CN106816529A - A kind of application phase-change material as tunnel layer spin electric device - Google Patents
A kind of application phase-change material as tunnel layer spin electric device Download PDFInfo
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- CN106816529A CN106816529A CN201710047209.7A CN201710047209A CN106816529A CN 106816529 A CN106816529 A CN 106816529A CN 201710047209 A CN201710047209 A CN 201710047209A CN 106816529 A CN106816529 A CN 106816529A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000005286 illumination Methods 0.000 claims abstract description 37
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims abstract description 18
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
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- 230000005294 ferromagnetic effect Effects 0.000 claims description 40
- 230000005291 magnetic effect Effects 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 230000033228 biological regulation Effects 0.000 claims description 11
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 229910001291 heusler alloy Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
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- PIRUAZLFEUQMTG-UHFFFAOYSA-N lanthanum;oxomanganese;strontium Chemical compound [Sr].[La].[Mn]=O PIRUAZLFEUQMTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000863 Ferronickel Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
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- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 description 3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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Abstract
The present invention relates to a kind of application phase-change material as tunnel layer spin electric device, specially a kind of non-local spia injector part, its bottom is spin raceway groove, outside two ends above the spin raceway groove respectively deposit a common metal electrode, spin raceway groove upper center deposits two tunnel layers, and respectively deposits a feeromagnetic metal electrode on the tunneling layer；It is characterized in that：Described tunnel layer is the material that can be undergone phase transition in the case where temperature and illumination drive；And the device has further included temperature control modules or illumination control module.Phase transformation tunnel layer (such as vanadium dioxide) proposed by the present invention, can control resistance with temperature and illumination.Tunneling resistance can be by artificial adjustment in suitable interval, so as to improve the performance of spin electric device.
Description
【Technical field】
The present invention relates to a kind of application phase-change material as tunnel layer spin electric device, using the phase of tunnelling layer material
Become and control tunnel layer resistance, and then regulate and control the tunnelling probability of spinning current, finally realize the regulation and control to spin electric device performance.
The invention belongs to area of Spintronics.
【Background technology】
Spintronics mainly studies the characteristic and its control method of the spin free degree of electronics, by produce, regulation and control, it is defeated
Fortune and detection spin current realize the electronic device of a new generation.By development for many years, spin electric device attracted scientific circles and
The broad interest of industrial quarters, and have important application in multiple fields.
Spin electric device often contains high-resistance tunnel layer.The effect of tunnel layer can use quantum tunneling effect solution
Release.The potential barrier that insulating barrier could be formed with higher-energy is inserted in quantum mechanics, between conductor or semiconductor, but energy is relatively low
Electronics still has certain probability through potential barrier, and opposite side is reached from side, and the phenomenon is referred to as quantum tunneling effect, insulating barrier here
Also referred to as tunnel layer.The tunnelling probability of electronics is relevant with the resistance sizes of tunnel layer, and the size of tunnelling probability can direct shadow
Ring the performance of spin electric device.Tunnel layer resistance for example in spia injector part between ferromagnetic electrode and spin raceway groove can shadow
Ring the efficiency of spin injection；And the tunnel layer resistance in magnetic tunnel device between two ferromagnetic layers can influence tunnel magneto.
Current transfer in spin injection and magnetic tunnel device all can be by feeromagnetic metal.There is the electricity of different spin directions
Son has different charge velocities because the scattering strength in feeromagnetic metal is different, so as to the difference for having concentration and chemical potential.
The electric current of skewness of this electronics in two spin directions etc. is referred to as spin polarized current.The product of spin polarized current
Power that is raw, transporting and detect the signal that can all influence spin electric device.
Theory analysis shows, in non-local spia injector part, tunnel layer resistance between ferromagnetic electrode and spin raceway groove
Spin Injection Efficiency will be influenceed.By taking Graphene spin raceway groove as an example, ratio between spin signals and contact resistance and channel resistance
Relation is as shown in Figure 1.As can be seen that contact resistance only has and can just make within the specific limits the signal to have a higher value, and contact resistance
Size is relevant with tunnel layer resistance, so the control of tunnel layer resistance needs precision higher, selection and tunnelling to material
Thickness degree also has certain requirement；Similarly, in magnetic tunnel-junction, the resistance of tunnel layer can also influence dependency structure and device
Performance.It can be seen that the control of tunnel layer resistance is significant for device performance.
Material using constant resistivity has problems with as tunnel layer：
1. to make tunnel layer resistance in scope needed for device, it is necessary to screen resistivity suitable material, and in tunnelling
Precise thickness control during layer deposition, this improves selection and the difficulty for preparing.
2. the parameters of tunnel layer are fixed after the completion of device, it is impossible to regulated and controled when needed.
【The content of the invention】
First, goal of the invention：
Spin electric device limited performance caused by precise control is difficult to for the tunnel layer resistance mentioned in above-mentioned background
The problem of system, the present invention proposes a kind of spin electric device of application phase-change material as tunnel layer, it is possible to use phase-change material
(such as vanadium dioxide) is used as the adjustable tunnel layer of resistance.The characteristic of material phase transformation can be driven for temperature and illumination, by adding
Enter temperature or illumination control module, adjust the phase structure of tunnel layer, change tunnel layer resistance and by resistance regulation and control in suitable interval
It is interior, so as to realize the purpose of optimized device performance.
2nd, technical scheme：
The technical scheme is that realizing a kind of spin electric device of application phase-change material as tunnel layer.Specific
In device, by controlling temperature or additional illumination, the phase transformation of driving tunnel layer, and then regulate and control the resistance of tunnel layer, it is final to realize
The regulation and control of spin electric device performance.The present invention proposes two kinds of embodiments altogether.
Scheme one：Phase-change material (such as vanadium dioxide VO2) can be undergone phase transition with temperature change, produce the change of resistance
Change.It is VO shown in Fig. 22The curve that varies with temperature of resistance.Temperature at tunnel layer can be adjusted by temperature control, entered
And ensure tunnel layer resistance within the scope of required, it is ensured that the performance of device.
Scheme two：When additional illumination, phase-change material (such as vanadium dioxide VO2) can undergo phase transition, produce the change of resistance.
It is VO shown in Fig. 32Resistance with illumination variation curve.The intensity of illumination that tunnel layer is subject to can be regulated and controled by light source control,
And then ensure tunnel layer resistance within the scope of required, it is ensured that the performance of device.
A kind of application phase-change material of the present invention as tunnel layer spin electric device, specially a kind of non-local spin note
Enter device, its bottom is spin raceway groove, the outside two ends above the spin raceway groove respectively deposit a common metal electrode, spin
Raceway groove upper center deposits two tunnel layers, and respectively deposits a feeromagnetic metal electrode on the tunneling layer；It is characterized in that：It is described
Tunnel layer be the material that can be undergone phase transition in the case where temperature and illumination drive；And the device has further included temperature control mould
Block or illumination control module.
A kind of application phase-change material of the present invention as tunnel layer spin electric device, specially a kind of magnetic tunnel-junction device
Part, its bottom is common metal electrode, ferromagnetic reference, tunnel layer and ferromagnetic free layer is sequentially depositing thereon, and go up most
End one common metal electrode of deposition；It is characterized in that：Described tunnel layer is phase can occur in the case where temperature and illumination drive
The material of change；And the device has further included temperature control modules or illumination control module.
Wherein, described temperature control modules, are the prefabricated grooves in a substrate, and temperature control modules are inserted into it
In；Described temperature control modules are located at immediately below tunnel layer, and the wire of module is drawn by the space that groove is reserved, and is connected to
In total moisture content control unit, so as to realize temperature adjustment.
Wherein, described illumination control module can be the light source for adjusting brightness, and being positioned over the side of tunnel layer (can be
But it is not limited to the position in schematic diagram), and tunnelling layer surface is normally incident in as far as possible, the wire of light source is connected to total illumination control
On unit processed, so as to realize brightness regulation.
The spin raceway groove, there is the material of certain spin diffusion length including metal, semiconductor, Graphene etc..
One kind in the common metal electrode, including golden (Au), platinum (Pt), copper (Cu) or other non-ferromagnetic metal materials
Or it is various.
The ferromagnetic electrode, including barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB), nickel
One or more in iron (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy or other ferromagnetic materials.
The tunnel layer, including the various materials that can be undergone phase transition in the case where temperature and illumination drive, typical case such as titanium dioxide
Vanadium (VO2)。
The ferromagnetic reference, including barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB),
One or more in ferronickel (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy or other ferromagnetic materials.
The ferromagnetic free layer, including cobalt (Co), ferro-cobalt (CoFe), ferro-cobalt boron (CoFeB), heusler alloy or other iron
One or more in magnetic material.
