CN106785918B - Translaser and preparation method thereof - Google Patents
Translaser and preparation method thereof Download PDFInfo
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- CN106785918B CN106785918B CN201710063242.9A CN201710063242A CN106785918B CN 106785918 B CN106785918 B CN 106785918B CN 201710063242 A CN201710063242 A CN 201710063242A CN 106785918 B CN106785918 B CN 106785918B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of translasers and preparation method thereof, belong to field of semiconductor lasers.Translaser of the present invention is multilayered structure, from top to bottom successively includes substrate, lower collector layer, collector layer, base, emission layer, and base includes at least a base layer and a quantum well layer；Translaser includes upper and lower two parts, and upper part is divided into column structure, and the boundary line of column structure and lower part is located in the lower collector layer；Columnar hole is equipped in column structure, the bottom of the columnar hole is the base, and portion of upper surface is arranged under translaser in the columnar hole bottom, collector in column structure upper surface, base electrode setting in emitter electrode setting.This translaser at work, does not need to provide feedback by grating or cleavage surface, and the resonance of laser can be realized as resonant cavity in the closed annular waveguide loop formed using itself column structure and columnar hole.
Description
Technical field
The present invention relates to field of semiconductor lasers more particularly to a kind of translaser and preparation method thereof.
Background technique
2005, a research group of Illinois university, the U.S. reported a kind of referred to as Heterojunction Bipolar Transistors
The semiconductor devices [Appl.Phys.Lett.Vol.87, P.131103 (2005)] of laser, merely with relatively simple outer
Manufacture craft is extended to, which realizes the light-emitting function of laser and the enlarging function of transistor simultaneously.With normal transistor
The difference is that introducing a Quantum Well in the base area of transistor.Under certain base-collector voltage, electronics
Base area can be injected by collecting zone, shone in quantum well region and hole-recombination.Light wave is between former and later two cleavage cavity reflection mirror surfaces
Roundtrip is amplified, and is emitted more than after some strength by end face.Therefore, this device not only has the telecommunications of conventional transistors
Number enlarging function, at the same be also equipped with converted from function from electric signal to optical signal [IEEE Spectrum, Vol 43, P.50
(2006)].Just because there is this feature, translaser be would be possible in photon interconnection, optoelectronic intagration (OEIC) and light letter
Number processing etc. play a great role.
However, reported translaser requires cleavage surface or the distributed feed-back reflecting mirror of anti-multilayered structure mentions
It could work for necessary light feedback, be unfavorable for device and other optical devices or electrical part single-chip integration.
Summary of the invention
The present invention provides a kind of translasers and preparation method thereof, at least partly to solve skill set forth above
Art problem.
Translaser of the present invention is multilayered structure, from top to bottom successively includes: substrate, lower collector layer, collector
Layer, base, emission layer, base include at least a base layer and a quantum well layer；
Translaser includes upper and lower two parts, and upper part is divided into column structure, the boundary line of column structure and lower part
In lower collector layer；
Columnar hole is equipped in column structure, the bottom of columnar hole is base.
Emitter electrode setting exists in column structure upper surface, base electrode setting in columnar hole bottom, collector setting
Portion of upper surface under translaser.
For the present invention according to the different there are two types of than more typical structure of base, one of which is that quantum well layer is placed in base stage
The centre of layer, another kind is the top that quantum well layer is located at base layer, specific as follows:
Base successively includes the first base layer, quantum well layer and the second base layer from top to bottom, and the bottom of columnar hole is the
Two base layers.First base layer and the second base layer are p-type doping, and substrate, lower collector layer and emitter layer are n-type doping；
Or first base layer and the second base layer be n-type doping, substrate, lower collector layer and emitter layer are p-type doping.
In second of structure, base successively includes base layer and quantum well layer from top to bottom, and the bottom of columnar hole is base stage
Layer.Base layer is p-type doping, and substrate, lower collector layer and emitter layer are n-type doping；Or base layer is n-type doping, lining
Bottom, lower collector layer and emitter layer are p-type doping.
Further, column structure and columnar hole are coaxial.
Further, quantum well layer is by more than one quantum well constitution.
Further, quantum well layer is N-shaped or p-type doping.
Further, one of substrate GaAs, InP, GaN, Si or SiC or a variety of.
