CN106811727A - The manufacture method of sputter equipment, the manufacture method of film and electronic device - Google Patents

The manufacture method of sputter equipment, the manufacture method of film and electronic device Download PDF

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Publication number
CN106811727A
CN106811727A CN201611095077.7A CN201611095077A CN106811727A CN 106811727 A CN106811727 A CN 106811727A CN 201611095077 A CN201611095077 A CN 201611095077A CN 106811727 A CN106811727 A CN 106811727A
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CN
China
Prior art keywords
luminous intensity
film
sputter equipment
gas
light introducing
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CN201611095077.7A
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Chinese (zh)
Inventor
中村谕
林秀治
竹见崇
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Canon Tokki Corp
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Tokki Corp
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Publication of CN106811727A publication Critical patent/CN106811727A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention provides the manufacture method of a kind of sputter equipment, the manufacture method of film and electronic device, can carry out PEM controls using a luminous intensity detector and a controlling organization for multiple light introducing sections.A kind of sputter equipment, it forms film in vacuum chamber on by film-forming component, and the sputter equipment possesses：Negative electrode, it is provided with target；Gas supply part, it is to supply gas in vacuum chamber；Luminous intensity detector, the luminous intensity of the plasma produced when it is to forming film is detected；Multiple light introducing sections, the light of the plasma is imported into the luminous intensity detector by it；With switching switch portion, it is used to optionally be connected the luminous intensity detector with any one in the multiple light introducing section.

Description

The manufacture method of sputter equipment, the manufacture method of film and electronic device
Technical field
The present invention relates to sputter equipment.
Background technology
In recent years, the demand of display and illumination, electric substrate, building materials etc. is improved, particularly in heat labile flexible base High speed film forming under the transition mode of the film forming requirement reactive sputtering on plate etc..
In the film forming under carrying out transition mode, monitored and to reactant gas flow using plasma is luminous Carry out PID (ratio, integration, differential) control with by luminous intensity remain it is fixed, be referred to as PEM (plasma emission monitor：Plasma emission is monitored) control method carry out (with reference to patent document 1).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2006-124811 publications
But, reactive sputtering is carried out large-area substrates are directed to using the PEM control methods described in patent document 1 , it is necessary to configure multiple light introducing sections (such as collimater) along the length direction of negative electrode as illustrated in fig. 1 in the case of the film forming of method, Luminous intensity detector (optical splitter, photoelectron-multiplier-tube, photomultiplier are connected respectively in each light introducing section (Photomultiplier Tube) etc.), and PEM control systems are provided independently to each detector.Here, the PEM controls of Fig. 1 System processed by adjusted according to the luminous intensity for detecting the quantity delivered of reactant gas the next PC (personal computer) and with MFC (the massflow controller of the next PC connections：Mass flow controller) constitute.Additionally, in Fig. 1, being provided with use In the upper PC for being all together the next PC.
Also, due to there is individual difference (poor sensitivity) between each detector, it is therefore desirable between carrying out each detector Individual difference amendment, control system and control software are easily complicated.Therefore, it is possible to cause being drawn by control error, round-off error etc. The deterioration and the rise of installation cost of the film quality and film thickness distribution that rise.
The content of the invention
The present invention exactly in view of problem as described above and complete, there is provided carry out stage die large-area substrates are directed to PEM can be carried out using a luminous intensity detector and a controlling organization for multiple light introducing sections during film forming under formula The sputter equipment of control.
A kind of sputter equipment, it forms film in vacuum chamber on by film-forming component, and the sputter equipment is characterised by, its Possess：Negative electrode, it is provided with target；Gas supply part, it is to supply gas in vacuum chamber；Luminous intensity detector, it is to shape The luminous intensity of the plasma produced during film forming is detected；Multiple light introducing sections, it imports the light of the plasma To the luminous intensity detector；With switching switch portion, it is used for the luminous intensity detector is optionally more with described Any one connection in individual light introducing section.
Invention effect
Because the present invention is constructed as described above, therefore as can when the film forming under transition mode is carried out for large-area substrates The sputter equipment of PEM controls is carried out using a luminous intensity detector and a controlling organization for multiple light introducing sections.
