CN106813783B - Resistive sensor array readout circuit and its reading method based on operational amplifier - Google Patents
Resistive sensor array readout circuit and its reading method based on operational amplifier Download PDFInfo
- Publication number
- CN106813783B CN106813783B CN201710044884.4A CN201710044884A CN106813783B CN 106813783 B CN106813783 B CN 106813783B CN 201710044884 A CN201710044884 A CN 201710044884A CN 106813783 B CN106813783 B CN 106813783B
- Authority
- CN
- China
- Prior art keywords
- resistance
- alignment
- resistive sensor
- port
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000005611 electricity Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000003542 behavioural effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000035807 sensation Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VEMKTZHHVJILDY-UHFFFAOYSA-N resmethrin Chemical compound CC1(C)C(C=C(C)C)C1C(=O)OCC1=COC(CC=2C=CC=CC=2)=C1 VEMKTZHHVJILDY-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Abstract
The resistive sensor array readout circuit based on operational amplifier that the invention discloses a kind of, the resistive sensor array are classified as the resistive sensor array of common row line and alignment;The reading circuit includes: measuring resistance row comprising a lineNA measuring resistance is added in the resistive sensor array, thus obtain new a shared line and alignment (M+1) ×NElectric resistance array;(M+1) a operational amplifier, with electric resistance array (M+1) line corresponds, and the inverting input terminal of each operational amplifier, output end are connect after being connected to a little with its corresponding line;Controller, have at least (M+ 1) a I/O port and at leastNA ADC sample port, therein (M+ 1) a I/O port and it is described (M+1) non-inverting input terminal of a operational amplifier connects one to one, thereinNA ADC sample port and the new resistance arrayNAlignment connects one to one.The invention also discloses the reading methods of the reading circuit.The present invention has better measurement accuracy.
Description
Technical field
The present invention relates to a kind of resistive sensor array readout circuit and its reading methods, belong to sensor technical field.
Background technique
Array sensing device is exactly the multiple sensing elements that will have same performance, is combined according to the structure of two-dimensional array
Together, it can change or generate corresponding form and feature by detecting the Parameters variation focused on array.This is special
Property is widely used in bio-sensing, temperature tactile and thermal imaging based on infrared sensor etc. etc..
Resistive sensor array is widely used in Simulations of Infrared Image system, power tactilely-perceptible and temperature tactilely-perceptible.
By taking temperature tactile as an example, the transmitting of the heat as involved in temperature sensation sensing device and the perception of temperature, to obtain the heat of object
Attribute, device propose higher requirement to temperature measurement accuracy and resolution ratio, and in order to further obtain object different location
The hot attribute that material is shown then proposes higher spatial resolving power requirement to temperature sensation sensing device.
The quality or resolution ratio of resistive sensor array are to need to increase by the quantity of the sensor in increase array
's.However, the scale when sensor array increases, information collection and signal processing to all components are just become difficult.One
As in the case of, the progress of all sensors of a M N array is accessed one by one, and each sensor tool there are two end
Mouthful, 2 × M × N root connecting line is needed altogether.Not only line is complicated for this connection type, but also can only select single electricity to be measured every time
Resistance measures, and scanning speed is slow, and the period is long, low efficiency.For reduce device interconnection complexity, can introduce shared line with
The two-dimensional array of alignment, by scanning monitor in conjunction with single operational amplification circuit and multiple selector, but it is necessarily increased
The complexity of circuit, therefore scanning times how are reduced, reduce circuit complexity just at the problem for needing to capture together.