The coercivity of ferromagnetic electrode directly determines the difficulty or ease of the direction of magnetization upset of electrode, and this is in spin electric device
There is important application.Electrode material is different or size difference can make it have different coercivitys.Under certain external magnetic field, coercive
The direction of magnetization of the small electrode of power first overturns, such that it is able to realize two equal states or opposite of the direction of magnetization of ferromagnetic electrode
Conversion between state.Non-local spin injecting structure and magnetic tunnel-junction can in this way, using external magnetic field strength
Change, realize the conversion in opposite magnetization direction between ferromagnetic electrode or ferromagnetic layer.In non-local spin injecting structure, for
Position between two different electrodes of coercivity does not have strict regulations, can be that big coercivity electrode side is passed through electric current,
Opposite side measures voltage；Can also be that small coercivity electrode side is passed through electric current in opposite side measurement voltage.Similarly, in magnetic channel
In knot, there is no strict regulations for the position of ferromagnetic reference and ferromagnetic free layer, you being that ferromagnetic reference is in bottom
Electrode top, then ferromagnetic free layer is below apex electrode；Can also be ferromagnetic free layer above bottom electrode, then ferromagnetic ginseng
Layer is examined below apex electrode.
Wherein, a kind of application phase-change material as tunnel layer spin electric device, a kind of specially non-local spin note
Enter device, prepared in substrate spin raceway groove using methods such as magnetron sputtering, electron-beam evaporation or mechanical strippings；Then
By electron-beam evaporation tunnel layer, and ferromagnetic electrode is just plated by magnetron sputtering on the tunneling layer, finally by electron beam
Evaporation deposits Au electrodes with speed on raceway groove., it is necessary to using photoetching, etching, embedding, deposition etc. in the preparation process of device
Method realizes the graphical of device, and adds temperature or illumination control module in relevant position, is finally completed the preparation of device.If
For control module is temperature control modules, then should in substrate prefabricated groove, and temperature control modules are inserted wherein.
Wherein, a kind of application phase-change material as tunnel layer spin electric device, specially a kind of magnetic tunnel device,
By the methods such as magnetron sputtering or electron-beam evaporation be sequentially depositing on substrate bottom electrode, ferromagnetic reference, tunnel layer,
Ferromagnetic free layer and apex electrode.In magnetic tunnel-junction preparation process, need to be realized using methods such as photoetching, etching, embedding, depositions
Device it is graphical, while relevant position add temperature or illumination control module, so as to complete the preparation of device.If control
Module is temperature control modules, then should in substrate prefabricated groove, and temperature control modules are inserted wherein.
3rd, advantage and effect:
Phase transformation tunnel layer (such as vanadium dioxide) proposed by the present invention, can control resistance with temperature and illumination.Tunneling resistance
Can be by artificial adjustment in suitable interval, so as to improve the performance of spin electric device.
【Brief description of the drawings】
Fig. 1 is the relation of spin signals and contact resistance/spin values of channel resistance in the non-local spin injection of Graphene
Schematic diagram.
Fig. 2 is VO2Resistance and temperature relation schematic diagram.
Fig. 3 is VO2Resistance and intensity of illumination relation schematic diagram.
Fig. 4 is the schematic diagram of the non-local spin injecting structure of temperature adjusting.
Fig. 5 is the schematic diagram of the non-local spin injecting structure of light regulating and controlling illumination.
Fig. 6 is the structural representation of magnetic tunnel-junction.
Fig. 7 is the structural representation of the magnetic tunnel-junction of temperature adjusting.
Fig. 8 is the structural representation of the magnetic tunnel-junction of light regulating and controlling illumination.
Label declaration in figure：
40 70 substrates
41 51 spin raceway grooves
42 43 52 53 common metal electrodes
44 45 54 55 63 73 83 tunnel layers
46 47 56 57 feeromagnetic metal electrodes
48 49 76 temperature control modules
58 59 86 illumination control modules
61 71 81 apex electrodes
62 72 82 ferromagnetic free layers
64 74 84 ferromagnetic references
65 75 85 bottom electrodes
【Specific embodiment】
The present invention proposes the tunnel layer that available phase transformation regulates and controls resistance.In non-local spin injecting structure instantiation,
By regulating and controlling tunnel layer resistance, Spin Injection Efficiency is improve；In magnetic tunnel-junction instantiation, by regulating and controlling tunnel layer electricity
Resistance, improves tunnel magneto.
Referring to the drawings, substantive distinguishing features of the invention are further illustrated.Accompanying drawing is schematic diagram, each function being directed to
Layer or the non-actual size of thickness in region, the non-actual value of distance between functional areas, the electric current and magnitude of voltage in mode of operation are also non-
Actual value.
Detailed exemplary embodiment is disclosed that, its specific CONSTRUCTED SPECIFICATION and function detail are only to represent description
The purpose of example embodiment, therefore, it can implement the present invention in many selectable forms, and the present invention not it should be understood that
It is all changes, the equivalence that are limited only to the example embodiment for herein proposing, but should cover fall within the scope of the present invention
Thing and refill.