Further, column structure and the cross sectional shape of columnar hole can be round, triangle or rectangular, when for circle,
Translaser further includes the output waveguide for being rectangle column, output waveguide and column structure layer structure having the same, and
Every layer of thickness is equal with the thickness of respective layer on column structure.
There are two types of output waveguides and the positional relationship of column structure, and one is the contact of section short side, another kind is that section is long
Side is opposite, specific as follows:
In the first situation, side where output waveguide shorter edge is in contact with column structure side, and contact line is
The symmetry axis of side where output waveguide shorter edge.
In second case, side where output waveguide longer sides is opposite with column structure side, column structure side
The shortest distance with output waveguide is d, wherein d > 0；And it is apart from the line that the point for being d is formed with column structure in output waveguide
The symmetry axis of side where output waveguide longer sides.
When column structure and the cross sectional shape of columnar hole are triangle or are rectangular, it is preferably provided on column structure apex angle anti-
Penetrate mirror.
The production method of the first above-mentioned structure transistor laser, includes the following steps:
On substrate successively grow lower collector layer, collector layer, the first base layer, quantum well layer, the second base layer and
Emission layer；
The columnar hole that etching forms column structure and is arranged in column structure；
Emitter electrode, base electrode and collector are made respectively；
Column structure etching stopping is among lower collector layer；Columnar hole etching stopping is on the second base layer.
The production method of above-mentioned second of structure transistor laser, includes the following steps:
Lower collector layer, collector layer, base layer, quantum well layer and emission layer are successively grown on substrate；
The columnar hole that etching forms column structure and is arranged in column structure；
Emitter electrode, base electrode and collector are made respectively；
Column structure etching stopping is among lower collector layer；Columnar hole etching stopping is on base layer.
It can be seen from the above technical proposal that translaser of the present invention and preparation method thereof is at least with beneficial below
One of effect:
(1) laser at work, does not need to provide feedback by grating or cleavage surface, using itself column structure with
The resonance of laser can be realized as resonant cavity in the closed annular waveguide loop that columnar hole is formed；
(2) microcavity translaser is easier to realize in technique, and being mainly manifested in device does not have optical grating construction,
Design and the making step that grating is not only omitted are also raw without the multiple epitaxial material usually required in common lasers production
It is long；And due to there is no cleavage surface structure, not only greatly facilitate its with other types light and electronic device it is integrated, also eliminate
Dependence to processing steps such as chip cleavage and end face coatings.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of first embodiment of the invention translaser.
Fig. 2 is device cross section structure schematic diagram of the translaser shown in Fig. 1 along AA '.
Fig. 3 is the device cross section structure schematic diagram in second embodiment of the invention translaser along AA '.
Fig. 4 is the translaser structural schematic diagram that the first has coupling output waveguide.
Fig. 5 is second of translaser structural schematic diagram for having coupling output waveguide.
Fig. 6 is square crystal pipe laser structure.
Fig. 7 is triangle translaser structure.
[attached drawing main element label declaration]
1- substrate；2- lower collector layer；3- collector layer；
4- base layer；The first base layer of 41-；The second base layer of 42-；
5- quantum well layer；6- emitter layer；7- columnar hole；
8- column structure；9- output waveguide；10- reflecting mirror；
S1- first surface；S2- second surface；C1- emitter electrode；
C2- base electrode；C3- collector.
Specific embodiment
The present invention provides a kind of production method of translaser, which is with micro-cavity structure
Translaser does not need to provide feedback by grating or cleavage surface, utilizes itself column structure and column at work
The resonance of laser can be realized as resonant cavity in the closed annular structure that hole is formed.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
First embodiment
In first exemplary embodiment of the invention, a kind of translaser and preparation method thereof is provided.Fig. 1
For the structural schematic diagram of first embodiment of the invention translaser.As shown in Figure 1, the present embodiment translaser packet
It includes: substrate 1, lower collector layer 2, column structure 8 and the columnar hole 7 being arranged in the column structure 8, wherein column structure 8
It is circle with 7 section of columnar hole, and is coaxially disposed, the bottom of the columnar hole 7, second surface S2 is arranged in first surface S1
It is arranged in lower collector layer surface, the upper surface of column structure 8 is arranged in emitter electrode C1, and base electrode C2 is arranged first
On the S1 of surface, collector C3 is arranged on second surface S2.
