CN106841396A - Silicone base capacitance acoustic emission sensor and preparation method thereof - Google Patents
Silicone base capacitance acoustic emission sensor and preparation method thereof Download PDFInfo
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- CN106841396A CN106841396A CN201510881188.XA CN201510881188A CN106841396A CN 106841396 A CN106841396 A CN 106841396A CN 201510881188 A CN201510881188 A CN 201510881188A CN 106841396 A CN106841396 A CN 106841396A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
Abstract
The present invention provides a kind of silicone base capacitance acoustic emission sensor and preparation method thereof, including：Sound emission sensitive membrane；Ring is stopped, positioned at the lower surface of sound emission sensitive membrane；Frame, positioned at sound emission sensitive membrane periphery, and is separated by certain spacing with sound emission sensitive membrane；The upper surface of frame is provided with Top electrode, and lower surface is provided with the first insulating barrier；Support membrane, between sound emission sensitive membrane and frame；Bottom electrode silicon chip, lower surface is provided with bottom electrode, and upper surface is provided with the second insulating barrier；Second insulating barrier is corresponding up and down with the first insulating barrier, and is welded together by solder layer.Support membrane deforms under atmospheric pressure effect so that stop the upper surface that ring adheres on bottom electrode silicon chip, and acoustic emission signal can be preferably coupled in sound emission sensitive membrane；After ring being stopped under atmospheric pressure is acted on and adheres on the upper surface of bottom electrode silicon chip, submicron/nanometer gap is formed between sound emission sensitive membrane and bottom electrode silicon chip, the sensitivity of sensor can be greatly enhanced.
Description
Technical field
The present invention relates to sensor field, more particularly to a kind of silicone base capacitance acoustic emission sensor and preparation method thereof.
Background technology
Acoustic emission sensor can be realized to mobile defect by measuring the acoustic vibration signal that defect in material sends in change procedure
Detection even position, be a kind of sensor for having an important application prospect.
The acoustic vibration signal that defect sends in change procedure, that is, acoustic emission signal, are very faint, and its amplitude exists
10-9~10-12The magnitude of rice.As a comparison, the average lattice constant of silicon is 5.4 × 10-10Rice.
Existing acoustic emission sensor is typically made using piezoelectric, but piezoelectric is difficult, and piezoelectricity integrated with circuit
The price of formula sensor is also costly.
Using the silicone base capacitance acoustic emission sensor of silicon microelectromechanicgyroscope fabrication techniques be easy to high-volume manufacture, be easy to it is integrated with circuit,
Also allow for making array-type sensor, be promising technology.
The challenge of silicone base capacitance acoustic emission sensor is, the sensitization capacitance gap of general silicon based sensor in micron dimension,
For detecting 10-9~10-12During the acoustic vibration signal of rice magnitude, sensitivity is relatively low.Reduce sensitization capacitance gap even to be received to sub-micron
Metrical scale can dramatically increase acoustic emission sensor sensitivity, but the gap manufacture difficulty of submicron/nanometer yardstick is high, realizes difficulty
Greatly.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of silicone base capacitance acoustic emission sensor and
Its preparation method, it is integrated using circuit is not easy to caused by piezoelectric making acoustic emission sensor in the prior art for solving,
And the problem of expensive problem, the sensitization capacitance gap due to silicone base capacitance acoustic emission sensor cause in micron dimension
The relatively low problem of sensitivity and submicron/nanometer yardstick sensitization capacitance gap manufacture difficulty is high, the problem that is difficult to.
In order to achieve the above objects and other related objects, the present invention provides a kind of silicone base capacitance acoustic emission sensor, the silicon substrate
Condenser type acoustic emission sensor includes：
Sound emission sensitive membrane；
Ring is stopped, positioned at the lower surface of the sound emission sensitive membrane；
Frame, positioned at sound emission sensitive membrane periphery, and is separated by certain spacing with the sound emission sensitive membrane；The frame
Upper surface be provided with Top electrode, lower surface is provided with the first insulating barrier；
Support membrane, between the sound emission sensitive membrane and the frame, and inner side is connected with the sound emission sensitive membrane,
Outside is connected with the frame；
Bottom electrode silicon chip, under first insulating barrier, the support membrane, the sound emission sensitive membrane and the stop ring
Side, and it is separated by certain spacing with the sound emission sensitive membrane；The lower surface of the bottom electrode silicon chip is provided with bottom electrode, upper surface
It is provided with the second insulating barrier；Second insulating barrier is corresponding up and down with first insulating barrier, and is welded together by solder layer,
Vacuum chamber is formed between the sound emission sensitive membrane and the bottom electrode silicon chip.
