CN106784043B - The method of photoelectric device electrode is quickly prepared under a kind of normal temperature and pressure - Google Patents
The method of photoelectric device electrode is quickly prepared under a kind of normal temperature and pressure Download PDFInfo
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- CN106784043B CN106784043B CN201611096020.9A CN201611096020A CN106784043B CN 106784043 B CN106784043 B CN 106784043B CN 201611096020 A CN201611096020 A CN 201611096020A CN 106784043 B CN106784043 B CN 106784043B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000006073 displacement reaction Methods 0.000 claims description 14
- 238000013519 translation Methods 0.000 claims description 11
- 238000010146 3D printing Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The equipment used the invention discloses a kind of method for quickly preparing photoelectric device electrode under normal temperature and pressure is cheap, and the optical path built is simple and convenient, can prepare electrode at normal temperatures and pressures, can choose different materials and does electrode, can design various electrode structures；It can choose different substrates, including flexible transparent.Electrode can also be made according to device requirement, fixed point location, and be not necessarily to template.Scalability of the invention is strong, can according to need change film-forming method；Optical path is easy change or other optical components is added, while the batch preparation of electrode may be implemented.
Description
Technical field
The present invention relates to a kind of methods that photoelectric device electrode is quickly prepared under normal temperature and pressure.
Background technique
During preparing photoelectric device (such as photodetector, LED etc.), electrode preparation is an essential step.
The method prepared at present mainly has photoetching, vapor deposition, sputtering etc..Wherein, photoetching process is to produce accurate, fine in workpiece surface and answer
The chemical processes of miscellaneous thin layer figure are applied to the production of semiconductor devices and integrated circuit more.Photoetching process prepares electrode point
It for bed die processing, gluing, front baking, exposure, development, hard mould, etches, remove photoresist, experimental procedure is complicated, to experimenter's technical requirements
Height, while low efficiency, manufacturing cost are high.Vacuum vapour deposition can be widely used for the preparation of membrane electrode, and vapour deposition method is most outstanding excellent
Point is that equipment is simple, operation is easy, manufactured film purity is high, but vapour deposition method is not readily available the film of crystalline texture, institute
Adhesive force of the film of formation on substrate is smaller, and process repeatability is not good enough, and the operating time is longer.Magnetron sputtering fado is answered
For industrialized production preparation large area, high quality film, film plating layer with substrate binding force is strong, film plating layer is fine and close, uniform；But
It is that the utilization rate of target is not high, generally below 40%, plasma unstable, deposition rate is low and the device is complicated, it should not be used in
Prepare fine nanoscale electrode.
In order to overcome the defect of above method, 3D printing technique prepares electrode and just slowly rises.Leaf rue of University of Fuzhou etc.
The patent " a method of based on 3D printing technique prepare transparent electrode " (publication number: CN104409171A) of people discloses one kind
The method for being widely used in transparent electrode in photoelectric device in conjunction with the advantage of 3D printing technique, preparation.Shanghai divine boat energy development
The Yin Zhenzhong of Co., Ltd et al. patent " it is a kind of using 3D printing make electrode of solar battery " (publication number:
CN203859120U a kind of electrode of solar battery made using 3D printing, including substrate and conductive ink waterline) are disclosed.
But currently used 3D printing technique prepares the method that electrode is all based on inkjet printing, and equipment is expensive, and process is more complex.
Therefore, it is necessary to prepare the method for photoelectric device electrode quickly under a kind of new normal temperature and pressure to solve the above problems.
Summary of the invention
To solve the deficiencies in the prior art, the purpose of the present invention is to provide quickly prepare phototube under a kind of normal temperature and pressure
The method of part electrode.
In order to achieve the above objectives, the present invention adopts the following technical scheme that:
A kind of method that photoelectric device electrode is quickly prepared under normal temperature and pressure, using laser 3D printing device, the laser
3D printing device includes laser, optical shutter, reflecting mirror, focusing objective len and three-D electric displacement platform, and the optical shutter setting exists
Between the lasers and mirrors, the focusing objective len is arranged on the reflected light path of the reflecting mirror, the focusing objective len
Three-D electric displacement platform described in direct projection, comprising the following steps:
1), the substrate is cleaned using supersonic cleaning machine；
2) substrate after, having cleaned step 1) is dried and is put into UV O3 cleaning machine and carried out further
Cleaning；
3) substrate after, having cleaned step 2, which is placed on film-making machine, to be filmed, and sample is obtained；
4) three-D electric displacement platform movement routine, is carried out to electrode using translation stage control software and optical shutter switch carries out
Editor；
5) laser, is opened, optical shutter is closed；
6), the sample that step 3) is prepared is placed on three-D electric displacement platform；
7) sample, is moved to by initial position by control three-D electric displacement platform；
8), the energy of the laser is set, the optical shutter is opened, the laser that the laser issues passes through the light
Shutter is reflected by the reflecting mirror, focuses on the sample surfaces by the focusing objective len later；
8) the three-D electric displacement platform movement routine and optical shutter, obtained according to step 4) switchs, and produces electrode；
9), the electrode that step 8) obtains is cleaned using supersonic cleaning machine, obtains photoelectric device electrode.
Further, the substrate is cleaned using supersonic cleaning machine in step 1) the following steps are included:
Step 1.1: placing the substrate in beaker, and cleaning solvent is added in beaker；
Step 1.2: placing the beaker in supersonic cleaning machine, and water is added；
Step 1.3: opening supersonic cleaning machine and be cleaned by ultrasonic.
Further, carrying out cleaning to the electrode that step 8) obtains using supersonic cleaning machine in step 9) includes following step
It is rapid:
Step 9.1: the electrode sample that step 8) is made is placed in a beaker, and cleaning solvent is added in beaker；
Step 9.2: placing the beaker in supersonic cleaning machine, and water is added；
Step 9.3: opening supersonic cleaning machine and be cleaned by ultrasonic.
The utility model has the advantages that the equipment that the method that photoelectric device electrode is quickly prepared under normal temperature and pressure of the invention uses is cheap,
The optical path built is simple and convenient, can prepare electrode at normal temperatures and pressures, can choose different materials and does electrode, can design various
Electrode structure；It can choose different substrates, including flexible transparent.It can also be according to device requirement, fixed point location production
Electrode, and it is not necessarily to template.Scalability of the invention is strong, can according to need change film-forming method；Optical path be easy change or
Other optical components are added, while the batch preparation of electrode may be implemented.
Detailed description of the invention
Fig. 1 is process and schematic device of the invention.
Fig. 2 is the interdigitated electrode structure designed in the specific test case of apparatus of the present invention.
Fig. 3 is the interdigital electrode pictorial diagram prepared in apparatus of the present invention test case.
Specific embodiment
Below with reference to specific test case, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate this hair
Bright rather than limit the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention various etc.
The modification of valence form falls within the application range as defined in the appended claims.
Embodiment:
It please refers to shown in Fig. 1, Fig. 2 and Fig. 3, the preparation of electrode is carried out according to preparation flow and device.Wherein, substrate 3 is adopted
With quartz glass plate, membrane equipment 5 uses sol evenning machine, and laser 6 uses 405nm continuous laser, and 7 multiplying power of focusing objective len is ×
10, production electrode raw material is Ag nanoparticles solution, and ultrasonic cleaning solvent is acetone.
Specific testing procedure is as follows:
Step 1: ultrasonic cleaning quartz glass plate.Specifically comprise the following steps:
Step 1.1: quartz glass plate 3 being placed in beaker 2, and acetone is added in beaker 2.
Step 1.2: beaker 2 being placed in supersonic cleaning machine 1, and suitable quantity of water is added.
Step 1.3: opening supersonic cleaning machine 1 and be cleaned by ultrasonic, the time is 30 minutes.
Step 2: the quartz glass plate 3 after step 1 has been cleaned, which is dried and is put into UV O3 cleaning machine 4, to carry out into one
Step cleaning, time are 15 minutes.
Step 3: the quartz glass plate 3 after step 2 has been cleaned is placed on spin coating on sol evenning machine 5 and is film-made.Specifically include as
Lower step:
Step 3.1: setting 5 parameter of sol evenning machine, including 3000 revs/min of revolving speed, the time 60 seconds.
Step 3.2: quartz glass plate 3 being placed on spin coating machine rotor, need to prepare electrode one faces upward.
Step 3.3: opening sol evenning machine and adsorb button, quartz glass plate 3 is adsorbed on rotor.
Step 3.4: upper Ag nanoparticles solution is dripped on quartz glass plate 3.
Step 3.5: opening sol evenning machine spin coating button makes rotor quickly rotate film.
Step 4: laser ablation electrode material carries out electrode preparation.Specifically comprise the following steps:
Step 4.1: opening translation stage on computer and control software, carry out translation stage for interdigital electrode figure shown in Fig. 2
Movement routine and optical shutter switch editor.Steps are as follows for specific control program editing:
Step 4.1.1: optical shutter 7 (assuming that laser spot position is at No. 1 red dot) is opened.
Step 4.1.2: translation stage 11 moves back and forth once in vertical direction, and moving distance L is set as 5mm here.
Step 4.1.3: translation stage 11 moves in the horizontal direction distance S, is set as 50 μm here.
Step 4.1.4: repeating 4.1.1 and 4.1.2, and repeatedly 40 times here.The upper half of interdigital electrode is completed to here
Set up meter separately, the vertical line of top half has only drawn 7 signals in figure, actually should be 40.Facula position is at No. 2 red dots at this time
Step 4.1.5: optical shutter 7 is closed.
Step 4.1.6: translation stage 11 is in the mobile D of vertical direction.Hot spot is at No. 3 red dots at this time.
Step 4.1.7: translation stage 11 moves in the horizontal direction distance S/2, and direction is with step 4.1.3 on the contrary, being arranged here
It is 25 μm.
Step 4.1.8: translation stage 11 moves back and forth once in vertical direction, and moving distance L is set as 5mm here.
Step 4.1.9: translation stage 11 moves in the horizontal direction distance S, is set as 50 μm here, direction is the same as step 4.1.7.
Step 4.1.10: repeating 4.1.8 and 4.1.10, repeatedly completes the lower half of interdigital electrode for 40 times to here here
Set up meter separately, the vertical line of lower half portion has only drawn 7 signals in figure, actually should be 40.Facula position is at No. 4 red dots at this time.
Step 4.1.11: optical shutter 7 is closed.
Step 4.2: sample 10 prepared by step 3 is placed on three-D electric displacement platform 11.
Step 4.3: electricity driving displacement platform 11 being controlled by computer, sample 10 is made to be moved to desired initial position.
Step 4.4: opening laser 6, energy is set, 80mW is set here.
Step 4.5: laser is reflected by optical shutter 7 by reflecting mirror 8, focuses on sample table by focusing objective len later
Face.
Step 4.6: the movement for the process control translation stage 11 that operating procedure 4.1 is worked out and the Push And Release of optical shutter 7, production
The electrode structure designed out.
Step 5: ultrasonic cleaning electrode.Specifically comprise the following steps:
Step 5.1: the electrode sample that step 4 is made is placed in beaker 2, and acetone is added in beaker 2.
Step 5.2: beaker 2 being placed in supersonic cleaning machine 1, and suitable quantity of water is added.
Step 5.3: opening supersonic cleaning machine 1 and be cleaned by ultrasonic, the time is 5 minutes.
Claims (3)
1. quickly preparing the method for photoelectric device electrode under a kind of normal temperature and pressure, which is characterized in that laser 3D printing device is used,
The laser 3D printing device includes laser (6), optical shutter (7), reflecting mirror (8), focusing objective len (9) and three-D electric displacement
Platform (11), the optical shutter (7) are arranged between the laser (6) and reflecting mirror (8), and focusing objective len (9) setting exists
On the reflected light path of the reflecting mirror (8), three-D electric displacement platform (11) described in focusing objective len (9) direct projection, including it is following
Step:
1), substrate (3) is cleaned using supersonic cleaning machine (1)；
2) substrate (3) after, having cleaned step 1) is dried and is put into UV O3 cleaning machine (4) and carried out into one
Step cleaning；
3) substrate (3) after, having cleaned step 2) is placed on film-making machine (5) and is filmed, and obtains sample (10)；
4) three-D electric displacement platform (11) movement routine, is carried out to electrode using translation stage control software and optical shutter (7) switchs
It is edited；
5) laser (6), are opened, are closed optical shutter (7)；
6), the sample (10) that step 3) is prepared is placed on three-D electric displacement platform (11)；
7) sample (10), is moved to by initial position by control three-D electric displacement platform (11)；
8) energy of the laser (6), is set, is opened the optical shutter (7), the laser that the laser (6) issues passes through
The optical shutter (7) is reflected by the reflecting mirror (8), focuses on the sample (10) table by the focusing objective len (9) later
Face；
8) three-D electric displacement platform (11) movement routine and optical shutter (7), obtained according to step 4) switchs, and produces electrode；
9), the electrode that step 8) obtains is cleaned using supersonic cleaning machine (1), obtains photoelectric device electrode.
2. quickly preparing the method for photoelectric device electrode under normal temperature and pressure according to claim 1, which is characterized in that step
1) in the substrate (3) is cleaned using supersonic cleaning machine (1) the following steps are included:
Step 1.1: substrate (3) being placed in beaker (2), and cleaning solvent is added in beaker (2)；
Step 1.2: beaker (2) being placed in supersonic cleaning machine (1), and water is added；
Step 1.3: opening supersonic cleaning machine (1) and be cleaned by ultrasonic.
3. quickly preparing the method for photoelectric device electrode under normal temperature and pressure according to claim 1, which is characterized in that step
9) in the electrode that step 8) obtains is cleaned using supersonic cleaning machine (1) the following steps are included:
Step 9.1: the electrode sample that step 8) is made is placed in beaker (2), and cleaning solvent is added in beaker (2)；
Step 9.2: beaker (2) being placed in supersonic cleaning machine (1), and water is added；
Step 9.3: opening supersonic cleaning machine (1) and be cleaned by ultrasonic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096020.9A CN106784043B (en) | 2016-12-02 | 2016-12-02 | The method of photoelectric device electrode is quickly prepared under a kind of normal temperature and pressure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096020.9A CN106784043B (en) | 2016-12-02 | 2016-12-02 | The method of photoelectric device electrode is quickly prepared under a kind of normal temperature and pressure |
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| Publication Number | Publication Date |
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| CN106784043A CN106784043A (en) | 2017-05-31 |
| CN106784043B true CN106784043B (en) | 2019-01-11 |
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| CN109884128A (en) * | 2019-03-19 | 2019-06-14 | 西安邮电大学 | A kind of preparation method based on laser ablation plane interdigital electrode gas sensor |
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| CN103173760A (en) * | 2013-03-18 | 2013-06-26 | 张翀昊 | Method for improving compactness of 3D (three dimensional) printing metal part by adopting second laser beam |
| CN104625058A (en) * | 2013-11-13 | 2015-05-20 | 西安博昱新能源有限公司 | Novel laser scanning device for 3D printer |
| CN104409171B (en) * | 2014-05-31 | 2016-09-07 | 福州大学 | A kind of method preparing transparency conductive electrode based on 3D printing technique |
| EP3197981A1 (en) * | 2014-09-23 | 2017-08-02 | Philips Lighting Holding B.V. | Encapsulated materials in porous particles |
| CN105945284B (en) * | 2016-07-14 | 2019-07-23 | 英诺激光科技股份有限公司 | The method and device of laser 3D printing metal works |
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Address after: 211135 2, B unit 300, Zhihui Road, Kirin science and Technology Innovation Park, Jiangning District, Nanjing, Jiangsu. Applicant after: NANJING University OF SCIENCE AND TECHNOLOGY Address before: 210094 Xiaolingwei 200, Xuanwu District, Nanjing, Jiangsu Applicant before: Nanjing University of Science and Technology |
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Granted publication date: 20190111 Termination date: 20211202 |