Label declaration
1 vacuum chamber
2 by film-forming component
3 negative electrodes
4 gas supply parts
5 luminous intensity detectors
6 light introducing sections
7 switching switch portions
8 CPU portions
14 calibration light sources
15 purge gas introduction parts
16 controlling organizations
Brief description of the drawings
Fig. 1 is the outline figure of existing example.
Fig. 2 is the outline figure of the device of preferred one embodiment of the invention.
Fig. 3 is the amplification outline figure of light introducing section (collimater).
Fig. 4 is the outline figure of switching control.
Fig. 5 is the outline figure of the device of preferred another example 1 of the invention.
Fig. 6 is the amplification outline figure of the switching switch portion in Fig. 5.
Fig. 7 is the outline figure of the device of preferred another example 2 of the invention.
Fig. 8 is the amplification outline figure of the light introducing section (collimater) of preferred another example 3 of the invention.
Specific embodiment
With reference to the accompanying drawings, effect of the invention is shown preferred embodiment simply to be illustrated to of the invention.
In the device shown in Fig. 2, by sputter at by film-forming component 2 formed reactive membrane when, can according to etc. The luminous intensity of gas ions adjusts the quantity delivered of reactant gas, reliably can in the transition mode form reactive membrane.
Here, for the luminous intensity of plasma, by switching any one that switch portion 7 selects in multiple light introducing sections The luminous intensity imported from a light introducing section is detected in turn to pass through luminous intensity detector 5.For example, by constituting For：Switched multiple light introducing sections every t seconds respectively in turn to detect the luminous strong of the plasma imported from each light introducing section Degree, even if so as to not be respectively provided with detector to each light introducing section, it is also possible to the respective setting position in multiple light introducing sections Luminous intensity is monitored with enough frequencies.
Therefore, compared with structure as Fig. 1, apparatus structure can be simplified, additionally, without the individual difference between detector Amendment, can suppress the complication of control system and control software to control cost.Additionally, the present invention is in reactive sputtering device In it is especially effective.
[embodiment]
Specific embodiment of the invention is illustrated with reference to the accompanying drawings.
The present embodiment is following reactive sputtering device：In vacuum chamber 1 it is opposed arrange glass substrate or film etc. by into Membrane element 2 and the rotating cathode 3 for being provided with target, import O in vacuum chamber 12、N2Isoreactivity gas simultaneously uses PEM controlling parties Method carries out reactive sputtering, forms reactive membrane.
Specifically, in the present embodiment, as shown in Fig. 2 being following structure：It is provided with a pair of rotating cathodes 3 and is used for Three gas supply parts 4 (gas tip) of supply response gas, the pair of rotating cathode 3 is removed along with by transport mechanism The vertical direction of the conveyance direction by film-forming component 2 sent is set, and the gas supply part 4 is between the rotating cathode 3 along rotation Pole 3 of turning out cloudy is provided with multiple gas discharge outlets, also, is correspondingly provided with three works with each gas tip along rotating cathode 3 It is the collimater of light introducing section 6.Each gas supply part 4 being scheduled on without one, light introducing section 6 is set, but due to by each gas Body supply unit sets light introducing section 6 and easily the gas to being supplied by each gas supply part 4 is suitably controlled, therefore is excellent Choosing.
Gas tip is separately positioned on central portion, left part, the right part of rotating cathode 3, and the gas tip of central portion is configured Size than the gas tip in left and right portion is long.Because the end regions of rotating cathode 3 are particularly easy to film out-of-flatness, therefore, The gas flow for being supplied to end is set to optimize to reduce film out-of-flatness using such structure.Though additionally, do not show in fig. 2 Go out, but because the gas tip of the size long from central portion equably discharges gas, it is therefore further preferred to form following structure： Make the stream branch of gas after MFC adjusts flow and be connected with gas tip, gas is flowed into from many places.
The light that plasma is sent leads to the light introducing section 6 that luminous intensity detector 5 is imported via switching switch portion 7 Cross optical fiber and be connected to optical splitter as luminous intensity detector 5.Specifically, control is switched over to switching switch portion 7, So that multiple switched terminals that the light introducing section 6 is connected to input side through optical fiber respectively (are in Fig. 1 1ch~3ch (passage)), the luminous intensity detector 5 is connected to outlet side public terminal through optical fiber, selects the plasma Any one in the light introducing section that the light that sends is imported.