As a kind of preferred scheme of silicone base capacitance acoustic emission sensor of the invention, the sound emission sensitive membrane be shaped as circle
Shape, square or rectangle.
Used as a kind of preferred scheme of silicone base capacitance acoustic emission sensor of the invention, the material of the stop ring is insulating materials.
Used as a kind of preferred scheme of silicone base capacitance acoustic emission sensor of the invention, the thickness of the stop ring is
100nm~1 μm.
Used as a kind of preferred scheme of silicone base capacitance acoustic emission sensor of the invention, the support membrane becomes under atmospheric pressure effect
Shape, to cause that the stop ring adheres on the upper surface of the bottom electrode silicon chip, the maximum stress of the support membrane is less than the branch
Support the fracture strength of membrane material.
As a kind of preferred scheme of silicone base capacitance acoustic emission sensor of the invention, the sound emission sensitive membrane and the lower electricity
The spacing of pole silicon chip is micron dimension.
The present invention also provides a kind of preparation method of silicone base capacitance acoustic emission sensor, the silicone base capacitance acoustic emission sensor
Preparation method include：
1) provide and make silicon chip, annular groove is formed in the making silicon chip bottom；
2) dielectric isolation layer is formed in the making silicon chip bottom and the annular groove bottom, it is recessed that removal part is located at the annular
The dielectric isolation layer of trench bottom so that positioned at the dielectric isolation layer and the annular groove side of the annular groove bottom
Wall is separated by certain spacing；
3) low stress polysilicon layer is formed in the annular groove, the low stress polysilicon layer covers the dielectric isolation layer；
4) photoetching, etching form the positioned at the dielectric isolation layer of the making silicon chip bottom with the making silicon chip bottom
One insulating barrier and stop ring；
5) bottom electrode silicon chip is provided, bottom electrode is formed in the bottom electrode silicon chip lower surface, and in the bottom electrode silicon chip upper surface
The second insulating barrier is formed, second insulating barrier is corresponding up and down with first insulating barrier；
6) solder layer is formed in second surface of insulating layer, and first insulating barrier and second insulating barrier is passed through described
Solder layer welds together；
7) the making silicon chip upper surface that subsequently form frame region in correspondence forms Top electrode；
8) photoetching, the etching making silicon chip, and the dielectric isolation layer above the low stress polysilicon layer is removed,
To form sound emission sensitive membrane and frame.
As a kind of preferred scheme of the preparation method of silicone base capacitance acoustic emission sensor of the invention, step 2) in, in institute
The thickness for stating the dielectric isolation layer for making silicon chip bottom and annular groove bottom formation is 100nm~1 μm.
As a kind of preferred scheme of the preparation method of silicone base capacitance acoustic emission sensor of the invention, step 3) in, in institute
Stating after formed in annular groove the low stress polysilicon layer, also including being doped to the low stress polysilicon layer the step of.
As a kind of preferred scheme of the preparation method of silicone base capacitance acoustic emission sensor of the invention, the first insulating barrier, institute are stated
The thickness sum for stating the second insulating barrier and the solder layer is micron dimension.
As a kind of preferred scheme of the preparation method of silicone base capacitance acoustic emission sensor of the invention, step 8) in, formed
The sound emission sensitive membrane be shaped as circular, square or rectangle.
Silicone base capacitance acoustic emission sensor of the invention and preparation method thereof, has the advantages that：Support membrane is in atmospheric pressure
The lower deformation of effect so that stop the upper surface that ring adheres on bottom electrode silicon chip so that acoustic emission signal can preferably be coupled to sound
In transmitting sensitive membrane；The thickness for stopping ring is 100nm~1 μm, and stopping ring under atmospheric pressure effect adheres on the upper of bottom electrode silicon chip
After surface, submicron/nanometer gap is formed between sound emission sensitive membrane and bottom electrode silicon chip, the spirit of sensor can be greatly enhanced
Sensitivity；In manufacturing process, sound emission sensitive membrane is micron dimension with the spacing of bottom electrode silicon chip, and size is larger, reduces processing
Difficulty, yield rate is higher.
Brief description of the drawings
Fig. 1 is shown as the cross section structure schematic diagram of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention one.
Fig. 2 is shown as the dimensional structure diagram of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention one.
Fig. 3 is shown as the fractionation structure that silicone base capacitance acoustic emission sensor splits from solder layer provided in the embodiment of the present invention one
Schematic diagram.
Fig. 4 is shown as the work vibration shape schematic diagram of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention one.
Fig. 5 is shown as the dimensional structure diagram of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention two.
Fig. 6 is shown as the fractionation structure that silicone base capacitance acoustic emission sensor splits from solder layer provided in the embodiment of the present invention two
Schematic diagram.
Fig. 7 is shown as the work vibration shape schematic diagram of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention two.
The flow that Fig. 8 is shown as the preparation method of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention three is illustrated
Figure.
Fig. 9 to Figure 15 is shown as each step of preparation method of the silicone base capacitance acoustic emission sensor provided in the embodiment of the present invention three
Structural representation.
Component label instructions
100 sound emission sensitive membranes
101 stop ring
102 frames
103 Top electrodes
104 first insulating barriers
105 support membranes
106 bottom electrode silicon chips
107 bottom electrodes
108 second insulating barriers
109 solder layers
110 vacuum chambers
201 make silicon chip
202 annular grooves
203 dielectric isolation layers
204 low stress polysilicon layers
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand other advantages of the invention and effect easily.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, without departing from essence of the invention
Various modifications or alterations are carried out under god.
Fig. 1 to Figure 15 is referred to it should be noted that the diagram provided in the present embodiment only illustrates of the invention in a schematic way
Basic conception, though component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in diagram and
Size is drawn, and it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment one
Fig. 1 is referred to, the present invention provides a kind of silicone base capacitance acoustic emission sensor, and the present invention provides a kind of silicone base capacitance sound
Emission sensor, the silicone base capacitance acoustic emission sensor includes：Sound emission sensitive membrane 100；Stop ring 101, the stop
Ring 101 is located at the lower surface of the sound emission sensitive membrane 100；Frame 102, it is sensitive that the frame 102 is located at the sound emission
The periphery of film 100, and it is separated by certain spacing with the sound emission sensitive membrane 100；The upper surface of the frame 102 is provided with electricity
Pole 103, lower surface is provided with the first insulating barrier 104；Support membrane 105, the support membrane 105 is located at the sound emission sensitive membrane 100
Between the frame 102, and the inner side of the support membrane 105 is connected with the sound emission sensitive membrane 100, the support
The outside of film 105 is connected with the frame 102；Bottom electrode silicon chip 106, the bottom electrode silicon chip 106 is located at described first
Insulating barrier 104, the support membrane 105, the sound emission sensitive membrane 100 and it is described stop ring 101 lower section, and with the sound
Transmitting sensitive membrane 100 is separated by certain spacing；The lower surface of the bottom electrode silicon chip 106 is provided with bottom electrode 107, and upper surface sets
There is the second insulating barrier 108；Second insulating barrier 108 is corresponding about 104 with first insulating barrier, and by solder layer 109
Weld together, to form vacuum chamber 110 between the sound emission sensitive membrane 100 and the bottom electrode silicon chip 106.
As an example, the material of the sound emission sensitive membrane 100 can be but be not limited only to monocrystalline silicon, it is preferable that the present embodiment
In, the material of the sound emission sensitive membrane 100 is attached most importance to doped monocrystalline silicon.
As an example, the shape of the sound emission sensitive membrane 100 can be set according to actual needs, it is preferable that this implementation
In example, the sound emission sensitive membrane 100 is shaped as circle, as shown in Figures 2 and 3.
As an example, the material for stopping ring 101 is insulating materials, it is preferable that the material of the stop ring 101 can be
But it is not limited only to silica, low stress SiNx etc..
As an example, the shape for stopping ring 101 can be actually needed according to and be set, it is preferable that in the present embodiment,
It is described stop ring 101 be shaped as be not limited thereto in annular shape, but specific embodiment.
As an example, the thickness for stopping ring 101 can be set according to actual needs, it is preferable that the stop ring 101
Thickness be submicron/nanometer level, it is further preferable that in the present embodiment, the thickness for stopping ring 101 is 100nm~1 μm.
The thickness for stopping ring 101 is equal to the electrode gap of the silicone base capacitance acoustic emission sensor during due to work, will be described
The thickness for stopping ring 101 is set as being 100nm~1 μm, and the stop ring 101 adheres on the lower electricity under atmospheric pressure effect
After the upper surface of pole silicon chip 106, sub-micron/receive is formed between the sound emission sensitive membrane 100 and the bottom electrode silicon chip 106
Rice gap, can be greatly enhanced the sensitivity of the silicone base capacitance acoustic emission sensor.
As an example, the frame 102 can be used made with the identical material of the sound emission sensitive membrane 100, in actual work
In skill, the frame 102 is to be formed by processing same silicon wafer to manufacture with the sound emission sensitive membrane 100, it is preferable that this reality
In applying example, the material of the frame 102 is attached most importance to doped monocrystalline silicon.
As an example, the support membrane 105 is the sound emission sensitive membrane 100 offer being electrically connected and sensitive to the sound emission
Film 100 provides mechanical support, and the support membrane 105 can deform under atmospheric pressure effect, to cause the stop ring 101
The upper surface of the bottom electrode silicon chip 106 can be adhered on；The maximum stress of the support membrane 105 is less than the material of the support membrane 105
The fracture strength of material, the maximum stress of the support membrane 105 can be obtained by finite element modelling.The support membrane 105 needs
Can be conductive and good contact be realized with the sound emission sensitive membrane 100, the material of the support membrane 105 can be but not only limit
In polysilicon, correspondence polysilicon support membrane, its maximum stress should be less than 300MPa.
As an example, the shape of the support membrane 105 should between the sound emission sensitive membrane 100 and the frame 102
Gap shape it is identical, i.e., described support membrane 105 should be completely covered positioned at the sound emission sensitive membrane 100 and the frame 102
Between gap, with ensure the sound emission sensitive membrane 100, the frame 102, the support membrane 105, it is described first insulation
The layer 104, solder layer 109, second insulating barrier 108 and the bottom electrode silicon chip 106 can be collectively forming and be fully sealed
The vacuum chamber 110.
As an example, the Top electrode 103 positioned at the upper surface of the frame 102 can realize the sound emission sensitive membrane 100
Electricity draw, the material of the Top electrode 103 can be the electrode material used in existing integrated circuit and micromechanical process,
Preferably, in the present embodiment, the material of the Top electrode 103 can be but be not limited only to aluminium, chrome gold, titanium tungsten/gold or titanium tungsten/
Copper etc..
As an example, the material of first insulating barrier 104 can be the insulation commonly used in existing integrated circuit and micromechanical process
Material, the material of first insulating barrier 104 can be identical with the material of the stop ring 101, i.e., described first insulating barrier 104
Material can be but be not limited only to silica, low stress SiNx etc..In the present embodiment, first insulating barrier 104
And the ring 101 of stopping is for same insulating barrier processing and fabricating is formed.
As an example, the bottom electrode silicon chip 106 can be any one silicon chip employed in existing semiconductor technology, it is preferable that
In the present embodiment, the bottom electrode silicon chip 106 can be but be not limited only to monocrystalline silicon piece.
As an example, the bottom electrode silicon chip 106 is separated by certain spacing, the bottom electrode with the sound emission sensitive membrane 100
Silicon chip 106 is collectively forming sensitization capacitance with the sound emission sensitive membrane 100；The bottom electrode silicon chip 106 is quick with the sound emission
Feel film 100 spacing be equal to first insulating barrier 104, second insulating barrier 108 and the solder layer 109 thickness it
With, it is preferable that in the present embodiment, the bottom electrode silicon chip 106 is micron dimension with the spacing of the sound emission sensitive membrane 100.
As an example, the bottom electrode 107 can realize that the electricity of the bottom electrode silicon chip 106 is drawn, the bottom electrode 107
Material can be the electrode material used in existing integrated circuit and micromechanical process, it is preferable that in the present embodiment, it is described under
The material of electrode 107 can be but be not limited only to aluminium, chrome gold, titanium tungsten/gold or titanium tungsten/copper etc..
As an example, the material of second insulating barrier 108 can be the insulation commonly used in existing integrated circuit and micromechanical process
Material, the material of second insulating barrier 108 can be identical with the material of the stop ring 101 and first insulating barrier 104,
The material of i.e. described second insulating barrier 108 can be but be not limited only to silica, low stress SiNx etc..
As an example, the solder layer 109 can realize that the frame 102 is connected with the bonding of the bottom electrode silicon chip 106,
And realize that vacuum is realized in gap between the bottom electrode silicon chip 106 and the sound emission sensitive membrane 100, the solder layer 109
Material can be vacuum welding material, such as aluminium germanium solder or gold solder.
The operation principle of the silicone base capacitance acoustic emission sensor of the invention is：The bottom electrode 107 with treat measurement system phase
After connection, the acoustic emission signal for treating defect generation in measurement system can be by the bottom electrode silicon chip 106, the solder
Layer 109 and the stop ring 101 are coupled in the sound emission sensitive membrane 100 so that the sound emission sensitive membrane is about 100
Vibrations, the capacitor's capacity for causing the sound emission sensitive membrane 100 to be formed with the bottom electrode silicon chip 106 changes, and detects institute
The change for stating the capacitor's capacity that sound emission sensitive membrane 100 is formed with the bottom electrode silicon chip 106 can just measure corresponding sound emission
Signal, the work vibration shape schematic diagram of the silicone base capacitance acoustic emission sensor is as shown in Figure 4.
In the silicone base capacitance acoustic emission sensor of the present embodiment, the support membrane 105 deforms under atmospheric pressure effect, makes
Obtain the upper surface that the stop ring 101 adheres on the bottom electrode silicon chip 106 so that acoustic emission signal can preferably be coupled to
In the sound emission sensitive membrane 100；The thickness for stopping ring 101 is 100nm~1 μm, the stop under atmospheric pressure effect
Ring 101 is adhered on after the upper surface of the bottom electrode silicon chip 106, the sound emission sensitive membrane 100 and the bottom electrode silicon chip
Submicron/nanometer gap is formed between 106, the sensitivity of the silicone base capacitance acoustic emission sensor can be greatly enhanced；It is described
Sound emission sensitive membrane 100 is micron dimension with the spacing of the bottom electrode silicon chip 106, and size is larger, greatly reduces difficult processing
Degree, yield rate is higher.
Embodiment two
Fig. 5 to Fig. 7 is referred to, the present invention also provides a kind of silicone base capacitance acoustic emission sensor, the silicon in the present embodiment
Base capacitance acoustic emission sensor is roughly the same with the structural principle of the silicone base capacitance acoustic emission sensor described in embodiment one,
The difference of the two is：In embodiment one, the sound emission sensitive membrane 100 is shaped as circle, the shape of the stop ring 101
Shape is annular, and in the present embodiment, and the sound emission sensitive membrane 100 is shaped as square, the shape of the stop ring 101
Shape is square annular.
Embodiment three
Fig. 8 is referred to, the present invention also provides a kind of preparation method of silicone base capacitance acoustic emission sensor, the preparation method bag
Include：
1) provide and make silicon chip, annular groove is formed in the making silicon chip bottom；
2) dielectric isolation layer is formed in the making silicon chip bottom and the annular groove bottom, it is recessed that removal part is located at the annular
The dielectric isolation layer of trench bottom so that positioned at the dielectric isolation layer and the annular groove side of the annular groove bottom
Wall is separated by certain spacing；
3) low stress polysilicon layer is formed in the annular groove, the low stress polysilicon layer covers the dielectric isolation layer；
4) photoetching, etching form the positioned at the dielectric isolation layer of the making silicon chip bottom with the making silicon chip bottom
One insulating barrier and stop ring；
5) bottom electrode silicon chip is provided, bottom electrode is formed in the bottom electrode silicon chip lower surface, and in the bottom electrode silicon chip upper surface
The second insulating barrier is formed, second insulating barrier is corresponding up and down with first insulating barrier；
6) solder layer is formed in second surface of insulating layer, and first insulating barrier and second insulating barrier is passed through described
Solder layer welds together；
7) the making silicon chip upper surface that subsequently form frame region in correspondence forms Top electrode；
8) photoetching, the etching making silicon chip, and the dielectric isolation layer above the low stress polysilicon layer is removed,
To form sound emission sensitive membrane and frame.
In step 1) in, S1 steps and the Fig. 9 in Fig. 8 are referred to, there is provided make silicon chip 201, in the making silicon chip 201
Annular groove 202 is formed on bottom.
As an example, the making silicon chip 201 can be any one silicon chip, the making silicon chip 201 in existing semiconductor technology
Can be but be not limited only to monocrystalline silicon piece, it is preferable that in the present embodiment, the making silicon chip 201 is attached most importance to doped monocrystalline silicon sheet.
As an example, forming the annular groove 202 in the bottom of the making silicon chip 201 using photoetching, etching technics, have
Body method is：First, in the bottom spin coating photoresist layer (not shown) of the making silicon chip 201, by photoetching process figure
Change the photoresist layer, to define the figure of the annular groove 202 in the photoresist layer；Then, according to graphical
The photoresist layer etching it is described make silicon chip 201 bottom, with it is described making silicon chip 201 bottom form the annular
Groove 202；Finally, the photoresist layer is removed.
As an example, the shape of the annular groove 202 can be circular, square ring-type or rectangular ring.
In step 2) in, S2 steps and the Figure 10 in Fig. 8 are referred to, it is recessed in the making bottom of silicon chip 201 and the annular
Dielectric isolation layer 203 is formed on the bottom of groove 202, and removal part is located at the dielectric isolation layer 203 of the bottom of the annular groove 202,
So that the dielectric isolation layer 203 positioned at the bottom of the annular groove 202 be separated by with the side wall of the annular groove 202 it is certain
Spacing.
As an example, can be recessed in the making bottom of silicon chip 201 and the annular using thermally grown method, chemical vapour deposition technique
The dielectric isolation layer 203 is formed on the bottom of groove 202, and the material of the dielectric isolation layer 203 can be silica or low stress
Silicon nitride.
As an example, being located at the dielectric isolation layer of the bottom of the annular groove 202 using photoetching, etching technics removal part
203, specific method is：First, in the making bottom of silicon chip 201 and the bottom spin coating photoresist layer of the annular groove 202 (not
Show), by the graphical photoresist layer of photoetching process, the institute of etching removal is needed to be defined in the photoresist layer
State the figure of dielectric isolation layer 203；Then, the dielectric isolation layer 203 is etched according to the patterned photoresist layer；Most
Afterwards, the photoresist layer is removed.
As an example, the dielectric isolation layer 203 formed in the making bottom of silicon chip 201 and the bottom of the annular groove 202
Thickness be 100nm~1 μm.
In step 3) in, S3 steps and the Figure 11 in Fig. 8 are referred to, low stress polycrystalline is formed in the annular groove 202
Silicon layer 204, the dielectric isolation layer 203 of the covering of low stress polysilicon layer 204 positioned at the bottom of the annular groove 202.
As an example, can use but be not limited only to chemical vapour deposition technique that the low stress is formed in the annular groove 202
Polysilicon layer 204, specific method is：First, in the annular groove 202 and positioned at making silicon chip 201 bottom
The surface of the dielectric isolation layer 203 deposits low stress polysilicon (not shown)；Secondly, in the low stress polysilicon surface shape
Into photoresist layer (not shown), by the graphical photoresist layer of photoetching process, defined in the photoresist layer described
The figure of low stress polysilicon layer 204；Then, the low stress polysilicon is etched according to the patterned photoresist layer, i.e.,
Removal is located at the low stress polysilicon on the surface of the dielectric isolation layer 203 of making silicon chip 201 bottom, to be formed
State low stress polysilicon layer 204；Finally, the photoresist layer is removed.
As an example, in the annular groove 202 and positioned at the dielectric isolation layer 203 of making silicon chip 201 bottom
Surface deposition low stress polysilicon after, also including being doped to the low stress polysilicon the step of, doping type can be
N-type or p-type, dopant dose can be set according to actual needs, not limited here.
It should be noted that can also be using the technique system that the low stress polysilicon is directly deposited in the annular groove 202
The standby low stress polysilicon layer 204.
In step 4) in, S4 steps and the Figure 12 in Fig. 8 are referred to, photoetching, etching are located at making silicon chip 201 bottom
The dielectric isolation layer 203, in making silicon chip 201 bottom to form the first insulating barrier 104 and stop ring 101.
As an example, first, photoresist layer (not shown) is coated on the surface of the dielectric isolation layer 203；Secondly, by light
The graphical photoresist layer of carving technology, defines first insulating barrier 104 and the stop ring 101 in the photoresist layer
Figure；Then, the photoresist layer is etched according to the patterned photoresist layer, to form first insulating barrier 104
And the stop ring 101；Finally, the photoresist layer is removed.
As an example, the shape of the shading ring 101 for being formed can be circular, square ring-type or rectangular ring.
In step 5) in, the S5 steps in Fig. 8 are referred to, there is provided bottom electrode silicon chip 106, in the bottom electrode silicon chip 106
Lower surface forms bottom electrode 107, and forms the second insulating barrier 108, second insulation in the upper surface of bottom electrode silicon chip 106
Layer 108 is corresponding about 104 with first insulating barrier.
As an example, the bottom electrode silicon chip 106 can be any one silicon chip employed in existing semiconductor technology, it is preferable that
In the present embodiment, the bottom electrode silicon chip 106 can be but be not limited only to monocrystalline silicon piece.
As an example, can use but be not limited only to sputtering technology that the lower electricity is formed in the lower surface of the bottom electrode silicon chip 106
Pole 107, the bottom electrode 107 is used to realize that the electricity of the bottom electrode silicon chip 106 to be drawn, the material of the bottom electrode 107
Can be the electrode material used in existing integrated circuit and micromechanical process, it is preferable that in the present embodiment, the bottom electrode 107
Material can be but be not limited only to aluminium, chrome gold, titanium tungsten/gold or titanium tungsten/copper etc..
As an example, described the can be formed in the upper surface of the bottom electrode silicon chip 106 using deposit, photoetching, etching technics
Two insulating barriers 108；The material of second insulating barrier 108 can be the insulation commonly used in existing integrated circuit and micromechanical process
Material, the material of second insulating barrier 108 can be identical with the material of the stop ring 101 and first insulating barrier 104,
The material of i.e. described second insulating barrier 108 can be but be not limited only to silica, low stress SiNx etc..
In step 6) in, S6 steps and the Figure 13 in Fig. 8 are referred to, form solder layer on the surface of the second insulating barrier 108
109, and first insulating barrier 104 is welded together with second insulating barrier 108 by the solder layer 109.
