CN107145039A - A kind of method of simple and quick patterning perovskite quantum dot - Google Patents
A kind of method of simple and quick patterning perovskite quantum dot Download PDFInfo
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- CN107145039A CN107145039A CN201710282494.0A CN201710282494A CN107145039A CN 107145039 A CN107145039 A CN 107145039A CN 201710282494 A CN201710282494 A CN 201710282494A CN 107145039 A CN107145039 A CN 107145039A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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Abstract
The present invention is a kind of method of simple and quick patterning perovskite quantum dot, is comprised the following steps：First, cleaning substrate (3)；2nd, the substrate (3) after step one has been cleaned is placed on spin coating on sol evenning machine (5) and is film-made, and the material of film is perovskite quantum dot；3rd, substrate (3) the surface rendering pattern obtained using laser scanning step 2；4th, using organic solvent step 4 is obtained draw a design after substrate (3) clean, the perovskite quantum dot outside pattern is cleaned up, obtain pattern perovskite quantum dot.The procedure of the simple and quick patterning perovskite quantum dot of the present invention is simple, and speed is fast, can prepare various patterns according to demand, and without template, it is possible to achieve large area pattern quantum dot, and perovskite quantum dot can be patterned at normal temperatures and pressures.
Description
Technical field
The present invention relates to a kind of method of simple and quick patterning perovskite quantum dot.
Background technology
Quanta point material is a kind of nano material of quasi-zero dimension, and it has unique photoelectric characteristic, such as color is a wide range of
Adjustable, narrower transmitted bandwidth, and high photoluminescence quantum efficiencies.Therefore the concern in many fields has been attracted, has especially shown
Show lighting field.At present, the quanta point material of research has a lot, including CdS, CdTe, ZnO, InAs etc..Recently, perovskite
The research of quanta point material is very noticeable, because this material photoluminescence efficiency, electroluminescent efficiency and brightness are all non-
Chang Gao.With the raising of updating for perovskite quanta point material preparation method, and luminescent device manufacturing technology, perovskite
Quanta point material is bound to be applied in actual displayed device in the near future.
In order to realize application of the quanta point material in display, it is very important to carry out patterning to quantum dot film.
At present, it is possible to achieve the method for quantum dot patterning is a lot, such as template, trans-printing method, ink-jet printing process, photoetching process,
3D printing method etc..However, each method has the deficiency and shortcoming of itself, such as precision, yield, expense etc..For example, transfer
Print process, it is a kind of method based on elastic galley, it is possible to achieve high-resolution is patterned, but large area figure relatively difficult to achieve
Case and contact stain can be produced.Ink-jet printing process is a kind of method based on Business Inkjet printing device, it is possible to achieve amount
The pattern direct write of son point, it is not necessary to template, and any substrate can be used, but ink-jet apparatus is expensive and nozzle is easily blocked up
Plug.Photoetching process is a kind of method based on photoetching technique, and it has a set of detailed preparation process, and yield is higher, but system
Standby process steps are more, and the solvent used may destroy quanta point material.
Accordingly, it would be desirable to which a kind of method of simple and quick patterning perovskite quantum dot is to solve the above problems.
The content of the invention
There is provided a kind of side of simple and quick patterning perovskite quantum dot for the problem of present invention exists for prior art
Method.
A kind of method of simple and quick patterning perovskite quantum dot, comprises the following steps：
First, substrate is cleaned；
2nd, the substrate after step one has been cleaned is placed on spin coating on sol evenning machine and is film-made, and the material of the film is calcium
Titanium ore quantum dot；
3rd, the substrate surface obtained using laser scanning step 2 is drawn a design；
4th, using organic solvent step 4 is obtained draw a design after the substrate clean, outside pattern
Perovskite quantum dot clean up, obtain pattern perovskite quantum dot.
Further, the substrate is quartz glass plate.
Further, organic solvent described in step 5 is n-hexane.
Further, drawn a design in step 3 using laser direct-writing device in the substrate surface, the laser straight
Write device includes laser, optical shutter, speculum, focusing objective len and displacement platform, and the laser and optical shutter are respectively positioned on reflection
In the input path of mirror, the optical shutter is arranged between the lasers and mirrors, and the focusing objective len and displacement platform are equal
On the reflected light path of the speculum, the focusing objective len is arranged between the speculum and displacement platform.The present invention makes
Equipment is cheap, and the light path built is easily understood.
Further, the cleaning machine is supersonic cleaning machine.
Further, the displacement platform is three-D electric displacement platform.
Further, substrate is cleaned in step one to comprise the following steps：
1), it is cleaned by ultrasonic substrate；
2), by step 1) cleaning after substrate dry and be put into UVO3Secondary cleaning is carried out in cleaning machine.
Further, the substrate after step one has been cleaned in step 2 is placed on spin coating film bag on sol evenning machine
Include following steps：
3), the substrate is placed on spin coating machine rotor and the absorption button of sol evenning machine is opened, the substrate is needed
The one of film is upwardly；
4) upper perovskite quantum dot solution, is dripped on the substrate；
5) sol evenning machine spin coating button rotation film, is opened.
Further, laser direct-writing device is used to be drawn a design in the substrate surface to be flat by control in step 3
The movement of moving stage and the Push And Release of optical shutter, draw out the pattern of design.
Further, drawn a design in step 3 using laser direct-writing device in the substrate surface including following step
Suddenly：
6), the substrate that surface is film-made is arranged on the movement translation stage；
7) optical shutter, the initial position of the mobile translation stage to continuous part, are closed；
8) drafting of continuous part in optical shutter, the mobile translation stage finishing patterns, is opened；
9), repeat step 7) and step 8), until completing the drafting of whole patterns.
Beneficial effect：The procedure of the simple and quick patterning perovskite quantum dot of the present invention is simple, and speed is fast, can be with
According to demand, various patterns are prepared, and without template, it is possible to achieve large area pattern quantum dot, and can be in normal temperature and pressure
Lower patterning perovskite quantum dot.
Brief description of the drawings
Fig. 1 is flow chart of the invention；
Fig. 2 is the structural representation of laser direct-writing device；
Fig. 3 is patterning perovskite quantum dot pictorial diagram in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
The present invention rather than limitation the scope of the present invention, after the present invention has been read, those skilled in the art are each to the present invention's
The modification for planting the equivalent form of value falls within the application appended claims limited range.
Embodiment 1
The patterning of perovskite quantum dot is carried out according to preparation flow and device.Wherein, substrate 3 uses quartz glass plate,
Membrane equipment uses sol evenning machine 5, and laser 6 uses 405nm continuous lasers, and the multiplying power of focusing objective len 7 is × 10, NA0.25, calcium titanium
Ore deposit quantum dot is CsPbBr3, ultrasonic cleaning solvent is acetone.
Specific testing procedure is as follows：
Step 1：It is cleaned by ultrasonic quartz glass plate.Specifically include following steps：
Step 1.1：Quartz glass plate is placed in beaker 2, and acetone is added in beaker 2.
Step 1.2：Beaker 2 is placed in supersonic cleaning machine 1, and adds suitable quantity of water.
Step 1.3：Open supersonic cleaning machine 1 to be cleaned by ultrasonic, the time is 30 minutes.
Step 2：Quartz glass plate after step 1 has been cleaned is dried and is put into UVO3Carried out in cleaning machine 4 further
Cleaning, the time is 15 minutes.
Step 3：Quartz glass plate after step 2 has been cleaned is placed on spin coating on sol evenning machine 5 and is film-made.Specifically include as follows
Step：
Step 3.1：The parameter of sol evenning machine 5, including 2000 revs/min of rotating speed, 30 seconds time are set.
Step 3.2：Quartz glass plate is placed on spin coating machine rotor, it is necessary to one be film-made upwardly.
Step 3.3：Sol evenning machine absorption button is opened, by quartz glass plate absorption on rotor.
Step 3.4：Perovskite quantum dot solution 3 drips in drop on quartz glass plate.
Step 3.5：Opening sol evenning machine spin coating button makes rotor quickly rotate film.
Step 4：Laser scanning quanta point material is patterned.Specifically include following steps：
Step 4.1：Translation stage control software is opened on computer, translation stage mobile route is carried out for " NUST " monogram
Switch and edit with optical shutter.Specific control program edit step is following (by taking " N " as an example)：
Step 4.1.1：Open optical shutter 7 (assuming that laser spot position be Fig. 2 illustrations in (1) number red point at).
Step 4.1.2：Translation stage 11 moves back and forth once in vertical direction, and displacement is L, and 5mm is set to here.
Step 4.1.3：Translation stage 11 is moved in the horizontal direction apart from S, and 50 μm are set to here.
Step 4.1.4：4.1.2 and 4.1.3 is repeated, is repeated 5 times here.The first stroke of " N ", figure acceptance of the bid are completed to here
Note as (i), facula position is still red point (1).Each pen is made up of quantum dotted line 5 thin, and fine rule is shown in illustration at intervals of S
Enlarged drawing in dotted line frame.
Step 4.1.5：Translation stage 11 is vertically and horizontally moving back and forth L (5mm) and D (4mm) simultaneously.
Step 4.1.6：Translation stage 11 is moved in the horizontal direction apart from S, and 50 μm are set to here.
Step 4.1.7：4.1.5 and 4.1.6 is repeated, is repeated 5 times here.(second of " N " is completed to here, in figure
It is labeled as (ii), facula position is still red point (1))
Step 4.1.8：Close optical shutter 7.
Step 4.1.9：Translation stage 11 is vertically and horizontally while mobile L (5mm) and D (4mm) (facula position
Move on to red point (2)).
Step 4.1.10：Open optical shutter 7.
Step 4.1.11：Translation stage 11 moves back and forth once in vertical direction, and displacement is L, and 5mm is set to here
(inceptive direction is opposite with 4.1.2).
Step 4.1.12：Translation stage 11 is moved in the horizontal direction apart from S, and 50 μm are set to here.
Step 4.1.13：4.1.11 and 4.1.12 is repeated, is repeated 5 times here.The 3rd of " N " is completed to here, is schemed
In be labeled as (iii), facula position still be red point (2)
Step 4.1.14：Close optical shutter 7.
Step 4.2：Sample 10 prepared by step 3 is placed on three-D electric displacement platform 11.
Step 4.3：Electricity driving displacement platform 11 is controlled by computer, sample 10 is moved to desired initial position.
Step 4.4：Laser 6 is opened, energy is set, 100mW is set here.
Step 4.5：Laser is reflected by optical shutter 7 by speculum 8, focuses on sample table by focusing objective len afterwards
Face.
Step 4.6：The movement for the programme-control translation stage 11 that operating procedure 4.1 is worked out and the Push And Release of optical shutter 7, make
Go out the pattern of design.
Step 5：Rinse sample.Specifically include following steps：
Step 5.1：The perovskite sample 10 that step 4 is made is clamped with tweezers, obliquely.
Step 5.2：Organic solvent is taken with dropper, organic solvent is n-hexane here.
Step 5.3：Organic solvent in the top of sample 10, extrusion dropper, is rinsed to sample.
Step 5.4：Repeat step 5.3, is rinsed well until by the quantum dot of remainder.(pattern after flushing is shown in
The pattern shot under Fig. 3, respectively normal light and UV light).
The method of the simple and quick patterning perovskite quantum dot of the present invention can pattern perovskite amount at normal temperatures and pressures
Sub- point.The process of patterning is simple, and speed is fast.The equipment used is cheap, and the light path built is easily understood.Can according to demand,
Various patterns are prepared, and without template.Large area pattern quantum dot can be realized.Expansion is strong：1) film-forming method is opened up
Exhibition, can change film-forming method as needed；2) other optics member devices are easily changed or added to the expansion of ablation light path, light path
Part.
The present invention patterns perovskite quantum using laser writing technology, simplifies prior art pattern quanta point material
Cumbersome technique, reduce cost of manufacture, and adjustable control, for various patterns, large area pattern can be achieved in one-shot forming.
Claims (10)
1. a kind of method of simple and quick patterning perovskite quantum dot, it is characterised in that comprise the following steps：
First, cleaning substrate (3)；
2nd, the substrate (3) after step one has been cleaned is placed on spin coating on sol evenning machine (5) and is film-made, and the material of the film is
Perovskite quantum dot；
3rd, the substrate (3) surface rendering pattern obtained using laser scanning step 2；
4th, using organic solvent step 4 is obtained draw a design after the substrate (3) clean, outside pattern
Perovskite quantum dot is cleaned up, and obtains patterning perovskite quantum dot.
2. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：The substrate
(3) it is quartz glass plate.
3. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：Institute in step 5
Organic solvent is stated for n-hexane.
4. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：Adopted in step 3
With laser direct-writing device in the substrate (3) surface rendering pattern, the laser direct-writing device includes laser (6), optical shutter
(7), speculum (8), focusing objective len (9) and displacement platform (11), the laser (6) and optical shutter (7) are respectively positioned on speculum (8)
Input path on, the optical shutter (7) is arranged between the laser (6) and speculum (8), the focusing objective len (9)
It is respectively positioned on displacement platform (11) on the reflected light path of the speculum (8), the focusing objective len (9) is arranged on the speculum
(8) between displacement platform (11).
5. according to claim 4 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：The cleaning machine
(1) it is supersonic cleaning machine.
6. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：The displacement platform
(11) it is three-D electric displacement platform.
7. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：It is clear in step one
Substrate is washed to comprise the following steps：
1), it is cleaned by ultrasonic substrate (3)；
2), by step 1) substrate (3) after cleaning dries and is put into UVO3Secondary cleaning is carried out in cleaning machine (4).
8. according to claim 1 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：Will in step 2
The substrate (3) after step one has been cleaned is placed on sol evenning machine (5) spin coating film and comprised the following steps：
3), the substrate (3) is placed on sol evenning machine (5) rotor and the absorption button of sol evenning machine (5) is opened, by the substrate
(3) need to be film-made one upwardly；
4) upper perovskite quantum dot solution, is dripped on the substrate (3)；
5) sol evenning machine (5) spin coating button rotation film, is opened.
9. according to claim 4 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：
Use laser direct-writing device in the substrate (3) surface rendering pattern for the shifting by controlling translation stage (11) in step 3
The Push And Release of dynamic and optical shutter (7), draws out the pattern of design.
10. according to claim 9 it is simple and quick patterning perovskite quantum dot method, it is characterised in that：
Comprised the following steps in step 3 using laser direct-writing device in the substrate (3) surface rendering pattern：
6), the substrate (3) that surface is film-made is arranged on the movement translation stage (11)；
7) optical shutter (7), the initial position of the mobile translation stage (11) to continuous part, are closed；
8) drafting of continuous part in optical shutter (7), mobile translation stage (11) finishing patterns, is opened；
9), repeat step 7) and step 8), until completing the drafting of whole patterns.
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| CN201710282494.0A CN107145039A (en) | 2017-04-26 | 2017-04-26 | A kind of method of simple and quick patterning perovskite quantum dot |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231984A (en) * | 2018-01-31 | 2018-06-29 | 华南理工大学 | Perovskite patterning diaphragm that a kind of phase separation means are realized and preparation method thereof |
| CN108774520A (en) * | 2018-03-26 | 2018-11-09 | 南京理工大学 | A kind of preparation method irradiating halogen perovskite caesium lead bromine quantum dot based on liquid laser |
| CN108987613A (en) * | 2018-07-06 | 2018-12-11 | 致晶科技（北京）有限公司 | The preparation method of perovskite quantum dot array |
| CN109560206A (en) * | 2018-10-18 | 2019-04-02 | 南昌大学 | The thin-film patterning method of Colloidal Quantum Dots |
| CN109940278A (en) * | 2019-03-26 | 2019-06-28 | 清华大学 | Using the method for femtosecond laser production perovskite crystalline patterned circuit micro-structure |
| CN110726703A (en) * | 2019-09-09 | 2020-01-24 | 南京理工大学 | Enhanced perovskite CsPbBr3Device and method for quantum dot photoluminescence and fluorescence lifetime |
| CN113122249A (en) * | 2019-12-30 | 2021-07-16 | 致晶科技（北京）有限公司 | Preparation method and application of patterned perovskite quantum dot optical film |
| CN114120798A (en) * | 2021-11-24 | 2022-03-01 | 北京航空航天大学杭州创新研究院 | Anti-counterfeiting mark based on quantum dot photoluminescence characteristics and laser engraving and manufacturing method thereof |
| CN114672308A (en) * | 2022-04-19 | 2022-06-28 | 上海大学 | Preparation method of perovskite fluorescent anti-counterfeiting structure and perovskite fluorescent anti-counterfeiting label |
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| CN108231984A (en) * | 2018-01-31 | 2018-06-29 | 华南理工大学 | Perovskite patterning diaphragm that a kind of phase separation means are realized and preparation method thereof |
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| CN109940278A (en) * | 2019-03-26 | 2019-06-28 | 清华大学 | Using the method for femtosecond laser production perovskite crystalline patterned circuit micro-structure |
| CN110726703A (en) * | 2019-09-09 | 2020-01-24 | 南京理工大学 | Enhanced perovskite CsPbBr3Device and method for quantum dot photoluminescence and fluorescence lifetime |
| CN113122249A (en) * | 2019-12-30 | 2021-07-16 | 致晶科技（北京）有限公司 | Preparation method and application of patterned perovskite quantum dot optical film |
| CN113122249B (en) * | 2019-12-30 | 2023-04-07 | 致晶科技（北京）有限公司 | Preparation method and application of patterned perovskite quantum dot optical film |
| CN114120798A (en) * | 2021-11-24 | 2022-03-01 | 北京航空航天大学杭州创新研究院 | Anti-counterfeiting mark based on quantum dot photoluminescence characteristics and laser engraving and manufacturing method thereof |
| CN114120798B (en) * | 2021-11-24 | 2024-01-12 | 北京航空航天大学杭州创新研究院 | Anti-fake mark based on quantum dot photoluminescence characteristic and laser engraving and manufacturing method thereof |
| CN114672308A (en) * | 2022-04-19 | 2022-06-28 | 上海大学 | Preparation method of perovskite fluorescent anti-counterfeiting structure and perovskite fluorescent anti-counterfeiting label |
| CN114672308B (en) * | 2022-04-19 | 2023-01-06 | 上海大学 | Preparation method of perovskite fluorescent anti-counterfeiting structure and perovskite fluorescent anti-counterfeiting label |
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