CN106783624A - Transistor threshold voltage adjusting method and phase inverter preparation method - Google Patents
Transistor threshold voltage adjusting method and phase inverter preparation method Download PDFInfo
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- CN106783624A CN106783624A CN201611267953.XA CN201611267953A CN106783624A CN 106783624 A CN106783624 A CN 106783624A CN 201611267953 A CN201611267953 A CN 201611267953A CN 106783624 A CN106783624 A CN 106783624A
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- 150000002500 ions Chemical class 0.000 claims description 32
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
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- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention provides a kind of preparation method of metal oxide thin-film transistor phase inverter and the threshold voltage adjustment method of metal oxide thin-film transistor.The preparation method of phase inverter includes：One substrate is provided；Two drain source areas of metal oxide thin-film transistor of composition phase inverter are formed on substrate；Two active layers of metal oxide thin-film transistor are formed on the substrate for forming drain source area；Insulating barrier is formed in drain source area and active layer；On the insulating layer grid is formed on the position corresponding with active layer；Deposit masking layer on the substrate for forming grid, it is etched after expose region corresponding to the active layer of one of metal oxide thin-film transistor；Gas ion injection is carried out to the region corresponding to the active layer of the one of metal oxide thin-film transistor for exposing；Removal masking layer.
Description
Technical field
The present invention relates to technical field of semiconductors, and more particularly to a kind of crystal based on metal oxide thin-film transistor
Pipe threshold voltage adjusting method and phase inverter preparation method.
Background technology
Existing transistor inverter can be divided into saturation type phase inverter (E/E phase inverters) and depletion type according to load difference
Phase inverter (E/D phase inverters).Fig. 1 show saturation type phase inverter, wherein MLPipe is the load pipe being made up of enhanced metal-oxide-semiconductor, MI
Pipe is the driving tube being made up of enhanced metal-oxide-semiconductor.As shown in Fig. 2 curve m1 is output characteristic curve, m2 is bent input characteristics
Line.When Vi is VOLWhen (low level), MIPipe ends, MLPipe unsaturation, Vo=VDD-VTHL, output voltage is in the presence of loss, and output is special
Linearity curve is gentle.Fig. 3 show depletion type phase inverter (E/D phase inverters), MDPipe is the load pipe being made up of depletion type MOS tube, ME
Pipe is the driving tube being made up of enhanced metal-oxide-semiconductor.Fig. 2 show the input-output curve of depletion type phase inverter, and wherein m3 is defeated
Go out characteristic curve, m4 is input characteristic curve.When Vi is VOLWhen (low level), MDPipe ends, MEPipe unsaturation, Vo=VDD, i.e.,
Compared to saturation type MOS phase inverters, depletion type inverter output voltage does not lose, and output characteristic curve is precipitous, output voltage pendulum
Width is big, with obvious mutability.However, comparing saturation type phase inverter, there is manufacturing process complexity, manufacture in depletion type phase inverter
The problem of high cost.
With continuing to develop for metal oxide thin-film transistor, compared to traditional non-crystalline silicon and polysilicon transistors phase
Than it has：(can as little as room temperature) growing film at low temperature, and very smooth surface is obtained, flexible, glass can be made in
Above substrate, the cost of material is low, the advantages of electric property is good.Existing metal oxide thin-film transistor works as grid leak short circuit shape
During into E/D inverter structures, because metal oxide thin-film transistor can be constantly in off state so that direction device without
Method normal work.Therefore the threshold voltage of regulation metal oxide thin-film transistor is needed, can be entered in grid leak short circuit
Saturation region.
Although up to the present thering are many methods to can be used to the threshold voltage and mode of operation of thin film transistor (TFT), such as
Oxygen pressure regulation and control when chemical doping, raceway groove are deposited, using double-deck raceway groove and using different metal gate electrodes etc., but these
The preparation technology of technology is sufficiently complex, and cost is of a relatively high,
The content of the invention
The present invention is in order to overcome the deficiencies in the prior art, there is provided a kind of metal oxide thin-film transistor threshold voltage adjustments
The preparation method of method and metal oxide thin-film transistor phase inverter.
To achieve these goals, the present invention provides a kind of preparation method of metal oxide thin-film transistor phase inverter,
Including：
One substrate is provided；
Two drain source areas of metal oxide thin-film transistor of composition phase inverter are formed on substrate；
Two active layers of metal oxide thin-film transistor are formed on the substrate for forming drain source area；
Insulating barrier is formed in drain source area and active layer；
On the insulating layer grid is formed on the position corresponding with active layer；
Deposit masking layer on the substrate for forming grid, it is etched after expose one of metal-oxide film crystal
Region corresponding to the active layer of pipe；
Region corresponding to the active layer of the one of metal oxide thin-film transistor for exposing is carried out gas from
Son injection；
Removal masking layer.
