CN106847199B - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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CN106847199B
CN106847199B CN201611036229.6A CN201611036229A CN106847199B CN 106847199 B CN106847199 B CN 106847199B CN 201611036229 A CN201611036229 A CN 201611036229A CN 106847199 B CN106847199 B CN 106847199B
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compensation capacitor
display area
display panel
signal wire
data line
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CN106847199A (zh
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申炳昱
沈载昊
石政烨
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LG Display Co Ltd
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LG Display Co Ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/10Intensity circuits
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • G09G2320/0209Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
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Abstract

提供了一种显示装置及其制造方法。显示装置包括显示区域、非显示区域、信号线和补偿电容器。显示区域和非显示区域界定在基板上。信号线位于显示区域内,并且信号线的布线长度根据位置而不同。补偿电容器连接至信号线中的至少一条信号线。

Description

显示装置及其制造方法
本申请要求享有于2015年11月26日提交的韩国专利申请第10-2015-0166483号的优先权,在此为了所有目的通过引用将该申请并入本申请,如同在此被完全阐述一样。
技术领域
本公开内容涉及一种显示装置及其制造方法。
背景技术
随着信息技术的发展,在使用者与信息之间起媒介作用的显示器的市场正在增长。因此,诸如有机发光显示器(OLED)、量子点显示器(QDD)、液晶显示器(LCD)和等离子体显示面板(PDP)之类的显示装置正越来越多地被使用。
上述显示装置均包括:包含多个子像素的显示面板、输出驱动信号以驱动显示面板的驱动部、产生并向驱动部提供电力的电源。
显示装置可形成为小尺寸、中尺寸或大尺寸。显示面板、连接至显示面板的驱动装置(包括外围设备)、以及用于容纳显示面板和驱动装置的结构的构造可根据显示装置的期望尺寸、形状、应用等而不同。
显示装置的用途和使用环境正变得更加多样化。为了应对此情况,用于显示图像的显示面板正从传统的正方形或矩形多样化为圆形以及曲线形状。
由具有圆形形状、椭圆形状等的显示面板组成的不规则形状的显示装置提供了诸如更佳的设计自由度之类的一些优点。然而,所提出的常规的不规则形状的显示装置由于显示面板的信号线之间不可避免地存在的寄生元素(例如,寄生电容)的变化而具有亮度不均匀,即信号线之间的亮度不同的问题。因此,需要解决此问题的方案。
发明内容
本公开内容提供了一种显示装置,包括显示区域、非显示区域、信号线和补偿电容器。所述显示区域和所述非显示区域界定在基板上。所述信号线位于所述显示区域内,并且所述信号线的布线长度根据位置而不同。所述补偿电容器连接至所述信号线中的至少一条信号线。
