CN106784042A - A kind of preparation method of hybrid solar cell - Google Patents
A kind of preparation method of hybrid solar cell Download PDFInfo
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- CN106784042A CN106784042A CN201611090967.9A CN201611090967A CN106784042A CN 106784042 A CN106784042 A CN 106784042A CN 201611090967 A CN201611090967 A CN 201611090967A CN 106784042 A CN106784042 A CN 106784042A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 62
- 239000010703 silicon Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 55
- 239000007788 liquid Substances 0.000 claims description 34
- 229910000846 In alloy Inorganic materials 0.000 claims description 26
- 238000007639 printing Methods 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 19
- 239000003153 chemical reaction reagent Substances 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- 238000011109 contamination Methods 0.000 claims description 9
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000001680 brushing effect Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000009501 film coating Methods 0.000 abstract 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 32
- 238000004528 spin coating Methods 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229920000144 PEDOT:PSS Polymers 0.000 description 8
- 230000002508 compound effect Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 238000010025 steaming Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000012797 qualification Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to cell manufacturing techniques field, there is provided a kind of method for preparing hybrid solar cell, refer to electrode map brushing method, battery conductive thin film coatings method by inserting, realization prepares hybrid solar cell at low ambient temperatures, and the performance of battery other side is not influenceed, so as to effectively increase the automatization level of hybrid solar cell manufacture, avoid and cause damage to organic film due to high-temperature technology in finger electrode production process is inserted, the service efficiency of battery is improve, the preparation method of hybrid solar cell is simplified.
Description
Technical field
The invention belongs to solar cell preparing technical field, more particularly to a kind of preparation side of hybrid solar cell
Method.
Background technology
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.At present, in all of solar cell, crystal silicon solar energy battery is
One of solar cell of business promotion on a large scale is arrived, this is that there are extremely abundant reserves in the earth's crust due to silicon materials, together
When silicon solar cell compare other kinds of solar cell, have excellent electric property and mechanical performance.Therefore, crystal
Silicon solar cell is in photovoltaic art in occupation of consequence.
At present, hybrid solar cell receives everybody extensive concern, the advantage is that：Because its front does not have main grid
Line, reduces the shading of cell piece, improves the conversion efficiency of cell piece, when component is made, it is possible to reduce welding is to battery
The shading influence of piece, while can reduce the series resistance of cell piece using new packaged type, the power for reducing cell piece is damaged
Lose.
In the prior art, the conventional method for preparing N-type back contact solar cell is in silicon chip by liquid source thermal diffusion
Two sides form boron-dopped layer and phosphorus doping layer respectively, wherein, boron-dopped layer and N-type matrix form PN junction.However, the method is deposited
In following problem：(1) liquid source diffusion needs the pyroprocess could to realize, 800~900 DEG C are needed especially with respect to phosphorus diffusion
For temperature, boron diffusion temperature is general high 900~1100 DEG C, and the time for needing is longer, and this can produce harmful effect to silicon chip,
Its minority carrier life time is reduced, the photoelectric transformation efficiency of solar cell is eventually influenceed；(2) due to the positive and negative electrode of back contact battery
Welding position be all located at the back side of battery, it is desirable to the welding position of front electrode must be in off state with back side doped layer, i.e.,
The welding position of front electrode can not be directly connected to back side doped layer, and this requires that the welding position of front electrode and its periphery are certain
Range areas can not have the back side to adulterate, and will otherwise form short circuit；The method of above-mentioned use liquid source diffusion prepares back side doped layer
It is difficult to directly selectively be doped, it is necessary to the method removed after using previously prepared barrier layer or diffusion in specific region
Above-mentioned requirements are realized, complex technical process, difficulty are larger.
