CN106783977A - Domain structure for taking into account IGBT short-circuit capacities and switching speed - Google Patents
Domain structure for taking into account IGBT short-circuit capacities and switching speed Download PDFInfo
- Publication number
- CN106783977A CN106783977A CN201710007181.4A CN201710007181A CN106783977A CN 106783977 A CN106783977 A CN 106783977A CN 201710007181 A CN201710007181 A CN 201710007181A CN 106783977 A CN106783977 A CN 106783977A
- Authority
- CN
- China
- Prior art keywords
- grid
- groove
- runway
- grid groove
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
Abstract
The present invention relates to a kind of domain structure for taking into account IGBT short-circuit capacities and switching speed, it includes chip layout base plate, grid runway, first grid groove, second grid groove and grid；Grid runway is deposited with the upper surface of chip layout base plate, grid runway is connected with grid, some first grid grooves are offered in the upper surface of chip layout base plate, the upper surface of the chip layout base plate between each two first grid groove offers second grid groove, and first grid groove is in the setting that is connected with grid runway, second grid groove is set in floating, and first grid groove is respectively positioned on inside grid runway with second grid groove.The present invention can effectively reduce the input capacitance and miller capacitance caused by middle groove, so as to improve devices switch speed, reduce switching loss, and increase device can be used frequency range, simultaneously because effective coverage is constant, the saturation voltage drop of device is simultaneously unaffected.
Description
Technical field
The present invention relates to a kind of domain structure, present invention relates especially to one kind for taking into account IGBT short-circuit capacities with switch
The domain structure of speed.
Background technology
Prior art can increase dummy regions to improve shorted devices ability（Without electron channel region）, it is wide
Dummy areas may cause that warpage occurs during chip manufacture, in order to avoid warpage, can add groove in dummy areas, groove
Increase can cause the increase of input capacitance, and then influence switching speed.By the present invention in that the groove in dummy areas does not connect grid race
Road, so as to realize the reduction of input capacitance and miller capacitance, and then improves switching speed, and increase device can be used frequency range.
Existing structure can increase dummy regions to improve short-circuit capacity, and wide dummy areas may cause chip manufacture
During there is warpage, in order to avoid warpage, groove can be added in dummy areas, the increase of groove can cause the increasing of input capacitance
Greatly, switching speed is influenceed.
For in the domain structure of prior art, three gate trench connect grid runway, positioned at middle gate trench
Main Function be improve grooved surface in distributing homogeneity, so as to effectively prevent that warpage occurs during chip manufacture.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided one kind can be reduced effectively by middle groove
The input capacitance that causes and miller capacitance, improve devices switch speed, reduce switching loss for taking into account IGBT short-circuit capacities
With the domain structure of switching speed.
According to the technical scheme that the present invention is provided, the domain knot for taking into account IGBT short-circuit capacities and switching speed
Structure, it includes chip layout base plate, grid runway, first grid groove, second grid groove and grid；In the upper of chip layout base plate
Surface deposition has grid runway, and grid runway is connected with grid, and some first grids are offered in the upper surface of chip layout base plate
Pole groove, the upper surface of the chip layout base plate between each two first grid groove offers second grid groove, and first grid
With grid runway in the setting that is connected, second grid groove is set groove in floating, and first grid groove is respectively positioned on second grid groove
Inside grid runway.
The first grid groove is equal with the width of second grid groove, and first grid groove length direction and second grid
The length direction of groove is set in parallel, and second grid groove is equal with the distance between two first grid grooves, first grid groove
Length direction is vertical setting with the length direction of grid runway.
The present invention can effectively reduce the input capacitance and miller capacitance caused by dummy region trenches, so as to improve device
Part switching speed, reduces switching loss, and increase device can be used frequency range.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Specific embodiment
With reference to specific embodiment, the invention will be further described.
This is used to take into account the domain structure of IGBT short-circuit capacities and switching speed, and it runs including chip layout base plate 1, grid
Road 2, first grid groove 3, second grid groove 4 and grid 5；Grid runway 2, grid are deposited with the upper surface of chip layout base plate 1
Pole runway 2 is connected with grid 5（I.e. grid runway 2 is ultimately connected to grid 5）, offered in the upper surface of chip layout base plate 1
Some first grid grooves 3, the upper surface of the chip layout base plate 1 between each two first grid groove 3 offers second grid
Groove 4, and first grid groove 3 is in the setting that is connected with grid runway 2, second grid groove 4 is set in floating, and first grid groove 3
It is respectively positioned on inside grid runway 2 with second grid groove 4.
