CN106783988A - IGBT device with anti-short circuit capability high - Google Patents
IGBT device with anti-short circuit capability high Download PDFInfo
- Publication number
- CN106783988A CN106783988A CN201710007163.6A CN201710007163A CN106783988A CN 106783988 A CN106783988 A CN 106783988A CN 201710007163 A CN201710007163 A CN 201710007163A CN 106783988 A CN106783988 A CN 106783988A
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- China
- Prior art keywords
- grid
- short circuit
- insulating oxide
- metal level
- base
- Prior art date
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Links
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
The present invention relates to a kind of IGBT device with anti-short circuit capability high, FS layers is provided with colelctor electrode, base is provided with FS layers, p-well is provided with base, metal level is provided with p-well, two the first insulating oxides in left and right are provided with metal level, the second insulating oxide is provided with metal level between two the first insulating oxides in left and right, first grid is connected with the bottom of the first insulating oxide, second grid is connected with the bottom of the second insulating oxide, first grid is respectively positioned in base with the bottom of second grid, the left and right sides of the left and right sides in the upper end of first grid and the upper end in second grid is equipped with emitter stage, P+ regions are connected between two emitter stages between second grid and first grid and on the emitter stage on the outside of first grid.To the capacity gauge of holoe carrier when of the invention and then reduction device is short-circuited, so that realize reducing the purpose of short circuit current, can be on the premise of minimum change device saturation voltage drop, hence it is evident that improve device anti-short circuit capability.
Description
Technical field
The present invention relates to a kind of IGBT device, present invention relates especially to a kind of IGBT devices with anti-short circuit capability high
Part, the invention belongs to field of semiconductor.
Background technology
The structure of prior art, in order to pursue lower saturation voltage drop, can increase primitive unit cell density（Groove density increases
Greatly, ditch separation reduction）, the larger negative effect of saturation current can be so brought, and then reduce the anti-short circuit capability of device.
As shown in Fig. 2 the width of grid 2 is consistent in existing device architecture, can so cause higher in primitive unit cell density
In the case of, the short circuit current of device is higher.When device is short-circuited, short circuit current higher can cause caloric value higher, more
Component failure is easily caused, anti-short circuit capability is poor.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided one kind can be in minimum change device saturation
Short circuit current is effectively reduced on the premise of pressure drop, the IGBT device with anti-short circuit capability high of device anti-short circuit capability is improved.
It is described including p-well, first grid, emitter stage, the first insulating oxide, P according to the technical scheme that the present invention is provided
+ region, metal level, FS layers, colelctor electrode, second grid, base and the second insulating oxide；FS layers is provided with colelctor electrode,
FS layers is provided with base, and p-well is provided with base, and metal level is provided with p-well, left and right two is provided with metal level first exhausted
Edge oxide layer, the second insulating oxide is provided with the metal level between two the first insulating oxides in left and right, in the first insulation
The bottom of oxide layer is connected with first grid, and second grid, first grid are connected with the bottom of the second insulating oxide
Bottom with second grid is respectively positioned in base, in the left and right sides of the upper end of first grid and in the upper of second grid
The left and right sides of end is equipped with emitter stage, between two between second grid and first grid emitter stage and is located at
P+ regions are connected with emitter stage on the outside of first grid.
Width of the width of the second grid more than first grid.
Width of the width of second insulating oxide more than the first insulating oxide.
The width that the present invention passes through changing section grid, and then reduce receipts when device is short-circuited to holoe carrier
Collection ability, so that realize reducing the purpose of short circuit current, can be on the premise of minimum change device saturation voltage drop, hence it is evident that improve
Device anti-short circuit capability.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Fig. 2 is the structural representation of background technology.
Specific embodiment
With reference to specific embodiment, the invention will be further described.
P-well 1, first grid 2, emitter stage 3, the first insulating oxide 4, P+ regions 5, metal level 6, FS layer 7, collection should be included
Electrode 8, second grid 9, the insulating oxide 11 of base 10 and second；FS layers 7 is provided with colelctor electrode 8, base is provided with FS layers 7
Area 10, is provided with p-well 1 on base 10, and metal level 6 is provided with p-well 1, and the insulation oxygen of left and right two first is provided with metal level 6
Change layer 4, the second insulating oxide 11 is provided with the metal level 6 between two the first insulating oxides 4 in left and right, in the first insulation
The bottom of oxide layer 4 is connected with first grid 2, and second grid 9, first are connected with the bottom of the second insulating oxide 11
The bottom of grid 2 and second grid 9 is respectively positioned in base 10, in the left and right sides of the upper end of first grid 2 and the
The left and right sides of the upper end of two grids 9 is equipped with emitter stage 3, two between second grid 9 and first grid 2 transmitting
P+ regions 5 are connected between pole 3 and on the emitter stage 3 in the outside of first grid 2.
Width of the width of the second grid 9 more than first grid 2.
Width of the width of second insulating oxide 11 more than the first insulating oxide 4.
In the present invention, colelctor electrode 8 is P+ type, and FS layers 7 is N+ types, and base 10 is N-type.
The present invention can be reduced effectively when device is short-circuited pair by increasing the width of primitive unit cell area part second grid 9
The capacity gauge in hole, so as to reduce shorted devices electric current, mitigates caloric value when device is short-circuited, and realizes that improving device resists
The purpose of short-circuit capacity, simultaneously because part of trench width is broadening, the saturation voltage drop of device does not have particularly apparent change.
Claims (3)
1. a kind of IGBT device with anti-short circuit capability high, including p-well（1）, first grid（2）, emitter stage（3）, it is first exhausted
Edge oxide layer（4）, P+ regions（5）, metal level（6）, FS layers（7）, colelctor electrode（8）, second grid（9）, base（10）With second
Insulating oxide（11）, it is characterized in that：In colelctor electrode（8）It is provided with FS layers（7）, at FS layers（7）It is provided with base（10）, in base
Area（10）It is provided with p-well（1）, in p-well（1）It is provided with metal level（6）, in metal level（6）Inside it is provided with the insulation of left and right two first
Oxide layer（4）, in two the first insulating oxides in left and right（4）Between metal level（6）Inside it is provided with the second insulating oxide（11）,
In the first insulating oxide（4）Bottom be connected with first grid（2）, in the second insulating oxide（11）Bottom connection
There is second grid（9）, first grid（2）With second grid（9）Bottom be respectively positioned on base（10）It is interior, in first grid（2）
Upper end the left and right sides and in second grid（9）The left and right sides of upper end be equipped with emitter stage（3）, positioned at second
Grid（9）With first grid（2）Between two emitter stages（3）Between and positioned at first grid（2）The emitter stage in outside（3）
On be connected with P+ regions（5）.
2. there is the IGBT device of anti-short circuit capability high as claimed in claim 1, it is characterized in that：The second grid（9）'s
Width is more than first grid（2）Width.
3. there is the IGBT device of anti-short circuit capability high as claimed in claim 1, it is characterized in that：Second insulating oxide
（11）Width be more than the first insulating oxide（4）Width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007163.6A CN106783988A (en) | 2017-01-05 | 2017-01-05 | IGBT device with anti-short circuit capability high |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007163.6A CN106783988A (en) | 2017-01-05 | 2017-01-05 | IGBT device with anti-short circuit capability high |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783988A true CN106783988A (en) | 2017-05-31 |
Family
ID=58949677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007163.6A Withdrawn CN106783988A (en) | 2017-01-05 | 2017-01-05 | IGBT device with anti-short circuit capability high |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783988A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644903A (en) * | 2017-09-14 | 2018-01-30 | 全球能源互联网研究院 | Trench gate IGBT device with high anti-short circuit capability and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260648A (en) * | 1996-03-19 | 1997-10-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH11345969A (en) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | Power semiconductor device |
| CN1705136A (en) * | 2004-05-31 | 2005-12-07 | 三菱电机株式会社 | Insulated gate semiconductor device |
| JP2007266622A (en) * | 1996-04-11 | 2007-10-11 | Mitsubishi Electric Corp | High withstand voltage semiconductor device, and method of manufacturing same |
| US20100052044A1 (en) * | 2008-09-04 | 2010-03-04 | Infineon Technologies Austria Ag | Semiconductor device with a trench gate structure and method for the production thereof |
| JP2012064717A (en) * | 2010-09-15 | 2012-03-29 | Toshiba Corp | Semiconductor device |
| JP2014158041A (en) * | 2014-04-21 | 2014-08-28 | Mitsubishi Electric Corp | Semiconductor device |
| CN206388708U (en) * | 2017-01-05 | 2017-08-08 | 江苏中科君芯科技有限公司 | IGBT device with high anti-short circuit capability |
-
2017
- 2017-01-05 CN CN201710007163.6A patent/CN106783988A/en not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260648A (en) * | 1996-03-19 | 1997-10-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP2007266622A (en) * | 1996-04-11 | 2007-10-11 | Mitsubishi Electric Corp | High withstand voltage semiconductor device, and method of manufacturing same |
| JPH11345969A (en) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | Power semiconductor device |
| CN1705136A (en) * | 2004-05-31 | 2005-12-07 | 三菱电机株式会社 | Insulated gate semiconductor device |
| US20100052044A1 (en) * | 2008-09-04 | 2010-03-04 | Infineon Technologies Austria Ag | Semiconductor device with a trench gate structure and method for the production thereof |
| JP2012064717A (en) * | 2010-09-15 | 2012-03-29 | Toshiba Corp | Semiconductor device |
| JP2014158041A (en) * | 2014-04-21 | 2014-08-28 | Mitsubishi Electric Corp | Semiconductor device |
| CN206388708U (en) * | 2017-01-05 | 2017-08-08 | 江苏中科君芯科技有限公司 | IGBT device with high anti-short circuit capability |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644903A (en) * | 2017-09-14 | 2018-01-30 | 全球能源互联网研究院 | Trench gate IGBT device with high anti-short circuit capability and preparation method thereof |
| CN107644903B (en) * | 2017-09-14 | 2020-03-17 | 全球能源互联网研究院 | Trench gate IGBT device with high short-circuit resistance and preparation method thereof |
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170531 |
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| WW01 | Invention patent application withdrawn after publication |