CN106783759B - A kind of high-power IGBT device - Google Patents
A kind of high-power IGBT device Download PDFInfo
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- CN106783759B CN106783759B CN201611030415.9A CN201611030415A CN106783759B CN 106783759 B CN106783759 B CN 106783759B CN 201611030415 A CN201611030415 A CN 201611030415A CN 106783759 B CN106783759 B CN 106783759B
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- slide glass
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- Microelectronics & Electronic Packaging (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
The present invention provides a kind of high-power IGBT devices, with injection-moulded housing, slide glass, multiple high-power chips and thermal grease, wherein, there is a chip to accommodate cavity, the rectangular body cavity that the chip accommodating cavity is surrounded by a bottom wall and four side walls in the injection-moulded housing；The slide glass is fixedly installed on the bottom surface of the chip accommodating cavity, and is partially submerged into four side walls；The multiple high-power chip is fixed on the slide glass；The heat dissipating silicone grease fills up the chip accommodating cavity, and coplanar with the top surface of injection-moulded housing；It is stretched out after 90 degree of multiple pin bendings of the multiple high-power chip from the top surface of the injection-moulded housing；There are multiple heat dissipation channels, circulation has heat radiation working medium, the heat radiation working medium of each the multiple heat dissipation channel and the following table face contact of the slide glass in the heat dissipation channel on the bottom wall of the injection-moulded housing.
Description
Technical field
The present invention relates to high power device fields, and in particular to a kind of high-power IGBT device with cooling system.
Background technique
It is known that the design of power factor correction power modular structure there is a problem of it is more serious, mainly exist
It is directly loaded on radiating bottom plate in by the circuit being assembled by discrete component, structure so, heat dissipation effect is general, and first device
Part is easily influenced by external condition, such as Electromagnetic Interference, steam, corrosion of dust etc., is existed simultaneously disassembly inconvenience, is led to
The disadvantages of poor with property.
Summary of the invention
Based on solving the problems in above-mentioned encapsulation, the present invention provides a kind of high-power IGBT device, have injection-moulded housing,
Slide glass, multiple high-power chips and thermal grease, the slide glass are ceramic slide glass or metal slide glass, wherein
There is a chip to accommodate cavity, the chip accommodating cavity is by a bottom wall and four side walls in the injection-moulded housing
The rectangular body cavity surrounded；
The slide glass is fixedly installed on the bottom surface of the chip accommodating cavity, and is partially submerged into four side walls；
The multiple high-power chip is fixed on the slide glass；
The thermal grease fills up the chip accommodating cavity, and coplanar with the top surface of injection-moulded housing；The multiple big function
It is stretched out after 90 degree of multiple pin bendings of rate chip from the top surface of the injection-moulded housing；
There are multiple lateral heat dissipation channels, circulation has heat dissipation in the heat dissipation channel on the bottom wall of the injection-moulded housing
Working medium, the heat radiation working medium of each the multiple heat dissipation channel and the following table face contact of the slide glass.
According to an embodiment of the invention, further including the control circuit board being electrically connected with the multiple pin.
According to an embodiment of the invention, the control circuit board has multiple welding holes corresponding with the multiple pin.
According to an embodiment of the invention, having equally distributed metallic particles in the thermal grease.
According to an embodiment of the invention, the multiple high-power chip is fixed on the slide glass by heat-conducting silicone grease.
According to an embodiment of the invention, the shape of the slide glass is the cuboid surrounded by a bottom wall and four side walls
Chamber, the height of four side walls of the slide glass are greater than or equal to the maximum height of the multiple high-power chip.
According to an embodiment of the invention, the height of four side walls of the injection-moulded housing is greater than four side walls of the slide glass
Height.
According to an embodiment of the invention, there are multiple the multiple heat dissipations of connection in the outside of four side walls of the slide glass
The vertical channel in channel, the multiple vertical channel is vertical with the multiple heat dissipation channel, and the multiple vertical channel is logical
Annular channel is crossed to communicate with each other.
Technical solution of the present invention has the advantages that
(1) the globality heat dissipation that fluid working substance is carried out using heat dissipation channel, improves radiating efficiency；
(2) leakproofness is guaranteed by using the injection-moulded housing of globality, prevents from corroding；
(3) use of metal slide glass can a degree of shielding outside electromagnetic interference；
(4) metallic particles is distributed in thermal grease, it is ensured that the rapid cooling on chip top.
