CN106848013B - A kind of semiconductor light-emitting-diode and preparation method thereof - Google Patents

A kind of semiconductor light-emitting-diode and preparation method thereof Download PDF

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CN106848013B
CN106848013B CN201710078616.4A CN201710078616A CN106848013B CN 106848013 B CN106848013 B CN 106848013B CN 201710078616 A CN201710078616 A CN 201710078616A CN 106848013 B CN106848013 B CN 106848013B
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pillar
nano
layer
quantum dot
arrangement
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CN106848013A (en
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郑锦坚
王星河
康俊勇
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JIANGSU POPPULA SEMICONDUCTOR CO.,LTD.
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郑锦坚
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region

Abstract

The invention discloses a kind of semiconductor light-emitting-diode and preparation method thereof, disclosed structure and the semiconductor light-emitting-diode using production method production are able to ascend luminous efficiency and luminous intensity.In order to achieve the above object, a kind of semiconductor light-emitting-diode disclosed by the invention includes substrate, buffer layer, first semiconductor layer of the first conductive type, multiple quantum wells has the active layer in V-arrangement hole, the second semiconductor layer and contact layer of the Al quantum dot of multicycle/AlN nano-pillar/Ga quantum dot/GaN nano-pillar and the second conductive type；The corresponding V-arrangement hole in Quantum Well lower surface, center, the upper surface of active layer position has Al quantum dot/AlN nano-pillar/Ga quantum dot, and each cycle thickness is identical as quantum well layer thickness；The barrier layer of Quantum Well, which corresponds to V-arrangement hole position, has GaN nano-pillar, and the thickness of each cycle is identical as barrier layer.

Description

A kind of semiconductor light-emitting-diode and preparation method thereof
Technical field
The present invention relates to semiconductor photoelectric device field more particularly to nitride semiconductor LED and production methods Field.
Background technique
Now, light emitting diode (LED), especially nitride semiconductor LED because of its higher luminous efficiency, It has obtained and has been widely applied in general lighting field.Because of the bottom existing defects of nitride semiconductor LED, cause to give birth to Defect extension will form V-arrangement hole (V-pits) when long Quantum Well.The potential barrier of the side wall in V-arrangement hole is greater than the potential barrier of multiple quantum wells, leads It sends a telegraph son and is not easy the defect non-radiative recombination center that transition enters V-arrangement hole, meanwhile, V-arrangement cheats what side wall can issue multiple quantum wells Light is reflected, change light emitting angle, reduce the angle of total reflection to shadow out ring, promoted light extraction efficiency, improving luminous efficiency and Luminous intensity.
Specifically, traditional nitride semiconductor LED, because lattice mismatch and thermal mismatching are in semiconductor growing mistake It will form defect in journey, the dislocation can extend to form V-arrangement hole (V-pits) when growing multiple quantum wells, as shown in Figure 1；Because V-arrangement is cheated Side wall potential barrier be greater than multiple quantum wells potential barrier, cause electronics be not easy transition enter V-arrangement hole defect non-radiative recombination center, Meanwhile the light that V-arrangement hole side wall can issue multiple quantum wells reflects, and light emitting angle can be changed, and reduces the angle of total reflection to light out It influences, promotes light extraction efficiency, improving luminous efficiency and luminous intensity.The V-arrangement of traditional multiple quantum wells cheats opening upwards, with The opening of the increase of Quantum Well logarithm, V-arrangement hole is bigger, but opening angle and shape are difficult to control, and excessive opening can generate A large amount of non-radiative recombination centers, cause brightness to decline, and light emitting diode can be made by being finally difficult to the opening angle controlled and shape Luminous efficiency be greatly affected.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, the technical problem to be solved by the present invention is that providing a kind of semiconductor hair Optical diode and preparation method thereof, disclosed structure and the semiconductor light-emitting-diode for using the production method to make can Improving luminous efficiency and luminous intensity.