Referring to fig. 2, the present embodiment translaser successively includes: substrate 1, lower collector layer 2, collector from top to bottom
The 3, first base layer 41 of layer, quantum well layer 5, the second base layer 42 and emitter layer 6, the translaser top are divided into column
Shape structure 8 is provided with columnar hole 7 in column type 8.Columnar hole 7 and column structure 8 form closed annular, and as resonant cavity, substitution
Grating and cleavage surface are fed back, and cooperation output waveguide realizes the resonance of laser.
Each component part of the present embodiment translaser is described in detail individually below.
Column structure 8 is cylindrical type that is etched and being formed, and height H2, radius r2, column structure 8 is from top to bottom
It is followed successively by emitter layer 6, the second base layer 42, quantum well layer 5, the first base layer 41, collector layer 3 and lower collector layer 2, column
8 etching stopping of shape structure is among lower collector layer 2.
Columnar hole 7 is cylindrical hole that is etched and being formed, and height H1, radius r1, etching stopping is in second
On or in base layer 42.
The production method of translaser, includes the following steps: in the present embodiment
Step 1: lower collector layer 2, collector layer 3, base layer 41, quantum well layer 5, base stage are successively grown on substrate 1
Layer 42 and emitter layer 6；Wherein, base layer 41 and 42 is p-type doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6
For n-type doping, NPN transistor laser is constituted；Or wherein base layer 41 and 42 is n-type doping, meanwhile, substrate 1, next part
Electrode layer 2 and emitter layer 6 are p-type doping, constitute PNP transistor laser；
Step 2: etching formed radius be r1 cylindrical type columnar hole 7, etching stopping on or in base layer 42,
Form surface s1.
Step 3: etching forms the column structure 8 that radius is r2, and etching stopping is on or in lower collector layer 2, shape
At surface s2；
Step 4: emitter electrode C1 is made on emitter layer 6 respectively, makes base electrode on the s1 of surface
C2, and collector electrode C3 is made on the S2 of surface.
Wherein step 2 and the step of step 3, can be exchanged.
Wherein, column structure 8 and the center of circle of columnar hole 7 can be the same or different, and radius r1 and r2 have as follows
Relationship, r2 > r1；
Wherein, quantum well layer 5 can have single quantum well constitution, also may include n Quantum Well, >=2 n, Quantum Well
Material can be N-shaped or p-type doping；
Wherein, substrate 1 can be GaAs, InP, GaN, Si or SiC；
Wherein, the first base layer 41 and the second base layer 42 are the waveguide layer materials of quantum well layer, and to having shone, limitation is made
With；
Light is coupled by laser for convenience and is exported, there are two types of the positional relationships of output waveguide and column structure, a kind of
It is the contact of section short side, another kind is that section long side is opposite, specific as follows:
In the first situation, as shown in figure 4,9 width of the output waveguide is w, side and the column where shorter edge
8 side of shape structure is in contact, and contact line is the symmetry axis of side where 9 shorter edge of output waveguide.
In second case, as shown in figure 5,9 width of the output waveguide is w, side and the column where longer sides
8 side of shape structure is opposite, and the shortest distance of 8 side of column structure and the output waveguide 9 is d, wherein d > 0；And it is described
The line that the point for being d with the column structure distance in output waveguide is formed is the symmetrical of side where the output waveguide longer sides
Axis.
Translaser of the present invention is made, the cross sectional shape optimal selection of column structure 8 and columnar hole 7 is round, but
It is not limited to circle, for example, can also be triangle or rectangular, as shown in FIG. 6 and 7, each side length of columnar hole 7 is less than column
Each side length of shape structure 8, square shaped and triangle device can make reflecting mirror 10 in each apex angle.
So far, first embodiment of the invention translaser and preparation method thereof introduction finishes.
Second embodiment:
In second exemplary embodiment of the invention, a kind of translaser and preparation method thereof is provided.With
Fig. 1 is similar, and the present embodiment translaser includes: substrate 1, lower collector layer 2, column structure 8 and is arranged in the column
Columnar hole 7 in structure 8, wherein column structure 8 and 7 section of columnar hole are circle, and are coaxially disposed, first surface S1 setting
In the bottom of the columnar hole 7, second surface S2 setting is arranged in lower collector layer surface, emitter electrode C1 in column structure
8 upper surface, base electrode C2 are arranged on first surface S1, and collector C3 is arranged on second surface S2.
