CN106784298A - A kind of device of use liquid large area upset ferroelectric thin film polarization and its application - Google Patents
A kind of device of use liquid large area upset ferroelectric thin film polarization and its application Download PDFInfo
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- CN106784298A CN106784298A CN201611145191.6A CN201611145191A CN106784298A CN 106784298 A CN106784298 A CN 106784298A CN 201611145191 A CN201611145191 A CN 201611145191A CN 106784298 A CN106784298 A CN 106784298A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
Abstract
The invention discloses a kind of use liquid large area upset ferroelectric thin film polarization device, including signal generator, to electrode, substrate, the hearth electrode being formed on substrate, the ferroelectric thin film being formed on hearth electrode, container and liquid；Electrode, substrate, hearth electrode and ferroelectric thin film are both placed in the liquid in container；Hearth electrode is not contacted with connecting position of wires by wired earth, hearth electrode with liquid；Signal generator is connected by wire to electrode；Signal generator is placed in outside container.The whole that the present invention realizes the ferroelectric thin film polarization of large area overturns back and forth, and switching process will not destroy ferroelectric thin film surface texture.Turn processing procedure easy, it is easy to accomplish, and it is with low cost, it is easy to the extensive use of industry.
Description
Technical field
The present invention relates to oxide film material technical field.More particularly, to one kind iron is overturn with liquid large area
The device of conductive film polarization and its application.
Background technology
Ferroelectric thin film is that within the scope of certain temperature, with spontaneous polarization, and its spontaneous polarization direction can be with external electric field
The reverse and reverse crystal film in direction.And because it has good ferroelectricity, piezoelectricity, pyroelectric, electric light and non-thread
Property optical characteristics, before the fields such as microelectronics, photoelectronics, integrated optics and microelectromechanical systems are widely used
Scape, as one of focus that new function material is studied in the world at present.FERROELECTRICS MEMORIES TECHNOLOGY is that current most have prospect and advanced
Nonvolatile memory technology.It has read or write speed high, low energy consumption, endurance high and can compared with other nonvolatile memories
The advantage of retractility.FERROELECTRICS MEMORIES TECHNOLOGY is based on its polarization reversal characteristic, such as ferro-electric random access holder
(FeRAM), its operation principle is exactly the work for binary zero and " 1 " be encoded up storage information by iron electric polarization
With.
Ferroelectric thin film is in fields such as Industrial Catalysis, micro-fluidic system, drug delivery system research and environmental protection sewage disposals
Also there is important application prospect.For example, Robert Ferris in 2012 et al. propose can be using ferroelectric thin film in a liquid
Realize the concept of drug delivery.Due to loading the difference that medicine is subject to the electrostatic force of different polarised directions, there are different decomposition
Speed, can be fabricated to autonomous independent device to realize control and release medicine；Ferroelectric thin film can also promote sewage
Treatment, the absorption to the charged impurity in sewage can be promoted using the powered property in ferroelectric thin film surface, and when absorption
Impurity can be by overturning iron electric polarization when reaching saturation, " discharge impurity ", realizes reusing；Therefore large-area treatment, anti-
Turn the polarised direction of ferroelectric thin film, as the wide variety of important foundation of ferroelectric material.
The method of current large area reversion ferroelectric thin film polarization is mainly in ferroelectric thin film plating metal on surface electrode, outer power-up
Pressure reversion iron electric polarization.But the surface texture of ferroelectric thin film is destroyed in film surface metallized electrode, is unfavorable for ferroelectric thin film
Functional expression realize, hinder ferroelectric thin film extensive use.And inevitably there is crystal in ferroelectric thin film surface texture
Defect, on surface, plated electrode power-up occurs serious electric leakage behavior, it is impossible to realize the whole ferroelectric thin film polarization of large area
Upset.Therefore, how to realize the upset iron electric polarization of large area and will not to destroy ferroelectric thin film surface texture be also current people
The emphasis studied all the time.
Therefore, the device the invention provides a kind of upset ferroelectric thin film polarization of use liquid large area and its application.This hair
Bright device can be polarized with large area upset ferroelectric thin film, and will not destroy ferroelectric thin film surface texture.
The content of the invention
It is an object of the present invention to provide a kind of device of use liquid large area upset ferroelectric thin film polarization.The present apparatus
The whole for realizing the ferroelectric thin film polarization of large area overturns back and forth, and switching process will not destroy ferroelectric thin film surface texture.
Second object of the present invention is to provide a kind of answering for device of use liquid large area upset ferroelectric thin film polarization
With.
To reach above-mentioned first purpose, the present invention uses following technical proposals：
A kind of device of use liquid large area upset ferroelectric thin film polarization, including signal generator, to electrode, substrate, shape
Into the hearth electrode on substrate, the ferroelectric thin film being formed on hearth electrode, container and liquid；It is described to electrode, substrate, hearth electrode
It is both placed in the liquid in container with ferroelectric thin film；The hearth electrode is connected by wired earth, the hearth electrode with wire
Place does not contact with liquid；It is described that signal generator is connected by wire to electrode；The signal generator is placed in outside container.This hair
Bright middle signal generator produces the applied voltage opposite with ferroelectric thin film polarised direction, to electrode and the bottom electricity being formed on substrate
Pole is used to produce the electric field opposite with ferroelectric thin film polarization, liquid to be collected at ferroelectric thin film surface for generation and formed and polarization side
To the positive and negative charge of opposite electric field.
Preferably, the liquid is deionized water, removes other impurities ion, reduces pollution.
Preferably, the preparation method of the ferroelectric thin film is pulse laser sediment method, and height can be grown using the method
The single crystalline ferroelectric thin film and heterojunction structure of extension on substrate of quality.
Preferably, it is described to electrode be metal electrode, the metal electrode be copper electrode, copper metal stable chemical nature,
Do not reacted with water, and it is with low cost.
Preferably, the ferroelectric thin film is bismuth ferrite (BFO), lead zirconate titanate (PZT), barium titanate (BTO), lithium acid niobium
(LNO), potassium tantalate-niobate (KTN), lead titanates (PTO) or strontium bismuth tantalate (SBT).Due to BFO and PZT using it is relatively broad and its rectify
Stupid field is smaller, it is easy to which power-up realizes that iron electric polarization overturns.Therefore, the main ferroelectric thin film predominantly BFO for using of the present invention and
PZT。
Preferably, the hearth electrode is lanthanum strontium manganese oxygen (LSMO), ruthenic acid strontium (SRO) or nickel acid lanthanum (LNO).Due to BFO,
PZT it is long on LSMO hearth electrodes when, due to built in field, can make the whole films of BFO or PZT outside face polarised direction unification be to
It is outer or inside, therefore, the main hearth electrode predominantly LSMO for using of the present invention.
Preferably, the substrate is strontium titanates (STO) or lanthanum aluminate (LAO).Due to BFO, the lattice parameter and STO of PZT
Most matching, BFO the and PZT ferroelectric thin film better quality grown on STO with pulsed laser deposition, and under extra electric field
Polarization is more easy to upset.Therefore, the substrate predominantly strontium titanates that the present invention is used.
Preferably, the hearth electrode elargol is connected with wire.Hearth electrode is connected with wire with elargol can make bottom electricity
Pole is connected with wire will not open circuit.
To reach above-mentioned second purpose, the present invention uses following technical proposals：
A kind of application of the device of use liquid large area upset ferroelectric thin film polarization, comprises the following steps：
1) electrode, substrate, hearth electrode and ferroelectric thin film will be both placed in liquid；
2) voltage opposite with polarised direction outside ferroelectric thin face is applied to electrode with signal generator；
3) power-up is terminated, the voltage output on halt signal generator is taken out ferroelectric thin film and dried up.
Preferably, step 1) in first by hearth electrode by wired earth, then will be to electrode, substrate, hearth electrode and ferroelectric thin
Film is placed in a liquid.
Preferably, step 2) in institute's making alive be size 0-15V, the pulse voltage of frequency 1kHZ-10MHZ, application time
It is 1-5 minutes.Voltage swing is bigger than the coercive field of ferroelectric material, and the bigger ferroelectric thin film polarization upset efficiency of frequency is higher, needs
The time wanted is shorter.
It is of the invention to turn processing procedure simplicity, it is only necessary to may be reversed within 1-5 minutes, it is easy to accomplish, and it is with low cost, just
In the extensive use of industry.
Beneficial effects of the present invention are as follows：
1) signal generator produces the applied voltage opposite with ferroelectric thin film polarised direction in the present invention, to electrode and formation
Hearth electrode on substrate is used to produce the electric field opposite with ferroelectric thin film polarization, liquid to produce and be collected at ferroelectric thin film surface shape
Into the positive and negative charge of the electric field opposite with polarised direction, the whole for realizing the ferroelectric thin film polarization of large area overturns back and forth, and
Switching process will not destroy ferroelectric thin film surface texture.
2) liquid is deionized water in the present invention, removes other impurities ion, reduces pollution；Ferroelectric thin film is swashed using pulse
Prepared by light deposition method, can grow the single crystalline ferroelectric thin film and heterojunction structure of the high-quality extension on substrate；It is to electrode
It is copper electrode, copper metal stable chemical nature does not react with water, and with low cost.
Brief description of the drawings
Specific embodiment of the invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows a kind of schematic device of use liquid large area upset ferroelectric thin film polarization in the embodiment of the present invention 1.
Fig. 2 shows to power up the shape for overturning preceding BFO films using piezoelectricity force microscope (PFM) test in the embodiment of the present invention 1
Polarization diagram (c) outside polarization diagram (b) and face in looks figure (a), face.
Fig. 3 shows to power up in the embodiment of the present invention 1 the test point position A on ferroelectric thin film after upset, and takes at random in addition
4 points position B-E.
Fig. 4 shows the power-up upset ferroelectric thin film obtained using piezoelectricity force microscope (PFM) test in the embodiment of the present invention 1
Polarization diagram (b) outside shape appearance figure (a) at the A of position and face after polarization.
Fig. 5 shows the power-up upset ferroelectric thin film obtained using piezoelectricity force microscope (PFM) test in the embodiment of the present invention 1
Polarization diagram (b) outside the shape appearance figure (a) of the position B after polarization and face, polarization diagram (d) outside the shape appearance figure (c) of position C and face, position D
Shape appearance figure (e) and face outside polarization diagram (f), and position E shape appearance figure (g) and face outside polarization diagram (h).
Fig. 6 shows the preceding ferroelectric thin of power-up upset obtained using piezoelectricity force microscope (PFM) test in the embodiment of the present invention 2
Polarization diagram (b) outside the shape appearance figure (a) of film and face.
Fig. 7 shows the power-up upset ferroelectric thin film obtained using piezoelectricity force microscope (PFM) test in the embodiment of the present invention 2
Polarization diagram (b) outside shape appearance figure (a) and face after polarization.
Fig. 8 shows to turn over ferroelectric thin film polarization using what piezoelectricity force microscope (PFM) test was obtained in the embodiment of the present invention 2
Go back to reset condition shape appearance figure (a) and face outside polarization diagram (b).
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.Similar part is indicated with identical reference in accompanying drawing.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
In the description of the invention, unless otherwise indicated, " multiple " is meant that two or more；Term " on ",
The orientation or position relationship of the instruction such as D score, "left", "right", " interior ", " outward ", " front end ", " rear end ", " head ", " afterbody " are
Based on orientation shown in the drawings or position relationship, it is for only for ease of and describes the present invention and simplify to describe, rather than instruction or dark
Showing the device or element of meaning must have specific orientation, with specific azimuth configuration and operation therefore it is not intended that right
Limitation of the invention.
Embodiment 1
A kind of device of use liquid large area upset ferroelectric thin film polarization, as shown in figure 1, including signal generator 1, to electricity
Pole 2, substrate 3, the hearth electrode 4 being formed on substrate, the ferroelectric thin film 5 being formed on hearth electrode, deionized water 6 and container 7.
In the deionized water 6 being both placed in container 7 to electrode 2, substrate 3, hearth electrode 4 and ferroelectric thin film 5；It is described
By wired earth, the junction of the hearth electrode 4 and wire does not contact hearth electrode 4 with deionized water；It is described that electrode 2 is passed through
Wire connects signal generator 1；Signal generator 1 is placed in outside container 7.
Embodiment 2
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, in the device to electrode be metal
Electrode, ferroelectric thin film is bismuth ferrite (BFO), and hearth electrode is lanthanum strontium manganese oxygen (LSMO), and substrate is strontium titanates (STO), including as follows
Step：
1) using the polarized state PFM figures of AFM test reset condition ferroelectric thin film.
2) hearth electrode is drawn, is connected and be grounded with wire with elargol, then sample is placed in deionized water, noted the bottom of
Electrode elargol is placed in outside deionized water with connecting position of wires, is not contacted with deionized water.
3) apply pulse voltage signal to electrode with signal generator, form opposite with the outer polarised direction of ferroelectric thin face
Electric field；Added voltage swing is 15V, and frequency is the pulse voltage of 10MHZ, totally 3 minutes.
4) power-up is terminated, the voltage output on halt signal generator is taken out ferroelectric thin film and dried up.
Tested using piezoelectricity force microscope (PFM), as shown in Figure 2-5.Due to being influenceed by built in field, BFO-
Direction is upward outside the initial polarization face of LSMO-STO samples.(in 3 position arbitrarily to look for an administrative division map at BFO film samples center
A) test b FO original polarized state (Fig. 2), polarizes upward outside face, after powering up upset in water, finds location A measurement polarization
State, polarize (Fig. 4) inwardly outside face, determines BFO polarization upsets, and pattern is constant.In order to ensure the pole of whole BFO film samples
Change overturns, and in sample in addition to central area, upper left, upper right, lower-left, arbitrarily looks for position B, C, D, E point respectively in lower right area,
The outer polarized state of measuring surface is white, and polarization is downwards (Fig. 5).Illustrate that the polarization of whole BFO films overturns, it is possible to achieve
Large area iron electric polarization overturns, and pattern is without significant change, illustrates that sample surfaces structure does not change.Therefore, using this
Inventive method can realize not destroying the upset ferroelectric thin film polarization of film surface structure and large area.
Embodiment 3
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, in the device to electrode be metal
Electrode, ferroelectric thin film is lead zirconate titanate (PZT), and hearth electrode is ruthenic acid strontium (SRO), and substrate is strontium titanates (STO), and step is with implementation
Example 2, difference is：
Step 3) in institute's making alive be size 10V, the pulse voltage of frequency 1KHZ, totally 5 minutes.
Tested using piezoelectricity force microscope (PFM), as shown in fig. 6-7.Due to being influenceed by built in field, PZT-
Direction is upward outside the initial polarization face of SRO-STO samples.An administrative division map is arbitrarily looked for test PZT at pzt thin film sample center former
The polarized state (Fig. 6) of beginning, is black outside face, and polarization is upward.After powering up upset in water, original measurement position measurement pole is found
Change state, is white outside face, and polarization down (Fig. 7), determines PZT polarization upsets, and pattern is constant.Can be with using the inventive method
Realize that polarised direction (PFM figures are black) upset outwardly is inside (PFM figures are white), Ke Yishi outside the face of original pzt thin film
Existing large area iron electric polarization upset, and the pattern of PZT sample thin films does not change before and after upset.Can using the inventive method
To realize that the upset ferroelectric thin film for not destroying film surface structure and large area polarizes.
Embodiment 4
Using device described in embodiment 3 carry out large area upset ferroelectric thin film polarize, step with embodiment 3, difference
Place is：
Step 3) in institute's making alive be -7V, the pulse voltage of frequency 5MHZ, totally 1 minute.
By applying and embodiment 3) in voltage in opposite direction, the sample powered up after upset can be again overturn as original
State, and do not change the form of ferroelectric thin film, tested using piezoelectricity force microscope (PFM), as shown in Figure 8.In embodiment 3
After carrying out above-mentioned implementation steps on sample after power-up upset, the position tested before is found, black, pole are polarized to outside measuring surface
Change upward.The large area iron electric polarization that can realize original pzt thin film using the inventive method overturns back and forth, and before and after upset
The pattern of PZT sample thin films does not change.Can realize not destroying film surface structure and big face using the inventive method
Long-pending upset ferroelectric thin film polarization.
Comparative example 1
Large area upset ferroelectric thin film is carried out using device described in embodiment 1 to polarize, difference is liquid used
It is running water, other steps are with embodiment 2.
Final result shows：Deionized water is not used, the generation of foreign ion can be caused, ferroelectric thin film sample surfaces can be inhaled
Attached much impurity, destroy sample surfaces structure.
Comparative example 2
Large area upset ferroelectric thin film is carried out using device described in embodiment 1 to polarize, difference is not use lining
Bottom and hearth electrode, directly by ferroelectric thin film by wired earth, other steps are with embodiment 2.
Final result shows：Substrate and hearth electrode are not used, electric field can be caused to be added on ferroelectric thin film sample, ferroelectricity
Polarization cannot overturn.
Comparative example 3
Large area upset ferroelectric thin film is carried out using device described in embodiment 1 to polarize, difference is the bottom electricity
Pole is connected with common glue with wire, and other steps are with embodiment 2.
Final result shows：Elargol is not used, sample can be caused to be grounded, electric field cannot be added in ferroelectric thin film sample
On, iron electric polarization cannot overturn.
Comparative example 4
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 2) in hearth electrode elargol contacted with connecting position of wires with deionized water.
Final result shows：Causing electric field cannot be added on ferroelectric thin film sample, and iron electric polarization cannot overturn.
Comparative example 5
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 3) the middle not pulse voltage for using.
Final result shows：Cause the iron electric polarization partial switching of ferroelectric thin film, it is impossible to realize all upsets.
Comparative example 6
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 3) in the voltage that uses be 30V.
Final result shows：Overtension, easily causes burning out for ferroelectric thin film.
Comparative example 7
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 3) in the electric voltage frequency that uses be 20MHZ.
Final result shows：Electric voltage frequency is too high, easily causes burning out for ferroelectric thin film.
Comparative example 8
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 3) in the electric voltage frequency that uses be 5HZ.
Final result shows：Electric voltage frequency is too low, and it is more long to easily cause the time that need to be overturn, and needs 20 minutes.
Comparative example 9
Using device described in embodiment 1 carry out large area upset ferroelectric thin film polarize, step with embodiment 2, difference
Place is：
Step 3) in voltage apply time be 30s.
Final result shows：The time that voltage applies is too short, easily causes polarization without all upsets.
Comparative example 10
Using prior art, i.e., in ferroelectric thin film surface large area metallized electrode, applied voltage reversion iron electric polarization enters
The upset ferroelectric thin film polarization of row large area.
Final result shows：The polarization that cannot realize ferroelectric thin film is caused to overturn, and film surface is destructurized.
Conclusion：The device that liquid large area proposed by the present invention overturns ferroelectric thin film polarization is an entirety, and it is included
Signal generator, to electrode, deionized water, substrate, hearth electrode and ferroelectric thin film, signal generator is produced and ferroelectricity in the present invention
Membrane polarization applied voltage in opposite direction, is used to produce and is polarized with ferroelectric thin film to electrode and the hearth electrode being formed on substrate
Opposite electric field, deionized water is used to produce the positive negative electricity for being collected at the ferroelectric thin film surface formation electric field opposite with polarised direction
Lotus, cooperates between each component, synergy, makes the action effect of its upset ferroelectric thin film polarization optimal, lacks any
Component can all cause that upset ferroelectric thin film polarization has different degrees of decrease in some aspects.The present apparatus realizes the iron of large area
The whole of conductive film polarization overturns back and forth, and switching process will not destroy ferroelectric thin film surface texture.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention, for those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms, all of implementation method cannot be exhaustive here, it is every to belong to this hair
Obvious change that bright technical scheme is extended out changes row still in protection scope of the present invention.
Claims (10)
1. the device that a kind of use liquid large area upset ferroelectric thin film polarizes, it is characterised in that including signal generator, to electricity
Pole, substrate, the hearth electrode being formed on substrate, the ferroelectric thin film being formed on hearth electrode, container and liquid；It is described to electrode,
Substrate, hearth electrode and ferroelectric thin film are both placed in the liquid in container；The hearth electrode is by wired earth, the hearth electrode
Do not contacted with liquid with connecting position of wires；It is described that signal generator is connected by wire to electrode；The signal generator is placed in
Outside container.
2. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
Liquid is stated for deionized water.
3. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
The preparation method for stating ferroelectric thin film is pulse laser sediment method.
4. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
It is metal electrode to state to electrode.
5. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
It is bismuth ferrite, lead zirconate titanate, barium titanate, lithium acid niobium, potassium tantalate-niobate, lead titanates or strontium bismuth tantalate to state ferroelectric thin film.
6. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
It is lanthanum strontium manganese oxygen, ruthenic acid strontium or nickel acid lanthanum to state hearth electrode.
7. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
Substrate is stated for strontium titanates or lanthanum aluminate.
8. the device that a kind of use liquid large area upset ferroelectric thin film according to claim 1 polarizes, it is characterised in that institute
Hearth electrode elargol is stated to be connected with wire.
9. the application of the device of a kind of use liquid large area upset ferroelectric thin film polarization as described in claim 1-8 is any, its
It is characterised by, described device is used for large area upset ferroelectric thin film polarization, comprises the following steps：
1) electrode, substrate, hearth electrode and ferroelectric thin film will be both placed in liquid；
2) voltage opposite with polarised direction outside ferroelectric thin face is applied to electrode with signal generator；
3) power-up is terminated, the voltage output on halt signal generator is taken out ferroelectric thin film and dried up.
10. a kind of application of the device of use liquid large area upset ferroelectric thin film polarization according to claim 9, its feature
Be, step 1) in first by hearth electrode by wired earth, then liquid will be placed on to electrode, substrate, hearth electrode and ferroelectric thin film
In body；Step 2) in institute's making alive be size 0-15V, the pulse voltage of frequency 1kHZ-10MHZ, application time be 1-5 minutes.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109456088A (en) * | 2018-09-18 | 2019-03-12 | 北京师范大学 | A kind of method of large area printing iron electric polarization |
| CN110473873A (en) * | 2019-07-15 | 2019-11-19 | 华南师范大学 | A kind of preparation method of orderly ferroelectricity topology domain structure array |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101592604A (en) * | 2009-07-03 | 2009-12-02 | 中国科学院上海光学精密机械研究所 | The pick-up unit of laser-induced ferroelectric domain inversion |
| CN102157682A (en) * | 2010-11-25 | 2011-08-17 | 南京理工大学 | One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode |
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2016
- 2016-12-13 CN CN201611145191.6A patent/CN106784298B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101592604A (en) * | 2009-07-03 | 2009-12-02 | 中国科学院上海光学精密机械研究所 | The pick-up unit of laser-induced ferroelectric domain inversion |
| CN102157682A (en) * | 2010-11-25 | 2011-08-17 | 南京理工大学 | One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109456088A (en) * | 2018-09-18 | 2019-03-12 | 北京师范大学 | A kind of method of large area printing iron electric polarization |
| CN110473873A (en) * | 2019-07-15 | 2019-11-19 | 华南师范大学 | A kind of preparation method of orderly ferroelectricity topology domain structure array |
| CN110473873B (en) * | 2019-07-15 | 2022-04-29 | 华南师范大学 | Preparation method of ordered ferroelectric topological domain structure array |
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