CN106816447A - The imageing sensor and preparation method of opto-electronic conversion are carried out using quantum dot film - Google Patents
The imageing sensor and preparation method of opto-electronic conversion are carried out using quantum dot film Download PDFInfo
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- CN106816447A CN106816447A CN201611224497.0A CN201611224497A CN106816447A CN 106816447 A CN106816447 A CN 106816447A CN 201611224497 A CN201611224497 A CN 201611224497A CN 106816447 A CN106816447 A CN 106816447A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 11
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 130
- 239000002184 metal Substances 0.000 claims abstract description 130
- 238000000926 separation method Methods 0.000 claims abstract description 78
- 238000002955 isolation Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 283
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 35
- 239000004411 aluminium Substances 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 206010034960 Photophobia Diseases 0.000 abstract description 3
- 208000013469 light sensitivity Diseases 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
Abstract
The invention provides imageing sensor and preparation method that a kind of use quantum dot film carries out opto-electronic conversion, including：Substrate, bottom isolation layer is provided with substrate surface；The N layers of separation layer on bottom isolation layer；The metal throuth hole of equivalent layer is provided with every layer of separation layer, adjacent upper strata metal throuth hole is corresponded and be connected with lower metal through hole；Wherein, N is integer and N >=2；Metal electrode, positioned at top metal throuth hole top；Quantum dot film, positioned at metal electrode and exposed top insulation surface.Imageing sensor of the invention has stronger light sensitivity, bigger dynamic range and the Iimaging Stability for more optimizing, additionally it is possible to ensure in the design of the pixel of small size, it is also possible to obtain high-quality output image.
Description
Technical field
The present invention relates to image sensor technologies field, and in particular to a kind of use quantum dot film carries out opto-electronic conversion
Imageing sensor and preparation method.
Background technology
Imageing sensor refers to the device for converting optical signals to electric signal.What is be widely used at present mainly has ccd image
Sensor and cmos image sensor.
Quantum dot (quantum dot) is the nanocrystal of quasi-zero dimension, by a small amount of atomic building, ball is generally in form
Shape is spherical, and be made up of semi-conducting material (being generally made up of II B~VI B or IIIB~VB elements), stable diameter exists
The nano-particle of 2~20nm.It can be lighted under specific wavelength, and school is easier in production using the screen of technology of quantum dots
Standard, possesses more accurately color representation, and possesses obvious advantage in terms of color saturation.Therefore, by quantum dot application
Prepared quantum thin film sensor in sensor has more frivolous volume, stronger light sensitivity, bigger dynamic
Scope and the image stabilization of optimization.
Because traditional sensor improves resolution ratio by making pixel become smaller, it means that each pixel is to light
Susceptibility it is lower, so as to reduce picture quality, and by contrast, quantum dot film is coated in below convex lens, closer
The characteristic of camera lens can more fully catch light such that it is able to be effectively improved lens performance.The biography that this new technology is made
Sensor can collect the light of traditional sensors chip twice, and be transformed into electric signal with the efficiency of twice, while it is given birth to
Produce cost very low.After using quantum dot film, the thickness and volume of camera on the one hand can be reduced, on the other hand can be significantly
Improve the low light of imageing sensor and shoot dynamic range of performance and image etc..
The content of the invention
In order to overcome problem above, the present invention is intended to provide the image that a kind of use quantum dot film carries out opto-electronic conversion is passed
Sensor and preparation method, so as to improve the performance of imageing sensor.
In order to achieve the above object, a kind of use quantum dot film carries out the imageing sensor of opto-electronic conversion, and it includes：
Substrate, bottom isolation layer is provided with substrate surface；
The N layers of separation layer on bottom isolation layer；The metal throuth hole of equivalent layer is provided with every layer of separation layer, it is adjacent
Upper strata metal throuth hole is corresponded and is connected with lower metal through hole；Wherein, N is integer and N >=2；
Metal electrode, positioned at top metal throuth hole top；
Quantum dot film, positioned at metal electrode and exposed top insulation surface.
Preferably, nitride spacer is additionally provided between adjacent upper strata separation layer and lower floor's separation layer.
Preferably, be additionally provided with n-th layer insulation surface top isolation structure, top isolation structure be located at n-th layer every
The intersection of the adjacent pixel on absciss layer.
Preferably, between the top isolation structure bottom and the n-th layer insulation surface and the top isolates
Silicon nitride protective layer is additionally provided with the top of structure.
Preferably, described image sensor also includes the pad structure on the top metal throuth hole of edges of substrate；
The metallic aluminium that the pad structure includes bottom isolation hatch frame and is filled in bottom isolation hatch frame；The metallic aluminium
Top higher than the bottom isolate hatch frame top；The pad structure bottom and the n-th layer insulation surface it
Between, at the top of the top of bottom isolation hatch frame and metallic aluminium silicon nitride protective layer is additionally provided with, also, in metallic aluminium
The silicon nitride protective layer at top be provided with opening, the top for exposing part metals aluminium.
In order to achieve the above object, present invention also offers a kind of preparation method of imageing sensor, comprise the following steps：
Step 01：One substrate is provided；Also, form bottom isolation layer in substrate surface；
Step 02：One layer of separation layer is formed on bottom isolation layer surface；
Step 03：One layer of through hole is etched in this layer of separation layer, and metal is filled in this layer of through hole, so as to obtain
The metal throuth hole of this layer；
Step 04：One layer of separation layer is re-formed on the substrate for completing step 03；
Step 05, repeat step 03~04 until forming N layers of separation layer, and is formed with equivalent layer in every layer of separation layer
Metal throuth hole, adjacent upper strata metal throuth hole corresponds and is connected with lower metal through hole；Wherein, N be integer and N >=
2；
Step 06：Isolating layer on top is formed in n-th layer insulation surface and n-th layer metal throuth hole；
Step 07：Etching isolating layer on top, to expose positioned at N insulation surfaces and n-th layer metal throuth hole top, and
And retain the isolating layer on top of the intersection of the adjacent pixel being located on n-th layer separation layer, so as to form top isolation structure；
Step 08：Metal electrode is formed at the top of the n-th layer metal throuth hole for exposing；
Step 09：Quantum dot film is formed in metal electrode and exposed n-th layer insulation surface.
Preferably, in the step 03, after this layer of metal throuth hole is formed, also include：In this layer of insulation surface
One layer of nitride spacer is formed with this layer of metal throuth hole top.
Preferably, in the step 06, before isolating layer on top is formed, also include：In the n-th layer separation layer table
One layer of silicon nitride protective layer is formed on face and n-th layer metal throuth hole top.
Preferably, included after the step 06 and also before the step 07：In isolating layer on top and described
Pad structure is prepared on the n-th layer metal throuth hole of substrate edge area.
Preferably, the process for preparing pad structure is specifically included：
First, isolating layer on top of the etching above the n-th layer metal throuth hole of substrate edge area, with edges of substrate area
Groove is formed in isolating layer on top above the n-th layer metal throuth hole in domain, so as to form pad isolation hatch frame；Wherein, ditch
Trench bottom exposes the n-th layer metal throuth hole top of substrate edge area；
Then, the deposited metal aluminium in isolating layer on top surface and groove, also, etching metallic aluminium, only in reservation groove
With the metallic aluminium above groove；Wherein, isolating layer on top surface is higher by the top of metallic aluminium.
Preferably, after pad structure is prepared, also include：In isolating layer on top surface and exposed metallic aluminium table
Face and side wall form silicon nitride protective layer；
After step 08, and before step 09, also include：In the silicon nitride protective layer at the top of the metallic aluminium
Opening is etched, to expose the top of part metals aluminium.
Quantum thin film sensor of the invention has a stronger light sensitivity, bigger dynamic range and more optimizes
Iimaging Stability, additionally, the present invention carries out the absorption and conversion of light by using quantum dot film, it is ensured that in the picture of small size
In the design of element, it is also possible to obtain high-quality output image.
Brief description of the drawings
Fig. 1 is the structural representation of the imageing sensor of a preferred embodiment of the invention
Fig. 2 is the schematic flow sheet of the preparation method of the imageing sensor of a preferred embodiment of the invention
Fig. 3~17 show for each preparation process of the preparation method of the imageing sensor of a preferred embodiment of the invention
It is intended to
Specific embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The present invention is described in further detail below in conjunction with accompanying drawing 1-17 and specific embodiment.It should be noted that, accompanying drawing
In the form of simplifying very much, using non-accurately ratio, and only it is used to convenience, clearly reaches aid illustration the present embodiment
Purpose.
Fig. 1 is referred to, the use quantum dot film of the present embodiment carries out the imageing sensor of opto-electronic conversion, with two-layer
Illustrated as a example by separation layer and double layer of metal through hole, but this is not used in limitation N layers of separation layer of the invention and N layers of metal throuth hole
Scope.The imageing sensor of the present embodiment includes：
One substrate 1, bottom isolation layer 2 is provided with the surface of substrate 1；Specifically, substrate 1 here can be, but not limited to for
N-type or p-type twin polishing silicon chip.The material of bottom isolation layer 2 can be silica, the silica of bottom isolation layer 2
Growth can be, but not limited to use high temperature oxidation process, reaction temperature to can be, but not limited to be 900~1050 DEG C, bottom isolation layer
The thickness of 2 silica can be, but not limited to be 0.5~1 micron.
First separation layer 3, on bottom isolation layer 2；Specifically, the material of the first separation layer 3 can be, but not limited to for
Silica, can be, but not limited to use chemical vapor deposition method, and the thickness of the first separation layer 3 can be, but not limited to be 0.3
~0.5 micron.The material of the first separation layer can also be boron glass, phosphorus glass, boro-phosphorus glass or NCC (black
diamond)。
The second separation layer 7 on the first separation layer 3；Specifically, in the present embodiment, in the first separation layer 3 and second
Nitride spacer 6 is additionally provided between separation layer 7；Second separation layer 7 can also material can also be silica, second
The growth of separation layer 7 and nitride spacer 6 can be, but not limited to be grown using chemical vapour deposition technique；Second separation layer
7 thickness can be 0.3~0.5 micron, and the thickness of nitride spacer 6 can be 0.03~0.06 micron, preferably nitrogenize
The thickness of silicon separation layer 6 can be 0.05 micron.
First layer metal through hole, is arranged in the first separation layer 3；Specifically, the height of first layer metal through hole can be
0.8~1 micron.First layer metal through hole includes being deposited on the He of first layer metal inculating crystal layer 4 of ground floor through-hole side wall and bottom
Ground floor fills metal 5.
Second layer metal through hole, is arranged in the second separation layer 7；First layer metal through hole is with second layer metal through hole one by one
Correspond to and be connected；Specifically, the height of second layer metal through hole can be 0.8~1 micron.Second layer metal through hole includes heavy
Second layer metal inculating crystal layer and the second layer of the product in second layer through-hole side wall and bottom fill metal 8.
Metal electrode 14, positioned at second layer metal via top, and is in contact with second layer metal via top；Metal
The material of electrode 14 can be, but not limited to be nitride metal titanium.
Quantum dot film 15, positioned at metal electrode 14 and the exposed surface of second separation layer 7；Quantum dot film 15 can be
Infrared induction quantum dot film, by the detection for selecting different quantum dots to obtain to different light.
In the present embodiment, top isolation structure 13, top isolation structure 13 are additionally provided with the surface of the second separation layer 7
In the intersection of the adjacent pixel on the second separation layer 7, for isolating adjacent pixel, it is to avoid the crosstalk between adjacent pixel.This
In, the damage in order to avoid etching technics to pad structure, between the bottom of top isolation structure 13 and the surface of the second separation layer 7
Silicon nitride protective layer is provided with, and the top of top isolation structure 13 is additionally provided with silicon nitride protective layer.Preferably, silicon nitride
The thickness of protective layer can be 0.5~1 micron.
Pad structure on the second layer metal through hole at the edge of substrate 1.Specifically, pad structure is isolated including bottom
Hatch frame 10 and the metallic aluminium 11 being filled in pad isolation hatch frame 10；The top of metallic aluminium 11 keeps apart higher than pad
The top of mouth structure 10；Between pad structure bottom and the surface of the second separation layer 7, pad isolate top and the gold of hatch frame 10
Belong to aluminium 11 top be also provided with silicon nitride protective layer 12, the silicon nitride protective layer 12, the bottom of top isolation structure 13 with
The thickness of the silicon nitride protective layer at the top of silicon nitride protective layer and top isolation structure 13 between the surface of the second separation layer 7
Degree can with identical, and silicon nitride protective layer 12 and the top of top isolation structure 13 silicon nitride protective layer can using it is same into
Membrane process is prepared simultaneously.
Also, the silicon nitride protective layer 12 at the top of metallic aluminium 11 is provided with opening, for exposing part metals aluminium
11 top, so as to follow-up testing electrical property and encapsulation.
It should be noted that the present embodiment is illustrated as a example by with two-layer separation layer 3,7 and double layer of metal through hole, so exist
Three layers or more the metallic spacers of other embodiments of the invention and three layers or more the stacked structure of metal throuth hole and every
The relation of layer metal throuth hole, leads to the two-layer separation layer of the present embodiment and the stacked structure of double layer of metal through hole and every layer of metal
The relation in hole is identical.
Next, Fig. 2 is refer to, the above-mentioned image sensing with two-layer separation layer and double layer of metal through hole of the present embodiment
The preparation method of device is comprised the following steps：
Step 01：Refer to Fig. 3, there is provided a substrate 1；Also, form bottom isolation layer 2 on the surface of substrate 1；
Specifically, the material of bottom isolation layer 2 can be silica, the growth of the silica of bottom isolation layer 2 can
With but be not limited to use high temperature oxidation process, reaction temperature to can be, but not limited to be 900~1050 DEG C, the two of bottom isolation layer 2
The thickness of silica can be, but not limited to be 0.5~1 micron.
Step 02：Fig. 4 is referred to, ground floor separation layer 3 is formed on the surface of bottom isolation layer 2；
Specifically, forming ground floor separation layer 3 on the surface of bottom isolation layer 2；The material of the first separation layer 3 can with but do not limit
In being silica, can be, but not limited to use chemical vapor deposition method, the thickness of the first separation layer 3 can be, but not limited to for
0.3~0.5 micron.
Step 03：Fig. 5 is referred to, ground floor through hole is etched in ground floor separation layer 3, and in ground floor through hole
Filling metal, so as to obtain first layer metal through hole；
Specifically, the filling metal 15 in first layer metal through hole can be copper, photoetching and anisotropic dry can be used
Method etching technics, etches ground floor through hole in ground floor separation layer 3, then, photoresist is removed, then, using physics gas
Phase depositing operation grows copper seed layer 4, then the copper seed layer 4 using ECP methods in ground floor through hole in ground floor through hole
Superficial growth copper metal 5, until the full ground floor through hole of the filling of copper metal 5, and using chemical mechanical milling tech planarization the
The top of copper metal 5 in one layer of through hole, until the top of copper metal 5 flushes with the surface of ground floor separation layer 3.
Here, after the first layer metal through hole is formed, also include：Fig. 6 is referred to, in the table of ground floor separation layer 3
Face and the first layer metal via top form one layer of nitride spacer 6；The growth of nitride spacer 6 can be, but not limited to
Grown using chemical vapour deposition technique；The thickness of nitride spacer 6 can be 0.03~0.06 micron, preferably silicon nitride
The thickness of separation layer 6 can be 0.05 micron.
