CN106801158B - A kind of high power density substrate of mosaic diamond copper and preparation method thereof - Google Patents

A kind of high power density substrate of mosaic diamond copper and preparation method thereof Download PDF

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Publication number
CN106801158B
CN106801158B CN201611253826.4A CN201611253826A CN106801158B CN 106801158 B CN106801158 B CN 106801158B CN 201611253826 A CN201611253826 A CN 201611253826A CN 106801158 B CN106801158 B CN 106801158B
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China
Prior art keywords
copper
diamond
high power
power density
tungsten
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CN106801158A (en
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郭宏
张习敏
王亚宝
刘铭坤
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GRIMN Engineering Technology Research Institute Co Ltd
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Beijing General Research Institute for Non Ferrous Metals
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1005—Pretreatment of the non-metallic additives
    • C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
    • C22C1/1073—Infiltration or casting under mechanical pressure, e.g. squeeze casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention provides a kind of high power density substrate of mosaic diamond copper and preparation method thereof.The base main body includes diamond carbon/carbon-copper composite material part and tungsten copper, molybdenum-copper or oxygen-free copper part.The alloy component is inlayed on the composite or the composite material is embedded on alloy, and two parts are that metallurgical binding or solder bond can direct newly net formings using vacuum pressure infiltration technique.The substrate has the thermal conductivity higher than alloy materials such as tungsten coppers；Coefficient of thermal expansion matches with semi-conducting material；It is easy to be machined, there is better machinability than pure diamond copper product；Relative mass is small and moderate, convenient for promoting the use of, can meet the radiating requirements of high power electronic device, solves and restricts heat dissipation problem of the electronic device to high power and miniaturization.

Description

A kind of high power density substrate of mosaic diamond copper and preparation method thereof
Technical field
The invention belongs to technical field of electronic encapsulation, more particularly to the high power density substrate of a kind of mosaic diamond copper and Preparation method.
Background technology
With the high speed development of microelectric technique, start by the third generation wide bandgap semiconductor chip of representative of GaN chips It widely applies, the control of electronic device heat becomes the key of its normal work, this proposes electronic package material higher It is required that.Ideal electronic package material should have high thermal conductivity, the coefficient of thermal expansion to match with chips such as GaN, Yi Jiyi Fixed strength and stiffness.
The use of more electronic package material is currently on the market tungsten copper, molybdenum-copper, thermal conductivity is up to 280W/ MK has been unable to meet the radiating requirements of high-power die, and in addition the density of tungsten-copper alloy is big, is not suitable for the device to mass-sensitive Part.Start the diamond carbon/carbon-copper composite material thermal conductivity of application in recent years>600W/mK, density is small, but expensive, limits it Large-scale application.The present invention fully considers the advantage and disadvantage of above two material, it is proposed that a kind of mosaic diamond carbon/carbon-copper composite material Structure and preparation method thereof.
Existing tungsten copper, molybdenum-copper and the more ripe technique of diamond carbon/carbon-copper composite material of preparing is vacuum pressure infiltration, Infiltration method is also easy to produce the defects of micropore, influences the stability and thermal conductivity of material, therefore the control of technical process is even more important.Gold Hard rock carbon/carbon-copper composite material is difficult to machine, using vacuum pressure infiltration technique, can direct newly net forming, substantially reduce machining Amount improves overall efficiency.
It is heat sink that patent CN205303452U discloses a kind of diamond copper of the two-sided plating oxygen-free copper with sandwich structure Material can realize excellent heat dissipation and high reliability for solid state microwave high power device, but due to diamond carbon/carbon-copper composite material Unworkability, be not easy to the device of molding structure complexity, and be solder bond, binding performance between diamond copper and oxygen-free copper Be not as good as metallurgical binding effect.Patent CN101935837A discloses a kind of copper-based mosaic structure interface diamond coatings and its system Preparation Method.The heat sink material then has copper-diamond plating by depositing brait layer and fine diamond layer on Copper substrate in deposition Isoepitaxial growth goes out continuous diamond coatings on the diamond that the workpiece surface of layer is appeared.It is prepared by this method complex process It is heat sink expensive, be not easy to promote the use of.Patent CN101450381A, which is disclosed, a kind of preparing tungsten copper heat-sink and electronic seal The technique of package material.The procedure of processing of the technique includes：Powder prepares, adds derivant and batch mixing, molding automatic moulding, pre-burning Knot, copper liquid infiltration etc., have the characteristics that at low cost, production efficiency is high.The high power of apllied a kind of mosaic diamond herein Density substrate and preparation method thereof has certain similitude on processing step with it, but has very in the process of technique specific implementation Big difference, and prepared heat sink substrate has larger advantage than tungsten-copper alloy in thermal conductivity.Exist to solve foregoing invention The problem of, the present invention has following advantage and innovative point：Diamond copper have high thermal conductivity (>600W/mK), it is far above tungsten copper to close The 280W/mK of gold.With good machinability, required machined portions are tungsten copper, molybdenum copper or oxygenless copper material, are avoided pair The direct machining of diamond copper product.Moderate cost, convenient for promoting the use of.
Invention content
The present invention is relatively low, relatively denser and expensive etc. for thermal conductivity existing for current electronic package material to be asked A kind of topic, it is proposed that high power density substrate of mosaic diamond copper and preparation method thereof.
A kind of high power density substrate of mosaic diamond copper, the substrate include diamond carbon/carbon-copper composite material part and tungsten Copper, molybdenum-copper or oxygen-free copper part are metallurgical binding or solder bond between two parts.
Further, the substrate middle section is diamond carbon/carbon-copper composite material, is around tungsten copper, molybdenum-copper or anaerobic Copper；Or middle section is tungsten copper, molybdenum-copper or oxygen-free copper, is around diamond carbon/carbon-copper composite material, between different materials Combination is metallurgical binding.
A kind of high power density substrate of mosaic diamond copper, it is characterised in that:The substrate includes that tungsten, molybdenum or oxygen-free copper are pre- Embedded diamond obtains composite preform in body processed, and tungsten copper, molybdenum copper or oxygen-free copper and Buddha's warrior attendant are prepared by vacuum pressure infiltration method The high power density substrate of embedded diamond copper in stone composite preform is not metallurgical binding between same material.
Further, the composite preform is that pre-buried diamond is sintered gained again in tungsten, molybdenum sintered body or oxygen-free copper.
A kind of preparation method of the high power density substrate of mosaic diamond copper, which is characterized in that include the following steps:
Step 1：Tungsten powder or molybdenum powder and bortz powder are filled in the mold of design and sinter the porous of mosaic diamond into Composite preform；
Step 2：Cathode copper or oxygen-free copper matrix；
Step 3：In vacuum pressure infiltration stove by cathode copper or oxygen-free copper be impregnated into mosaic diamond tungsten or molybdenum it is prefabricated In body, a kind of high power density substrate of mosaic diamond copper is obtained.
A kind of preparation method of the high power density substrate of mosaic diamond copper, which is characterized in that by tungsten copper, molybdenum copper, nothing Diamond/copper material is processed into pair by oxygen copper or silico-aluminum plate in the position processing blind hole or stepped hole of mosaic diamond/copper Shape is answered, a kind of high power density substrate of mosaic diamond copper is prepared by gold germanium, golden tin solder soldering.
Further, the tungsten copper, molybdenum copper, oxygen-free copper, silico-aluminum, diamond/copper be by metallization, it is described Metallization is electronickelling gold.
The present invention has the following advantages：For tungsten copper, molybdenum-copper, the substrate density of mosaic diamond copper is small, Thermal conductivity doubles above；For diamond copper product, it is tungsten copper, molybdenum-copper or nothing to need fine machined parts Oxygen copper part, it is easy to process, while price is relatively low convenient for being widely used；Using Pressure Infiltration technique, can direct newly net forming, Following process amount is reduced, raw material is saved.
Description of the drawings
Fig. 1 is the schematic diagram of nearly end form mold used in the method for the present invention infiltration.
Fig. 2 is the structural schematic diagram of the high power density substrate of mosaic diamond copper of the present invention.
Fig. 3 is the schematic diagram of another structure of high power density substrate of mosaic diamond copper of the present invention.
It is as shown in the figure：1- alloy materials or oxygen-free copper placing groove；2- diamond precast body placing grooves；3- gas vents；4- Alloy material or oxygen-free copper；5- diamond carbon/carbon-copper composite materials；6- fairleads；7- welding layers；8- mounting holes.
Specific implementation mode
The present invention is described in detail with reference to the accompanying drawings and examples, it is pointed out that following embodiment is not constituted pair The restriction of the scope of the present invention.
Embodiment 1
Illustrate the present embodiment in conjunction with Fig. 1 and Fig. 2, places diamond porous preform in the die location 2 of near-net forming, adopt The high power density substrate for the rectangle diamond/copper for inlaying 5 × 20mm in oxygen-free copper is prepared with vacuum pressure infiltration technology, is applied Thermal force power is 400W/cm2, by 56 DEG C of thermal imaging system test chip junction temperature, the junction temperature compared to oxygen-free copper substrate reduces 8- 10℃。
Embodiment 2
Illustrate the present embodiment in conjunction with Fig. 1 and Fig. 2, places diamond porous preform in the die location 2 of near-net forming, adopt The high power density substrate for the rectangle diamond/copper for inlaying 8 × 30mm in oxygen-free copper is prepared with vacuum pressure infiltration technology, is applied Thermal force power is 600W/cm2, by 63 DEG C of thermal imaging system test chip junction temperature, the junction temperature compared to oxygen-free copper metal substrate drops Low 20-25 DEG C.
Embodiment 3
Illustrate the present embodiment in conjunction with Fig. 1 and Fig. 2, adds molybdenum powder in the die location of near-net forming 1 first and then sinter into Porous molybdenum fills diamond dust in the position 2 of nearly end form mold, and sintering again obtains the compound porous prefabricated of mosaic diamond Body prepares the high power density substrate for the rectangle diamond/copper that 8 × 30mm is inlayed in molybdenum copper using vacuum pressure infiltration technology, Application thermal force power is 400W/cm2, by 64 DEG C of thermal imaging system test chip junction temperature, compare the junction temperature of molybdenum copper metal substrate Reduce 18-20 DEG C.
Embodiment 4
Illustrate the present embodiment in conjunction with Fig. 1 and Fig. 2, adds tungsten powder in the die location of near-net forming 1 first and then sinter into Porous molybdenum fills diamond dust in the position 2 of nearly end form mold, and sintering again obtains the compound porous prefabricated of mosaic diamond Body prepares the high power density technology base for the rectangle diamond/copper that 8 × 30mm is inlayed in tungsten copper using vacuum pressure infiltration technology Plate, application thermal force power are 400W/cm2, by 61 DEG C of thermal imaging system test chip junction temperature, compare the knot of tungsten copper metal substrate Temperature drop is 15-18 DEG C low.
Embodiment 5
Illustrate the present embodiment in conjunction with Fig. 3, passes through machine-tooled method processing diameter 16mm base thicknesses 0.2- in oxygen-free copper metallic plate The blind hole of 2mm cuts the diamond/copper disk of 15.8mm, using gold germanium solder by diamond/copper disk and oxygen-free copper metallic plate Soldering gets up to obtain the high power density substrate of mosaic diamond/copper, and application thermal force power is 400W/cm2, pass through thermal imaging 56 DEG C of instrument test chip junction temperature, the junction temperature compared to oxygen-free copper metal substrate reduce 6-8 DEG C.
Embodiment 6
Illustrate the present embodiment in conjunction with Fig. 3, processes the through-hole of diameter 16mm, cutting in molybdenum copper metal plate by machine-tooled method Diamond/copper disk and the soldering of molybdenum copper metal plate are got up to be inlayed by the diamond/copper disk of 15.8mm using gold germanium solder The high power density substrate of diamond/copper, application thermal force power are 400W/cm2, pass through thermal imaging system test chip junction temperature 58 DEG C, the junction temperature compared to molybdenum copper metal substrate reduces 6-8 DEG C.
Embodiment 7
Illustrate the present embodiment in conjunction with Fig. 3, process the through-hole of diameter 16mm in silicon carbide aluminium metal sheet by machine-tooled method, The diamond/copper disk for cutting 15.8mm is got up diamond/copper disk and the soldering of silicon carbide aluminium metal sheet using gold germanium solder The high power density substrate of mosaic diamond/copper is obtained, application thermal force power is 100W/cm2, core is tested by thermal imaging system 65 DEG C of piece junction temperature, the junction temperature compared to silicon carbide aluminum substrate reduce 12-16 DEG C.
Embodiment 8
Illustrate the present embodiment in conjunction with Fig. 3, processes the through-hole of diameter 16mm, cutting in sial metallic plate by machine-tooled method Diamond/copper disk and the soldering of silicon carbide aluminium metal sheet are got up to obtain by the diamond/copper disk of 15.8mm using gold germanium solder The high power density substrate of mosaic diamond/copper, application thermal force power are 100W/cm2, pass through thermal imaging system test chip knot 68 DEG C of temperature, the junction temperature compared to sial substrate reduce 15-18 DEG C.
As described above, describing the invention in detail.Obviously, as long as essentially without the inventive point for being detached from the present invention And effect, will be readily apparent to persons skilled in the art deformation, also be all included in the scope of protection of the present invention.

Claims (1)

1. a kind of preparation method of the high power density substrate of mosaic diamond copper, it is characterised in that：By tungsten copper, molybdenum copper, anaerobic Diamond/copper material is processed into correspondence by copper or silico-aluminum plate in the position processing blind hole or stepped hole of mosaic diamond/copper Shape prepares a kind of high power density substrate of mosaic diamond copper by gold germanium, golden tin solder soldering.
CN201611253826.4A 2016-12-29 2016-12-29 A kind of high power density substrate of mosaic diamond copper and preparation method thereof Active CN106801158B (en)

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CN113210611B (en) * 2021-04-20 2023-05-16 湖南浩威特科技发展有限公司 Copper diamond composite material with metal layer coated on surface and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101168807A (en) * 2007-12-06 2008-04-30 北京有色金属研究总院 High heat conductivity copper-base composite material and preparation method thereof
CN101831584A (en) * 2009-03-10 2010-09-15 北京有色金属研究总院 High heat-conducting copper-based composite material and preparation method thereof
CN104726735A (en) * 2013-12-23 2015-06-24 北京有色金属研究总院 Composite-structure highly-oriented heat conducting material and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101168807A (en) * 2007-12-06 2008-04-30 北京有色金属研究总院 High heat conductivity copper-base composite material and preparation method thereof
CN101831584A (en) * 2009-03-10 2010-09-15 北京有色金属研究总院 High heat-conducting copper-based composite material and preparation method thereof
CN104726735A (en) * 2013-12-23 2015-06-24 北京有色金属研究总院 Composite-structure highly-oriented heat conducting material and preparation method thereof

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Effective date of registration: 20190610

Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing

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Patentee before: General Research Institute for Nonferrous Metals

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