CN106785273A - High-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides - Google Patents
High-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides Download PDFInfo
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- CN106785273A CN106785273A CN201611245006.0A CN201611245006A CN106785273A CN 106785273 A CN106785273 A CN 106785273A CN 201611245006 A CN201611245006 A CN 201611245006A CN 106785273 A CN106785273 A CN 106785273A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
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Abstract
The high-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides the invention discloses one kind; including top dielectric substrate and layer dielectric substrate; top dielectric substrate is provided with metal level; layer dielectric substrate is provided with lower metal layer, and intermediate metal layer is set between upper and lower layer dielectric substrate；The top dielectric substrate is provided with two sections of plated-through holes, and the corresponding position of layer dielectric substrate sets two ends plated-through hole；The upper lower metal layer is isosceles right triangle；One feeding microstrip line is attached thereto in upper metal level hypotenuse by the position of end points, and another feeding microstrip line is connected in corresponding position with lower metal layer；The hole and a hole for sector of rectangle are provided with the intermediate metal layer.The present invention has good frequency selectivity and Out-of-band rejection performance, while volume is greatly reduced, the characteristics of have low-loss, high power capacity concurrently.
Description
Technical field
The present invention relates to microwave technical field, particularly a kind of high-frequency based on 1/8th mould substrate integration wave-guides is selected
Selecting property bandpass filter.
Background technology
Since the concept of substrate integration wave-guide is proposed, with its low-loss, low cost, high power capacity and it has been easily integrated
Advantage receive the extensive concern of domestic and foreign scholars.In order to reduce substrate integrated waveguide bulk product, successively propose various small-sized
The improved structure of change, such as half module substrate integrated wave guide, folding self-die substrate integrated waveguide, a quarter mould substrate integration wave-guide and
/ 8th mould substrate integration wave-guides.
The wave filter based on substrate integrated waveguide technology of report realizes that the method for high-frequency selectivity is all logical both at home and abroad
The mode for crossing the whole resonator coupling of multiple substrate integration wave-guides produces transmission zero, and volume is all larger.
The content of the invention
It is an object of the invention to provide it is a kind of can realize high-frequency selectivity, low-loss, miniaturization based on eight points
One of mould substrate integration wave-guide bandpass filter.
The technical solution for realizing the object of the invention is：High-frequency of the one kind based on 1/8th mould substrate integration wave-guides
Selective bandpass filter, the wave filter is based on 1/8th mould substrate integration wave-guides, including top dielectric substrate and lower floor are situated between
Matter substrate, the upper surface of the top dielectric substrate is provided with metal level, and the lower surface of layer dielectric substrate is provided with lower gold
Category layer, intermediate metal layer is set between top dielectric substrate, layer dielectric substrate；The top dielectric substrate is provided with first row
Plated-through hole, second row plated-through hole, the corresponding position of layer dielectric substrate set the 3rd row's plated-through hole, the 4th row
Plated-through hole；
The upper metal level, lower metal layer are isosceles right triangle；First feeding microstrip line is arranged at upper strata Jie
Matter substrate, and connect with the hypotenuse of upper metal level；Article 2 feeding microstrip line is arranged at layer dielectric substrate, and and lower metal layer
Hypotenuse connect；The intermediate metal layer sets first hole of rectangle, and second hole of sector.
Further, the feeding microstrip line is connected with the hypotenuse of upper metal level near sector gap, and the feed is micro-
It is connected near sector gap with the hypotenuse of lower metal layer with line, and two feeding microstrip lines are right up and down on intermediate metal layer
Claim.
Further, upper metal level straight line where first row plated-through hole, second row plated-through hole is divided into
Upper and lower two parts, wherein what is be connected with the first feeding microstrip line is designated as part under upper metal level, are not connected with feeding microstrip line
It is designated as part on metal level；Lower metal layer straight line where the 3rd row's plated-through hole, the 4th row's plated-through hole is divided into
Lower two parts, wherein what is be connected with the second feeding microstrip line is designated as part under lower metal layer, the note not being connected with feeding microstrip line
It is part on lower metal layer；
Part, top dielectric substrate, intermediate metal layer and first row plated-through hole, second row gold under the upper metal level
Categoryization through hole constitutes 1/8th mould substrate integrated wave-guide cavity waves, is designated as a cavity；Part, top dielectric base on upper metal level
Piece, intermediate metal layer and first row plated-through hole, second row plated-through hole constitute 1/8th mould substrate integration wave-guide chambers
Body, is designated as No. two cavitys；Part, layer dielectric substrate, intermediate metal layer and the 3rd row's plated-through hole, the 4th under lower metal layer
Row's plated-through hole constitutes 1/8th mould substrate integrated wave-guide cavity waves, is designated as No. four cavitys；Part, lower floor are situated between on lower metal layer
Matter substrate, intermediate metal layer and the 3rd row's plated-through hole, the 4th row's plated-through hole constitute 1/8th integrated ripples of mould substrate
Guide cavity body, is designated as No. three cavitys.