Step 04：One layer of separation layer is re-formed on the substrate for completing step 03；
Step 05：Repeat step 03~04, until forming N layers of separation layer, and is formed with phase in every layer of metallic spacer
The metal throuth hole of layer, adjacent upper strata metal throuth hole is answered to correspond and be connected with lower metal through hole；Wherein, N is integer
And N >=2；
Specifically, N here is 2；First, Fig. 7 is referred to, second layer separation layer is deposited on the surface of nitride spacer 6
7, the second separation layer 7 can also material can also be silica, the growth of the second separation layer 7 can be, but not limited to use
Chemical vapour deposition technique grows；The thickness of the second separation layer 7 can be 0.3~0.5 micron.
Then, Fig. 8 is referred to, second layer through hole is etched in second layer separation layer 7, and filled out in second layer through hole
Metal 8 is filled, so as to obtain second layer metal through hole；Specifically, second layer filling metal 8 can be copper, can using photoetching and
Anisotropic dry etch process, etches second layer through hole in second layer separation layer 7, then, removes photoresist, then,
Copper seed layer is grown in second layer through hole using physical gas-phase deposition, then using ECP methods in second layer through hole
Copper seed layer superficial growth copper metal 8, until the full second layer through hole of the filling of copper metal 8, and use chemical mechanical milling tech
Copper metal top in planarization second layer through hole, until copper metal top flushes with the surface of second layer separation layer 7.Need explanation
, for other embodiments of the invention in three layers or more separation layers and three layers or more metal throuth holes, Ke Yican
Prepared by the process of the step of according to the present embodiment 03 and 04, repeat no more here.
Step 06：Isolating layer on top is formed at the top of n-th layer insulation surface and n-th layer metal throuth hole；Specifically, bag
Include：
First, before isolating layer on top is formed, first, Fig. 9 is referred to, in order to avoid subsequent etching processes are to prepared
Pad structure and top isolation structure damage, formed on the surface of second layer separation layer 7 and second layer metal via top
One layer of silicon nitride protective layer 9；Preferably, the thickness of silicon nitride protective layer 9 can be 0.5~1 micron.
Then, Figure 10~11 are referred to, is isolated at the top of formation on the surface of second layer separation layer 7 and second layer metal through hole
Layer 10', and patterned top separation layer 10', in isolating layer on top 10' and in the second layer metal of the fringe region of substrate 1
Pad structure is prepared on through hole；
Here, the preparation process of pad structure is specifically included：
Step A, refers to Figure 10, isolates at the top of the surface of second layer separation layer 7 and second layer metal via top are formed
Layer 10', and it is possible to but be not limited to be etched using photoetching and plasma anisotropic dry etch process on the side of substrate 1
Isolating layer on top 10' above the second layer metal through hole in edge region, with the second layer metal through hole of the fringe region of substrate 1
Groove is formed in the isolating layer on top 10' of side；Wherein, channel bottom exposes the second layer metal through hole top of substrate edge area
Portion；
Step B, refers to Figure 11, the deposited metal aluminium 11 in isolating layer on top 10' surfaces and groove, also, etching gold
Category aluminium 11, the metallic aluminium 11 in a reservation groove and above groove；Wherein, the top of metallic aluminium 11 is higher by isolating layer on top 10'
Surface；
After pad structure is prepared, also include：Figure 12 is referred to, in isolating layer on top 10' surfaces and exposed gold
The category surface of aluminium 11 and side wall form silicon nitride protective layer 12.
Step 07：Etching isolating layer on top, to expose positioned at N insulation surfaces and n-th layer metal throuth hole top；
Specifically, referring to Figure 13, can be, but not limited to be carved using photoetching and plasma anisotropic etching technics
The isolating layer on top 10' in non-pad structure region is lost, while retaining the intersection of the adjacent pixel on second layer separation layer 7
Isolating layer on top 10', so as to form pad isolation opening 10 in pad structure region, the of the intersection of adjacent pixel
Top isolation structure 13 is formed on two layers of separation layer 7.Here, the pad isolation opening of top isolation structure 13 and pad structure
10 may be incorporated for the isolation between adjacent pixel, prevent the crosstalk between pixel.
Step 08：Metal electrode is formed at the top of the n-th layer metal throuth hole for exposing；
Specifically, referring to Figure 14, can be, but not limited to using physical gas-phase deposition in exposed second layer metal
Via top, second layer separation layer 7, pad structure surface form metal electrode 14, also, refer to Figure 15 by sputtering, can
With but be not limited by photoetching and anisotropic dry etch process etching removal the second separation layer 7 and pad structure surface gold
Category electrode 14, so as to form the metal electrode 14 for being only located at second layer metal via top；The material of metal electrode 14 can be
Titanium nitride.
After metal electrode 14 is formed, also include：Figure 16 is referred to, be can be, but not limited to using photoetching and anisotropy
Dry etch process etches opening in the silicon nitride protective layer 12 at the top of metallic aluminium 11, to expose part metals aluminium 11
Top, in order to follow-up typical case's test and encapsulate.Finally, the photoetching glue residua employed in photoetching process is also removed.
Step 09：Quantum dot film is formed in metal electrode and exposed n-th layer insulation surface.
Specifically, refer to Figure 17, can be, but not limited to using spin-coating method metal electrode 14 and the exposed second layer every
The surface of absciss layer 7 forms quantum dot film 15.
It should be noted that three layers or more separation layers in other embodiments of the present invention and three layers or more metal throuth hole
Imageing sensor preparation, can be using the method described by the above-mentioned steps 01~09 of the present embodiment, difference be, for
Three layers or more separation layers and three layers or more metal throuth hole can be completed by repeat step 03~04, no longer be gone to live in the household of one's in-laws on getting married here
State.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (10)
1. a kind of use quantum dot film carries out the imageing sensor of opto-electronic conversion, it is characterised in that including：
Substrate, bottom isolation layer is provided with substrate surface；
The N layers of separation layer on bottom isolation layer；The metal throuth hole of equivalent layer, adjacent upper strata are provided with every layer of separation layer
Metal throuth hole is corresponded and is connected with lower metal through hole；Wherein, N is integer and N >=2；
Metal electrode, positioned at top metal throuth hole top；
Quantum dot film, positioned at metal electrode and exposed top insulation surface.
2. imageing sensor according to claim 1, it is characterised in that adjacent upper strata separation layer and lower floor's separation layer it
Between be additionally provided with nitride spacer.
3. imageing sensor according to claim 1, it is characterised in that top is additionally provided with n-th layer insulation surface
Isolation structure, top isolation structure is located at the intersection of the adjacent pixel on n-th layer separation layer；The top isolation structure bottom
Silicon nitride protective layer is additionally provided between the n-th layer insulation surface and at the top of the top isolation structure.
4. imageing sensor according to claim 1, it is characterised in that described image sensor also includes being located at substrate edge
Pad structure on the top metal throuth hole of edge, the pad structure include bottom isolation hatch frame and be filled in bottom every
Leave the metallic aluminium in mouth structure；The top of the metallic aluminium isolates the top of hatch frame higher than the bottom；The pad
Between structural base and the n-th layer insulation surface, the bottom isolate hatch frame top and metallic aluminium top also
It is provided with silicon nitride protective layer, also, silicon nitride protective layer at the top of metallic aluminium is provided with opening, for exposing part
The top of metallic aluminium.
5. a kind of preparation method of imageing sensor, it is characterised in that comprise the following steps：
Step 01：One substrate is provided；Also, form bottom isolation layer in substrate surface；
Step 02：One layer of separation layer is formed on bottom isolation layer surface；
Step 03：One layer of through hole is etched in this layer of separation layer, and metal is filled in this layer of through hole, so as to obtain the layer
Metal throuth hole；
Step 04：One layer of separation layer is re-formed on the substrate for completing step 03；
Step 05, repeat step 03~04 until forming N layers of separation layer, and is formed with the gold of equivalent layer in every layer of separation layer
Category through hole, adjacent upper strata metal throuth hole is corresponded and is connected with lower metal through hole；Wherein, N is integer and N >=2；
Step 06：Isolating layer on top is formed in n-th layer insulation surface and n-th layer metal throuth hole；
Step 07：Etching isolating layer on top, to expose positioned at N insulation surfaces and n-th layer metal throuth hole top, and protects
The isolating layer on top of the intersection of adjacent pixel on n-th layer separation layer is stayed, so as to form top isolation structure；
Step 08：Metal electrode is formed at the top of the n-th layer metal throuth hole for exposing；
Step 09：Quantum dot film is formed in metal electrode and exposed n-th layer insulation surface.
6. the preparation method of imageing sensor according to claim 5, it is characterised in that in the step 03, in shape
Into after this layer of metal throuth hole, also include：Formed at the top of this layer of insulation surface and this layer of metal throuth hole one layer of silicon nitride every
Absciss layer.
7. the preparation method of imageing sensor according to claim 5, it is characterised in that in the step 06, in shape
Into before isolating layer on top, also include：One layer is formed at the top of the n-th layer insulation surface and the n-th layer metal throuth hole
Silicon nitride protective layer.
8. the preparation method of imageing sensor according to claim 5, it is characterised in that after the step 06 and in institute
Also include before stating step 07：Prepared in isolating layer on top and on the n-th layer metal throuth hole of the substrate edge area
Pad structure.
9. the preparation method of imageing sensor according to claim 8, it is characterised in that prepare the process of pad structure
Specifically include：
First, isolating layer on top of the etching above the n-th layer metal throuth hole of substrate edge area, with substrate edge area
Groove is formed in isolating layer on top above n-th layer metal throuth hole, so as to form pad isolation hatch frame；Wherein, trench bottom
Portion exposes the n-th layer metal throuth hole top of substrate edge area；
Then, the deposited metal aluminium in isolating layer on top surface and groove, also, etching metallic aluminium, only retain groove in and ditch
Metallic aluminium above groove；Wherein, isolating layer on top surface is higher by the top of metallic aluminium.
10. the preparation method of imageing sensor according to claim 9, it is characterised in that prepare pad structure it
Afterwards, also include：Silicon nitride protective layer is formed on isolating layer on top surface and exposed metallic aluminum surface and side wall；
After step 08, and before step 09, also include：Etched in the silicon nitride protective layer at the top of the metallic aluminium
Go out opening, to expose the top of part metals aluminium.
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| CN107819000A (en) * | 2017-09-26 | 2018-03-20 | 上海集成电路研发中心有限公司 | A kind of imaging sensor and preparation method thereof |
| CN114067636A (en) * | 2021-12-17 | 2022-02-18 | 国开启科量子技术(北京)有限公司 | Quantum random number teaching device |
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| US20150064832A1 (en) * | 2012-07-31 | 2015-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Elevated Photodiode with a Stacked Scheme |
| CN106206634A (en) * | 2016-07-27 | 2016-12-07 | 上海集成电路研发中心有限公司 | A kind of image sensor architecture and preparation method thereof |
| CN106601766A (en) * | 2016-12-20 | 2017-04-26 | 上海集成电路研发中心有限公司 | Quantum dot film image sensor structure and manufacturing method thereof |
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| US20150064832A1 (en) * | 2012-07-31 | 2015-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Elevated Photodiode with a Stacked Scheme |
| CN106206634A (en) * | 2016-07-27 | 2016-12-07 | 上海集成电路研发中心有限公司 | A kind of image sensor architecture and preparation method thereof |
| CN106601766A (en) * | 2016-12-20 | 2017-04-26 | 上海集成电路研发中心有限公司 | Quantum dot film image sensor structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107819000A (en) * | 2017-09-26 | 2018-03-20 | 上海集成电路研发中心有限公司 | A kind of imaging sensor and preparation method thereof |
| CN114067636A (en) * | 2021-12-17 | 2022-02-18 | 国开启科量子技术(北京)有限公司 | Quantum random number teaching device |
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