Hybrid solar cell mostly uses spin-coating method in preparing in the prior art, and spin-coating method to there is spin coating uneven
Defect, so as to have a strong impact on the performance of battery, and spin-coating method is not easy to mechanized operation, so as to influence industrial effect
Rate；The making of conventional solar cell electrode generally using the method for thermal evaporation and sputtering electrode, can both approaches make
The drawbacks of electrode possesses inevitable, it is required for being operated at high temperature, and it is thin because there is organic p-type in solar cell
Film its meet high temperature when, performance can be affected, in addition damage, and its in use consumption it is also larger, in order to overcome
These defects are, it is necessary to a kind of method for preparing finger-inserting type solar energy electrode at low ambient temperatures.
The content of the invention
In order to solve in the prior art spin-coating method smear uneven and conventional high temperature under make electrode and influence battery performance
Technical problem, the invention provides a kind of method for preparing hybrid solar cell.
The technical scheme is that comprise the following steps, a, silicon substrate is cleaned；B, by concentration be 5% DMSO
With the well mixed stirrings of the Ttriton X-100 that concentration is 1%；C is by the DMSO that concentration the is 5% and Ttriton that concentration is 1%
X-100 mixing, filter and add stand-by in ink-jet printer cartridge A；Nanogold particle is diluted and is put into print cartridge B by d with IPA solution
In；E is using the setting of printing figure on a silicon substrate of the mixture in A print cartridges；F is printed using the material in B print cartridges in PSS layer
With identical figure in step d, then annealed；G forms P-type conduction film in layer-of-substrate silicon bottom by spraying process；H will
Ga, In are with ratio 1：1-3 carries out Hybrid Heating, forms Ga-In liquid alloys, is next covered in the slotting finger-type mask of metal and receives
In rice layer surface, liquid Ga-In alloys are picked with brush, be coated in mask surface, and be completely covered, treat that Ga-In liquid alloys are cold
But after being changed into solid-state, mask is removed, forms finger-inserting type electrode；I coats Ga-In aluminium alloys in P-type conduction film bottom, after cooling
Form metal back electrode.
In step a by silicon substrate cleaned specially (1) by silicon substrate print in NH4OH+H2O2Reagent soaks sample
5min, dries, after taking-up to remove sample surfaces organic remains；(2) print removed after the organic remains of surface is made again
Use HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove ionic contamination.
It is by the well mixed mixings time of the DMSO that concentration the is 5% and Ttriton X-100 that concentration is 1% in step b
10-30 minutes.
5%DMSO and 1%Ttriton X-100 mixtures are filtered with 0.3-0.7 aqueous filter in step c.
In step d by nanogold particle with IPA solution dilution ratio be 1:3-20.
Annealing temperature in step f is 100-150 DEG C, and the time is 10-30min.
P-type conduction film thickness in the step g is 70-100nm.
By Ga, In with ratio 1 in step h：1 carries out Hybrid Heating minimum temperature for 95 DEG C.
The beneficial effects of the invention are as follows reducing the production cost of solar cell, it is ensured that hull cell distribution is more equal
It is even, the preparation temperature of battery electrode is reduced, so as to effectively improve the photoelectric transformation efficiency of battery.
Brief description of the drawings
In order to illustrate more clearly of technical scheme, embodiment will be described below needed for accompanying drawing make simple
Introduce, it should be apparent that, drawings in the following description are only some embodiments of the present invention, to those of ordinary skill in the art
For, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings, these accompanying drawings institute is straight
Connecing the technical scheme for obtaining should also belong to protection scope of the present invention.
Fig. 1 is the schematic diagram of heretofore described battery structure.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below to specific reality of the invention
The mode of applying elaborates.Elaborate many details in order to fully understand the present invention in the following description.But this
Invention can be implemented with being much different from other manner described here, and those skilled in the art can be without prejudice to the present invention
Similar improvement is done in the case of intension, therefore the present invention is not limited by following public specific embodiment.
