CN106784096A - A kind of diode-built-in photovoltaic module - Google Patents
A kind of diode-built-in photovoltaic module Download PDFInfo
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- CN106784096A CN106784096A CN201710044986.6A CN201710044986A CN106784096A CN 106784096 A CN106784096 A CN 106784096A CN 201710044986 A CN201710044986 A CN 201710044986A CN 106784096 A CN106784096 A CN 106784096A
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- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 40
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- 238000010586 diagram Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of diode-built-in photovoltaic module, laminated being prepared from is overlapped by glassy layer, battery lamella and backsheet layer successively, wherein, the battery lamella is sequentially connected in series by multigroup battery blade unit group and formed, the battery blade unit composition array format arrangement, battery blade unit group is sequentially connected in series by multi-disc photovoltaic cell and formed described in every group, is arranged in an array manner per the photovoltaic cell in Battery pack blade unit group；Each column photovoltaic cell in battery blade unit group described in every group is respectively provided with a current input terminal and a current output terminal, and a unit group internal bypass diode is connected between the current input terminal and current output terminal of the adjacent two row photovoltaic cell in battery blade unit group described in every group.The invention provides a kind of diode-built-in photovoltaic module, diode is built-in, therefore not only greatly saves line box materials, attractive in appearance while reduce the volume of line box, convenient transport, and production and the cost of material is low.
Description
Technical field
The present invention relates to solar photovoltaic assembly technical field, more particularly to a kind of Highgrade integration, reduce solar energy group
The volume of part and terminal box, reduces a kind of diode-built-in photovoltaic module of production cost.
Background technology
Solar power generation is sustainable, pollution-free, as a kind of green energy resource, is increasingly subject to pay attention to.Single solar cell is not
Power supply can directly be done to use, some cell series and parallels must be connected as power supply and tightly be packaged into component.Photovoltaic group
Part (being also solar panel) is the core in solar power system, is also most important in solar power system
Part.Its effect is to convert solar energy into electrical energy, and is sent in battery and stores, or promotes loaded work piece.How to carry
Efficiency, the power of photovoltaic module are risen, reducing production cost already turns into the key subjects of development photovoltaic industry.And efficient component one
It is directly photovoltaic crystal silicon component R＆D direction, photovoltaic crystal silicon component power output is relevant with the light intensity for being incident to cell piece surface, carries
The utilization of bloom can effectively improve the power output of component.
The terminal box that the photovoltaic module of prior art is used, no matter split or single-gang junction box, diode all be place
In terminal box.Such structure causes terminal box volume big, and materials are more, cost of idleness.And because diode is in wiring
In box, also it is unfavorable for radiating.Although having occurred in that photovoltaic module structure of the diode not in line box at present, its structure is also
It is existing defects.
In order to solve the above problems, Chinese patent CN102751358A discloses a kind of diode-built-in solar components,
Glass substrate including translucency, the solar cell chip arrays and backboard that are made up of solar battery sheet, described solar energy
Battery chip arrays are sealed between glass substrate and backboard by resin material, between described each column adjacent solar battery piece
Electrically connected by lead, it is characterised in that：Described each column solar battery sheet is in series, the output of each column solar battery sheet
Chip diode is connected between end.Change technical scheme disclosed in patent of invention and use chip diode, although realize
Diode it is built-in with photovoltaic module inside, but need to open whole backboard when diode damages and needs and change or glass plate comes
Changed, be easily damaged component, changed difficulty larger.
Therefore, Chinese patent CN106026905A discloses a kind of photovoltaic module of diode-built-in, including front glass panel,
Solar cell chip arrays, backboard and the line box being arranged on backboard, solar cell chip arrays include some being connected in series
Solar cell string, it is characterised in that be connected with diode between the two string battery strings for needing bypass；The both positive and negative polarity of the diode
It is upper to be welded one section of busbar in advance respectively, and a wherein pole need to draw be connected with line box then weld longer in advance
Busbar；During component stack, the diode that will in advance be welded busbar is connected to the two string batteries for needing to bypass by polarity
Between string；One end of longer busbar has been welded in advance, then this section of bus bar that will be grown is turned up outside extraction component, is used for
It is attached with line box positive/negative；One perforate is set at the backboard of diode correspondence position；Draw after being turned up on the diode
The busbar for going out is derived from tapping；The line box is arranged in perforate, for sealing perforate.The patent of invention is by weldering in advance
The busbar on diode both positive and negative polarity is connected on, directly diode is built in component；Simultaneously by by the remittance of diode one end
Flow bar and turn up extraction, and the mode of perforate is opened up on backboard or back of the body glass and one end of diode is connected with line box, and line
The position of box can only cover perforate.It is so follow-up to be damaged in the event of diode, line box need to only be dismantled, excavate silica gel
And EVA, it is possible to diode is changed, wire terminal box again after replacing.But, technical scheme photovoltaic group disclosed in the patent of invention
The loss of part power output is more serious.
The content of the invention
To overcome problems of the prior art, the invention provides a kind of Highgrade integration, reduce solar components
With the volume of terminal box, a kind of diode-built-in photovoltaic module of production cost is reduced.
A kind of diode-built-in photovoltaic module that the present invention is provided, is folded successively by glassy layer, battery lamella and backsheet layer
Conjunction is laminated to be prepared from, wherein, the battery lamella is sequentially connected in series by multigroup battery blade unit group and formed, the cell piece
Unit composition array format arrangement, battery blade unit group is sequentially connected in series by multi-disc photovoltaic cell and formed described in every group, every group
Photovoltaic cell in battery blade unit group is arranged in an array manner；Each column photovoltaic electric in battery blade unit group described in every group
Pond piece is respectively provided with a current input terminal and a current output terminal, the adjacent two row photovoltaic in battery blade unit group described in every group
A unit group internal bypass diode, the pole of unit group internal bypass two are connected between the current input terminal and current output terminal of cell piece
The negative pole of pipe is connected with the current input terminal of a row photovoltaic cell, the electricity of the photovoltaic cell of positive pole and adjacent column
Stream output end connection；Between the glassy layer and the battery lamella, except passing through EVA glue at the unit group internal bypass diode
Film is bonded, between the battery lamella and the backsheet layer, except viscous by EVA adhesive film at the unit group internal bypass diode
Knot, the unit group internal bypass diode is not glued in the EVA adhesive film, other in the correspondence unit group on the backsheet layer
Manhole is opened up at the diode of road；The glassy layer is pasted with reflexed light film, the backboard in face of the one side of the battery lamella
Aspect is pasted with the reflexed light film to the one side of the battery lamella in the cell piece gap location.
In some embodiments, connect a unit group between battery blade unit group described in two adjacent groups between bypass two poles
The photovoltaic electric that outermost one is arranged in the negative pole and battery blade unit group described in a group of bypass diode between pipe, the unit group
The current input terminal connection of pond piece, the photovoltaic that positive pole is arranged with sides adjacent outermost one in battery blade unit group described in adjacent sets
The current output terminal connection of cell piece.
In some embodiments, bypass diode is not glued in the EVA adhesive film between the unit group, the backboard
On layer manhole is opened up between the correspondence unit group at bypass diode.
In some embodiments, the battery lamella has a total current input and a total current output end, institute
State and a photovoltaic module bypass diode is connected between total current input and total current output end, the photovoltaic module bypasses two poles
The positive pole of pipe is connected with the total current output end, the negative pole of the photovoltaic module bypass diode and the total current input
Connection.
In some embodiments, the photovoltaic module bypass diode is not glued in the EVA adhesive film, the backboard
On layer manhole is opened up at the correspondence photovoltaic module bypass diode.
In some embodiments, the total current input and total current output end are respectively connecting to terminal box, described
Terminal box is located at the backsheet layer back side, and the manhole of the correspondence photovoltaic module bypass diode, in the unit group
Covered by access cover at the manhole of bypass diode between bypass diode and the unit group.
In some embodiments, between each the unit group internal bypass diode, described unit group bypass diode and
The photovoltaic module bypass diode both sides are respectively padded and set an insulating resin cushion block, and the insulating resin cushion block is located at institute respectively
State between battery lamella and the glassy layer, and between the battery lamella and the backsheet layer, the insulating resin cushion block with
The EVA adhesive film linking.
In some embodiments, reflexed light film one side is covered with pyramid groove, the pyramid groove into entire column type arrangement.
In some embodiments, it is in the reflexed light film between the glassy layer and the battery lamella and described
In reflexed light film between battery lamella and the backsheet layer, with pyramid groove one facing to the battery lamella.
In some embodiments, the glassy layer outer surface is coated with antireflection film layer.
A kind of diode-built-in photovoltaic module that the present invention is provided compared with prior art, the advantage is that：
First, a kind of diode-built-in photovoltaic module that the present invention is provided, because diode is built-in, need not reserve in line box
The position of diode is placed, therefore not only greatly saves line box materials, while the volume of line box is reduced, attractive in appearance, convenient fortune
It is defeated, and production and the cost of material is low.
2nd, a kind of diode-built-in photovoltaic module that the present invention is provided, is grouped by by photovoltaic cell, and in every group
Adjacent two row part connects diode, while connecting diode between two adjacent groups, and two poles is connected between total input/output terminal
Pipe, makes photovoltaic cell that there is minimum power output to lose.
3rd, a kind of diode-built-in photovoltaic module that the present invention is provided, each diode is not glued in the EVA adhesive film,
It is convenient directly to change diode when diode is damaged and backsheet layer sets access hole at each diode.
4th, a kind of diode-built-in photovoltaic module that the present invention is provided, in maintenance, raises the access cover on backsheet layer,
Take out cross-over block, you can change corresponding diode, it is convenient and swift, without cutting and dig out EVA adhesive film.
5th, a kind of diode-built-in photovoltaic module that the present invention is provided, battery lamella both sides are covered with reflexed light film, improve
Retention ratio of the sunlight in battery lamella, then improves energy transition rate.
Brief description of the drawings
Fig. 1 schematically shows a kind of sectional view of diode-built-in photovoltaic module of present disclosure；
Fig. 2 is schematically showed in a kind of diode-built-in photovoltaic module provided according to one embodiment of the present invention
The arrangement schematic diagram of photovoltaic cell and diode；
Fig. 3 schematically shows a kind of diode-built-in photovoltaic module according to one embodiment of the present invention offer
Structure schematic diagram；
Fig. 4 is schematically showed in a kind of diode-built-in photovoltaic module provided according to one embodiment of the present invention
The attachment structure schematic diagram of unit group internal bypass diode 52；
Fig. 5 schematically shows the structural representation of reflective membrane in a kind of diode-built-in photovoltaic module of present disclosure
Figure；
Fig. 6 schematically shows the front view of the reflective membrane shown in Fig. 5；
Battery lamella is anti-with both sides during Fig. 7 schematically shows a kind of diode-built-in photovoltaic module of present disclosure
The enlarged schematic partial view of the sectional view of light film.
Specific embodiment
The present invention will be described in further detail by the following examples.It should be appreciated that specific reality described herein
Apply example to be only used to explain the present invention, be not intended to limit the present invention.
Fig. 1 to Fig. 7 schematically shows a kind of diode-built-in photovoltaic disclosed according to one embodiment of the present invention
Component.
As shown in figure 1, a kind of diode-built-in photovoltaic module of present disclosure is by glassy layer 1, battery lamella 5 and the back of the body
Flaggy 4 overlaps laminated being prepared from successively.
Used as preferred, as depicted in figs. 1 and 2, in this implementation method of the invention, battery lamella 5 passes through many Battery packs
Blade unit group 51 is sequentially connected in series and forms, and the 51 one-tenth array format arrangements of battery blade unit group, used as it is further preferred that in this hair
In bright this implementation method, it is sequentially connected in series by multi-disc photovoltaic cell 501 per Battery pack blade unit group 51 and is formed, and per Battery pack
Photovoltaic cell 501 in blade unit group 51 is arranged in an array manner, in this implementation method of the invention, is managed for convenience
Solution, eight Battery pack blade unit groups 51 are included with battery lamella 5, interior per Battery pack blade unit group 51 to include six photovoltaic cells
It is illustrated as a example by 501, certainly, it is not limited to the battery blade unit group 51 and photovoltaic cell 501 of above-mentioned quantity, in this hair
In bright this implementation method, two row, and eight Battery pack piece lists are lined up per six photovoltaic cells 501 in Battery pack blade unit group 51
Tuple 51 lines up four row；As an inventive point in the present invention, in this implementation method of the invention, per Battery pack blade unit group
Each column photovoltaic cell 501 in 51 is respectively provided with a current input terminal and a current output terminal, per Battery pack blade unit group
A diode is connected between the current input terminal and current output terminal of the adjacent two row photovoltaic cell 501 in 51, the diode is
Unit group internal bypass diode 52, wherein, the negative pole of unit group internal bypass diode 52 and the electric current of a row photovoltaic cell 501
Input is connected, and positive pole is connected with the current output terminal of the photovoltaic cell 501 of adjacent column, i.e., as shown in Fig. 2 it is of the invention this
In implementation method, it is sequentially connected in series per six photovoltaic cells 501 in Battery pack blade unit group 51, thus, two row photovoltaic cells
There is fracture 502 in a group between piece 501, unit group internal bypass diode 52 is connected in the group of two row photovoltaic cells 501 and breaks
At mouthfuls 502, and its negative pole is connected with the current input terminal of a row photovoltaic cell 501, the photovoltaic cell of positive pole and another row
501 current output terminal connection.
