CN106785899B - The nitride mode locking Echo Wall micro laser and preparation method thereof of one direction transmitting - Google Patents
The nitride mode locking Echo Wall micro laser and preparation method thereof of one direction transmitting Download PDFInfo
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- CN106785899B CN106785899B CN201611181916.7A CN201611181916A CN106785899B CN 106785899 B CN106785899 B CN 106785899B CN 201611181916 A CN201611181916 A CN 201611181916A CN 106785899 B CN106785899 B CN 106785899B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
- H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
Abstract
The invention discloses a kind of nitride mode locking Echo Wall micro lasers and preparation method thereof of one direction transmitting; nitride material on a silicon substrate; hanging asymmetric annular membrane microcavity is prepared using photoetching process and silicon etching process; the horizontal cross-sectional shapes of the microcavity are " annulus+cone angle+notch "; gold nanorods are modified in microcavity notch as semiconductor saturated absorbing body; under the conditions of optical pumping; gold nanorods carry out modeling modulation, the final nitride mode locking echo wall die laser for realizing one direction transmitting to the laser in microcavity.
Description
Technical field
The invention belongs to laser technology field, be related to a kind of one direction transmitting nitride mode locking Echo Wall laser and its
Preparation method.
Background technique
Laser can be divided into three classes by cavity body structure: the first kind is light random to swash what nano particle interface accidental resonance was formed
Light；Second class is that light forms the F- that resonance generates using two end faces of micro-nano rice noodles as hysteroscope in one-dimensional micro nano structure
P laser.The former scattering loss is very big, is without a fixed pattern；The end face loss of the latter is very big, is also difficult to obtain high-quality (Q), low
Threshold value laser.In consideration of it, the Echo Wall for utilizing its total internal reflection to be formed using microcavitys such as the biggish micron bar of scale or micron dish
Mould (WGM) laser then provides the approach of an acquisition high-quality laser for people.
But the gallium nitride single crystal WGM laser of circular hanging micro- dish or hexagon as optic communication device or integrates
Outstanding not enough for optical device, because it does not have single laser direction output, and without passing through mode locking, output is
Multi-mode laser and quality factor is not high enough, is unfavorable for and other opto-electronic devices are integrated.
Therefore, how to optimize WGM micro-cavity structure, realize the high Q Low threshold nitride mode locking WGM laser of unidirectional transmitting
It is the problem to be solved in the present invention.
Summary of the invention
Technical problem: the present invention provides a kind of with high optical gain and extremely low loss, is conducive to and photoelectron
The nitride mode locking Echo Wall micro laser of the integrated one direction transmitting of device, while providing a kind of good manufacturability, processing essence
Spend the method for the high nitride mode locking Echo Wall micro laser for preparing above-mentioned one direction transmitting.
Technical solution: the nitride mode locking Echo Wall micro laser of one direction transmitting of the invention, with silica-based nitride crystalline substance
Piece is carrier, including silicon base, the silicon column being arranged in the silicon base, the hanging asymmetric annular supported by the silicon column
Film micro-cavity structure, the asymmetric annular membrane micro-cavity structure are made of nitride, and ontology, setting including annular are described
The microcavity of body interior, the protrusion cone angle that ontology outer circumferential is arranged in are provided on the ontology and are connected to microcavity with outside
Notch, the prominent cone angle surrounds by camber line on ontology tangent to periphery, ontology circumference and this external camber line, and described is external
The angle that intersects with ontology circumference of camber line be acute angle, be modified with metal nano-rod in the notch.
Further, in micro laser of the present invention, silicon base and silicon column are the silicon substrate layer in silica-based nitride chip
What upper etching obtained.
Further, in micro laser of the present invention, the gold nanorods modified in notch are used as under the conditions of optical pumping and partly lead
Body saturated absorbing body carries out mode modulation to the laser in microcavity, realizes the nitride mode locking Echo Wall laser of one direction transmitting.
The present invention is prepared not using photoetching and reactive ion etching process and inductively coupled plasma body deep silicon etching technique
With the hanging notched asymmetric free standing structure film microcavity of size.Reasonable processing step is designed, the shape including etching template
Shape is obtained by columnar stays and the smooth of the edge hanging notched non-to annular membrane microcavity.Reduce the bending damage of microcavity
Scattering loss caused by consumption and side are coarse.
The method that the present invention prepares the nitride mode locking Echo Wall micro laser of above-mentioned one direction transmitting, steps are as follows:
Step 1: the spin coating photoresist on nitride layer, then using optical lithography techniques on the photoresist layer of spin coating
Define the figure of asymmetric annular membrane micro-cavity structure described in claim 1；
Step 2: using electron beam evaporation plating system on nitride layer deposited metal nickel, then remove remaining photoresist,
The metallic nickel left is as hard mask layer；
Step 3: the hard mask layer is based on, using the downward etch nitride layer of reactive ion etching technology until silicon
The upper surface of substrate layer, thus by the nitride layer of the pattern transfer defined in the second step to silica-based nitride chip
In, notched asymmetric annular membrane micro-cavity structure is obtained, then remains in nitrogen using dust technology or the removal of nickel etching liquid
The metallic nickel of compound layer surface；
Step 4: making formation in silicon substrate layer support asymmetric annular membrane micro- using isotropic wet process silicon lithography
The silicon column of cavity configuration and silicon base positioned at bottom surface, keep asymmetric annular membrane micro-cavity structure hanging；
Step 5: asymmetric annular membrane micro-cavity structure is immersed in the solution of metal nano-rod, make metal nano-rod
It modifies in notch, obtains the nitride mode locking Echo Wall micro laser of one direction transmitting.