In order to achieve the above object,
A kind of semiconductor light-emitting-diode disclosed by the invention is achieved using following technical scheme：
A kind of semiconductor light-emitting-diode, including substrate, buffer layer, the first semiconductor layer of the first conductive type, volume Sub- trap has the active layer in V-arrangement hole, Al quantum dot/AlN nano-pillar/Ga quantum dot/GaN nano-pillar and second of multicycle The second semiconductor layer and contact layer of conductivity type；The corresponding V-arrangement in Quantum Well lower surface, center, the upper surface of active layer cheats position With Al quantum dot/AlN nano-pillar/Ga quantum dot, each cycle thickness is identical as quantum well layer thickness；The barrier layer pair of Quantum Well Answer V-arrangement hole position that there is GaN nano-pillar, the thickness of each cycle is identical as barrier layer.The V-arrangement hole of multiple quantum wells has the multicycle Al quantum dot/AlN nano-pillar/Ga quantum dot/GaN nano-pillar, periodicity are identical as multiple quantum wells；The AlN nano-pillar Width remain unchanged, the width of GaN nano-pillar becomes more with the period and becomes larger, thus match with the form in V-arrangement hole and not with V Shape cheats contact of incline plane, forms the GaN/AlN nano-pillar of combination of long drives and drop shots.The AlN/GaN nano-pillar of combination of long drives and drop shots promotes Quantum Well light Outgoing efficiency, and dislocation line bending is made to stop V-arrangement hole defect, reduce non-radiative recombination；Al quantum dot/AlN nano-pillar/Ga quantum Point makes Quantum Well generate quantum effect and surface plasmon resonance coupling effect, the quantum efficiency of Quantum Well is promoted, to mention Rise the luminous efficiency of semiconductor light-emitting-diode.
A kind of preferred embodiment as a kind of semiconductor light-emitting-diode of the invention：Multiple quantum wells V-arrangement hole tool There is Al quantum dot/AlN nano-pillar/Ga quantum dot/GaN nano-pillar of multicycle, nano-pillar matches with V-arrangement hole, and interface is mutual It does not contact.
A kind of preferred embodiment as a kind of semiconductor light-emitting-diode of the invention：The active layer Multiple-quantum The periodicity of trap is identical as the Al of multicycle quantum dot/AlN nano-pillar/Ga quantum dot/periodicity of GaN nano-pillar, periodicity x >=3, preferred cycle is 8 pairs.
A kind of preferred embodiment as a kind of semiconductor light-emitting-diode of the invention：The amount of the active layer Sub- trap is identical with Al quantum dot/AlN nano-pillar/Ga quantum dot thickness, with a thickness of 1.0~5.0nm, preferred thickness 3.5nm.
A kind of preferred embodiment as a kind of semiconductor light-emitting-diode of the invention：The barrier layer of the active layer It is identical with the thickness of GaN nano-pillar, with a thickness of 5.0~20.0nm, preferred thickness 10.0nm.
A kind of preferred embodiment as a kind of semiconductor light-emitting-diode of the invention：The Al quantum dot and Ga The shape of quantum dot is spherical shape, hemispherical, pyramid, cone cell etc., and size about 0.5~5.0nm, preferably diameter are 1.0nm.