Embodiment 1 takes silicon substrate and is cleaned the technical scheme is that comprise the following steps first, washes away its surface
Organic remains and ionic contamination；100g concentration is weighed afterwards for 5%DMSO and 100g concentration is 1%TtritonX-100
Well mixed stirring；Then carried out after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by during flat plate ink-jet ink-cases of printers is added after filter；Next nano-size MnO2 particle is diluted with IPA solution and is put
Enter in print cartridge B, the figure for wanting printing is set in printer, and it is 1 to set the RGB ratio of print colors：1：1, electricity
The color drawn in brain is black and white, and colour brightness takes 120；The silicon substrate that will be cleaned up is placed on flat board, then using A
The Ttriton X-100 mixtures that concentration in print cartridge is 5% DMSO and concentration is 1% print set on a silicon substrate
Figure, forms PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；In B print cartridges being recycled after institute's printing curve is dried
Material, i.e., the nano-size MnO2 particle for being diluted through IPA solution, printing and identical figure, Ran Houfang in step d in PSS layer
To enter annealed in baking oven；It is then after temperature is down to room temperature then thin by spraying process formation P-type conduction in layer-of-substrate silicon bottom
Film, the wherein thickness of P-type conduction film are realized by adjusting gray scale；Next by Ga, In with ratio 1：1 carries out mixing is put into
Heated in dry pot, formed Ga-In liquid alloys, metal next is inserted into finger-type mask is covered in nanometer layer surface, is used
Brush picks liquid Ga-In alloys, is coated in mask surface, and is completely covered, after the cooling of Ga-In liquid alloys is changed into solid-state,
Mask is removed, finger-inserting type electrode is formed；It is last to coat Ga-In aluminium alloys in P-type conduction film bottom, the metal back of the body is formed after cooling
Electrode.P-type conduction film is made using spraying process in present embodiment, spin-coating method is solved and is lacked because its smearing is uneven
Fall into, while avoiding the dependence to artificial qualification, be easy to automation mechanized operation, yield rate is higher；ITO is increased in the present invention
The design of transparent conductive film, can not only play effective passivation cell back side, compound effect be reduced, while improve back electrode
Series resistance, is conducive to improving the photoelectric transformation efficiency of battery；In addition in the present invention by Ga-In alloy repetition tests, most
Ratio in Ga-In alloys is determined eventually, the demand of manufacture electrode under low temperature environment is met, traditional electricity instead of using map brushing method
Hot steaming method and sputtering method that pole makes, on the premise of solar cell properties are ensured, it is to avoid high-temperature technology is thin to organic p-type
The damage of film, and reduce usage amount.
Embodiment 2 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.100g concentration is weighed afterwards for 5%DMSO and 100g concentration is the well mixed stirrings of 1%Ttriton X-100；
Then flat board is added after being filtered after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by in ink-jet printer cartridge；Next nano-size MnO2 particle is diluted with IPA solution and is put into print cartridge B, beaten
The figure for wanting printing is set in print machine, and it is 1 to set the RGB ratio of print colors：1：1, the color drawn in computer
It is black and white, colour brightness takes 120；The silicon substrate that will be cleaned up is placed on flat board, is then using the concentration in A print cartridges
5% DMSO and concentration is that 1% Ttriton X-100 mixtures print set figure on a silicon substrate, is formed
PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；Material in recycling B print cartridges after institute's printing curve is dried, that is, pass through
The nano-size MnO2 particle that IPA solution diluted, printing and identical figure in step d, are then placed in entering in baking oven in PSS layer
Row annealing；Then after temperature is down to room temperature, then P-type conduction film, wherein p-type are formed by spraying process in layer-of-substrate silicon bottom
The thickness of conductive film is realized by adjusting gray scale；Next by Ga, In with ratio 1：1 carried out during mixing is put into dry pot
Heating, forms Ga-In liquid alloys, and metal next is inserted into finger-type mask is covered in nanometer layer surface, and liquid is picked with brush
State Ga-In alloys, are coated in mask surface, and are completely covered, and after the cooling of Ga-In liquid alloys is changed into solid-state, remove mask, shape
Into finger-inserting type electrode；It is last to coat Ga-In aluminium alloys in P-type conduction film bottom, metal back electrode is formed after cooling.This implementation
P-type conduction film is made using spraying process in mode, spin-coating method is solved because of the uneven defect of its smearing, while avoiding
Dependence to artificial qualification, is easy to automation mechanized operation, and yield rate is higher；Transparent conductive film is increased in the present invention
Design, can not only play effective passivation cell back side, reduce compound effect, while improve back electrode series resistance, have
Beneficial to the photoelectric transformation efficiency for improving battery；In addition by Ga-In alloy repetition tests, Ga- being finally determined in the present invention
Ratio in In alloys, meets the demand of manufacture electrode under low temperature environment, and the heat of traditional electrode making is instead of using map brushing method
Steaming method and sputtering method, on the premise of solar cell properties are ensured, it is to avoid damage of the high-temperature technology to organic p-type film,
And reduce usage amount.
Embodiment 3 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.100g concentration is weighed afterwards for 5%DMSO and 100g concentration is that 1%Ttriton X-100 mix 10 points
Clock, is sufficiently mixed the two；Then make after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by during flat plate ink-jet ink-cases of printers is added after being filtered with 0.3 aqueous worry head；Next by nanometer
MnO2 particles are diluted with IPA solution and are put into print cartridge B, the figure for wanting printing are set in printer, and set printing face
The RGB ratio of color is 1：1：1, the color drawn in computer is black and white, and colour brightness takes 120；The silicon lining that will be cleaned up
Bottom is placed on flat board, is then mixed using the DMSO that the concentration in A print cartridges is 5% and Ttriton X-100 that concentration is 1%
Thing prints set figure on a silicon substrate, forms PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；Treat institute's printed drawings
Shape recycles the material in B print cartridges, i.e., the nano-size MnO2 particle for being diluted through IPA solution, printing and step in PSS layer after drying
Identical figure in rapid d, is then placed in being annealed in baking oven；Then after temperature is down to room temperature, then in layer-of-substrate silicon bottom
P-type conduction film is formed by spraying process, the wherein thickness of P-type conduction film is realized by adjusting gray scale；Next by Ga,
In is with ratio 1：2 heated during mixing is put into dry pot, form Ga-In liquid alloys, metal next is inserted into finger-type and is covered
Film is covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush, is coated in mask surface, and is completely covered, and treats Ga-In
After liquid alloy cooling is changed into solid-state, mask is removed, form finger-inserting type electrode；It is last to coat Ga-In in P-type conduction film bottom
Aluminium alloy, forms metal back electrode after cooling.P-type conduction film is made using spraying process in present embodiment, spin coating is solved
Method, while avoiding the dependence to artificial qualification, is easy to automation mechanized operation, yield rate because of the uneven defect of its smearing
It is higher；The design of transparent conductive film is increased in the present invention, effective passivation cell back side can not only be played, reduced compound
Effect, while improve back electrode series resistance, be conducive to improving the electricity conversion of battery；Pass through in the present invention in addition
To Ga-In alloy repetition tests, ratio in Ga-In alloys is finally determined, meets the demand of manufacture electrode under low temperature environment,
The hot steaming method and sputtering method of traditional electrode making are instead of using map brushing method, on the premise of solar cell properties are ensured, is kept away
Exempt from damage of the high-temperature technology to organic p-type film, and reduce usage amount.
Embodiment 4 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.200g concentration is weighed afterwards for 5%DMSO and 200g concentration is that 1%Ttriton X-100 mix 10 points
Clock, is sufficiently mixed the two；Then make after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by during flat plate ink-jet ink-cases of printers is added after being filtered with 0.5 aqueous worry head；Next by nanometer
MnO2 particles are diluted with IPA solution and are put into print cartridge B, and dilution ratio is 1:3, then the figure for wanting printing is set in printer
Shape, and it is 1 to set the RGB ratio of print colors：1：1, the color drawn in computer is black and white, and colour brightness takes
120；The silicon substrate that will be cleaned up is placed on flat board, is then using the DMSO and concentration that the concentration in A print cartridges is 5%
1% Ttriton X-100 mixtures print set figure on a silicon substrate, form PEDOT：PSS graphics areas need complete
Face covers silicon substrate；Material in recycling B print cartridges after institute's printing curve is dried, i.e., the nanometer for being diluted through IPA solution
MnO2 particles, printing and identical figure in step d, are then placed in being annealed in baking oven in PSS layer；Then treat that temperature drops
To room temperature, then P-type conduction film is formed by spraying process in layer-of-substrate silicon bottom, the thickness of wherein P-type conduction film passes through
Gray scale is adjusted to realize；Next by Ga, In with ratio 1：2 heated during mixing is put into dry pot, form Ga-In liquid
Alloy, next inserts metal finger-type mask and is covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush, is coated in and covers
Film surface, and be completely covered, after the cooling of Ga-In liquid alloys is changed into solid-state, mask is removed, form finger-inserting type electrode；Finally
Ga-In aluminium alloys are coated in P-type conduction film bottom, metal back electrode is formed after cooling.Spraying process is used in present embodiment
P-type conduction film is made, spin-coating method is solved because of the uneven defect of its smearing, while avoiding to artificial qualification
Rely on, be easy to automation mechanized operation, yield rate is higher；The design of transparent conductive film is increased in the present invention, can not only be played
Effective passivation cell back side, reduces compound effect, while improve back electrode series resistance, is conducive to improving the photoelectricity of battery
Transformation efficiency；Met by Ga-In alloy repetition tests, ratio in Ga-In alloys being finally determined in the present invention in addition
The demand of electrode is manufactured under low temperature environment, the hot steaming method and sputtering method of traditional electrode making are instead of using map brushing method, ensured
On the premise of solar cell properties, it is to avoid damage of the high-temperature technology to organic p-type film, and reduce usage amount.
Embodiment 5 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.200g concentration 5%DMSO and 200g1%Ttriton X-100 are weighed afterwards to mix 10 minutes, make the two
It is sufficiently mixed；Then 0.45 is used after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by aqueous worry head adds flat plate ink-jet ink-cases of printers after being filtered in；Next by nano-size MnO2 particle
Diluted with IPA solution and be put into print cartridge B, dilution ratio is 1:12, then the figure for wanting printing is set in printer, and
The RGB ratio for setting print colors is 1：1：1, the color drawn in computer is black and white, and colour brightness takes 150；Will cleaning
Clean silicon substrate is placed on flat board, then using the DMSO that the concentration in A print cartridges is 5% and Ttriton that concentration is 1%
X-100 mixtures print set figure on a silicon substrate, form PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；
Material in recycling B print cartridges after institute's printing curve is dried, i.e., the nano-size MnO2 particle for being diluted through IPA solution, in PSS layer
Upper printing and identical figure in step d, are then placed in being annealed in baking oven；Then after temperature is down to room temperature, then in silicon
Substrate layer bottom forms P-type conduction film by spraying process, and the wherein thickness of P-type conduction film is realized by adjusting gray scale；
Next by Ga, In with ratio 1：2 heated during mixing is put into dry pot, Ga-In liquid alloys are formed, next by gold
Category is inserted finger-type mask and is covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush, is coated in mask surface, and cover completely
Lid, after the cooling of Ga-In liquid alloys is changed into solid-state, removes mask, forms finger-inserting type electrode；Finally under P-type conduction film
Portion coats Ga-In aluminium alloys, and metal back electrode is formed after cooling.P-type conduction film is made using spraying process in present embodiment,
Spin-coating method is solved because of the uneven defect of its smearing, while avoiding the dependence to artificial qualification, is easy to automation
Operation, yield rate is higher；The design of transparent conductive film is increased in the present invention, effective passivation cell back of the body can not only be played
Face, reduces compound effect, while improve back electrode series resistance, is conducive to improving the photoelectric transformation efficiency of battery；In addition
By to Ga-In alloy repetition tests, ratio in Ga-In alloys being finally determined in the present invention, system under low temperature environment is met
The demand of mfg. electrode, the hot steaming method and sputtering method of traditional electrode making are instead of using map brushing method, are ensureing solar cell
On the premise of energy, it is to avoid damage of the high-temperature technology to organic p-type film, and reduce usage amount.
Embodiment 6 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.100g5%DMSO and 100g1%Ttriton X-100 are weighed afterwards to mix 10 minutes, make the two abundant
Mixing；Then 0.7 aqueous worry is used after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed
Mark is stand-by head adds flat plate ink-jet ink-cases of printers after being filtered in；Next it is nano-size MnO2 particle is molten with IPA
Liquid dilution is put into print cartridge B, and dilution ratio is 1:20, then the figure for wanting printing is set in printer, and setting is beaten
The RGB ratio for printing color is 1：1：1, the color drawn in computer is black and white, and colour brightness takes 150；By what is cleaned up
Silicon substrate is placed on flat board, then using the DMSO that the concentration in A print cartridges is 5% and Ttriton X-100 that concentration is 1%
Mixture prints set figure on a silicon substrate, forms PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；Wait to beat
Impression shape recycles the material in B print cartridges, i.e., the nano-size MnO2 particle for being diluted through IPA solution to be printed in PSS layer after drying
With identical figure in step d, it is then placed in being annealed in baking oven, annealing temperature is 100 DEG C, and the time is 30min；Then treat
After temperature is down to room temperature, then P-type conduction film, the wherein thickness of P-type conduction film are formed by spraying process in layer-of-substrate silicon bottom
Degree is realized by adjusting gray scale；Next by Ga, In with ratio 1：3 heated during mixing is put into dry pot, form Ga-
In liquid alloys, next insert metal finger-type mask and are covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush,
Mask surface is coated in, and is completely covered, after the cooling of Ga-In liquid alloys is changed into solid-state, remove mask, form finger-inserting type electricity
Pole；It is last to coat Ga-In aluminium alloys in P-type conduction film bottom, metal back electrode is formed after cooling.Used in present embodiment
Spraying process makes P-type conduction film, solves spin-coating method because of the uneven defect of its smearing, while avoiding to artificial skilled
The dependence of degree, is easy to automation mechanized operation, and yield rate is higher；The design of transparent conductive film is increased in the present invention, not only
Effective passivation cell back side can be played, compound effect is reduced, while improve back electrode series resistance, is conducive to improving battery
Electricity conversion；In addition by Ga-In alloy repetition tests, ratio in Ga-In alloys being finally determined in the present invention,
The demand that electrode is manufactured under low temperature environment is met, the hot steaming method and sputtering method of traditional electrode making is instead of using map brushing method,
On the premise of solar cell properties are ensured, it is to avoid damage of the high-temperature technology to organic p-type film, and reduce and use
Amount.
Embodiment 7 is the technical scheme is that comprise the following steps, silicon substrate is cleaned into specially (1) first will
Silicon substrate print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2)
The print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to remove
Ionic contamination.200g5%DMSO and 200g 1%Ttriton X-100 are weighed afterwards to mix 10 minutes, fill the two
Divide mixing；Then after DMSO that above-mentioned concentration is 5% and Ttriton X-100 that concentration is 1% being mixed using 0.7 it is aqueous
It is stand-by to consider mark during flat plate ink-jet ink-cases of printers is added after head is filtered；Next by nano-size MnO2 particle IPA
Solution dilution is put into print cartridge B, and dilution ratio is 1:20, then the figure for wanting printing is set in printer, and sets
The RGB ratio of print colors is 1：1：1, the color drawn in computer is black and white, and colour brightness takes 200；To clean up
Silicon substrate be placed on flat board, then using the DMSO that the concentration in A print cartridges is 5% and Ttriton X- that concentration is 1%
100 mixtures print set figure on a silicon substrate, form PEDOT：PSS graphics areas need to comprehensively cover silicon substrate；Treat
Institute's printing curve recycles the material in B print cartridges, i.e., the nano-size MnO2 particle for being diluted through IPA solution, in PSS layer after drying
Printing and identical figure in step d, are then placed in being annealed in baking oven, and annealing temperature is 100 DEG C, and the time is 30min；And
After after temperature is down to room temperature, then layer-of-substrate silicon bottom by spraying process formed P-type conduction film, the P-type conduction film
It is ito thin film, its thickness is 70nm, the wherein thickness of P-type conduction film is realized by adjusting gray scale；Next by Ga, In
With ratio 1：1 heated during mixing is put into dry pot, and heating-up temperature is 95 DEG C of formation Ga-In liquid alloys, next will
Metal is inserted finger-type mask and is covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush, is coated in mask surface, and completely
Covering, after the cooling of Ga-In liquid alloys is changed into solid-state, removes mask, forms finger-inserting type electrode；Finally in P-type conduction film
Bottom coats Ga-In aluminium alloys, and metal back electrode is formed after cooling.It is thin using spraying process making P-type conduction in present embodiment
Film, solves spin-coating method because of the uneven defect of its smearing, while avoiding the dependence to artificial qualification, is easy to automatic
Change operation, yield rate is higher；The design of transparent conductive film is increased in the present invention, effective passivation cell can not only be played
The back side, reduces compound effect, while improve back electrode series resistance, is conducive to improving battery efficiency；In addition in the present invention
By to Ga-In alloy repetition tests, ratio in Ga-In alloys being finally determined, meet and electrode is manufactured under low temperature environment
Demand, the hot steaming method and sputtering method of traditional electrode making are instead of using map brushing method, are ensureing the premise of solar cell properties
Under, it is to avoid damage of the high-temperature technology to organic p-type film, and reduce usage amount.
Most highly preferred embodiment of the invention is comprised the following steps, first by silicon substrate cleaned specially (1) by silicon substrate
Print is in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample surfaces organic remains；(2) will removal
Print after the organic remains of surface reuses HCl+H2O2Reagent soaks sample 10min, is dried after taking-up, to go deionization dirty
Dye thing.200g5%DMSO and 200g1%Ttriton X-100 are weighed afterwards to mix 10 minutes, are sufficiently mixed the two；
Then the aqueous worry head after the DMSO that above-mentioned concentration the is 5% and Ttriton X-100 that concentration is 1% is mixed using 0.4 enters
Mark is stand-by during flat plate ink-jet ink-cases of printers is added after row filtering；Next it is nano-size MnO2 particle is dilute with IPA solution
It is released into print cartridge B, dilution ratio is 1:15, then the figure for wanting printing is set in printer, and sets printing face
The RGB ratio of color is 1：1：1, the color drawn in computer is black and white, and colour brightness takes 150；The silicon lining that will be cleaned up
Bottom is placed on flat board, is then mixed using the DMSO that the concentration in A print cartridges is 5% and Ttriton X-100 that concentration is 1%
Thing prints set figure on a silicon substrate, forms PEDOT：PSS graphics areas will comprehensively cover silicon substrate；Treat institute's printed drawings
Shape recycles the material in B print cartridges, i.e., the nano-size MnO2 particle for being diluted through IPA solution, printing and step in PSS layer after drying
Identical figure in rapid d, is then placed in being annealed in baking oven, and annealing temperature is 120 DEG C, and the time is 30min；Then treat temperature
After being down to room temperature, then P-type conduction film is formed by spraying process in layer-of-substrate silicon bottom, the P-type conduction film is that ITO is thin
Film, its thickness is 90nm, and the wherein thickness of P-type conduction film is realized by adjusting gray scale；Next by Ga, In with ratio 1：
1 heated during mixing is put into dry pot, and heating-up temperature is 95 DEG C of formation Ga-In liquid alloys, next inserts metal and refers to
Shape mask is covered in nanometer layer surface, and liquid Ga-In alloys are picked with brush, is coated in mask surface, and is completely covered, and is treated
After the cooling of Ga-In liquid alloys is changed into solid-state, mask is removed, form finger-inserting type electrode；It is last to be coated in P-type conduction film bottom
Ga-In aluminium alloys, form metal back electrode after cooling.P-type conduction film is made using spraying process in present embodiment, is solved
Spin-coating method, while avoiding the dependence to artificial qualification, is easy to automation mechanized operation because of the uneven defect of its smearing, into
Product rate is higher；The design of transparent conductive film is increased in the present invention, effective passivation cell back side can not only be played, reduced
Compound effect, while improve back electrode series resistance, is conducive to improving the electricity conversion of battery；In addition in the present invention
By to Ga-In alloy repetition tests, ratio in Ga-In alloys being finally determined, meet and electrode is manufactured under low temperature environment
Demand, the hot steaming method and sputtering method of traditional electrode making are instead of using map brushing method, are ensureing the premise of solar cell properties
Under, it is to avoid damage of the high-temperature technology to organic p-type film, and reduce usage amount.The use of method can in the present embodiment
The efficiency of prepared solar cell is set to improve 13%.