As preferred, as shown in Fig. 2 in this implementation method of the invention, between two adjacent groups battery blade unit group 51
Also a diode is connected with, the diode is bypass diode 53 between unit group, as shown in Fig. 2 bypass diode between unit group
The current input terminal of the photovoltaic cell 501 that 53 negative pole is arranged with outermost one in a Battery pack blade unit group 51 is connected, positive pole
The current output terminal of the photovoltaic cell 501 arranged with sides adjacent outermost one in adjacent sets battery blade unit group 51 is connected；I.e. such as
Shown in Fig. 2, in this implementation method of the invention, it is sequentially connected in series between two adjacent groups battery blade unit group 51, therefore, two adjacent groups
Bypass diode 53 is connected to two Battery pack pieces between fracture 503 between also certainly existing a group between battery blade unit group 51, unit group
Outermost one is arranged in a Battery pack blade unit group 51 at fracture 503 between the group of unit group 51 at fracture 503, and between its negative pole and group
Photovoltaic cell 501 current input terminal connection, positive pole arranges with sides adjacent outermost one in adjacent sets battery blade unit group 51
Photovoltaic cell 501 current output terminal connection.
As preferred, as shown in Fig. 2 in this implementation method of the invention, battery lamella 5 has a total current input
End and a total current output end, connect a photovoltaic module bypass diode 50 between total current input and total current output end,
The positive pole of photovoltaic module bypass diode 50 is connected with total current output end, the negative pole of photovoltaic module bypass diode 50 and total electricity
Stream input connection.
As it is further preferred that as shown in Figure 1 to Figure 3, in this implementation method of the invention, glassy layer 1 and cell piece
Between layer 5, at bypass diode 53 between unit group internal bypass diode 52, unit group and photovoltaic module bypass diode 50,
Other positions are bonded by EVA adhesive film 2, between battery lamella 5 and backsheet layer 4, except unit group internal bypass diode 52, unit group
Between at bypass diode 53 and photovoltaic module bypass diode 50, other positions are bonded by EVA adhesive film 2, i.e., the present invention this
Bypass diode 53 and photovoltaic module bypass diode 50 be not in implementation method, between unit group internal bypass diode 52, unit group
It is bonded in EVA adhesive film 2, leaves between unit group internal bypass diode 52, unit group by bypass diode 53 and photovoltaic module
The maintenance chamber of the equal size of road diode 50.In addition as shown in figure 3, in this implementation method of the invention, correspondence is single on backsheet layer 4
Manhole 41 is opened up at bypass diode 53 and photovoltaic module bypass diode 50 between tuple internal bypass diode 52, unit group,
As shown in figure 3, total current input and total current output end are respectively connecting to terminal box 6, terminal box 6 is located at the back side of backsheet layer 4,
And at the manhole 41 of correspondence photovoltaic module bypass diode 50, two poles are bypassed between unit group internal bypass diode 52 and unit group
Covered by access cover 411 at the manhole 41 of pipe 53.
It is as shown in Figures 1 to 4, other in each unit group in this implementation method of the invention as still more preferably
Bypass diode 53 and the both sides of photovoltaic module bypass diode 50 are respectively padded and set an insulating resin between road diode 52, unit group
Cushion block 54, insulating resin cushion block 54 is located between battery lamella 5 and glassy layer 1 respectively, and between battery lamella 5 and backsheet layer 4,
Insulating resin cushion block 54 is identical with maintenance chamber size, therefore insulating resin cushion block 54 is connected with EVA adhesive film 2, in maintenance, raises
Access cover 411 on backsheet layer 4, takes out cross-over block 54, you can change corresponding diode, convenient and swift, without cutting simultaneously
Dig out EVA adhesive film.
As preferred, as shown in Figures 5 to 7, a kind of diode-built-in photovoltaic module of present disclosure, glassy layer 1
In face of the one side of battery lamella 5, i.e. the lower surface of glassy layer 1 is pasted with reflexed light film 3, reflective in this implementation method of the invention
The one side of film layer 3 is covered with pyramid groove, and pyramid groove into entire column type arrangement.I.e. as shown in Figures 5 to 7, in this embodiment party of the invention
In formula, reflexed light film 3 is located between battery lamella 5 and top EVA adhesive film 2, and the one side of reflexed light film 3 is covered with pyramid groove, i.e., reflective
The side surface of film layer 3 one is provided with some pyramid structures, therefore, each pyramid groove is respectively provided with an anti-groove 31 high, in the present invention
In this implementation method, pyramid groove is uniformly arranged into array, and above-mentioned anti-groove 31 high bottom land tip towards glassy layer 1 one
Side.In this structure, the upper surface of battery lamella 5 is covered with reflective membrane, under the reflective membrane and glassy layer of its battery lamella upper surface
The effect that the depth on surface is embossed antistructure high is consistent, contributes to the light reflected from battery lamella to glassy layer to reflect telegram in reply again
Pond lamella 5, so that the sunlight injected in component is more present in battery lamella 5.
Used as preferred, as shown in Figures 5 to 7, in this implementation method of the invention, backsheet layer 4 is in face of battery lamella 5
Simultaneously, be pasted with reflexed light film 3 in the gap location of photovoltaic cell 501, as illustrated, reflexed light film 3 be located at battery lamella 5 with
Between square EVA adhesive film 2, the one side of reflexed light film 3 is covered with pyramid groove, i.e. the side surface of reflexed light film 3 one is provided with some pyramid structures,
Therefore, each pyramid groove is respectively provided with an anti-groove 31 high, and in this implementation method of the invention, pyramid groove is uniformly arranged into array
Cloth, and above-mentioned anti-groove 31 high bottom land tip towards the side of backsheet layer 4.In this structure, the reflective membrane of the lower surface of battery lamella 5
Effect be reduce through battery lamella 5 light, the light of battery lamella to be projected is reflected back again by reflexed light film 3
Battery lamella, so that the sunlight injected in component is more present in battery lamella 5.
As it is furthermore preferred that as shown in figure 1, in this implementation method of the invention, the outer surface of glassy layer 1 is coated with antireflective coating
Layer 12, antireflection film layer 12 makes the sunlight of the overwhelming majority through glassy layer 1, effectively prevents the reflection of the upper surface of glassy layer 1.
Described above has shown and described the preferred embodiments of the present invention, as before, it should be understood that the present invention is not limited to
Form disclosed herein, is not to be taken as the exclusion to other embodiment, and can be used for various other combinations, modification and ring
Border, and can be modified by the technology or knowledge of above-mentioned teaching or association area in invention contemplated scope herein.And this
The change and change that field personnel are carried out do not depart from the spirit and scope of the present invention, then all should be in appended claims of the present invention
Protection domain in.