The invention also discloses a kind of production methods of any above-mentioned semiconductor light-emitting-diode, which is characterized in that packet Containing following steps：
1) on substrate successively grown buffer layer, the first conductive type the first semiconductor layer and have V-arrangement cheat multiple quantum wells Active layer, formed the first template；2) location technology is cheated using V-arrangement, positioning V-arrangement hole records its seat in the position of the first template Scale value；3) one layer of mask layer is deposited in the first template surface, positioning etching technique is cheated using V-arrangement, according to the coordinate of step 2) by V The multiple quantum wells region of the mask layer etching of shape hole top, non-V-arrangement hole retains mask layer, forms the second template；4) by the second mould Plate is put into reaction chamber, at 600-900 degrees Celsius of low temperature, is passed through TMAl depositing Al, and time T1, Al are in hypersaturated state, Then, rise to 900-1200 degrees Celsius of high temperature, be passed through NH3 carry out semiconductor reason, time T2, growth time T1/T2 >=2, from And preventing Al from all nitrogenizing, the Al nitrogenized generates AlN nano-pillar, and the Al not nitrogenized generates Al quantum dot；Then, it is down to low Warm 600-900 degrees Celsius, it is passed through TMGa deposition Ga, time T3, so that Ga is in hypersaturated state, then, rises to high temperature 900- 1200 degrees Celsius, it is passed through NH3Nitrogen treatment is carried out, time T4, growth time T3/T4 >=2x (x is amount of cycles) make Ga not It can nitrogenize completely, the Ga nitrogenized grows into GaN nano-pillar, and the Ga not nitrogenized generates Ga quantum dot, meanwhile, make GaN nano-pillar Width increase with the rising in period.5) the Al amount of multicycle is grown by step 4) is repeated according to the number of cycles of Quantum Well Sub- point/AlN nano-pillar/Ga quantum dot/GaN nano-pillar cheats exact matching and the not contact of incline plane with V-arrangement hole with V-arrangement.6) it is receiving The second semiconductor layer and contact layer of successively epitaxial growth the second conductive type, production above the multiple quantum wells in rice column filling V-arrangement hole At the epitaxial wafer of semiconductor light-emitting-diode.
As a kind of a kind of preferred embodiment of the production method of semiconductor light-emitting-diode disclosed by the invention：It is described V-arrangement hole location technology using atomic force microscope test the first template V-arrangement cheat position, record its coordinate；Or using yin Pole fluorescence Mapping technology cheats principle not luminous and that multiple quantum wells region is luminous using V-arrangement, and positioning V-arrangement is cheated position, recorded Its coordinate.
As a kind of a kind of preferred embodiment of the production method of semiconductor light-emitting-diode disclosed by the invention：It is described V-arrangement hole positioning etching technique use ICP dry etching, according to V-arrangement hole coordinate position to its top exposure mask accurately lost It carves.
As a kind of a kind of preferred embodiment of the production method of semiconductor light-emitting-diode disclosed by the invention：It is described Mask layer material be photoresist, SiO2, the mask materials such as SiNx, PS ball.
Present invention has the advantages that：
A kind of semiconductor light-emitting-diode disclosed by the invention and preparation method thereof provides a kind of multiple quantum wells V-arrangement hole tool There is Al quantum dot/AlN nano-pillar/Ga quantum dot/GaN nano-pillar semiconductor light-emitting-diode and its system of multicycle inverted V-shaped Make method comprising substrate, buffer layer, the first semiconductor layer of the first conductive type, the multiple quantum wells V-arrangement hole of active layer have more Second semiconductor layer of the Al quantum dot of period inverted V-shaped/AlN nano-pillar/Ga quantum dot/GaN nano-pillar and the second conductive type And contact layer.The corresponding V-arrangement hole in Quantum Well lower surface, center, the upper surface of active layer position is respectively provided with Al quantum dot/AlN Nano-pillar/Ga quantum dot, barrier layer, which corresponds to V-arrangement hole position, has GaN nano-pillar, the second semiconductor layer of the second conductive type and contact Layer.The AlN/GaN nano-pillar of combination of long drives and drop shots promotes Quantum Well light emission efficiency, and dislocation line bending is made to stop V-arrangement hole defect；Al Quantum dot/AlN nano-pillar/Ga quantum dot makes Quantum Well generate quantum effect and surface plasmon resonance coupling effect, is promoted The quantum efficiency of Quantum Well, to promote the luminous efficiency of semiconductor light-emitting-diode.