Further, the second hole of the first hole of the intermediate metal layer setting rectangle, and sector, wherein second
Hole is 45 degree of sector, and the center of circle of the second hole is located at the acute angle of upper metal level；First hole is used for providing two
Coupling number between cavity and No. three cavitys, the second hole is used for providing the coupling between a cavity and No. four cavitys；Simultaneously
Weak coupling can be produced by the second hole 7 between first feeding microstrip line and the second feeding microstrip line.
Compared with prior art, its remarkable advantage is the present invention：(1) structure employed in the design is had benefited from, logical
Band both sides common property gives birth to four out-of-band transmission zero points, and frequency selectivity can be excellent；(2) 1/8th cavity body structures are used, effectively
Volume is reduced, is conducive to the miniaturization of wave filter；(3) structure employed in the design, the fourth-order band-pass of formation are had benefited from
The characteristics of wave filter has low-loss, high power capacity, high integration, is very suitable for for high integration, low-loss logical
Letter front end.
Brief description of the drawings
Fig. 1 is the dimensional structure diagram of present invention balance bandpass filter.
Fig. 2 is the top structure schematic diagram of present invention balance bandpass filter.
Fig. 3 is the top structure schematic diagram of present invention balance bandpass filter.
Fig. 4 is frequency response emulation and the test result figure of the embodiment of the present invention 1.
Specific embodiment
The present invention is described in further details with specific embodiment below in conjunction with the accompanying drawings.
With reference to Fig. 1~2, the high-frequency selectivity bandpass filtering based on 1/8th mould substrate integration wave-guides in the present invention
Device, including top dielectric substrate 2 and layer dielectric substrate 13, the upper surface of the top dielectric substrate 2 is provided with metal level
1, the lower surface of layer dielectric substrate 13 is provided with lower metal layer 11, is set between top dielectric substrate 2, layer dielectric substrate 13
Intermediate metal layer 8；The top dielectric substrate 2 is provided with first row plated-through hole 3, second row plated-through hole 5, and lower floor is situated between
The corresponding position of matter substrate 13 sets the 3rd row's plated-through hole 9, the 4th row's plated-through hole 10；
The upper lower metal layer 1,11 is isosceles right triangle；First feeding microstrip line 4 is arranged at top dielectric
Substrate 2, and connect with the hypotenuse of upper metal level 1；Article 2 feeding microstrip line 12 is arranged at layer dielectric substrate 13, and with lower gold
The hypotenuse for belonging to layer 11 connects；The intermediate metal layer 3 sets first hole 6 of rectangle, and second hole of sector
Gap 7.
Further, the feeding microstrip line 4 is connected with the hypotenuse of upper metal level 1 near sector gap, the feed
Microstrip line 12 is connected with the hypotenuse of lower metal layer 11 near sector gap, and two feeding microstrip lines are on intermediate metal layer 8
It is symmetrical above and below.
Further, upper metal level 1 is divided into upper and lower two parts by through hole 3,5 place straight lines, with the first feeding microstrip line phase
What is connected is designated as 1 time part of metal level, and what is be not connected with feeding microstrip line is designated as part on upper metal level 1；The quilt of lower metal layer 11
3rd row's plated-through hole 9, the place straight line of the 4th row's plated-through hole 10 are divided into upper and lower two parts, with the second feeding microstrip line phase
What is connected is designated as 1 time part of lower metal layer, and what is be not connected with feeding microstrip line is designated as part on lower metal layer 1；
1 time part of the upper metal level, top dielectric substrate 2, intermediate metal layer 8 and first row plated-through hole 3, second
Row's plated-through hole 5 constitutes 1/8th mould substrate integrated wave-guide cavity waves, is designated as a cavity；Part, upper strata on upper metal level 1
Dielectric substrate 2, intermediate metal layer 8 and first row plated-through hole 3, second row plated-through hole 5 constitute 1/8th mould substrates
Integral waveguide cavity, is designated as No. two cavitys；1 time part of lower metal layer, layer dielectric substrate 13, the row of intermediate metal layer 8 and the 3rd
Plated-through hole 9, the 4th row's plated-through hole 10 constitutes 1/8th mould substrate integrated wave-guide cavity waves, is designated as No. four cavitys；Under
Part, layer dielectric substrate 13, the row's plated-through hole 9 of intermediate metal layer 8 and the 3rd, the 4th row's plated-through hole on metal level 1
10 constitute 1/8th mould substrate integrated wave-guide cavity waves, are designated as No. three cavitys.