在另一方面中,本公开内容提供了一种显示装置的制造方法。所述显示装置的制造方法包括:在基板上界定出显示区域和非显示区域;在所述显示区域内布置信号线,所述信号线的布线长度根据位置而不同;和以将每个补偿电容器连接至所述信号线中的至少一条信号线的方式形成补偿电容器。
附图说明
被包括用来给本发明提供进一步理解并结合在本说明书中组成本说明书一部分的附图图解了本发明的实施方式,并与说明书一起用于解释本发明的原理。在附图中:
图1是示意地示出根据本公开内容示例性实施方式的显示装置的框图;
图2是示意地示出图1的子像素的构造的示图;
图3是示意地示出根据本公开内容示例性实施方式的用于智能手表的显示装置的框图;
图4是示意地示出用于图3的智能手表的显示面板的俯视平面图;
图5(a)和图5(b)是用于解释在矩形显示面板和圆形显示面板中亮度不均匀的原因的示图;
图6(a)和图6(b)是用于解释试验例的问题的示图;
图7(a)和图7(b)是用于解释根据本公开内容示例性实施方式的补偿构思的示图;
图8是用于解释根据本公开内容示例性实施方式的补偿电容器的设计方案的示图;
图9图解了补偿电容器的放置方式的第一示例;
图10图解了补偿电容器的放置方式的第二示例;
图11图解了补偿电容器的放置方式的第三示例;
图12是示出布置了补偿电容器的非显示区域的示图;
图13是试验例和示例性实施方式的圆形显示面板中使用的子像素的电路构造的示图;
图14是图13的圆形显示面板的驱动波形图。
具体实施方式
现在将详细参考附图中所示的实施方式,附图中图解了这些实施方式的一些例子。
下面将参照附图描述本发明的具体实施方式。
图1是示意地示出根据本公开内容示例性实施方式的显示装置的框图。图2是示意地示出图1的子像素的构造的示图。
如图1中所示,显示装置主要包括主机系统1000、时序控制器170、数据驱动器130、电源140、栅极驱动器150和显示面板110。
主机系统1000包括内置有缩放器的系统芯片(system-on-chip,SoC),主机系统1000将输入图像的数字视频数据转换成适于在显示面板110上显示的格式的数据信号。主机系统1000将各种时序信号连同数据信号一起输送到时序控制器170。
时序控制器170基于从主机系统1000接收的诸如垂直同步信号、水平同步信号、数据使能信号和主时钟之类的时序信号控制数据驱动器130和栅极驱动器150的操作时序。时序控制器170执行对从主机系统1000接收的数据信号的图像处理(诸如数据补偿等)并将其提供到数据驱动器130。
数据驱动器130响应于从时序控制器170输出的第一驱动信号DDC等进行操作。数据驱动器130将从时序控制器170接收的数字数据信号DATA转换成模拟数据信号并输出该模拟数据信号。
数据驱动器130响应于设置在内部或外部的伽马部(未示出)的伽马电压将数字数据信号DATA转换成模拟数据信号。数据驱动器130将数据信号提供到显示面板110的数据线DL1至DLn。
栅极驱动器150响应于从时序控制器170输出的第二驱动信号GDC等进行操作。栅极驱动器150响应于第二驱动信号GDC等以栅极高电压或栅极低电压输出栅极信号(或扫描信号)。
栅极驱动器150可沿向前或向后的方向按顺序输出栅极信号。栅极驱动器150将栅极信号提供到显示面板110的栅极线GL1至GLm。
电源140产生用于驱动显示面板110的第一和第二电源电压EVDD和EVSS、以及用于驱动数据驱动器130的第三和第四电源电压VCC和GND。此外,电源140产生驱动显示装置所需的电压,诸如被输送到栅极驱动器150的栅极高电压、栅极低电压等。
显示面板110包括子像素SP、连接到子像素SP的数据线DL1至DLn、以及连接到子像素SP的栅极线GL1至GLm。显示面板110响应于从栅极驱动器150输出的栅极信号和从数据驱动器130输出的数据信号DATA显示图像。显示面板110包括下基板和上基板,子像素SP形成在下基板与上基板之间。
如图2中所示,一个子像素包括连接到栅极线GL1和数据线DL1(或形成在栅极线GL1与数据线DL1的交叉部分处)的晶体管T1、以及响应于通过晶体管T1提供的数据信号DATA而操作的像素电路PC。