Detailed description of the invention
Fig. 1 is the schematic diagram for the semiconductor light-emitting-diode that tradition has V-arrangement hole multiple quantum wells；
Fig. 2 is a kind of schematic diagram of specific embodiment of the invention；
Fig. 3 is the effect diagram of specific embodiment shown in Fig. 2.
Description of symbols：
100：Substrate, 101：Buffer layer, 102：First semiconductor layer of the first conductive type, 103：The Quantum Well of active layer Barrier layer, 104：The well layer of the Quantum Well of active layer, 105：The V-arrangement of active layer is cheated, and 106：Al quantum dot, 107：AlN nano-pillar, 108：Ga quantum dot, 109：GaN nano-pillar, 110：Second semiconductor layer of the second conductive type, 111：The contact of the second conductive type Layer, 112：Quantum effect and surface plasmon resonance coupling effect.
Specific embodiment
The specific embodiment of the invention is described with reference to the accompanying drawings and embodiments：
As shown in figures 2-3, it illustrates a specific embodiment of the invention, as shown, disclosed by the invention a kind of half A kind of semiconductor light-emitting-diode of conductor light emitting diode the first half is led including substrate 100, buffer layer 101, the first conductive type Body layer 102, the active layer with V-arrangement hole multiple quantum wells, Al quantum dot 106, AlN nano-pillar 109, the Ga quantum dot of multicycle 108, the contact layer 111 of the second semiconductor layer 110 and the second conductive type of GaN nano-pillar 109 and the second conductive type；
The corresponding V-arrangement hole in 104 lower surface of well layer, center, the upper surface of the Quantum Well of active layer position is respectively provided with Al amount Sub- point, AlN nano-pillar, Ga quantum dot, the barrier layer 103 of the Quantum Well of active layer corresponding V-arrangement hole position have GaN nano-pillar, V-arrangement Hole forms Al quantum dot, AlN nano-pillar, the Ga quantum dot, GaN nano-pillar of multicycle；
The width of the AlN nano-pillar remains unchanged, and the width of GaN nano-pillar becomes more with the period and becomes larger, thus and V The form in shape hole matches and does not cheat contact of incline plane with V-arrangement, forms GaN nano-pillar, the AlN nano-pillar of combination of long drives and drop shots.
As a kind of preferred embodiment of semiconductor light-emitting-diode disclosed by the invention：Multiple quantum wells V-arrangement hole has more The Al quantum dot of the up-side down triangle in period, AlN nano-pillar, Ga quantum dot, GaN nano-pillar, nano-pillar match with V-arrangement hole, and Interface is not in contact with each other.
As a kind of preferred embodiment of semiconductor light-emitting-diode disclosed by the invention：The period of active layer multiple quantum wells Number, periodicity x >=3 identical as the Al quantum dot of multicycle, AlN nano-pillar, Ga quantum dot, the periodicity of GaN nano-pillar.
As a kind of preferred embodiment of semiconductor light-emitting-diode disclosed by the invention：Al quantum dot/AlN of each cycle Nano-pillar/Ga quantum dot thickness it is identical with the well layer thickness of each cycle Quantum Well (Al quantum dot/AlN nano-pillar of each cycle/ Ga quantum dot refers to an AlN nano-pillar and Ga quantum dot and Al quantum dot that the AlN nano-pillar upper and lower surface is arranged in), it is thick Degree is 1.0~5.0nm；The thickness of the GaN nano-pillar of each cycle is identical with the barrier layer thickness of active layer, with a thickness of 5.0~ 20.0nm。
As a kind of preferred embodiment of semiconductor light-emitting-diode disclosed by the invention：The Al quantum dot and Ga quantum The shape of point is one of spherical shape, hemispherical, pyramid, cone cell or a variety of, and size is 0.5~5.0nm.The present embodiment institute The size stated refers to the size of most width position.
