CN106816367A - It is a kind of to control the circular two-dimensional scanner for injecting of ion - Google Patents
It is a kind of to control the circular two-dimensional scanner for injecting of ion Download PDFInfo
- Publication number
- CN106816367A CN106816367A CN201610184948.6A CN201610184948A CN106816367A CN 106816367 A CN106816367 A CN 106816367A CN 201610184948 A CN201610184948 A CN 201610184948A CN 106816367 A CN106816367 A CN 106816367A
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- CN
- China
- Prior art keywords
- way
- control
- fpga
- amplifier circuit
- dsp processor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
The circular two-dimensional scanner for injecting of ion is controlled the invention discloses a kind of, belongs to field of semiconductor manufacture.The device includes main control computer, communication interface circuit, dsp processor, FPGA, keyboard, two-way high-speed DAC change-over circuit, two-way filter circuit, two-way buffer amplifier circuit and high voltage amplifier circuit.Two-way high voltage amplifier circuit and two-way buffer amplifier circuit are connected, two-way buffer amplifier circuit and two-way high-speed DAC are connected, FPGA and two-way high-speed DAC are connected, dsp processor is connected with FPGA, main control computer connects dsp processor and enters row data communication by communication interface circuit, and start-up and shut-down control and working condition are indicated.The present invention can realize the circular scan of ion implanting chip, arbitrary region scanning, reduce sweep time.
Description
Technical field
The circular two-dimensional scanner for injecting of ion is controlled the present invention relates to a kind of, is related to ion implantation apparatus, belong to semiconductor equipment manufacturing field.
Background technology
Ion implantation technique is to be flourished in the world over nearly 30 years and a kind of wide variety of material surface modifying new and high technology, adulterated in semi-conducting material, extremely wide application is obtained on the surface of metal, ceramics, high molecular polymer etc. is modified, huge economic benefit and social benefit is achieved.In the electronics industry, ion implanting becomes a kind of important doping techniques in microelectronic technique, in present age manufacture large scale integrated circuit, it may be said that be a kind of essential means.
At present all using the control scanning output of two-dimensional scan control device, scan mode has electric scanning to ion implanting：Chip is fixed, and level and vertical direction all use electron beam scanning；Mechanical scanning：Line is fixed, chip motion；Mixed sweep：Horizontal direction electron beam scanning, chip vertical direction mechanical movement.These scan modes are all rectangular scannings, it is impossible to realize circular scan and arbitrary region scanning.
The invention provides a kind of two-dimensional scanner that can realize ion implanting circular scan and arbitrary region scanning.
The content of the invention
A kind of two-dimensional scan control device of the circular injection of ion proposed the present invention be directed to this problem of two-dimensional scanner of ion implantation apparatus in the prior art without control circular scan and local scanning, the invention is applied to ion implantation apparatus, can precise control scanning means carry out circular scanning and local scanning.
The circular two-dimensional scanner for injecting of ion is controlled the invention discloses a kind of, belongs to semiconductor equipment manufacturing field.The present invention is realized by following technical approach：
It is a kind of to control the circular two-dimensional scanner for injecting of ion, including main control computer, communication interface circuit, dsp processor, FPGA, keyboard, two-way high-speed DAC change-over circuit, two-way filter circuit, two-way buffer amplifier circuit and high voltage amplifier circuit.Two-way high voltage amplifier circuit and two-way buffer amplifier circuit are connected, and two-way buffer amplifier circuit and two-way high-speed DAC are connected, and FPGA and two-way high-speed DAC are connected, and dsp processor is connected with FPGA, and main control computer connects dsp processor by communication interface circuit.
A kind of two-dimensional scanner of the circular injection of above-mentioned control ion, it is characterised in that：Dsp processor is connected with FPGA, and dsp processor carries out high-speed data treatment and the calculating of scanning area by receiving the control command that keyboard interface is transmitted, and controls sweep speed, and control FPGA completes the generation of waveform.
A kind of two-dimensional scanner of the circular injection of above-mentioned control ion, it is characterised in that：FPGA and two-way high-speed DAC are connected, control two-way high-speed DAC produces scanning voltage both horizontally and vertically, it is sent to filter circuit and filters high-frequency noise, it is then fed into buffer amplifier circuit, output waveform voltage magnitude highest after buffer amplifier circuit can reach positive and negative 10 volts, again by high-tension electricity amplifying circuit, export the deflection of more than 10,000 volts of high tension voltage control electron beam, the size for changing both horizontally and vertically scanning voltage in real time just can in real time change electron beam horizontal movement velocity and vertically move speed, realize the control of scanning area.
A kind of two-dimensional scanner of the circular injection of above-mentioned control ion, it is characterised in that：Main control computer connects dsp processor and enters row data communication by communication interface circuit, and start-up and shut-down control and working condition are indicated.
The present invention can realize the circular scan of ion implanting chip, reduce sweep time；Sector scanning is realized, strengthens local scanning.
Brief description of the drawings
The invention will be further described below in conjunction with the accompanying drawings.
Fig. 1 is structured flowchart of the invention；
Fig. 2 is both horizontally and vertically scanning voltage output waveform figure of the invention.
Specific embodiment
Referring to Fig. 1, whole system is made up of main control computer, communication interface circuit, dsp processor, FPGA, keyboard, two-way high-speed DAC change-over circuit, two-way filter circuit, two-way buffer amplifier circuit and high voltage amplifier circuit.Dsp processor and FPGA are the nucleus modules of whole system, DSP is using the ADSP-BF531 embeded processors from ADI companies, the abundant interface features carried using it, the design of the external interface circuits such as data communication, keyboard, the network interface of the peripheral hardwares such as structure LAN, USB, UART, completion and main control computer.FPGA, using internal RAM stored waveform data, completes the generation function of waveform using the EP3C16Q240C8N of Cyclone III.
Dsp processor has superpower Digital Signal Processing and Comprehensive Control ability, complete the control of whole system, by receiving the control command that keyboard interface is transmitted, FPGA is operated, changed using the two-way waveform required for FPGA generations scanning voltage both horizontally and vertically and by high-speed d/a, feeding filter circuit filters high-frequency noise and is then fed into buffer amplifier circuit, output waveform voltage magnitude highest after buffer amplifier circuit can reach positive and negative 10 volts, again by high-tension electricity amplifying circuit, export the deflection of more than 10,000 volts of high tension voltage control electron beam, the size for changing both horizontally and vertically scanning voltage in real time just can in real time change electron beam horizontal movement velocity and vertically move speed, realize the control of scanning area.
Both horizontally and vertically scanning voltage output waveform figure of the invention is as shown in Figure 2, horizontal direction scanning voltage peak value since 0 volt is stepped up, maximum scan crest voltage is exported when sweeping to the middle part of wafer, at the same time, vertical scan direction voltage since on the occasion of maximum output gradually reduce to 0 volt, complete the scanning of wafer top half ion implanting.Both horizontally and vertically scanning voltage output situation is just opposite during the ion implanting scanning of wafer the latter half.
Claims (4)
1. it is a kind of to control the circular two-dimensional scanner for injecting of ion, including main control computer, communication interface circuit, dsp processor, FPGA, keyboard, two-way high-speed DAC change-over circuit, two-way filter circuit, two-way buffer amplifier circuit and high voltage amplifier circuit；Two-way high voltage amplifier circuit and two-way buffer amplifier circuit are connected, and two-way buffer amplifier circuit and two-way high-speed DAC are connected, and FPGA and two-way high-speed DAC are connected, and dsp processor is connected with FPGA, and main control computer connects dsp processor by communication interface circuit.
2. the two-dimensional scanner that a kind of control ion circle according to claim 1 is injected, it is characterised in that：Dsp processor is connected with FPGA, and dsp processor carries out high-speed data treatment and the calculating of scanning area by receiving the control command that keyboard interface is transmitted, and controls sweep speed, and control FPGA completes the generation of waveform.
3. the two-dimensional scanner that a kind of control ion circle according to claim 1 is injected, it is characterised in that：FPGA and two-way high-speed DAC are connected, and control two-way high-speed DAC produces scanning voltage both horizontally and vertically, realizes the control of scanning area.
4. the two-dimensional scanner that a kind of control ion circle according to claim 1 is injected, it is characterised in that：Main control computer connects dsp processor and enters row data communication by communication interface circuit, and start-up and shut-down control and working condition are indicated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610184948.6A CN106816367A (en) | 2016-03-29 | 2016-03-29 | It is a kind of to control the circular two-dimensional scanner for injecting of ion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610184948.6A CN106816367A (en) | 2016-03-29 | 2016-03-29 | It is a kind of to control the circular two-dimensional scanner for injecting of ion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106816367A true CN106816367A (en) | 2017-06-09 |
Family
ID=59106465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610184948.6A Pending CN106816367A (en) | 2016-03-29 | 2016-03-29 | It is a kind of to control the circular two-dimensional scanner for injecting of ion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106816367A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87106497A (en) * | 1986-09-24 | 1988-07-20 | 伊顿公司 | Description ion beam implanter scan control system |
| CN1414606A (en) * | 2001-10-26 | 2003-04-30 | 日新电机株式会社 | Method and equipment of ion implantation |
| CN1691269A (en) * | 2004-01-12 | 2005-11-02 | 应用材料公司 | Method of implanting a substrate and an ion implanter for performing the method |
| CN103477416A (en) * | 2011-03-31 | 2013-12-25 | 艾克塞利斯科技公司 | Improved uniformity of a scanned ion beam |
| CN105097399A (en) * | 2014-05-19 | 2015-11-25 | 北京中科信电子装备有限公司 | Dosage detection and control system |
-
2016
- 2016-03-29 CN CN201610184948.6A patent/CN106816367A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87106497A (en) * | 1986-09-24 | 1988-07-20 | 伊顿公司 | Description ion beam implanter scan control system |
| CN1414606A (en) * | 2001-10-26 | 2003-04-30 | 日新电机株式会社 | Method and equipment of ion implantation |
| CN1691269A (en) * | 2004-01-12 | 2005-11-02 | 应用材料公司 | Method of implanting a substrate and an ion implanter for performing the method |
| CN103477416A (en) * | 2011-03-31 | 2013-12-25 | 艾克塞利斯科技公司 | Improved uniformity of a scanned ion beam |
| CN105097399A (en) * | 2014-05-19 | 2015-11-25 | 北京中科信电子装备有限公司 | Dosage detection and control system |
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Application publication date: 20170609 |
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