Fig. 4 show the structural representation of the non-local spia injector part of temperature adjusting.Structure includes：Substrate 40；
Spin raceway groove 41, such as Graphene；Common metal electrode 42,43, such as golden (Au)；Using the tunnel layer 44,45 of phase-change material, such as
VO2；Feeromagnetic metal electrode 46,47, such as FeCo alloy；Temperature control modules 48,49.Temperature control modules 48,49 are respectively in base
In two grooves in bottom 40, and the underface of 44 tunnel layers 44 and tunnel layer 45 is respectively at, the He of tunnel layer 44 can be adjusted
The temperature of tunnel layer 45.Common metal electrode 42 and feeromagnetic metal electrode 46 are other end of by constant-current source control input electric current
Detection voltage at feeromagnetic metal electrode 47 and common metal electrode 43.Because ferromagnetic electrode is to the electricity of the electronics of different spin directions
Lead variant, cause in feeromagnetic metal electrode 46 two kinds of electron injection speed of spin direction when by electric current, so that
Spin polarization is formed in feeromagnetic metal base part.Because two concentration of the electronics of spin direction are different, therefore both chemistry
Gesture is also.The two different chemical potentials are by the drift in the raceway groove that spins and are diffused in below feeromagnetic metal electrode 47 still
Certain difference is kept, is detected by feeromagnetic metal, be embodied between feeromagnetic metal electrode 47 and common metal electrode 43
There is electrical potential difference.The ratio of the input current of the electrical potential difference and feeromagnetic metal electrode 46 is defined as R.Changing external magnetic field can use two
The direction of magnetization of ferromagnetic electrode is in parallel or antiparallel state, and measurement obtains different R, and spin signals are then defined as Δ R/R.
Theory analysis shows that, when the contact resistance that tunnel layer is obtained is in certain interval, spin signals Δ R/R can reach maximum
Value, realizes the optimization of device.And two temperature control modules 48,49 regulate and control two phase transformations of tunnel layer, tunnel layer can be made
Resistance to be in this interval, it is ensured that device has the spin signals of maximum all the time.
Fig. 5 show the structural representation of the non-local spia injector part of light regulating and controlling illumination.Concrete structure includes：It is spin
Raceway groove 51, such as Graphene；Common metal electrode 52,53, such as golden (Au)；Using the tunnel layer 54,55 of phase-change material, such as titanium dioxide
Vanadium (VO2)；Feeromagnetic metal electrode 56,57, such as FeCo alloy；Illumination control module 58,59.Two illumination control modules 58,59
The light for sending focuses on the side of tunnel layer 54 and tunnel layer 55 respectively, and the illumination of regulation tunnel layer 54 and tunnel layer 55 is strong
Degree.Common metal electrode 52 and feeromagnetic metal electrode 56 are electric in other end of feeromagnetic metal by constant-current source control input electric current
Detection voltage at pole 57 and common metal electrode 53.According to temperature control identical principle, when illumination control module adjust tunnel
Wearing layer intensity of illumination makes the resistance of tunnel layer be in when in suitable interval, and device can be made to have the spin signals of maximum.
Fig. 6 is the structural representation of magnetic tunnel-junction.Including：The apex electrode 61 of common metal composition, such as golden (Au)；It is ferromagnetic
Free layer 62, such as cobalt (Co)；Using the tunnel layer 63 of phase-change material, such as vanadium dioxide (VO2)；Ferromagnetic reference 64, such as ferro-cobalt
Boron (CoFeB)；The bottom electrode 65 of common metal composition, such as golden (Au).
Fig. 7 is the structural representation of the magnetic tunnel device of temperature adjusting, has used magnetic tunneling junction shown in Fig. 6.Structure
Including：Substrate 70；The apex electrode 71 of common metal composition, such as golden (Au)；Ferromagnetic free layer 72, such as cobalt (Co)；Use phase transformation
The tunnel layer 73 of material, such as vanadium dioxide (VO2)；Ferromagnetic reference 74, such as ferro-cobalt boron (CoFeB)；The bottom of common metal composition
Termination electrode 75, such as golden (Au).Temperature control modules 76 are in the groove of substrate 70, and the underface in device, for controlling
The temperature of tunnel layer 73.Constant-current source control electric current is injected from apex electrode 71, is flowed out at bottom electrode 75, voltmeter measurement two
The voltage at end.When ferromagnetic free layer is identical with the reference layer direction of magnetization, voltage and current ratio R is obtained；Change the bars such as external magnetic field
During part, the direction of magnetization of ferromagnetic reference is constant, and the direction of magnetization of ferromagnetic free layer produces upset, between ferromagnetic reference
When relative orientation turns into antiparallel, different R are obtained, knots modification is Δ R, tunnels through magnetic resistance and is defined as Δ R/R.By to tunnelling
The regulation and control of the temperature of layer 73, change tunnel layer resistance, so as to regulate and control electron tunneling probability, can make the absolute value of signal delta R/R
Maximum is reached, the optimization of device performance is realized.