As a kind of specific embodiment of the production method of semiconductor light-emitting-diode disclosed by the invention, as shown in Fig. 2, It includes following steps：
Step 1)：In MOCVD metal organic chemical vapor deposition equipment, the epitaxial growth buffer 101 on substrate 100 With the first semiconductor layer of the first conduction type, which is n-type doping layer, and it is 5E18~5E19cm that Si, which mixes concentration,-3, epitaxial growth The multiple quantum well active layer that the barrier layer 103 of the Quantum Well of the well layer 104 and active layer of the Quantum Well of traditional active layer forms, Amount of cycles is 8 pairs, and the well layer of Quantum Well is with a thickness of 3.5nm, barrier layer thickness 10.0nm；There is Quantum Well V-arrangement to cheat (V-shap Pits) 105, form the first template；
Step 2)：Location technology is cheated using V-arrangement, records the coordinate position in each V-arrangement hole.Using atomic force microscope The V-arrangement that AFM tests the first template cheats position, records its coordinate；Or cathode-luminescence Mapping technology is used, it is not sent out using V-arrangement hole The luminous principle in light and multiple quantum wells region, positioning V-arrangement cheat position, record its coordinate；
Step 3)：One layer of SiO is being deposited in the first template surface using vapor deposition board2Mask layer, with a thickness of 200nm；Benefit Positioning etching technique is cheated with V-arrangement, coordinate is cheated according to the V-arrangement of step 2 and is lost the mask layer of V-arrangement hole top using ICP dry etching It carves, the multiple quantum wells region in non-V-arrangement hole retains mask layer, forms the second template；
Step 4)：Second template is put into reaction chamber, at 750 degrees Celsius of low temperature, is passed through TMAl depositing Al, time T1 =16s, Al are in hypersaturated state, then, rise to 1200 degrees Celsius of high temperature, are passed through NH3Carry out semiconductor reason, time T2= 8s, growth time T1/T2=2, to prevent Al from all nitrogenizing, the Al not nitrogenized generates Al quantum dot 106 and has nitrogenized Al grows into AlN nano-pillar 107, and 106 form of Al quantum dot is spherical, size about 1.0nm；The thickness and amount of AlN nano-pillar 107 The thickness of sub- trap is identical, with a thickness of 3.5nm；Then, 750 degrees Celsius of low temperature are down to, TMGa deposition Ga, time T3, Ga are passed through In hypersaturated state, then, 1100 degrees Celsius of high temperature is risen to, NH is passed through3Carry out nitrogen treatment, time T4, growth time T3/T4>=2x (x is amount of cycles), such as：Period 1 T3=8s, T4=4s, second round T3=16s, T4=4s, the Three cycle T 3=24s, T4=4s, and so on, so that the width of GaN nano-pillar be made to increase with the rising in period, formation is fallen The shape of the 108 overall distribution shape of GaN nano-pillar 109 and Ga quantum dot of triangle, Ga quantum dot 108 is spherical shape, and size is about The height of 1.0nm, GaN nano-pillar 109 and the barrier layer of Quantum Well are identical, about 10.0nm.
Step 5)：According to the number of cycles of Quantum Well by step 4) is repeated, the Al quantum dot 106/ of multicycle inverted V-shaped is grown AlN nano-pillar 107/Ga quantum dot 108/GaN nano-pillar 109 cheats exact matching and the not contact of incline plane with V-arrangement hole with V-arrangement.
Step 6)：Successively the second the half of epitaxial growth the second conductive type above the multiple quantum wells in nano-pillar filling V-arrangement hole Conductor layer 110 and contact layer 111, are fabricated to the epitaxial wafer of semiconductor light-emitting-diode.
The AlN/GaN nano-pillar of combination of long drives and drop shots promotes Quantum Well light emission efficiency, and makes dislocation line bending that V-arrangement hole be stopped to lack It falls into, reduces non-radiative recombination；Al quantum dot/AlN nano-pillar/Ga quantum dot makes Quantum Well generate quantum effect and surface etc. from sharp First resonance coupling effect 112, as shown in figure 3, the quantum efficiency of Quantum Well is promoted, to promote the hair of semiconductor light-emitting-diode Light efficiency.