根据子像素SP的像素电路PC的构造,显示面板110由液晶显示面板或有机发光显示面板实现。若显示面板110由液晶显示面板实现,则显示面板110以TN(扭曲向列)模式、VA(垂直取向)模式、IPS(共面切换)模式、FFS(边缘场切换)模式、或ECB(电控双折射)模式进行操作。
若显示面板110由有机发光显示面板实现,则显示面板110作为顶部发光型、底部发光型或双侧发光型进行操作。
上述显示装置可实施用于电视系统、机顶盒、导航系统、视频播放器、蓝光播放器、个人电脑(PC)、可穿戴装置、家庭影院系统、移动电话等。
显示装置的显示面板可以是液晶显示面板、有机发光显示面板、电泳显示面板、量子点显示面板、等离子体显示面板等。为了便于描述,作为显示面板的示例,以下将描述具有有机发光显示面板的显示装置。
以下将描述的显示装置可形成为小尺寸、中尺寸或大尺寸。作为示例,以下将描述小型显示器,与中型或大型显示器相比,小型显示器能带来显著的功耗节省。
作为示例,将描述根据本公开内容的示例性实施方式的智能手表,智能手表属于一种小型显示器。此外,将在以下描述中给出其中一个像素由红色子像素R、绿色子像素G和蓝色子像素B组成的示例。然而,应注意这只是举例说明,而本公开内容并不限于此。
图3是示意地示出用于根据本公开内容示例性实施方式的智能手表的显示装置的框图。图4是示意地示出用于图3的智能手表的显示面板的俯视平面图。
如图3中所示,智能手表100包括主机系统(HS)1000、时序控制器(TCON)170、数据驱动器(DIC)130、电源(PIC)140、栅极驱动器150、显示面板(PNL)110和触摸驱动器(TIC)190。
智能手表100对应于小型显示器。在小型显示装置中,装置的一些部分被集成,以减小装置的复杂性。例如,电源140可包括在数据驱动器130中。然而,这只是举例说明,小型显示器可以以各种构造实现,包括将时序控制器170和数据驱动器130集成到单个单元中。
栅极驱动器150与像素阵列一起内嵌于显示面板110中。内嵌于显示面板110中的栅极驱动器150与薄膜晶体管工艺一起通过GIP(面板内栅极)技术形成。
智能手表100具有触摸驱动器190,触摸驱动器190作为触摸型输入手段帮助使用者输入数据。此外,显示面板110包括触摸传感器和传感器线,触摸传感器使用触摸驱动器190感测触摸位置并输出感测位置的值,传感器线将触摸传感器和触摸驱动器190电连接。
触摸驱动器190使用自电容触摸传感器或互电容触摸传感器检测关于手指触摸位置的信息。触摸驱动器190将检测的关于手指触摸位置的信息输送到主机系统1000。主机系统1000执行与从触摸驱动器190接收的触摸位置信息相关的应用程序。
如图4中所示,显示面板110例如可形成为圆形。除圆形之外,显示面板110还可形成为包括正方形、矩形、多边形、椭圆形等在内的各种形状。
红色子像素R、绿色子像素G和蓝色子像素B以及触摸传感器(未图示)置于显示面板110的显示区域AA中。焊盘部111a可置于显示面板110的非显示区域(或边框区)NA中界定的焊盘区域PA中。作为示例,焊盘部111a仅置于显示区域AA的顶部上,但也可以置于显示区域AA的下方。
具有电源的数据驱动器130安装在柔性电路板(膜)180上。柔性电路板180通过各向异性导电膜(ACF)等电连接到焊盘部111a。除数据驱动器130之外,驱动显示面板110所需的其他装置也可安装于柔性电路板180上。
如上所述,随着显示装置的用途和使用环境变得更加多样化,用于显示图像的显示面板正从传统的正方形或矩形多样化为圆形以及曲线形状。
由具有圆形形状、椭圆形状等而非正方形或矩形形状的显示面板组成的不规则形状的显示装置提供了诸如更佳的设计自由度之类的一些优点。然而,所提出的常规的不规则形状的显示装置由于显示面板的信号线之间不可避免地存在的寄生元素(例如,寄生电容)的变化而具有亮度不均匀,即信号线之间的亮度不同的问题。因此,需要解决此问题的方案。
现在,将基于矩形显示面板和圆形显示面板描述由寄生元素导致亮度不均匀的原因以及本公开内容将如何解决此问题。