Fig. 8 is the structural representation of the magnetic tunnel-junction of light regulating and controlling illumination, has used magnetic tunneling junction shown in Fig. 6.Structure includes：
The apex electrode 81 of common metal composition, such as golden (Au)；Ferromagnetic free layer 82, such as cobalt (Co)；Use the tunnel layer of phase-change material
83, such as vanadium dioxide (VO2)；Ferromagnetic reference 84, such as ferro-cobalt boron (CoFeB)；The bottom electrode 85 of common metal composition, such as gold
(Au).The light focusing that illumination control module 86 sends adjusts the intensity of illumination suffered by it on tunnel layer 83.By to illumination
The regulation of intensity, using the magnetic tunnel-junction identical principle with temperature adjusting, can be such that the absolute value of signal delta R/R reaches most
Greatly, the optimization of device performance is realized.
Claims (10)
1. a kind of application phase-change material as tunnel layer spin electric device, specially a kind of non-local spia injector part,
Its bottom is spin raceway groove, and the outside two ends above the spin raceway groove respectively deposit a common metal electrode, on spin raceway groove
Side middle part two tunnel layers of deposition, and a feeromagnetic metal electrode is respectively deposited on the tunneling layer；It is characterized in that：Described tunnelling
Layer is the material that can be undergone phase transition in the case where temperature and illumination drive；And the device has further included temperature control modules or light
According to control module.
2. a kind of application phase-change material as tunnel layer spin electric device, specially a kind of magnetic tunnel device, its most under
It is common metal electrode to hold, and ferromagnetic reference, tunnel layer and ferromagnetic free layer is sequentially depositing thereon, and deposit one in the top
Common metal electrode；It is characterized in that：Described tunnel layer is the material that can be undergone phase transition in the case where temperature and illumination drive；And
The device has further included temperature control modules or illumination control module.
3. a kind of application phase-change material according to claim 1 and 2 as tunnel layer spin electric device, its feature exists
In：Described temperature control modules, are the prefabricated grooves in a substrate, and temperature control modules are inserted wherein；Described temperature
Degree control module is located at immediately below tunnel layer, and the wire of module is drawn by the space that groove is reserved, and is connected to total moisture content control
On unit, so as to realize temperature adjustment.
4. a kind of application phase-change material according to claim 1 and 2 as tunnel layer spin electric device, its feature exists
In：Described illumination control module can be the light source for adjusting brightness, be positioned over the side of tunnel layer, and vertical incidence as far as possible
In tunnelling layer surface, the wire of light source is connected on total lighting control unit, so as to realize brightness regulation.
5. a kind of application phase-change material according to claim 1 as tunnel layer spin electric device, it is characterised in that：
The spin raceway groove, there is the material of certain spin diffusion length including metal, semiconductor, Graphene etc..
6. a kind of application phase-change material according to claim 1 as tunnel layer spin electric device, it is characterised in that：
The common metal electrode, one or more in including but not limited to golden (Au), platinum (Pt), copper (Cu).
7. a kind of application phase-change material according to claim 1 as tunnel layer spin electric device, it is characterised in that：
The feeromagnetic metal electrode, including but not limited to barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron
(CoFeB), one or more in ferronickel (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy.
8. a kind of application phase-change material according to claim 1 and 2 as tunnel layer spin electric device, its feature exists
In：The tunnel layer includes but is not limited to vanadium dioxide (VO2)。
9. a kind of application phase-change material according to claim 2 as tunnel layer spin electric device, it is characterised in that：
The ferromagnetic reference, including but not limited to barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB),
One or more in ferronickel (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy.
10. a kind of application phase-change material according to claim 2 as tunnel layer spin electric device, its feature exists
In：In the ferromagnetic free layer, including but not limited to cobalt (Co), ferro-cobalt (CoFe), ferro-cobalt boron (CoFeB), heusler alloy
One or more.
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| CN111883641B (en) * | 2020-07-22 | 2022-01-28 | 北京大学 | Room temperature heat-induced spin polarization current source and implementation method thereof |
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