CN106848026B - Micro- LED component and display device - Google Patents
Micro- LED component and display device Download PDFInfo
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- CN106848026B CN106848026B CN201710078454.4A CN201710078454A CN106848026B CN 106848026 B CN106848026 B CN 106848026B CN 201710078454 A CN201710078454 A CN 201710078454A CN 106848026 B CN106848026 B CN 106848026B
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- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000002346 layers by function Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002096 quantum dot Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of micro- LED components, including outgoing electrode, opposite electrode and light emitting functional layer, the outgoing electrode and the opposite electrode are oppositely arranged, the light emitting functional layer is arranged between the outgoing electrode and the opposite electrode, the outgoing electrode is nano metal film layer, and the present invention also provides a kind of display devices including above-mentioned micro- LED component.Micro- LED component provided by the invention, can be improved the extraction efficiency of the micro- LED component of light.
Description
Technical field
The invention belongs to field of display technology, and in particular to a kind of micro- LED component and display device.
Background technique
Currently, micro- LED component generally includes the first electrode and second electrode being oppositely arranged and is arranged in first electrode
Light emitting functional layer between second electrode can excite light emitting functional layer when loading electric signal in first electrode and second electrode
It shines, the optical signal that light emitting functional layer issues can be projected from first electrode, be shone to realize.
However, existing micro- LED component is found in practical applications：The light extraction efficiency of micro- LED component is lower.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of micro- LED component and
Display device can be improved the extraction efficiency of the micro- LED component of light.
One of in order to solve the above problem, the present invention provides a kind of micro- LED component, including outgoing electrode, opposite electrode and
Light emitting functional layer, the outgoing electrode and the opposite electrode are oppositely arranged, and the light emitting functional layer setting is in the radio out
Between pole and the opposite electrode, the outgoing electrode is nano metal film layer.
Preferably, the nano metal film layer is aluminum membranous layer；The light emitting functional layer is UV-light luminous functional layer.
Preferably, the Thickness range of the aluminum membranous layer is 3nm~7nm.
Preferably, the Thickness range of the aluminum membranous layer is 4.5nm~5.5nm.
Preferably, the wave-length coverage for the ultraviolet light that the UV-light luminous functional layer issues is 260nm~300nm.
Preferably, the opposite electrode has the function of reflected light signal.
Preferably, dielectric layer is provided in the light emitting functional layer；The central area of the dielectric layer is provided with opening；
The outgoing electrode is formed on the surface of the dielectric layer and the surface corresponding with opening of the light emitting functional layer.
Preferably, photoluminescent layers are additionally provided on the outgoing electrode, the light for being emitted the outgoing electrode
The light of color needed for exciting the photoluminescent layers to issue.
Preferably, the photoluminescent layers include quantum dot light emitting layer or light-emitting phosphor layer.
The present invention also provides a kind of display device, micro- LED component including the above-mentioned offer of the present invention.
The invention has the advantages that：
In the present invention, it can realize and to optical signal collect well as outgoing electrode using nanometer metallic film
Emit again, so as to improve the extraction efficiency of the micro- LED component of light；Also, the transparency of nanometer metallic film can satisfy out
Requirement of the radio pole as outgoing.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for micro- LED component that the embodiment of the present invention 1 provides；
Fig. 2 is the structural schematic diagram for micro- LED component that the embodiment of the present invention 2 provides.
Appended drawing reference includes：1, it is emitted electrode；2, opposite electrode；3, light emitting functional layer；4, dielectric layer；5, luminescence generated by light
Layer；6, dislocation.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The micro- LED component and display device provided is described in detail.
Embodiment 1
Fig. 1 is the structural schematic diagram for micro- LED component that the embodiment of the present invention 1 provides；Referring to Fig. 1, the present embodiment 1 provides
Micro- LED component, including outgoing electrode 1, opposite electrode 2 and light emitting functional layer 3, wherein so-called outgoing electrode 1 refers to as light
The electrode of signal outgoing；Outgoing electrode 1 and opposite electrode 2 are oppositely arranged, and the setting of light emitting functional layer 3 is in outgoing electrode 1 and opposed
Between electrode 2, specifically, light emitting functional layer 3 includes p type semiconductor layer, P-N junction and n type semiconductor layer；Outgoing electrode 1 is to receive
Rice metallic diaphragm.
In the present embodiment, it can realize and to optical signal receive well as outgoing electrode using nanometer metallic film
Collection emits again, so as to improve the light extraction efficiency of micro- LED component；Also, the transparency of nano level metal film can expire
Requirement of the foot outgoing electrode as outgoing.
Preferably, nano metal film layer is aluminum membranous layer；Light emitting functional layer 3 is UV-light luminous functional layer, the nanometer aluminum
Film layer has very high light extraction efficiency to ultraviolet light, can also collect well to ultraviolet light, thus can be fine
Improve the extraction efficiency of micro- LED component in ground.
It is further preferred that the Thickness range of aluminum membranous layer is 3nm~7nm, to realize the collection of light well.
It is further preferred that the Thickness range of aluminum membranous layer is 4.5nm~5.5nm, this way it is possible to avoid part light
It is reflected onto opposite electrode 2, so as to further increase the light extraction efficiency of micro- LED component.
It is further preferred that the wave-length coverage for the ultraviolet light that UV-light luminous functional layer issues is 260nm~300nm, in this way, should
Aluminum membranous layer is with having higher light extraction efficiency to the ultraviolet light in the wave-length coverage.
Additionally preferably, opposite electrode 2 has the function of reflected light signal, in this way, outgoing electrode 1 is reflexed to opposed electricity
The light of pole 2 reflexes to outgoing electrode 1 again and projects again, to guarantee light extraction efficiency.
In addition, in the present embodiment, being additionally provided with photoluminescent layers 5 on outgoing electrode 1, going out for using radio pole 1
The phot-luminescence electroluminescent layer 5 penetrated issues the light of required color.It illustrates, it is assumed that light emitting functional layer 3 is UV-light luminous function
Ergosphere, but in order to obtain the light of other colors, then actually required face can be obtained by the way that the photoluminescent layers 5 of corresponding color are arranged
The light of color.Therefore, the scope of application of micro- LED component can be improved, by the photoluminescent layers 5 so as to improve micro- LED device
The practicability of part.
Specifically, photoluminescent layers 5 include but is not limited to：Quantum dot light emitting layer or light-emitting phosphor layer.
Embodiment 2
Fig. 2 is the structural schematic diagram for micro- LED component that the embodiment of the present invention 2 provides.Referring to Fig. 2, the present embodiment 2 provides
Micro- LED component compared with micro- LED component that above-described embodiment 1 provides, it is same include outgoing electrode 1, opposite electrode 2, shine
Functional layer 3 and photoluminescent layers 5, since the position of outgoing electrode 1, opposite electrode 2, light emitting functional layer 3 and photoluminescent layers 5 is closed
System and function have been carried out in above-described embodiment 1 to be described in detail, and details are not described herein.
The difference of the present embodiment and above-described embodiment 1 is only described below.Specifically, in the present embodiment, in luminous function
Dielectric layer 4 is provided on ergosphere 3；The central area of dielectric layer 4 is provided with opening；Outgoing electrode 1 is formed in the surface of dielectric layer 4
With light emitting functional layer 3 on surface corresponding with opening, as shown in Figure 2.
Why in the present embodiment 2 be arranged dielectric layer 4, be because：Micro- LED array is divided into micro- LED device one by one
When part, edge region is easy in scribing line and corrosion process and generates a large amount of lattice defect, so as to cause the position of marginal position
Wrong 6 density are higher than 6 density of dislocation of center, so that the light-emitting uniformity that will cause multiple micro- LED components is not high and each
The stability of micro- LED component is bad, by the dielectric layer 4 for central area being opening, each micro- LED component can be made equal
Go out light from the opening, therefore, the light-emitting uniformity of multiple micro- LED components and the stability of each micro- LED component can be improved.
