CN106847954A - A kind of self-driven solar blind UV electric explorer face battle arrays of vertical stratification ZnMgO and preparation method thereof - Google Patents
A kind of self-driven solar blind UV electric explorer face battle arrays of vertical stratification ZnMgO and preparation method thereof Download PDFInfo
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- 229910003363 ZnMgO Inorganic materials 0.000 title claims abstract description 40
- 238000013517 stratification Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000003491 array Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 28
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 16
- 239000000395 magnesium oxide Substances 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 238000004549 pulsed laser deposition Methods 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000003384 imaging method Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 89
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000001259 photo etching Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The present invention discloses self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO and preparation method thereof, specifically refers to grow on a transparent substrate the doping Zn of one layer of ultra-wide band gap, high carrier concentrationxMg1‑xO films are used as electrically conducting transparent Window layer；One layer of regrowth day blind band gap, the doping Zn of low carrier concentrationyMg1‑yO films are used as n-layer；And then grow layer of NizMg1‑zO films are used as p-type layer；Etch away sections p-type layer and n-layer, exposed portion electrically conducting transparent Window layer；N-shaped annular common electrode is prepared in the electrically conducting transparent Window layer exposed, p-type array electrode is prepared in p-type layer；It is final to obtain the self-driven solar blind UV electric explorer face battle arrays of vertical stratification ZnMgO.The present invention utilizes ZnyMg1‑yO/NizMg1‑zO heterogenous pn junctions realize the self-driven detection of day blind UV signal；The photoelectric properties of device are greatly improved using the bright conducting window layer of ultra wide band effusion；Detector is vertical stratification, can realize the preparation of face battle array by preparing common electrode and array electrode, and be applied to the imaging and tracking of day blind UV signal.
Description
Technical field
The present invention relates to a kind of solar blind UV electric explorer face battle array and preparation method thereof, more particularly, to a kind of vertical junction
Self-driven solar blind UV electric explorer face battle arrays of structure ZnMgO and preparation method thereof.
Background technology
Atmosphere claims to the light that the sunshine of 200-280 nm ultraviolet bands has strong absorption, 200-280nm wave bands
It is solar blind UV.The detection that is absorbed as artificial day blind UV signal of the atmosphere to solar blind UV provides a kind of natural low
Backdrop window.Solar blind UV electric explorer refers to have characteristic response to the solar blind light of 200-280nm, and to 280-800nm
Ultraviolet light and the ultraviolet detector that is not responding to of visible ray（Rikiya Suzuki, Shinji Nakagomi, and
Yoshihiro Kokubuna, Appllied Physics Letters, 2011, 98:131114）.At present, day is blind ultraviolet
Detector has been widely used in the fields such as missile warning, high-voltage line corona detection, medical diagnosis, near-earth secure communication.
In recent years, ZnMgO alloy firms are widely used in various types of solar blind UV transmission photodetector unit devices
Preparation, including metal-semiconductor-metal solar blind UV electric explorer（Z. G. Ju, C. X. Shan, D. Y.
Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen and X. W. Fan, Applied
Physics Letters, 2008, 93:173505）With Schottky diode structure solar blind UV electric explorer（H.
Endo, M. Sugibuchi, K. Takahashi, S. Goto, K. Hane and Y. Kashiwaba, physica
status solidi (c), 2008, 5:3119）.However, the detector of both structures, due to the problem of electrode connection,
It is not suitable for the preparation of face battle array device, the report of the ZnMgO solar blind ultraviolet detectors face battle array device of current few both structures
Road.
P-n junction diode feature detector has vertical stratification and self-driven characteristic.On the one hand, vertical stratification is applied to
Integrated photodetector array, this is necessary photoelectric imaging technology；On the other hand, self-driven performance photodiode can be with
Driven without external power source, with good adaptability and sustainability（Hongyu Chen, Kewei Liu, Linfeng
Hu, Ahmed A. Al-Ghamdi and Xiaosheng Fang, Materials Today, 2015, 18:493）.Cause
This is expected to prepare high performance solar blind UV electric explorer face battle array device.However, how to prepare the p-type zno-based material of stabilization
Material is still a larger problem（J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang,
L. Liu, L. G. Zhang, and D. Z. Shen, Applied Physics Letters, 2012, 101:
011106）.
The NiMgO ternary alloy films of undoped, due to the presence in Ni rooms, show p-type electric-conducting characteristic（Yanmin
Guo, Liping Zhua, Jie Jiang, Yaguang Li, Liang Hu, Hongbin Xu, Zhizhen Ye,
Thin Solid Films, 2014, 558:311）.Therefore, researcher prepares n-Zn in the recent period0.8Mg0.2O/p-
Ni0.8Mg0.2O heterogenous pn junctions（Yan-Min Guo,Li-Ping Zhu, Wen-Zhe Niu, Xiang-Yu Zhang and
Zhi-Zhen Ye, Applied physics A, 2014, 118:239）.By properly increasing ZnyMg1-yO and NizMg1-zO
Mg components in alloy firm（1-y）With（1-z）, the band gap width of this double-layer films can be increased, make their energy gap
Reach non-solar-blind band, it is possible to prepare the solar blind UV electric explorer of the heterogeneous pn vertical stratifications of n-ZnMgO/p-NiMgO.
Additionally, it is also well known that increase of the ZnMgO ternary alloy films with Mg components, its carrier concentration rapid decrease,
Therefore its electric conductivity reduction（J.S. Liu, C.X.Shan, S.P.Wang, B.H.Li, Z.Z Zhang and
D.Z.Shen, Journal of Crystal Growth, 2012, 347:95）.By adding ultra-wide band gap, high carrier
The doping Zn of concentrationxMg1-xO films can effectively improve the collection efficiency of photo-generated carrier as electrically conducting transparent Window layer, significantly
The performance of enhancing face battle array device.
Therefore, using n-ZnyMg1-yO/p-NizMg1-zThe self-powered dynamic characteristic of O heterogenous pn junctions, with reference to ultra-wide band gap, current-carrying high
The doping Zn of sub- concentrationxMg1-xO films can prepare the vertical stratification ZnMgO of excellent performance as electrically conducting transparent Window layer
Self-driven solar blind UV electric explorer face battle array device.
The content of the invention
Low it is an object of the invention to be directed to p-type ZnMgO stability of material, pn-junction type ZnMgO solar blind UVs electrical resistivity survey is surveyed
Device prepares difficult problem, replaces p-type ZnMgO materials using p-type NiMgO materials, there is provided a kind of vertical stratification ZnMgO is self-driven
Solar blind UV electric explorer face battle array and preparation method thereof.
The technical scheme is that with ultra-wide band gap, the doping Zn of high carrier concentrationxMg1-xO films are led as transparent
Electric Window layer；With day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as n-layer；With NizMg1-zO film conducts
P-type layer；N-shaped annular common electrode and p-type array electrode are prepared, vertical stratification ZnMgO self-driven days is finally prepared blind ultraviolet
Photodetector face battle array.
The present invention is comprised the following steps：
1）One layer of ultra-wide band gap, doping Zn of high carrier concentration are grown in transparent substrates 1xMg1-xO films, lead as transparent
Electric Window layer 2；2）On electrically conducting transparent Window layer 2 grow one layer day blind band gap, the doping Zn of low carrier concentrationyMg1-yO
Film, as n-layer 3；3）Layer of Ni is grown on n-layer 3zMg1-zO films, as p-type layer 4；4）Using mask
After the p-type layer 4 and n-layer 3 of the method etch away sections of etching, exposed portion electrically conducting transparent Window layer 2；5）In conjunction with light
Mask and vacuum coating method are carved in step 4）N-shaped annular common electrode 5 is prepared in the electrically conducting transparent Window layer 2 exposed, in p-type
P-type array electrode 6 is prepared on layer 4；It is final to prepare the self-driven solar blind UV electric explorer face battle arrays of vertical stratification ZnMgO.
Above-mentioned steps 1）Transparent substrates 1 be magnesia, aluminum oxide or quartz substrate.
Above-mentioned steps 1）The ultra-wide band gap of growth, the doping Zn of high carrier concentrationxMg1-xO films, the impurity of its doping
Element is Al, Ga or In, and band gap is more than 5.0eV, and carrier concentration is more than 1 × 1019/cm3；Growth doping ZnxMg1-xO films
Method is magnetron sputtering coating method or pulsed laser deposition film plating process；The doping ZnxMg1-xZn elemental constituents in O films
X is less than 0.50 more than 0.
Above-mentioned steps 2）Growth day blind band gap, the doping Zn of low stream concentrationyMg1-yO films, the impurity unit of its doping
Element is Al, Ga or In, and band gap is less than 5.0eV more than 4.3eV, and carrier concentration is more than 1 × 1017/cm3Less than 5 × 1018/cm3；
Growth doping ZnyMg1-yThe method of O films is magnetron sputtering coating method or pulsed laser deposition film plating process；The doping
ZnyMg1-yZn elemental constituents y is less than 0.60 more than 0.50 in O films.