图5是用于解释在矩形显示面板和圆形显示面板中亮度不均匀的原因的示图。图6是用于解释试验例的问题的示图。图7是用于解释根据本公开内容示例性实施方式的补偿构思的示图。图8是用于解释根据本公开内容示例性实施方式的补偿电容器的设计方案的示图。
在图5的(a)中所示的矩形显示面板110中,位于显示区域AA内的数据线以长度相等的方式布置。例如,位于显示区域AA内左侧第一行中的第一数据线DL1和位于显示区域AA内中心处第i行中的第i数据线DLi长度相等。这是因为数据线布线路程在显示区域AA内保持相同。
相比之下,位于数据驱动器130与显示区域AA之间的连线区域内的数据线以其中至少一条数据线具有不同长度的方式布置。例如,第一数据线DL1在数据驱动器130与显示区域AA之间的连线区域内布置成斜线,而位于数据驱动器130与显示区域AA之间的第i数据线DLi布置成直线,因此可给连线区域增加偏差补偿图案PTN。
这是因为在连线区域内数据线布线路程每M条线(M是大于或等于1的整数)而变化。这意味着数据线的长度和连接至数据线的像素的数量每M条线而变化。
在图5的(b)中所示的圆形显示面板110中,位于显示区域AA内的数据线以数据线的长度全都不同的方式布置。此外,位于数据驱动器130与显示区域AA之间的连线区域内的数据线以其中至少一条数据线具有不同长度的方式布置。
从结构上讲,与圆形显示面板相比,矩形显示面板可具有像非显示区域NA这样的更多额外的空间。因此,为了克服由于信号线之间的寄生元素(例如,寄生电容)的变化而导致的亮度不均匀,即信号线之间的亮度不同的问题,可很容易给数据驱动器130与显示区域AA之间的连线区域增加偏差补偿图案PTN。在具有偏差补偿图案PTN的情况下,通过调整数据线的长度以匹配数据信号的时间常数(t=R×C)来保持电阻相同。
相比之下,从结构上讲,与矩形显示面板相比,圆形显示面板很难具有像非显示区域NA这样的更多额外空间。此外,试验结果显示出给连线区域增加偏差补偿图案PTN以保持数据线之间的电阻相同不足以解决亮度不均匀的问题。
图6示出了通过试验例的方法制造的圆形显示面板(上部图)以及数据线之间的寄生电容的测量结果(下部图)。在试验例的圆形显示面板中,位于显示区域AA内的数据线具有不同的长度。
如图中所示,位于显示区域AA的中心处的第i数据线DLi在数据线之中具有最长的布线长度,而位于显示区域AA的右边缘上的第n数据线DLn在数据线之中具有最短的布线长度。
将试验电压施加到试验例的圆形显示面板并测量第i数据线DLi和第n数据线DLn的电容值的结果显示出,第i数据线DLi与第n数据线DLn之间存在约13至15pF的偏差。
此外,发现在提供数据电压到试验例的圆形显示面板之后,第i数据线DLi以约0.03V的电压充电,第n数据线DLn以约0.4V的电压充电。
结果,当在试验例的圆形显示面板上显示图像时,数据线中存储的电压的每一点变化都被完全反映出来,如图6的下部图中所示。因此,发现圆形显示面板具有亮度差,这使左侧区域和右侧区域看起来比中间更亮。
在寻找解决可仅在像圆形显示面板这样的不规则形状的显示面板中发生的亮度不均匀问题的方案而进行的许多试验中,基于试验例,以下示例性实施方式表现出优异的结果,因此将描述此示例性实施方式的构思。
图7示出了通过示例性实施方式的方法制造的圆形显示面板(上部图)以及数据线之间的寄生电容的测量结果(下部图)。在示例性实施方式的圆形显示面板中,位于显示区域AA内的数据线长度不同。
补偿电容器Ck或Cn(或虚拟电容器)增加到数据线。如图中所示,补偿电容器Ck或Cn的一侧可连接至数据线,另一侧可电气浮置或连接至电源(输送特定电压的电源或静态源)。
如果补偿电容器Ck或Cn的另一侧电气浮置,则存在补偿电容器Ck或Cn的特性可由于相邻信号线、内部或外部环境因素等而发生变化的可能性。相比之下,如果补偿电容器Ck或Cn的另一侧连接至与电源,则电容器的电容保持恒定并且因此能避免特性变化的可能性。
如图中所示,位于显示区域AA的中心处的第i数据线DLi在数据线之中具有最长的布线长度,而位于显示区域AA的右边缘上的第n数据线DLn在数据线之中具有最短的布线长度。