Additionally, position will be set in the state of being reduced for influence (from incident scattering light in other regions etc.) around Luminance guided to luminous intensity detector 5, light introducing section 6 preferably have collimating structure.As shown in figure 3, the present embodiment Light introducing section 6 there is collimating structure, the collimating structure is provided with introduction part and collimation lens, and the introduction part possesses Through hole, the light that the collimation lens sends plasma is imported to the inside of through hole towards optical fiber.Introduction part is set There is purge gas introduction part 15, the purge gas introduction part 15 is used to import purge gas, the purge gas The film for preventing sputtering from being formed is attached to the inner peripheral surface of collimation lens and introduction part.Purge gas introduction part 15 is led by Ar gases Enter pipe and choke valve is constituted, one end of the Ar gas introduction tubes is connected with the opening of the inner peripheral surface for being arranged at introduction part, separately One end is connected with Ar gas tanks, and the choke valve is opened and closed to the Ar gas introduction tubes.Therefore, by adjusting throttling in film forming Valve and by Ar gas injections to introduction part, invaded in light introducing section 6 thus, it is possible to suppress filmogen.
The switching control of switch portion 7 is switched over by controlling organization 16.The controlling organization 16 is by common PC (individual's meters Calculation machine) CPU (central processing unit) portion 8 and control unit 9 constitute.Cutting for above-mentioned switching switch portion 7 is carried out by CPU portions 8 simultaneously Change the control of the rotating speed and direction of rotation of the rotating cathode 3 that control and operation rotating speed/direction controlling portion 12 are carried out.
Additionally, being controlled such that by luminous strong in the quantity delivered to the reactant gas from the gas supply part 4 When the luminous intensity that degree detector 5 is detected turns into luminous intensity set in advance, according to the command operating control from CPU portions 8 Portion processed 9 adjusts MFC11 to control reactant gas (O2And N2) quantity delivered.Further, it is also possible to pass through the operation of control unit 9 DC/ The voltage etc. of AC (AC/DC) power supply 10 to control to apply to rotating cathode 3.
In the present embodiment, it is configured to：According to switching time set in advance automatically by regulation the touring cycle repeatedly Switch over control.Specifically, switching switch portion 7, CPU portions 8 and control unit 9 are constituted as shown in Figure 4, with by the Tsec cycles Carry out the detection by means of each luminous intensity detector 5.
That is, for example, will switching switch portion 7 be switched to 1 passage after, in t1Sec obtains luminous from luminous intensity detector 5 The luminous intensity values are transferred to control unit 9 by intensity, carry out PEM controls, set the stream of the MFC1 passages of next cycle (Tsec) Value.Also in turn equally carried out (in addition, t in the present embodiment on other passages1=t2=t3).Therefore, in the present embodiment In carry out PEM controls by the Tsec cycles, it is thus identified that the film forming under transition mode can continue well.
As described above, by by means of switching switch portion 7 automatically switch successively the light for sending the plasma to The light introducing section 6 that the luminous intensity detector 5 is imported such that it is able to examined by a luminous intensity detector 5 Measure the luminous intensity of the plasma being provided with multiple positions of multiple light introducing sections 6.
Additionally, in the present embodiment, be configured to, calibration light source 14 is connected into the switched terminal of switching switch portion 7, and (4 lead to Road) such that it is able to the calibration light source 14 and the luminous intensity detector 5 are coupled together, is examined by by means of luminous intensity Survey device 5 and detect the light from calibration light source 14 such that it is able to carry out the correction of luminous intensity detector 5.Therefore, by that will switch Terminal is switched to 4 passages such that it is able to detects the aging caused sensitivity error of luminous intensity detector 5 and is repaiied Just.Additionally, the switching switch portion 7 of the present embodiment possesses and setting extent of amendment to measured value and being in outside extent of amendment in measured value When alarm is sent to urge the alarm function of confirmation.
In addition, for example, it is also possible to another example 1 as shown in Figure 5, Figure 6 is configured to like that：Detect including light introducing section 6 go forward side by side line sensitivity amendment in the overall sensitivity error of interior light path.Specifically, it is also possible to be configured to：With opposed side Formula configures light introducing section 6 and light injection part 17, can import light into portion 6 and is connected with luminous intensity detector 5, can project light Portion 17 is connected with calibration light source 14, so that the light for getting self-correcting light source 14 is imported into through light injection part 17, light introducing section 16 To luminous intensity detector 5.In this case, as shown in fig. 6, configuring light injection part 17 and light importing in couples in each passage Portion 6.Additionally, being also as described above following structure in another example 1：Switching switch portion 7 possesses repaiies to measured value setting Positive scope simultaneously sends alarm to urge the alarm function of confirmation when measured value is in outside extent of amendment.Thereby, it is possible to detect The overall sensitivity error of system is carrying out sensitivity amendment.
