pad, upper in said second position The height for stating polishing pad is tested that to make be that higher than the height of the polishing pad on first position, above-mentioned second turning speed is less than passing through First turning speed of above-mentioned first position.

27. cmp methods according to claim 26, it is characterised in that

In above-mentioned pad modification procedure, make the turning speed of above-mentioned arm and above-mentioned polishing pad is applied to by above-mentioned adjustment disk Exert pressure linkage, and second is exerted pressure be adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in above-mentioned arm Exerting pressure for above-mentioned polishing pad, above-mentioned first pressure are applied to by above-mentioned adjustment disk in the small said second position of turning speed Power is that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position.

28. cmp methods according to claim 26, it is characterised in that

In above-mentioned pad modification procedure, the rotary speed of the turning speed of above-mentioned arm and above-mentioned adjustment disk is set to link, and it is above-mentioned Second rotary speed of the above-mentioned adjustment disk in the small said second position of above-mentioned turning speed is adjusted to be more than by control unit First rotary speed of the above-mentioned adjustment disk on above-mentioned first position.

A kind of 29. cmp methods, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

, be adjusted to the second rotary speed of the adjustment disk of adjuster on one side in the second place to be more than above-mentioned the by pad modification procedure First rotary speed of the above-mentioned adjustment disk on one position, while above-mentioned polishing pad is modified, in said second position It is higher than the height of the above-mentioned polishing pad on above-mentioned first position that the height of above-mentioned polishing pad is tested and makes.

30. cmp methods according to claim 29, it is characterised in that

In above-mentioned pad modification procedure, make the rotary speed of above-mentioned adjustment disk and above-mentioned polishing pad is applied to by above-mentioned adjustment disk Linkage of exerting pressure, and second exerted pressure be adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in above-mentioned regulation Exerting pressure for above-mentioned polishing pad, above-mentioned first are applied to by above-mentioned adjustment disk in the big said second position of the rotary speed of disk Exert pressure is that exerting pressure for above-mentioned polishing pad is applied on above-mentioned first position.

A kind of 31. cmp methods, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Polishing layer thickness determination step, during stating polishing step on the implementation, above-mentioned crystalline substance is obtained by wafer thickness determination part The thickness deviation of the polishing layer of piece；

Pad modification procedure, the height distribution based on above-mentioned polishing pad acquired in above-mentioned padded determination step is (79,200) and upper The polishing layer thickness profile (Tw) of acquired above-mentioned chip in polishing layer thickness determination step is stated, coefficient correlation point is calculated Cloth, and the turning speed of above-mentioned adjustment disk is controlled while the above-mentioned polishing pad that is modified so that above-mentioned distribution of correlation coefficient (Rc) there is specified distribution (Ri).

32. cmp methods according to claim 31, it is characterised in that

Above-mentioned coefficient correlation is obtained by equation below, i.e., and the height of above-mentioned polishing pad distribution (79,200) * the first weighted value (Xp)- The * the second weighted value of the polishing layer thickness profile (tw) (Xw) of chip,

33. cmp methods according to claim 31, it is characterised in that

Above-mentioned first weighted value and above-mentioned second weighted value are read from memory, and controls the turning speed of above-mentioned adjustment disk, on State and be stored with memory according to above-mentioned chemically mechanical polishing condition and above-mentioned first weighted value (Xp) empirically obtained With above-mentioned second weighted value (Xw).

34. cmp methods according to claim 31, it is characterised in that

In above-mentioned pad modification procedure, make the turning speed of above-mentioned arm and above-mentioned polishing pad is applied to by above-mentioned adjustment disk Exert pressure linkage, and second is exerted pressure be adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in the second place Exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, by the turning speed control of above-mentioned arm in said second position It is made as low, above-mentioned first to exert pressure be to be applied to exerting pressure for above-mentioned polishing pad by above-mentioned adjustment disk on first position, on The turning speed for stating the above-mentioned arm on first position is controlled as the cycle speed of the above-mentioned arm being more than in said second position Degree.