Detection about resistance-type sensor array is studied, and R.S.Saxena in 2006 et al. is proposed based on infrared thermal imaging
Array technology, test structure be based on resistance sensing network configure, based on resistance it is linear with it is homogeneity using compensate
Network theorem and stacking network theorem develop the theoretical model of the resistor network.Use 16 × 16 array network bolometer battle arrays
Column verifying, is used only 32 pins, it has already been proven that, which can be effective for the minor change of device failure or device value
It differentiates, it has certain precision, but still remains technological deficiency in detection speed.Y.J.Yang in 2009 et al. is proposed
The temperature and tactile sensing array of one 32 × 32 array, for the artificial skin of mechanical arm, the circuit is in order to guarantee to detect
Precision, the interference of non-testing resistance in mask array all introduce operational amplification circuit in each column of array, and circuit is complicated
Degree greatly increases, and the interference of its internal resistance can not be avoided effectively, detection efficiency, circuit complexity and avoids in electronic device
The interference of portion's equivalent internal resistance becomes maximum technical bottleneck.
There is pertinent literature to propose a kind of to read by establishing sensor array and solving the method for resistor matrix equation
Resistance in array out.The first row of resistive array is set measuring resistance by it, is acquired on corresponding column direction using ADC
Column voltage data are grounded the first row successively to last line, remaining row input high level, logical in the process every time
The voltage for crossing respective column when ADC produces corresponding row ground connection, lists matrix equation, finds out resistance and measuring resistance in each column respectively
Relationship and solution.Although this method is largely avoided crossfire, while reducing circuit complexity, detects speed
Higher, computational complexity is lower, but does not account for the presence of its equivalent internal resistance when exporting low and high level by single-chip microcontroller, simultaneously
Resistance range is confined in a certain section in array, for a wide range of resistance measurement problem again without solution,
So also needing to seek one kind under the premise of not improving computational complexity, voltage output equivalent internal resistance can be effectively avoided
The method of interference, while being also required to further expand in resistance range.
Summary of the invention
Technical problem to be solved by the present invention lies in overcoming the shortage of prior art, propose that resistive sensor array reads electricity
Road and its reading method may be implemented to all resistive sensors in the resistive sensor array of the two dimension of shared line and alignment
The quick detection of (physical quantity sensitive resistance), while output resistance when can effectively eliminate controller I/O port direct driving circuit
Influence, improve measurement accuracy, while expanding measuring range.
The present invention specifically uses following technical scheme to solve above-mentioned technical problem:
Resistive sensor array readout circuit based on operational amplifier, the resistive sensor array be classified as common row line and
The resistive sensor array of M × N of alignment;The reading circuit includes:
Measuring resistance row comprising measuring resistance known to row of N resistance value is added as new a line in described
In resistive sensor array, to obtain (M+1) × N electric resistance array of new a shared line and alignment;
(M+1) a operational amplifier, (M+1) item with (M+1) × N electric resistance array of the new shared line and alignment
Line corresponds, and the inverting input terminal of each operational amplifier, output end are connect after being connected to a little with its corresponding line;
Controller has at least (M+1) a I/O port and at least N number of ADC sample port, (M+1) a IO therein
Port and the non-inverting input terminal of (M+1) a operational amplifier connect one to one, N number of ADC sample port therein and institute
N alignment for stating (M+1) × N electric resistance array of new shared line and alignment connects one to one.
The reading method of reading circuit as described above, comprising the following steps:
The I/O port output low level that step 1, controller control are connect with measuring resistance row, and remaining M I/O port
Export high level;Controller acquires the voltage of N root alignment by the N number of ADC sample port connecting with N alignment at the same time,
The column voltage of j-th strip alignment is denoted as V at this timesj, j=1,2 ..., N;
In formula, RijIndicate the resistance value for the resistive sensor that the i-th row jth arranges in the resistive sensor array of two dimension, Rsj
Indicate to access the resistance value of the measuring resistance of jth column in the resistive sensor array of two dimension, VccIndicate controller I/O port institute
The high level voltage of output.
Compared with prior art, the invention has the following advantages:
(1) measurement method of the present invention uses (M+1) a operational amplifier, it is possible to prevente effectively from the connection of controller I/O port is negative
The influence of the output resistance as caused by driving current when load.Due to controller (M+1) a I/O port respectively with corresponding row
The non-inverting input terminal of operational amplifier is connected, and driving current is 0 when output level, and then avoids the end controller general digital IO
The influence of the output internal resistance of mouth, improves physical quantity sensitive resistance in resistive sensor array under the premise of low computational complexity
Measurement accuracy.
