CN106844809A - A kind of method and device for obtaining memory macro unit size - Google Patents
A kind of method and device for obtaining memory macro unit size Download PDFInfo
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- CN106844809A CN106844809A CN201510885139.3A CN201510885139A CN106844809A CN 106844809 A CN106844809 A CN 106844809A CN 201510885139 A CN201510885139 A CN 201510885139A CN 106844809 A CN106844809 A CN 106844809A
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Abstract
The present invention provides a kind of method and device for obtaining memory macro unit size.Methods described includes：Obtain whole framework domain elementary cells；Whole framework domain elementary cell is spliced according to default domain stitching algorithm, the memory macro newly-built unit of unit top layer is obtained；Coordinate according to whole framework domain elementary cell obtains the coordinate of the newly-built unit of memory macro unit top layer；Coordinate according to the newly-built unit of memory macro unit top layer calculates the size of the memory macro unit.The present invention can reduce the design complexities of memory compiler.
Description
Technical field
The present invention relates to memory technology field, more particularly to a kind of method for obtaining memory macro unit size
And device.
Background technology
With the continuous progress of semiconductor fabrication process and IC design ability, system level chip
The memory number used in (System-on-Chip, SoC) is increasing, due in same design
The memory for needing of all sizes or structure different, designs these and stores with the method for full custom completely
Device becomes extremely difficult.Memory compiler just turns into and is used for generating having for different size and the memory of function
Effect instrument and be widely used.When the programming of memory compiler produces memory macro unit, part design document
Need the size of acquisition memory macro unit, such as Datasheet, Synopsys Liberty model files etc..
It is that compiling produces true domain to obtain the most direct method of memory macro unit size, then reads layout size.
But in actual environment, due to copyright control, memory compiler differs the true version that surely provide
Figure, or because domain is produced by domain programming compiling, memory compiler is in earlier stages of design, still
True domain is not formed, it is therefore desirable to a set of method for being independent of true domain programming.
The method that true domain acquisition memory macro unit size is independent of in currently available technology is to table look-up, i.e.,
In memory compiler stage prefabricated portion with memory macro cell parameters (such as memory number of words, digit)
It is the size table of index, by the search memory macroelement parameter acquiring memory macro list in the size table
Elemental size information.
Realize it is of the invention during, inventor find at least there is following technical problem in the prior art：
Memory macro unit size is determined that possible parameter combination number is more by memory compiler parameter, to store
Device compiler parameter is that the size table data of index are huger, so as to the design for causing memory compiler is answered
Miscellaneous degree is greatly increased.
The content of the invention
A kind of method and device of acquisition memory macro unit size that the present invention is provided, can reduce memory
The design complexities of compiler.
In a first aspect, the present invention provides a kind of method for obtaining memory macro unit size, the acquisition storage
The method of device macroelement size includes：
Obtain whole framework domain elementary cells；
Whole framework domain elementary cell is spliced according to default domain stitching algorithm, is obtained
The newly-built unit of memory macro unit top layer；
It is newly-built that coordinate according to whole framework domain elementary cell obtains the memory macro unit top layer
The coordinate of unit；
Coordinate according to the newly-built unit of memory macro unit top layer calculates the chi of the memory macro unit
It is very little.
Alternatively, it is described that the memory macro is obtained according to the coordinate of whole framework domain elementary cell
The coordinate of the newly-built unit of unit top layer includes：
The minimum value of X-coordinate in each framework domain elementary cell lower left corner is taken as the memory macro unit top
The X-coordinate in the lower left corner of the newly-built unit of layer, takes the minimum value of the Y-coordinate in each framework domain elementary cell lower left corner
As the Y-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer；
The maximum of X-coordinate in each framework domain elementary cell upper right corner is taken as the memory macro unit top
The X-coordinate in the upper right corner of the newly-built unit of layer, takes the maximum of the Y-coordinate in each framework domain elementary cell upper right corner
As the Y-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer.