Additionally, above-mentioned controlling organization 16 can also be following structure：Possesses hysteresis characteristic acquisition unit, the hysteresis characteristic takes Unit automatically on-off reaction gas and obtain the luminous intensity of specified wavelength at that time automatically and by it with pictorialization Form is displayed on the display being connected with CPU portions 8.By using hysteresis characteristic acquisition unit such that it is able to learn in advance Carry out the reacting gas quantity delivered substantially during the film forming under transition mode.
In addition, the present embodiment has used rotating cathode 3, for example, another example 2 as shown in Figure 7 is like that by the present invention Be applied to rotating disk (カ ル ー セ Le) in the case of type sputter equipment similarly.Fig. 7 is following structure：Side face is set to be provided with multiple Rotated by the roller of film-forming component 2, and negative electrode 3 (target) is respectively provided with the three of the inner surface of vacuum chamber 1 to carry out film forming. In the figure 7, it is configured to so：Light introducing section 6 is respectively configured in the neighbouring position of three targets, can be detected respectively in each target The plasma of generation is luminous near material.In the figure 7, label 13 is the power supply of the negative electrode 3 being controlled by control unit 9.Its It is remaining identical with the present embodiment.
In the case where film is formed on by film-forming component using the device described in above-described embodiment, it is preferred that In film forming process, the luminous intensity of plasma is in turn detected in many places by a luminous intensity detector, and adjust Whole gas flow, to cause that testing result turns into the luminous intensity of regulation.Alternatively, it is also possible to be adjusted before the membrane is formed, In this case, can be using such method：Set by film-forming component in device after the adjustment, or, after the adjustment by lock Door is opened to start film forming.In addition it is also possible to formed using device of the invention for electrode etc. film and by evaporation, The methods such as CVD (chemical gaseous phase film forming), coating form other films, so as to manufacture electronic device.
In addition, as another example 3 of light introducing section 6, it is also preferred that with collimating structure as shown in Figure 8, so as to Via light in the state of the luminance at setting position is influence (from incident scattering light in other regions etc.) reduction of surrounding The light that fibre sends plasma is guided to luminous intensity detector 5.As shown in figure 8, the light introducing section 6 of this another example 3 has Have introduction part and a connecting portion 22, the introduction part has a through hole 20, the connecting portion 22 with by the light of plasma to The optical fiber connection of the luminous intensity test section guiding, the diameter by the connecting portion side of through hole 20 is less than the plasma The diameter of the incident side of the light of body.Also, adhesion-preventing member 21 is provided between through hole 20 and connecting portion 22.More specifically For, light introducing section 6 possesses：First taking mouth 18, it is the taking mouth that the light for sending plasma is taken into；It is taken into second Mouthfuls 19, it is smaller than first taking mouth 18 in the inboard of first taking mouth 18, the grade being taken into from the second taking mouth 19 from The light that daughter sends is through through hole 20 and through being guided to optical fiber after adhesion-preventing member 21.The adhesion-preventing member 21 is anti- Only filmogen is attached to the part of optical fiber, and material is the material that the wavelength measured by luminous intensity detector 5 is passed through, Can be glass or resin.
Also, light introducing section 6 is provided with purge gas introduction part 15, the purge gas introduction part 15 is used to lead Enter purge gas, the purge gas prevent filmogen to be attached to adhesion-preventing member 21, through hole 20, the first taking mouth 18 and second taking mouth 19 inner peripheral surface etc..Purge gas introduction part 15 is made up of Ar gas introduction tubes and choke valve, described One end of Ar gas introduction tubes is connected with the opening for being arranged at the inner peripheral surface for importing road, and the other end is connected with Ar gas tanks, the section Stream valve is opened and closed to the Ar gas introduction tubes.Therefore, choke valve is adjusted with by Ar gas injections to light guide by film forming Enter in portion 6 such that it is able to suppress filmogen and invade in light introducing section 6.
In addition, the invention is not restricted to the present embodiment, the concrete structure of each inscape can be suitably designed.

Claims (13)

1. a kind of sputter equipment, it forms film in vacuum chamber on by film-forming component, and the sputter equipment is characterised by, its tool It is standby：
Negative electrode, it is provided with target；
Gas supply part, it is to supply gas in vacuum chamber；
Luminous intensity detector, the luminous intensity of the plasma produced when it is to forming film is detected；
Multiple light introducing sections, the light of the plasma is imported into the luminous intensity detector by them；With
Switching switch portion, its be used for by the luminous intensity detector optionally with the multiple light introducing section in any one Connection.
2. sputter equipment according to claim 1, it is characterised in that
The sputter equipment possesses controlling organization, and the controlling organization is carried out to the quantity delivered of the gas from the gas supply part Control so that the luminous intensity detected by the luminous intensity detector turns into luminous intensity set in advance.
3. sputter equipment according to claim 1, it is characterised in that
The sputter equipment possesses switching control mechanism, and the switching control mechanism is controlled to the switching switch portion, makes Any one in luminous intensity detector period ground and multiple light introducing sections is sequentially connected.
4. sputter equipment according to claim 2, it is characterised in that
The sputter equipment possesses switching control mechanism, and the switching control mechanism is controlled to the switching switch portion, makes Any one in luminous intensity detector period ground and multiple light introducing sections is sequentially connected.
5. according to the sputter equipment that any one of Claims 1 to 4 is described, it is characterised in that
The light introducing section has collimating structure.
6. sputter equipment according to claim 5, it is characterised in that
The light introducing section possesses：Introduction part, it has through hole；And collimation lens, it is arranged at the through hole.
7. sputter equipment according to claim 5, it is characterised in that
The light introducing section possesses：Introduction part, it has through hole；And connecting portion, it is connected with optical fiber, and the optical fiber is by institute The light for stating plasma is guided to the luminous intensity test section,
The diameter of the diameter by the connecting portion side of the through hole side incident less than the light of the plasma.
8. sputter equipment according to claim 7, it is characterised in that
Possesses adhesion-preventing member between the introduction part and the connecting portion.
9. sputter equipment according to claim 5, it is characterised in that
The light introducing section possesses purge gas introduction part, and the purge gas introduction part is used in the introduction part Portion imports purge gas.
10. according to the sputter equipment that any one of Claims 1 to 4 is described, it is characterised in that
The switching switch portion has switched terminal, and the switched terminal is used to for the luminous intensity detector to be connected to correction Light source.
11. according to the described sputter equipment of any one of Claims 1 to 4, it is characterised in that
The controlling organization possesses hysteresis characteristic acquisition unit, and the hysteresis characteristic acquisition unit automatically increases and decreases gas and automatic Obtain the luminous intensity of specified wavelength at that time, and the luminous intensity is included in the way of pictorialization with controlling organization On the display of CPU portions connection.
A kind of 12. manufacture methods of film, form film, the film using sputtering method in the manufacture method of the film on by film-forming component Manufacture method be characterised by, including following operation：
The operation that will be arranged on by film-forming component in vacuum chamber；
The operation being adjusted to the gas flow importeding into the vacuum chamber；With
The operation of plasma is produced to being provided with the negative electrode applied voltage of target,
The luminous intensity of the plasma is detected successively in many places using a luminous intensity detector, and to the gas stream Amount is adjusted so that testing result turns into the luminous intensity of regulation.
A kind of 13. manufacture methods of electronic device, the manufacture method of the electronic device at least has following operation：In vacuum chamber The operation of film is formed using sputtering method；And according at least one method selected from the group being made up of evaporation, CVD, coating The operation of film is formed, the manufacture method of the electronic device is characterised by,
In the operation for forming film using the sputtering method,
The luminous intensity of plasma is detected successively in many places using a luminous intensity detector, and to being led to the vacuum chamber The gas flow for entering is adjusted so that testing result turns into the luminous intensity of regulation.
CN201611095077.7A 2015-12-01 2016-12-01 The manufacture method of sputter equipment, the manufacture method of film and electronic device Pending CN106811727A (en)

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JP2015-234596 2015-12-01
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JP2016-220821 2016-11-11

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