In one embodiment of the invention, when carrying out gas ion and injecting, the power of injection more than or equal to 1 watt and less than or
Equal to 100 watts, the time of injection is more than or equal to 1 minute and less than or equal to 60 minutes.
In one embodiment of the invention, the gas ion of injection is nitrogen, hydrogen, oxygen, fluorine gas, silane, an oxidation two
The combination of one or more in nitrogen, ammonia, argon gas, helium and sulfur tetrafluoride.
In one embodiment of the invention, the substrate is flexible substrate.
In one embodiment of the invention, the drain source area is by conductive metal material, conducting metal oxide, graphite, graphite
Any one in alkene, CNT or carbon nanocoils is made.
In one embodiment of the invention, the grid by any one in ITO, Al, Au, Ni, Cu, Cr, Ti, Ag or Zn or
Several alloys, or conducting metal oxide is made.
In one embodiment of the invention, using plasma strengthens chemical vapor deposition to one of metal for exposing
Region corresponding to the active layer of oxide thin film transistor carries out gas ion injection.
Another aspect of the present invention also provides a kind of metal oxide thin-film transistor threshold voltage adjustment method, including：
Deposit masking layer on the metal oxide thin-film transistor for completing is prepared, it is etched after to expose active layer institute right
The region answered；
Gas ion injection is carried out to the region corresponding to the active layer that exposes；
Removal masking layer.
In one embodiment of the invention, when carrying out gas ion and injecting, the power of injection more than or equal to 1 watt and less than or
Equal to 100 watts, the time of injection is more than or equal to 1 minute and less than or equal to 60 minutes.
In one embodiment of the invention, the gas ion of injection is nitrogen, hydrogen, oxygen, fluorine gas, silane, an oxidation two
The combination of one or more in nitrogen, ammonia, argon gas, helium and sulfur tetrafluoride.
In sum, the present invention is provided metal oxide thin-film transistor threshold voltage adjustment method and metal oxide
The preparation method of thin film transistor (TFT) phase inverter compared with prior art, with advantages below：
The gas ion for carrying out high-energy by the region corresponding to the active layer to metal oxide thin-film transistor is noted
Enter, high energy gases ion and the atom in active layer of injection collide, and are ionized the atom in active layer, not only change
Become the crystal phase structure in active layer, while also increase the carrier concentration of active layer, and then substantially increase in active layer
The mobility of carrier, reduces metal oxide thin-film transistor threshold voltage, reaches the purpose of adjustment threshold voltage.This hair
The threshold voltage adjustment method of the metal oxide thin-film transistor of bright offer compared to traditional threshold voltage adjustment method, no
As long as only adjusting the required simple low cost of processing step and power and time by controlling gas ion to inject can reach
The purpose of accurate adjustment threshold voltage.
The regulation of metal oxide thin-film transistor threshold voltage causes in the phase inverter of its composition that load pipe can be in grid source
Just there are enough carriers to form conducting channel to enable that load pipe is operated in saturation region in active layer in the case of short circuit,
So as to ensure that the normal work of phase inverter so that phase inverter can have precipitous Current Voltage output characteristic curve, output electricity
The low and high level amplitude of oscillation of pressure is big, fault-tolerant few, it is not easy to cause logical miss.Further, it is anti-phase compared to traditional saturation type
Device, the phase inverter power consumption being made up of metal oxide thin-film transistor that the present invention is provided can reduce an order of magnitude.
It is that above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly,
And coordinate accompanying drawing, it is described in detail below.
Brief description of the drawings
Fig. 1 show the circuit theory diagrams of saturation type phase inverter.
Fig. 2 show the Current Voltage output characteristic curve of the saturation type phase inverter shown in Fig. 1.
Fig. 3 show the circuit theory diagrams of depletion type phase inverter.
Fig. 4 show the Current Voltage output characteristic curve of the depletion type phase inverter shown in Fig. 1.
Fig. 5 a to Fig. 5 g show the preparation of the metal oxide thin-film transistor phase inverter of one embodiment of the invention offer
Method.
Fig. 6 show the metal oxide thin-film transistor threshold voltage adjustment method of one embodiment of the invention offer.