As an example, the solder can be formed on the surface of second insulating barrier 108 using deposit, photoetching, etching technics
Layer 109；The solder layer 109 is used to realize that the frame 102 is connected with the bonding of the bottom electrode silicon chip 106, and realizes
Vacuum is realized in gap between the bottom electrode silicon chip 106 and the sound emission sensitive membrane 100, and the material of the solder layer 109 can
Think vacuum solder, such as aluminium germanium solder or gold solder.
As an example, first insulating barrier 104 can be passed through into institute with second insulating barrier 108 using vacuum soldering process
State solder layer 109 to weld together, the vacuum soldering process includes but are not limited to the vacuum welding of aluminium germanium, golden Vacuum Heat pressure welding
Connect.
As an example, the thickness sum of first insulating barrier 104, second insulating barrier 108 and the solder layer 109 is
Micron dimension.
In step 7) in, S7 steps and the Figure 14 in Fig. 8 are referred to, subsequently to form the making of frame region in correspondence
The upper surface of silicon chip 201 forms Top electrode 103.
As an example, first, sputtering to form metal electrode layer (not shown) in the upper surface of the making silicon chip 201；Secondly,
Coat photoresist layer (not shown) in the metal electrode layer surface, by the graphical photoresist layer of photoetching process, with
The figure of the Top electrode 103 is defined in the photoresist layer；Then, it is described according to the patterned photoresist layer etching
Metal electrode layer, to form the Top electrode 103, the Top electrode 103 is located at the upper surface of the frame region subsequently to be formed.
As an example, the material of the Top electrode 103 can be the electrode material used in existing integrated circuit and micromechanical process,
Preferably, in the present embodiment, the material of the Top electrode 103 can be but be not limited only to aluminium, chrome gold, titanium tungsten/gold or titanium tungsten/
Copper etc..
In step 8) in, S8 steps and the Figure 15 in Fig. 8, photoetching, the etching making silicon chip 201 are referred to, and remove
Positioned at the dielectric isolation layer 203 of the top of the low stress polysilicon layer 204, to form sound emission sensitive membrane 100 and frame
102。
As an example, photoresist layer (not shown) is coated in the upper surface of the making silicon chip 201 first, by photoetching process
The graphical photoresist layer, to define etched features in the photoresist layer, the etched features be located at it is described it is low should
The shape of the dielectric isolation layer 203 of the top of power polysilicon layer 204 and position are corresponding；Secondly, according to patterned described
The photoresist layer etching making silicon chip 201, using the dielectric isolation layer 203 as etching stop layer；Then, etching removal
Positioned at the dielectric isolation layer 203 of the top of the low stress polysilicon layer 204, the sound emission sensitive membrane 100 and institute are discharged
Frame 102 is stated, the low stress polysilicon layer 204 is and connects the sound emission sensitive membrane 100 with the branch of the frame 102
Support film 105；Finally, the photoresist layer is removed.
As an example, the shape of the sound emission sensitive membrane 100 for being formed can be circular, square or rectangle；The sound hair
The thickness for penetrating sensitive membrane 100 is the thickness of the making silicon chip 201.
In sum, the present invention provides a kind of silicone base capacitance acoustic emission sensor and preparation method thereof, the silicone base capacitance sound
Emission sensor includes：Sound emission sensitive membrane；Ring is stopped, positioned at the lower surface of the sound emission sensitive membrane；Frame, positioned at institute
Sound emission sensitive membrane periphery is stated, and is separated by certain spacing with the sound emission sensitive membrane；The upper surface of the frame is provided with electricity
Pole, lower surface is provided with the first insulating barrier；Support membrane, between the sound emission sensitive membrane and the frame, and inner side and institute
State sound emission sensitive membrane to be connected, outside is connected with the frame；Bottom electrode silicon chip, positioned at first insulating barrier, described
The lower section of support membrane, the sound emission sensitive membrane and the stop ring；The lower surface of the bottom electrode silicon chip is provided with bottom electrode, on
Surface is provided with the second insulating barrier；Second insulating barrier is corresponding up and down with first insulating barrier, and is welded on one by solder layer
Rise, vacuum chamber is formed between the sound emission sensitive membrane and the bottom electrode silicon chip.Support membrane deforms under atmospheric pressure effect,
So that stopping the upper surface that ring adheres on bottom electrode silicon chip so that acoustic emission signal can be preferably coupled in sound emission sensitive membrane；
The thickness for stopping ring is 100nm~1 μm, after ring being stopped under atmospheric pressure is acted on and adheres on the upper surface of bottom electrode silicon chip, sound hair
Penetrate and submicron/nanometer gap is formed between sensitive membrane and bottom electrode silicon chip, the sensitivity of sensor can be greatly enhanced；Manufacturing process
In, the spacing of sound emission sensitive membrane and bottom electrode silicon chip is micron dimension, and size is larger, reduces difficulty of processing, yield rate compared with
It is high.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art completed under without departing from disclosed spirit and technological thought all etc.