(2) measurement method of the present invention passes through N number of ADC sampling channel of controller, realizes that current drive level be low electricity
The disposable voltage sample of flat resistance row.Due to N number of ADC sampling channel N alignment with the resistive sensor array of two dimension respectively
It is connected, it is low level simultaneously to the application of measuring resistance row, high level is applied to other rows, N number of standard voltage value can be collected, then
Low level is applied to a line any in M × N physical quantity sensitive resistance array, while other rows including measuring resistance row are applied
Increase level, collect N number of voltage value corresponding to the row, finally obtains M × N number of voltage value, the height exported in conjunction with controller
Level VccAnd N number of standard voltage value, the resistance value of all physical quantity sensitive resistances in the row can be disposably acquired, and then select one by one
Fixed remaining row to be measured, is finally completed the measurement of all measured physical quantity sensitive resistances in array, and finally improve measuring speed.
(3) additional devices that measurement method of the present invention needs only include (M+1) a operational amplifier and N number of measuring resistance,
Under the premise of ensuring measurement accuracy, reduce the quantity and circuit complexity of line between device.
Detailed description of the invention
Fig. 1 is the resistive sensor array structure schematic diagram of M × N two dimension to share line and alignment;
Fig. 2 is the circuit diagram of existing resistive sensor array reading circuit;
Fig. 3 is the circuit diagram of reading circuit of the present invention;
The current direction signal that Fig. 4 is the drive level of measuring resistance row when being low level in array on each column column direction
Figure;
Fig. 5 be measuring resistance row drive level be low level when the 1st column resistor current rule rough schematic view;
The electric current that Fig. 6 is the drive level of the 1st row physical quantity sensitive resistance when being low level in array on each column column direction
Flow to schematic diagram;
Fig. 7 is the drive level of the 1st row physical quantity sensitive resistance when being low level, and the simplification of the 1st column resistor current rule is shown
It is intended to;
Fig. 8 be the i-th row physical quantity sensitive resistance drive level be low level when the 1st column resistor current rule simplification show
It is intended to.
Specific embodiment
Technical solution of the present invention is described in detail with reference to the accompanying drawing:
For reduce resistive sensor array device interconnection complexity, there is researcher to propose shared line and alignment
Two-dimensional array structure.Fig. 1 shows the structure of the resistive sensor array of the two dimension of shared line and alignment.As shown in Figure 1, the biography
Sensor array includes two groups of orthogonal lines respectively as shared line and shared alignment and the two-dimensional structure distribution according to M × N
Physical quantity sensitive resistance (i.e. resistive sensor) array, each physical quantity sensitive resistance one end in array connects corresponding row
Line, the other end connect corresponding alignment, and each resistance in array has the combination of unique line and alignment, are in the i-th row
The resistance R of jth columnijIt indicates, wherein M is line number, and N is columns.Two-dimensional structure according to M × N may make using this kind of structure
The array of distribution, it is only necessary to which M+N root line number can guarantee that any one specific resistive element can be by controlling line
It is accessed with the corresponding combination of alignment, therefore required session number is greatly decreased.