Claims (9)
1. a kind of preparation method of hybrid solar cell, it is characterised in that：Comprise the following steps：A, silicon substrate is carried out clearly
Wash；B, it is 5% DMSO by concentration and the well mixed stirring of Ttriton X-100 that concentration is 1%；Concentration is 5% by c
DMSO and concentration are that 1% Ttriton X-100 mixtures are filtered and added stand-by in ink-jet printer cartridge A；D is by nm of gold
Particle is diluted with IPA solution and is put into print cartridge B；E is using the setting of printing figure on a silicon substrate of the mixture in A print cartridges；F is utilized
Material in B print cartridges printing and identical figure in step d in PSS layer, are then annealed；G is logical in layer-of-substrate silicon bottom
Cross spraying process and form P-type conduction film；H is by Ga, In with ratio 1：1-3 carries out Hybrid Heating, forms Ga-In liquid alloys, connects
To get off be covered in the slotting finger-type mask of metal in nanometer layer surface, liquid Ga-In alloys picked with brush, be coated in mask surface,
And be completely covered, after the cooling of Ga-In liquid alloys is changed into solid-state, mask is removed, form finger-inserting type electrode；I is thin in P-type conduction
Film bottom coats Ga-In aluminium alloys, and metal back electrode is formed after cooling.
2. the preparation method of hybrid solar cell according to claim 1, it is characterised in that：By silicon substrate in step a
Cleaned specially (1) by silicon substrate print in NH4OH+H2O2Reagent soaks sample 5min, is dried after taking-up, to remove sample
Product surface organic remains；(2) print removed after the organic remains of surface is reused into HCl+H2O2Reagent soaks sample
10min, dries, after taking-up to remove ionic contamination.
3. the preparation method of hybrid solar cell according to claim 2, it is characterised in that：It is by concentration in step b
5% DMSO and concentration is that 1% well mixed mixings time of Ttriton X-100 are 10-30 minutes.
4. the preparation method of hybrid solar cell according to claim 3, it is characterised in that：In step c with 0.3-
0.7 aqueous filter is filtered the DMSO that concentration is 5% and the Ttriton X-100 mixtures that concentration is 1%.
5. the preparation method of hybrid solar cell according to claim 4, it is characterised in that：By nm of gold in step d
Particle IPA solution dilution ratio is 1:3-20.
6. the preparation method of hybrid solar cell according to claim 5, it is characterised in that：Annealing temperature in step f
It is 100-150 DEG C to spend, and the time is 10-30min.
7. the preparation method of hybrid solar cell according to claim 1, it is characterised in that：P-type in the step g
Conductive film is ito thin film.
8. the preparation method of hybrid solar cell according to claim 7, it is characterised in that：The ito thin film thickness
It is 70-100nm.
9. the preparation method of hybrid solar cell according to claim 1, it is characterised in that：In step h by Ga, In with
Ratio 1：1 carries out Hybrid Heating minimum temperature for 95 DEG C.
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| JP2010227734A (en) * | 2009-03-25 | 2010-10-14 | Panasonic Electric Works Co Ltd | Mask for use in forming coating film by spray coating |
| CN103296211A (en) * | 2013-05-14 | 2013-09-11 | 苏州大学 | Organic-two-dimensional crystal-inorganic hybrid heterojunction solar cell device and preparation method thereof |
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