The utility model has the advantages that compared with prior art, the invention has the following advantages that
In order to obtain the low-loss nitride mode locking WGM laser of high-gain of unidirectional transmitting, the present invention passes through items
The silicon column that the wet process silicon etching technology of the same sex can obtain well-formed supports notched asymmetric annular membrane microcavity, it is micro-
The level cross-sectionn of chamber is unique asymmetrical shape: annulus+" cone angle "+" notch "." cone angle " be outer circle tangent line and one
The acute angle portion that camber line is crossed to form in round outside.The structure is with following three advantages: first, " hanging " makes microcavity or more
Surface is wrapped up by the air of low-refraction, the microcavity interface of light low-refraction air around high-index semiconductor and it
The total internal reflection at place is conducted in the form of WGM, and the optical mode of vertical direction is also limited strongly, this WGM conduction and light
It learns limitation and significantly reduces optical scattering and transmission bring optical loss, can produce the sufficiently large light for maintaining lasing effect
Gain.Second, " annulus+" cone angle " microcavity,.Cirque structure has high optical gain and minimum optical loss, energy
Enough laser resonances for forming closure, and light is unsatisfactory for total reflection condition in higher " cone angle " region of curvature, can will be in WGM microcavity
Laser uni-directionally export, be conducive to integrated with other opto-electronic devices.Third, on the ontology (I) of asymmetric annular membrane
It is provided with the notch for being connected to microcavity with outside, modification gold nanorods are as saturation semiconductor absorber in microcavity in notch
The phase of oscillating laser be modulated, and then realize the mode locking of laser, the quality factor and power of improving laser, mode-locked laser
Monochromaticjty and power be all much better than the laser of non-mode locking.
Currently, the Echo Wall laser about one direction transmitting has had been reported that, but one direction is emitted and mode locking
The Echo Wall micro laser that function integrates is not reported.So the most important innovation of the design is nitride for the first time
The one direction transmitting of Echo Wall laser and the function of mode locking are combined together, and annulus+asymmetric annular membrane of cone angle+notch is outstanding
Empty device structure design realizes the nitride mode locking Echo Wall laser of one direction transmitting for the first time, improves the monochrome of Echo Wall laser
Property and output power, are more conducive to industrial application.
Detailed description of the invention
Fig. 1 annulus+cone angle+notch asymmetric annular membrane microcavity horizontal cross-section schematic diagram.
The side view of the nitride mode locking Echo Wall micro laser of Fig. 2 one direction transmitting
The top view of the nitride mode locking Echo Wall micro laser of Fig. 3 one direction transmitting.
The process flow chart of the nitride mode locking Echo Wall micro laser of Fig. 4 one direction transmitting.
Have in figure: nitride layer 1, silicon substrate layer 2, metal nickel layer 3, photoresist layer 4.
Specific embodiment
The present invention is described in further details with specific embodiment with reference to the accompanying drawings of the specification.
To prepare the nitride mode locking Echo Wall micro laser of one direction transmitting, outer annular diameter is 10 microns, annular diameters 6
For micron, preparation process is as follows:
Step 1: by the commercial silicon substrate gallium nitride wafer of purchase, it is successively ultrasonic through acetone, dehydrated alcohol and deionized water
After cleaning, with being dried with nitrogen, using sol evenning machine in front wafer surface with 4000 revs/min of revolving speed spin coating photoresist AZ5214, rotation
Applying the time is 60 seconds (photoresist is with a thickness of 1.5 microns)；The silicon based gallium nitride chip architecture used herein only has 2 He of silicon substrate layer
Gallium nitride layer 1 defines non-symmetric thin-film microcavity graphic structure using optical lithography techniques on the photoresist layer 4 in spin coating,
Litho machine model MA6.
Step 2: depositing 300 nanometers of hard using electron beam evaporation plating system (ei-5z model) to the sample of photoetching and covering
Then film layer 3 removes remaining photoresist using acetone, obtains the hard mask layer 3 of metallic nickel.
Step 3: the first step is defined the band asymmetric annular membrane microcavity figure of notch using reactive ion etching technology
Shape is transferred on the gallium nitride layer 1 of chip, specific practice are as follows: is used reactive ion etching machine, 2 microns of etching depth, is made silicon layer 2
It is exposed, CF2Flow is 10sccm, top electrode power (forward) 300w, lower electrode power (RF) 100w；Then it utilizes
Dust technology removes remaining metallic nickel.
Step 4: the etching liquid using the mixed liquor of hydrofluoric acid and the 1:9 of nitric acid as silicon, carries out isotropic quarter to silicon
It loses, etch period 70 seconds under room temperature, 3 microns of etching depth, keeps notched asymmetric annular membrane microcavity hanging.
Step 5: notched asymmetric annular membrane microcavity is immersed to the solution (solution concentration 10%) of gold nanorods,
Gold nanorods modify the nitride mode locking Echo Wall that one direction transmitting is finally completed in indentation, there as semiconductor saturated absorbing body
The preparation of micro laser.Under the conditions of optical pumping, gold nanorods to as semiconductor saturated absorbing body to the laser in microcavity into
Row modulation is realized to Echo Wall laser mode locking in microcavity, finally obtains the gallium nitride mode locking Echo Wall laser of one direction transmitting.
It should be understood that above-described embodiment is merely to illustrate the specific embodiment of technical solution of the present invention, rather than limitation is originally
The range of invention.After the present invention has been read, those skilled in the art to the modifications of various equivalent forms of the invention and replace
It changes and falls within protection scope defined by the claim of this application.
Claims (3)
1. a kind of nitride mode locking Echo Wall micro laser of one direction transmitting, which is characterized in that the laser is nitrogenized with silicon substrate
Object chip is carrier, is supported including silicon base, the silicon column being arranged in the silicon base, by the silicon column hanging asymmetric
Annular membrane micro-cavity structure, the asymmetric annular membrane micro-cavity structure are made of nitride, including annular ontology (I), are set
It sets the microcavity inside the ontology (I), the protrusion cone angle (II) in the outer circumferential ontology (I) is set, set on the ontology (I)
It is equipped with the notch (III) for being connected to microcavity with outside, the prominent cone angle (II) is by ontology (I) tangent to periphery, ontology (I) circumference
The camber line of upper camber line and ontology (I) outside surrounds, and the angle that the camber line of the ontology (I) outside intersects with ontology (I) circumference is acute angle,
Metal nano-rod, the gold nanorods modified in the notch (III), under the conditions of optical pumping are modified in the notch (III)
Mode modulation is carried out to the laser in microcavity as semiconductor saturated absorbing body, realizes the nitride mode locking echo of one direction transmitting
Wall laser.
2. the nitride mode locking Echo Wall micro laser of one direction transmitting according to claim 1, which is characterized in that described
Silicon base and silicon column are to etch to obtain in the silicon substrate layer (2) of silica-based nitride chip.
3. a kind of method for the nitride mode locking Echo Wall micro laser for preparing one direction transmitting as claimed in claim 1 or 2, special
Sign is, method includes the following steps:
Step 1: the spin coating photoresist (4) on nitride layer (1), then uses optical lithography techniques in the photoresist layer of spin coating
The upper figure for defining asymmetric annular membrane micro-cavity structure described in claim 1；
Step 2: using electron beam evaporation plating system on nitride layer (1) deposited metal nickel, then remove remaining photoresist,
The metallic nickel left is as hard mask layer (3)；
Step 3: be based on the hard mask layer (3), using the downward etch nitride layer of reactive ion etching technology (1) until
The upper surface of silicon substrate layer (2), thus by the nitridation of the pattern transfer defined in the second step to silica-based nitride chip
In nitride layer (1), the asymmetric annular membrane micro-cavity structure with notch (III) is obtained, then utilizes dust technology or nickel etching liquid
Removal remains in the metallic nickel on nitride layer (1) surface；
Step 4: making formation in silicon substrate layer (2) support asymmetric annular membrane micro- using isotropism wet process silicon lithography
The silicon column of cavity configuration and silicon base positioned at bottom surface, keep asymmetric annular membrane micro-cavity structure hanging；
Step 5: asymmetric annular membrane micro-cavity structure is immersed in the solution of metal nano-rod, modify metal nano-rod
It is inner to notch (III), obtain the nitride mode locking Echo Wall micro laser of one direction transmitting.
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| CN109659810B (en) * | 2018-12-24 | 2021-10-08 | 香港中文大学（深圳） | Method for reducing threshold of microcavity semiconductor laser |
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| CN102763293A (en) * | 2009-12-01 | 2012-10-31 | 住友电气工业株式会社 | Group iii nitride semiconductor laser element, and method for manufacturing group iii nitride semiconductor laser element |
| CN104009393A (en) * | 2014-04-30 | 2014-08-27 | 南京邮电大学 | Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof |
| US20140353712A1 (en) * | 2010-07-15 | 2014-12-04 | The Regents Of The University Of California | Nanopillar optical resonator |
| CN104218443A (en) * | 2014-08-20 | 2014-12-17 | 鲍小志 | Two-dimensional stratified material based practical saturable absorber and production method thereof |
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| CN102763293A (en) * | 2009-12-01 | 2012-10-31 | 住友电气工业株式会社 | Group iii nitride semiconductor laser element, and method for manufacturing group iii nitride semiconductor laser element |
| US20140353712A1 (en) * | 2010-07-15 | 2014-12-04 | The Regents Of The University Of California | Nanopillar optical resonator |
| CN104009393A (en) * | 2014-04-30 | 2014-08-27 | 南京邮电大学 | Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof |
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