Specific embodiment
Compared to traditional saturation type phase inverter, depletion type phase inverter has precipitous Current Voltage output characteristic curve, this
To cause that the output fault-tolerance of depletion type phase inverter is more preferable.However, due to the technique by depletion type MOS tube in depletion type phase inverter
Limitation, compared to saturation type phase inverter, the manufacturing process of depletion type phase inverter is more complicated, is more expensive to manufacture, and person also limit consumption
The application of type phase inverter to the greatest extent.In view of this, the present embodiment provides a kind of being made up of metal oxide thin-film transistor and structure
The phase inverter similar with depletion type phase inverter (shown in Fig. 3).The metal oxide thin-film transistor that the present embodiment is provided is anti-phase
The Current Voltage output characteristic curve of device is identical with the Current Voltage output characteristic curve of the phase inverter of traditional depletion type, such as schemes
Shown in 4.
As shown in Fig. 5 a to 5g, the preparation method of the metal oxide thin-film transistor that the present embodiment is provided includes：
First, there is provided a substrate 1.In the present embodiment, substrate 1 is flexible substrate.Preferably, it is peeling liner bottom.However, this
Invention is not limited in any way to this.In other embodiments, substrate 1 can be other flexible substrates or the non-flexible substrates such as PET.
Secondly, two drain source areas of metal oxide thin-film transistor 2 of composition phase inverter are formed on substrate 1.Specifically
The forming method of drain source area 2 be：Layer of conductive film is deposited on substrate 1, and drain source area 2 is formed after etched or stripping.In
In the present embodiment, conductive film is the aluminium film of low cost.However, the present invention is not limited in any way to this.In other embodiments
In, conductive film can be the conductive metal material such as copper or iron, or conducting metal oxide or be graphite, Graphene, carbon nanometer
Pipe or carbon nanocoils in any one.
Then, two active layers of metal oxide thin-film transistor 3 are formed on the substrate for forming drain source area 2.Specifically
Forming method be：Layer of metal oxide semiconductor thin-film is deposited on the substrate for forming drain source area 2, after etched or stripping
Form active layer 3.
Further, layer of metal sull is deposited in drain source area and active layer, is formed after etched or stripping
Insulating barrier 4.
Further, grid 5 is formed on position corresponding with active layer 3 on the insulating barrier 4.In the present embodiment, grid
Pole 5 is made up of metallic aluminium (Al).However, the present invention is not limited in any way to this.In other embodiments, grid 5 can by ITO,
The alloy of any one or several in Au, Ni, Cu, Cr, Ti, Ag or Zn is made, or is made up of conducting metal oxide.
Said process completes the preparation in the structure of the phase inverter being made up of two metal oxide thin-film transistors,
The threshold voltage to the metal oxide thin-film transistor in phase inverter as load pipe is adjusted below.
Specifically, deposit masking layer 6 on the substrate 1 for forming grid, it is etched after expose the oxidation of one of metal
Region corresponding to the active layer of thing thin film transistor (TFT) (load pipe).In the present embodiment, masking layer is photoresist.However, this
Invention is not limited in any way to this.In other embodiments, can using the combination of silica and photoresist or nitrogen dioxide and
The combination of photoresist is used as masking layer.
Then, to the area corresponding to the active layer of the one of metal oxide thin-film transistor (load pipe) for exposing
Domain carries out gas ion injection, as shown in arrow in Fig. 5 g.In the present embodiment, using plasma enhancing chemical vapor deposition
Method is injected carrying out the gas ion of high-energy, and the gas of injection is nitrogen.However, the present invention is not limited in any way to this.In
In other embodiments, hydrogen, oxygen, fluorine gas, silane, nitrous oxide, ammonia, argon gas, helium and sulfur tetrafluoride can be used
In one or more be combined as inject gas and injection mode or other types.The gas ion injection of high-energy
After active layer 3, the crystalline phase of active layer is not only changed, concurrently injected high energy gas ion can occur with the atom in active layer
Collision so that the atom in active layer is ionized, and so as to improve the concentration of the carrier in active layer, and then has been improve
The mobility of active layer carriers, reaches the purpose for reducing metal oxide thin-film transistor threshold voltage.The metal of the structure
Oxide thin film transistor is similar with the structure of traditional depletion type MOS tube, big in active layer when grid and source short
The carrier of amount forms conducting channel, and the setting causes that load pipe can rapidly enter saturation when it is low level to be input into Vi
Area so that phase inverter with precipitous Current Voltage output characteristic curve.
It is demonstrated experimentally that when injecting power is 5 watts, and injection length is 3 minutes, the threshold voltage and high energy of load pipe
Compared before the injection of gas example and reduce 0.2 volt.When injecting power is 10 watts, and injection length is 7 minutes, load pipe
Threshold voltage reduces 1.2 volts compared with before the injection of high energy gas example；When injecting power is 25 watts, injection length is 10 minutes
When, the threshold voltage of load pipe reduces 2.7 volts compared with before the injection of high energy gas example.It is preferred, therefore, that being arranged on
When carrying out gas ion injection, more than or equal to 1 watt and less than or equal to 100 watts, the time of injection is more than or waits the power of injection
In 1 minute and less than or equal to 60 minutes.However, the present invention is not limited in any way to the condition injected.In other embodiments,
The size of the threshold voltage that can be adjusted as needed controls power and the time of high energy gas ion implanting.
Finally, masking layer 6 is removed, structure as depicted in fig. 5e is formed, the preparation of whole phase inverter is completed.
In the phase inverter that the metallized metal oxide thin film transistor that the present embodiment is provided is constituted, by load pipe threshold
The adjustment of threshold voltage is come the normal work for realizing phase inverter and the output that enables phase inverter with excellent characteristics curve.So
And, the present invention does not limit this kind of threshold voltage adjustment method and is only used in phase inverter.Therefore, the present embodiment additionally provides one kind
Metal oxide thin-film transistor threshold voltage adjustment method.The adjusting method includes：
Step S1, masking layer is deposited on the metal oxide thin-film transistor for completing is prepared, it is etched after expose and have
Region corresponding to active layer.In the present embodiment, masking layer is photoresist.However, the present invention is not limited in any way to this.Yu Qi
In its embodiment, masking layer can be used as using silica and the combination of photoresist or the combination of nitrogen dioxide and photoresist.
Step S2, gas ion injection is carried out to the region corresponding to the active layer that exposes.In the present embodiment, use
Plasma enhanced chemical vapor deposition method is injected carrying out the gas ion of high-energy, and the gas of injection is nitrogen.However, this
Invention is not limited in any way to this.In other embodiments, hydrogen, oxygen, fluorine gas, silane, nitrous oxide, ammonia can be used
In gas, argon gas, helium and sulfur tetrafluoride one or more be combined as inject gas and injection mode or other
Type.After the gas ion injection active layer 3 of high-energy, the crystalline phase of active layer, concurrently injected high energy gas are not only changed
Ion can be collided with the atom in active layer so that the atom in active layer is ionized, so as to improve in active layer
Carrier concentration, and then improve the mobility of active layer carriers, reach reduction metal oxide thin-film transistor
The purpose of threshold voltage.The metal oxide thin-film transistor of the structure is similar with the structure of traditional depletion type MOS tube, when
When grid and source short, substantial amounts of carrier forms conducting channel in active layer, and the setting is caused when input Vi is low electricity
Usually, load pipe can rapidly enter saturation region so that phase inverter with precipitous Current Voltage output characteristic curve.
It is demonstrated experimentally that when injecting power is 5 watts, and injection length is 3 minutes, the threshold voltage and high energy of load pipe
Compared before the injection of gas example and reduce 0.2 volt.When injecting power is 10 watts, and injection length is 7 minutes, load pipe
Threshold voltage reduces 1.2 volts compared with before the injection of high energy gas example；When injecting power is 25 watts, injection length is 10 minutes
When, the threshold voltage of load pipe reduces 2.7 volts compared with before the injection of high energy gas example.It is preferred, therefore, that being arranged on
When carrying out gas ion injection, more than or equal to 1 watt and less than or equal to 100 watts, the time of injection is more than or waits the power of injection
In 1 minute and less than or equal to 60 minutes.However, the present invention is not limited in any way to the condition injected.In other embodiments,
The size of the threshold voltage that can be adjusted as needed controls power and the time of high energy gas ion implanting.
Step S3, removes masking layer.
In sum, the present invention is provided metal oxide thin-film transistor threshold voltage adjustment method and metal oxide
The preparation method of thin film transistor (TFT) phase inverter compared with prior art, with advantages below：
The gas ion for carrying out high-energy by the region corresponding to the active layer to metal oxide thin-film transistor is noted
Enter, high energy gases ion and the atom in active layer of injection collide, and are ionized the atom in active layer, not only change
Become the crystal phase structure in active layer, while also increase the carrier concentration of active layer, and then substantially increase in active layer
The mobility of carrier, reduces metal oxide thin-film transistor threshold voltage, reaches the purpose of adjustment threshold voltage.This hair
The threshold voltage adjustment method of the metal oxide thin-film transistor of bright offer compared to traditional threshold voltage adjustment method, no
As long as only adjusting the required simple low cost of processing step and power and time by controlling gas ion to inject can reach
The purpose of accurate adjustment threshold voltage.
The regulation of metal oxide thin-film transistor threshold voltage causes in the phase inverter of its composition that load pipe can be in grid source
Just there are enough carriers to form conducting channel to enable that load pipe is operated in saturation region in active layer in the case of short circuit,
So as to ensure that the normal work of phase inverter so that phase inverter can have precipitous Current Voltage output characteristic curve, output electricity
The low and high level amplitude of oscillation of pressure is big, fault-tolerant few, it is not easy to cause logical miss.Further, it is anti-phase compared to traditional saturation type
Device, the phase inverter power consumption being made up of metal oxide thin-film transistor that the present invention is provided can reduce an order of magnitude.
Although the present invention is disclosed above by preferred embodiment, but the present invention is not limited to, it is any to know this skill
Skill person, without departing from the spirit and scope of the present invention, can make a little change and retouching, therefore protection scope of the present invention is worked as
It is defined depending on claims scope required for protection.
Claims (10)
1. a kind of preparation method of metal oxide thin-film transistor phase inverter, it is characterised in that including：
One substrate is provided；
Two drain source areas of metal oxide thin-film transistor of composition phase inverter are formed on substrate；
Two active layers of metal oxide thin-film transistor are formed on the substrate for forming drain source area；
Insulating barrier is formed in drain source area and active layer；
On the insulating layer grid is formed on the position corresponding with active layer；
Deposit masking layer on the substrate for forming grid, it is etched after expose one of metal oxide thin-film transistor
Region corresponding to active layer；
Gas ion note is carried out to the region corresponding to the active layer of the one of metal oxide thin-film transistor for exposing
Enter；
Removal masking layer.
2. the preparation method of metal oxide thin-film transistor phase inverter according to claim 1, it is characterised in that when entering
During promoting the circulation of qi body ion implanting, more than or equal to 1 watt and less than or equal to 100 watts, the time of injection is more than or equal to 1 to the power of injection
Minute and less than or equal to 60 minutes.
3. the preparation method of metal oxide thin-film transistor phase inverter according to claim 1, it is characterised in that injection
Gas ion in nitrogen, hydrogen, oxygen, fluorine gas, silane, nitrous oxide, ammonia, argon gas, helium and sulfur tetrafluoride
The combination of one or more.
4. the preparation method of metal oxide thin-film transistor phase inverter according to claim 1, it is characterised in that described
Substrate is flexible substrate.
5. the preparation method of metal oxide thin-film transistor phase inverter according to claim 1, it is characterised in that described
Drain source area is by any one in conductive metal material, conducting metal oxide, graphite, Graphene, CNT or carbon nanocoils
It is made.
6. the preparation method of metal oxide thin-film transistor phase inverter according to claim 1, it is characterised in that described
Grid by any one or several in ITO, Al, Au, Ni, Cu, Cr, Ti, Ag or Zn alloy, or conducting metal oxide system
Into.
7. it is according to claim 1 category oxide thin film transistor phase inverter preparation method, it is characterised in that using etc.
Gas ions strengthen chemical vapor deposition to corresponding to the active layer of the one of metal oxide thin-film transistor for exposing
Region carries out gas ion injection.
8. a kind of metal oxide thin-film transistor threshold voltage adjustment method, it is characterised in that including：
Deposit masking layer on the metal oxide thin-film transistor for completing is prepared, it is etched after expose corresponding to active layer
Region；
Gas ion injection is carried out to the region corresponding to the active layer that exposes；
Removal masking layer.
9. metal oxide thin-film transistor threshold voltage adjustment method according to claim 8, it is characterised in that it is special
Levy and be, when gas ion injection is carried out, the power of injection is more than or equal to 1 watt and less than or equal to 100 watts, the time of injection
More than or equal to 1 minute and less than or equal to 60 minutes.
10. metal oxide thin-film transistor threshold voltage adjustment method according to claim 8, it is characterised in that note
The gas ion for entering is nitrogen, hydrogen, oxygen, fluorine gas, silane, nitrous oxide, ammonia, argon gas, helium and sulfur tetrafluoride
In the combination of one or more.
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