Embodiment 3
The embodiment of the present invention 3 provides a kind of display device, including micro- LED device shown in the above embodiment of the present invention 1 or 2
Part.
Display device provided in an embodiment of the present invention, the micro- LED for using the above embodiment of the present invention 1 or 2 to provide due to it
Device, it is thus possible to improve the display effect of display device.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of micro- LED component, including outgoing electrode, opposite electrode and light emitting functional layer, the outgoing electrode and described opposed
Electrode is oppositely arranged, and the light emitting functional layer is arranged between the outgoing electrode and the opposite electrode, which is characterized in that institute
Stating outgoing electrode is nano metal film layer；
Dielectric layer is provided in the light emitting functional layer；
The central area of the dielectric layer is provided with opening；
The outgoing electrode is formed on the surface of the dielectric layer and the surface corresponding with opening of the light emitting functional layer.
2. micro- LED component according to claim 1, which is characterized in that the nano metal film layer is aluminum membranous layer；
The light emitting functional layer is UV-light luminous functional layer.
3. micro- LED component according to claim 2, which is characterized in that the Thickness range of the aluminum membranous layer be 3nm~
7nm。
4. micro- LED component according to claim 2, which is characterized in that the Thickness range of the aluminum membranous layer is 4.5nm
~5.5nm.
5. micro- LED component according to claim 2, which is characterized in that the UV-light luminous functional layer issues ultraviolet
The wave-length coverage of light is 260nm~300nm.
6. micro- LED component according to claim 1, which is characterized in that the opposite electrode has the function of reflected light signal
Energy.
7. micro- LED component according to claim 1, which is characterized in that be additionally provided with photic hair on the outgoing electrode
Photosphere, the light of color needed for the light for being emitted the outgoing electrode excites the photoluminescent layers to issue.
8. micro- LED component according to claim 7, which is characterized in that the photoluminescent layers include quantum dot light emitting layer
Or light-emitting phosphor layer.
9. a kind of display device, which is characterized in that including micro- LED component described in any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710078454.4A CN106848026B (en) | 2017-02-14 | 2017-02-14 | Micro- LED component and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710078454.4A CN106848026B (en) | 2017-02-14 | 2017-02-14 | Micro- LED component and display device |
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| Publication Number | Publication Date |
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| CN106848026A CN106848026A (en) | 2017-06-13 |
| CN106848026B true CN106848026B (en) | 2018-11-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106997745A (en) | 2017-06-15 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of display device and its driving method |
| TWI641778B (en) | 2017-12-19 | 2018-11-21 | 宏碁股份有限公司 | Micro lighting device |
| CN109031830A (en) * | 2018-08-27 | 2018-12-18 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, liquid crystal display panel |
| CN110690328B (en) * | 2019-10-16 | 2021-05-18 | 福州大学 | No-electrical contact mu LED light-emitting device based on wavelength down-conversion |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810840A (en) * | 2014-12-29 | 2016-07-27 | 固安翌光科技有限公司 | Organic electroluminescent device |
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| US7126266B2 (en) * | 2004-07-14 | 2006-10-24 | The Board Of Trustees Of The University Of Illinois | Field emission assisted microdischarge devices |
| JP2010123606A (en) * | 2008-11-17 | 2010-06-03 | Seiko Instruments Inc | Substrate with through electrode, and methods of manufacturing light-emitting device and substrate with through electrode |
| CN205194746U (en) * | 2015-12-15 | 2016-04-27 | 昆山工研院新型平板显示技术中心有限公司 | Organic light -emitting diode device and have its display panel |
| CN105514292A (en) * | 2016-01-05 | 2016-04-20 | 深圳市华星光电技术有限公司 | OLED device and manufacturing method thereof, and OLED display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105810840A (en) * | 2014-12-29 | 2016-07-27 | 固安翌光科技有限公司 | Organic electroluminescent device |
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