CN106816529B - A kind of spin electric device using phase-change material as tunnel layer - Google Patents
A kind of spin electric device using phase-change material as tunnel layer Download PDFInfo
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- CN106816529B CN106816529B CN201710047209.7A CN201710047209A CN106816529B CN 106816529 B CN106816529 B CN 106816529B CN 201710047209 A CN201710047209 A CN 201710047209A CN 106816529 B CN106816529 B CN 106816529B
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- 239000012782 phase change material Substances 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000005286 illumination Methods 0.000 claims abstract description 37
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000005641 tunneling Effects 0.000 claims abstract description 11
- 230000009466 transformation Effects 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims abstract description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 40
- 230000005291 magnetic effect Effects 0.000 claims description 24
- 230000033228 biological regulation Effects 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
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- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- AJCDFVKYMIUXCR-UHFFFAOYSA-N oxobarium;oxo(oxoferriooxy)iron Chemical compound [Ba]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O.O=[Fe]O[Fe]=O AJCDFVKYMIUXCR-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 229910001291 heusler alloy Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
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- 239000010949 copper Substances 0.000 claims description 4
- PIRUAZLFEUQMTG-UHFFFAOYSA-N lanthanum;oxomanganese;strontium Chemical compound [Sr].[La].[Mn]=O PIRUAZLFEUQMTG-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 15
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- 230000005415 magnetization Effects 0.000 description 8
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 239000000243 solution Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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Abstract
The present invention relates to a kind of spin electric devices using phase-change material as tunnel layer, specially a kind of non-local spia injector part, its bottom is spin channel, outside both ends above the spin channel respectively deposit a common metal electrode, the channel upper center that spins deposits two tunnel layers, and respectively deposits a feeromagnetic metal electrode on the tunneling layer；It is characterized by: the tunnel layer is the material that can be undergone phase transition at temperature and illumination driving；And the device further comprises having temperature control modules or illumination control module.Phase transformation tunnel layer (such as vanadium dioxide) proposed by the present invention can use temperature and light control resistance.Tunneling resistance can be by artificial adjustment in suitable interval, to improve the performance of spin electric device.
Description
[technical field]
The present invention relates to a kind of spin electric devices using phase-change material as tunnel layer, utilize the phase of tunnelling layer material
Become control tunnel layer resistance, and then regulates and controls the tunnelling probability of spinning current, the final regulation realized to spin electric device performance.
The invention belongs to area of Spintronics.
[background technique]
Spintronics mainly studies the characteristic and its control method of the spin freedom degree of electronics, by generation, regulation, defeated
Fortune and detection spin current realize the electronic device of a new generation.By the development of many years, spin electric device attracted scientific circles and
The broad interest of industry, and have important application in multiple fields.
Spin electric device often contains high-resistance tunnel layer.The effect of tunnel layer can use quantum tunneling effect solution
It releases.Being inserted into insulating layer in quantum mechanics, between conductor or semiconductor could be formed with the potential barrier of higher-energy, but energy is lower
Electronics still has certain probability to pass through potential barrier, reaches the other side from side, which is known as quantum tunneling effect, insulating layer here
Also referred to as tunnel layer.The tunnelling probability of electronics and the resistance sizes of tunnel layer are related, and the size of tunnelling probability can direct shadow
Ring the performance of spin electric device.Such as the tunnel layer resistance in spia injector part between ferromagnetic electrode and spin channel can shadow
Ring the efficiency of spin injection；And the tunnel layer resistance in magnetic tunnel device between two ferromagnetic layers will affect tunnel magneto.
Current transfer in spin injection and magnetic tunnel device can all pass through feeromagnetic metal.There is the electricity of different spin directions
Son has different charge velocities because the scattering strength in feeromagnetic metal is different, to there is the difference of concentration and chemical potential.
The electric current of this electronics being unevenly distributed in two spin directions etc. is known as spin polarized current.The production of spin polarized current
Life transports and detects the power that can all influence the signal of spin electric device.
Theoretical analysis shows that in non-local spia injector part, tunnel layer resistance between ferromagnetic electrode and spin channel
It will affect Spin Injection Efficiency.By taking graphene spins channel as an example, ratio between spin signals and contact resistance and channel resistance
Relationship is as shown in Figure 1.As can be seen that contact resistance only can just make signal have the larger value in a certain range, and contact resistance
Size is related with tunnel layer resistance, so the control of tunnel layer resistance needs higher precision, the selection and tunnelling to material
Thickness degree also has certain requirement；Similarly, in magnetic tunnel-junction, the resistance of tunnel layer also will affect dependency structure and device
Performance.It can be seen that the control of tunnel layer resistance is of great significance for device performance.
There are following problems as tunnel layer using the material of constant resistivity:
1. being to need to screen resistivity suitable material, and in tunnelling in range needed for making tunnel layer resistance be in device
Precise thickness control when layer deposition, this improves the difficulty of selection and preparation.
2. the parameters of tunnel layer are fixed after the completion of device, can not be regulated and controled when needed.
[summary of the invention]
One, goal of the invention:
Spin electric device limited performance caused by being difficult to control accurately for the tunnel layer resistance mentioned in above-mentioned background
The problem of processed, the present invention propose a kind of spin electric device using phase-change material as tunnel layer, phase-change material can be used
(such as vanadium dioxide) is used as the adjustable tunnel layer of resistance.The characteristic that material phase transformation can be driven for temperature and illumination, by adding
Enter temperature or illumination control module, adjust the phase structure of tunnel layer, change tunnel layer resistance and regulates and controls resistance in suitable interval
It is interior, to realize the purpose of optimized device performance.
Two, technical solution:
The technical scheme is that realizing a kind of spin electric device using phase-change material as tunnel layer.Specific
In device, by control temperature or additional illumination, the phase transformation of tunnel layer is driven, and then regulate and control the resistance value of tunnel layer, it is final to realize
The regulation of spin electric device performance.The present invention proposes two kinds of embodiments altogether.
Scheme one: phase-change material (such as vanadium dioxide VO2) can be undergone phase transition with temperature change, generate the change of resistance
Change.It is VO shown in Fig. 22The curve that varies with temperature of resistance.It can be controlled by temperature, adjust the temperature at tunnel layer, into
And guarantee tunnel layer resistance within the scope of required, guarantee the performance of device.
Scheme two: when additional illumination, phase-change material (such as vanadium dioxide VO2) can undergo phase transition, generate the variation of resistance.
It is VO shown in Fig. 32Resistance with illumination variation curve.The intensity of illumination that tunnel layer is subject to can be regulated and controled by light source control,
And then guarantee that tunnel layer resistance within the scope of required, guarantees the performance of device.
A kind of spin electric device using phase-change material as tunnel layer of the present invention, specially a kind of non-local spin note
Enter device, bottom is spin channel, and the outside both ends above the spin channel respectively deposit a common metal electrode, is spinned
Channel upper center deposits two tunnel layers, and respectively deposits a feeromagnetic metal electrode on the tunneling layer；It is characterized by: described
Tunnel layer be can at temperature and illumination driving the material that undergo phase transition；And the device further comprises having temperature to control mould
Block or illumination control module.
A kind of spin electric device using phase-change material as tunnel layer of the present invention, specially a kind of magnetic tunnel-junction device
Part, bottom are common metal electrode, are sequentially depositing ferromagnetic reference, tunnel layer and ferromagnetic free layer thereon, and most upper
End one common metal electrode of deposition；It is characterized by: the tunnel layer is that phase can occur at temperature and illumination driving
The material of change；And the device further comprises having temperature control modules or illumination control module.
Wherein, the temperature control modules are the prefabricated grooves in a substrate, and temperature control modules are placed in it
In；The temperature control modules are located at immediately below tunnel layer, and the conducting wire of module is drawn by the space that groove is reserved, and are connected to
In total moisture content control unit, to realize that temperature is adjusted.
Wherein, the illumination control module is the light source of adjustable brightness, and the side for being placed in tunnel layer (can be
But it is not limited to the position in schematic diagram), and it is normally incident in tunnelling layer surface as far as possible, the conducting wire of light source is connected to total illumination control
On unit processed, to realize brightness regulation.
The spin channel, there is the substance of certain spin diffusion length including metal, semiconductor, graphene etc..
One of described common metal electrode, including gold (Au), platinum (Pt), copper (Cu) or other non-ferromagnetic metal materials
Or it is a variety of.
The ferromagnetic electrode, including barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB), nickel
One of iron (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy or other ferromagnetic materials are a variety of.
The tunnel layer, it is typical such as titanium dioxide including the various materials that can be undergone phase transition at temperature and illumination driving
Vanadium (VO2)。
The ferromagnetic reference, including barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB),
One of ferronickel (NiFe), lanthanum strontium manganese oxygen (LSMO), heusler alloy or other ferromagnetic materials are a variety of.
The ferromagnetic free layer, including cobalt (Co), ferro-cobalt (CoFe), ferro-cobalt boron (CoFeB), heusler alloy or other iron
One of magnetic material is a variety of.
The coercivity of ferromagnetic electrode directly determines the difficulty or ease of the direction of magnetization overturning of electrode, this is in spin electric device
There is important application.Electrode material is different or size difference can make it have different coercivitys.Under certain external magnetic field, coercive
The direction of magnetization of the small electrode of power is first overturn, so as to realize the same state of the direction of magnetization of two ferromagnetic electrodes or opposite
Conversion between state.Non-local spin injecting structure and magnetic tunnel-junction can utilize external magnetic field strength in this way
Variation, realize the conversion in opposite magnetization direction between ferromagnetic electrode or ferromagnetic layer.In non-local spin injecting structure, for
Position between two different electrodes of coercivity does not have strict regulations, can be big coercivity electrode side and is passed through electric current,
The other side measures voltage；It is also possible to small coercivity electrode side and is passed through electric current in other side measurement voltage.Similarly, in magnetic channel
In knot, there is no strict regulations for the position of ferromagnetic reference and ferromagnetic free layer, it can be ferromagnetic reference in bottom end
Above electrode, then ferromagnetic free layer is below apex electrode；It is also possible to ferromagnetic free layer above bottom electrode, then ferromagnetic ginseng
Layer is examined below apex electrode.
Wherein, a kind of spin electric device using phase-change material as tunnel layer, specially a kind of non-local spin note
Enter device, is prepared spin channel in substrate using the methods of magnetron sputtering, electron beam evaporation deposition or mechanical stripping；Then
Tunnel layer is deposited by electron beam evaporation, and ferromagnetic electrode is just plated by magnetron sputtering on the tunneling layer, finally by electron beam
Evaporation deposits Au electrode with rate on channel.In the preparation process of device, need using photoetching, etching, embedding, deposition etc.
Method realizes the graphical of device, and temperature or illumination control module is added in corresponding position, is finally completed the preparation of device.If
Be temperature control modules for control module, then should in substrate prefabricated groove, and by temperature control modules merging wherein.
Wherein, a kind of spin electric device using phase-change material as tunnel layer, specially a kind of magnetic tunnel device,
The methods of deposited by magnetron sputtering or electron beam evaporation be sequentially depositing on substrate bottom electrode, ferromagnetic reference, tunnel layer,
Ferromagnetic free layer and apex electrode.In magnetic tunnel-junction preparation process, it need to be realized using the methods of photoetching, etching, embedding, deposition
Device it is graphical, while temperature or illumination control module is added in corresponding position, to complete the preparation of device.If control
Module is temperature control modules, then should in substrate prefabricated groove, and by temperature control modules merging wherein.
Three, advantage and effect:
Phase transformation tunnel layer (such as vanadium dioxide) proposed by the present invention can use temperature and light control resistance.Tunneling resistance
It can be by artificial adjustment in suitable interval, to improve the performance of spin electric device.
[Detailed description of the invention]
Fig. 1 is spin signals and contact resistance/spin values of channel resistance relationship in the non-local spin injection of graphene
Schematic diagram.
Fig. 2 is VO2Resistance and temperature relation schematic diagram.
Fig. 3 is VO2Resistance and intensity of illumination relation schematic diagram.
Fig. 4 is the schematic diagram of the non-local spin injecting structure of temperature regulation.
Fig. 5 is the schematic diagram of the non-local spin injecting structure of illumination regulation.
Fig. 6 is the structural schematic diagram of magnetic tunnel-junction.
Fig. 7 is the structural schematic diagram of the magnetic tunnel-junction of temperature regulation.
Fig. 8 is the structural schematic diagram of the magnetic tunnel-junction of illumination regulation.
Figure label explanation:
40 70 substrates
41 51 spin channels
42 43 52 53 common metal electrodes
44 45 54 55 63 73 83 tunnel layers
46 47 56 57 feeromagnetic metal electrodes
48 49 76 temperature control modules
58 59 86 illumination control modules
61 71 81 apex electrodes
62 72 82 ferromagnetic free layers
64 74 84 ferromagnetic references
65 75 85 bottom electrodes
[specific embodiment]
The invention proposes the tunnel layers of available phase transformation regulation resistance.In non-local spin injecting structure specific example,
By regulating and controlling tunnel layer resistance, Spin Injection Efficiency is improved；In magnetic tunnel-junction specific example, pass through regulation tunnel layer electricity
Resistance, improves tunnel magneto.
Referring to attached drawing, substantive distinguishing features of the invention are further illustrated.Attached drawing is schematic diagram, each function being directed to
The non-actual size of thickness in layer or region, the non-actual value of distance between functional areas, electric current and voltage value in operating mode nor
Actual value.
Detailed exemplary embodiment is disclosed, specific CONSTRUCTED SPECIFICATION and function detail are only to indicate to describe
The purpose of example embodiment, therefore, can by it is many it is selectable in the form of implement the present invention, and the present invention not it should be understood that
To be limited only to the example embodiment herein proposed, but all changes fallen within the scope of the present invention, equivalence should be covered
Object and refill.
Fig. 4 show the structural schematic diagram of the non-local spia injector part of temperature regulation.Structure includes: substrate 40；
Spin channel 41, such as graphene；Common metal electrode 42,43, such as golden (Au)；Using the tunnel layer 44,45 of phase-change material, such as
VO2；Feeromagnetic metal electrode 46,47, such as FeCo alloy；Temperature control modules 48,49.Temperature control modules 48,49 are respectively in base
In two grooves in bottom 40, and it is respectively at the underface of 44 tunnel layers 44 and tunnel layer 45, adjustable 44 He of tunnel layer
The temperature of tunnel layer 45.Common metal electrode 42 and feeromagnetic metal electrode 46 control input current by constant-current source, other end of
Voltage is detected at feeromagnetic metal electrode 47 and common metal electrode 43.Since ferromagnetic electrode is to the electricity of the electronics of different spin directions
It leads variant, the electron injection rate of two kinds of spin directions when passing through electric current in feeromagnetic metal electrode 46 is caused to differ, thus
Spin polarization is formed in feeromagnetic metal base part.Because the concentration of the electronics of two spin directions is different, therefore the chemistry of the two
Gesture also differs.The drift and be diffused in below feeromagnetic metal electrode 47 still that the two different chemical potentials are passed through in spin channel
Certain difference is kept, is detected by feeromagnetic metal, is embodied between feeromagnetic metal electrode 47 and common metal electrode 43
There is potential difference.The ratio of the input current of the potential difference and feeromagnetic metal electrode 46 is defined as R.Changing external magnetic field can be used two
The direction of magnetization of ferromagnetic electrode is in parallel or antiparallel state, and measurement obtains different R, and spin signals are then defined as Δ R/R.
Theoretical analysis shows that spin signals Δ R/R can achieve maximum when the contact resistance that tunnel layer obtains is in certain section
Value, realizes the optimization of device.And two temperature control modules 48,49 regulate and control the phase transformation of two tunnel layers, can make tunnel layer
Resistance be in this section, guarantee that device has maximum spin signals always.
Fig. 5 show the structural schematic diagram of the non-local spia injector part of illumination regulation.Specific structure includes: for spin
Channel 51, such as graphene；Common metal electrode 52,53, such as golden (Au)；Using the tunnel layer 54,55 of phase-change material, such as titanium dioxide
Vanadium (VO2)；Feeromagnetic metal electrode 56,57, such as FeCo alloy；Illumination control module 58,59.Two illumination control modules 58,59
The light of sending focuses on the side of tunnel layer 54 and tunnel layer 55 respectively, and the illumination for adjusting tunnel layer 54 and tunnel layer 55 is strong
Degree.Common metal electrode 52 and feeromagnetic metal electrode 56 control input current by constant-current source, in other end of feeromagnetic metal electricity
Voltage is detected at pole 57 and common metal electrode 53.Identical principle is controlled according to temperature, when illumination control module adjusts tunnel
When wearing layer intensity of illumination is in the resistance of tunnel layer in suitable interval, device can be made there are maximum spin signals.
Fig. 6 is the structural schematic diagram of magnetic tunnel-junction.It include: the apex electrode 61 of common metal composition, such as golden (Au)；It is ferromagnetic
Free layer 62, such as cobalt (Co)；Using the tunnel layer 63 of phase-change material, such as vanadium dioxide (VO2)；Ferromagnetic reference 64, such as ferro-cobalt
Boron (CoFeB)；The bottom electrode 65 of common metal composition, such as golden (Au).
Fig. 7 is the structural schematic diagram of the magnetic tunnel device of temperature regulation, has used magnetic tunneling junction shown in Fig. 6.Structure
It include: substrate 70；The apex electrode 71 of common metal composition, such as golden (Au)；Ferromagnetic free layer 72, such as cobalt (Co)；Use phase transformation
The tunnel layer 73 of material, such as vanadium dioxide (VO2)；Ferromagnetic reference 74, such as ferro-cobalt boron (CoFeB)；The bottom of common metal composition
Termination electrode 75, such as golden (Au).Temperature control modules 76 are in the underface of device in the groove of substrate 70, for controlling
The temperature of tunnel layer 73.Constant-current source control electric current injects from apex electrode 71, flows out at bottom electrode 75, voltmeter measurement two
The voltage at end.When ferromagnetic free layer is identical with the reference layer direction of magnetization, voltage and current ratio R is obtained；Change the items such as external magnetic field
When part, the direction of magnetization of ferromagnetic reference is constant, and the direction of magnetization of ferromagnetic free layer generates overturning, between ferromagnetic reference
When relative orientation becomes antiparallel, different R is obtained, knots modification is Δ R, tunnels through magnetic resistance and is defined as Δ R/R.By to tunnelling
The regulation of the temperature of layer 73, the absolute value of signal delta R/R can be made by changing tunnel layer resistance to regulate and control electron tunneling probability
Reach maximum, realizes the optimization of device performance.
Fig. 8 is the structural schematic diagram of the magnetic tunnel-junction of illumination regulation, has used magnetic tunneling junction shown in Fig. 6.Structure includes:
The apex electrode 81 of common metal composition, such as golden (Au)；Ferromagnetic free layer 82, such as cobalt (Co)；Use the tunnel layer of phase-change material
83, such as vanadium dioxide (VO2)；Ferromagnetic reference 84, such as ferro-cobalt boron (CoFeB)；The bottom electrode 85 of common metal composition, such as gold
(Au).The light focusing that illumination control module 86 issues adjusts the intensity of illumination suffered by it on tunnel layer 83.By to illumination
The adjusting of intensity can be such that the absolute value of signal delta R/R reaches most using principle identical with the magnetic tunnel-junction that temperature regulates and controls
Greatly, the optimization of device performance is realized.
Claims (9)
1. a kind of spin electric device using phase-change material as tunnel layer, specially a kind of non-local spia injector part,
Its bottom is spin channel, and the outside both ends above the spin channel respectively deposit a common metal electrode, is spinned on channel
Side middle part deposits two tunnel layers, and respectively deposits a feeromagnetic metal electrode on the tunneling layer；It is characterized by: the tunnelling
Layer is the material that can be undergone phase transition at temperature and illumination driving；And the device further comprises having temperature control modules or light
The phase transformation of tunnel layer is driven by control temperature or additional illumination according to control module, and then regulates and controls the resistance value of tunnel layer, finally
Realize the regulation of spin electric device performance；The tunnel layer includes vanadium dioxide (VO2)。
2. a kind of spin electric device using phase-change material as tunnel layer, specially a kind of magnetic tunnel device is most lower
End is common metal electrode, is sequentially depositing ferromagnetic reference, tunnel layer and ferromagnetic free layer thereon, and at the top deposition one
Common metal electrode；It is characterized by: the tunnel layer is the material that can be undergone phase transition at temperature and illumination driving；And
The device further comprises having temperature control modules or illumination control module, by control temperature or additional illumination, drives tunnelling
The phase transformation of layer, and then regulate and control the resistance value of tunnel layer, the final regulation for realizing spin electric device performance, the tunnel layer includes two
Vanadium oxide (VO2)。
3. a kind of spin electric device using phase-change material as tunnel layer according to claim 1 or 2, feature exist
In: the temperature control modules are the prefabricated grooves in a substrate, and wherein by temperature control modules merging；The temperature
Degree control module is located at immediately below tunnel layer, and the conducting wire of module is drawn by the space that groove is reserved, and is connected to total moisture content control
On unit, to realize that temperature is adjusted.
4. a kind of spin electric device using phase-change material as tunnel layer according to claim 1 or 2, feature exist
In: the illumination control module is the light source of adjustable brightness, is placed in the side of tunnel layer, and is normally incident in tunnelling
Layer surface, the conducting wire of light source is connected on total lighting control unit, to realize brightness regulation.
5. a kind of spin electric device using phase-change material as tunnel layer according to claim 1, it is characterised in that:
The spin channel is one of the substance for having certain spin diffusion length, including metal, semiconductor, graphene or a variety of.
6. a kind of spin electric device using phase-change material as tunnel layer according to claim 1, it is characterised in that:
The common metal electrode includes one of golden (Au), platinum (Pt), copper (Cu) or a variety of.
7. a kind of spin electric device using phase-change material as tunnel layer according to claim 1, it is characterised in that:
The feeromagnetic metal electrode includes barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB), ferronickel
(NiFe), one of lanthanum strontium manganese oxygen (LSMO), heusler alloy or a variety of.
8. a kind of spin electric device using phase-change material as tunnel layer according to claim 2, it is characterised in that:
The ferromagnetic reference includes barium ferrite (BAM), iron (Fe), cobalt (Co), nickel (Ni), ferro-cobalt boron (CoFeB), ferronickel
(NiFe), one of lanthanum strontium manganese oxygen (LSMO), heusler alloy or a variety of.
9. a kind of spin electric device using phase-change material as tunnel layer according to claim 2, it is characterised in that:
The ferromagnetic free layer includes one of cobalt (Co), ferro-cobalt (CoFe), ferro-cobalt boron (CoFeB), heusler alloy or a variety of.
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