CN106816353B - Plasma source element, plasma source apparatus and its application - Google Patents
Plasma source element, plasma source apparatus and its application Download PDFInfo
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- CN106816353B CN106816353B CN201510870305.2A CN201510870305A CN106816353B CN 106816353 B CN106816353 B CN 106816353B CN 201510870305 A CN201510870305 A CN 201510870305A CN 106816353 B CN106816353 B CN 106816353B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
Abstract
The present invention relates to plasma source element, plasma source apparatus and its applications.The plasma source element includes energy supply system and microwave cavity system, the microwave cavity system includes coaxial-type microwave cavity, metal antenna, coaxial metal column, hollow metal cylinder and cermet portion, and the coaxial-type microwave cavity offers the opening of out-of-alignment first and the second opening respectively in bottom and top；External first opening of hollow metal cylinder；The coaxial metal column is coaxially inserted in the coaxial-type microwave cavity, and one end is connect with the top, the other end extends outside the hollow metal cylinder；The cermet portion is filled between the coaxial metal column and the hollow metal cylinder；The metal antenna is inserted in the coaxial-type microwave cavity, and one end is electrically connected with the bottom, and the other end extends second opening；Second opening is externally provided with the coaxial adapter being connected with the energy supply system.
Description
Technical field
The invention belongs to plasma technique and Diamond Synthesizing Technology field more particularly to a kind of plasma source lists
Member, plasma source apparatus and its application.
Background technology
Currently, for the deposition of diamond thin, it is common to use filament CVD.This method usually using tantalum wire or
Tungsten filament cracks methane, and by launching electronics after Resistant heating, form degree of ionization as resistance wire by resistive heater
Lower plasma, and then realize the deposition of diamond thin.Synthesis of diamond film in this way, synthesis window
Temperature can be realized by adjusting the distance between chip bench and resistive heater to diamond generally between 600-1200 DEG C
The control of film temperature, to realize the synthesis of Diamond Thin Films Materials, operation principle and device structure schematic diagram such as Fig. 1 institutes
Show.
However, when using filament CVD diamond synthesis, since untreated resistance wire can not bear larger technique electricity
Stream, therefore, it is necessary to which resistance wire is carried out carbonization treatment in advance, increases the fussy degree of preparation process；And Resistant heating mistake
Cheng Zhong, easy ting produce deformation leads to problems such as short circuit or plasma be unevenly distributed so that the replacement frequency of resistance wire is high；Separately
Outside, since the degree of ionization of resistance wire launching electronics generation plasma is very low, cause the etching number of particles generated insufficient, most
Eventually so that synthesized Diamond Thin Film Quality is not high.In addition, big with power height, power consumption using CVD method diamond synthesis
Disadvantage.Some above-mentioned row problems, seriously constrain the development of diamond synthesizing.
Invention content
The purpose of the present invention is to provide a kind of plasma source elements, it is intended to solve the prior art and need to use resistance wire
Diamond synthesis and resistance wire has that a series of above-mentioned deficiencies cause diamond synthesizing development space to be obstructed.
Another object of the present invention is to provide a kind of plasma source apparatus, it is intended to solve the prior art and need using electricity
Hinder silk diamond synthesis and resistance wire has that a series of above-mentioned deficiencies cause diamond synthesizing development space to be obstructed.
It is still another object of the present invention to provide a kind of methods preparing diamond thin using plasma source apparatus.
The invention is realized in this way a kind of plasma source element, including energy supply system, further include microwave resonance
Chamber system, the microwave cavity system include coaxial-type microwave cavity, metal antenna, coaxial metal column, hollow metal circle
Column and cermet portion, wherein the bottom of the coaxial-type microwave cavity coaxially offers the first opening, described coaxially to decline
It offers at the top of wave resonance chamber and is open with the first opening out-of-alignment second；The hollow metal cylinder is external in described
First opening of coaxial-type microwave cavity, and the hollow metal cylinder and the coaxial-type microwave cavity are coaxial；Institute
It states coaxial metal column to be coaxially inserted in the coaxial-type microwave cavity, the top of one end and the coaxial-type microwave cavity
Connection, the other end are open by described first and extend outside the hollow metal cylinder；The cermet portion is filled in institute
It states between coaxial metal column and the hollow metal cylinder；The metal antenna is inserted in the coaxial-type microwave cavity,
One end is electrically connected with the bottom, and the other end extends second opening；Second opening is externally provided with coaxial adapter,
And the coaxial-type microwave cavity is connected by the coaxial adapter with the energy supply system.