The preferred embodiment for the present invention is explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned implementations Mode within the knowledge of a person skilled in the art can also be without departing from the purpose of the present invention It makes a variety of changes, these variations are related to the relevant technologies well-known to those skilled in the art, these both fall within the invention patent Protection scope.
Many other changes and remodeling can be made by not departing from the spirit and scope of the present invention.It should be appreciated that the present invention is not It is limited to specific embodiment, the scope of the present invention is defined by the following claims.

Claims (9)

1. a kind of semiconductor light-emitting-diode, it is characterised in that：Including substrate, buffer layer, the first conductive type the first semiconductor Layer, the active layer with V-arrangement hole multiple quantum wells, the Al quantum dot of multicycle, AlN nano-pillar, Ga quantum dot, GaN nano-pillar, with And the second conductive type the second semiconductor layer and the second conductive type contact layer；
The corresponding V-arrangement hole in well layer lower surface, center, the upper surface of the Quantum Well of active layer position is respectively provided with Al quantum dot, AlN Nano-pillar, Ga quantum dot, the barrier layer of the Quantum Well of active layer, which corresponds to V-arrangement hole position, has GaN nano-pillar, and V-arrangement cheats to form mostly week The Al quantum dot of phase, AlN nano-pillar, Ga quantum dot, GaN nano-pillar；
The width of the AlN nano-pillar remains unchanged, and the width of GaN nano-pillar becomes more with the period and becomes larger, to cheat with V-arrangement Form match and not with V-arrangement cheat contact of incline plane, form GaN nano-pillar, the AlN nano-pillar of combination of long drives and drop shots.
2. a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：Multiple quantum wells V-arrangement hole has more The Al quantum dot of the up-side down triangle in period, AlN nano-pillar, Ga quantum dot, GaN nano-pillar, nano-pillar match with V-arrangement hole, and Interface is not in contact with each other.
3. a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：The period of active layer multiple quantum wells Number, periodicity x >=3 identical as the Al quantum dot of multicycle, AlN nano-pillar, Ga quantum dot, the periodicity of GaN nano-pillar.
4. a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：Al quantum dot/AlN of each cycle Nano-pillar/Ga quantum dot thickness is identical with the well layer thickness of each cycle Quantum Well, with a thickness of 1.0~5.0nm；Each cycle The thickness of GaN nano-pillar and the barrier layer thickness of active layer are identical, with a thickness of 5.0~20.0nm.
5. a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：The Al quantum dot and Ga quantum The shape of point is one of spherical shape, hemispherical, pyramid, cone cell or a variety of.
