CN106785918A - Translaser and preparation method thereof - Google Patents
Translaser and preparation method thereof Download PDFInfo
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- CN106785918A CN106785918A CN201710063242.9A CN201710063242A CN106785918A CN 106785918 A CN106785918 A CN 106785918A CN 201710063242 A CN201710063242 A CN 201710063242A CN 106785918 A CN106785918 A CN 106785918A
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- layer
- column structure
- translaser
- cylinder hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Abstract
The invention provides a kind of translaser and preparation method thereof, belong to field of semiconductor lasers.Translaser of the present invention is sandwich construction, includes substrate, lower collector layer, collector layer, basic unit, emission layer successively from top to bottom, and basic unit at least includes a base layer and a quantum well layer；Translaser includes upper and lower two parts, is partly thereon column structure, and the boundary line of column structure and lower part is located in lower collector layer；Cylinder hole is provided with column structure, the bottom of the cylinder hole is the basic unit, and emitter electrode is arranged on column structure upper surface, and base electrode is arranged on the cylinder hole bottom, and colelctor electrode is arranged on portion of upper surface under translaser.This translaser is operationally, it is not necessary to provide feedback by grating or cleavage surface, and the closed annular waveguide loop formed by the use of itself column structure and cylinder hole is used as resonator, you can realize the resonance of laser.
Description
Technical field
The present invention relates to field of semiconductor lasers, more particularly to a kind of translaser and preparation method thereof.
Background technology
2005, a research group of Illinois university of the U.S. reported a kind of referred to as HBT
The semiconductor devices [Appl.Phys.Lett.Vol.87, P.131103 (2005)] of laser, merely with relatively simple outer
Manufacture craft is extended to, the device realizes the lighting function of laser and the enlarging function of transistor simultaneously.With normal transistor
Difference be that a SQW is introduced in the base of transistor.Under certain base-collector voltage, electronics
Base can be injected by collecting zone, be lighted in quantum well region and hole-recombination.Light wave is between former and later two cleavage cavity reflection minute surfaces
Roundtrip is amplified, more than after some strength by end face outgoing.Therefore, this device does not only have the telecommunications of conventional transistors
Number enlarging function, at the same be also equipped with being changed to optical signal from electric signal function [IEEE Spectrum, Vol 43, P.50
(2006)].Just because there is this feature, translaser would be possible in photon interconnection, optoelectronic intagration (OEIC) and light letter
Number treatment etc. aspect play a great role.
However, the translaser reported is required for cleavage surface or the distributed feed-back speculum of anti-sandwich construction to carry
Could be worked for necessary light feedback, be unfavorable for device and other optical devices or electrical part single-chip integration.
The content of the invention
The invention provides a kind of translaser and preparation method thereof, at least partly to solve skill set forth above
Art problem.
Translaser of the present invention is sandwich construction, is included successively from top to bottom：Substrate, lower collector layer, colelctor electrode
Layer, basic unit, emission layer, basic unit at least include a base layer and a quantum well layer；
Translaser includes upper and lower two parts, and part is the boundary line of column structure, column structure and lower part thereon
In lower collector layer；
Cylinder hole is provided with column structure, the bottom of cylinder hole is basic unit.
Emitter electrode is arranged on column structure upper surface, and base electrode is arranged on cylinder hole bottom, and colelctor electrode is arranged on
Portion of upper surface under translaser.
The present invention has two kinds than more typical structure according to the difference of basic unit, and one of which is that quantum well layer is placed in into base stage
The centre of layer, another kind is the top that quantum well layer is located at base layer, specific as follows：
Basic unit includes the first base layer, quantum well layer and the second base layer successively from top to bottom, and the bottom of cylinder hole is the
Two base layers.First base layer and the second base layer are p-type doping, and substrate, lower collector layer and emitter layer are that N-shaped adulterates；
Or first base layer and the second base layer be N-shaped doping, substrate, lower collector layer and emitter layer are p-type doping.