The high-frequency for being based on 1/8th mould substrate integration wave-guides according to claim 3 selectively balance band logical filter
Ripple device, it is characterised in that the intermediate metal layer 8 sets the first hole 6 of rectangle, and sector the second hole 7, wherein the
Two holes 7 are 45 degree of sector, and the second hole 7 the center of circle at the acute angle of upper metal level 1；First hole 6 is used for
The coupling between No. two cavitys and No. three cavitys is provided, the second hole 7 is used for providing the coupling between a cavity and No. four cavitys
Close.Weak coupling can be produced by the second hole 7 between the first feeding microstrip line 4 and the second feeding microstrip line 12 simultaneously.
Embodiment 1
With reference to Fig. 1 and Fig. 2, the high-frequency selectivity bandpass filtering based on 1/8th mould substrate integration wave-guides in the present invention
Device, including top dielectric substrate 2 and layer dielectric substrate 13, are designed, every layer of dielectric thickness using Rogers RO3010 dielectric-slabs
It is 25mil, relative dielectric constant is 10.2.The upper surface of the top dielectric substrate 2 is provided with metal level 1, layer dielectric
The lower surface of substrate 13 is provided with lower metal layer 11, and upper lower metal layer 1,11 is isosceles right triangle, right angle length of side L1=
15.02mm.The top dielectric substrate 2 is provided with first and second row's plated-through hole 3,5, the corresponding position of layer dielectric substrate 13
Install third and fourth row's plated-through hole 9,10；Between plated-through hole diameter 0.6mm, adjacent through-holes spacing 1mm, through hole 3 and 5
Away from W1=6mm, through hole 5 is respectively L2=9.93mm, L3=11.31mm to the distance of two acute angles of isosceles right triangle.Upper,
Intermediate metal layer 8 is set between layer dielectric substrate 2,13；The intermediate metal layer 3 sets first hole 6 of rectangle, with
And second hole 7 of sector, rectangular apertures L4=4.2mm long, W3=0.7mm wide, to upper metal level hypotenuse apart from S2
=0.31mm, to straight line where the through hole center of circle apart from S3=1mm, fan-shaped hole is 45 degree of sector, and the second hole 7 circle
The heart is located at the acute angle of upper metal level 1, radius R=4.6mm.First feeding microstrip line 4 is arranged at top dielectric substrate 2, and
Hypotenuse with upper metal level 1 connects；Article 2 feeding microstrip line 12 is arranged at layer dielectric substrate 13, and with lower metal layer 11
Hypotenuse connects；Micro belt line width W0.584mm, to the nearest acute angle of upper lower metal layer apart from S1=6.73mm.
Fig. 3 is the coupling topology structure of substrate integration wave-guide bandpass filter of the invention, wherein, S represents source, and L is represented
Load, R1, R2, R3, R4 represent one, two, three, No. four resonators respectively.
Fig. 4 is emulation and the test result of the filter freguency response curve.It is seen in the figure that, filter centre frequency
Be 2.96GHz, three dB bandwidth is 520MHz, minimum Insertion Loss is 1.35dB, four transmission zeros be located at respectively 1.6GHz,
2.58GHz, 3.38GHz and 4.88GHz.
The unique texture that high-frequency selectivity bandpass filter proposed by the present invention is used, two are produced in passband both sides respectively
Individual to have highlighted good frequency selectivity with outer zero point, to employ 1/8th substrates integrated for structure proposed by the present invention in addition
Wave-guide cavity wave structure, is greatly reduced volume, and the characteristics of have low-loss, high power capacity concurrently.
Claims (4)
1. one kind is based on the high-frequency selectivity bandpass filter of 1/8th mould substrate integration wave-guides, it is characterised in that the filter
Ripple device is based on 1/8th mould substrate integration wave-guides, including top dielectric substrate (2) and layer dielectric substrate (13), the upper strata
The upper surface of dielectric substrate (2) is provided with metal level (1), and the lower surface of layer dielectric substrate (13) is provided with lower metal layer
(11) intermediate metal layer (8), is set between top dielectric substrate (2), layer dielectric substrate (13)；The top dielectric substrate
(2) first row plated-through hole (3), second row plated-through hole (5) are provided with, the corresponding position of layer dielectric substrate (13) sets
Put the 3rd row's plated-through hole (9), the 4th row's plated-through hole (10)；
The upper metal level (1), lower metal layer (11) are isosceles right triangle；First feeding microstrip line (4) is arranged at
Top dielectric substrate (2), and connect with the hypotenuse of upper metal level (1)；Article 2 feeding microstrip line (12) is arranged at layer dielectric
Substrate (13), and connect with the hypotenuse of lower metal layer (11)；The intermediate metal layer (3) sets first hole of rectangle
, and second hole (7) for sector (6).
