CN106803476A - A kind of laser splash cluster ions source - Google Patents
A kind of laser splash cluster ions source Download PDFInfo
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- CN106803476A CN106803476A CN201710114780.6A CN201710114780A CN106803476A CN 106803476 A CN106803476 A CN 106803476A CN 201710114780 A CN201710114780 A CN 201710114780A CN 106803476 A CN106803476 A CN 106803476A
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- sample target
- cluster ions
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- fix bar
- ion source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
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- Engineering & Computer Science (AREA)
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Abstract
This application discloses a kind of laser splash cluster ions source, including：Ion source main, pulse valve, sample target fix bar, entering light screw, sample target, nozzle, diaphragm seal, also include seal, the seal is located between sample target fix bar and ion source main, for sealing the gap between the sample target fix bar and the sample wad cutter of the ion source main, so that the better tightness in laser splash cluster ions source, so as to the plasma leakage for avoiding laser splash from producing, and plasma is reduced with the effective collision of carrier gas, and then the generation efficiency of raising cluster ions, strengthen ion signal.
Description
Technical field
The present invention relates to mass ion source technical field, more particularly to a kind of laser splash cluster ions source.
Background technology
Cluster includes elementide and molecular cluster, is to pass through physics by several or even thousands of atoms, molecule or ions
Or metastable microcosmic or submicroscopic aggregation of the yardstick of chemical binding force formation between 0.1nm to 100nm.In the chi
Under degree, the physics and chemical property of the cluster significant changes with the change of the factors such as its component, size, electric charge, electronic structure,
A series of special properties are shown, such as quantum size effect, high-specific surface area, substantial amounts of unpaired electron, chemistry high are living
Property and catalysis activity etc..Therefore, cluster is considered as the new level of the structure of matter between atom and molecule and macroscopic solid.
Cluster generation method the most frequently used at present is that the laser splash ultrasonic molecular beam invented by Smalley seminar is cooled down
Method, it can be used to produce various ions, free radical and other reactive intermediates, and its basic process is：In vacuum, a beam pulse swashs
Light directly sputters solid sample surface (sputter area≤1mm2), high-temperature evaporation sample produces plasma, and plasma is by arteries and veins
The carrier gas for rushing valve ejection is taken away, and plasma collides with carrier gas, cools down and assemble to form cluster, in vacuum after nozzle sprays
Middle supersonic expansion is further cooled down.Plasma can also be with such as O of the gas in carrier gas2、H2, the gas reaction such as CO, produce various
Oxide, hydride and carbide.
In view of the extensive utilization of laser splash radiation ionization, in the urgent need to a kind of efficient laser splash cluster ions source.And it is real
The laser splash ion gun tested produces the less efficient of cluster ions, causes ion signal intensity weaker.
The content of the invention
In view of this, the present invention provides a kind of laser splash cluster ions source, to solve swashing for experiment in the prior art
Light sputtering cluster ions source produces less efficient, the problem for causing ion signal intensity weaker of cluster ions.
To achieve the above object, the present invention provides following technical scheme：
A kind of laser splash cluster ions source, including：
Ion source main, pulse valve, sample target fix bar, entering light screw, sample target, nozzle, diaphragm seal and seal；
The ion source main offers sample wad cutter and light well, the ion gun master respectively on two relative surfaces
Vertical with light well cluster ions growth passage is further opened with body and carrier gas enters passage；
Offer the hollow passageway for running through inside the pulse valve, the hollow passageway, the carrier gas enter passage, described
Cluster ions growth passage, the nozzle are sequentially connected to form gas circuit；
The sample target fix bar is located in the sample wad cutter of the ion source main, and the sample target is arranged on the sample
Between product target fix bar and the ion source main；
Be fixed on the diaphragm seal in the light well by the entering light screw, and the diaphragm seal is used to seal the entering light
Hole；
Wherein, the seal is used to seal between the sample target fix bar and the sample wad cutter of the ion source main
Gap.
Preferably, the seal is sealing ring.
Preferably, the sealing ring is RUBBER O circle.
Preferably, the number of the RUBBER O circle is at least 2, and along the sample target fix bar axis direction side by side
Arrangement.
Preferably, RUBBER O ring recess is offered on the outer wall of the sample target fix bar, is used to position the RUBBER O circle.
Preferably, the light well is designed with the sample target using off-axis.
Preferably, also including stepper motor, the stepper motor is with the sample target fix bar away from the sample target
One end connects, and the sample target fix bar drives the sample target in the sample wad cutter in the presence of the stepper motor
Interior rotation.
Preferably, connected with screw thread matching way between the entering light screw and the ion source main.
Preferably, the diaphragm seal is copper sheet.
Understood via above-mentioned technical scheme, the laser splash cluster ions source that the present invention is provided, including ion source main,
Pulse valve, sample target fix bar, entering light screw, sample target, nozzle, diaphragm seal, also including seal, the seal is located at sample
Between product target fix bar and ion source main, the sample wad cutter for sealing the sample target fix bar and the ion source main
Between gap so that the better tightness in laser splash cluster ions source, so as to avoid laser splash produce plasma
Leakage, and plasma is reduced with the effective collision of carrier gas, and then improves the generation efficiency of cluster ions, enhancing ion letter
Number.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation in laser splash cluster ions source provided in an embodiment of the present invention；
Fig. 2 is the structural representation of ion source main provided in an embodiment of the present invention；
Fig. 3 is the structural representation of sample target fix bar provided in an embodiment of the present invention；
Fig. 4 is the structural representation in another laser splash cluster ions source provided in an embodiment of the present invention.
Specific embodiment
For laboratory, due to Cost Problems, subsequent ion detection means precision or amplifying device are less efficient
When, if the cluster ions signal intensity that laser splash ion gun is produced is weaker, the signal intensity for detecting will be caused weaker, or not
It is sufficient for subsequent experimental.Namely just as described in the background section, the laser splash ion gun of experiment in the prior art
Generation cluster ions signal intensity is weaker, and the generation efficiency of cluster ions is relatively low.
Inventor has found that the major reason that the cluster ions signal intensity of generation is inadequate is by practice：Existing skill
Non-integral laser splash cluster ions source allows the surface of sample target fix bar to try one's best and is close to using the means of mechanical matching in art
The side of ion source main.Due to mechanical matching, the precision and the accuracy requirement of installation for being machined are higher, experiment
In be often difficult to reach, therefore, after producing plasma on laser splash to sample target, plasma in sample target fix bar and
There is part and reveal in the mechanical matching part of ion source main, reduce the useful effect between plasma and carrier gas, cause
The generation efficiency of cluster ions is relatively low, so that the ion signal insufficient strength for producing is preferable.
Based on this, the invention provides a kind of laser splash cluster ions source device, including：Ion source main, pulse valve,
Sample target fix bar, entering light screw, sample target, nozzle, diaphragm seal and seal；
The ion source main offers sample wad cutter and light well, the ion gun master respectively on two relative surfaces
Vertical with light well cluster ions growth passage is further opened with body and carrier gas enters passage；
Offer the hollow passageway for running through inside the pulse valve, the hollow passageway, the carrier gas enter passage, described
Cluster ions growth passage, the nozzle are sequentially connected to form gas circuit；
The sample target fix bar is located in the sample wad cutter of the ion source main, and the sample target is arranged on the sample
Between product target fix bar and the ion source main；
Be fixed on the diaphragm seal in the light well by the entering light screw, and the diaphragm seal is used to seal the entering light
Hole；
Wherein, the seal is used to seal between the sample target fix bar and the sample wad cutter of the ion source main
Gap.
The invention provides a kind of laser splash cluster ions source, it is optimized to structure, sets close by increasing
Sealing, improves the sealing situation between sample target fix bar and ion source main, significantly improves laser splash cluster ions
The operating efficiency in source.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is referred to, Fig. 1 illustrates for a kind of laser splash cluster ions source device structure provided in an embodiment of the present invention
Figure；The laser splash cluster ions source device includes：Ion source main 1, pulse valve 2, sample target fix bar 3, entering light screw
4th, sample target 5, nozzle 7, diaphragm seal 8 and seal 9；Wherein, as shown in Fig. 2 being ion gun master provided in an embodiment of the present invention
The structural representation of body, ion source main 1 offers sample wad cutter 11 and light well 12, ion respectively on two relative surfaces
Vertical with light well 12 cluster ions growth passage 13 is further opened with source main body 1 and carrier gas enters passage；Inside pulse valve 2
The hollow passageway for running through is offered, hollow passageway, carrier gas are sequentially connected shape into passage, cluster ions growth passage 13, nozzle 7
Into path；Sample target fix bar 3 is located in the sample wad cutter 11 of ion source main 1, and sample target 5 is arranged on sample target fix bar 3
And ion source main 1 between；Be fixed on diaphragm seal 8 in light well 12 by entering light screw 4, and diaphragm seal 8 is used to seal light well 12；
Wherein, seal 9 is used for the gap between sealed sample target fix bar 3 and the sample wad cutter 11 of ion source main 1.
It should be noted that as shown in figure 3, be the structural representation of sample target fix bar provided in an embodiment of the present invention,
One end of sample target fix bar 3 offers sample target fixing hole 14, for placing sample target 5, and sample target 5 is fixed on into ion
In the sample wad cutter 11 of source main body 1.
Increase seal by between sample target fix bar and ion source main in the embodiment of the present invention, improve sample
Sealing situation between target fix bar and ion source main, it is necessary to explanation, in the embodiment of the present invention to the seal not
Limit, as long as tool is resilient, the seal for playing sealing function goes for the embodiment of the present invention.For convenience of close
The installation and customization of sealing, optionally, seal is sealing ring in the embodiment of the present invention, because quality of rubber materials is relative to other
Sealed material is both economical, and used as sealing ring, the formulated change degree of RUBBER O circle is high, with preferable wearability, therefore more
Plus it is preferred, the sealing ring is RUBBER O circle.
In the installation process in laser splash cluster ions source, RUBBER O snare is first located at the outer wall of sample target fix bar
On, then sample target fix bar is filled in the sample wad cutter of ion source main, it is necessary to explanation, in order to sealing effectiveness compared with
Good, the diameter that increased the sample target fix bar of RUBBER O circle will be slightly larger than the internal diameter of sample wad cutter, during plug, sometimes
Time can occur RUBBER O circle and skid off the phenomenon come.To solve this problem, as shown in figure 3, in sample target fix bar in the present embodiment
Outer wall on offer RUBBER O ring recess 15, be used to position the RUBBER O circle, prevent RUBBER O circle slide.Inventor is by practice
It was found that, even if increasing RUBBER O ring recess, it is also possible to the landing of RUBBER O circle, the phenomenon of sealing effectiveness difference, to ensure sealing effect occur
Really, optional in the embodiment of the present invention, the number of the RUBBER O circle is at least 2, and along the axle of the sample target fix bar 3
Line direction is arranged side by side.Multiple RUBBER O circles are set, and by multiple RUBBER O circles along the sample target fix bar 3 axis direction
Stacked arrangement product target fix bar 3 outer wall, in installation process, even if there is partial rubber O to enclose sliding, also some rubber
JiaoOQuan ensure that sealing effectiveness.
In the present embodiment, ion source main for whole device central module, other assemblies all directly or indirectly with its
Cooperating.As entering light screw 4 is connected to fixing seal piece by screw thread with ion source main, used in sample wad cutter 11
It is tightly connected by RUBBER O circle with ion source main 1 in the sample target fix bar 3 of fixed sample target 5.
The center section of ion source main 1 is the hollow passageway through ion source main 1, as shown in Fig. 2 hollow passageway with
Light well 12 is boundary, left narrow right width, and narrow for carrier gas enters passage, the gas outlet with pulse valve 2 is connected；Wide is cluster
Ion grows passage 13, is connected with nozzle 7.The hollow passageway of pulse valve 2 in the present embodiment, carrier gas enter passage, cluster from
Son growth passage 13 and the mesopore of nozzle 7 are sequentially connected, and above-mentioned passage uses coaxial design in forming gas circuit, and the present embodiment, with
Ensure the collimation of gas circuit and unobstructed.The plug of spring drive, normal conditions are provided with the gas outlet of the hollow passageway of pulse valve
Under, the hollow passageway of pulse valve 2 and carrier gas are completely cut off between passage by plug, and gas Shu Wufa passes through, when pulse valve is received
During to pulse signal, spring pulls the passage that plug enters between passage the hollow passageway of pulse valve 2 and carrier gas to open, and allows load
Gas passes through so that the hollow passageway of pulse valve 2, carrier gas enter passage, cluster ions growth passage 13 and nozzle 7 and form gas circuit.
It should be noted that as shown in figure 1, laser 10 is entered into inside ion source main by light well 12, with sample
The process that target 5 is sputtered occurs in a vacuum, and pulse laser directly sputters solid sample target surface, high-temperature evaporation sample
Plasma is produced, plasma is taken away into cluster ions growth passage 13 by the carrier gas that pulse valve 2 sprays, herein with load
Gas collides, cools down and assemble to form cluster.Therefore the abundant collision of plasma and carrier gas is the key that cluster is formed.
In the present embodiment, to ensure the vacuum state inside ion source main, and sealing effectiveness.By entering light screw 4
It is connected with ion source main 1 to fixing seal piece 8 by screw thread, in the present embodiment, diaphragm seal 8 serves the work of similar sealing
With sputtering laser 10 only passes through from the aperture of the formation of diaphragm seal 8 is punctured, and significantly limit plasma from ion source main
Leakage at 1 light well 12.In addition, the cluster ions growth internal diameter of passage 13 is larger, and two ends inlet and outlet diameter is smaller.
Small at both ends and big in the middle structure can allow carrier gas fully to be collided with plasma, and the enhancing for cluster ions signal is also functioned to
Certain effect.
Material in the present embodiment to the diaphragm seal 8 is not limited, if sealing function can be played, and in laser
Under effect, can be by laser penetration, optionally, the material of diaphragm seal is that copper, i.e. diaphragm seal 8 are copper sheet in the present embodiment,
In order to easily obtain in the lab.
It should be noted that not limited pulse valve in the embodiment of the present invention, optionally, pulse valve 2 is held using pulse
The continuous time is more long, the more pulse valve of the gas flow sprayed in a pulse.
Laser used is not also limited in the present embodiment.The selection of laser be depend primarily on pulsed laser energy,
For reflectivity, laser pulse width, the thermal conduction rate of sample etc. of specific wavelength laser, factors above determines sharp sample
Light passes to the energy of sample and the generation species of plasma.Because the laser that the excimer laser commonly used is produced is not allowed
Easily focus on, optional in the present embodiment, sputtering laser 10 used is that wavelength is the infrared light of 1064nm.The laser of wavelength 1064nm
It is by Nd:What YAG laser was produced, Nd:The laser that YAG laser is produced is nearly Gaussian, is easily focused, so that more
It is easy to sputter plasma on sample target surface.
In the embodiment of the present invention, carried out by the setting seal between sample target fix bar 3 and ion source main 1 close
Envelope, the plasma that the surface of 10 sputtered samples target of sputtering laser 5 produces will not connect from sample target fix bar 3 and ion source main 1
Reveal at the place of connecing such that it is able to the generation of cluster ions is participated in well into cluster ions growth passage 13, and then significantly
The generation efficiency of cluster ions in laser splash cluster ions source is improve, ion signal is enhanced.
Fig. 4 is referred to, Fig. 4 is the structural representation in another laser splash cluster ions source provided in an embodiment of the present invention
Figure；The laser splash cluster ions source includes ion source main 1, pulse valve 2, sample target fix bar 3, entering light screw 4, sample
Target 5, nozzle 7, diaphragm seal 8 and seal 9, wherein, the annexation of said structure and effect with above example in
Annexation and effect are identical, and this is not described in detail in the present embodiment.
From unlike a upper embodiment, laser splash cluster ions source also includes stepper motor 6, stepping in the present embodiment
Motor 6 and sample target fix bar 3 are connected away from one end of sample target 5, sample target fix bar 3 in the presence of stepper motor 6, band
The dynamic rotation in sample wad cutter 11 of sample target 5.Set using off-axis with the sample target 5 by by light well 12 in the present embodiment
Meter, i.e., light well 12 is not located along the same line with the axis of sample target 5 so that when laser splash cluster ions source works, and gathers
Defocused sputtering laser 10 will be sealed after copper sheet 8 punches, and beat the surface of sample target 5 of the uniform rotation in the case where being driven in stepper motor 6,
Sputtering laser 10 forms a circle with the zone of action of sample target 5, rather than beats in one, 5 surface of sample target point, so as to carry significantly
The utilization rate of sample target high.More optional, light well 12 is bigger with the distance between the rotary shaft of sample target 5, composition
Circle is bigger, so that the utilization rate of sample target is more preferably, therefore, the distance between rotary shaft of light well 12 and sample target 5 is more
It is big better.
In view of the RUBBER O circle Seal Design between sample target fix bar and ion source main, sputters laser and sample target phase
Acting on the plasma for being formed can be efficiently entering cluster ions growth passage, and the carrier gas spurted into pulse valve 2 is fully collided
Cooling, substantially increases the generation probability of cluster ions.The perforate of the other bottom of nozzle 7 is slightly less than cluster ions growth passage
Diameter, also collision probability and cluster ions formation efficiency of the plasma with carrier gas in passage is grown have necessarily for this design
Raising.
In the present embodiment, as the ion source main 1 of whole device central module, in the work of laser splash ion source device
When, in the sample wad cutter 11 of the side of ion source main 1, the sample target fix bar 3 of sample target 5 is fixed with front end sample target groove 14
It is placed therein.The afterbody of sample target fix bar 3 is connected with a stepper motor for rotating shaft uniform rotation 6.Ion source main 1 is another
In the light well 12 of side, the entering light screw 4 that there is entering light through hole centre is fixed on the bottom of light well 12, fixation side by copper sheet 8 is sealed
Formula is that screw thread coordinates.Sputtering laser 10 after focusing is passed through from the center of entering light screw 4 punches in the band of stepper motor 6 copper sheet 8
The surface of sample target 5 of dynamic lower uniform rotation.Sputtering laser 10 makes with the rotation of the off-axis design cooperation stepper motor 6 of sample target 5
Sputtering laser 10 forms a circle in the zone of action on the surface of sample target 5, rather than a point, so as to substantially increase sample target
5 utilization rate, it is to avoid the frequent replacing of sample target 5.Additionally need it is emphasised that sputtering the focused spot of laser 10 in sample
The surface of target 5.
To sum up, the laser splash cluster ions source that the present embodiment is provided, employs relatively simple device, and significantly excellent
The sealing situation between sample target fix bar and ion source main is changed, so as to significantly improve the formation efficiency of cluster ions, has increased
Strong ion signal.Also employ off-axis sputtering laser simultaneously in addition drives sample target to rotate the side being combined with stepper motor
Formula, hence it is evident that increased the utilization rate of sample target.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference with other embodiment, between each embodiment identical similar part mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (9)
1. a kind of laser splash cluster ions source, it is characterised in that including：
It is ion source main (1), pulse valve (2), sample target fix bar (3), entering light screw (4), sample target (5), nozzle (7), close
Mounting (8) and seal (9)；
Sample wad cutter (11) and light well (12) are offered on two relative surfaces of the ion source main (1) respectively, it is described
It is further opened with that cluster ions vertical with the light well (12) grow passage (13) and carrier gas enters and leads on ion source main (1)
Road；
Offer the hollow passageway for running through inside the pulse valve (2), the hollow passageway, the carrier gas enter passage, described
Cluster ions grow passage (13), the nozzle (7) and are sequentially connected to form gas circuit；
In the sample wad cutter (11) of the ion source main (1), the sample target (5) sets the sample target fix bar (3)
Put between the sample target fix bar (3) and the ion source main (1)；
Be fixed on the diaphragm seal (8) in the light well (12) by the entering light screw (4), and the diaphragm seal (8) is for close
Seal the light well (12)；
Wherein, the seal (9) is for sealing the sample target of the sample target fix bar (3) and the ion source main (1)
Gap between hole (11).
2. laser splash cluster ions source according to claim 1, it is characterised in that the seal (9) is sealing ring.
3. laser splash cluster ions source according to claim 2, it is characterised in that the sealing ring is RUBBER O circle.
4. laser splash cluster ions source according to claim 3, it is characterised in that the number of the RUBBER O circle be to
Few 2, and axis direction along the sample target fix bar (3) is arranged side by side.
5. laser splash cluster ions source according to claim 4, it is characterised in that the sample target fix bar (3)
RUBBER O ring recess (15) is offered on outer wall, is used to position the RUBBER O circle.
6. laser splash cluster ions source according to claim 1, it is characterised in that the light well (12) and the sample
Product target (5) is designed using off-axis.
7. laser splash cluster ions source according to claim 6, it is characterised in that described also including stepper motor (6)
Stepper motor (6) is connected with the sample target fix bar (3) away from one end of the sample target (5), the sample target fix bar
(3) in the presence of the stepper motor (6), the sample target (5) rotation in the sample wad cutter (11) is driven.
8. laser splash cluster ions source according to claim 1, it is characterised in that the entering light screw (4) with it is described
Connected with screw thread matching way between ion source main (1).
9. laser splash cluster ions source according to claim 1, it is characterised in that the diaphragm seal (8) is copper sheet.
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| CN201710114780.6A CN106803476B (en) | 2017-02-28 | 2017-02-28 | A kind of laser splash cluster ions source |
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| CN201710114780.6A CN106803476B (en) | 2017-02-28 | 2017-02-28 | A kind of laser splash cluster ions source |
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| CN110018221A (en) * | 2019-03-02 | 2019-07-16 | 金华职业技术学院 | A kind of test device of the metal cluster of chemical modification |
| RU2716825C1 (en) * | 2019-05-07 | 2020-03-17 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" | Device and method for formation of multicharged ion beams |
| CN111312411A (en) * | 2018-12-11 | 2020-06-19 | 核工业西南物理研究院 | Method for preventing plasma from cracking by injecting liquefied inert gas jet |
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| Publication number | Publication date |
|---|---|
| CN106803476B (en) | 2018-04-10 |
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