6. a kind of production method of semiconductor light-emitting-diode as described in Claims 1 to 5 is any, which is characterized in that include Following steps：
(1) successively grown buffer layer, the first semiconductor layer of the first conductive type and having with V-arrangement hole multiple quantum wells on substrate Active layer forms the first template；
(2) location technology is cheated using V-arrangement, positioning V-arrangement hole records its coordinate value in the position of the first template；
(3) one layer of mask layer is deposited in the first template surface, cheats positioning etching technique using V-arrangement, it will according to the coordinate of step (2) The multiple quantum wells region of the mask layer etching of V-arrangement hole top, non-V-arrangement hole retains mask layer, forms the second template；
(4) the second template is put into reaction chamber, at 600-900 degrees Celsius of low temperature, is passed through TMAl depositing Al, time T1, Al In hypersaturated state, then, 900-1200 degrees Celsius of high temperature is risen to, NH is passed through3Carry out nitrogen treatment, time T2, growth Time T1/T2 >=2, to prevent Al from all nitrogenizing, the Al nitrogenized generates AlN nano-pillar, and the Al not nitrogenized generates Al amount Sub- point；Then, it is down to 600-900 degrees Celsius of low temperature, TMGa deposition Ga, time T3 is passed through, so that Ga is in hypersaturated state, so Afterwards, 900-1200 degrees Celsius of high temperature is risen to, NH is passed through3Nitrogen treatment is carried out, (x is by time T4, growth time T3/T4 >=2x Amount of cycles), prevent Ga from nitrogenizing completely, the Ga nitrogenized grows into GaN nano-pillar, and the Ga not nitrogenized generates Ga quantum dot, Meanwhile increase the width of GaN nano-pillar with the rising in period, form the GaN nano-pillar and Ga quantum dot of inverted V-shaped；
(5) step (4) are repeated according to the number of cycles of Quantum Well, grows Al quantum dot, AlN nano-pillar, the Ga quantum of multicycle Point, GaN nano-pillar cheat exact matching and the not contact of incline plane with V-arrangement hole with V-arrangement；
(6) nano-pillar filling V-arrangement hole multiple quantum wells above successively the second semiconductor layer of epitaxial growth the second conductive type and Contact layer is fabricated to the epitaxial wafer of semiconductor light-emitting-diode.
7. a kind of production method of semiconductor light-emitting-diode according to claim 6, it is characterised in that：The V-arrangement It cheats location technology and position is cheated using the V-arrangement that atomic force microscope tests the first template, record its coordinate；Or it is glimmering using cathode Light imaging technique cheats principle not luminous and that multiple quantum wells region is luminous using V-arrangement, and positioning V-arrangement cheats position, records its coordinate.
8. a kind of production method of semiconductor light-emitting-diode according to claim 6, it is characterised in that：The V-arrangement Hole positioning etching technique uses ICP dry etching, is accurately etched according to the coordinate position in V-arrangement hole to its top exposure mask.
9. a kind of production method of semiconductor light-emitting-diode according to claim 6, it is characterised in that：The exposure mask The mask material of layer is photoresist, SiO2, one of SiNx, PS ball.
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CN107785462B (en) * 2017-10-25 2019-07-05 黎明职业大学 A kind of nitride semiconductor LED and preparation method thereof
CN108598225B (en) * 2018-04-25 2019-11-15 黎明职业大学 A kind of nitride-based semiconductor white light emitting diode
CN108598227B (en) * 2018-04-25 2019-11-15 黎明职业大学 A kind of semiconductor white light emitting diode
CN109713077B (en) * 2018-12-01 2020-05-15 王星河 Semiconductor detector with multiple response wave bands
CN109817771B (en) * 2019-01-22 2021-10-01 江西兆驰半导体有限公司 High-reliability nitride light-emitting diode and preparation method thereof
CN109962117B (en) * 2019-04-10 2023-03-28 临沂市安福电子有限公司 Semiconductor detector with multiple response wave bands
CN109935667A (en) * 2019-04-10 2019-06-25 福建省南安市清信石材有限公司 A kind of semiconductor light-emitting elements
CN113257966B (en) * 2021-04-13 2022-05-31 深圳市思坦科技有限公司 LED chip structure, preparation method thereof and display module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420277A (en) * 2011-11-15 2012-04-18 南京大学 Method for preparing active layer structure with high-density gallium nitride quantum dots

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102205699B1 (en) * 2014-04-11 2021-01-21 삼성전자주식회사 Electronic device having quantum dot and method of manufacturing the same
CN104157759B (en) * 2014-08-20 2017-01-25 中国科学院半导体研究所 High density and high uniformity InGaN quantum dot structure and growth method thereof
CN105845794B (en) * 2016-06-02 2018-04-20 厦门市三安光电科技有限公司 A kind of iii-nitride light emitting devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420277A (en) * 2011-11-15 2012-04-18 南京大学 Method for preparing active layer structure with high-density gallium nitride quantum dots

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