Alternatively, it is described that the memory is calculated according to the coordinate of the newly-built unit of memory macro unit top layer
The size of macroelement includes：
The X-coordinate in the X-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer and the lower left corner is made
Difference, obtains the width of the memory macro unit；By the upper right of the newly-built unit of memory macro unit top layer
The Y-coordinate at angle is poor with the Y-coordinate in the lower left corner, obtains the height of the memory macro unit.
Alternatively, the default domain stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
Alternatively, the storage is calculated according to the coordinate of the newly-built unit of memory macro unit top layer described
After the size of device macroelement, also including when needing to increase power ring for the memory macro unit, by institute
State power ring profile rectangle size as the memory macro unit size.
Second aspect, the present invention provides a kind of device for obtaining memory macro unit size, the acquisition storage
The device of device macroelement size includes：
First acquisition unit, for obtaining whole framework domain elementary cells；
Concatenation unit, for by whole framework domain elementary cell according to default domain stitching algorithm
Spliced, obtained the memory macro newly-built unit of unit top layer；
Second acquisition unit, for being deposited according to the acquisition of the coordinate of whole framework domain elementary cell
The coordinate of the newly-built unit of reservoir macroelement top layer；
Computing unit, for calculating the storage according to the coordinate of the newly-built unit of memory macro unit top layer
The size of device macroelement.
Alternatively, the second acquisition unit, the X-coordinate for taking each framework domain elementary cell lower left corner
Minimum value takes each framework domain base as the X-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer
The minimum value of the Y-coordinate in this unit lower left corner as the newly-built unit of memory macro unit top layer the lower left corner
Y-coordinate；The maximum of X-coordinate in each framework domain elementary cell upper right corner is taken as the memory macro list
The X-coordinate in the upper right corner of first newly-built unit of top layer, takes the Y-coordinate in each framework domain elementary cell upper right corner most
The big Y-coordinate being worth as the upper right corner of the newly-built unit of memory macro unit top layer.
Alternatively, the computing unit, for by the upper right corner of the newly-built unit of memory macro unit top layer
X-coordinate it is poor with the X-coordinate in the lower left corner, obtain the width of the memory macro unit；By the memory
The Y-coordinate in the upper right corner of the newly-built unit of macroelement top layer is poor with the Y-coordinate in the lower left corner, obtains the memory
The height of macroelement.
Alternatively, the default domain stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
Alternatively, the device for obtaining memory macro unit size also includes reset cell, for described
Computing unit calculates the memory macro unit according to the coordinate of the newly-built unit of memory macro unit top layer
After size, when needing to increase power ring for the memory macro unit, by the Contour moment of the power ring
The size of shape as the memory macro unit size.
A kind of method and device for obtaining memory macro unit size provided in an embodiment of the present invention, using framework
The method of domain programming obtains the size of memory macro unit, it is not necessary in memory compiler stage system
Make form such that it is able to reduce the design complexities of memory compiler.
Brief description of the drawings
Fig. 1 is the flow chart of the method that one embodiment of the invention obtains memory macro unit size；
Fig. 2 is the structural representation that one embodiment of the invention middle frame domain elementary cell is spliced；
Fig. 3 is the structural representation of the device that one embodiment of the invention obtains memory macro unit size.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the present invention
Accompanying drawing in embodiment, is clearly and completely described to the technical scheme in the embodiment of the present invention, it is clear that
Described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this hair
Embodiment in bright, the institute that those of ordinary skill in the art are obtained under the premise of creative work is not made
There is other embodiment, belong to the scope of protection of the invention.
Memory macro unit is the memory cell produced by the compiling of memory compiler, by one group of design document
Composition, generally includes domain, netlist, EDA views etc., and hereafter " macroelement " also refers to " memory macro list
Unit.Memory macro unit size refers to the width and height of memory macro unit.The acquisition memory macro unit
The method of size is realized by the method that framework domain is programmed.Its middle frame domain is programmed and programs phase with domain
Correspondence, domain programming is one of compiler task during memory compiler generation memory, and memory is compiled
The set that device is the storehouse and kit of the series of parameters for generating memory macro unit design document is translated, generally
Comprising modules such as domain programming, netlist programming, the generations of EDA views.Domain programming refers to the method using programming
The operation such as chosen, spliced, being drawn to domain elementary cell, newly-built unit and pel to form domain
Operation.The input that wherein domain elementary cell is programmed as domain, elementary cell is read in domain programming to be used to spell
Newly-built unit is connected into, domain elementary cell is also available for domain programming to call comprising a series of primitive informations in itself.
It refers to by each level group such as the metal of integrated circuit, oxide and semiconductor that wherein domain programs the domain to be formed
It is expressed as the form of plane geometry pel into part.The process of wherein domain programming is as follows：
1st, memory domain elementary cell is read；
2nd, spliced using memory domain elementary cell and form newly-built unit；
3rd, memory domain elementary cell and the newly-built unit for having spliced are continuing with, are spliced, until complete
Into the memory macro newly-built unit of unit top layer.
The process of framework domain programming is similar to above, and particular point is that read elementary cell is framework version
Figure elementary cell.Framework domain elementary cell is the rectangle for representing domain elementary cell overall size, is only included
One profile rectangle of geometric graphic element.Framework domain is made up of framework domain elementary cell, is only programmed containing domain
The profile rectangle of required geometric graphic element, without levels such as metal, oxide and semiconductors.
The embodiment of the present invention provides a kind of method for obtaining memory macro unit size, as shown in Figure 1, described
Method includes：
Step S11：Obtain whole framework domain elementary cells.
In memory compiler in early days, because complete domain is not yet complete, but can first by framework domain
Elementary cell it is drawn.Or, although memory compiling possesses complete domain, but due to copyright control etc.
Reason does not provide domain, can be in complete domain by the institute in addition to domain elementary cell profile rectangle
There is geometric graphic element all to delete, only surplus profile rectangle, to make framework domain, by framework domain so as to obtain frame
Frame domain elementary cell.
Step S12：Whole framework domain elementary cell is spelled according to default domain stitching algorithm
Connect, obtain the memory macro newly-built unit of unit top layer.The general principle of framework domain programming is module splicing,
High-level module is spliced to form since framework domain elementary cell, these modules are spliced again then
Until ultimately forming the memory macro newly-built unit of unit top layer.
As shown in Figure 2, framework domain elementary cell is spliced, to produce newly-built unit, newly-built unit
After the completion of splicing, a newly-built profile rectangle is in newly-built unit, being that follow-up splicing is prepared.Newly-built wheel
Wide rectangle, covers the profile rectangle of framework domain elementary cell used by all splicings, but is minimum vertex-covering list
One rectangle.Framework domain elementary cell and the newly-built unit for having spliced are continuing with, are spliced, until complete
Into the memory macro newly-built unit of unit top layer.The stitching algorithm and domain of module in framework domain programming herein
The stitching algorithm of module is consistent in programming, such as how to select submodule, and submodule is spliced in which way
Block, is consistent, so that it is guaranteed that most with the adjustment of position to sub- number of modules with joining method in domain programming
The size of the profile rectangle in the newly-built unit of top layer for obtaining afterwards keeps one with physical storage macroelement size
Cause.
Step S13：Coordinate according to whole framework domain elementary cell obtains the memory macro unit
The coordinate of the newly-built unit of top layer；
Step S14：Coordinate according to the newly-built unit of memory macro unit top layer calculates the memory macro list
The size of unit.
A kind of method for obtaining memory macro unit size provided in an embodiment of the present invention, is compiled using framework domain
The method of journey obtains memory macro unit size, it is not necessary to make form in the memory compiler stage,
So as to reduce the design complexities of memory compiler.
Alternatively, it is described that the memory macro is obtained according to the coordinate of whole framework domain elementary cell
The coordinate of the newly-built unit of unit top layer includes：Take the minimum value of the X-coordinate in each framework domain elementary cell lower left corner
As the X-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer, each framework domain elementary cell is taken
The minimum value of the Y-coordinate in the lower left corner is sat as the Y in the lower left corner of the newly-built unit of memory macro unit top layer
Mark；The maximum of X-coordinate in each framework domain elementary cell upper right corner is taken as the memory macro unit top layer
The X-coordinate in the upper right corner of newly-built unit, the maximum for taking the Y-coordinate in each framework domain elementary cell upper right corner is made
It is the Y-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer.
As shown in Figure 2, it is assumed that the coordinate in the framework domain elementary cell lower left corner and the upper right corner is respectively
(xi1, yi1), (xi2, yi2), the wherein value of i are 0-n, and wherein n is to form memory macro unit top
The number of the framework domain elementary cell of the newly-built unit of layer, then, the newly-built unit of memory macro unit top layer
The lower left corner and upper right angular coordinate are (min (x11, x21 ..., xn1), min (y11, y21 ..., yn1)),
(max (x12, x22 ..., xn2), max (y12, y22 ..., yn2)).
Alternatively, it is described that the memory is calculated according to the coordinate of the newly-built unit of memory macro unit top layer
The size of macroelement includes：By the X-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer and lower-left
The X-coordinate at angle is poor, obtains the width of the memory macro unit；The memory macro unit top layer is newly-built
The Y-coordinate in the upper right corner of unit is poor with the Y-coordinate in the lower left corner, obtains the height of the memory macro unit.
Alternatively, the default domain stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
The default domain stitching algorithm is that the splicing of framework domain programming middle frame domain elementary cell is calculated
Method, stitching algorithm and the stitching algorithm of domain elementary cell in domain programming of framework domain elementary cell keep
Unanimously, such as how to select elementary cell, elementary cell spliced in which way, to elementary cell number with
Joining method during the adjustment of position is programmed with domain is consistent, so that it is guaranteed that the top layer for finally obtaining is newly-built
The size of the profile rectangle in unit is consistent with physical storage macroelement size.
Alternatively, the storage is calculated according to the coordinate of the newly-built unit of memory macro unit top layer described
After the size of device macroelement, also including when needing to increase power ring for the memory macro unit, by institute
State power ring profile rectangle size as the memory macro unit size.
When needing to increase power ring for memory macro unit, now the memory macro newly-built unit of unit top layer
Profile rectangle be expanded to the profile rectangle of power ring.The size of power ring is during domain is programmed by version
Figure programming engine is calculated, while the size of the profile rectangle of power ring is also just obtained, the power ring
Profile rectangle size as memory macro unit size.
The embodiment of the present invention also provides a kind of device for obtaining memory macro unit size, as shown in figure 3, institute
Stating device includes：
First acquisition unit 31, for obtaining whole framework domain elementary cells；
Concatenation unit 32, calculates for whole framework domain elementary cell to be spliced according to default domain
Method is spliced, and obtains the memory macro newly-built unit of unit top layer；
Second acquisition unit 33, described in being obtained according to the coordinate of whole framework domain elementary cell
The coordinate of the newly-built unit of memory macro unit top layer；
Computing unit 34, for being deposited according to the calculating of the coordinate of the memory macro unit top layer newly-built unit
The size of reservoir macroelement.
In memory compiler in early days, because complete domain is not yet complete, but can first by framework domain
Elementary cell it is drawn.Or, although memory compiling possesses complete domain, but due to copyright control etc.
Reason does not provide domain, can be in complete domain by the institute in addition to domain elementary cell profile rectangle
There is geometric graphic element all to delete, only surplus profile rectangle, to make framework domain, by framework domain so as to obtain frame
Frame domain elementary cell.Framework domain programming, the programming of framework domain are carried out after obtaining framework domain elementary cell
General principle be module splicing, be spliced to form high-level module since framework domain elementary cell, so
These modules are spliced until ultimately forming the memory macro newly-built unit of unit top layer again afterwards.
As shown in Figure 2, elementary cell is spliced, to produce newly-built unit, newly-built unit spliced is complete
Cheng Hou, a newly-built profile rectangle is in newly-built unit, being that follow-up splicing is prepared.Newly-built profile rectangle,
The profile rectangle of framework domain elementary cell used by all splicings is covered, but is minimum vertex-covering single rectangular.
Elementary cell and the newly-built unit for having spliced are continuing with, are spliced, until completing memory macro unit top
The newly-built unit of layer.The splicing of module during the stitching algorithm of module is programmed with domain in framework domain programming herein
Algorithm is consistent, such as how to select submodule, and submodule is spliced in which way, to sub- number of modules
Adjustment with position is consistent with joining method in domain programming, so that it is guaranteed that the top layer for finally obtaining is newly-built
The size of the profile rectangle in unit is consistent with physical storage macroelement size.
A kind of device for obtaining memory macro unit size provided in an embodiment of the present invention, it is not necessary in memory
The compiler stage makes form, substantially reduces the design complexities of memory compiler.
Alternatively, the second acquisition unit 33, the X-coordinate for taking each framework domain elementary cell lower left corner
Minimum value as the X-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer, take each framework domain
The minimum value of the Y-coordinate in the elementary cell lower left corner as the newly-built unit of memory macro unit top layer lower-left
The Y-coordinate at angle；The maximum of X-coordinate in each framework domain elementary cell upper right corner is taken as the memory macro
The X-coordinate in the upper right corner of the newly-built unit of unit top layer, takes the Y-coordinate in each framework domain elementary cell upper right corner
Maximum as the upper right corner of the newly-built unit of memory macro unit top layer Y-coordinate.
As shown in Figure 2, it is assumed that the coordinate in the framework domain elementary cell lower left corner and the upper right corner is respectively
(xi1, yi1), (xi2, yi2), the wherein value of i are 0-n, and wherein n is new to form memory macro unit top layer
Build the number of the framework domain elementary cell of unit, then, the profile of the newly-built unit of memory macro unit top layer
The lower left corner of rectangle and upper right angular coordinate for (min (x11, x21 ..., xn1), min (y11, y21 ...,
Yn1)), (max (x12, x22 ..., xn2), max (y12, y22 ..., yn2)).
Alternatively, the computing unit 34, for by the upper right of the newly-built unit of memory macro unit top layer
The X-coordinate at angle is poor with the X-coordinate in the lower left corner, obtains the width of the memory macro unit；By the storage
The Y-coordinate in the upper right corner of the newly-built unit of device macroelement top layer is poor with the Y-coordinate in the lower left corner, obtains the storage
The height of device macroelement.
Alternatively, the default domain stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
The default domain stitching algorithm is that the splicing of framework domain programming middle frame domain elementary cell is calculated
Method, stitching algorithm and the stitching algorithm of domain elementary cell in domain programming of framework domain elementary cell keep
Unanimously, such as how to select elementary cell, elementary cell spliced in which way, to elementary cell number with
Joining method during the adjustment of position is programmed with domain is consistent, so that it is guaranteed that the top layer for finally obtaining is newly-built
The size of the profile rectangle in unit is consistent with physical storage macroelement size.
Alternatively, the device for obtaining memory macro unit size also includes reset cell, for described
Computing unit calculates the memory macro unit according to the coordinate of the newly-built unit of memory macro unit top layer
After size, when needing to increase power ring for the memory macro unit, by the Contour moment of the power ring
The size of shape as the memory macro unit size.
When needing to increase power ring for memory macro unit, now the memory macro newly-built unit of unit top layer
Profile rectangle be expanded to the profile rectangle of power ring.The size of power ring is during domain is programmed by version
Figure programming engine is calculated, while the size of the profile rectangle of power ring is also just obtained, the power ring
Profile rectangle size as memory macro unit size.
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited to
This, any one skilled in the art the invention discloses technical scope in, can readily occur in
Change or replacement, should all be included within the scope of the present invention.Therefore, protection scope of the present invention
Should be defined by scope of the claims.
Claims (10)
1. it is a kind of obtain memory macro unit size method, it is characterised in that methods described includes：
Obtain whole framework domain elementary cells；
Whole framework domain elementary cell is spliced according to default domain stitching algorithm, is obtained
The newly-built unit of memory macro unit top layer；
It is newly-built that coordinate according to whole framework domain elementary cell obtains the memory macro unit top layer
The coordinate of unit；
Coordinate according to the newly-built unit of memory macro unit top layer calculates the chi of the memory macro unit
It is very little.
2. it is according to claim 1 obtain memory macro unit size method, it is characterised in that institute
State and the newly-built list of memory macro unit top layer is obtained according to the coordinate of whole framework domain elementary cell
The coordinate of unit includes：
The minimum value of X-coordinate in each framework domain elementary cell lower left corner is taken as the memory macro unit top
The X-coordinate in the lower left corner of the newly-built unit of layer, takes the minimum value of the Y-coordinate in each framework domain elementary cell lower left corner
As the Y-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer；
The maximum of X-coordinate in each framework domain elementary cell upper right corner is taken as the memory macro unit top
The X-coordinate in the upper right corner of the newly-built unit of layer, takes the maximum of the Y-coordinate in each framework domain elementary cell upper right corner
As the Y-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer.
3. it is according to claim 2 obtain memory macro unit size method, it is characterised in that institute
State the size bag that the memory macro unit is calculated according to the coordinate of the newly-built unit of memory macro unit top layer
Include：
The X-coordinate in the X-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer and the lower left corner is made
Difference, obtains the width of the memory macro unit；By the upper right of the newly-built unit of memory macro unit top layer
The Y-coordinate at angle is poor with the Y-coordinate in the lower left corner, obtains the height of the memory macro unit.
4. it is according to claim 1 obtain memory macro unit size method, it is characterised in that institute
It is the stitching algorithm of domain elementary cell in domain programming to state default domain stitching algorithm.
5. it is according to claim 1 obtain memory macro unit size method, it is characterised in that
The size that the memory macro unit is calculated according to the coordinate of the newly-built unit of memory macro unit top layer
Afterwards, also include：
When needing to increase power ring for the memory macro unit, by the chi of the profile rectangle of the power ring
The very little size as the memory macro unit.
6. it is a kind of obtain memory macro unit size device, it is characterised in that described device includes：
First acquisition unit, for obtaining whole framework domain elementary cells；
Concatenation unit, for by whole framework domain elementary cell according to default domain stitching algorithm
Spliced, obtained the memory macro newly-built unit of unit top layer；
Second acquisition unit, for being deposited according to the acquisition of the coordinate of whole framework domain elementary cell
The coordinate of the newly-built unit of reservoir macroelement top layer；
Computing unit, for calculating the storage according to the coordinate of the newly-built unit of memory macro unit top layer
The size of device macroelement.
7. it is according to claim 6 obtain memory macro unit size device, it is characterised in that
The second acquisition unit, makees for taking the minimum value of X-coordinate in each framework domain elementary cell lower left corner
It is the X-coordinate in the lower left corner of the newly-built unit of memory macro unit top layer, takes each framework domain elementary cell left
The minimum value of the Y-coordinate of inferior horn as the lower left corner of the newly-built unit of memory macro unit top layer Y-coordinate；
The maximum for taking the X-coordinate in each framework domain elementary cell upper right corner is new as the memory macro unit top layer
The X-coordinate in the upper right corner of unit is built, the maximum conduct of the Y-coordinate in each framework domain elementary cell upper right corner is taken
The Y-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer.
8. it is according to claim 7 obtain memory macro unit size device, it is characterised in that
The computing unit, for by the X-coordinate in the upper right corner of the newly-built unit of memory macro unit top layer and lower-left
The X-coordinate at angle is poor, obtains the width of the memory macro unit；The memory macro unit top layer is newly-built
The Y-coordinate in the upper right corner of unit is poor with the Y-coordinate in the lower left corner, obtains the height of the memory macro unit.
9. it is according to claim 6 obtain memory macro unit size device, it is characterised in that institute
It is the stitching algorithm of domain elementary cell in domain programming to state default domain stitching algorithm.
10. it is according to claim 6 obtain memory macro unit size device, it is characterised in that also
Including reset cell, in the computing unit according to the seat of the newly-built unit of memory macro unit top layer
Mark is calculated after the size of the memory macro unit, when needing to be that the memory macro unit increases power ring
When, using the size of the profile rectangle of the power ring as the memory macro unit size.
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