Referring to Fig. 3, translaser successively includes: substrate 1, lower collector layer 2, collector layer 3, base stage from top to bottom
Layer 4, quantum well layer 5 and emitter layer 6, the translaser top are divided into column structure 8, are provided in column structure 8
Columnar hole 7.Columnar hole 7 and column structure 8 form closed annular, and as resonant cavity, substitute grating and cleavage surface is fed back,
Output waveguide is cooperated to realize the resonance of laser.
Each component part of the present embodiment translaser is described in detail individually below.
Column structure 8 is cylindrical type that is etched and being formed, and height H2, radius r2, column structure 8 is from top to bottom
Be followed successively by emitter layer 6, quantum well layer 5, base layer 4, collector layer 3 and lower collector layer 2,8 etching stopping of column structure in
Among lower collector layer 2.
Columnar hole 7 is cylindrical bore that is etched and being formed, and height H1, radius r1, etching stopping is in base stage
On or in layer 4.
The production method of translaser, includes the following steps: in the present embodiment
Step 1: lower collector layer 2, collector layer 3, base layer 4, quantum well layer 5 and transmitting are successively grown on substrate 1
Pole layer 6；Wherein, base layer 4 is p-type doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6 are n-type doping, are constituted
NPN transistor laser；Or wherein base layer 4 is n-type doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6
For p-type doping, PNP transistor laser is constituted；
Step 2: etching forms the circular cylindrical shape hole 7 that radius is r1, and etching stopping is formed on or in base layer 4
Surface s1.
Step 3: etching formed radius be r2 cylindrical structure 8, etching stopping on lower collector layer 2 or it
In, form surface s2；
Step 4: emitter electrode C1 is made on emitter layer 6 respectively, makes base electrode C2 on the s1 of surface,
And collector electrode C3 is made on the S2 of surface；
Wherein step 2 and the step of step 3, can be exchanged.
Wherein, column structure 8 and the center of circle of columnar hole 7 can be the same or different, and radius r1 and r2 have as follows
Relationship, r2 > r1；
Wherein, quantum well layer 5 can have single quantum well constitution, also may include n Quantum Well, >=2 n, Quantum Well
Material can be N-shaped or p-type doping；
Wherein, substrate 1 can be GaAs, InP, GaN, Si or SiC；
Wherein, the first base layer 41 and the second base layer 42 are the waveguide layer materials of quantum well layer, and to having shone, limitation is made
With；
Light is coupled by laser for convenience and is exported, there are two types of the positional relationships of output waveguide 9 and column structure 8, and one
Kind is the contact of section short side, and another kind is that section long side is opposite, specific as follows:
In the first situation, as shown in figure 4,9 width of the output waveguide is w, side and the column where shorter edge
8 side of shape structure is in contact, and contact line is the symmetry axis of side where 9 shorter edge of output waveguide.
In second case, as shown in figure 5,9 width of the output waveguide is w, side and the column where longer sides
8 side of shape structure is opposite, and the shortest distance of 8 side of column structure and the output waveguide 9 is d, wherein d > 0；And it is described
The line that the point for being d with the column structure distance in output waveguide is formed is the symmetrical of side where the output waveguide longer sides
Axis.
The cross sectional shape of production translaser of the present invention, column structure 8 and columnar hole 7 is not limited to circle, and citing comes
It says, can also be triangle or rectangular, as shown in FIG. 6 and 7, each side length of columnar hole 7 is less than each side length of column structure 8,
Square shaped and triangle device can make reflecting mirror 10 in each apex angle.
So far, second embodiment of the invention translaser and preparation method thereof introduction finishes.
Due to not needing grating in the laser fabrication method of above-mentioned two groups of embodiment introductions, so being omitted in production
The design and making step of grating are also without the multiple epitaxial material growth usually required in common lasers production；And by
In there is no cleavage surface structure, not only greatly facilitate its with other types light and electronic device it is integrated, also eliminate to chip
The dependence of the processing steps such as cleavage and end face coating.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used to limit this
The protection scope of invention.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (17)
1. a kind of translaser, which is characterized in that the translaser is multilayered structure, successively includes from top to bottom
Substrate, lower collector layer, collector layer, base, emission layer, the base include at least a base layer and a quantum well layer；
The translaser includes upper and lower two parts, and upper part is divided into column structure, the column structure and lower part
Boundary line is located in the lower collector layer；
Columnar hole is equipped in the column structure, the bottom of the columnar hole is the base；
Emitter electrode setting exists in column structure upper surface, base electrode setting in the columnar hole bottom, collector setting
Portion of upper surface under the translaser.
2. translaser according to claim 1, which is characterized in that the base successively includes first from top to bottom
Base layer, quantum well layer and the second base layer, the bottom of the columnar hole are second base layer.
3. translaser according to claim 2, it is characterised in that:
First base layer and second base layer are p-type doping, the substrate, the lower collector layer and the transmitting
Pole layer is n-type doping；Or
First base layer and second base layer are n-type doping, the substrate, the lower collector layer and the transmitting
Pole layer is p-type doping.
4. translaser according to claim 1, which is characterized in that the base successively includes base stage from top to bottom
Layer and quantum well layer, the bottom of the columnar hole are the base layer.
5. translaser according to claim 4, it is characterised in that:
The base layer is p-type doping, and the substrate, the lower collector layer and the emitter layer are n-type doping；Or
The base layer is n-type doping, and the substrate, the lower collector layer and the emitter layer are p-type doping.
6. the translaser according to claim 3 or 5, which is characterized in that the column structure and columnar hole are coaxial.
7. the translaser according to claim 3 or 5, which is characterized in that the quantum well layer is by more than one
Quantum well constitution.
8. the translaser according to claim 3 or 5, which is characterized in that the quantum well layer is that N-shaped or p-type are mixed
It is miscellaneous.
9. the translaser according to claim 3 or 5, which is characterized in that the substrate is GaAs, InP, GaN, Si
Or one of SiC or a variety of.
10. the translaser according to claim 3 or 5, which is characterized in that section of the column structure and columnar hole
Face shape is circle.
11. translaser according to claim 10, which is characterized in that further include:
It is rectangle the output waveguide of column, the output waveguide and column structure layer structure having the same, and every layer of thickness
It spends equal with the thickness of respective layer on the column structure.
12. translaser according to claim 11, which is characterized in that side where the output waveguide shorter edge
It is in contact with the column structure side, and contact line is the symmetry axis of side where the output waveguide shorter edge.
13. translaser according to claim 11, which is characterized in that side where the output waveguide longer sides
Opposite with the column structure side, the shortest distance of the column structure side and the output waveguide is d, wherein d > 0；
And the line in the output waveguide with the column structure apart from the point formation for being d is side where the output waveguide longer sides
Symmetry axis.
14. the translaser according to claim 3 or 5, which is characterized in that section of the column structure and columnar hole
Face shape is triangle or rectangular.
15. translaser according to claim 14, which is characterized in that the column structure apex angle is equipped with reflection
Mirror.
16. a kind of production method of translaser described in Claims 2 or 3, which comprises the steps of:
Lower collector layer, collector layer, the first base layer, quantum well layer, the second base layer and transmitting are successively grown on substrate
Layer；
The columnar hole that etching forms column structure and is arranged in the column structure；
Emitter electrode, base electrode and collector are made respectively；
The column structure etching stopping is among the lower collector layer；The columnar hole etching stopping is in second base stage
On layer.
17. a kind of production method of claim 4 or 5 translaser, which comprises the steps of:
Lower collector layer, collector layer, base layer, quantum well layer and emission layer are successively grown on substrate；
The columnar hole that etching forms column structure and is arranged in the column structure；
Emitter electrode, base electrode and collector are made respectively；
The column structure etching stopping is among the lower collector layer；The columnar hole etching stopping in the base layer it
On.
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| CN111416277B (en) * | 2020-02-27 | 2021-07-20 | 电子科技大学 | Multipole quantum cascade ring laser |
| CN111416274B (en) * | 2020-02-27 | 2021-07-02 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
| CN111446623B (en) * | 2020-02-27 | 2021-05-11 | 电子科技大学 | Three-end type S-shaped annular quantum cascade laser |
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| CN101238619A (en) * | 2005-02-28 | 2008-08-06 | 伊利诺斯大学理事会 | Semiconductor bipolar light emitting and laser devices and methods |
| CN104485578A (en) * | 2014-12-11 | 2015-04-01 | 中国科学院半导体研究所 | Transistor laser, and manufacturing method thereof |
| CN105932542A (en) * | 2016-07-13 | 2016-09-07 | 南京航空航天大学 | Transistor vertical-cavity surface-emitting laser |
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