在第i数据线DLi上不存在补偿电容器。相比之下,在第n数据线DLn上存在补偿电容器。此外,在第i数据线DLi与第n数据线DLn之间的数据线上存在补偿电容器。例如,在第i数据线DLi与第n数据线DLn之间的第k数据线DLk上存在补偿电容器Ck。
补偿电容器根据每条数据线的长度而具有适当的电容值。特别地,补偿电容器通过初级测试(preliminary test)设为具有能够补偿数据线之间的寄生电容-寄生电容器的电容-的变化的电容值。
将试验电压施加到示例性实施方式的圆形显示面板并测量第i数据线DLi、第k数据线DLk和第n数据线DLn的电容器值的结果显示出,在第i数据线DLi、第k数据线DLk和第n数据线DLn之间存在约1至4pF的偏差。
此外,发现将数据电压施加到示例性实施方式的圆形显示面板后,第i数据线DLi、第k数据线DLk和第n数据线DLn以几乎相同/相似的电压充电,从而尽管存在一些电压差,但克服了亮度不均匀的问题。
结果,当在示例性实施方式的圆形显示面板上显示图像时,消除了数据线中存储的电压的变化,如图7的下部图所示。因此,发现基本上降低(或减轻)了圆形显示面板上的、使左侧区域和右侧区域看起来比中间更亮的亮度不同。
在本公开内容中,数据线布线区域可主要分为三个区段,补偿电容器可设置在这些区段中的一个或更多个区段中。为便于描述,以下将以补偿电容器设置在显示区域的上部和下部中为例进行描述。
如图8中所示,数据线布线区域包括数据走线部、有源区域部和虚拟电容器部。
数据走线部对应于数据驱动器130与显示区域AA之间的上部非显示区域(或连线区域)。有源区域部对应于显示区域AA中的布线区域。虚拟电容器部对应于显示区域AA与非显示区域NA之间的下部非显示区域。
补偿电容器C1、C2、C5和C6设置在显示区域AA的上部和下部中的数据走线部和虚拟电容器部处。以下将描述用于补偿数据线之中与较短数据线DL和最长数据线DL有关的变化的设计方案。
R1=R2:通过调整数据线的长度来保持电阻相同
R3=n1×R_unit(n1(<n2):较短数据线上的像素数量)
R4=n2×R_unit(n2:最长数据线上的像素数量)
R5、R6:数据线上的补偿电阻器(或虚拟电阻器)
C3=n1×C_unit
C4=n2×C_unit
C1、C2、C5、C6:显示区域的上部和下部中的数据线上的补偿电容器
(※R_unit,C_unit:像素阵列的电阻器和寄生电容器)
试验结果显示,通过使用示例性实施方式中的方案在显示面板上形成补偿电容器C1、C2、C5和C6,数据线之间的寄生电容器可设计成具有1%至20%范围的变化。
如上所述,数据线上存在的寄生电容器可设置成具有在1%至20%范围变化的电容值,并且变化的最大程度通过优化而缩小至15%、10%、5%等。
发现如果数据线之间的寄生电容器具有1%至20%范围的变化,则能够解决由于亮度不均匀导致的显示区域的左侧和右侧看起来更亮的问题。更优选地,数据线之间的寄生电容器可优化为具有1%至10%或更小的变化。
通过使用示例性实施方式中的方案在显示面板上设计补偿电容器C1、C2、C5和C6并优化这些补偿电容器,能够解决亮度不均匀的问题。
可使用以下示例之一放置补偿电容器。
图9图解了补偿电容器的放置方式的第一示例。图10图解了补偿电容器的放置方式的第二示例。图11图解了补偿电容器的放置方式的第三示例。图12是示出布置了补偿电容器的非显示区域的示图。
如图9中所示,补偿电容器布置在设置于显示面板110的显示区域AA的上侧和下侧上的非显示区域NA1和NA2中。例如,第一补偿电容器C1和第二补偿电容器C2可布置在上部非显示区域NA1中,第五补偿电容器C5和第六补偿电容器C6可布置在下部非显示区域NA2中。
如图10中所示,补偿电容器布置在设置于显示面板110的显示区域AA的左侧和右侧上的非显示区域NA3和NA4中。例如,第一补偿电容器C1和第五补偿电容器C5可布置在左侧非显示区域NA3中,第二补偿电容器C2和第六补偿电容器C6可布置在右侧非显示区域NA4中。
如图11中所示,补偿电容器布置在设置于显示面板110的显示区域AA的上侧、下侧、左侧和右侧上的非显示区域NA1、NA2、NA3和NA4中。例如,第一补偿电容器C1、第二补偿电容器C2、第五补偿电容器C5和第六补偿电容器C6可分别布置在设置于上侧、下侧、左侧和右侧中的非显示区域NA1、NA2、NA3和NA4中。