And a kind of plasma source apparatus, include the above-mentioned plasma source element of vacuum tank and multiple dotted arrangements,
Wherein, the vacuum tank include vacuum chamber, the loading base station that forms the babinet of the vacuum chamber and be arranged in the babinet, institute
It states babinet and offers bleeding point and air inlet；The roof of the babinet offers the opening communicated with the vacuum chamber, described etc.
The hollow metal cylinder of plasma source unit is inserted by the opening in the vacuum chamber.
Correspondingly, a kind of method preparing diamond thin using above-mentioned plasma source apparatus, includes the following steps：
Substrate is placed on the loading base station, vacuumizing makes the vacuum chamber be vacuum environment, and is passed through working gas,
Open energy supply system so that the coaxial metal column of the embedded vacuum chamber generates plasma cloud；
Adjust the temperature of the substrate, depositing diamond film.
Plasma source element provided by the invention is not required to setting resistance wire, and therefore, the generation of plasma environment is disobeyed
Rely resistance wire, prepares deficiency of the diamond in device and method so as to break away from filament CVD, diamond is avoided to prepare
The short circuit that occurs in journey, the problems such as deposition gases ionization rate is low, sample quality is bad.In addition, importantly, the present invention provides
Plasma source element, by the coaxial-type microwave cavity, coaxial metal column, hollow metal cylindrical structure be arranged, can
So that microwave forms resonance under the boundary condition effect of the coaxial-type microwave cavity, electric field superposition is generated, and make
The microwave energy that the energy supply system provides can be gathered on the coaxial metal column by sky by obtaining the coaxial metal column
One end of heart metal cylinder, provides microwave energy.
Plasma source apparatus provided by the invention, multiple dotted arrangements of plasma unit, can generate big face
The uniform plasma of product improves the quality of diamond to realize the uniform deposition of diamond thin；Meanwhile it can basis
The number for needing to be arranged plasma unit of actual production scale, realizes the deposition of large-area diamond, and then improve
Production efficiency reduces production cost, realizes industrialization.In addition, plasma source apparatus provided by the invention, deposition gases ionization
Rate is high, and the uniform deposition of High Quality Diamond Film can be realized under 300 DEG C of low temperature condition, will not be caused to electronic equipment
It destroys.
The method provided by the invention for preparing diamond thin using above-mentioned plasma source apparatus, method is simple, production
Efficient, production cost is low, and obtained diamond thin is homogeneous.
Description of the drawings
Fig. 1 is the filament CVD diamond synthesis operation principle and device structure schematic diagram that the prior art provides；
Fig. 2 is plasma source element structural schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the composition schematic diagram of energy supply system provided in an embodiment of the present invention；
Fig. 4 is plasma source apparatus structural schematic diagram provided in an embodiment of the present invention；
Fig. 5 is that plasma source element provided in an embodiment of the present invention is in matrix form schematic diagram.