Above-mentioned steps 3）The Ni of growthzMg1-zO films, its band gap is less than 5.0eV more than 4.3eV；Growth NizMg1-zO films
Method be magnetron sputtering coating method or pulsed laser deposition film plating process；The NizMg1-zNi elemental constituents z in O films
0.50 is less than more than 0.40.
Above-mentioned steps 4）The doping Ni of etch away sectionszMg1-zThe doping Zn of O films and low carrier concentrationyMg1-yO films
Lithographic method be chemical attack, ion beam etching or plasma etching.
Above-mentioned steps 5）In vacuum coating method for magnetron sputtering coating method, electron beam evaporation deposition method or heat steam
Hair film plating process.
The above-mentioned preparation method of the present invention is obtained the self-driven solar blind UV electric explorer face battle arrays of vertical stratification ZnMgO.
Compared with existing ZnMgO solar blind UVs electric explorer, the present invention has the advantages that following prominent：
1）The present invention replaces p-type ZnMgO materials using p-type NiMgO materials, and the p-type ZnMgO materials preparation for solving stabilization is difficult
Problem, prepare ZnyMg1-yO/NizMg1-zO heterojunction structure pn-junctions, realize that the self-powered of ZnMgO solar blind UV electric explorers is started building
Make.
2）Zn prepared by the present inventionyMg1-yO/NizMg1-zO heterojunction structures pn-junction be vertical stratification, better than traditional metal-
The two-dimension plane structure of SEMICONDUCTOR-METAL, the solar blind UV electric explorer of vertical stratification can realize common electrode and array electrode
Preparation, therefore can prepare ZnMgO solar blind UV electric explorers face battle array device.
3）The present invention is using ultra-wide band gap, the doping Zn of high carrier concentrationxMg1-xO thin-film transparents are used as conductive window
Layer, can effectively improve the collection efficiency of photo-generated carrier, greatly enhance solar blind UV transmission photodetector unit and face battle array device
Performance.
4）Existing ZnMgO solar blind UVs transmission photodetector unit device, can be only applied to solar blind UV electric signal strong
Weak detection, and the imaging of solar blind UV electric signal cannot be realized, followed the trail of.ZnMgO solar blind UVs electricity prepared by the present invention
Detector array device can realize the imaging and tracking to solar blind UV electric signal.
Brief description of the drawings
Fig. 1 is the self-driven solar blind UV electric explorer face battle array schematic diagrames of vertical stratification ZnMgO.
In figure marked as：Transparent substrates 1；The doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xO films are used as saturating
Bright conducting window layer 2；Day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as n-layer 3；NizMg1-zO films are made
It is p-type layer 4；N-shaped annular common electrode 5；P-type array electrode 6.
Fig. 2 prepares the vertical stratification ZnMgO specific mistakes of self-driven solar blind UV electric explorer face battle array for the embodiment of the present invention
Cheng Tu.
In figure marked as：Transparent substrates 1；The doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xO films are used as saturating
Bright conducting window layer 2；Day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as n-layer 3； NizMg1-zO films
As p-type layer 4；N-shaped annular common electrode 5；P-type array electrode 6.
Specific embodiment
Illustrated below by specific embodiment, with the substantive distinguishing features that the present invention is furture elucidated and marked improvement.
Embodiment 1
Referring to accompanying drawing 2, one layer of ultra-wide band gap, high carrier concentration are grown in quartz substrate 1 using magnetron sputtering coating method
Doping ZnxMg1-xUsed as electrically conducting transparent Window layer 2, the impurity element of doping is Al to O films, using ZnO target, MgO targets and
Al2O3Target is respectively Zn sources, Mg sources and Al doped sources, and sputtering power is respectively 50W, 100W and 30W, the Zn that growth is obtainedxMg1- xO films are obtained as electrically conducting transparent Window layer 2 through experiment：X values are 0.48 in formula, and band gap width is 5.1eV, carrier concentration
It is 2 × 1019/cm3（The process a seen in Fig. 2）；Continue with magnetron sputtering coating method grow one layer day blind band gap, low current-carrying
The doping Zn of sub- concentrationyMg1-yUsed as n-layer 3, the impurity element of doping is Al to O films, using ZnO target, MgO targets and Al2O3Target
Respectively Zn sources, Mg sources and Al doped sources, sputtering power are respectively 55W, 100W and 20W, the Zn that growth is obtainedyMg1-yO films n
Type layer 3, obtains through experiment：Y values are 0.52 in formula, and its band gap width is 4.6eV, and carrier concentration is 3 × 1017/cm3（See Fig. 2
In process b）；And then grow layer of Ni using magnetron sputtering coating methodzMg1-zO films as p-type layer 4, using NiO targets and
MgO targets are respectively Ni sources and Mg sources, and sputtering power is respectively 100W and 110W, the Ni that growth is obtainedzMg1-zO films, through experiment
Obtain：Z values are 0.45 in formula, and its band gap width is 4.5eV（The process c seen in Fig. 2）；The spin coating photoetching on the multilayer film of growth
Glue, and using the photoresist of etched portions is needed on photoetching development technology removal multilayer film, etched away using chemical corrosion method
The doping Ni of non-lithographic glue Mask portionzMg1-zThe doping Zn of O films and low carrier concentrationyMg1-yThe n-layer 3 of O films, dew
The doping Zn of excess of export broad-band gap, high carrier concentrationxMg1-xThe electrically conducting transparent Window layer 2 of O films, residual photoetching is removed with acetone
Glue（The process d seen in Fig. 2）；Further spin coating photoresist on multilayer film after etching, and utilization photoetching development technology is revealing
The doping Zn of excess of export broad-band gap, high carrier concentrationxMg1-xAnnular common electrode is prepared in the electrically conducting transparent Window layer 2 of O films
Litho pattern, N-shaped annular common electrode 5 is prepared using electron beam evaporation deposition method, and residual photoresist is removed with acetone（See Fig. 2
In process e）；The further spin coating photoresist on the multilayer film for having prepared N-shaped annular common electrode, and utilization photoetching development technology
In NizMg1-zThe litho pattern of array electrode is prepared in the p-type layer 4 of O films, p-type is prepared using electron beam evaporation deposition method
Array electrode 6, residual photoresist is removed with acetone（The process f seen in Fig. 2）.It is final to obtain vertical stratification ZnMgO self-driven days
Blind UV electric explorer face battle array device is as shown in figure 1, in Fig. 1：Transparent substrates 1；The doping of ultra-wide band gap, high carrier concentration
ZnxMg1-xO films are used as electrically conducting transparent Window layer 2；Day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as N-shaped
Layer 3；NizMg1-zO films are used as p-type layer 4；N-shaped annular common electrode 5；P-type array electrode 6.
Embodiment 2
Referring to accompanying drawing 2, one layer of ultra-wide band gap, current-carrying high are grown in alumina substrate 1 using pulsed laser deposition film plating process
The doping Zn of sub- concentrationxMg1-xUsed as electrically conducting transparent Window layer 2, the impurity element of doping is In to O films, using ZnO target, MgO
Target and In2O3Target is respectively Zn sources, Mg sources and In doped sources, and the energy density of pulsed laser source is respectively 1.7 J/cm2、2.0J/
cm2And 0.7J/cm2, the Zn that growth is obtainedxMg1-xO films are obtained as electrically conducting transparent Window layer 2 through experiment：X values are in formula
0.45, its band gap width is 5.3eV, and carrier concentration is 1.5 × 1019/cm3（The process a seen in Fig. 2）；Continue with pulse
Laser deposition film plating process grow one layer day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are mixed as n-layer 3
Miscellaneous impurity element is In, using ZnO target, MgO targets and In2O3Target is respectively Zn sources, Mg sources and In doped sources, pulsed laser source
Energy density be respectively 1.9J/cm2、2.0J/cm2And 0.5J/cm2, the Zn that growth is obtainedyMg1-yO films, obtain through experiment：
Y values are 0.53 in formula, and its band gap width is 4.5eV, and carrier concentration is 5 × 1017/cm3（The process b seen in Fig. 2）；And then profit
Layer of Ni is grown with pulsed laser deposition film plating processzMg1-zO films are respectively Ni as p-type layer 4 using NiO targets and MgO targets
Source and Mg sources, the energy density of pulsed laser source are respectively 1.8J/cm2、2.0J/cm2, the Ni that growth is obtainedzMg1-zO films, warp
Experiment is obtained：Z values are 0.47 in formula, and its band gap width is 4.4eV（The process c seen in Fig. 2）；The spin coating on the multilayer film of growth
Photoresist, and using the photoresist of etched portions is needed on photoetching development technology removal multilayer film, using ion beam etching method
Etch away the Ni of non-lithographic glue Mask portionzMg1-zThe p-type layer 4 of O films and the doping Zn of low carrier concentrationyMg1-yO films
N-layer 3, exposes the doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xThe electrically conducting transparent Window layer 2 of O films, is gone with acetone
Except residual photoresist（The process d seen in Fig. 2）；The photoetching of further spin coating photoresist on multilayer film after etching, and utilization shows
Shadow technology is exposing the doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xRing is prepared on the conducting window layer 2 of O thin-film transparents
The litho pattern of shape common electrode, N-shaped annular common electrode 5 is prepared using magnetron sputtering coating method, and residual photoetching is removed with acetone
Glue（The process e seen in Fig. 2）；Further the spin coating photoresist on the multilayer film for having prepared N-shaped annular common electrode, and utilizes photoetching
Developing technique is in NizMg1-zThe litho pattern of array electrode is prepared in the p-type layer 4 of O films, using magnetron sputtering coating method system
Standby p-type array electrode 6, residual photoresist is removed with acetone（The process f seen in Fig. 2）.It is final to obtain vertical stratification ZnMgO self-powereds
Dynamic solar blind UV electric explorer face battle array device.It is final to obtain the self-driven solar blind UV electric explorer faces of vertical stratification ZnMgO
Battle array device is as shown in figure 1, in Fig. 1：Transparent substrates 1；The doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xO films are used as saturating
Bright conducting window layer 2；Day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as n-layer 3；NizMg1-zO films are made
It is p-type layer 4；N-shaped annular common electrode 5；P-type array electrode 6.
Embodiment 3
Referring to accompanying drawing 2, one layer of ultra-wide band gap, high carrier are grown in alumina substrate 1 using magnetron sputtering coating method dense
The doping Zn of degreexMg1-xUsed as electrically conducting transparent Window layer 2, the impurity element of doping is Ga to O films, using ZnO target, MgO targets and
Ga2O3Target is respectively Zn sources, Mg sources and Ga doped sources, and sputtering power is respectively 45W, 100W and 30W, the Zn that growth is obtainedxMg1- xO films are obtained as electrically conducting transparent Window layer 2 through experiment：X values are 0.44 in formula, and its band gap width is 5.4eV, and carrier is dense
Spend is 1.1 × 1019/cm3（The process a seen in Fig. 2）；Continue with magnetron sputtering coating method grow one layer day blind band gap, low
The doping Zn of carrier concentrationyMg1-yUsed as n-layer 3, the impurity element of doping is Ga to O films, using ZnO target, MgO targets and
Ga2O3Target is respectively Zn sources, Mg sources and Al doped sources, and sputtering power is respectively 52W, 100W and 20W, the Zn that growth is obtainedyMg1- yO films n-layer 3, obtains through experiment：Y values are 0.51 in formula, and its band gap width is 4.7 eV, and carrier concentration is 1 × 1018/
cm3（The process b seen in Fig. 2）；And then grow layer of Ni using magnetron sputtering coating methodzMg1-zO films are adopted as p-type layer 4
Ni sources and Mg sources are respectively with NiO targets and MgO targets, sputtering power is respectively 100W and 120W, the Ni that growth is obtainedzMg1-zO is thin
Film, obtains through experiment：Z values are 0.43 in formula, and its band gap width is 4.7eV（The process c seen in Fig. 2）；In the multilayer film of growth
Upper spin coating photoresist, and using the photoresist of etched portions is needed on photoetching development technology removal multilayer film, using plasma
Lithographic method etches away the Ni of non-lithographic glue Mask portionzMg1-zThe doping of the p-type layer 4 and low carrier concentration of O films
ZnyMg1-yThe n-layer 3 of O films, exposes the doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xThe electrically conducting transparent window of O films
Layer 2, residual photoresist is removed with acetone（The process d seen in Fig. 2）；Further spin coating photoresist on multilayer film after etching,
And exposing the doping Zn of ultra-wide band gap, high carrier concentration using photoetching development technologyxMg1-xThe electrically conducting transparent window of O films
The litho pattern of annular common electrode is prepared on layer 2, N-shaped annular common electrode 5 is prepared using thermal evaporation film plating process, removed with acetone
Residual photoresist（The process e seen in Fig. 2）；Further prepared N-shaped annular common electrode multilayer film on spin coating photoresist, and
Using photoetching development technology in NizMg1-zThe litho pattern of array electrode is prepared in O films p-type layer 4, using thermal evaporation plated film side
Method prepares p-type array electrode 6, and residual photoresist is removed with acetone（The process f seen in Fig. 2）.It is final to obtain vertical stratification ZnMgO
Self-driven solar blind UV electric explorer face battle array device.The final self-driven solar blind UV electrical resistivity surveys of vertical stratification ZnMgO that obtain are surveyed
Device face battle array device is as shown in figure 1, in Fig. 1：Transparent substrates 1；The doping Zn of ultra-wide band gap, high carrier concentrationxMg1-xO films are made
It is electrically conducting transparent Window layer 2；Day blind band gap, the doping Zn of low carrier concentrationyMg1-yO films are used as n-layer 3；NizMg1-zO is thin
Film is used as p-type layer 4；N-shaped annular common electrode 5；P-type array electrode 6.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with
Modification, should all belong to covering scope of the invention.
Claims (8)
1. the preparation method of a kind of vertical stratification ZnMgO self-driven solar blind UV electric explorer faces battle array, it is characterised in that including
Following steps：1）One layer of ultra-wide band gap, doping Zn of high carrier concentration are grown in transparent substrates 1xMg1-xO films, as
Electrically conducting transparent Window layer 2；2）On electrically conducting transparent Window layer 2 grow one layer day blind band gap, the doping of low carrier concentration
ZnyMg1-yO films, as n-layer 3；3）Layer of Ni is grown on n-layer 3zMg1-zO films, as p-type layer 4；4）Using light
Carve mask combine etching method etch away sections p-type layer 4 and n-layer 3 after, exposed portion electrically conducting transparent Window layer 2；5）Again
With reference to mask and vacuum coating method in step 4）N-shaped annular common electrode is prepared in the electrically conducting transparent Window layer 2 exposed
5, p-type array electrode 6 is prepared in p-type layer 4；The final self-driven solar blind UV electrical resistivity surveys of vertical stratification ZnMgO that prepare are surveyed
Device face battle array.
2. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 1）Transparent substrates 1 be magnesia, aluminum oxide or quartz substrate.
3. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 1）The ultra-wide band gap of growth, the doping Zn of high carrier concentrationxMg1-xO films, the impurity of its doping
Element is Al, Ga or In, and band gap is more than 5.0eV, and carrier concentration is more than 1 × 1019/cm3；Growth doping ZnxMg1-xO films
Method is magnetron sputtering coating method or pulsed laser deposition film plating process；The doping ZnxMg1-xZn elemental constituents in O films
X is less than 0.50 more than 0.
4. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 2）Growth day blind band gap, the doping Zn of low stream concentrationyMg1-yO films, the impurity unit of its doping
Element is Al, Ga or In, and band gap is less than 5.0eV more than 4.3eV, and carrier concentration is more than 1 × 1017/cm3Less than 5 × 1018/cm3；
Growth doping ZnyMg1-yThe method of O films is magnetron sputtering coating method or pulsed laser deposition film plating process；The doping
ZnyMg1-yZn elemental constituents y is less than 0.60 more than 0.50 in O films.
5. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 3）The Ni of growthzMg1-zO films, its band gap is less than 5.0eV more than 4.3eV；Growth NizMg1-zO is thin
The method of film is magnetron sputtering coating method or pulsed laser deposition film plating process；The NizMg1-zNi elemental constituents in O films
Z is less than 0.50 more than 0.40.
6. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 4）The doping Ni of etch away sectionszMg1-zThe doping Zn of O films and low carrier concentrationyMg1-yO is thin
The lithographic method of film is chemical attack, ion beam etching or plasma etching.
7. the preparation side of the self-driven solar blind UV electric explorer face battle arrays of a kind of vertical stratification ZnMgO as claimed in claim 1
Method, it is characterised in that step 5）In vacuum coating method be magnetron sputtering coating method, electron beam evaporation deposition method or heat
Evaporation coating method.
8. the self-driven solar blind UV electrical resistivity surveys of vertical stratification ZnMgO obtained in any described preparation methods of claim 1-7 are surveyed
Device face battle array.
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| CN113088907A (en) * | 2021-03-26 | 2021-07-09 | 哈尔滨工业大学 | Preparation method of MgGaZnO film with deep ultraviolet detection function |
| CN114784134A (en) * | 2022-03-07 | 2022-07-22 | 山东大学 | Self-driven solar blind photoelectric detector based on p-type cuprous indium oxide single crystal film and preparation method thereof |
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