Detailed description of the invention
Fig. 1 is the sectional view of the high-power IGBT device of first embodiment of the invention；
Fig. 2 is the left view of the high-power IGBT device of first embodiment of the invention；
Fig. 3 is the schematic diagram of high-power chip of the invention；
Fig. 4 is the top view of control circuit board of the invention；
Fig. 5 is the sectional view of the high-power IGBT device of second embodiment；
Fig. 6 is the sectional view of the high-power IGBT device of 3rd embodiment.
Specific embodiment
First embodiment
Referring to Fig. 1 and 2, a kind of high-power IGBT device has injection-moulded housing 1, ceramic slide glass 5, multiple high-power chips 4
With thermal grease 2, wherein there is a chip to accommodate cavity, the chip accommodating cavity is by a bottom wall in the injection-moulded housing 1
The rectangular body cavity surrounded with four side walls；The ceramics slide glass 5 is fixedly installed on the bottom surface of the chip accommodating cavity, and portion
Divide in insertion four side walls, can prevent heat radiation working medium from entering in the chip accommodating cavity body in this way, causes the danger such as corrosion
Evil；The multiple high-power chip 4 is fixed on the ceramic slide glass 5 by heat-conducting silicone grease；The thermal grease 2 fills up described
Chip accommodates cavity, and coplanar with the top surface of injection-moulded housing；After 90 degree of 3 bending of multiple pins of the multiple high-power chip 4
It is stretched out from the top surface of the injection-moulded housing 1；There is multiple heat dissipation channels 6, the heat dissipation on the bottom wall of the injection-moulded housing 1
Circulating in channel 6 has heat radiation working medium, under the heat radiation working medium of each the multiple heat dissipation channel 6 and the ceramic slide glass 5
Surface contact.
Referring to Fig. 3, the multiple high-power chip 4 may include multiple chips of different sizes comprising and IGBT is more
A pin 3 is all packaged after 90 degree of bending.
It referring to fig. 4, further include the control circuit board 7 being electrically connected with the multiple pin 3, the control circuit board 7 has
Multiple welding holes 8 corresponding with the multiple pin 3,3 extension of pin are inserted into the welding hole 8 and are welded, with
It realizes being electrically connected for multiple high-power chips and control circuit board 7, multiple other function moulds is additionally provided in the control circuit board 7
Block, such as control chip 9 and power module 10.
According to the first embodiment, there is equally distributed metallic particles in the thermal grease 2.
Second embodiment
Referring to Fig. 5, a kind of high-power IGBT device has injection-moulded housing 1, ceramic slide glass 5,4 and of multiple high-power chips
Thermal grease 2, wherein there is a chip to accommodate cavity in the injection-moulded housing 1, chip accommodating cavity by a bottom wall and
The rectangular body cavity that four side walls surround；The ceramics slide glass 5 is fixedly installed on the bottom surface of the chip accommodating cavity, and part
It is embedded in four side walls, can prevent heat radiation working medium from entering in the chip accommodating cavity body in this way, cause the harm such as corrosion；
The multiple high-power chip 4 is fixed on the ceramic slide glass 5 by heat-conducting silicone grease；The thermal grease 2 fills up the core
Piece accommodates cavity, and coplanar with the top surface of injection-moulded housing；After 90 degree of 3 bending of multiple pins of the multiple high-power chip 4 from
The top surface of the injection-moulded housing 1 is stretched out；There are multiple heat dissipation channels 6, the heat dissipation is logical on the bottom wall of the injection-moulded housing 1
Circulation has heat radiation working medium, the following table of the heat radiation working medium of each the multiple heat dissipation channel 6 and the ceramic slide glass 5 in road 6
Face contact.
Referring to Fig. 5, different from the first embodiment the ceramics slide glass 5 can also be metal slide glass, shape is served as reasons
The rectangular body cavity that one bottom wall and four side walls surround, the height H2 of four side walls of the slide glass are greater than or equal to the multiple
The maximum height H1 of high-power chip can make the metal slide glass play the role of electromagnetic shielding in this way.The injection moulded shell
The height H3 of four side walls of body is greater than the height H2 of four side walls of the slide glass, prevents outflow and the infiltration of heat radiation working medium in this way
Out.
3rd embodiment
Structure is similar with second embodiment, different, has in the outside of four side walls of the slide glass 5 multiple
It is connected to the vertical channel 11 of the multiple heat dissipation channel 6, the multiple vertical channel 11 is vertical with the multiple heat dissipation channel 6,
And the multiple vertical channel 11 is communicated with each other by annular channel (not shown).
Finally, it should be noted that obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Other various forms of variations or variation out.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (8)
1. a kind of high-power IGBT device has injection-moulded housing, slide glass, multiple high-power chips and thermal grease, the slide glass
For ceramic slide glass or metal slide glass, wherein
There is a chip to accommodate cavity, the chip accommodating cavity is surrounded by a bottom wall and four side walls in the injection-moulded housing
Rectangular body cavity；
The slide glass is fixedly installed on the bottom surface of the chip accommodating cavity, and is partially submerged into four side walls；
The multiple high-power chip is fixed on the slide glass；
The thermal grease fills up the chip accommodating cavity, and coplanar with the top surface of injection-moulded housing；The multiple high-power core
It is stretched out after 90 degree of multiple pin bendings of piece from the top surface of the injection-moulded housing；
There are multiple lateral heat dissipation channels, circulation has heat dissipation work in the heat dissipation channel on the bottom wall of the injection-moulded housing
Matter, the heat radiation working medium of each the multiple heat dissipation channel and the following table face contact of the slide glass.
2. high-power IGBT device according to claim 1, which is characterized in that further include being electrically connected with the multiple pin
Control circuit board.
3. high-power IGBT device according to claim 2, which is characterized in that the control circuit board has multiple and institute
State the corresponding welding hole of multiple pins.
4. high-power IGBT device according to claim 1, which is characterized in that have in the thermal grease and be uniformly distributed
Metallic particles.
5. high-power IGBT device according to claim 1, which is characterized in that the multiple high-power chip passes through thermally conductive
Silicone grease is fixed on the slide glass.
6. high-power IGBT device according to claim 1, which is characterized in that the shape of the slide glass is by a bottom wall
The height of the rectangular body cavity surrounded with four side walls, four side walls of the slide glass is greater than or equal to the multiple high-power chip
Maximum height.
7. high-power IGBT device according to claim 6, which is characterized in that the height of four side walls of the injection-moulded housing
Degree is greater than the height of four side walls of the slide glass.
8. high-power IGBT device according to claim 7, which is characterized in that in the outside of four side walls of the slide glass
Vertical channel with multiple the multiple heat dissipation channels of connection, the multiple vertical channel and the multiple heat dissipation channel hang down
Directly, and the multiple vertical channel is communicated with each other by annular channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611030415.9A CN106783759B (en) | 2016-11-22 | 2016-11-22 | A kind of high-power IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611030415.9A CN106783759B (en) | 2016-11-22 | 2016-11-22 | A kind of high-power IGBT device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783759A CN106783759A (en) | 2017-05-31 |
| CN106783759B true CN106783759B (en) | 2018-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611030415.9A Active CN106783759B (en) | 2016-11-22 | 2016-11-22 | A kind of high-power IGBT device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130228909A1 (en) * | 2012-03-01 | 2013-09-05 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device and method for manufacturing semiconductor device |
| CN104157510A (en) * | 2014-08-06 | 2014-11-19 | 海拉（厦门）汽车电子有限公司 | Low-thermal-resistance low-cost automobile solid-state relay |
| CN205428902U (en) * | 2016-03-09 | 2016-08-03 | 上海道之科技有限公司 | Soaking board radiating basal plate power modular structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1093016A (en) * | 1996-09-19 | 1998-04-10 | Hitachi Ltd | Power semiconductor device |
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2016
- 2016-11-22 CN CN201611030415.9A patent/CN106783759B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130228909A1 (en) * | 2012-03-01 | 2013-09-05 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device and method for manufacturing semiconductor device |
| CN104157510A (en) * | 2014-08-06 | 2014-11-19 | 海拉（厦门）汽车电子有限公司 | Low-thermal-resistance low-cost automobile solid-state relay |
| CN205428902U (en) * | 2016-03-09 | 2016-08-03 | 上海道之科技有限公司 | Soaking board radiating basal plate power modular structure |
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| Publication number | Publication date |
|---|---|
| CN106783759A (en) | 2017-05-31 |
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Effective date of registration: 20181114 Address after: 276800 No. 166 Guilin Road, Rizhao City, Shandong Province Applicant after: RIZHAO LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 226300 window of science and technology, No. 266, New Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu Applicant before: NANTONG WOTE OPTOELECTRONICS TECHNOLOGY CO.,LTD. |
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Denomination of invention: A high-power IGBT device Effective date of registration: 20230831 Granted publication date: 20181228 Pledgee: Rizhao Donggang Rural Commercial Bank Co.,Ltd. Economic Development Zone sub branch Pledgor: RIZHAO LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2023980054832 |
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