如图12中所示,当以放大的比例观察显示区域AA与非显示区域NA之间的区域时,该区域不是弧形的而是阶梯状的。因此,此区域中的第一和第五补偿电容器C1和C5或第二和第六补偿电容器C2和C6具有电平差,就好像每条数据线形成阶梯状轮廓。
如图7中所示,补偿电容器可根据数据线的长度而具有不同的电容值,并且补偿电容器可在一些部分中会集为单一电容值。例如,如果具有电平差的数据线彼此分开,如图12所示,则N条相邻数据线(N是大于或等于2的整数)可结合为一个组,并且对应于该组的补偿电容器可会集为单一电容值。
同时,可基于金属层(补偿电容器的第一电极层)和通过掺杂等而金属化的有源层(补偿电容器的第二电极层)以及插入金属层与有源层之间的绝缘膜(例如,无机膜或有机膜)提供补偿电容器C1、C2、C5和C6。此外,可基于通过掺杂等金属化的有源层和M个金属层(M是大于或等于2的整数)提供补偿电容器C1、C2、C5和C6。
在以上描述中,金属化的有源层是构成子像素的晶体管等的有源层,其是指基于氧化物半导体(例如,IGZO)的层。氧化物半导体通过诸如掺杂之类的工艺而具有金属特性而非半导体特性。
以上描述的试验例和示例性实施方式的圆形显示面板是以以下子像素电路为基础的。
图13是试验例和示例性实施方式的圆形显示面板中使用的子像素的电路构造的示图。图14是图13的圆形显示面板的驱动波形图。
如图13和14中所示,子像素具有7T(晶体管)1C(电容器)结构。第二晶体管T2a和T2b例如具有双晶体管结构,也可具有单晶体管结构。
以下将以子像素中包括的晶体管是P型晶体管为例进行描述,但晶体管也可以是N型晶体管。由此,源极电极和漏极电极的位置可根据晶体管的类型而变化,在以下描述中源极电极和漏极电极可被称作第一电极和第二电极。
第一晶体管T1具有连接至第1a栅极线GL1a的栅极电极、连接至第一数据线DL1的第一电极、以及连接至存储电容器Cstg的一端的第二电极。第一晶体管T1用于响应于第1a栅极信号SCAN1将通过第一数据线DL1提供的数据信号输送到存储电容器Cstg。
第2a晶体管T2a具有连接至第1b栅极线GL1b的栅极电极、连接至驱动晶体管DT的栅极电极的第一电极、以及连接至第2b晶体管T2b的第一电极的第二电极。第2b晶体管T2b具有连接至第1b栅极线GL1b的栅极电极、连接至第2a晶体管T2a的第二电极的第一电极、以及连接至驱动晶体管DT的第二电极的第二电极。第2a晶体管T2a和第2b晶体管T2b用于响应于第1b栅极信号SCAN2在驱动晶体管DT的栅极与源极之间实现二极管连接。
第三晶体管T3具有连接至第1c栅极线GL1c的栅极电极、连接至基准电压线VREF的第一电极、以及连接至存储电容器Cstg的一端的第二电极。第三晶体管T3用于响应于第1c栅极信号EM将基准电压Vref(或补偿电压)提供到存储电容器Cstg的一端。
第四晶体管T4具有连接至第1c栅极线GL1c的栅极电极、连接至驱动晶体管DT的第二电极的第一电极、以及连接至有机发光二极管OLED的阳极的第二电极。第四晶体管T4用于响应于第1c栅极信号EM将驱动电流输送到有机发光二极管OLED并使其发光。
第五晶体管T5具有连接至第1b栅极线GL1b的栅极电极、连接至基准电压线VREF的第一电极、以及连接至有机发光二极管OLED的阳极的第二电极。第五晶体管T5用于响应于第1b栅极信号SCAN2将基准电压Vref提供到有机发光二极管OLED的阳极。
驱动晶体管DT具有连接至存储电容器Cstg的另一端的栅极电极、连接至第一电源线EVDD的第一电极、以及连接至第四晶体管T4的第一电极的第二电极。驱动晶体管DT响应于从存储电容器Cstg提供的数据电压而导通,并产生驱动电流以将驱动电流提供到有机发光二极管OLED。
有机发光二极管OLED具有连接至第四晶体管T4的第二电极的阳极以及连接至第二电源线EVDD的阴极。有机发光二极管OLED用于响应于通过第四晶体管T4输送的驱动电流而发光。
如上构造的子像素具有补偿周期,在补偿周期期间执行用于补偿驱动晶体管DT的阈值电压Vth的补偿操作。在补偿周期期间,执行补偿操作,包括将基准电压Vref提供到基准电压线VREF并且将驱动晶体管DT进行二极管连接。
在补偿周期期间,第1a栅极信号SCAN1和第1b栅极信号SCAN2处于逻辑低状态,第1c栅极信号EM处于逻辑高状态。因此,驱动晶体管DT是二极管连接的,第一数据线DL1电气浮置。
如前面所述,第一数据线DL1上存在寄生电容器。因此,当栅极节点电压被采样以补偿(EVDD-Vth->EVDD-|Vth|)驱动晶体管DT的阈值电压Vth时,驱动晶体管DT的栅极节点电压升高。
如图13的图形的下部中,显示出驱动晶体管DT的栅极节点电压的变化,电压分布在“Cstg”的方向和“Cdata”的方向上。
就设计而言,尽管存储电容器Cstg的电容保持相同,但电压随着数据线的长度而变化,这导致亮度不同。作为参考,Cdata越小,耦合效果越强。在此情形下,由于数据电压的差异导致的亮度不同取决于耦合效果的程度。
因此,从其中基于子像素制造圆形显示面板的上述试验例观察到,因为在补偿周期期间提供了特定电压,诸如基准电压,所以由于数据线之间的电压差异(如在基准电压Vref+α中,α对于每条数据线是不同的)而导致了亮度不均匀的问题。
相比之下,从其中基于子像素制造圆形显示面板的上述示例性实施方式观察到,因为通过设置于数据线上的补偿电容器减小了寄生电容中的变化,所以由于补偿操作期间的电压变化导致的亮度不均匀问题被大大减小。
尽管以数据线作为信号线的示例给出了前面的描述,但本公开内容的构思可应用于位于显示区域中且其布线长度针对第一区域而不同的信号线,即提供信号或电压的线。在此,第一区域可定义为其中全部信号线之中具有最长布线长度的信号线,如图7的第i数据线所在的区域。第一区域可以是除中心以外的其他区域。
由以上可见,本公开内容通过防止或减小不规则形状的显示面板的信号线之间不可避免地存在的寄生元素(例如,寄生电容)的变化,能够解决亮度不均匀的问题并提高显示质量。此外,本公开内容能够防止或减小由于显示区域内布置的信号线的布线长度的差异而导致的补偿电压的变化。另外,本公开内容通过补偿寄生电容器的电容的变化能够使显示面板的亮度均匀。

Claims (9)

1.一种显示装置,包括:
具有非矩形形状的显示面板,所述显示面板包括界定在基板上的非显示区域和具有所述非矩形形状的显示区域;
位于所述显示区域内的信号线,所述信号线的长度根据所述显示区域内的位置而不同;和
补偿电容器,每个补偿电容器连接至所述信号线中的至少一条信号线,
其中相邻的N条信号线组合为一个组,并且对应于所述组的补偿电容器会集为单一电容值,其中N是大于或等于2的整数,
其中所述补偿电容器分别包括金属层、绝缘膜和金属化的有源层。
2.如权利要求1所述的显示装置,其中所述补偿电容器根据所述信号线的长度而具有不同的电容值。
3.如权利要求1所述的显示装置,其中所述补偿电容器形成为使得存在于所述信号线之间的寄生电容器具有在1%至20%范围变化的电容值。
4.如权利要求1所述的显示装置,其中所述补偿电容器布置在设置于所述显示区域的上侧和下侧上的非显示区域中。
5.如权利要求1所述的显示装置,其中所述补偿电容器布置在设置于所述显示区域的左侧和右侧上的非显示区域中。
6.如权利要求1所述的显示装置,其中所述补偿电容器布置在设置于所述显示区域的上侧、下侧、左侧和右侧上的非显示区域中。
7.如权利要求1所述的显示装置,其中所述补偿电容器的一端连接至所述信号线中的至少一条信号线,并且所述补偿电容器的另一端电气浮置或连接至电源。
8.一种显示装置的制造方法,所述方法包括:
在具有非矩形形状的显示面板中在基板上界定出非显示区域和具有所述非矩形形状的显示区域;
在所述显示区域内布置信号线,所述显示区域内的所述信号线的长度根据所述显示区域内的位置而不同;和
以将每个补偿电容器连接至所述信号线中的至少一条信号线的方式形成补偿电容器,
其中相邻的N条信号线组合为一个组,并且对应于所述组的补偿电容器会集为单一电容值,其中N是大于或等于2的整数,
其中所述补偿电容器分别包括金属层、绝缘膜和金属化的有源层。
9.如权利要求8所述的方法,其中在形成补偿电容器时,所述补偿电容器根据所述信号线的长度而具有不同的电容值。
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