Specific implementation mode
In order to make technical problems, technical solutions and advantageous effects to be solved by the present invention be more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In conjunction with Fig. 2, an embodiment of the present invention provides a kind of plasma source elements 1, including 11 He of microwave cavity system
Energy supply system 12, the microwave cavity system 11 include coaxial-type microwave cavity 111, metal antenna 112, coaxial gold
Belong to column 113, hollow metal cylinder 115 and cermet portion 114, wherein the bottom of the coaxial-type microwave cavity 111 is coaxial
Offer the first opening 1111, the top of the coaxial-type microwave cavity 111 offers different from first opening 1111
Second opening 1112 of axis；The hollow metal cylinder 115 is external in the first opening of the coaxial-type microwave cavity 111
At 1111, and the hollow metal cylinder 115 and the coaxial-type microwave cavity 111 are coaxial；The coaxial metal column 113 is same
Axis is inserted in the coaxial-type microwave cavity 111, and one end connect with the top of the coaxial-type microwave cavity 111, is another
One end is by first opening 1111 and extends outside the hollow metal cylinder 115；The cermet portion 114 is filled in
Between the coaxial metal column 113 and the hollow metal cylinder 115；The metal antenna 112, which is inserted in, described coaxially to decline
In wave resonance chamber 111, one end is electrically connected with the bottom of the coaxial-type microwave cavity 111, and the other end extends described second
Opening 1112；It is externally provided with coaxial adapter 13 at second opening 1112, and the coaxial-type microwave cavity 11 passes through institute
Coaxial adapter 13 is stated with the energy supply system 12 to be connected.
Plasma source element 1 provided in an embodiment of the present invention includes two parts, provides the energy supply system 12 of energy
Composition and working principle with the microwave cavity system 11 for generating plasma, the energy supply system 12 is that this field is normal
Rule, including microwave signal source, point position control device, power amplifier, isolator etc. are specific as shown in Figure 3.Wherein, the current potential
Controller is for regulating and controlling microwave power；The isolator is for preventing reflection power from returning to the power amplifier, to avoid
Power tube component is burnt out.The operation principle of the energy supply system 12 is：Microwave signal source generates low power microwave signal
(0.1-1 watts) is transmitted to power amplifier by potentiometric controller, and HIGH-POWERED MICROWAVES is formed after power amplifier amplification
(30-200 watts), HIGH-POWERED MICROWAVES are transmitted to microwave cavity system 11 after isolator by coaxial cable, specifically, high-power
Microwave is coupled to by the metal antenna 112 (microwave transmission antenna) in the coaxial-type microwave cavity 111, is plasma
Electric discharge provides breakdown energy while maintaining plasma to provide required energy for heating.
In the embodiment of the present invention, the operation principle of the plasma source element 1 is：The energy supply system 12 passes through
It is external in the coaxial adapter 13 of the coaxial-type microwave cavity 111, is connected with the coaxial-type microwave cavity 11
It connects.The plasma unit 1 uses the coaxial-type microwave cavity 111, passes through the coaxial converting interface 13 and the gold
Belong to antenna 112, in the microwave feed-in microwave cavity that the energy supply system 12 is provided, by the coaxial metal column
113 are gathered in microwave energy on the i.e. described hollow metal cylinder 115 in top of discharge cell, to generate plasma.Into one
Step, pass through the cermet 115 and be brazed so that discharge cell and microwave feeding portion separate from.Further, Ke Yitong
It crosses sealing flange the plasma source element 1 is arranged in the plasma source apparatus, by discharge cell and be placed in true
Altitude, with microwave feeding portion separate from.
In the embodiment of the present invention, for the coaxial-type microwave cavity 111 using cylindrical cavity body structure, material is preferential
But it is not limited to the metal materials such as iron, aluminium.The coaxial-type microwave cavity 111, metal antenna 112, coaxial metal column 113, sky
The reasonable setting of heart metal cylinder 115 is the key that coupling and its coupling efficiency of microwave.Specifically, the metal antenna 112
The position for deviateing central axis from the coaxial-type microwave cavity 111 is longitudinally disposed, thus by the energy supply system 12
The microwave coupling of offer provides breakdown energy for plasma discharge while being heating dimension to the coaxial-type microwave cavity 111
It holds plasma and required energy is provided.115 peripheral hardware of hollow metal cylinder and 111 center of coaxial-type microwave cavity
Axial location, meanwhile, the coaxial metal column 113 is arranged on the central axis of the coaxial-type microwave cavity 111 so that
Microwave forms the enough microwaves of intensity in the one end of the hollow metal cylinder 115 far from the coaxial-type microwave cavity 111
Electric field energy, the microwave electric field energy are enough to puncture low pressure gas, ensure microwave energy can be converted into here etc. from
The ionizing energy of daughter supplies.In addition, the top of one end of the coaxial metal column 113 and the coaxial-type microwave cavity 111
Portion connects, and the other end passes through except the hollow metal cylinder 115, i.e., the length of the coaxial metal column 113 is more than described same
The sum of the height of shaft type microwave cavity 111 and the hollow metal cylinder 115.
As a preferred embodiment, in order to enable the microwave that the energy supply system 12 provides is gathered in the coaxial metal
The length of the bottom end of column 113, that is, 115 one end of hollow metal cylinder, the coaxial metal column 113 is the whole of 1/4 operation wavelength
Several times.In the embodiment of the present invention, the range of the operation wavelength does not obviously limit, and can be adjusted according to actual conditions.
Common, the operation wavelength is 50-600mm.
In order to improve the coupling efficiency of microwave, as a preferred embodiment, the metal antenna 112 is apart from described coaxial
The internal face 3-6mm of type micro-wave resonant cavity 111；And/or distance of the metal antenna 112 apart from the coaxial metal column 113
For 10-20mm.As another preferred embodiment, the radius of the coaxial-type microwave cavity 111 and the coaxial metal column
The difference of 113 radiuses should be greater than the operation wavelength of microwave, it is preferred that the radius of the coaxial-type microwave cavity 111 with it is described same
The difference of 113 radius of axis metal column is an operation wavelength；And the diameter of the coaxial metal column 113 is less than 1/4 operation wavelength, more
Preferably using 1/4 wavelength as the diameter of coaxial metal cylinder.
In the embodiment of the present invention, it has been filled between the coaxial metal column 113 and the hollow metal cylinder 115
Cermet portion 114 is adopted between the cermet portion 114 and the hollow metal cylinder 115, the coaxial metal column 113
Use soldering connection.The cermet portion 114 can make discharge portion (i.e. hollow metal cylinder 115 and its coaxial-type
The coaxial metal column 113 other than microwave cavity 111) keep apart with the coaxial-type microwave cavity 111, to put
Electric part surface forms surface wave discharge.As a preferred embodiment, the material in the cermet portion 114 is more than for dielectric constant
1 refractory ceramics dielectric constant.The preferred ceramic dielectric material does not influence while can to realize vacuum insulating
The transmission of microwave.As specific embodiment, the material in the cermet portion 114 includes but not limited to aluminium oxide, aluminium nitride, nitrogen
Change at least one of materials such as boron, silica.
Plasma source element 1 described in the embodiment of the present invention can be used as basic unit for following plasma source apparatus
In, in order to enable the coaxial metal column 113 of the bottom end of discharge portion, that is, coaxial-type microwave cavity 111 is in vacuum
Environment further, can be arranged in the bottom of the plasma source element 1 and seal so as to excite plasma discharge
Flange.
Plasma unit 1 described in the embodiment of the present invention passes through the coaxial adapter using microwave cavity system 11
13 and the metal antenna 112, by coaxial-type microwave cavity 111 described in microwave feed-in, the coaxial-type microwave cavity
111, the global design of coaxial metal column 113 and hollow metal cylinder 115 so that the coaxial metal column 115113 can incite somebody to action
Microwave energy is gathered in the hollow metal cylinder 115 on discharge cell top, generates plasma；And pass through the metal
Ceramic part 114 so that discharge cell separates with microwave feeding portion to be placed in vacuum by sealing flange discharge cell
Environment.
Plasma source element provided in an embodiment of the present invention is not required to setting resistance wire, therefore, the production of plasma environment
Life does not depend on resistance wire, prepares deficiency of the diamond in device and method so as to break away from filament CVD, avoids diamond
The short circuit that occurs in preparation process, the problems such as deposition gases ionization rate is low, sample quality is bad.In addition, importantly, this hair
The plasma source element that bright embodiment provides, passes through the coaxial-type microwave cavity, coaxial metal column, hollow metal cylinder
Structure setting can make microwave form resonance under the boundary condition effect of the coaxial-type microwave cavity, generate electric field
Superposition, and it is described coaxial that the microwave energy that the energy supply system provides is gathered in by the coaxial metal column
Metal column leans on one end of hollow metal cylinder, provides microwave energy.
And as shown in figure 4, the embodiment of the present invention additionally provides a kind of plasma source apparatus, including vacuum tank 2 and more
The above-mentioned plasma source element 1 of a dotted arrangement, wherein the vacuum tank 2 includes vacuum chamber 21, forms the vacuum chamber
Babinet 22 and the loading base station 23 being arranged in the babinet, the babinet 22 offer bleeding point 221 and air inlet 222；Institute
The roof for stating babinet 22 offers the opening communicated with the vacuum chamber 21, the hollow metal circle of the plasma source element 1
Column 115 is inserted by the opening in the vacuum chamber 21.
In the embodiment of the present invention, the plasma source apparatus generates plasma, can be used for depositing diamond layer, work
Principle is：Base material with depositing diamond is placed in vacuum tank 2, vacuum environment is formed by the bleeding point 221, is led to
It crosses the air inlet 222 and is passed through working gas, open the energy supply system 12, when the formation of the plasma source element 1
After threshold value of the electromagnetic wave electric field strength of resonance more than working gas breakdown, the working gas will be by electromagnetic wave electricity
Field breakdown forms stable plasma after the transporting of charged particle, and forms active particle.When the temperature of substrate reaches
When to a certain extent, since the lattice coefficient of base material and the lattice coefficient of diamond are close, to the activity of active particle
Key will be combined with the active bond of substrate, formed one layer of diamond thin, that is, completed forming core.Then pass through nucleation process not disconnected
It repeats, so that diamond nuclei constantly increases, to obtain certain thickness diamond thin, realizes the deposition of diamond.
Since the plasma area that single dotted plasma source element 1 can be formed is smaller, the present invention is implemented
In example, by multiple plasma source elements 1 by rational arrangement, the plasma generated can be made to be connected with each other, to
The uniform plasma cloud of large area is formed, to obtain the diamond thin of quality dense uniform.As a preferred embodiment, institute
Plasma source element is stated in matrix form arrangement (as shown in Figure 5) so that the continuous plasma source element 1 can generate
The plasma cloud of interconnection, to generate the uniform plasma environment of large area.Further, the plasma source
Spacing between unit 1 is equal, and is 10-100mm, to ensure can be connected with each other between the plasma generated, and obtains
Obtain uniform plasma cloud.
Specifically, in the embodiment of the present invention, the installation position of the bleeding point 221 and air inlet 222 does not limit explicitly
System.The hollow metal cylinder 115 of the plasma source element 1 is inserted by the opening in the vacuum chamber 21 so that is put
Electricity is partially in vacuum environment.The plasma source element 1 is sealed by the roof of sealing flange 14 and the babinet 22
Connection so that discharge portion and microwave feeding portion separate from.
In the embodiment of the present invention, the installation position of the loading base station 23 does not limit explicitly, only needs built-in described true
In cavity 21.Its set-up mode is unrestricted, can be set up directly on the bottom of the babinet 22, can also pass through its other party
In formula setting and the vacuum chamber 21.It is described that the substrate of depositing diamond is needed to be placed on the loading base station 23, the loading base
Platform 23 can carry out substrate processing is heated or cooled, i.e., can realize hot transmission between the two.Of course it is to be understood that described
The temperature of substrate can also be controlled by 23 computer heating control of loading base station by plasma heating.As preferred reality
Example is applied, the loading base station 23 is liftable loading base station.Thus, it is possible to by adjusting the height of the loading base station 23,
To adjust the heating temperature of substrate.Further, in order to which heated and plasma ambient is uniform, the loading base station 23 preferably can
The loading base station of 360 degree rotation, rotating speed is preferably in the range of 1 degrees second.In the embodiment of the present invention, the substrate material
Material is specifically including but not limited to any one of silicon chip, hard alloy, aluminium oxide, aluminium nitride etc..
Plasma source apparatus provided in an embodiment of the present invention, multiple dotted arrangements of plasma unit, can produce
The uniform plasma cloud of raw large area, to generate the uniform plasma environment of large area；It is used for diamond by being passed through
The working gas of film growth, and base reservoir temperature is adjusted, it realizes the uniform deposition of diamond thin, improves the quality of diamond.
Meanwhile the embodiment of the present invention can realize large area according to the number for needing to be arranged plasma unit of actual production scale
The deposition of diamond, and then production efficiency is improved, production cost is reduced, realizes industrialization.In addition, the embodiment of the present invention carries
The plasma source apparatus of confession, deposition gases ionization rate is high, and it is thin that excellent diamonds can be realized under 300 DEG C of low temperature condition
The uniform deposition of film will not damage electronic equipment.
Correspondingly, the embodiment of the present invention additionally provides and a kind of preparing diamond thin using above-mentioned plasma source apparatus
Method includes the following steps：
S01. substrate is placed on the loading base station, vacuumizing makes the vacuum chamber be vacuum environment, and is passed through work
Gas opens energy supply system so that the coaxial metal column of the embedded vacuum chamber generates plasma cloud；
S02. the temperature of the substrate, depositing diamond film are adjusted.
Specifically, in above-mentioned steps S01, the working gas includes but not limited to for CH4、H2、N2、Ar、O2In at least
It is a kind of.As specific embodiment, the working gas is CH4And H2.As a preferred embodiment, when the working gas is CH4With
H2When, CH4And H2Volume ratio be (1-10)：100, aforementioned proportion is excessive or the too small shape that can influence the plasma
At, and then realize the deposition of diamond thin.
In above-mentioned steps S02, the temperature of the substrate is controlled at 300-1200 DEG C, to be synthetically prepared to obtain thin diamond
Film or coating.Specifically, the temperature of the substrate can be 300 DEG C, 400 DEG C, 500 DEG C, 600 DEG C, 700 DEG C, 800 DEG C, 900 DEG C,
1000 DEG C, 1100 DEG C, the actual temps such as 1200 DEG C.The temperature of substrate described in the embodiment of the present invention can be by adjusting the loading
The height of base station is realized.
As in a particular preferred embodiment, in the top of the box, with array or matrix arrangement etc. from
Component unit can form the uniform plasma of large area.It is passed through the gas such as hydrogen and carbonaceous gas such as methane with certain proportion
Body, when reaching plasma generator by gas delivery system, electric field can puncture working gas, to be formed containing atomic hydrogen
Plasma (active bond), methane gas also form the plasma containing active particle.When the temperature of substrate reaches certain journey
When spending, since the lattice coefficient of the material of substrate base and the lattice coefficient of diamond are close, to the work of methane active particle
Property key will be combined with the active bond of substrate base, formed one layer of diamond thin, that is, complete forming core, then forming core complete with
Afterwards, it is repeated continuously nucleation process, so that diamond nuclei constantly increases, to obtain certain thickness diamond thin.
The method provided in an embodiment of the present invention for preparing diamond thin using above-mentioned plasma source apparatus, method letter
Single, production efficiency is high, and production cost is low, and obtained diamond thin is homogeneous.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (10)
1. a kind of plasma source element, including energy supply system, which is characterized in that further include microwave cavity system, institute
It includes coaxial-type microwave cavity, metal antenna, coaxial metal column, hollow metal cylinder and metal pottery to state microwave cavity system
Porcelain portion,
Wherein, the bottom of the coaxial-type microwave cavity coaxially offers the first opening, the coaxial-type microwave cavity
Top is offered to be open with the first opening out-of-alignment second；
The hollow metal cylinder is external in the first opening of the coaxial-type microwave cavity, and the hollow metal cylinder
It is coaxial with the coaxial-type microwave cavity；
The coaxial metal column is coaxially inserted in the coaxial-type microwave cavity, one end and the coaxial-type microwave cavity
Top connection, the other end is open by described first and extends outside the hollow metal cylinder；
The cermet portion is filled between the coaxial metal column and the hollow metal cylinder；
The metal antenna is inserted in the coaxial-type microwave cavity, and one end is electrically connected with the bottom, and the other end extends
Go out second opening；
Second opening is externally provided with coaxial adapter, and the coaxial-type microwave cavity by the coaxial adapter with
The energy supply system is connected.
2. plasma source element as described in claim 1, which is characterized in that the length of the coaxial metal column is 1/4 work
Make the integral multiple of wavelength.
3. plasma source element as described in claim 1, which is characterized in that the metal antenna coaxially declines apart from described
The internal face 3-6mm of wave resonance chamber；And/or
The metal antenna is apart from the coaxial metal column 10-20mm.
4. plasma source element as described in any one of claims 1-3, which is characterized in that the material in the cermet portion is
Dielectric constant is more than 1 ceramic dielectric constant.
5. a kind of plasma source apparatus, which is characterized in that appointing such as claim 1-4 including vacuum tank and multiple dotted arrangements
Plasma source element described in one, wherein the vacuum tank includes that vacuum chamber, the babinet of the formation vacuum chamber and setting exist
Loading base station in the babinet, the babinet offer bleeding point and air inlet；The roof of the babinet offer with it is described
The hollow metal cylinder of the opening that vacuum chamber communicates, the plasma source element is inserted into the vacuum chamber by the opening
In.
6. plasma source apparatus as claimed in claim 5, which is characterized in that the spacing between the plasma source element
For 10-100mm.
7. plasma source apparatus as claimed in claim 6, which is characterized in that the plasma source element is arranged in matrix form
Cloth.
8. the plasma source apparatus as described in claim 5-7 is any, which is characterized in that the plasma source element passes through
The roof of sealing flange and the babinet is tightly connected.
9. the plasma source apparatus as described in claim 5-7 is any, which is characterized in that the loading base station is liftable
Loading base station.
10. a kind of method preparing diamond thin using any plasma source apparatus of claim 5-9, including it is following
Step：
Substrate is placed on the loading base station, vacuumizing makes the vacuum chamber be vacuum environment, and is passed through working gas, opens
Energy supply system so that the coaxial metal column of the embedded vacuum chamber generates plasma cloud；
It is passed through working gas, the substrate is heat-treated, depositing diamond film.
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| WO2019000164A1 (en) * | 2017-06-26 | 2019-01-03 | 深圳市柔宇科技有限公司 | Plasma device and plasma processing method |
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| CN108770175B (en) * | 2018-05-25 | 2019-07-16 | 中国科学院微电子研究所 | The double coupled resonators of micropore micro-nano structure for microwave plasma generation device |
| CN108770174B (en) * | 2018-05-25 | 2019-07-19 | 中国科学院微电子研究所 | Microwave plasma generation device with the double coupled resonators of micropore micro-nano structure |
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| CN104427736A (en) * | 2013-08-23 | 2015-03-18 | 日新电机株式会社 | Plasma processing apparatus |
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| JP2004055614A (en) * | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | Plasma processing apparatus |
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| CN1269692A (en) * | 1999-02-02 | 2000-10-11 | 日新电机株式会社 | Plasma source |
| CN101394705A (en) * | 2008-10-23 | 2009-03-25 | 武汉工程大学 | Apparatus for generating atmosphere pressure microwave glow plasma |
| CN104427736A (en) * | 2013-08-23 | 2015-03-18 | 日新电机株式会社 | Plasma processing apparatus |
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| WO2021069620A1 (en) * | 2019-10-11 | 2021-04-15 | Neocoat Sa | Cvd reactor for manufacturing synthetic films and methods of fabrication |
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