The first grid groove 3 is equal with the width of second grid groove 4, and the length direction of first grid groove 3 and second
The length direction of grid groove 4 is set in parallel, equal, the first grid of the distance between second grid groove 4 and two first grid grooves 3
The length direction of pole groove 3 is vertical setting with the length direction of grid runway 2.
The material of the grid runway 2 is polysilicon.
Second grid groove 4 and its both sides half domain form two points of dummy areas, first grid groove 3 and its both sides
One of region form effective conduction region.
In the present invention, second grid groove 4 is located between two first grid grooves 3, and second grid groove 4 does not connect grid runway 2,
The input capacitance and miller capacitance caused by second grid groove 4 can be effectively reduced, so as to improve devices switch speed, reduction is opened
Loss is closed, increase device can be used frequency range, simultaneously because effective coverage is constant, the saturation voltage drop of device is simultaneously unaffected.
Claims (2)
1. a kind of domain structure for taking into account IGBT short-circuit capacities and switching speed, it is characterized in that：It includes chip layout bottom
Plate（1）, grid runway（2）, first grid groove（3）, second grid groove（4）With grid（5）；In chip layout base plate（1）It is upper
Surface deposition has grid runway（2）, grid runway（2）With grid（5）It is connected, in chip layout base plate（1）Upper surface open up
There are some first grid grooves（3）, in each two first grid groove（3）Between chip layout base plate（1）Upper surface offer
Second grid groove（4）, and first grid groove（3）With grid runway（2）In connected setting, second grid groove（4）Set in floating
Put, and first grid groove（3）With second grid groove（4）It is respectively positioned on grid runway（2）It is internal.
2. it is used to take into account the domain structure of IGBT short-circuit capacities and switching speed as claimed in claim 1, it is characterized in that：It is described
First grid groove（3）With second grid groove（4）Width it is equal, and first grid groove（3）Length direction and second grid groove
（4）Length direction be set in parallel, second grid groove（4）With two first grid grooves（3）The distance between equal, the first grid
Pole groove（3）Length direction and grid runway（2）Length direction be vertical setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007181.4A CN106783977A (en) | 2017-01-05 | 2017-01-05 | Domain structure for taking into account IGBT short-circuit capacities and switching speed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007181.4A CN106783977A (en) | 2017-01-05 | 2017-01-05 | Domain structure for taking into account IGBT short-circuit capacities and switching speed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783977A true CN106783977A (en) | 2017-05-31 |
Family
ID=58949665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007181.4A Pending CN106783977A (en) | 2017-01-05 | 2017-01-05 | Domain structure for taking into account IGBT short-circuit capacities and switching speed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783977A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671626A (en) * | 2018-12-12 | 2019-04-23 | 吉林华微电子股份有限公司 | IGBT device and production method with negative-feedback capacitor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202977425U (en) * | 2012-12-18 | 2013-06-05 | 中国科学院微电子研究所 | Layout suitable for dummy-trench power device |
| JP2016034037A (en) * | 2011-05-16 | 2016-03-10 | ルネサスエレクトロニクス株式会社 | Ie-type trench gate igbt |
| CN105762147A (en) * | 2016-04-14 | 2016-07-13 | 株洲中车时代电气股份有限公司 | Semiconductor power device layout |
| CN206388707U (en) * | 2017-01-05 | 2017-08-08 | 江苏中科君芯科技有限公司 | Domain structure for taking into account IGBT short-circuit capacities and switching speed |
-
2017
- 2017-01-05 CN CN201710007181.4A patent/CN106783977A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016034037A (en) * | 2011-05-16 | 2016-03-10 | ルネサスエレクトロニクス株式会社 | Ie-type trench gate igbt |
| CN202977425U (en) * | 2012-12-18 | 2013-06-05 | 中国科学院微电子研究所 | Layout suitable for dummy-trench power device |
| CN105762147A (en) * | 2016-04-14 | 2016-07-13 | 株洲中车时代电气股份有限公司 | Semiconductor power device layout |
| CN206388707U (en) * | 2017-01-05 | 2017-08-08 | 江苏中科君芯科技有限公司 | Domain structure for taking into account IGBT short-circuit capacities and switching speed |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671626A (en) * | 2018-12-12 | 2019-04-23 | 吉林华微电子股份有限公司 | IGBT device and production method with negative-feedback capacitor |
| CN109671626B (en) * | 2018-12-12 | 2021-09-28 | 吉林华微电子股份有限公司 | IGBT device with negative feedback capacitor and manufacturing method |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |