CN106796099B - 用于加工期间的晶片控制的表面轮廓测定的设备和方法 - Google Patents

用于加工期间的晶片控制的表面轮廓测定的设备和方法 Download PDF

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Publication number
CN106796099B
CN106796099B CN201580052115.8A CN201580052115A CN106796099B CN 106796099 B CN106796099 B CN 106796099B CN 201580052115 A CN201580052115 A CN 201580052115A CN 106796099 B CN106796099 B CN 106796099B
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wafer
imaging
profilometry
measurement
shape
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Chinese (zh)
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CN106796099A (zh
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吉莱斯·弗莱斯阔特
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Unity Semiconductor Corp
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Fogale Nanotech SAS
Unity Semiconductor SAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02029—Combination with non-interferometric systems, i.e. for measuring the object
    • G01B9/0203—With imaging systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8841—Illumination and detection on two sides of object

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
CN201580052115.8A 2014-09-25 2015-09-18 用于加工期间的晶片控制的表面轮廓测定的设备和方法 Active CN106796099B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1459086A FR3026481B1 (fr) 2014-09-25 2014-09-25 Dispositif et procede de profilometrie de surface pour le controle de wafers en cours de process
FR1459086 2014-09-25
PCT/EP2015/071407 WO2016046072A1 (fr) 2014-09-25 2015-09-18 Dispositif et procede de profilometrie de surface pour le controle de wafers en cours de process

Publications (2)

Publication Number Publication Date
CN106796099A CN106796099A (zh) 2017-05-31
CN106796099B true CN106796099B (zh) 2020-11-03

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CN201580052115.8A Active CN106796099B (zh) 2014-09-25 2015-09-18 用于加工期间的晶片控制的表面轮廓测定的设备和方法

Country Status (9)

Country Link
US (1) US9958261B2 (cg-RX-API-DMAC10.html)
EP (1) EP3198220B1 (cg-RX-API-DMAC10.html)
JP (1) JP2017530358A (cg-RX-API-DMAC10.html)
KR (1) KR20170059450A (cg-RX-API-DMAC10.html)
CN (1) CN106796099B (cg-RX-API-DMAC10.html)
FR (1) FR3026481B1 (cg-RX-API-DMAC10.html)
SG (1) SG11201702440VA (cg-RX-API-DMAC10.html)
TW (1) TW201614191A (cg-RX-API-DMAC10.html)
WO (1) WO2016046072A1 (cg-RX-API-DMAC10.html)

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US10757394B1 (en) 2015-11-09 2020-08-25 Cognex Corporation System and method for calibrating a plurality of 3D sensors with respect to a motion conveyance
US11562502B2 (en) 2015-11-09 2023-01-24 Cognex Corporation System and method for calibrating a plurality of 3D sensors with respect to a motion conveyance
US10812778B1 (en) 2015-11-09 2020-10-20 Cognex Corporation System and method for calibrating one or more 3D sensors mounted on a moving manipulator
FR3045813B1 (fr) * 2015-12-22 2020-05-01 Unity Semiconductor Dispositif et procede de mesure de hauteur en presence de couches minces
FR3052869B1 (fr) * 2016-06-17 2018-06-22 Unity Semiconductor Dispositif de positionnement d'une plaquette de circuit integre, et appareil d'inspection d'une plaquette de circuit integre comprenant un tel dispositif de positionnement
JP6704831B2 (ja) * 2016-10-20 2020-06-03 株式会社ミツトヨ クロマティック共焦点センサ
CN109672878A (zh) * 2017-10-13 2019-04-23 康耐视公司 对校准物体两相对侧成像的视觉系统的场校准系统和方法
FR3077631B1 (fr) * 2018-02-05 2021-01-01 Unity Semiconductor Procede et dispositif d'inspection d'une surface d'un objet comportant des materiaux dissimilaires
US10782120B2 (en) * 2018-07-03 2020-09-22 Kla Corporation Dual-interferometry wafer thickness gauge
KR102256790B1 (ko) * 2018-07-10 2021-05-28 울산과학기술원 라만-원자간력 현미경의 광축 얼라이너
KR102280558B1 (ko) * 2018-07-10 2021-07-23 울산과학기술원 라만-원자간력 현미경
CN109916347A (zh) * 2019-04-16 2019-06-21 合肥工业大学 一种基于近红外低相干光掺杂硅晶片表面形貌测量方法
DE102019114167A1 (de) * 2019-05-27 2020-12-03 Precitec Optronik Gmbh Optische Messvorrichtung und Verfahren
FR3101702B1 (fr) * 2019-10-07 2021-11-19 Fogale Nanotech Dispositif et procédé de mesures d’imagerie et d’interférométrie
US12215966B2 (en) * 2019-12-06 2025-02-04 Applied Materials, Inc. Methods and systems of optical inspection of electronic device manufacturing machines
CN111664802A (zh) * 2020-06-03 2020-09-15 中国科学院西安光学精密机械研究所 基于动态定量相位成像的半导体晶圆表面形貌测量装置
US11519935B2 (en) * 2020-08-18 2022-12-06 Oxford Instruments Asylum Research, Inc. Atomic force microscope
US11521874B2 (en) * 2020-09-30 2022-12-06 Kla Corporation Systems and methods for determining measurement location in semiconductor wafer metrology
WO2022169442A1 (en) * 2021-02-02 2022-08-11 Kla Corporation Three-motors configuration for adjusting wafer tilt and focus
CN112857238B (zh) * 2021-04-16 2022-11-29 中国工程物理研究院机械制造工艺研究所 一种大口径平行平晶厚度分布的干涉测量方法
CN117739806A (zh) * 2022-09-20 2024-03-22 株式会社日本显示器 测量方法以及测量装置
CN120212885A (zh) * 2025-03-17 2025-06-27 常熟理工学院 一种用于原纸上胶均匀性的实时在线测量方法及装置

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US20070148792A1 (en) * 2005-12-27 2007-06-28 Marx David S Wafer measurement system and apparatus
CN101915547A (zh) * 2010-07-28 2010-12-15 深圳市斯尔顿科技有限公司 一种时域oct测量的方法和时域oct系统
CN102686973A (zh) * 2010-01-14 2012-09-19 普雷茨特激光技术有限公司 用于监视半导体晶片的薄化的原位测量晶片厚度的监视设备和方法、以及包括湿蚀刻设备和监视设备的薄化设备
CN102713504A (zh) * 2010-12-17 2012-10-03 松下电器产业株式会社 表面形状测定方法及表面形状测定装置
CN102893121A (zh) * 2010-04-26 2013-01-23 纳米技术公司 用于检查结构化对象的光学设备和方法
WO2014029703A1 (fr) * 2012-08-21 2014-02-27 Fogale Nanotech Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers

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US6847458B2 (en) * 2003-03-20 2005-01-25 Phase Shift Technology, Inc. Method and apparatus for measuring the shape and thickness variation of polished opaque plates
JP2008083059A (ja) * 2006-09-26 2008-04-10 David S Marx ウェーハの測定システム及び測定装置
JP2009049122A (ja) * 2007-08-17 2009-03-05 Fujifilm Corp 光半導体素子、該光半導体素子を用いた波長可変光源および光断層画像取得装置
GB2489722B (en) * 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US20070148792A1 (en) * 2005-12-27 2007-06-28 Marx David S Wafer measurement system and apparatus
CN102686973A (zh) * 2010-01-14 2012-09-19 普雷茨特激光技术有限公司 用于监视半导体晶片的薄化的原位测量晶片厚度的监视设备和方法、以及包括湿蚀刻设备和监视设备的薄化设备
CN102893121A (zh) * 2010-04-26 2013-01-23 纳米技术公司 用于检查结构化对象的光学设备和方法
CN101915547A (zh) * 2010-07-28 2010-12-15 深圳市斯尔顿科技有限公司 一种时域oct测量的方法和时域oct系统
CN102713504A (zh) * 2010-12-17 2012-10-03 松下电器产业株式会社 表面形状测定方法及表面形状测定装置
WO2014029703A1 (fr) * 2012-08-21 2014-02-27 Fogale Nanotech Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers

Also Published As

Publication number Publication date
EP3198220B1 (fr) 2023-06-07
SG11201702440VA (en) 2017-04-27
TW201614191A (en) 2016-04-16
EP3198220A1 (fr) 2017-08-02
FR3026481A1 (fr) 2016-04-01
EP3198220C0 (fr) 2023-06-07
FR3026481B1 (fr) 2021-12-24
KR20170059450A (ko) 2017-05-30
JP2017530358A (ja) 2017-10-12
US9958261B2 (en) 2018-05-01
US20170299376A1 (en) 2017-10-19
WO2016046072A1 (fr) 2016-03-31
CN106796099A (zh) 2017-05-31

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