Fig. 2 shows that a kind of existing resistive sensor array reading circuit, the reading circuit are the measurement of single-wire drive line
Method.As shown in Fig. 2, in the circuit, being connect before sharing the first row of the resistive sensor array of M × N two dimension of line and alignment
Measuring resistance R known to row of N resistance value is enteredsj, j=1,2 ..., N, measuring resistance row is together with resistive sensor array
Constitute (M+1) × N electric resistance array of new a shared line and alignment.In the reading circuit, every row of electric resistance array
Between line and reading circuit only have a connecting line, controller by I/O port directly with each connecting line pair of electric resistance array
It should be connected, and by the voltage on its ADC sample port acquisition alignment.The circuit is under ideal working condition, controller output electricity
When putting down to each line, output resistance existing for each I/O port is ignored, thus line xrs、xr1、xr2、…、xrMEnd
Voltage is the level value V of controller I/O port outputccOr 0V.Collected column line voltage value and each when according to scanning array
Voltage value on line can list equation solution according to Kirchhoff's law.And the circuit is controlled in real work
The output level of device I/O port is related with driving current, and therefore, above-mentioned factor leads to the voltage value and V on each lineccOr
Person 0V is unequal, and the measurement error of resistance in array is made to become larger.
In order to overcome Fig. 2 reading circuit there are the shortcomings that, eliminate controller I/O port direct driving circuit when output electricity
The influence of resistance, the invention proposes a kind of using operational amplifier as the method for voltage follow driver, to eliminate I/O port
Output resistance when as driving circuit influences.
Fig. 3 shows the circuit diagram of the resistive sensor array reading circuit of the present invention, as shown in Figure 3 comprising add
Measuring resistance R known to row of N resistance value in the resistive sensor array of M × N two dimension for sharing line and alignmentsj, j=
1,2 ..., N, measuring resistance row constitute (M+1) × N electricity of a new shared line and alignment together with resistive sensor array
Hinder array;For ease of calculation, the resistance value of N number of measuring resistance is preferably identical.Reading circuit of the present invention further includes control
Device and corresponding to the every a line of electric resistance array altogether (M+1) a operational amplifier.Unlike Fig. 2 circuit, the present invention is resistance
Every line of array is respectively provided with a corresponding operational amplifier.As shown in figure 3, the reverse phase of each operational amplifier is defeated
Enter end, connect with its corresponding line by a connecting line after output end is connected to a bit, the operational amplifier of every a line
Non-inverting input terminal is connected with corresponding controller I/O port.In real work, acted on according to the void of operational amplifier is disconnected,
Its non-inverting input terminal electric current is 0, therefore does not have driving current when the I/O port output level of controller, can eliminate I/O port and directly drive
The influence of existing output resistance when dynamic circuit.Meanwhile under the premise of the driving capability of operational amplifier is enough, according to its void
Short effect, the voltage follow operational amplifier non-inverting input terminal voltage change of current each line, i.e., each row in array
Voltage on line is equal to the voltage V of controller I/O port outputccOr 0V.It thereby realizes controller I/O port and directly drives electricity
The virtual isolation of the lead resistance of existing output resistance, drive connection line when road, and then improve measurement accuracy.
The reading method of reading circuit of the present invention is specifically according to the following steps:
The I/O port output low level that step 1, controller control are connect with measuring resistance row, and remaining M I/O port
Export high level;Controller acquires the voltage of N root alignment by the N number of ADC sample port connecting with N alignment at the same time,
The column voltage of j-th strip alignment is denoted as V at this timesj, j=1,2 ..., N;
In formula, RijIndicate the resistance value for the resistive sensor that the i-th row jth arranges in the resistive sensor array of two dimension, Rsj
Indicate to access the resistance value of the measuring resistance of jth column in the resistive sensor array of two dimension, VccIndicate controller I/O port institute
The high level voltage of output.
Fig. 4 is shown in measuring device of the present invention when the drive level of measuring resistance row is low level, every in array
Current direction on column column direction, the s behavioral standard resistance row of electric resistance array in figure, remaining M behavior measured physical quantity are sensitive
Resistance row.The I/O port that controller control corresponds to measuring resistance row exports low level (0), remaining M high electricity of I/O port output
Flat (Vcc), M high level VccOperational amplifier through corresponding row is respectively by line xr1、xr2、…、xrMAct on the 1st column resistance
R11、…、RM1, the 2nd column resistance R12、…、RM2..., Nth column resistance R1N、…、RMN, finally it is collected to the corresponding standard electric of each column
Hinder Rs1、…、RsN, through xrsOutflow.Meanwhile controller controls N number of ADC sample port and acquires voltage value on N number of alignment, that is, marks
Quasi- voltage Vs1、Vs2、…、VsN。
By taking the 1st column resistance as an example, the 1st column resistor currents rule when being low level that Fig. 5 is the drive level of measuring resistance row
Rough schematic view, the drive level of array Plays resistance row is low level, high level VccIt is respectively acting on the 1st column resistance
R11、…、RM1By Rs1To ground terminal, Vs1The standard voltage value of 1st column alignment when for measuring resistance row drive level being low level,
According to Kirchhoff's current law (KCL), obtain
The electric current that Fig. 6 is the drive level of the 1st row physical quantity sensitive resistance when being low level in array on each column column direction
Flow to schematic diagram.The s behavioral standard resistance row of electric resistance array in figure, remaining M behavior measured physical quantity sensitive resistance row.The figure
By taking the drive level of the 1st row physical quantity sensitive resistance is low level as an example, the I/O port that controller control corresponds to the 1st row is exported
Low level (0) controls remaining M row I/O port output high level (Vcc), M high level VccOperational amplifier point through corresponding row
Not by line xrs、xr2、…、xrMAct on the 1st column resistance Rs1、R21、…、RM1, the 2nd column resistance Rs2、R22、…、RM2..., N
Column resistance RsN、R2N、…、RMN, finally it is collected to the corresponding resistance R of each column11、…、R1N, through xr1Outflow.Meanwhile controller controls
N number of ADC sample port acquires the voltage value on N number of alignment, i.e., when the drive level of the 1st row physical quantity sensitive resistance is low level
Column voltage V11、V12、…、V1N。
By taking the 1st column resistance as an example, Fig. 7 be the 1st row physical quantity sensitive resistance drive level be low level when the 1st column resistance
The rough schematic view of electric current rule, the drive level of the 1st row physical quantity sensitive resistance is low level, high level V in arrayccRespectively
Act on the 1st column resistance Rs1、R21、…、RM1By R11To ground terminal, V111st column alignment when for the 1st row drive level being low level
Voltage value obtained according to Kirchhoff's current law (KCL)
Two equatioies as obtained in Fig. 5, Fig. 7, converted can be obtained respectively
Two formulas above are subtracted each other, R can be obtained11Resistance value be
By taking the 1st column resistance as an example, Fig. 8 is that the drive level of the i-th row physical quantity sensitive resistance row of the invention is low level
When the 1st column resistor current rule rough schematic view, the drive level of the i-th row physical quantity sensitive resistance is low level in array,
High level VccIt is respectively acting on the 1st column resistance Rs1、R11、…、RM1By Ri1To ground terminal, Vi1It is low electricity for the i-th row drive level
The usually voltage value of the 1st column alignment is obtained according to Kirchhoff's current law (KCL)
Likewise, the 1st column resistance R in array can be obtainedi1Resistance value, i=1,2 ..., M and the 1st column any one
The expression formula of testing resistance.
When due to applying low level to certain row in two-dimentional electric resistance array every time, N number of sample port of controller is adopted simultaneously
Collect the voltage value on N root alignment, successively the jth column of two-dimentional electric resistance array is analyzed as a result, j=1,2 ..., N can be obtained
Into array, the resistance value of M testing resistance of jth column is
In above formula, i=1,2 ..., M.
Following general formula expression can be used in above-mentioned calculation method:
By analyzing above, the resistance value of all physical quantity sensitive resistances in resistive sensor array, Jin Ertong may finally be obtained
Cross the physical quantity that resistance-physical quantity converts available sensitive resistance present position.
It is emphasized that: above-mentioned row, column is relative concept, and those skilled in the art can exchange it completely, equally
It can reach corresponding technical effect.
Claims (2)
1. the resistive sensor array readout circuit based on operational amplifier, the resistive sensor array is classified as common row line and column
The resistive sensor array of M × N of line;It is characterized in that, the reading circuit includes:
Measuring resistance row comprising measuring resistance known to row of N resistance value is added as new a line in described resistive
In sensor array, to obtain (M+1) × N electric resistance array of new a shared line and alignment;
(M+1) a operational amplifier, (M+1) line with (M+1) × N electric resistance array of the new shared line and alignment
It corresponds, what the inverting input terminal of each operational amplifier, output end be can not ignore after being connected to a little by a resistance
Connecting line is connect with its corresponding line;
Controller has at least (M+1) a I/O port and at least N number of ADC sample port, (M+1) a I/O port therein
It connects one to one with the non-inverting input terminal of (M+1) a operational amplifier, N number of ADC sample port therein and described new
Shared line and the N alignment of (M+1) × N electric resistance array of alignment connect one to one.
2. the reading method of reading circuit as described in claim 1, which comprises the following steps:
The I/O port output low level that step 1, controller control are connect with measuring resistance row, and remaining M I/O port output
High level;Controller acquires the voltage of N root alignment by the N number of ADC sample port connecting with N alignment at the same time, at this time
The column voltage of j-th strip alignment is denoted as Vsj, j=1,2 ..., N;
Step 2, controller successively control the I/O port being connect with the i-th row of the resistive sensor array of M × N two dimension and export low electricity
It is flat, and remaining M I/O port exports high level;Controller passes through N number of ADC sample port for connecting with N alignment at the same time
The voltage of N root alignment is acquired, the column voltage of j-th strip alignment is denoted as V at this timeij, i=1,2 ..., M, j=1,2 ..., N;
Step 3, the resistance value that each resistive sensor in the resistive sensor array of two dimension is calculated using following formula:
In formula, RijIndicate the resistance value for the resistive sensor that the i-th row jth arranges in the resistive sensor array of two dimension, RsjIt indicates
Access the resistance value for the measuring resistance that jth arranges in the resistive sensor array of two dimension, VccIndicate that controller I/O port is exported
High level voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710044884.4A CN106813783B (en) | 2017-01-20 | 2017-01-20 | Resistive sensor array readout circuit and its reading method based on operational amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710044884.4A CN106813783B (en) | 2017-01-20 | 2017-01-20 | Resistive sensor array readout circuit and its reading method based on operational amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106813783A CN106813783A (en) | 2017-06-09 |
CN106813783B true CN106813783B (en) | 2019-10-15 |
Family
ID=59111178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710044884.4A Active CN106813783B (en) | 2017-01-20 | 2017-01-20 | Resistive sensor array readout circuit and its reading method based on operational amplifier |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106813783B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107063312B (en) * | 2017-01-20 | 2019-08-13 | 东南大学 | Resistive sensor array measuring device and method |
CN109059969A (en) * | 2018-08-13 | 2018-12-21 | 中国科学院电子学研究所 | A kind of resistive sensor array reading circuit and measurement method |
JP6809519B2 (en) * | 2018-08-31 | 2021-01-06 | Tdk株式会社 | Resistor array circuit, resistor array circuit unit and infrared sensor |
CN109489810A (en) * | 2018-09-21 | 2019-03-19 | 中国科学院紫金山天文台 | The multichannel read-out system of terahertz wave band large scale array graphene detector |
CN115628761B (en) * | 2022-09-30 | 2023-10-13 | 华南理工大学 | Low-power-consumption anti-disturbance resistance type sensor and wearable equipment |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4374384A (en) * | 1980-08-28 | 1983-02-15 | Westinghouse Electric Corp. | Matrix encoder for resistive sensor arrays |