2. it is according to claim 1 be based on 1/8th mould substrate integration wave-guides high-frequency selectivity bandpass filter,
Characterized in that, the feeding microstrip line (4) is connected with the hypotenuse of upper metal level (1) near sector gap, the feed is micro-
It is connected near sector gap with the hypotenuse of lower metal layer (11) with line (12), and two feeding microstrip lines are on intermediate metal layer
(8) it is symmetrical above and below.
3. it is according to claim 2 be based on 1/8th mould substrate integration wave-guides high-frequency selectivity bandpass filter,
Characterized in that, the upper metal level (1) straight line point where first row plated-through hole (3), second row plated-through hole (5)
It is upper and lower two parts, wherein what is be connected with the first feeding microstrip line is designated as part under upper metal level (1), not with feeding microstrip line phase
What is connected is designated as part on metal level (1)；Lower metal layer (11) is by the 3rd row's plated-through hole (9), the 4th row's plated-through hole
(10) straight line where is divided into upper and lower two parts, wherein what is be connected with the second feeding microstrip line is designated as part under lower metal layer (1), no
What is be connected with feeding microstrip line is designated as part on lower metal layer (1)；
Part, top dielectric substrate (2), intermediate metal layer (8) and first row plated-through hole (3) under the upper metal level (1),
Second row plated-through hole (5) constitutes 1/8th mould substrate integrated wave-guide cavity waves, is designated as a cavity；On upper metal level (1)
Partly, top dielectric substrate (2), intermediate metal layer (8) and first row plated-through hole (3), second row plated-through hole (5) structure
Into 1/8th mould substrate integrated wave-guide cavity waves, No. two cavitys are designated as；Part under lower metal layer (1), layer dielectric substrate (13),
It is integrated that intermediate metal layer (8) and the 3rd row's plated-through hole (9), the 4th row's plated-through hole (10) constitute 1/8th mould substrates
Wave-guide cavity wave, is designated as No. four cavitys；Part, layer dielectric substrate (13), intermediate metal layer (8) and the 3rd on lower metal layer (1)
Row's plated-through hole (9), the 4th row's plated-through hole (10) constitute 1/8th mould substrate integrated wave-guide cavity waves, are designated as No. three chambers
Body.
4. it is according to claim 3 be based on 1/8th mould substrate integration wave-guides high-frequency selectivity bandpass filter,
Characterized in that, the intermediate metal layer (8) sets first hole (6) of rectangle, and sector the second hole (7), wherein
Second hole (7) is 45 degree of sector, and the center of circle of the second hole (7) is located at the acute angle of upper metal level (1)；First hole
, for providing the coupling between No. two cavitys and No. three cavitys, the second hole (7) is for providing a cavity and No. four chambers for gap (6)
Coupling between body；Can be produced by the second hole (7) between the first feeding microstrip line (4) and the second feeding microstrip line (12) simultaneously
Raw weak coupling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245006.0A CN106785273A (en) | 2016-12-29 | 2016-12-29 | High-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245006.0A CN106785273A (en) | 2016-12-29 | 2016-12-29 | High-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides |
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| CN106785273A true CN106785273A (en) | 2017-05-31 |
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| CN201611245006.0A Pending CN106785273A (en) | 2016-12-29 | 2016-12-29 | High-frequency selectivity bandpass filter based on 1/8th mould substrate integration wave-guides |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911789A (en) * | 2019-11-18 | 2020-03-24 | 电子科技大学 | Substrate integrated waveguide band-pass filter |
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| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN104347917A (en) * | 2014-10-27 | 2015-02-11 | 华南理工大学 | Double-frequency substrate-integrated waveguide band-pass filter with double-layer structure |
| CN105762447A (en) * | 2016-04-21 | 2016-07-13 | 南通大学 | Double frequency difference filter |
| CN106129561A (en) * | 2016-06-03 | 2016-11-16 | 南通大学 | Double frequency-band compact high out-of-side rejection wave filter |
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2016
- 2016-12-29 CN CN201611245006.0A patent/CN106785273A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| CN104347917A (en) * | 2014-10-27 | 2015-02-11 | 华南理工大学 | Double-frequency substrate-integrated waveguide band-pass filter with double-layer structure |
| CN105762447A (en) * | 2016-04-21 | 2016-07-13 | 南通大学 | Double frequency difference filter |
| CN106129561A (en) * | 2016-06-03 | 2016-11-16 | 南通大学 | Double frequency-band compact high out-of-side rejection wave filter |
Non-Patent Citations (1)
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| 廖明，等: ""一种新型的基于SIW的超宽带带通滤波器"", 《微波学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911789A (en) * | 2019-11-18 | 2020-03-24 | 电子科技大学 | Substrate integrated waveguide band-pass filter |
| CN110911789B (en) * | 2019-11-18 | 2021-02-05 | 电子科技大学 | Substrate integrated waveguide band-pass filter |
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Application publication date: 20170531 |