CN106814387B - Nuclear critical accident detector - Google Patents
Nuclear critical accident detector Download PDFInfo
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- CN106814387B CN106814387B CN201710052785.0A CN201710052785A CN106814387B CN 106814387 B CN106814387 B CN 106814387B CN 201710052785 A CN201710052785 A CN 201710052785A CN 106814387 B CN106814387 B CN 106814387B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/203—Measuring radiation intensity with scintillation detectors the detector being made of plastics
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Abstract
The invention discloses a nuclear critical accident detector, which comprises a plastic scintillation crystal, a photomultiplier, an ionization chamber, a high-voltage power supply and a signal detection circuit, wherein the plastic scintillation crystal is arranged on the photoelectric multiplier; the signal detection circuit comprises a weak current amplifier, a current-voltage conversion unit, an ADC acquisition unit and a power circuit supporting the normal operation of the units; the plastic scintillation crystal is connected with a photomultiplier, and the photomultiplier is connected with a high-voltage power supply and a signal detection circuit; the ionization chamber is connected with a high-voltage power supply and a signal detection unit. The invention effectively improves the alarm reliability of the nuclear critical event.
Description
Technical Field
The invention belongs to the technical field of nuclear critical event detection, and particularly relates to a nuclear critical accident detector
Background
The critical state is a state in which a nuclear fission reaction continues to progress by releasing neutrons from the nuclear reaction.
If a neutron chain reaction, which is a self-sustaining or divergent neutron chain reaction and is accidentally generated by fissile materials such as uranium or plutonium, reaches a certain amount and is accumulated in a certain portion, a critical state occurs, and thus a nuclear fission reaction occurs quickly.
Since the nuclear critical events are extremely short in duration (milliseconds) and generate extremely large radiation fields, various factors combine to cause common area radiation detectors to fail. Therefore, the nuclear critical alarm must consider the response time of the detector, the measurement range and other limit conditions. Meanwhile, as an integral system, the stability and reliability of a critical alarm system are also important, any missed alarm or delayed alarm can cause unforeseen safety accidents, and any false alarm can cause serious economic loss and personnel panic.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a nuclear critical accident detector aiming at the defects in the common technology, which has the advantages of fast response time, wide measurement range, high reliability and convenient popularization and use.
In order to solve the technical problems, the invention adopts the technical scheme that:
a nuclear critical accident detector comprises a first plastic scintillator for measuring low-dose gamma rays, a first photomultiplier for collecting light signals of the first plastic scintillator, a second plastic scintillator for measuring medium-dose gamma rays, a second photomultiplier for collecting light signals of the second plastic scintillator, an ionization chamber for measuring high-dose gamma rays, a weak current amplifier for amplifying signals of the ionization chamber, and a high-voltage power supply for supplying high-voltage power to the first photomultiplier, the second photomultiplier and the ionization chamber, wherein the high-voltage power supply is connected with the weak current amplifier, the first photomultiplier and the second photomultiplier; an MCU control unit is arranged in the signal processing unit, and the MCU control unit sends a high-voltage control instruction and a low-voltage control instruction to a high-voltage module in the high-voltage power supply through a DA (digital-to-analog) conversion unit respectively and reads the AD value of the first photomultiplier and the AD value of the second photomultiplier respectively; simultaneously reading the AD value of the ionization chamber and the temperature value of the temperature control unit; judging whether to perform temperature compensation by the MCU according to the acquired temperature value; if the obtained temperature value is within a temperature threshold value set in the MCU control unit, the obtained AD numerical value of the first photomultiplier, the obtained AD numerical value of the second photomultiplier and the obtained AD numerical value of the ionization chamber are processed, and the processed data are sent to the probe processing plate through an RS485 serial port; if the obtained temperature value is not within the temperature threshold value set in the MCU control unit, temperature compensation is firstly carried out, when the temperature rises to be within the temperature threshold value set in the MCU control unit, the obtained AD numerical value of the first photomultiplier, the obtained AD numerical value of the second photomultiplier and the obtained AD numerical value of the ionization chamber are processed, and the processed data are sent to the probe processing board through the RS485 serial port.
The nuclear critical detector designed by the invention has the advantages of quick response time, wide measurement range, high reliability and convenient popularization and use.
Drawings
FIG. 1 is a block diagram of the frame of the present invention;
fig. 2 is a schematic diagram of an embodiment of the present invention.
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
A nuclear critical accident detector comprises a first plastic scintillator 3 for measuring low-dose gamma rays, a first photomultiplier 2 for collecting optical signals of the first plastic scintillator 3, a second plastic scintillator 5 for measuring medium-dose gamma rays, a second photomultiplier 4 for collecting optical signals of the second plastic scintillator 5, an ionization chamber 101 for measuring high-dose gamma rays, a weak current amplifier 7 for amplifying signals of the ionization chamber 101, and a high-voltage power supply 8 for supplying high-voltage power to the first photomultiplier 2, the second photomultiplier 4 and the ionization chamber 101, wherein the high-voltage power supply 8 is connected with the weak current amplifier 7, the first photomultiplier 2 and the second photomultiplier 5, and a signal processing unit 1 is respectively connected with the first photomultiplier 2, the second photomultiplier 5 and the high-voltage power supply; an MCU control unit 102 is arranged in the signal processing unit 1, the MCU control unit 102 sends a high-voltage control instruction and a low-voltage control instruction to the high-voltage module through a DA analog-to-digital conversion unit respectively, and the AD value of the first photomultiplier and the AD value of the second photomultiplier 5 are read respectively; simultaneously reading the AD value of the ionization chamber 101 and the temperature value of the temperature control unit 101; judging whether to perform temperature compensation or not by the MCU control unit 102 according to the obtained temperature value; if the obtained temperature value is within the temperature threshold value set in the MCU control unit 102, the obtained AD value of the first photomultiplier tube 2, the obtained AD value of the second photomultiplier tube, and the obtained AD value of the ionization chamber 101 are processed, and the processed data are sent to the probe processing board 105 through the RS485 serial port; if the obtained temperature value is not within the temperature threshold set in the MCU control unit 102, temperature compensation is performed first, and when the temperature rises to within the temperature threshold set in the MCU control unit 102, the obtained AD value of the first photomultiplier tube 2, the obtained AD value of the second photomultiplier tube 5, and the obtained AD value of the ionization chamber 101 are processed, and the processed data are sent to the probe processing board 105 through the RS485 serial port.
The MCU control unit 102 selects a four-channel 16-bit ADC chip with the highest throughput rate of 250Ksps, the serial output is sampled in a circulating mode, and the four channels are respectively as follows: PMT1, PMT2, ION, high voltage module voltage monitoring. PMT1 is the AD value for the first photomultiplier tube 2, PMT2 is the AD value for the second photomultiplier tube 5, and ION is the AD value for the ionization chamber 101;
the range is judged as follows:
showing PTM1 detector data
PTM2<3mGy/h and ION <1Gy/h
② displaying PTM2 detector data
PTM2>4mGy/h and ION <1Gy/h
Displaying ION detector data
PTM2>1Gy/h or ION >5 Gy-
In the parameter setting mode, three independent backgrounds, three independent sensitivities and three independent high voltages are set. Three of the high voltage settings may be borrowed. Temperature compensation is added without gear shifting, one of the detectors is compensated, and all three detectors are compensated. And (4) according to the test result, adding a higher level in the discussion, and modifying the parameters.
Required measuring range of each part of detector
1) The PTM1 requires the measuring range to be 0.1 mu Gy/h-4 mGy/h,
2) the PTM2 requires the measuring range to be 1 mGy/h-1 Gy/h,
3) the ION requires a measurement range of 100 mGy/h to 300 Gy/h.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and all simple modifications, changes and equivalent structural changes made to the above embodiment according to the technical spirit of the present invention still fall within the protection scope of the technical solution of the present invention.
Claims (1)
1. A nuclear criticality accident detector characterized by: the device comprises a first plastic scintillator for measuring low-dose gamma rays, a first photomultiplier for collecting light signals of the first plastic scintillator, a second plastic scintillator for measuring medium-dose gamma rays, a second photomultiplier for collecting light signals of the second plastic scintillator, an ionization chamber for measuring high-dose gamma rays, a weak current amplifier for amplifying signals of the ionization chamber, and a high-voltage power supply for supplying high-voltage power to the first photomultiplier, the second photomultiplier and the ionization chamber, wherein the high-voltage power supply is connected with the weak current amplifier, the first photomultiplier and the second photomultiplier; an MCU control unit is arranged in the signal processing unit, and the MCU control unit sends a high-voltage control instruction and a low-voltage control instruction to a high-voltage module in the high-voltage power supply through a DA (digital-to-analog) conversion unit respectively and reads the AD value of the first photomultiplier and the AD value of the second photomultiplier respectively; simultaneously reading the AD value of the ionization chamber and the temperature value of the temperature control unit; judging whether to perform temperature compensation by the MCU according to the acquired temperature value; if the obtained temperature value is within a temperature threshold value set in the MCU control unit, the obtained AD numerical value of the first photomultiplier, the obtained AD numerical value of the second photomultiplier and the obtained AD numerical value of the ionization chamber are processed, and the processed data are sent to the probe processing plate through an RS485 serial port; if the obtained temperature value is not within the temperature threshold value set in the MCU control unit, temperature compensation is firstly carried out, when the temperature rises to be within the temperature threshold value set in the MCU control unit, the obtained AD numerical value of the first photomultiplier, the obtained AD numerical value of the second photomultiplier and the obtained AD numerical value of the ionization chamber are processed, and the processed data are sent to the probe processing board through the RS485 serial port.
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| CN106814387B true CN106814387B (en) | 2020-12-08 |
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| CN108231222B (en) * | 2017-12-21 | 2019-09-17 | 中核北方核燃料元件有限公司 | One seed nucleus criticality alarm system time of fire alarming verifies device and method |
| CN109657905A (en) * | 2018-11-12 | 2019-04-19 | 中国辐射防护研究院 | A kind of evaluation method of the criticality accident Environment release source item of mox fuel |
| CN112116795B (en) * | 2020-08-04 | 2021-12-17 | 中国原子能科学研究院 | Method and device for testing instantaneous response of nuclear critical accident alarm |
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| CN2236137Y (en) * | 1994-07-16 | 1996-09-25 | 四川材料与工艺研究所 | Critical accident gamma alarm |
| JP4387994B2 (en) * | 2005-07-22 | 2009-12-24 | 株式会社東芝 | Criticality alarm device and test method thereof |
| CN201600459U (en) * | 2010-02-10 | 2010-10-06 | 陕西卫峰核电子有限公司 | Digital gamma radiation detector |
| JP5106584B2 (en) * | 2010-06-14 | 2012-12-26 | 株式会社東芝 | Radiation detector |
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