Effect modifications and changes, should be covered by claim of the invention.
Claims (11)
1. a kind of silicone base capacitance acoustic emission sensor, it is characterised in that the silicone base capacitance acoustic emission sensor includes：
Sound emission sensitive membrane；
Ring is stopped, positioned at the lower surface of the sound emission sensitive membrane；
Frame, positioned at sound emission sensitive membrane periphery, and is separated by certain spacing with the sound emission sensitive membrane；It is described
The upper surface of frame is provided with Top electrode, and lower surface is provided with the first insulating barrier；
Support membrane, between the sound emission sensitive membrane and the frame, and inner side is connected with the sound emission sensitive membrane
Connect, outside is connected with the frame；
Bottom electrode silicon chip, positioned at first insulating barrier, the support membrane, the sound emission sensitive membrane and the stop ring
Lower section, and be separated by certain spacing with the sound emission sensitive membrane；The lower surface of the bottom electrode silicon chip is provided with bottom electrode,
Upper surface is provided with the second insulating barrier；Second insulating barrier is corresponding up and down with first insulating barrier, and is welded by solder layer
Together, vacuum chamber is formed between the sound emission sensitive membrane and the bottom electrode silicon chip.
2. silicone base capacitance acoustic emission sensor according to claim 1, it is characterised in that：The shape of the sound emission sensitive membrane
It is circular, square or rectangle.
3. silicone base capacitance acoustic emission sensor according to claim 1, it is characterised in that：The material for stopping ring is insulation
Material.
4. silicone base capacitance acoustic emission sensor according to claim 1, it is characterised in that：It is described stop ring thickness be
100nm~1 μm.
5. silicone base capacitance acoustic emission sensor according to claim 1, it is characterised in that：The support membrane is acted in atmospheric pressure
Lower deformation, to cause that the stop ring adheres on the upper surface of the bottom electrode silicon chip, the maximum stress of the support membrane is less than
The fracture strength of the support membrane material.
6. silicone base capacitance acoustic emission sensor according to claim 1, it is characterised in that：The sound emission sensitive membrane with it is described
The spacing of bottom electrode silicon chip is micron dimension.
7. a kind of preparation method of silicone base capacitance acoustic emission sensor, it is characterised in that the preparation method includes：
1) provide and make silicon chip, annular groove is formed in the making silicon chip bottom；
2) dielectric isolation layer is formed in the making silicon chip bottom and the annular groove bottom, removal part is located at the ring
The dielectric isolation layer of connected in star bottom so that positioned at the dielectric isolation layer and the annular of the annular groove bottom
Recess sidewall is separated by certain spacing；
3) form low stress polysilicon layer in the annular groove, be dielectrically separated from described in low stress polysilicon layer covering
Layer；
4) photoetching, etching make silicon chip bottom shape positioned at the dielectric isolation layer of the making silicon chip bottom with described
Into the first insulating barrier and stop ring；
5) bottom electrode silicon chip is provided, bottom electrode is formed in the bottom electrode silicon chip lower surface, and on the bottom electrode silicon chip
Surface forms the second insulating barrier, and second insulating barrier is corresponding up and down with first insulating barrier；
6) solder layer is formed in second surface of insulating layer, and first insulating barrier is passed through with second insulating barrier
The solder layer welds together；
7) the making silicon chip upper surface that subsequently form frame region in correspondence forms Top electrode；
8) photoetching, etch the making silicon chip, and described being dielectrically separated from of removing above the low stress polysilicon layer
Layer, to form sound emission sensitive membrane and frame.
8. the preparation method of silicone base capacitance acoustic emission sensor according to claim 7, it is characterised in that：Step 2) in,
The thickness of the dielectric isolation layer formed in the making silicon chip bottom and the annular groove bottom is 100nm~1 μm.
9. the preparation method of silicone base capacitance acoustic emission sensor according to claim 7, it is characterised in that：Step 3) in,
After the low stress polysilicon layer is formed in the annular groove, also including being doped to the low stress polysilicon layer
The step of.
10. the preparation method of silicone base capacitance acoustic emission sensor according to claim 7, it is characterised in that：Described first
The thickness sum of insulating barrier, second insulating barrier and the solder layer is micron dimension.
The preparation method of 11. silicone base capacitance acoustic emission sensors according to claim 7, it is characterised in that：Step 8)
In, being shaped as the sound emission sensitive membrane of formation is circular, square or rectangle.
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