35. cmp methods according to claim 31, it is characterised in that

In above-mentioned pad modification procedure, the rotary speed of the turning speed of above-mentioned arm and above-mentioned adjustment disk is set to link, and will Second rotary speed of the above-mentioned adjustment disk in the second place is adjusted to first more than the above-mentioned adjustment disk on first position Rotary speed, the above-mentioned arm turning speed in the second place is controlled as low above-mentioned arm on above-mentioned first position Turning speed is controlled as the turning speed more than the above-mentioned arm in said second position.

A kind of 36. cmp methods, chemical-mechanical polishing process is implemented with the state that chip is in contact with polishing pad, its It is characterised by, including：

Pad modification procedure, the height distribution based on above-mentioned polishing pad acquired in above-mentioned padded determination step is (79,200) and upper The polishing layer thickness profile (Tw) of acquired above-mentioned chip in polishing layer thickness determination step is stated, coefficient correlation point is calculated Cloth, and the rotary speed of above-mentioned adjustment disk is controlled while the above-mentioned polishing pad that is modified so that above-mentioned distribution of correlation coefficient (Rc) there is setting (Ri).

37. cmp methods according to claim 36, it is characterised in that

38. cmp method according to claim 37, it is characterised in that

39. cmp methods according to claim 36, it is characterised in that

In above-mentioned pad modification procedure, make the rotary speed of above-mentioned adjustment disk and above-mentioned polishing pad is applied to by above-mentioned adjustment disk Linkage of exerting pressure, and second exerted pressure be adjusted to be exerted pressure more than first, above-mentioned second to exert pressure be in the second place It is upper that exerting pressure for above-mentioned polishing pad is applied to by above-mentioned adjustment disk, by the rotation speed of above-mentioned adjustment disk in said second position Degree is controlled to height, and it is the pressure for being applied to above-mentioned polishing pad by above-mentioned adjustment disk on first position that above-mentioned first exerts pressure Power, the rotary speed of the above-mentioned adjustment disk on above-mentioned first position is controlled as more than the above-mentioned adjustment disk in said second position Rotary speed.

40. cmp method according to any one of claim 31 to 39, it is characterised in that above-mentioned pad is modified Step by following manner realize,

During above-mentioned adjustment disk carries out reciprocal turning motion relative to above-mentioned polishing pad, moving up and down for above-mentioned adjustment disk is determined Displacement, and by the height tolerance that determining displacement value is considered as above-mentioned polishing pad that moves up and down of above-mentioned adjustment disk.

41. cmp methods according to claim 40, it is characterised in that

The above-mentioned determining displacement value that moves up and down is come by for determining the displacement transducer for moving up and down displacement of above-mentioned adjustment disk Obtain.

42. cmp methods according to claim 40, it is characterised in that

The above-mentioned determining displacement value that moves up and down is obtained by the magnetic force variation of magnetometric sensor measure magnet, above-mentioned magnet Above-mentioned adjuster is arranged in the way of making magnetic force along the direction applying that above-mentioned adjustment disk is moved to gravity direction is suppressed.

43. cmp methods according to claim 40, it is characterised in that

The above-mentioned determining displacement value that moves up and down is to determine the flow variation to balancing gate pit from flow sensor to obtain, above-mentioned Balancing gate pit is connected with air pressure supply unit and above-mentioned adjustment disk is stressed on into above-mentioned polishing pad.

44. cmp method according to any one of claim 31 to 39, it is characterised in that change in above-mentioned pad In property step,

Above-mentioned adjustment disk is applied to exerting pressure less than above-mentioned adjustment disk and the disk for fixing above-mentioned adjustment disk for above-mentioned polishing pad The deadweight sum of support.

45. cmp method according to any one of claim 31 to 39, it is characterised in that

From downside of the eddy current sensor rotated together with above-mentioned polishing pad by above-mentioned adjustment disk when the reception signal that is received The middle height tolerance for obtaining above-mentioned polishing pad.

46. cmp methods according to claim 45, it is characterised in that

Above-mentioned eddy current sensor determines the polishing layer thickness of above-mentioned chip at the downside by above-mentioned chip.

47. cmp method according to any one of claim 27,30,34,39, it is characterised in that

The above-mentioned setting exerted pressure consistently is introduced by air pressure, and the above-mentioned change dynamic load exerted pressure comes by electromagnet It is adjusted and introduces, so as to makes a concerted effort to realize drawing by above-mentioned adjustment disk by by the introduced power of air pressure and electromagnet What is entered exerts pressure.