In second structure, basic unit includes base layer and quantum well layer successively from top to bottom, and the bottom of cylinder hole is base stage
Layer.Base layer is adulterated for p-type, and substrate, lower collector layer and emitter layer adulterate for N-shaped；Or base layer is N-shaped doping, lining
Bottom, lower collector layer and emitter layer adulterate for p-type.
Further, column structure is coaxial with cylinder hole.
Further, quantum well layer is by more than one quantum well constitution.
Further, quantum well layer is that N-shaped or p-type are adulterated.
Further, substrate is one or more in GaAs, InP, GaN, Si or SiC.
Further, the cross sectional shape of column structure and cylinder hole can be circular, triangle or square, when for circle,
Translaser also includes being rectangle the output waveguide of post, and output waveguide has identical Rotating fields with column structure, and
Thickness of every layer of the thickness with respective layer on column structure is equal.
Output waveguide has two kinds with the position relationship of column structure, and one kind is section short side contact, and another kind is section long
Side is relative, specific as follows：
In the first situation, side where output waveguide shorter edge is in contact with column structure side, and contact line is
The symmetry axis of side where output waveguide shorter edge.
In second case, side where output waveguide longer sides is relative with column structure side, column structure side
It is d, wherein d ＞ 0 with the beeline of output waveguide；And the line formed with the point that column structure distance is d in output waveguide is
The symmetry axis of side where output waveguide longer sides.
When column structure and cylinder hole cross sectional shape for triangle or it is square when, be preferably provided with column structure drift angle anti-
Penetrate mirror.
The preparation method of above-mentioned the first structure transistor laser, comprises the following steps：
Grown successively on substrate lower collector layer, collector layer, the first base layer, quantum well layer, the second base layer and
Emission layer；
Etching forms column structure and the cylinder hole being arranged in column structure；
Emitter electrode, base electrode and colelctor electrode are made respectively；
Column structure etching stopping is among lower collector layer；Cylinder hole etching stopping is on the second base layer.
The preparation method of above-mentioned second structure transistor laser, comprises the following steps：
Grow lower collector layer, collector layer, base layer, quantum well layer and emission layer successively on substrate；
Etching forms column structure and the cylinder hole being arranged in column structure；
Emitter electrode, base electrode and colelctor electrode are made respectively；
Column structure etching stopping is among lower collector layer；Cylinder hole etching stopping is on the second base layer.
From above-mentioned technical proposal as can be seen that translaser of the present invention and preparation method thereof is at least with following beneficial
One of effect：
(1) laser is operationally, it is not necessary to provide feedback by grating or cleavage surface, using itself column structure with
The closed annular waveguide loop that cylinder hole is formed is used as resonator, you can realize the resonance of laser；
(2) microcavity translaser is easier to realize that being mainly manifested in device does not have optical grating construction in technique,
The design and making step of grating are not only eliminated also without the multiple epitaxial material life generally needed in common lasers making
It is long；And due to there is no cleavage surface structure, not only greatly facilitate it with other types light and electronic device it is integrated, also eliminate
Dependence to processing steps such as chip cleavage and end face coatings.
Brief description of the drawings
Fig. 1 is the structural representation of first embodiment of the invention translaser.
Fig. 2 is device cross section structure schematic diagram of the translaser shown in Fig. 1 along AA '.
Fig. 3 is the device cross section structure schematic diagram in second embodiment of the invention translaser along AA '.
Fig. 4 is the first translaser structural representation with coupling output waveguide.
Fig. 5 is second translaser structural representation with coupling output waveguide.
Fig. 6 is square crystal pipe laser structure.
Fig. 7 is triangle translaser structure.
【Accompanying drawing main element label declaration】
1- substrates；2- lower collectors layer；3- collector layers；
4- base layers；The base layers of 41- first；The base layers of 42- second；
5- quantum well layers；6- emitter layers；7- cylinder holes；
8- column structures；9- output waveguides；10- speculums；
S1- first surfaces；S2- second surfaces；C1- emitter electrodes；
C2- base electrodes；C3- colelctor electrodes.
Specific embodiment
The invention provides a kind of preparation method of translaser, the translaser is with micro-cavity structure
Translaser, operationally, it is not necessary to feedback is provided by grating or cleavage surface, using itself column structure and column
The closed annular structure that hole is formed is used as resonator, you can realize the resonance of laser.
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
First embodiment
In first exemplary embodiment of the invention, there is provided a kind of translaser and preparation method thereof.Fig. 1
It is the structural representation of first embodiment of the invention translaser.As shown in figure 1, the present embodiment translaser bag
Include：Substrate 1, lower collector layer 2, column structure 8 and the cylinder hole 7 being arranged in the column structure 8, wherein column structure 8
Circle is with the section of cylinder hole 7, and is coaxially disposed, first surface S1 is arranged on the bottom of the cylinder hole 7, second surface S2
Lower collector layer surface is arranged on, emitter electrode C1 is arranged on the upper surface of column structure 8, and base electrode C2 is arranged on first
On the S1 of surface, colelctor electrode C3 is arranged on second surface S2.
Referring to Fig. 2, the present embodiment translaser includes successively from top to bottom：Substrate 1, lower collector layer 2, colelctor electrode
The 3, first base layer 41 of layer, quantum well layer 5, the second base layer 42 and emitter layer 6, the translaser top is divided into post
Cylinder hole 7 is provided with shape structure 8, column type 8.Cylinder hole 7 and the composition closed annular of column structure 8, and as resonator, substitute
Grating and cleavage surface are fed back, and coordinate output waveguide to realize the resonance of laser.
Each part to the present embodiment translaser is described in detail individually below.
The cylindrical type that column structure 8 is formed for etched, it is highly H2, and radius is r2, and column structure 8 is from top to bottom
It is followed successively by emitter layer 6, the second base layer 42, quantum well layer 5, the first base layer 41, collector layer 3 and lower collector layer 2, post
The etching stopping of shape structure 8 is among lower collector layer 2.
The cylindrical hole that cylinder hole 7 is formed for etched, it is highly H1, and radius is r1, and its etching stopping is in second
On base layer 42 or among.
The preparation method of translaser, comprises the following steps in the present embodiment：
Step one：Grow lower collector layer 2, collector layer 3, base layer 41, quantum well layer 5, base stage successively on substrate 1
Layer 42 and emitter layer 6；Wherein, base layer 41 and 42 is p-type doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6
For N-shaped adulterates, NPN transistor laser is constituted；Or wherein base layer 41 and 42 is N-shaped doping, meanwhile, substrate 1, next part
Electrode layer 2 and emitter layer 6 are p-type doping, constitute PNP transistor laser；
Step 2：Etching formed radius be r1 cylindrical type cylinder hole 7, etching stopping on base layer 42 or among,
Form surface s1.
Step 3：Etching formed radius be r2 column structure 8, etching stopping in lower collector layer 2 on or among, shape
Into surface s2；
Step 4：Emitter electrode C1 is made on emitter layer 6 respectively, base electrode is made on the s1 of surface
C2, and collector electrode C3 is made on the S2 of surface.
Step 2 and can wherein exchange the step of step 3.
Wherein, column structure 8 can be the same or different with the center of circle of cylinder hole 7, and its radius r1 and r2 has as follows
Relation, r2 ＞ r1；
Wherein, quantum well layer 5 can have single quantum well constitution, it is also possible to including n SQW, n ＞=2, SQW
Material can be that N-shaped or p-type are adulterated；
Wherein, substrate 1 can be GaAs, InP, GaN, Si or SiC；
Wherein, the first base layer 41 and the second base layer 42 are the waveguide layer materials of quantum well layer, and to having lighted, limitation is made
With；
Light is coupled by laser is for convenience exported, output waveguide has two kinds, one kind with the position relationship of column structure
It is section short side contact, another kind is relative section side long, specific as follows：
In the first situation, as shown in figure 4, the width of the output waveguide 9 is w, side and the post where shorter edge
The side of shape structure 8 is in contact, and contact line is the symmetry axis of side where the shorter edge of the output waveguide 9.
In second case, as shown in figure 5, the width of the output waveguide 9 is w, side and the post where longer sides
The side of shape structure 8 is relative, and the side of the column structure 8 is d, wherein d ＞ 0 with the beeline of the output waveguide 9；And it is described
With column structure distance for the line that the point of d is formed is the symmetrical of side where the output waveguide longer sides in output waveguide
Axle.
Translaser of the present invention is made, the cross sectional shape optimal selection of column structure 8 and cylinder hole 7 is circular, but
It is not limited to circle, for example, can also be triangle or square, as shown in FIG. 6 and 7, each length of side of cylinder hole 7 is less than post
Each length of side of shape structure 8, square shaped and triangle device, can make speculum 10 in each drift angle.
So far, first embodiment of the invention translaser and preparation method thereof is introduced and finished.
Second embodiment：
In first exemplary embodiment of the invention, there is provided a kind of translaser and preparation method thereof.With
Fig. 1 is similar to, and the present embodiment translaser includes：Substrate 1, lower collector layer 2, column structure 8 and it is arranged on the column
Cylinder hole 7 in structure 8, wherein column structure 8 and the section of cylinder hole 7 are circle, and are coaxially disposed, and first surface S1 is set
In the bottom of the cylinder hole 7, second surface S2 is arranged on lower collector layer surface, and emitter electrode C1 is arranged on column structure
8 upper surface, base electrode C2 is arranged on first surface S1, and colelctor electrode C3 is arranged on second surface S2.
Referring to Fig. 3, translaser includes successively from top to bottom：Substrate 1, lower collector layer 2, collector layer 3, base stage
Layer 4, quantum well layer 5 and emitter layer 6, the translaser top are divided into column structure 8, and column structure 8 is interior to be provided with
Cylinder hole 7.Cylinder hole 7 and the composition closed annular of column structure 8, and as resonator, substitute grating and cleavage surface is fed back,
Output waveguide is coordinated to realize the resonance of laser.
Each part to the present embodiment translaser is described in detail individually below.
The cylindrical type that column structure 8 is formed for etched, it is highly H2, and radius is r2, and column structure 8 is from top to bottom
Be followed successively by emitter layer 6, quantum well layer 5, base layer 4, collector layer 3 and lower collector layer 2, the etching stopping of column structure 8 in
Among lower collector layer 2.
The cylindrical bore that cylinder hole 7 is formed for etched, it is highly H1, and radius is r1, and its etching stopping is in base stage
Layer 4 on or among.
The preparation method of translaser, comprises the following steps in the present embodiment：
Step 1：Growth lower collector layer 2, collector layer 3, base layer 4, quantum well layer 5 and transmitting successively on substrate 1
Pole layer 6；Wherein, base layer 4 is p-type doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6 are that N-shaped adulterates, and are constituted
NPN transistor laser；Or wherein base layer 4 is N-shaped doping, meanwhile, substrate 1, lower collector layer 2 and emitter layer 6
For p-type is adulterated, PNP transistor laser is constituted；
Step 2：Etching formed radius be r1 circular cylindrical shape hole 7, etching stopping on base layer 4 or among, formed
Surface s1.
Step 3：Etching formed radius be r2 cylindrical structure 8, etching stopping in lower collector layer 2 on or it
In, form surface s2；
Step 4：Emitter electrode C1 is made on emitter layer 6 respectively, base electrode C2 is made on the s1 of surface,
And collector electrode C3 is made on the S2 of surface；
Step 2 and can wherein exchange the step of step 3.
Wherein, column structure 8 can be the same or different with the center of circle of cylinder hole 7, and its radius r1 and r2 has as follows
Relation, r2 ＞ r1；
Wherein, quantum well layer 5 can have single quantum well constitution, it is also possible to including n SQW, n ＞=2, SQW
Material can be that N-shaped or p-type are adulterated；
Wherein, substrate 1 can be GaAs, InP, GaN, Si or SiC；
Wherein, the first base layer 41 and the second base layer 42 are the waveguide layer materials of quantum well layer, and to having lighted, limitation is made
With；
Light is coupled by laser is for convenience exported, output waveguide 9 has two kinds, one with the position relationship of column structure 8
It is section short side contact to plant, and another kind is relative section side long, specific as follows：
In the first situation, as shown in figure 4, the width of the output waveguide 9 is w, side and the post where shorter edge
The side of shape structure 8 is in contact, and contact line is the symmetry axis of side where the shorter edge of the output waveguide 9.
In second case, as shown in figure 5, the width of the output waveguide 9 is w, side and the post where longer sides
The side of shape structure 8 is relative, and the side of the column structure 8 is d, wherein d ＞ 0 with the beeline of the output waveguide 9；And it is described
With column structure distance for the line that the point of d is formed is the symmetrical of side where the output waveguide longer sides in output waveguide
Axle.
The cross sectional shape of making translaser of the present invention, column structure 8 and cylinder hole 7 is not limited to circle, and citing comes
Say, can also be triangle or square, as shown in FIG. 6 and 7, each length of side of each length of side less than column structure 8 of cylinder hole 7,
Square shaped and triangle device, can make speculum 10 in each drift angle.
So far, second embodiment of the invention translaser and preparation method thereof is introduced and finished.
Due to not needing grating in the laser fabrication method of above-mentioned two groups of embodiment introductions, so when making, omitting
The multiple epitaxial material growth that the design and making step of grating generally need in also being made without common lasers；And by
In there is no cleavage surface structure, not only greatly facilitate it with other types light and electronic device it is integrated, also eliminate to chip
The dependence of the processing step such as cleavage and end face coating.
Also, it should be noted that the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
To term, for example " on ", D score, "front", "rear", "left", "right" etc., be only the direction of refer to the attached drawing, not for limiting this
The protection domain of invention.Additionally, unless specifically described or the step of must sequentially occur, the order of above-mentioned steps has no and is limited to
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, be mixed with each other collocation using or used with other embodiment mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, should be understood that and the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in guarantor of the invention
Within the scope of shield.
Claims (17)
1. a kind of translaser, it is characterised in that the translaser is sandwich construction, is included successively from top to bottom
Substrate, lower collector layer, collector layer, basic unit, emission layer, the basic unit at least include a base layer and a quantum well layer；
The translaser includes upper and lower two parts, and part is column structure thereon, the column structure and lower part
Boundary line is located in lower collector layer；
Cylinder hole is provided with the column structure, the bottom of the cylinder hole is the basic unit；
Emitter electrode is arranged on column structure upper surface, and base electrode is arranged on the cylinder hole bottom, and colelctor electrode is arranged on
Portion of upper surface under the translaser.
2. translaser according to claim 1, it is characterised in that the basic unit includes first successively from top to bottom
Base layer, quantum well layer and the second base layer, the bottom of the cylinder hole is second base layer.
3. translaser according to claim 2, it is characterised in that：
First base layer and second base layer are p-type doping, the substrate, lower collector layer and the transmitting
Pole layer adulterates for N-shaped；Or
First base layer and second base layer are N-shaped doping, the substrate, lower collector layer and the transmitting
Pole layer adulterates for p-type.
4. translaser according to claim 1, it is characterised in that the basic unit includes base stage successively from top to bottom
Layer and quantum well layer, the bottom of the cylinder hole is the base layer.
5. translaser according to claim 4, it is characterised in that：
The base layer is adulterated for p-type, and the substrate, lower collector layer and the emitter layer adulterate for N-shaped；Or
The base layer is adulterated for N-shaped, and the substrate, lower collector layer and the emitter layer adulterate for p-type.
6. the translaser according to claim 3 or 5, it is characterised in that the column structure is coaxial with cylinder hole.
7. the translaser according to claim 3 or 5, it is characterised in that the quantum well layer is by more than one
Quantum well constitution.
8. the translaser according to claim 3 or 5, it is characterised in that the quantum well layer is that N-shaped or p-type are mixed
It is miscellaneous.
9. the translaser according to claim 3 or 5, it is characterised in that the substrate is GaAs, InP, GaN, Si
Or one or more in SiC.
10. the translaser according to claim 3 or 5, it is characterised in that the column structure and cylinder hole cut
Face is shaped as circle.
11. translasers according to claim 10, it is characterised in that also include：
The output waveguide of post is rectangle, the output waveguide and the column structure have an identical Rotating fields, and every layer of thickness
The thickness spent with respective layer on the column structure is equal.
12. translasers according to claim 11, it is characterised in that side where the output waveguide shorter edge
It is in contact with the column structure side, and contact line is the symmetry axis of side where the output waveguide shorter edge.
13. translasers according to claim 11, it is characterised in that side where the output waveguide longer sides
Relative with the column structure side, the column structure side is d, wherein d ＞ 0 with the beeline of the output waveguide；
And put the line for being formed side where the output waveguide longer sides for d with column structure distance in the output waveguide
Symmetry axis.
14. translaser according to claim 3 or 5, it is characterised in that the column structure and cylinder hole cut
Face is shaped as triangle or square.
15. translasers according to claim 14, it is characterised in that the column structure drift angle is provided with reflection
Mirror.
The preparation method of translaser described in a kind of 16. Claims 2 or 3, it is characterised in that comprise the following steps：
Grow lower collector layer, collector layer, the first base layer, quantum well layer, the second base layer and transmitting successively on substrate
Layer；
Etching forms column structure and the cylinder hole being arranged in the column structure；
Emitter electrode, base electrode and colelctor electrode are made respectively；
The column structure etching stopping is among lower collector layer；The cylinder hole etching stopping is in second base stage
On layer.
The preparation method of translaser described in a kind of 17. claims 4 or 5, it is characterised in that comprise the following steps：
Grow lower collector layer, collector layer, base layer, quantum well layer and emission layer successively on substrate；
Etching forms column structure and the cylinder hole being arranged in the column structure；
Emitter electrode, base electrode and colelctor electrode are made respectively；
The column structure etching stopping is among lower collector layer；The cylinder hole etching stopping is in second base stage
On layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111416277A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Multipole quantum cascade ring laser |
| CN111416274A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
| CN111446623A (en) * | 2020-02-27 | 2020-07-24 | 电子科技大学 | Three-end type S-shaped annular quantum cascade laser |
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| US20060108574A1 (en) * | 2004-11-22 | 2006-05-25 | Eun Soo Nam | Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process |
| CN101238619A (en) * | 2005-02-28 | 2008-08-06 | 伊利诺斯大学理事会 | Semiconductor bipolar light emitting and laser devices and methods |
| CN104485578A (en) * | 2014-12-11 | 2015-04-01 | 中国科学院半导体研究所 | Transistor laser, and manufacturing method thereof |
| CN105932542A (en) * | 2016-07-13 | 2016-09-07 | 南京航空航天大学 | Transistor vertical-cavity surface-emitting laser |
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| CN111416277A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Multipole quantum cascade ring laser |
| CN111416274A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
| CN111446623A (en) * | 2020-02-27 | 2020-07-24 | 电子科技大学 | Three-end type S-shaped annular quantum cascade laser |
| CN111446623B (en) * | 2020-02-27 | 2021-05-11 | 电子科技大学 | Three-end type S-shaped annular quantum cascade laser |
| CN111416274B (en) * | 2020-02-27 | 2021-07-02 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
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