Claims (10)
1. a kind of diode-built-in photovoltaic module, is overlapped through layer successively by glassy layer (1), battery lamella (5) and backsheet layer (4)
Pressure is prepared from, it is characterised in that the battery lamella (5) is sequentially connected in series by multigroup battery blade unit group (51) and formed, institute
State battery blade unit group (51) to be arranged into array format, battery blade unit group (51) is by multi-disc photovoltaic cell described in every group
(501) it is sequentially connected in series and forms, the photovoltaic cell (501) in every Battery pack blade unit group (51) is arranged in an array manner；Often
Each column photovoltaic cell (501) in the group battery blade unit group (51) is respectively provided with a current input terminal and an electric current is defeated
Go out end, the current input terminal and electric current of the adjacent two row photovoltaic cell (501) in battery blade unit group (51) described in every group are defeated
Unit group internal bypass diode (52) is connected between going out end, the negative pole of the unit group internal bypass diode (52) and a row are described
The current output terminal of the photovoltaic cell (501) of the current input terminal connection of photovoltaic cell (501), positive pole and adjacent column
Connection；Between the glassy layer (1) and the battery lamella (5), except unit group internal bypass diode (52) place passes through EVA
Glued membrane (2) is bonded, between the battery lamella (5) and the backsheet layer (4), except unit group internal bypass diode (52) place
Bonded by EVA adhesive film (2), the unit group internal bypass diode (52) is not glued in the EVA adhesive film (2), the back of the body
Correspondence unit group internal bypass diode (52) place opens up manhole (41) on flaggy (4)；The glassy layer (1) is in face of described
The one side of battery lamella (5) is pasted with reflexed light film (3), the backsheet layer (4) in face of the battery lamella (5) one side,
Cell piece (51) gap location is pasted with the reflexed light film (3).
2. a kind of diode-built-in photovoltaic module according to claim 1, it is characterised in that cell piece described in two adjacent groups
Connected between unit group (51) between bypass diode (53) between a unit group, the unit group negative pole of bypass diode (53) with
The current input terminal connection of the photovoltaic cell (501) of the interior row of outermost one of battery blade unit group (51) described in a group, just
Pole is defeated with the electric current of the photovoltaic cell (501) that the interior sides adjacent outermost one of battery blade unit group (51) described in adjacent sets is arranged
Go out end connection.
3. a kind of diode-built-in photovoltaic module according to claim 2, it is characterised in that bypass two between the unit group
Pole pipe (53) is not glued in the EVA adhesive film (2), bypass diode between the correspondence unit group on the backsheet layer (4)
(53) place opens up manhole (41).
4. a kind of diode-built-in photovoltaic module according to claim 3, it is characterised in that battery lamella (5) tool
There are a total current input and a total current output end, a light is connected between the total current input and total current output end
Volt component bypass diode (50), the positive pole of the photovoltaic module bypass diode (50) is connected with the total current output end,
The negative pole of the photovoltaic module bypass diode (50) is connected with the total current input.
5. a kind of diode-built-in photovoltaic module according to claim 4, it is characterised in that the photovoltaic module bypass two
Pole pipe (50) is not glued in the EVA adhesive film (2), the correspondence photovoltaic module bypass diode on the backsheet layer (4)
(50) place opens up manhole (41).
6. a kind of diode-built-in photovoltaic module according to claim 5, it is characterised in that the total current input and
Total current output end is respectively connecting to terminal box (6), and the terminal box (6) is positioned at the backsheet layer (4) back side, and correspondence is described
Manhole (41) place of photovoltaic module bypass diode (50), between the unit group internal bypass diode (52) and the unit group
Manhole (41) place of bypass diode (53) is covered by access cover (411).
7. a kind of diode-built-in photovoltaic module according to claim 5, it is characterised in that other in each described unit group
Bypass diode (53) and the photovoltaic module bypass diode (50) both sides are respectively between road diode (52), the unit group
Pad sets an insulating resin cushion block (54), and the insulating resin cushion block (54) is located at the battery lamella (5) and the glass respectively
Between layer (1), and between the battery lamella (5) and the backsheet layer (4), the insulating resin cushion block (54) and the EVA
Glued membrane (2) is connected.
8. a kind of diode-built-in photovoltaic module according to claim 1, it is characterised in that the reflexed light film (3)
Face is covered with pyramid groove, the pyramid groove into entire column type arrangement.
9. a kind of diode-built-in photovoltaic module according to claim 8, it is characterised in that the glassy layer (1) and institute
It is in stating the reflexed light film (3) between the battery lamella (5) and anti-between the battery lamella (5) and the backsheet layer (4)
In light film layer (3), with pyramid groove one facing to the battery lamella (5).
10. a kind of diode-built-in photovoltaic module according to claim 1, it is characterised in that glassy layer (1) appearance
Face is coated with antireflection film layer (12).
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| CN201710044986.6A CN106784096B (en) | 2017-01-21 | 2017-01-21 | A kind of diode-built-in photovoltaic module |
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| Publication number | Publication date |
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| CN106784096B (en) | 2018-03-30 |
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