KR20090030768A (en) * | 2007-09-21 | 2009-03-25 | 주식회사 오카스 | Infrared signal detection circuit using bolometer and detection method |
CN103925934A (en) * | 2014-04-30 | 2014-07-16 | 东南大学 | Detection circuit of resistance sensing array strengthening voltage feedback |
CN105628061A (en) * | 2016-01-28 | 2016-06-01 | 东南大学 | Resistive sensor array fast readout circuit based on two-wire system isopotential method |
CN105716633A (en) * | 2016-01-28 | 2016-06-29 | 东南大学 | Test circuit for resistive sensor array based on two-wire system isopotential method |
CN107063312A (en) * | 2017-01-20 | 2017-08-18 | 东南大学 | Resistive sensor array measurement apparatus and method |
-
2017
- 2017-01-20 CN CN201710044884.4A patent/CN106813783B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4374384A (en) * | 1980-08-28 | 1983-02-15 | Westinghouse Electric Corp. | Matrix encoder for resistive sensor arrays |
KR20090030768A (en) * | 2007-09-21 | 2009-03-25 | 주식회사 오카스 | Infrared signal detection circuit using bolometer and detection method |
CN103925934A (en) * | 2014-04-30 | 2014-07-16 | 东南大学 | Detection circuit of resistance sensing array strengthening voltage feedback |
CN105628061A (en) * | 2016-01-28 | 2016-06-01 | 东南大学 | Resistive sensor array fast readout circuit based on two-wire system isopotential method |
CN105716633A (en) * | 2016-01-28 | 2016-06-29 | 东南大学 | Test circuit for resistive sensor array based on two-wire system isopotential method |
CN107063312A (en) * | 2017-01-20 | 2017-08-18 | 东南大学 | Resistive sensor array measurement apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
CN106813783A (en) | 2017-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106813783B (en) | Resistive sensor array readout circuit and its reading method based on operational amplifier | |
CN103925934B (en) | A kind of testing circuit strengthening the resistive sensor array of Voltage Feedback | |
CN105675024B (en) | A kind of data read method, the device of resistive sensor array | |
CN105424095B (en) | The quick reading circuit and its reading method of the resistive sensor array of two dimension | |
CN107063312B (en) | Resistive sensor array measuring device and method | |
CN106597111B (en) | High-precision two-dimensional electric resistance array reading circuit | |
CN101804581A (en) | Implementation method of automatic compensation for thermal deformation of machine tool | |
CN106500847B (en) | A kind of rapid survey circuit of the resistive sensor array of two dimension | |
CN105628061B (en) | The resistive quick reading circuit of sensor array and its reading method, sensor-based system | |
CN203364966U (en) | High-precision and high-sensitivity optical power meter with large dynamic range | |
CN104569049B (en) | A kind of high power LED device die bond layer heat dispersion fast evaluation method of no cold drawing | |
CN104062025B (en) | A kind of energy-conservation automatic AD temperature acquisition monitoring system | |
CN106841812B (en) | Anti- power jitter two dimension electric resistance array reading circuit | |
CN106597110B (en) | The two-dimentional quick reading circuit of electric resistance array | |
CN104569065B (en) | A kind of fast evaluation method of high power LED device die bond layer heat dispersion | |
CN105716633B (en) | Resistive Sensor array circuit and its method of testing, sensor-based system | |
CN106500736B (en) | A kind of linear reading circuit of the resistive sensor array of two dimension | |
CN105651315B (en) | The resistive quick reading circuit of sensor array and its reading method, sensor-based system | |
CN106197771A (en) | A kind of computer based pressure measurement system | |
CN110631609A (en) | Resistive sensor array rapid reading circuit based on two-wire system equipotential method | |
CN105444817B (en) | The reading circuit and its reading method of resistive compound sensor array | |
CN110617842A (en) | Resistive sensor array rapid reading circuit based on two-wire system equipotential method | |
CN106595721B (en) | The quick reading circuit of improved two dimension electric resistance array | |
CN113191075A (en) | Photovoltaic array fault diagnosis method based on improved goblet sea squirt group algorithm | |
CN106595720B (en) | The linear reading circuit of resistive sensor array based on double feedback transmitters and its reading method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |