CN103094415A - Silicon photocell nano lubricating P-N node structure and manufacture method of silicon photocell nano lubricating P-N node structure - Google Patents
Silicon photocell nano lubricating P-N node structure and manufacture method of silicon photocell nano lubricating P-N node structure Download PDFInfo
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Abstract
The invention discloses a silicon photocell nano lubricating P-N node structure and a manufacture method of the silicon photocell nano lubricating P-N node structure. The method comprises the following steps. A cesium chloride film is grown on the surface of a silicon wafer, the silicon wafer with the cesium chloride film on the surface is put in a ventilation cavity body with certain humidity for development, and a cesium chloride nano round island structure is formed on the surface of the silicon wafer. The silicon wafer with a cesium chloride nano round island structure on the surface undergoes plasma etching, and the obtained cesium chloride nano round island structure is transformed to be a silicon nano cylinder shaped structure. A heat spreading method is utilized to perform phosphorus oxychloride spreading on the silicon nano cylinder shaped structure and control spreading depth so as to form the P-N node structure of a body direction or the P-N node structure of a radial direction. The silicon photocell nano lubricating P-N node structure and the manufacture method of the silicon photocell nano lubricating P-N node structure is low in cost and strong in technology adapting performance and capable of growing and finishing on different silicon surfaces. The silicon photocell nano lubricating P-N node structure is capable of effectively reducing reflection of incident light from different angles, absorption of the incident light is increased, and photoelectric conversion efficiency of a solar battery is improved.
Description
Technical field
The invention belongs to micrometer/nanometer semiconductor microactuator process technology, especially a kind of silicon photocell nanometer texturing P-N junction structure and preparation method thereof.
Background technology
Silicon is a kind of purposes semi-conducting material the most widely, in many fields such as solar cells, huge commercial Application is arranged.The silion cell characteristics such as sufficient, cheap and manufacture craft is ripe with its material are as the main body of existing commercial battery.
Conventional monocrystalline silicon battery surface adopts pyramid structure as texturing, and makes the P-N junction structure in the mode of phosphorus oxychloride thermal diffusion.Fig. 1 shows the schematic diagram of pyramid structure and pyramid texturing P-N knot, and wherein (a) is pyramid structure, is (b) pyramid texturing P-N knot.The preparation of pyramid structure is adopted be alkaline solution is that corrosion rate changes with the different crystallization direction of monocrystalline to the anisotropic etch of silicon chip.In practical application, mostly adopt concentration to be about 1% dilute solution of sodium hydroxide and prepare pyramid structure, corrosion temperature is 70～85 ℃, more than the large decades of times of corrosion rate of (100) face comparable (111) face of monocrystalline silicon, therefore finally to cause growing surface from the teeth outwards be pyramid structure for four sides side's cone of (111) face to the anisotropic etch of (100) silicon chip, it differs in size, generally at 2～4 microns.The pyramid texturing is spread by liquid phosphorus oxychloride, at pyramid surface formation P-N junction structure.This texturing P-N junction structure, technical maturity and easy to operate, its weak point is can only will be reduced to 10% to the reflectivity of visible light, when particularly being applied to polysilicon, due to grain-oriented randomness, can not effectively reduce light loss, the anti-reflection DeGrain need to reach the needed anti-reflection effect of photocell at silicon nitride or the silicon dioxide layer of surface coverage appointed thickness.
Nanometer texturing structure can produce Multiple Scattering to incident light, and anti-reflection effect is preferably arranged, and commonly used have manufacture methods such as chemical vapour deposition technique, metal catalytic chemical corrosion, photoetching technique.Chemical vapour deposition (CVD) is that the substrate that will deposit in advance catalyst with metal nanoparticles is placed in quartz reactor, utilizes carrier gas (as hydrogen, nitrogen) to pass into gaseous state silicon source material grow silicon nanowires under uniform temperature and vacuum degree.The metal catalytic chemical corrosion is to use the mode of chemical plating to prepare certain thickness silver on silicon chip, then adopts hydrofluoric acid-silver hitrate cautery corrosion to obtain silicon nanowire array.Above method cost is lower, but all can introduce metal simple-substance, if can not well remove, will become the complex centre of solar cell, reduces photoelectric conversion efficiency.The nanowire diameter that these methods are made between several to dozens of nanometers, can well reduce reflection greatly, but by after the phosphorus oxychloride thermal diffusion, can only organizator to the P-N junction structure.
for diameter formation P-N junction structure radially after the hundreds of nanometer just can spread by phosphorus oxychloride to the nano-array in several micrometer ranges, photoetching technique can make the larger nano-array of diameter, photoetching technique is to make the photoresist mask with nano graph at silicon chip surface, obtain nano-array by physical etchings, this method can obtain more radially P-N junction structure, but the restriction due to photoetching technique, large tracts of land, diameter is difficult to make less than the array of hundreds of nanometer, so can not organizator to the P-N junction structure, and this method cost is higher, be not suitable for batch production.
The method of making P-N knot commonly used also comprises ion implantation and epitaxial growth method except the method for thermal diffusion.Ion implantation is that impurity element is become the doping ion through after ionization, by electric field, ion is accelerated, utilize magnetic field that its direction of motion is changed, so just can control ion and enter semiconductor inside with certain energy, reach the purpose of doping, the annealed P-N knot that just formed.This method is the concentration of controlled doping accurately, but cost is higher, is not suitable for batch production, and the pattern of the bombardment meeting deface of high energy ion, more is not suitable for making the textured P-N junction structure of nanometer.Epitaxial growth method is to utilize the principle of the two-dimensional structure similitude nucleation on grain boundary, on a single-chip, along its original crystal axis direction regrowth one deck lattice perfection and can have the technique of the single crystalline layer of different impurity concentrations and thickness.This technique can only form axial P-N junction structure, and requires the crystal face of silicon chip and epitaxial loayer to mate well, otherwise the interface contact is good not, easily comes off in temperature changing process.
The nanometer texturing P-N junction structure that the present invention makes can effectively reduce reflection, can use as antireflective film independently; Cesium chloride self assembly and plasma etching technology can be made the nano-array of diameter 50-1500 nanometer, by can make as required after the phosphorus oxychloride thermal diffusion body to or P-N junction structure radially; In the corrosion of making the textured process of nanometer and not needing to introduce metal simple-substance, do not need high temperature and acid solution, and the method for nanometer texturing and thermal diffusion is made, and the process of P-N knot is simple, cost is lower, be fit to large tracts of land production.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of silicon photocell nanometer texturing P-N junction structure and preparation method thereof, the pyramid structure reflectivity is higher to solve, body to or radially nano-pillar P-N junction structure can not make, make the nano-array process with method of the same race and introduce metal impurities and affect the problems such as electricity conversion, cost are higher, reach effective reduction reflectivity, as required make body to or radially the P-N junction structure, reduce costs, produce in batches, improve the purpose of electricity conversion.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of making silicon photocell nanometer texturing P-N junction structure, comprising: at silicon chip surface growth one deck cesium chloride film; The ventilation cavity that the silicon chip that the surface is had a cesium chloride film is put into certain humidity develops, and forms cesium chloride nanometer circle island structure at silicon chip surface; The silicon chip that effects on surface has cesium chloride nanometer circle island structure carries out plasma etching, and the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure; And adopt the method for thermal diffusion to carry out the phosphorus oxychloride diffusion to silicon nanometer column structure, and control diffusion depth, organizator to or P-N junction structure radially.
In such scheme, described at silicon chip surface growth one deck cesium chloride film, be to adopt thermal evaporation method at silicon chip surface evaporation one deck cesium chloride film, the thickness of silicon chip is the 0.2-0.5 millimeter, P type, resistivity are 1-3 Ω cm, and the surface is for burnishing surface or hair side or structural plane is arranged; The thickness of cesium chloride film is the 200-7000 dust.
In such scheme, the ventilation cavity that the described silicon chip that the surface is had a cesium chloride film is put into certain humidity develops, form cesium chloride nanometer circle island structure at silicon chip surface, comprise: the silicon chip that the surface is had the cesium chloride film is put into the ventilation cavity that humidity is 10%-70%, development cesium chloride film, cesium chloride is reunited under the effect of humidity gas, forms the cesium chloride nanometer circle island structure of similar water droplet one by one at silicon chip surface.The diameter of described cesium chloride nanometer circle island structure is the 50-1500 nanometer.
In such scheme, the silicon chip that described effects on surface has cesium chloride nanometer circle island structure carries out plasma etching, the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure, comprise: the surface is had the cesium chloride nanometer justify the etching cavity that the silicon chip of island structure is put into plasma etching machine, utilize SF
6And C
4F
8Be etching gas, He is refrigerating gas, and the etching technics parameter is pressure 4 handkerchiefs, SF
6: C
4F
8: He=60: 150: 10sccm, 400 watts of exciting powers, substrate bias power is 30 watts, etch period 1-20 minute; Water will be put into after silicon chip extracting, time 1-10 minute, make the cesium chloride nanometer circle island structure dissolving on silicon chip, obtaining diameter at silicon chip surface is the 50-1500 nanometer, it is highly the silicon chip of the Texture of 0.2-10 micron, thereby cesium chloride nanometer circle island structure is translated into silicon nanometer column structure, form the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.
In such scheme, the method of described employing thermal diffusion is carried out the phosphorus oxychloride diffusion to silicon nanometer column structure, and control diffusion depth, organizator to or P-N junction structure radially, comprising: silicon nanometer column structure is put into 850 ℃ of diffusion furnaces, pass into the nitrogen 100sccm that carries liquid phosphorus oxychloride in diffusion furnace, spread 8-13 minute, form the P-N knot, square resistance is 30-90 Ω/, and junction depth is about the 200-400 nanometer; Like this, radius changes into N-type fully less than the nano-array of junction depth, and the P-N knot is that organizator is to the P-N junction structure at the body silicon face; It is still to keep the P type near the part in axle center that radius changes into N-type greater than the nano-pillar body structure surface of junction depth, i.e. P-N junction structure radially.
For achieving the above object, the present invention also provides a kind of silicon photocell nanometer texturing P-N junction structure, and this silicon photocell nanometer texturing P-N junction structure is the cylindric or cone shape nanometer P-N junction structure that forms on silicon chip.
In such scheme, this silicon photocell nanometer texturing P-N junction structure, its prototype structure manufacturing selects the cesium chloride self-assembling technique to complete, and the cesium chloride after completing is present in silicon chip surface with cesium chloride nanometer circle island structure form, and the diameter of this cesium chloride nanometer circle island structure is the 50-1500 nanometer.
In such scheme, justify island structure as the plasma etching mask with this cesium chloride nanometer, by plasma etching technology, cesium chloride nanometer circle island structure is transformed on silicon materials, form the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.
In such scheme, the height of this silicon nanometer column structure and pattern be by the power of plasma etching, gas flow, and pressure and time are controlled, and form silicon nanometer cylinder or conical structure, are highly the 0.2-10 micron; The nanometer texturing structure of this silicon nanometer column structure spreads as the phosphorus source with liquid phosphorus oxychloride, regulates diffusion depth by controlling diffusion temperature, impurity concentration, diffusion time, organizator to or nanometer texturing P-N junction structure radially.
(3) beneficial effect
Can find out from technique scheme, the present invention has following beneficial effect:
1, this silicon photocell nanometer texturing P-N junction structure provided by the invention and preparation method thereof, the diameter of this nanostructure and height support size are extensive, and can be according to using needs, control the diffusion technology organizator to P-N junction structure radially.
2, this silicon photocell nanometer texturing P-N junction structure provided by the invention and preparation method thereof, utilize cesium chloride nanometer island self-assembling technique to complete original nanostructure, have low cost and stronger Technological adaptability energy, can be on the Different Silicon surface growth and completing, this nanometer texturing P-N junction structure can reduce the incident reflection of light from all angles effectively, increase can be used as antireflective film independently to the incident Optical Absorption, improves the photoelectric conversion efficiency of solar cell.
3, this silicon photocell nanometer texturing P-N junction structure provided by the invention and preparation method thereof, do not need to introduce the corrosion of metal simple-substance and acid solution in the textured process of nanometer, the cesium chloride material is very easily water-soluble, is convenient to remove, and can not form complex defect at remained on surface.
4, this silicon photocell nanometer texturing P-N junction structure provided by the invention and preparation method thereof adopts phosphorus oxychloride thermal diffusion mode to make the P-N junction structure, and technique is simple, the low suitable large tracts of land production of cost.
Description of drawings
Fig. 1 is the schematic diagram of pyramid structure and pyramid texturing P-N knot, and wherein (a) is pyramid structure, is (b) pyramid texturing P-N knot.
Fig. 2 is the method flow diagram according to the making silicon photocell nanometer texturing P-N junction structure of the embodiment of the present invention.
Fig. 3 to Fig. 7 is the process chart according to the making silicon photocell nanometer texturing P-N junction structure of the embodiment of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of silicon photocell nanometer texturing P-N junction structure and manufacture method thereof, this nanometer texturing P-N junction structure is cylinder or cone-shaped structure, diameter range 50-1500 nanometer, it is highly the 0.2-10 micron, by can form radially after thermal diffusion process or body to nanometer texturing P-N junction structure, manufacture method adopts the techniques such as plated film, plasma etching technology and thermal diffusion of cesium chloride self assembly, microfabrication to complete.The method prototype structure adopts self-assembling technique to complete, can realize cesium chloride nanometer island structure on difform silicon face, cesium chloride island structure size realizes by the Comprehensive Control of cesium chloride film thickness and development humidity, undersized nanometer island structure needs the little and development humidity of cesium chloride thickness to hang down to obtain, and the large scale island structure needs that cesium chloride thickness is large and development humidity is high obtains.With plasma etching technology, the cesium chloride nanometer island structure that obtains is translated into silicon nanometer column structure.Spread by phosphorus oxychloride, and control diffusion depth, organizator to or P-N junction structure radially, realize the manufacturing of silicon photocell nanometer texturing P-N junction structure.
As shown in Figure 2, Fig. 2 is that the method comprises the following steps according to the method flow diagram of the making silicon photocell nanometer texturing P-N junction structure of the embodiment of the present invention:
Step 10: at silicon chip surface growth one deck cesium chloride film;
Step 20: the ventilation cavity that the silicon chip that the surface is had a cesium chloride film is put into certain humidity develops, and forms cesium chloride nanometer circle island structure at silicon chip surface;
Step 30: the silicon chip that effects on surface has cesium chloride nanometer circle island structure carries out plasma etching, and the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure; And
Step 40: adopt the method for thermal diffusion to carry out the phosphorus oxychloride diffusion to silicon nanometer column structure, and control diffusion depth, organizator to or P-N junction structure radially.
Wherein, at silicon chip surface growth one deck cesium chloride film, be to adopt thermal evaporation method at silicon chip surface evaporation one deck cesium chloride film described in step 10, the thickness of silicon chip is the 0.2-0.5 millimeter, P type, resistivity are 1-3 Ω cm, and the surface is for burnishing surface or hair side or structural plane is arranged; The thickness of cesium chloride film is the 200-7000 dust.
The ventilation cavity that the silicon chip that described in step 20, the surface is had a cesium chloride film is put into certain humidity develops, form cesium chloride nanometer circle island structure at silicon chip surface, comprise: the silicon chip that the surface is had the cesium chloride film is put into the ventilation cavity that humidity is 10%-70%, development cesium chloride film, cesium chloride is reunited under the effect of humidity gas, forms the cesium chloride nanometer circle island structure of similar water droplet one by one at silicon chip surface.The diameter of described cesium chloride nanometer circle island structure is the 50-1500 nanometer.
The silicon chip that effects on surface described in step 30 has cesium chloride nanometer circle island structure carries out plasma etching, the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure, comprise: the surface is had the cesium chloride nanometer justify the etching cavity that the silicon chip of island structure is put into plasma etching machine, utilize SF
6And C
4F
8Be etching gas, He is refrigerating gas, and the etching technics parameter is pressure 4 handkerchiefs, SF
6: C
4F
8: He=60: 150: 10sccm, 400 watts of exciting powers, substrate bias power is 30 watts, etch period 1-20 minute; Water will be put into after silicon chip extracting, time 1-10 minute, make the cesium chloride nanometer circle island structure dissolving on silicon chip, obtaining diameter at silicon chip surface is the 50-1500 nanometer, it is highly the silicon chip of the Texture of 0.2-10 micron, thereby cesium chloride nanometer circle island structure is translated into silicon nanometer column structure, form the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.
Adopt the method for thermal diffusion to carry out the phosphorus oxychloride diffusion to silicon nanometer column structure described in step 40, and control diffusion depth, organizator to or P-N junction structure radially, comprise: silicon nanometer column structure is put into 850 ℃ of diffusion furnaces, pass into the nitrogen 100sccm that carries liquid phosphorus oxychloride in diffusion furnace, spread 8-13 minute, form the P-N knot, square resistance is 30-90 Ω/, and junction depth is about the 200-400 nanometer; Like this, radius changes into N-type fully less than the nano-array of junction depth, and the P-N knot is that organizator is to the P-N junction structure at the body silicon face; It is still to keep the P type near the part in axle center that radius changes into N-type greater than the nano-pillar body structure surface of junction depth, i.e. P-N junction structure radially.
Fig. 3 to Fig. 7 shows the process chart according to the making silicon photocell nanometer texturing P-N junction structure of the embodiment of the present invention.The present embodiment has adopted self assembly cesium chloride Nano Islands Lithography and micro-machined plasma etching technology to complete silicon face texturing, and take this textured silicon chip as substrate, by the phosphorus oxychloride thermal diffusion process make body to or radially silicon nanometer texturing P-N junction structure.
The silicon chip that silicon materials select semi-conductor industry to use, thickness 0.2-0.5 millimeter, P type, resistivity are 1-3 Ω cm, the surface is for burnishing surface or hair side or structural plane is arranged.The manufacture method of this nanometer texturing P-N junction structure is to put into the vacuum coating cavity after above-mentioned Wafer Cleaning is clean, evaporation cesium chloride film, and thickness 200-7000 dust, as shown in Figure 3.
After the cesium chloride film has plated, pass into the gas of certain humidity in the cavity, relative humidity is 10%-70%, development cesium chloride film, cesium chloride is reunited under the effect of humidity gas, and the nanometer cesium chloride peninsular structure that forms similar water droplet one by one at silicon chip surface as shown in Figure 4.
Because cesium chloride nanometer island structure is to obtain by self assembly, the cesium chloride island diameter that grows is not identical, has wider diameter size distribution, and diameter dimension roughly meets Gaussian Profile.Take the cesium chloride island structure of reuniting as mask, to utilize the plasma etching technology etch silicon, thereby cesium chloride structure is transferred on silicon face, etching transfer organization result is as shown in Figure 5.Plasma etch process is by F ion and pasc reaction and silicon etching is fallen; can not react with cesium chloride simultaneously; silicon under cesium chloride structure is protected, and the part silicon that does not have cesium chloride structure to cover will be etched away certain thickness, realize that the figure of cesium chloride structure shifts.Plasma etching utilizes SF
6And C
4F
8Be etching gas, He is refrigerating gas.Operating pressure 4Pa, 400 watts of exciting powers, substrate bias power is 30 watts, etch period 1-20 minute, the etching result was as schematically shown in Figure 5.
After the silicon face etching was completed, sample was put into water 2 minutes, cesium chloride can be dissolved, and obtained the nanostructured surface silicon materials, and its structure as shown in Figure 6, is the 50-1500 nanometer thereby produce diameter, is highly the nano-pillar texturing of 0.2-10 micron.
At last, method with thermal diffusion is made the P-N junction structure, liquid phosphorus oxychloride is carried by nitrogen and is entered in the diffusion furnace furnace chamber, and phosphorus atoms because thermal diffusion is moved into matrix, is regulated surface concentration and diffusion depth by controlling diffusion temperature, impurity concentration, diffusion time when high temperature.Diffusion temperature is higher, and phosphorus oxychloride concentration is larger, and diffusion time is longer, and prepared P-N knot is darker, and square resistance is less.Otherwise temperature is lower, and phosphorus oxychloride concentration is less, and diffusion time is shorter, and prepared P-N knot is more shallow, and square resistance is larger, thus for the nano column array of determining diameter, can by control diffusion technology obtain body to or radially P-N junction structure.In 850 degree diffusion furnaces, pass into the nitrogen 100sccm that carries phosphorus oxychloride, spread 8-13 minute, form the P-N knot, square resistance is 30-90 Ω/, junction depth is about the 200-400 nanometer.Like this, radius changes into N-type fully less than the nano-array of junction depth, and the P-N knot is that organizator is to the P-N junction structure at the body silicon face.It is still to keep the P type near the part in axle center that radius changes into N-type greater than the nano-pillar body structure surface of junction depth, i.e. P-N junction structure radially as shown in Figure 7, thereby has been completed the manufacturing of photocell nanometer texturing P-N junction structure.
Adopt the method for making silicon photocell nanometer texturing P-N junction structure provided by the invention, the silicon photocell nanometer texturing P-N junction structure of producing is the cylindric or cone shape nanometer P-N junction structure that forms on silicon chip.This texturing refers to nanometer cylinder or conical structure, the position is randomly dispersed within silicon chip surface, diameter is Gaussian Profile, highly identical, can namely all be converted into N-type to the P-N junction structure by organizator by these nano-arrays of diffusion technology, also can form P-N junction structure radially and namely change into N-type and still keep the P type near the part in axle center in the surface.
Wherein, this silicon photocell nanometer texturing P-N junction structure, its prototype structure manufacturing selects the cesium chloride self-assembling technique to complete, and the cesium chloride after completing is present in silicon chip surface with cesium chloride nanometer circle island structure form, and the diameter of this cesium chloride nanometer circle island structure is the 50-1500 nanometer.,, by plasma etching technology cesium chloride nanometer circle island structure is transformed on silicon materials as the plasma etching mask with this cesium chloride nanometer circle island structure, forms the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.The height of this silicon nanometer column structure and pattern be by the power of plasma etching, gas flow, and pressure and time are controlled, and form silicon nanometer cylinder or conical structure, are highly the 0.2-10 micron; The nanometer texturing structure of this silicon nanometer column structure spreads as the phosphorus source with liquid phosphorus oxychloride, regulates diffusion depth by controlling diffusion temperature, impurity concentration, diffusion time, organizator to or nanometer texturing P-N junction structure radially.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a method of making silicon photocell nanometer texturing P-N junction structure, is characterized in that, comprising:
At silicon chip surface growth one deck cesium chloride film;
The ventilation cavity that the silicon chip that the surface is had a cesium chloride film is put into certain humidity develops, and forms cesium chloride nanometer circle island structure at silicon chip surface;
The silicon chip that effects on surface has cesium chloride nanometer circle island structure carries out plasma etching, and the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure; And
Adopt the method for thermal diffusion to carry out the phosphorus oxychloride diffusion to silicon nanometer column structure, and control diffusion depth, organizator to or P-N junction structure radially.
2. the method for making silicon photocell nanometer texturing P-N junction structure according to claim 1, it is characterized in that, described at silicon chip surface growth one deck cesium chloride film, to adopt thermal evaporation method at silicon chip surface evaporation one deck cesium chloride film, the thickness of silicon chip is the 0.2-0.5 millimeter, P type, resistivity are 1-3 Ω cm, and the surface is for burnishing surface or hair side or structural plane is arranged; The thickness of cesium chloride film is the 200-7000 dust.
3. the method for making silicon photocell nanometer texturing P-N junction structure according to claim 1, it is characterized in that, the ventilation cavity that the described silicon chip that the surface is had a cesium chloride film is put into certain humidity develops, and forms cesium chloride nanometer circle island structure at silicon chip surface, comprising:
The silicon chip that the surface is had the cesium chloride film is put into the ventilation cavity that humidity is 10%-70%, development cesium chloride film, and cesium chloride is reunited under the effect of humidity gas, forms the cesium chloride nanometer circle island structure of similar water droplet one by one at silicon chip surface.
4. the method for making silicon photocell nanometer texturing P-N junction structure according to claim 3, is characterized in that, the diameter of described cesium chloride nanometer circle island structure is the 50-1500 nanometer.
5. the method for making silicon photocell nanometer texturing P-N junction structure according to claim 1, it is characterized in that, the silicon chip that described effects on surface has cesium chloride nanometer circle island structure carries out plasma etching, and the cesium chloride nanometer circle island structure that obtains is translated into silicon nanometer column structure, comprising:
The surface is had the cesium chloride nanometer justify the etching cavity that the silicon chip of island structure is put into plasma etching machine, utilize SF
6And C
4F
8Be etching gas, He is refrigerating gas, and the etching technics parameter is pressure 4 handkerchiefs, SF
6: C
4F
8: He=60: 150: 10sccm, 400 watts of exciting powers, substrate bias power is 30 watts, etch period 1-20 minute;
Water will be put into after silicon chip extracting, time 1-10 minute, make the cesium chloride nanometer circle island structure dissolving on silicon chip, obtaining diameter at silicon chip surface is the 50-1500 nanometer, it is highly the silicon chip of the Texture of 0.2-10 micron, thereby cesium chloride nanometer circle island structure is translated into silicon nanometer column structure, form the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.
6. the method for making silicon photocell nanometer texturing P-N junction structure according to claim 1, it is characterized in that, the method for described employing thermal diffusion is carried out the phosphorus oxychloride diffusion to silicon nanometer column structure, and controls diffusion depth, organizator to or P-N junction structure radially, comprising:
Silicon nanometer column structure is put into 850 ℃ of diffusion furnaces, pass into the nitrogen 100sccm that carries liquid phosphorus oxychloride in diffusion furnace, spread 8-13 minute, form the P-N knot, square resistance is 30-90 Ω/, and junction depth is about the 200-400 nanometer; Like this, radius changes into N-type fully less than the nano-array of junction depth, and the P-N knot is that organizator is to the P-N junction structure at the body silicon face; It is still to keep the P type near the part in axle center that radius changes into N-type greater than the nano-pillar body structure surface of junction depth, i.e. P-N junction structure radially.
7. one kind is adopted the silicon photocell nanometer texturing P-N junction structure that in claim 1 to 6, the described method of any one prepares, and this silicon photocell nanometer texturing P-N junction structure is the cylindric or cone shape nanometer P-N junction structure that forms on silicon chip.
8. silicon photocell nanometer texturing P-N junction structure according to claim 7, it is characterized in that, this silicon photocell nanometer texturing P-N junction structure, its prototype structure manufacturing selects the cesium chloride self-assembling technique to complete, cesium chloride after completing is present in silicon chip surface with cesium chloride nanometer circle island structure form, and the diameter of this cesium chloride nanometer circle island structure is the 50-1500 nanometer.
9. silicon photocell nanometer texturing P-N junction structure according to claim 8, it is characterized in that, justify island structure as the plasma etching mask with this cesium chloride nanometer, pass through plasma etching technology, cesium chloride nanometer circle island structure is transformed on silicon materials, forms the silicon nanometer column structure with cesium chloride nanometer circle island structure identical patterns.
10. silicon photocell nanometer texturing P-N junction structure according to claim 8, it is characterized in that, the height of this silicon nanometer column structure and pattern are by the power of plasma etching, gas flow, pressure and time are controlled, forming silicon nanometer cylinder or conical structure, is highly the 0.2-10 micron; The nanometer texturing structure of this silicon nanometer column structure spreads as the phosphorus source with liquid phosphorus oxychloride, regulates diffusion depth by controlling diffusion temperature, impurity concentration, diffusion time, organizator to or nanometer texturing P-N junction structure radially.
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| CN104393067A (en) * | 2014-10-23 | 2015-03-04 | 天威新能源控股有限公司 | Nanostructured solar cell and manufacturing method thereof |
| CN104465821A (en) * | 2014-12-25 | 2015-03-25 | 胡明建 | Designing method of conical isometric matrix arrangement solar panel |
| CN105006495A (en) * | 2015-06-19 | 2015-10-28 | 中国科学院高能物理研究所 | Method for producing selective nanometer textured silicon photocell |
| CN105932372A (en) * | 2016-06-08 | 2016-09-07 | 苏州大学 | Modification method of photoelectrochemical response and photoelectrochemical cell |
| CN105932372B (en) * | 2016-06-08 | 2018-05-29 | 苏州大学 | Modification method of photoelectrochemical response and photoelectrochemical cell |
| CN106206779A (en) * | 2016-08-01 | 2016-12-07 | 中国科学院高能物理研究所 | Heterojunction solar battery with silicon nano column array as substrate and preparation method thereof |
| CN113299551A (en) * | 2021-04-27 | 2021-08-24 | 南昌大学 | Method for regulating and controlling semiconductor corrosion area |
| CN115350295A (en) * | 2022-08-19 | 2022-11-18 | 元旭半导体科技(无锡)有限公司 | Deep ultraviolet LED photocatalyst module and preparation method thereof |
| CN115350295B (en) * | 2022-08-19 | 2023-11-10 | 元旭半导体科技(无锡)有限公司 | Deep ultraviolet LED photocatalyst module and preparation method thereof |
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